JP3492178B2 - Semiconductor light emitting device and method of manufacturing the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device which is used for an indicator, a message board, a visual display device, etc. and has improved adhesion between a resin encapsulant and a resin stem, and a manufacturing method thereof. .

[0002]

2. Description of the Related Art One of conventional semiconductor light emitting devices is to mount a semiconductor light emitting element on a printed circuit board on which printed wiring is printed, mount a case mold on the printed circuit board, and inject resin from the end of the printed circuit board to perform a lens action. It was obtained by forming a light-transmissive resin sealing body having

On the other hand, a conventional surface mount type semiconductor light emitting device without a lens is as shown in FIG. That is, the resin stem 10 has the recess 7 formed therein, and the semiconductor light emitting element 1 is mounted therein. The inclined side surface 8 of the recess 7 acts as a light reflecting surface. Leads 21 and 22 are integrated with the resin stem 10.
The leads 21 and 22 are obtained by molding a lead frame composed of a Fe-based or Cu-based thin metal plate. The resin stem 10 is made of silica (S
Polycarbonate (PC) containing filler such as io ₂ )
It is obtained by injection molding a thermoplastic resin such as. One end portions of the leads 21 and 22 connected to the semiconductor light emitting element are arranged on the bottom surface of the recess 7 of the resin stem 10. The semiconductor light emitting device 1 is fixed to the leads 21 with a conductive paste 3 containing silver (Ag) or the like. The first electrode of the semiconductor light emitting device 1 is connected to the lead 21, and the second electrode is electrically connected to the lead 22.
The second electrode and the lead 22 are connected by a bonding wire 4 such as a gold (Au) wire. Leads 21, 2
A light-transmissive resin encapsulant 5 made of a thermosetting resin that covers one end portion of the semiconductor light emitting element 1 and the bonding wire 4 is formed on the resin stem 10.

[0004]

However, a resin encapsulant formed by mount-bonding a semiconductor light-emitting element on a printed circuit board as described above, bringing the case die into close contact with the printed circuit board, and injecting resin from the end thereof. The semiconductor light emitting device has a high cost, and the injected resin leaks. In addition, a chipped or unfilled part of the sealing body may be formed,
Bubbles were generated, and there was a problem in appearance.
In addition, high manufacturing cost has been a problem because an expensive printed circuit board is used and the injection speed is slow.

On the other hand, in the surface-mounted semiconductor light emitting device shown in FIG. 22, there is a problem that the lens is not attached and the light collecting efficiency is low. Further, there is a problem that the adhesiveness between the resin sealing body made of the thermosetting resin and the resin stem made of the thermoplastic resin is not good.

The present invention has been made under such circumstances, and it is easy to form a lens, the adhesion between the resin encapsulant and the resin stem is improved, the moisture resistance is improved, and the reflection efficiency is further improved. A low-cost semiconductor light emitting device with improved light extraction efficiency and a method for manufacturing the same are provided.

[0007]

In order to solve the above problems, a semiconductor light emitting device of the present invention comprises a semiconductor light emitting element,
A resin stem having a first lead, a second lead, and a resin portion provided so as to cover a part of the first lead, the one end of the first lead, and the one end of the second lead. Are respectively led out from the resin portion to the outside, and the resin portion includes the semiconductor light emitting element, the other end of the first lead electrically connected to the first electrode of the semiconductor light emitting element, and A resin stem having a recess for accommodating the other end of the second lead electrically connected to the second electrode of the semiconductor light emitting element, and a light-transmissive resin filled in the recess of the resin stem. And a protrusion made of a light-transmissive resin that covers the entire upper surface of the resin stem and the entire upper side surface extending to a predetermined distance from the upper surface, and the bottom surface of the protrusion has the first and second sides. Not in contact with the lead of the And wherein the Rukoto.

Further, the light transmissive resin filled in the recess of the resin stem is a silicon resin. The silicon resin is filled with a phosphor. Further, the semiconductor light emitting device is characterized by being made of a GaN-based material. Alternatively, the resin stem has at least one through hole at the bottom of the recess. The resin stem has at least one through hole that extends from the upper surface to the lower surface. The protrusion constitutes a lens, the vertical centerline of the protrusion and the vertical centerline of the resin stem coincide with each other, and the vertical centerline of the semiconductor light emitting element is the same as these centerlines. It is characterized in that it is configured to match.

Further, it is characterized by further comprising a phosphor for converting light emitted from the semiconductor light emitting device into light of different wavelengths. Here, the phosphor is contained in the resin portion of the resin stem, or is applied on the inner wall surface of the recess of the resin stem, or is applied to the back surface of the semiconductor light emitting device for mounting adhesion. It is contained in the agent, or in the light-transmissive resin filled in the concave portion, or in the light-transmissive resin forming the protrusion.

On the other hand, the cross-sectional shape of the recess of the resin stem in the horizontal direction is characterized in that the diameter of the lead-out direction of the first and second leads is larger than the diameter of the direction perpendicular to this direction. Further, the first electrode of the semiconductor light emitting device is
It is characterized in that it is connected to the first lead by a bonding wire, and the second electrode of the semiconductor light emitting element is connected to the second lead by a bonding wire. Alternatively, the center of the cross section of the resin stem in the horizontal direction of the recess is deviated from the center of the cross section of the resin stem in the horizontal direction. Further, the second electrode of the semiconductor light emitting device is connected to the second lead by a bonding wire, and the center of the recess of the resin stem in the horizontal cross-sectional shape is the center of the horizontal cross-sectional shape of the resin stem. From the first lead to the lead-out direction of the second lead.

Further, the inner wall side surface of the concave portion constitutes a reflecting surface. Further, the resin portion of the resin stem is made of a thermoplastic resin of 65% by weight or more and a filler of 35% by weight or less of a filler, and the filler has high reflectivity such as titanium oxide, silicon oxide, and aluminum oxide. It is composed of a substance, and the content of the titanium oxide is 10 to 15% by weight.

A method for manufacturing a semiconductor light emitting device of the present invention is
A step of integrally molding a lead frame having first and second leads and a resin portion, and forming a resin stem in which the tips of the leads are arranged to face each other in a recess formed in the upper surface of the resin portion. And mounting a semiconductor light emitting element having first and second electrodes in the recess, electrically connecting the first lead and the first electrode, and connecting the second lead and the second electrode. The step of electrically connecting the electrodes of, the step of injecting a fluid resin of thermosetting resin into the case case for sealing, the upper surface of the resin stem and the upper side surface extending from the upper surface are used for the sealing. And a step of curing the fluid resin to form a protrusion made of a light-transmissive resin on the resin stem, wherein the protrusion is formed on the resin stem. The entire top surface and from this top surface So as to cover the entire upper side extending to a distance of a constant, also the bottom surface of the projecting portion, the first
And the second leads are not in contact with each other, and are formed to have a predetermined interval.

