JP3509642B2 - Semiconductor device mounting method and mounting structure - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device mounting method for electrically and mechanically connecting a semiconductor device and a circuit plate.
And it relates to mounting structures, semi-conductor arrangement fruit especially to connect the semiconductor device and the circuit board in a face-down
The present invention relates to a mounting method and a mounting structure.

[0002]

2. Description of the Related Art In recent years, flip chip mounting, in which a semiconductor device and a circuit board are directly connected face down, has an advantage that it can be made much smaller and thinner than a conventional package formed by protection molding with resin or the like. It is a technology that is indispensable for achieving high speed, high functionality, and high frequency, and is attracting attention.

A conventional method of mounting a semiconductor device will be described below. FIG. 17 is a sectional view showing a state in which an anisotropic conductive film is attached to a substrate by a conventional method, and FIG. 18 is a main part of a joined state when an anisotropic conductive film of a semiconductor device and a circuit board is used by the conventional method. FIG. 19 is a cross-sectional view of a main part after the semiconductor device is removed by the conventional method, and FIG. 20 is a junction when the semiconductor device is mounted again on the circuit board by using the anisotropic conductive film in the conventional method. It is a fragmentary sectional view of the state.

In FIG. 17, 1 is a circuit board, 2 is an input / output electrode, 3 is a semiconductor device, 4 is a protruding electrode, 5 is an insulating adhesive, and 6 is a conductive particle. In FIG. 19, F is the force applied to the semiconductor device when removing the semiconductor device, X is the peeling of the tip of the input / output electrode, Y is the crack of the input / output electrode under the protruding electrode, and in FIG. The contact between the output electrode and the semiconductor device, W is the disconnection of the input / output electrode.

Conventionally, a method of using an anisotropic conductive film is known as a method of electrically and mechanically connecting a semiconductor device having a protruding electrode formed on an electrode to a circuit board. In this method, as shown in FIG. 17, a circuit board having an input / output electrode 2 is an anisotropic conductive film 7 made of conductive particles 6 dispersed in an insulating adhesive 5 to such an extent that the insulating property is not impaired. Paste on top of 1. Here, as the conductive particles 6, Ni particles, Ag particles, particles obtained by coating a resin thin film with a metal thin film and an insulating film are used, and the diameter thereof is about several μm, and about tens of thousands / mm ² are mixed. Has been done.

Then, the semiconductor device 3 is bonded by a bonding device (not shown) or a plating device (not shown).
By forming the protruding electrode 4 on the aluminum electrode, the semiconductor device 3 having the protruding electrode 4 formed thereon as shown in FIG. 18 is positioned and superposed on the circuit board 1, and finally, heating and pressing are simultaneously performed. , The insulating adhesive 5 with the distance between the protruding electrode 4 and the input / output electrode 2 being kept below the diameter of the conductive particles 6.
To cure. By doing so, the protrusion electrode 4 and the input / output electrode 2 are directly contacted with each other by the direct contact between the protrusion electrode 4 and the input / output electrode 2, or by the conductive particles 6 crushed between the two. It will be electrically connected by contact.

The semiconductor device and the circuit board are electrically and mechanically connected by the above method. However, if a problem occurs in the electrical connection between the semiconductor device itself or the projecting electrodes and the input / output electrodes, it is a great waste to discard the reproducible and non-reproducible substrate on which other components are mounted. Therefore, in order to eliminate waste,
There is a need to remove only the defective semiconductor device and newly mount another semiconductor device (hereinafter referred to as repair).

The conventional repair will be described below. The anisotropic conductive film is attached on the circuit board, and the semiconductor device having the protruding electrodes is positioned and superposed on the circuit board. After that, heating and pressurization are simultaneously performed to cure the insulating adhesive. Here, the insulating adhesive is not completely cured, but the electrical connection is obtained, but the insulating adhesive is cured to a certain temperature so that the semiconductor device can be removed from the circuit board by applying a certain force to the semiconductor device. After that, the semiconductor device itself and the electrical connection between the protruding electrode and the input / output electrode are inspected for any defects. If no problem occurs here, heating and pressurization are further performed to completely cure the insulating adhesive.