Further, in the method for manufacturing a semiconductor light emitting device of the present invention, the lead frame having the first and second leads and the resin portion are integrally molded, and the leads are formed in the recess formed on the upper surface of the resin portion. Forming resin stems in which the tips of the two are arranged so as to face each other;
And mounting a semiconductor light emitting device having a second electrode,
Electrically connecting the first lead and the first electrode and electrically connecting the second lead and the second electrode; and the semiconductor light emitting device and the first and second electrodes. Of the thermosetting resin so as to cover the above-mentioned tips of the leads of the
The step of injecting the fluid resin into the recess, the step of injecting the second fluid resin of the thermosetting resin into the sealing case mold, and the step of injecting the first fluid resin into the recess of the resin stem. A step of butting the resin stem into the second fluid resin in the encapsulating case die, butting the resin stem against the surface of the second fluid resin of the encapsulating case die; Curing to form a light-transmissive resin encapsulant in the recess and a protrusion formed of a light-transmissive resin on the resin stem, wherein the protrusion is the entire upper surface of the resin stem. And the upper side surface extending from the upper surface to a predetermined distance so as to cover the entire upper side surface.

Here, the resin stem is immersed in the second fluid resin in the encapsulating case mold with the upper surface where the recess is opened facing down. Further, the resin stem is immersed until the lead frame comes into contact with the opening end of the sealing case mold. Further, a stopper portion is provided at an opening end portion of the sealing case type, and the resin stem is crushed until the lead frame comes into contact with the stopper portion. Alternatively, the resin stem is provided with a stopper portion, and the resin stem is crushed until the lead frame contacts the stopper portion.

On the other hand, the lead frame has the first
And a plurality of lead pairs including the second lead are formed. In addition, the case type for sealing is
It is characterized in that it is composed of a case type row in which a plurality of pieces are arranged in one row. Also, for each lead pair of the lead frame,
Each of the resin stems is formed, and each of the resin stems is immersed in a corresponding sealing case die of the case die row.

Here, the first fluid resin and the second fluid resin are made of different resin materials. Further, the resin stem is irradiated with ultraviolet rays before being filled with the fluidized resin in the recess of the resin stem.

In the semiconductor light emitting device of the present invention, since the protruding portion of the light-transmissive resin is formed so as to surround the resin stem from the upper surface to the entire upper side surface, the adhesion between the protruding portion and the resin stem is improved. The ultraviolet irradiation improves the bonding ability between the thermoplastic resin stem of the thermoplastic resin and the light transmissive resin of the thermosetting resin. The semiconductor light emitting element is aligned with the vertical centerline of the protrusion and the vertical centerline of the resin stem, and the center l of the recess is deviated from the center of the resin stem to improve the light emission efficiency. it can. The through hole of the resin stem facilitates the coupling of the light transmissive resin with the resin stem. The stopper portion can separate the protruding portion from the lead frame (lead).

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. First, referring to FIG. 1 to FIG.
An example will be described. 1 is a sectional view of the semiconductor light emitting device, FIG. 2 is a plan view of the semiconductor light emitting device, and FIG. 1 is a sectional view of a portion along the line AA ′ in this figure. Figure 3
FIG. 4 is a conceptual plan view of the resin stem for explaining the position of the resin stem of the semiconductor light emitting element, and FIG. 4 is a sectional view of a portion taken along the line AA ′ shown in FIG.

As shown in FIG. 1, the resin stem 10 has leads 21 and 22 formed by molding a lead frame and a resin portion 10A integrally molded. Resin part 1
On the upper surface of 0A, there is formed a recess having an opening wider than the bottom and having a reflecting surface 8 inclined to the side. The resin portion 10A of the resin stem 10 is, for example, as shown in the drawing,
It is composed of a substantially square lower part and a substantially circular upper part having a recess. The ends of the leads 21 and 22 are arranged to face each other on the bottom surface of the recess. The other ends of the leads 21 and 22 are led out from the resin portion in directions opposite to each other. These leads are molded in the lead frame cutting / forming process. GaP, GaAlAs, GaAsP, I
A semiconductor light emitting device 1 made of nGaAlP, GaN, or the like has first and second electrodes (not shown), and is mounted on an end portion of a lead 21 on the bottom surface of a recess with an Ag paste 3 or the like. There is.

The second electrode and the lead 2 of the semiconductor light emitting device 1
2 is connected by a bonding wire 4 such as an Au wire. A thermosetting resin is filled in the recess of the resin portion 10A up to the opening position of the recess to form the light-transmissive resin sealing body 5. On this resin stem 10, a protruding portion 9 of a light-transmitting resin sealing body made of a thermosetting resin is formed. The protrusion 9 is used, for example, as a lens. The projecting portion 9 covers the upper surface of the resin stem 10 including the surface of the resin sealing body 5 and the upper side surface portion continuing from the upper surface. The semiconductor light emitting device 1 in the recess is
The protrusions 9 are arranged along the vertical centerline O. The center line O is also a vertical center line of the resin stem 10. However, the center of the recess is the resin stem 1
Since it is arranged and formed so as to deviate from the center of the 0 upper surface, the vertical center line O ′ of the recess does not coincide with the center line O. With this structure, the semiconductor light emitting device 1 and the reflecting surface 8
And the reflecting surface 8 is more effectively operated than in the conventional case, and the light extraction efficiency is improved. The protrusion 9 is thicker than the upper side surface of the resin stem 10 by a thickness t so as to cover the entire upper side surface (length x) of the resin stem 10. Then, the protruding portion 9 and the leads 21 or 22 are not in contact with each other, and the protruding portion 9 to the leads 21 and 22 are
It has a predetermined interval y.

In this embodiment, the thickness t of the protruding portion 9 on the side surface of the resin stem is 2 m regardless of whether the size of one side of the resin portion 10A is 2.4 mm or 4.5 mm.
It is about m. At the time of manufacturing, the semiconductor light emitting device is completed by attaching the protruding portion 9 to the resin stem 10 and then cutting / forming the lead frame to form the leads 21 and 22. The forming shape of the lead can be various shapes such as a gull wing type and a J-vent type.

Next, the structure of the resin stem of the semiconductor light emitting device of FIG. 1 in this embodiment will be described in more detail with reference to FIGS. 3 and 4. These figures are a plan view and a cross-sectional view of a resin stem on which a semiconductor light emitting element is mounted, and the protrusions are not shown to clarify the position of the semiconductor light emitting element. The resin portion 10A of the resin stem 10 has a substantially square shape or a substantially rectangular shape (for example, 3.0 × 3.4 mm).
Alternatively, the upper part including the upper surface 10 ′ has a cylindrical shape with a size of about 5.0 × 5.4 mm). BB 'shown in FIG.
The line and the line CC ′ are the center lines of the opposing sides. FIG. 4 shows a vertical centerline O of the resin stem 10. As described above, the upper surface 10 ′ of the resin stem 10 has a substantially circular shape, and the concave portion 7 formed therein has a substantially elliptical shape (major axis R, minor axis r). The leads 21 and 22 are
One ends thereof are opposed to each other and extend in opposite directions, and are led out to the outside from opposite sides. The lead-out directions of the leads 21 and 22 are the same as the center line BB '. The semiconductor light emitting device 1 is arranged in the recess 7 so as to be present on any of the center lines BB ′, CC ′ and O. The concave portion 7 is not formed in the center of the resin stem upper surface 10 ′ and is eccentric to the lead 22 side in the lead-out direction (the distance H from the lead-out side of the lead 21 to the concave portion> the lead 22). The distance from the leading edge to the recess h).

The reason for eccentricity is to secure the bonding wire area. That is, while sufficiently securing the bonding wire area, the distance between the reflecting surface 8 and the semiconductor light emitting device 1 in the other directions is set as shown in FIG.
3 and the conventional example of FIG. 24. Also in the illustrated conventional example, the semiconductor light emitting element 1 is formed and arranged on the center lines BB ′, CC ′, and O. However, since the concave portion 7 is arranged at the center of the resin stem 10, the area of the concave portion 7 inevitably becomes large in order to secure the bonding region of the bonding wire 4. Comparing FIG. 3 and FIG. 23, the recess of FIG. 23 is obviously larger than the recess of FIG. 3 (the resin stem has the same size as shown in FIGS. 3 and 23). That is, the distance from the bottom end of the recess 7 to the semiconductor light emitting element 1 is smaller in this embodiment (D> d).

As described above, according to the present invention, the distance between the semiconductor light emitting element 1 and the reflecting surface 8 can be made shorter than in the above, and the reflecting surface 8 can be more effectively operated. That is, it becomes possible to reflect a larger amount of light than the conventional one on the reflecting surface 8 and take it out to the outside. As a result, the light extraction efficiency can be improved.

Further, the light-transmissive resin encapsulant constituting the protrusion 9 in the present invention is made of a thermosetting resin, while
The resin portion 10A of the resin stem 10 is formed of a thermoplastic resin. Therefore, originally, the adhesion between the two is not so good. However, according to the present invention, since the protruding portion 9 of the light-transmissive resin encapsulant covers not only the upper surface of the resin portion 10A but also the upper side surface continuing from this upper surface, the resin stem and the light-transmissive resin sealing material are sealed. The adhesion strength with the stopper is improved, the moisture resistance is improved, and cracks due to temperature stress are reduced.

Furthermore, since the resin portion 10A is molded on the lead frame, the surface of the resin stem 10 can be easily exposed, and the lead frame can be processed. In addition, mountability when the completed semiconductor light emitting device is incorporated into a set or the like is also improved.

Next, a method of manufacturing the semiconductor light emitting device of the present invention will be described. 5 to 8 are explanatory views related to the method for manufacturing the semiconductor light emitting device of the first embodiment of the present invention. That is, FIG. 5 is a flow chart showing the manufacturing process, FIGS. 6 and 7 are sectional views of the step of forming the protrusion of the light-transmissive resin, and FIG. 8 is a sectional view and plan view of the resin stem.

The following processing is performed to form the semiconductor light emitting device shown in FIG. First, the lead frame is loaded into a resin mold, and the thermoplastic resin is filled in the cavity by an injection molding method or the like. As a result, a resin stem (resin stem) 10 having a resin portion 10A made of a thermoplastic resin is formed (FIG. 5 (1)). A recess is formed on the upper surface of the resin stem. Leads forming a lead frame are arranged in a predetermined direction in the recesses. The semiconductor light emitting device 1 (hereinafter referred to as a chip) is attached to one of the leads. In this case, it is fixed to the first electrode of the chip by Ag paste or the like (FIG. 5 (2)).
One end of the bonding wire is connected to the second electrode of the chip, and the other end of the bonding wire is connected to another lead (FIG. 5 (3)). Next, a thermosetting resin is filled in the recess in which the chip is mounted (FIG. 5 (4)). On the other hand, uncured fluid resin is injected into the sealing case mold (Fig. 5).
(5)). Then, the upper surface portion of the resin stem is dipped in the sealing case mold (FIG. 5 (6)). About this processing step,
This will be described with reference to FIG.

A fluid resin 12 is injected into the sealing case mold 11. Resin stem 1 against this fluid resin
0 is soaked with its upper surface facing down, and is lowered until the leads 21 and 22 serving as stoppers come into contact with the sealing case mold 11. The leads 21 and 22 are kept in contact with the encapsulating case mold 11 until the fluidized resin is cured. When the resin is cured and the protrusions 9 are formed, the leads 21 and 22 are taken out from the encapsulating case mold (FIG. 5). (7)). Although not used in this embodiment, a release agent may be applied beforehand to the inner surface of the sealing case mold. Protrusion 9 formed in this way
Can be used, for example, as a lens. After that, the lead frame is cut, and the leads are shaped into a desired shape (FIG. 5 (8)). Next, the semiconductor light emitting device is tested and then post-processed to complete the semiconductor light emitting device (FIG. 5 (9)).

FIG. 7 shows a second method of steps (6) and (7). In this case, the sealing case die 11 has at least one protrusion 1 that serves as a stopper around the opening.
3 is provided. When the resin stem 10 comes down from above, the leads 21 and 22 come into contact with the protrusion 13. That is, since the lead does not hit the encapsulating case mold, the flowing resin does not flow out (resin leakage) between the lead and the encapsulating case mold due to the capillary phenomenon. The semiconductor light emitting device shown in FIG. 1 is formed by this method. Therefore, the bottom surface of the protruding portion 9 is not in contact with the leads,
It has a predetermined interval y. The interval y corresponds to the height y of the protrusion 13 of the sealing case mold 11. As a matter of course, the spacer between the lead and the sealing case die may be formed on the resin stem instead of being provided on the sealing case die as shown in the drawing. It is necessary to consider the position of the protrusion 13 in the sealing case mold so that the lead (lead frame) does not come into contact when the resin stem 10 is dipped.

FIG. 8 shows a third method of steps (6) and (7). In this method, the resin stem 10
At least one through hole 14 is formed in a region where the concave portion is not formed. FIG. 8 shows an example in which one through hole 14 is provided at each of four corners of the resin stem 10. With such a configuration, when the resin stem 10 is dipped in the sealing case mold into which the fluid resin has been injected, it can serve as an escape route for the injected fluid resin.