On the other hand, when a defect occurs, the anisotropic conductive film is heated to a temperature at which the insulating adhesive is softened,
As shown in FIG. 9, a force F is applied to the semiconductor device to remove the semiconductor device from the circuit board. After that, the anisotropic conductive film is attached again on the circuit board, and the semiconductor device on which the protruding electrodes are formed is positioned and superposed on the circuit board. After that, heating and pressurization are simultaneously performed to cure the insulating adhesive.

[0010]

However, in the above-mentioned conventional method, there is a problem in the semiconductor device itself or the electrical connection between the protruding electrode and the input / output electrode, and the semiconductor device 3
When the semiconductor device must be removed, the input / output electrode 2 is covered with the insulating adhesive 5 so that the input / output electrode 2 is removed from the insulating adhesive 5 by the force applied when the semiconductor device is removed. A great force to do so arises. Due to the force, the tip portion of the input / output electrode, which is most likely to be peeled off, is peeled off from the circuit board 1 (X portion) as shown in FIG. 19, and the tip portion of the input / output electrode is peeled off. Then, the input / output electrode itself may be cracked (Y portion). In particular, these things become more prominent as the pitch becomes narrower because the pitch between the electrodes of the semiconductor device becomes smaller and the electrode width becomes smaller, the peel strength of the input / output electrodes of the circuit board becomes weaker accordingly. come.

After the semiconductor device is thus removed, the semiconductor device is heated again to be mounted on the circuit board in a state where the tip of the input / output electrode is peeled off or the input / output electrode is cracked accordingly. When pressure is applied, the exfoliation of the tip portion of the input / output electrode is accelerated and jumps to contact the semiconductor device (Z portion) or the input / output electrode may be disconnected (W portion) as shown in FIG. There is. Further, immediately after remounting the semiconductor device, even if there is no problem in the electrical connection, the reliability of the electrical connection may be lowered when a heat cycle is applied.

The present invention solves the above-mentioned problems, and it is possible to suppress the occurrence of electrical connection failure even if some trouble occurs and the semiconductor device is removed and re-mounted, and a highly reliable semiconductor device is provided. It is intended to provide an implementation method and an implementation structure.

[0013]

SUMMARY OF THE INVENTION The present invention is a mounting method for mounting a semiconductor device having protruding electrodes on a flexible circuit board via an insulative adhesive. Positioning and overlapping, heating and pressing are performed simultaneously, and the tip of the input / output electrode is pushed by the protruding electrode and depressed into the base material of the circuit board, without completely curing the insulating adhesive. If the semiconductor device is hardened to the extent that it can be removed from the circuit board and the electrical connection between the projecting electrodes and the input / output electrodes is inspected for any defects, if no defects have occurred, then Heating was performed to completely cure the insulating adhesive, and when a defect occurred, the semiconductor device was peeled off from the circuit board and removed.

According to the above structure, it is possible to suppress the occurrence of electrical connection failure even if some trouble occurs and the semiconductor device is removed and re-mounted, and a highly reliable semiconductor device mounting structure is provided. be able to.

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 is a mounting method for mounting a semiconductor device having a protruding electrode on a flexible circuit board via an insulating adhesive, and the semiconductor device is a circuit. After positioning and stacking on the board, heating and pressing are performed simultaneously, and the tip of the input / output electrode is pushed by the protruding electrode and depressed into the substrate of the circuit board, the insulating adhesive is completely cured. If there is no defect, the process includes the steps of curing the semiconductor device to the extent that the semiconductor device can be removed from the circuit board, and the step of inspecting the electrical connection between the protruding electrodes and the input / output electrodes for defects. Further, the insulating adhesive was completely cured by further heating, and when a defect occurred, the semiconductor device was peeled off from the circuit board and removed.