Next, the second semiconductor light emitting device of the present invention will be described. FIG. 9 is a plan view and a sectional view of the semiconductor light emitting device, and FIG. 10 is a sectional view of the semiconductor light emitting device for explaining a method for forming the semiconductor light emitting device. The semiconductor light emitting device shown in FIG. 9 has a configuration similar to that of FIG. The semiconductor light emitting element 1 is mounted on the resin stem 10, and the resin sealing body 5 made of a light transmissive resin is filled therein. A lens-shaped light-transmitting resin protrusion 9 is formed on the upper surface of the resin stem 10 including the resin sealing body 5. The protrusion 9 is
Since it is formed so as to cover the upper surface of the resin stem 10 and the side surface subsequent thereto, the resin stem 10 and the protruding portion 9 have high adhesion. The semiconductor light emitting element 1 is arranged on the vertical center line between the protrusion 9 and the resin stem 10. Further, in order to increase the light extraction efficiency, the concave portion of the resin stem 10 is eccentrically formed and arranged so as to come closer to the side in the direction in which the lead 22 is led out from the center (hence, the side in the direction in which the lead 21 is led out). Away from). In other words, the space between the bonding wires is secured and the distance between the semiconductor light emitting element 1 and the reflecting surface 8 is shortened in the other directions.

In order to form the protrusion 9, as shown in FIG. 10, the case 7 for sealing and the recess 7 of the resin stem 10 are formed.
In the state where both and are filled with a thermosetting resin fluid resin,
A case type fluid resin 1 for sealing the resin stem 10 from above.
Try to get inside 2. With this configuration, even if the resin shrinks when the fluid resin cures, the resin located between the sealing case mold 11 and the resin stem 10 (regions A and B in FIG. 10) is replenished or replenished. Will be absorbed. Therefore, the protruding portion 9 retains the lens shape even after the resin is cured, and the joint portion with the resin stem 10 does not have a resin defect.

Further, in order to prevent leakage of the resin before curing to the outside, it is not necessary to forcibly abut the resin stem 10 and the sealing case die. Therefore, according to the present invention, it is not necessary to secure the stability of the pressing force at the time of abutting, and there is an advantage that the accuracy of the combination of the sealing case mold 11 and the resin stem 10 may be low. That is, according to the present invention, the precision of the parts of the combined portion may be low, and the manufacturing becomes easy.

Next, another method of manufacturing the semiconductor light emitting device of the present invention will be described with reference to FIG. FIG. 11 is a cross-sectional view of a semiconductor light emitting device illustrating another method of forming the semiconductor light emitting device shown in FIG. When the resin stem 10 and the fluid resin 12 in the sealing case mold 11 are butted against each other,
Bubbles may get in. This embodiment was designed to prevent the generation of such bubbles, and a high quality resin encapsulant can be formed. Both the sealing case die 11 and the recess 7 of the resin stem 10 are filled with a fluid resin of thermosetting resin. The amount of each liquid is adjusted so that it becomes convex. In such a state, the resin stem 1
0 is made to enter into the fluid resin 12 of the case type for sealing from the upper surface. Both fluid resins come into contact with each other from the center of the convex surface, and the contact area expands toward the outer periphery. Therefore, the inclusion of bubbles can be sufficiently prevented. At least one of the liquid surfaces may be convex, and if one is convex, the other surface may be flat or concave, and the same effect can be obtained.
Further, the same effect can be obtained by forming the through hole 15 for removing bubbles in the recess of the resin stem 10.

Next, a third semiconductor light emitting device of the present invention will be described. Conventionally, in the surface mount type semiconductor light emitting device,
There are the following technical issues and improvements are required.
Due to the structure, it is difficult to form a lens, so that the luminance is low, and further, since the resin surface is dented due to variations in the amount of resin, curing shrinkage of the epoxy resin, etc., variations in luminance are large.
In general, the distance between the semiconductor light emitting element / stem reflection surface is long, and the effect of the reflector is small especially when the active layer is near the surface of the element such as an InGaAlP-based semiconductor light emitting element. Since the epoxy resin having a low Tg (glass transition temperature) is used, the epoxy resin of the resin encapsulant applies a resin stress to the bonding wire (Au wire) due to a change in ambient temperature to accelerate the disconnection. Epoxy resins having a low Tg have a low crosslink density after curing and are weak in moisture resistance.

In contrast to such a conventional semiconductor light emitting device, in the semiconductor light emitting device of the present embodiment, as in FIG. 1, the resin stem 10 is provided with a light-transmissive resin protrusion and the resin stem 10 is recessed. By filling silicon resin into the semiconductor light emitting element and A
The resin stress on the u-line can be significantly reduced. Further, the height of the reflection plate 8 of the resin stem 10 is increased to approach the semiconductor light emitting element 1, and the light emitted from the side surface of the element is reflected upward to improve the light output. Further, it is possible to provide a high-output, high-quality semiconductor light emitting device having a reflector shape of a paraboloid of revolution.

The manufacturing method will be described below with reference to FIG. First, the leads 21 and 22 formed of an iron (Fe) -based or copper (Cu) -based lead frame are connected to a liquid crystal polymer (LCP), SPS,
A resin stem 10 is formed by injection molding a high heat resistant thermoplastic resin such as PPS. Next, ultraviolet irradiation is performed, and the semiconductor light emitting element 1 is further coated with Ag paste 3
It adheres by heating at 00 ° C for about 2 hours. Furthermore, Φ25〜
The semiconductor light emitting device 1 and the lead 22 are connected by the Au wire 4 of Φ30 μm.
Connect. Next, a light-transmissive silicone resin is dropped on the resin stem 10 to completely cover the semiconductor light emitting element 1 and the Au wire 4, and heated at 150 ° C. for about 5 hours to form the sealing body 5. Next, although not shown, a protrusion of a light-transmissive resin used for a lens is formed on the resin stem 10 by the same method as in the first embodiment, and the leads 21 and 22 are formed by heating and curing at 125 ° C. for about 6 hours. The leads are cut and completed after exterior treatment with solder, Sn, Au, or the like.

FIG. 12 is a sectional view of a resin stem on which a semiconductor light emitting element is mounted. Here, the reflection surface is the conventional one (see FIG. 2).
2), the light emitted from the side surface of the light emitting element is made to contribute as external emission light by bringing the light emitting element 1 closer to the semiconductor light emitting element 1 and further increasing the height of the reflection surface (the side surface emission light starts from the active layer). And because the run version is distributed, the height of the reflecting surface is high, and the closer the reflecting surface is to the light emitting element, the greater the reflector effect). Here, the illustrated example is a flat reflector, but the reflection effect is further increased by adopting a reflecting surface of a paraboloid of revolution.

Further, in this embodiment, the resin stem 1
A light-transmissive silicon resin is used as a material for sealing the 0 recess. As described above, by using the silicone resin, the effect that the resin stress can be remarkably reduced can be obtained. That is, in the conventional low Tg epoxy resin, the thermal expansion and contraction of the epoxy resin due to the ambient temperature change exerts a stress on the Au wire 4, so that the long-term (1
When a temperature cycle is applied, there is a problem that the Au wire 4 causes fatigue disconnection. On the other hand, as in this embodiment, the semiconductor light emitting device 1 and the Au wire 4 are used.
By completely covering the periphery of the silicone resin 5,
The resin stress of the sealing body 5 can be remarkably reduced, and at the same time, the resin stress from the protruding portion 9 (see FIG. 1) can be almost eliminated (the silicon resin also thermally expands and contracts, but the stress does not occur). Is extremely small and can be ignored).

Further, in the conventional product, since the adhesion between the epoxy resin and the stem made of a thermoplastic resin is poor, an epoxy resin having a low Tg is used. On the other hand, in this embodiment, by irradiating the resin stem with ultraviolet rays as described above, the resin surface can be activated and the adhesiveness can be improved even with an epoxy resin having a high Tg. The moisture resistance level of the device can also be significantly improved.

Further, in this embodiment, since the Fe-based or Cu-based lead frame is used, the cost is low, and the step of integrally forming the resin stem on the lead frame is also performed in-line, so that the price of the semiconductor light emitting device is also low. it can.

Further, in this embodiment, since the case-shaped shape is a lens shape, the light emitted from the light emitting element is condensed and the brightness is greatly improved. In addition, a variety of lead forming shapes can be used for various purposes. Furthermore, by changing the sealing case type, it is possible to line up semiconductor light emitting devices having various optical characteristics.

Next, another embodiment of the present invention will be described with reference to FIGS. The filler contained in the thermoplastic resin forming the conventional resin stem is mainly silica (SiO ₂ ), and the reflectance is low, resulting in a problem that the light output is low. Further, in general, thermosetting resin such as epoxy resin and thermoplastic resin have no chemical bond, so that adhesion is poor, and since epoxy resin having a low Tg is used, there is a problem that moisture resistance is poor. It was

On the other hand, in this embodiment, the composition of the resin portion 10A of the resin stem 10 used in the semiconductor light emitting device illustrated in FIG. 1 is improved. That is, in this example, the resin stem provided with the reflection plate composed of the thermoplastic resin and the filler has a weight ratio of the thermoplastic resin of 65% or more and the filler of less than 35%, and the filler is titanium oxide, A resinous stem made of aluminum oxide and having a titanium oxide content of 20% or less by weight is used. Further, as the thermoplastic resin material, a high heat resistant resin such as liquid crystal polymer (LCP) is used. further,
It is characterized in that the resin stem after molding is irradiated with ultraviolet rays.

The outline of the manufacturing method is as follows. First, Fe-based or Cu-based 0.1 such as NSD
Prepare a lead frame made of a thin metal plate of ˜0.2 mm. Next, the resin stem 10 is formed on the lead frame by injection molding using a highly heat-resistant thermoplastic resin such as LCP, PPS, or SPg containing a filler containing TiO ₂ as a main component. After the semiconductor light emitting device 1 such as GaP is fixed to the resin stem 10 with the Ag paste 3 (about 200 hours at 200 ° C.), it is extra fine (Φ25).
Wire bonding is performed with a bonding wire (Au wire) 4 having a diameter of Φ30 μm. After that, a light-transmissive epoxy resin is injected into the concave portion 7 of the resin stem 10 (the side surface of which is a reflecting surface), and is kept at about 120 ° C. for about 8 hours to be thermally cured to form the sealing body 5. Yes (Fig. 12
reference). Thereafter, the protrusion 9 made of the same material as the sealing body 5 is formed on the resin stem 10 by any of the methods described above. After that, the lead portion protruding from the resin portion 10A is exterior-treated with solder or Ag. Then, the lead frame is cut and molded, and the lead frame is molded into a predetermined shape.
1, 22 are formed to complete the semiconductor light emitting device (see FIG.
reference).

The semiconductor light emitting device 1 emits light not only from the upper surface but also from the four side surfaces. Therefore, in order to improve the reflectance of the four-sided reflection plate (that is, the reflection surface of the concave portion 7), highly reflective TiO ₂ or the like is used as the filler as described above. FIG. 13 shows changes in reflectance (%) with respect to the content of TiO ₂ (Wt%). Here, it can be seen that the reflectance tends to be saturated when the content of TiO ₂ (titanium oxide) is 10% or more. On the other hand, TiO
₂ is expensive, and resin molding tends to be difficult with a high content (30% or more). Therefore, 1% of TiO ₂
By controlling the content to 0 to 15% and using the rest as a filler such as SiO ₂ (silica) or Al ₂ O ₃ (alumina), an inexpensive resin stem having a high reflectance can be formed. .

On the other hand, in general, since the thermosetting resin and the thermoplastic resin have no chemical bond, the adhesiveness is poor, and the tendency becomes more remarkable when a temperature change is applied. As a countermeasure,
After forming a resin stem by injection molding a thermoplastic resin, the surface thereof is irradiated with ultraviolet rays. After that, by injecting a thermosetting resin such as epoxy resin and heating,
FIG. 14 shows that the adhesion is improved. The adhesive strength (N / cm ² ) increases and the peeling mode generation amount (%) decreases in accordance with the increase of the ultraviolet ray irradiation amount (mJ / cm ² ), and the effect of the ultraviolet ray irradiation is clear.

The reason for this is that by irradiating with ultraviolet rays, C—C ′ and C—H bonds on the surface of the resin stem are separated to form dangling bonds (unbonded hands), after which a thermosetting resin is injected and heated. It is considered that, when cured, the dangling bond of the thermoplastic resin contributes to the chemical bond with the thermosetting resin. As a result, the adhesion force between the two can be increased about twice. Conventionally, it has a low Tg that is well compatible with thermoplastic resins to improve adhesion.
Although the thermosetting resin of No. 1 was used, the margin for moisture resistance was small and the margin for reliability was also small as a result. On the other hand, according to the present embodiment, it is possible to employ a thermosetting resin having a high moisture resistance and a high margin and a high Tg, and the margin for reliability is significantly improved.

Next, still another embodiment of the present invention will be described with reference to FIGS. In this example,
As the semiconductor light emitting element, for example, a blue light emitting element or an ultraviolet light emitting element made of a GaN-based material or the like is used. FIG. 15 is a sectional view of the semiconductor light emitting device of this embodiment, and FIG. 16 is a plan view thereof.
FIG. 15 is a sectional view of a portion along the line A ′.