With this structure, when the semiconductor device is mounted, the tip portions of the input / output electrodes are depressed in the base material of the circuit board. In this state, if the semiconductor device itself or the electrical connection between the protruding electrode and the input / output electrode is defective and the semiconductor device has to be removed, the tip of the input / output electrode is located inside the substrate of the circuit board. Since it is depressed, the force to peel off the input / output electrode generated at the tip of the input / output electrode can be greatly reduced, and the peeling from the base material of the tip of the input / output electrode and the vicinity of where the protruding electrode was mounted It is possible to prevent cracks in the input / output electrodes. Therefore, even when the semiconductor device is mounted again, reliable and stable electrical connection can be obtained without contacting the semiconductor device due to the jumping up of the tip of the input / output electrode and disconnection of the input / output electrode itself.

According to a second aspect of the present invention, a semiconductor device having a protruding electrode is provided on a circuit board in which the tip of the input / output electrode is located in a recess deeper than the thickness of the input / output electrode via an insulating adhesive. A mounting method for mounting, in which the semiconductor device is positioned and superposed on the circuit board, and the semiconductor device can be removed from the circuit board by heating and pressing at the same time without completely curing the insulating adhesive. Including the step of curing and the step of inspecting the electrical connection between the protruding electrodes and the input / output electrodes for defects.If no defects occur, further heat to complete the insulating adhesive. On the other hand, when a defect occurs, the semiconductor device is peeled off from the circuit board and removed.

[0018]

According to a third aspect of the present invention, the protruding electrode of the semiconductor device is faced to a circuit board having a recess deeper than the thickness of the tip portion of the input / output electrode, and the protruding electrode is provided via an insulating adhesive. > The semiconductor device mounting structure to be mounted on a circuit board,
The tip portion of the input / output electrode is located in a recess lower than the position where the protruding electrode is mounted.

[0020]

(Embodiment 1) FIG. 1 is a sectional view showing an example of an input / output electrode shape in Embodiment 1 of the present invention, FIG.
3 is a cross-sectional view of the anisotropic conductive film according to Embodiment 1 of the present invention attached to a substrate, FIG. 3 is a process diagram of forming a stud bump according to Embodiment 1 of the present invention, and FIG. 4 is an embodiment of the present invention. Sectional view of essential parts in a joined state when an anisotropic conductive film for a semiconductor device and a circuit board in form 1 is used,
5 is a cross-sectional view of an essential part after removing the semiconductor device according to the first embodiment of the present invention, and FIG. 6 is a cross-sectional view of a state where the anisotropic conductive film according to the first embodiment of the present invention is again attached to a substrate, FIG. 7 is a cross-sectional view of essential parts in a joined state when the semiconductor device according to the first embodiment of the present invention is mounted again on the circuit board using the anisotropic conductive film. Embodiment 1 is
The present invention relates to the invention according to claim 1.

In FIG. 1, 1 is a circuit board, 2 is an input / output electrode, 3 is a semiconductor device, 4 is a protruding electrode, D is the diameter of the protruding electrode tip, d is the input / output electrode tip length, and t is the input / output electrode. The thickness, A, is the position where the center of the bump electrode 4 is mounted. In FIG. 2, 5 is an insulating adhesive, 6 is a conductive particle, and 7 is an anisotropic conductive film. In FIG. 3, 8 is a stage, 9 is an aluminum electrode, 10 is a leveling stage, and in FIG. 5, F is a force applied to the semiconductor device when the semiconductor device is removed.

In the first embodiment, first, when the circuit board is formed, the base material of the lower-layer circuit board 1 for forming the input / output electrodes 2 is flexible and can be depressed by the load applied when the semiconductor device 3 is mounted. The material is used, and the input / output electrode 2 is made of a material that does not crack and is deformable by the load applied when the semiconductor device 3 is mounted.

Further, as shown in FIG. 1, the length of the input / output electrode 2 is not less than the thickness t of the input / output electrode 2 on the base material under the input / output electrode due to the load applied when the semiconductor device 3 is mounted. It should be long enough to collapse. Specifically, it is desirable that the input / output electrode tip length d be d = D / 2 with respect to the tip diameter D of the protruding electrode 4.

Next, as shown in FIG. 2, a circuit board 1 having an input / output electrode 2 is provided with an anisotropic conductive film 7 made of conductive particles 6 dispersed in an insulating adhesive 5 to such an extent that the insulating property is not impaired. Paste on top. Here, the conductive particles 6 are Ni
Particles or Ag particles, or particles obtained by coating a resin thin film with a metal thin film and an insulating film are used, and the diameter thereof is about several μm, and about tens of thousands / mm ² are mixed.

On the other hand, in FIG. 3, the semiconductor device 3 is fixed on the stage 8 heated to 150 ° C. to 300 ° C. by vacuum suction, and the protruding electrode 4 (hereinafter referred to as stud) is formed by the same method as the first step of the known wire bonding method. Bumps) are formed on the aluminum electrodes 9 on the semiconductor device 3.

Here, the many stud bumps 4 formed on the aluminum electrodes 9 of the semiconductor device 3 have slightly different heights as they are. In this state, when mechanically connected to the circuit board 1, there are stud bumps 4 that come into contact with the input / output electrodes 2 on the circuit board 1 and stud bumps 4 that do not reach the input / output electrodes 2 on the circuit board 1. Sisters,
The electrical connection cannot be made reliably. Therefore, in order to align the heights of the stud bumps 4 having different heights within a certain allowable range, a leveling stage 10 is used as shown in FIG. 3 to remove all the stud bumps 4 in one semiconductor device 3. Press down at the same time and level all stud bumps 4 in height.

Next, as shown in FIG. 4, the leveled semiconductor device 3 is positioned and superposed on the circuit board 1 to which the previously processed anisotropic conductive film 7 is attached. Finally, heating and pressurizing are performed simultaneously to maintain the distance between the tip of the stud bump 4 and the input / output electrode 2 on the circuit board 1 to be equal to or less than the diameter of the conductive particle 6, and the insulating adhesive. Cure 5.

Here, the insulating adhesive 5 is not completely cured and electrical connection is obtained, but if the insulating adhesive 5 is brought to a certain temperature and a certain force is applied to the semiconductor device 3, the circuit board 1 to the semiconductor device 3 are applied. To the extent that it can be removed. By doing so, the tip portion of the input / output electrode 2 is located at the semiconductor device 3
Due to the load applied when mounting, the bump electrode 4 is pushed toward the base material, and is depressed into the base material by the height of the input / output electrode 2. After that, the semiconductor device 3 itself and the electrical connection between the protruding electrode 4 and the input / output electrode 2 are inspected for defects. If no problem occurs here, the insulating adhesive 5 is further heated and pressed.
Completely cure.

On the other hand, when a failure occurs, as shown in FIG. 5, the anisotropic conductive film 7 is heated to a temperature at which the insulating adhesive 5 is softened, and a force F is applied to the semiconductor device 3 to turn the semiconductor device 3 on. Remove. At this time, a force acts to peel the input / output electrode 2 from the base material by the insulating adhesive 5. However, since the tip end portion of the input / output electrode 2 is depressed in the base material, The working force can be reduced, and the peeling of the input / output electrode 2 does not occur even if the peel strength is weak, and the input / output electrode 2 itself does not crack.

Thereafter, as shown in FIG. 6, the anisotropic conductive film 7 is attached again on the circuit board 1, and the semiconductor device 3 having the protruding electrodes 4 formed thereon is positioned and superposed on the circuit board 1. After that, heating and pressurization are simultaneously performed to cure the insulating adhesive 5. Therefore, even when the semiconductor device 3 is mounted again, there is no contact with the semiconductor device 3 due to the jumping up of the tip of the input / output electrode as shown in FIG. 7, and it is possible to further suppress the occurrence of disconnection of the input / output electrode itself. It is possible to obtain stable and stable electrical connection.

If the tip portion of the input / output electrode is recessed in the circuit board base material by more than the thickness due to the load applied when mounting the semiconductor device 3, the flexibility of the circuit board base material and the input / output electrode 2 Any length can be used. The protruding electrodes formed on the semiconductor device may be the same as the protruding electrodes (plating bumps) formed by a known plating apparatus (not shown) instead of the wire bonding method. Furthermore, in the flip-chip mounting in which the semiconductor device is mounted by using an insulating adhesive between the semiconductor device and the circuit board, not only the electromechanical connection by the anisotropic conductive film, but the semiconductor device is mounted on the circuit board. The same applies to all mounting methods in which heating and pressing are performed when mounting.