In the semiconductor light emitting device illustrated in the figure, an n-side electrode and a p-side electrode are formed on the upper surface of the semiconductor light emitting element 1 ', and each is connected to the leads 21 and 22 by the bonding wire 4. An insulating substrate (for example, a sapphire substrate) is normally exposed on the back surface of the light emitting element 1 '. Therefore, even if the light emitting element 1 is mounted on either of the leads 21 and 22, no electrical short circuit occurs. In the illustrated example, the semiconductor light emitting device 1 ′ is mounted in a state where each side is inclined by about 45 degrees with respect to the longitudinal direction of the leads 21 and 22. But,
The present invention is not limited to this. For example, in addition to this, it may be mounted at an angle other than 45 degrees, or may be mounted without being tilted as illustrated in FIG.

In the illustrated embodiment, the light emitting element 1 '
A first electrode and a second electrode are formed on the upper surface of, and the wire 4 is connected to each electrode. Therefore, the concave portion of the resin portion 10A has a shape extending in the connecting direction of the respective wires 4. That is, it is configured such that the bonding area of each wire 4 is secured and the distance between the light emitting element 1 and the reflecting surface 8 becomes smaller in the other directions. With this structure, the light emitting device 1 '
The reflecting surface 8 can effectively act on the light emitted from the side surface of, and can be extracted to the outside with high efficiency.

Here, unlike the illustrated example, when the light emitting device 1 has a structure having a p-side electrode or an n-side electrode on the back surface as in the above embodiment, the light emitting device 1
The mounts and connections of can be configured as described above.
As such an example, for example, a SiC-based material or ZnS
The case where a light emitting element of an e-based material or a BN-based material is used can be given. That is, in these cases,
Since an n-type semiconductor substrate is used, wiring is performed as illustrated in FIG.

In this embodiment, by further adding a phosphor, it is possible to realize a semiconductor light emitting device having a novel structure in which the light emitted from the semiconductor light emitting element 1'is converted into a different wavelength and taken out to the outside. For example, the resin portion 10A
By mixing an appropriate phosphor at the time of molding, the light from the light emitting element 1 ′ incident on the reflecting surface 8 of the resin stem is wavelength-converted, and the light of different wavelengths is passed through the encapsulating body 5 and the lens 9 of the light emitting device. It is taken out.

The types of phosphors used in this embodiment include YAG: Ce type phosphors (yellow emission) excited by blue wavelengths and Y ₂ O ₂ excited by ultraviolet rays.
S: Eu (red emission), (Sr, Ca, Ba, Eu) ₁₀
(PO ₄ ) ₆ · Cl ₂ (blue emission), 3 (Ba, Mg,
Eu, Mn) O.8Al ₂ O ₃ (green light emission) and the like.

When the YAG: Ce phosphor and the blue light emitting element are combined, white light emission can be obtained by mixing yellow light emission from the phosphor and blue light emission from the light emitting element. It is also possible to obtain white light emission by mixing ultraviolet-excited red, green, and blue light emitting phosphors in an appropriate ratio.

Examples of the light emitting element used in the present invention include a blue light emitting element made of a GaN-based material or ultraviolet light emission as described above. Of course SiC-based materials and ZnS
A light emitting element made of an e-based material or a BN-based material may be used.

The phosphor is the surface of the resin portion 10A (reflection surface 8).
The same effect can be obtained by applying to.
In this case, particularly when the stem 10 is mixed with an appropriate amount of a substance that well reflects ultraviolet rays to blue light, such as titanium oxide or zinc oxide, a part of the light from the light emitting element that has passed through the phosphor coating layer is reflected on the reflecting surface 8. Since the light is reflected at a high reflectance by and the wavelength is converted again by the phosphor coating layer, it is possible to realize a semiconductor light emitting device having both high wavelength conversion efficiency and high light extraction efficiency.

The adhesive 3 for mounting the light emitting element 1
Even if the phosphor is mixed with (Ag paste or the like), the same effect as described above can be obtained. That is, when the light emitted from the back surface of the element 1 or toward the back surface is incident on the adhesive 3 containing a phosphor, the wavelength is converted, and the light having a different wavelength is extracted to the outside of the light emitting device through the sealing body 5 and the lens 9. .

The same effect can be obtained by mixing the above-mentioned phosphor in the sealing body 5. Fig. 17 shows a flow chart of the process (Fig. 17 (3 ")). A predetermined phosphor is mixed in advance with an encapsulant material (silicone resin, epoxy resin, etc.) in an appropriate mixing ratio, and thermosetting is performed. As a result, the sealing body 5 containing the phosphor can be formed.
In this case, if the sealing body 5 is cured in advance before forming the lens 9, the phosphor mixed in the sealing body 5 does not diffuse toward the lens when the lens is molded and only inside the sealing body 5. Can be included. When curing and molding the sealing body 5,
If the particle size of the phosphor and the viscosity of the sealing resin before curing are adjusted, the phosphor will precipitate after the resin is injected, and the sealing member 5
It is also possible to localize it on the surface side of or the mounting surface side of the light emitting element 1 '. By precipitating, the phosphor layer is formed into a high-density thin film, and by optimizing the thickness of the thin film layer, it is possible to optimize the wavelength conversion efficiency and the light extraction efficiency.

Almost all the light emitted from the light emitting element 1'is incident on the phosphor-containing sealing body 5, so that the resin portion 10A
The wavelength conversion can be performed more efficiently than the case where it is contained in the adhesive agent 3. Similarly, the same effect can be obtained even if the lens 9 contains the above phosphor. Similar to the case of the sealing body, the lens 9 containing the phosphor can be formed by previously mixing a predetermined phosphor in a lens material (epoxy resin or the like) at an appropriate mixing ratio and thermosetting.

Alternatively, before injecting and molding the sealing body 5,
The phosphor may be applied (coated) on the surface of the light emitting element 1 ′, or another solvent or dispersion medium mixed with the phosphor may be pre-dipped so as to surround the light emitting element 1. In this case, the phosphor may be applied to the light emitting element 1'before mounting the light emitting element 1 ', or the phosphor may be applied to the surface of the light emitting element 1'after mounting.

FIG. 17 shows a flow chart of this process (see FIG. 17).
(1 ') or (3')). When applying the phosphor,
The wavelength conversion efficiency and the light extraction efficiency can be optimized by adjusting the coating film thickness.

Next, still another embodiment of the present invention will be described with reference to FIGS. In this example,
A so-called flip chip type element is used as the semiconductor light emitting element. FIG. 18 is a cross-sectional view of the semiconductor light emitting device of this embodiment, FIG. 19 is a plan view thereof, and FIG. 18 is a cross-sectional view of a portion along the line AA ′ of this figure.