(Embodiment 2) FIG. 8 is a drawing 1 of the tip shape forming process of the input / output electrode in the embodiment 2 of the present invention, and FIG. 9 is a tip shape of the input / output electrode in the embodiment 2 of the present invention. Creation Process 2 FIG. 10 and FIG. 10 show the second embodiment of the present invention.
11 is a sectional view of a main part of a joined state when an anisotropic conductive film of a semiconductor device and a circuit board according to the second embodiment of the present invention is used. FIG. FIG. 7 is a main-portion cross-sectional view after the semiconductor device is removed in the second embodiment of the present invention. Embodiment 2 is
The present invention relates to the invention described in claim 2.

In FIG. 8, 1 is a circuit board, and 11 is a recess deeper than the thickness of the input / output electrodes.
Reference numeral 2 denotes a plating formed on the circuit board 1. 10, 2 is an input / output electrode, 3 is a semiconductor device, 4 is a protruding electrode, 5 is an insulating adhesive, 6 is a conductive particle, and F is a semiconductor device 3 in FIG. Force applied to the semiconductor device 3.

In the second embodiment, first, as shown in FIG. 8, a recess 11 which is deeper than the thickness of the input / output electrode 2 is formed at the tip of the input / output electrode when a via connecting the inner layer and the surface layer is formed.
To provide. Next, as shown in FIG. 9, plating 12 for the input / output electrodes 2 on the surface layer and other circuit parts is performed, and etching is performed to form the input / output electrodes 2 and the circuit part (not shown) on the surface layer. A cross section of the main part at this time is shown in FIG. After that, the anisotropic conductive film 7 made of the conductive adhesive 6 dispersed in the insulating adhesive 5 to the extent that the insulating property is not impaired is attached onto the circuit board 1 having the input / output electrodes 2. Subsequent steps are as described in the first embodiment.

FIG. 11 shows a state in which the semiconductor device 3 is mounted. When removing the semiconductor device 3, the insulating adhesive 5
Thus, a force acts to peel the input / output electrode 2 from the base material, but since the tip portion of the input / output electrode 2 is surrounded by the base material and becomes a wedge, it is possible to withstand the peeling force. Therefore,
As shown in FIG. 12, the input / output electrode 2 is not peeled off, and the input / output electrode itself is not cracked.

After that, the anisotropic conductive film 7 is attached again on the circuit board 1, and the semiconductor device 3 having the protruding electrodes 4 formed thereon is positioned and superposed on the circuit board 1. After that, heating and pressurization are simultaneously performed to cure the insulating adhesive 5. Therefore, even when the semiconductor device 3 is mounted again, there is no contact with the semiconductor device 3 due to the jump of the tip of the input / output electrode, and the occurrence of disconnection of the input / output electrode 2 itself can be suppressed, and the reliability is high and stable. The electrical connection can be obtained.

The projection electrodes formed on the semiconductor device are not limited to the wire bonding method, and the projection electrodes (plating bumps) formed by a known plating apparatus (not shown) are the same. In addition, not only the electromechanical connection by the anisotropic conductive film but also the flip chip mounting in which the semiconductor device is mounted using the insulating adhesive between the semiconductor device and the circuit board is the same in all mounting methods. Is.

(Embodiment 3) FIG. 13 is a diagram showing a step 1 of forming a tip shape of an input / output electrode in a third embodiment of the present invention, and FIG. 14 is a tip shape of an input / output electrode in a third embodiment of the present invention. Manufacturing Step 2 FIGS. 15A and 15B are cross-sectional views of essential parts in a joined state when the anisotropic conductive film of the semiconductor device and the circuit board according to the third embodiment of the present invention are used, and FIG. 16 is the third embodiment of the present invention. FIG. 6 is a cross-sectional view of a main part after the semiconductor device in is removed. The third embodiment relates to the invention described in claim 3.