In the semiconductor light emitting device illustrated in the figure, the semiconductor light emitting element 1 ″ has an n-side electrode and a p-side electrode formed on the lower surface thereof and is directly connected to the leads 21 and 22. The light emitted from 1 ″ is extracted to the outside through the protrusion 9. In this embodiment, a wire for connecting the semiconductor light emitting device 1 ″ and the leads 21 and 22 is not necessary, and therefore it is not necessary to secure a bonding region around the light emitting device 1 ″. As a result, it is possible to minimize the distance from the reflecting surface 8 in any direction around the light emitting element 1 ″, that is, for the light emitted from any side surface of the light emitting element 1 ″. Also, the reflecting surface 8 can be effectively acted upon to be taken out to the outside with extremely high efficiency.

Here, the light emitting element 1 "is, for example, Ga
P, GaAlAs, GaAsP, InGaAlP, Ga
A semiconductor light emitting element made of N or the like can be used. Particularly, in the case of a light emitting device using a GaN-based material, a SiC-based material, a ZnSe-based material, or a BN-based material,
As described above with reference to FIGS. 15 to 17, whether a predetermined phosphor is mixed in the resin portion 10A of the resin stem 10, is applied on the inner wall surface of the recess of the resin portion 10A, or is mixed in the sealing body 5. , By being mixed in the lens 9 or by being appropriately applied to the surface of the semiconductor light emitting device 1 ″,
It is also possible to convert the wavelength and take it out.

In each of the embodiments described above, a method for manufacturing a single semiconductor light emitting device has been described, but in reality, as shown in FIGS. 20 and 21, a plurality of semiconductor light emitting devices can be manufactured simultaneously. That is, the lead frame 2 (see FIG.
The resin portion 10A is attached to each of the lead pairs 21 and 22 of 0), and the protruding portion of the light-transmissive resin is made to be a resin by associating a case die string in which a plurality of sealing case die 11 is connected. It can be mass-produced by forming it on the stem (FIG. 21). The width of the lead frame used in the above-described embodiment (the total length of the pair of leads and the frame portion facing each other) is about 55 mm.
If the case die string and the lead frame are sufficiently aligned, the protrusion can be accurately attached to the resin stem 10.

[0068]

The present invention is carried out in the form as described above and has the following effects. That is, the present invention remarkably enhances the adhesiveness between the protruding portion of the light transmissive thermosetting resin and the resin stem of the thermoplastic resin by the above configuration. As a result, the reliability of the semiconductor light emitting device is significantly improved.

Further, according to the present invention, the distance between the light emitting element and the reflecting surface of the resin stem is reduced in the other direction while securing the bonding area of the wire connected to the light emitting element. . With this configuration, the reflection surface can effectively act on the light emitted from the side surface of the light emitting element, and the light can be extracted to the outside with high efficiency.

Further, according to the present invention, a resin stem having a high reflectance and a low cost can be provided by making the material of the resin portion of the resin stem have a unique composition.
Further, the present invention can be applied to various applications by the variation of the lead forming shape. Furthermore, by changing the case type for sealing, it is possible to line up a semiconductor light emitting device having various optical characteristics.

On the other hand, according to the present invention, a predetermined phosphor is mixed in the resin portion of the resin stem, applied on the inner wall surface of the recess of the resin portion, mixed in the sealing body, or mixed in the lens. The light emitted from the light emitting element can be wavelength-converted and extracted to the outside by applying the light emitting element or applying it to the surface of the semiconductor light emitting element. As a result, for example, it is possible to easily obtain light having a plurality of wavelengths such as red, green, or other intermediate colors by using a light emitting element for blue or ultraviolet rays, which greatly expands the application range of the semiconductor light emitting device. can do.

As described above, according to the present invention, there is provided a semiconductor light emitting device having a high light extraction efficiency, high reliability, a wide emission wavelength range and an extremely wide application range, and a manufacturing method thereof. It will be possible to do so, and the industrial advantages will be great.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a semiconductor light emitting device of the present invention (A- in FIG. 2).
(Part along the A'line).

FIG. 2 is a plan view of a semiconductor light emitting device of the present invention.

FIG. 3 is a conceptual plan view of a resin stem of the present invention.

FIG. 4 is a sectional view of a portion taken along the line A-A ′ in FIG.

FIG. 5 is a flowchart of a manufacturing process of the semiconductor light emitting device of the present invention.

FIG. 6 is a sectional view of a sealing case mold and a resin stem of the present invention.

7A and 7B are a sectional view and a plan view of a sealing case mold of the present invention.

FIG. 8 is a sectional view and a plan view of a resin stem of the present invention.

9A and 9B are a plan view and a cross-sectional view of a semiconductor light emitting device of the present invention.

FIG. 10 is a cross-sectional view of a sealing case mold and a resin stem of the present invention.

FIG. 11 is a cross-sectional view of a sealing case mold and a resin stem of the present invention.

FIG. 12 is a sectional view of the resin stem of the present invention.

FIG. 13 is a characteristic diagram showing changes in reflectance according to the composition ratio of titanium oxide of the present invention.

FIG. 14 is a characteristic diagram showing a change in adhesive force due to ultraviolet irradiation of the present invention.

FIG. 15 is a cross-sectional view of the semiconductor light emitting device of the present invention (portion taken along the line AA ′ in FIG. 16).

FIG. 16 is a plan view of a semiconductor light emitting device of the present invention.

FIG. 17 is a flowchart of manufacturing steps of the semiconductor light emitting device of the present invention.

FIG. 18 is a cross-sectional view of the semiconductor light emitting device of the present invention (portion taken along the line AA ′ in FIG. 19).

FIG. 19 is a plan view of a semiconductor light emitting device of the present invention.

FIG. 20 is a plan view of a lead frame used in the present invention.

FIG. 21 is a cross-sectional view of a case type ream of the present invention and a series of resin stems.

FIG. 22 is a sectional view of a conventional semiconductor light emitting device.

FIG. 23 is a plan view of a conventional resin stem.

FIG. 24 is a cross-sectional view of a portion taken along the line A-A ′ in FIG. 23.