In FIG. 13, 1 is a circuit board, 2 is an input / output electrode, and in FIG. 14, 13 is the same material as the circuit substrate. 15, 3 is a semiconductor device, 4 is a protruding electrode, 5 is an insulating adhesive, 6 is a conductive particle, and FIG.
In, F is a force applied to the semiconductor device when the semiconductor device is removed.

In the third embodiment, first, as shown in FIG.
In the step of forming the circuit board 1 by a subtractive method in which an etching resist is provided on the circuit forming portion to form the circuit portion by etching, after forming the circuit portion, a material equivalent to the base material under the circuit portion is formed on the entire circuit board. Apply. Then, by removing only the base material applied to the upper part of the input / output electrode 2, the side surface of the input / output electrode 2 was covered with the same material 13 as the base material as shown in FIG. 14, and only the surface was exposed. A circuit board having the same shape as that formed by the additive method is formed.

Thereafter, an anisotropic conductive film 7 made of conductive particles 6 dispersed in an insulating adhesive 5 to such an extent that the insulating property is not impaired is attached onto the circuit board 1 having the input / output electrodes 2. . Subsequent steps are as described in the first embodiment.

By doing so, the periphery of the input / output electrode 2 is surrounded by the base material even after the semiconductor device 3 is mounted as shown in FIG. Is only the upper surface of the input / output electrode 2. Therefore, even when the semiconductor device 3 is removed, the force for peeling the input / output electrode 2 from the base material acts only on the upper surface of the input / output electrode 2, and the periphery is surrounded by the base material. As in the above, the input / output electrode 2 cannot be peeled off. Therefore, the input / output electrode 2 is not peeled off, and the input / output electrode 2 itself is not cracked.

After that, the anisotropic conductive film 7 is attached again on the circuit board 1, and the semiconductor device 3 having the protruding electrodes 4 formed thereon is positioned and superposed on the circuit board 1. After that, heating and pressurization are simultaneously performed to cure the insulating adhesive 5. Therefore, even when the semiconductor device 3 is mounted again, there is no contact with the semiconductor device 3 due to the jump of the tip of the input / output electrode, and the occurrence of disconnection of the input / output electrode 2 itself can be suppressed, and the reliability is high and stable. The electrical connection can be obtained.

The projection electrodes formed on the semiconductor device are not limited to the wire bonding method, and the projection electrodes (plating bumps) formed by a known plating apparatus (not shown) are the same. In addition, not only the electromechanical connection by the anisotropic conductive film but also the flip chip mounting in which the semiconductor device is mounted using the insulating adhesive between the semiconductor device and the circuit board is the same in all mounting methods. Is.

[0046]

As described above, according to the first aspect of the invention, a problem occurs in the electrical connection between the semiconductor device itself and the protruding electrode and the input / output electrode. Peeling does not occur, and the input / output electrodes themselves do not crack. Therefore, even when the semiconductor device is mounted again,
There is no contact with the semiconductor device due to the jumping up of the tip of the input / output electrode, and the occurrence of disconnection of the input / output electrode itself can be suppressed, and reliable and stable electrical connection can be obtained.

According to the invention described in claims 2 to 4 ,
Without contact to the semiconductor device according to bounce input and output electrode tip portion, and input and output the occurrence of disconnection of the electrode itself can be suppressed, it is possible to obtain electrical connection reliable and stable.

[Brief description of drawings]

FIG. 1 is a sectional view showing an example of an input / output electrode shape according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing a state in which the anisotropic conductive film according to Embodiment 1 of the present invention is attached to a substrate.

FIG. 3 is a process diagram of forming a stud bump according to the first embodiment of the present invention.

FIG. 4 is a cross-sectional view of essential parts in a joined state when using an anisotropic conductive film for a semiconductor device and a circuit board according to the first embodiment of the present invention.

FIG. 5 is a cross-sectional view of essential parts after the semiconductor device according to the first embodiment of the present invention is removed.

FIG. 6 is a cross-sectional view showing a state in which the anisotropic conductive film is again attached to the substrate according to the first embodiment of the present invention.

FIG. 7 is a cross-sectional view of essential parts in a joined state when the semiconductor device according to the first embodiment of the present invention is mounted again on the circuit board using the anisotropic conductive film.

FIG. 8 is a diagram illustrating a step 1 of forming a tip shape of an input / output electrode according to the second embodiment of the present invention.

FIG. 9 is a diagram showing a step 2 of forming tip shapes of input / output electrodes according to the second embodiment of the present invention.

FIG. 10 is a diagram 3 of a step of forming the tip shape of the input / output electrode according to the second embodiment of the present invention.

FIG. 11 is a cross-sectional view of essential parts in a joined state when using an anisotropic conductive film for a semiconductor device and a circuit board according to a second embodiment of the present invention.

FIG. 12 is a cross-sectional view of essential parts after the semiconductor device according to the second embodiment of the present invention is removed.

FIG. 13 is a diagram showing a step 1 of forming tip shapes of input / output electrodes according to the third embodiment of the present invention.

FIG. 14 is a diagram illustrating a step 2 of forming tip shapes of input / output electrodes according to the third embodiment of the present invention.

FIG. 15 is a cross-sectional view of essential parts in a joined state when using an anisotropic conductive film for a semiconductor device and a circuit board according to a third embodiment of the present invention.

FIG. 16 is a cross-sectional view of essential parts after the semiconductor device according to the third embodiment of the present invention is removed.

FIG. 17 is a sectional view showing a state in which an anisotropic conductive film is pasted on a substrate by a conventional method.

FIG. 18 is a cross-sectional view of essential parts in a joined state when an anisotropic conductive film for a semiconductor device and a circuit board is used in a conventional method.

FIG. 19 is a cross-sectional view of essential parts after the semiconductor device is removed by a conventional method.

FIG. 20 is a cross-sectional view of essential parts in a joined state when the semiconductor device is mounted again on the circuit board using the anisotropic conductive film in the conventional method.

[Explanation of symbols]

1 circuit board 2 input / output electrodes 3 Semiconductor device 4 Projection electrode (stud bump) 5 Insulating adhesive 6 Conductive particles 7 Anisotropic conductive film

Claims (3)

(57) [Claims] 1. A mounting method for mounting a semiconductor device having a protruding electrode on a flexible circuit board via an insulating adhesive, wherein the semiconductor device is positioned and superposed on the circuit board and heated. The semiconductor device can be removed from the circuit board without completely curing the insulating adhesive when the tip of the input / output electrode is pressed by the protruding electrode and depressed into the base material of the circuit board by simultaneously applying pressure and Including the step of curing to a certain degree and the step of inspecting whether there is a defect in the electrical connection between the protruding electrode and the input / output electrode. If no defect occurs, further heating is performed to insulate the insulating adhesive. A method for mounting a semiconductor device, characterized in that the semiconductor device is completely cured, and on the other hand, when a defect occurs, the semiconductor device is peeled off from the circuit board and removed. 2. A semiconductor device having a protruding electrode, wherein the tip of the input / output electrode is provided with a thickness of the input / output electrode via an insulating adhesive.
This is a mounting method for mounting on a circuit board located in a deeper recess than the above. The semiconductor device is positioned and superposed on the circuit board, and heating and pressing are performed at the same time without completely curing the insulating adhesive. Including the step of curing the semiconductor device to the extent that the semiconductor device can be removed from the circuit board, and the step of inspecting the electrical connection between the protruding electrodes and the input / output electrodes for defects. A method of mounting a semiconductor device, further comprising heating to completely cure the insulating adhesive, and when a defect occurs, the semiconductor device is peeled off from the circuit board and removed. 3. The protruding electrode of the semiconductor device is connected to the tip of the input / output electrode.
A mounting structure of a semiconductor device, which is mounted on the circuit board via an insulating adhesive, facing a circuit board having a recess deeper than the thickness of the portion, wherein the tip portion of the input / output electrode is provided with the protrusion. A mounting structure for a semiconductor device, wherein the mounting structure is located in a recess lower than a position where an electrode is mounted.