[Explanation of symbols]

1, 1 ', 1 "Semiconductor light emitting element 2 Lead frame 3 Ag paste 4 Bonding wire (Au wire) 5 Light-transmissive resin sealing body (silicon resin, epoxy resin) 7 Recessed portion of resin stem 8 Reflective surface 9 Light transmission Of resinous resin (lens) 10 Resin stem 10A Resin part 11 Sealing case mold 12 Flowing resin 13 Projection parts 14, 15 Through holes 21, 22 Lead

─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Yutaka Nagasawa 1-10-1 Shimonitsutsu, Ogurakita-ku, Kitakyushu-shi, Fukuoka Inside Toshiba Kitakyushu factory (72) Inventor Tadashi Umechi 1 Shimototsu, Kokurakita-ku, Kitakyushu, Fukuoka −10− 1 Toshiba Kitakyushu Factory (72) Inventor Satoshi Kawamoto 72 Horikawa-cho, Saiwai-ku, Kawasaki-shi, Kanagawa Toshiba Corporation Kawasaki Works (56) Reference JP-A-3-11771 (JP, A) Kaihei 3-119769 (JP, A) JP 4-329680 (JP, A) JP 5-55636 (JP, A) JP 5-226698 (JP, A) JP 5-347435 ( JP, A) JP 7-22653 (JP, A) JP 7-99345 (JP, A) JP 7-106634 (JP, A) JP 8-45972 (JP, A) JP 49-71886 (JP, A) JP 62-4380 ( JP, A) Actual flat 4-109556 (JP, U) Actual flat 5-63068 (JP, U) Actual flat 6-29159 (JP, U) Actual flat 6-72263 (JP, U) US patent 4152624 (US, A) US patent 5043716 (US, A) US patent 5266817 (US, A) West German patent application publication 4340864 (DE, A1) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 33/00 H01L 21/56 H01L 23/28

Claims (30)

(57) [Claims] 1. A resin stem having a semiconductor light emitting device, a first lead, a second lead, and a resin portion provided so as to cover a part of the first lead, the first lead. And one end of the second lead are respectively led out from the resin portion, and the resin portion is electrically connected to the semiconductor light emitting element and the first electrode of the semiconductor light emitting element. A resin stem having a recess for accommodating the other end of the first lead and the other end of the second lead electrically connected to the second electrode of the semiconductor light emitting element; A light-transmissive resin filled in the recess, and a protrusion made of a light-transmissive resin that covers the entire upper surface of the resin stem and the entire upper side surface extending from the upper surface to a predetermined distance. The bottom surface of the part is It not in contact with the de-semiconductor light emitting device characterized by having a predetermined interval. 2. The semiconductor light emitting device according to claim 1, wherein the light transmissive resin filled in the recess of the resin stem is a silicon resin. 3. The semiconductor light emitting device according to claim 2, wherein the silicon resin is filled with a phosphor. 4. The semiconductor light emitting device according to claim 2, wherein the semiconductor light emitting element is made of a GaN-based material. 5. The resin stem has at least one through hole at the bottom of the recess.
The semiconductor light-emitting device described. 6. The semiconductor light emitting device according to claim 1, wherein the resin stem has at least one through hole extending from an upper surface to a lower surface thereof. 7. The protruding portion constitutes a lens, a vertical centerline of the protruding portion and a vertical centerline of the resin stem coincide with each other, and a vertical centerline of the semiconductor light emitting element is: 7. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is configured so as to match these center lines. 8. The semiconductor light emitting device according to claim 1, further comprising a phosphor that converts light emitted from the semiconductor light emitting element into light of different wavelengths. 9. The semiconductor light emitting device according to claim 8, wherein the phosphor is contained in the resin portion of the resin stem. 10. The semiconductor light emitting device according to claim 8, wherein the phosphor is applied on an inner wall surface of the recess of the resin stem. 11. The semiconductor light emitting device according to claim 8, wherein the phosphor is contained in a mounting adhesive applied to the back surface of the semiconductor light emitting element. 12. The semiconductor light emitting device according to claim 8, wherein the phosphor is contained in the light transmissive resin with which the recess is filled. 13. The semiconductor light emitting device according to claim 8, wherein the phosphor is contained in the light transmissive resin forming the protrusion. 14. The cross-sectional shape of the recess of the resin stem in the horizontal direction is such that the diameter of the lead-out direction of the first and second leads is larger than the diameter of the direction perpendicular to this direction. The semiconductor light emitting device according to any one of 1 to 13. 15. A first electrode of the semiconductor light emitting device is connected to the first lead by a bonding wire, and a second electrode of the semiconductor light emitting device is connected to the second lead by a bonding wire. 15. The semiconductor light emitting device according to claim 14, wherein: 16. The semiconductor light emitting device according to claim 14, wherein a center of a horizontal cross-sectional shape of the recess of the resin stem is displaced from a center of a horizontal cross-sectional shape of the resin stem. 17. A second electrode of the semiconductor light emitting device is connected to the second lead by a bonding wire, and a center of a horizontal cross-sectional shape of the recess of the resin stem is a horizontal cross section of the resin stem. 17. The semiconductor light emitting device according to claim 16, wherein the semiconductor light emitting device is deviated from the center of the shape in the lead-out direction of the second lead. 18. The semiconductor light emitting device according to claim 1, wherein a side surface of the inner wall of the recess constitutes a reflecting surface. 19. The resin portion of the resin stem comprises a thermoplastic resin of 65 wt% or more and a filler of 35 wt% or less, and the filler is titanium oxide, silicon oxide, aluminum oxide or the like. 19. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is made of a highly reflective material, and the content of the titanium oxide is 10 to 15% by weight. 20. A resin in which a lead frame having first and second leads and a resin portion are integrally molded, and the tips of the leads are arranged to face each other in a recess formed in the upper surface of the resin portion. Forming a stem; mounting a semiconductor light emitting device having first and second electrodes in the recess, electrically connecting the first lead and the first electrode, and A step of electrically connecting the lead and the second electrode; a step of injecting a fluid resin of a thermosetting resin into a sealing case mold; an upper surface of the resin stem and an upper side surface extending from the upper surface And a step of curing the fluid resin to form a protrusion made of a light-transmissive resin on the resin stem, the protrusion being formed in the sealing case mold. Is the entire top surface of this resin stem And so as to cover the entire upper side surface extending from the upper surface to a predetermined distance, and the bottom surface of the protrusion is not in contact with the first and second leads and has a predetermined distance. A method of manufacturing a semiconductor light emitting device, which comprises forming the semiconductor light emitting device. 21. A resin in which a lead frame having first and second leads and a resin portion are integrally molded, and the tips of the leads are arranged to face each other in a recess formed in the upper surface of the resin portion. Forming a stem; mounting a semiconductor light emitting device having first and second electrodes in the recess, electrically connecting the first lead and the first electrode, and A step of electrically connecting the lead and the second electrode; and a first flowable resin of thermosetting resin so as to cover the semiconductor light emitting element and the tips of the first and second leads. A step of injecting into the recess, a step of injecting a second fluid resin of thermosetting resin into the encapsulating case mold, and a step of injecting the first fluid resin in the recess of the resin stem into the encapsulating case mold Butt against the surface of the second fluid resin of The resin stem is placed in the second case in the sealing case mold.
And a step of soaking the first and second fluid resins to form a light-transmissive resin encapsulant in the recesses, and projecting portions of the light-transmissive resin on the resin stem. And a step of forming a semiconductor light emitting device, wherein the protrusion is formed so as to cover the entire upper surface of the resin stem and the entire upper side surface extending from the upper surface to a predetermined distance. . 22. The second portion of the resin stem in the encapsulating case die, with an upper surface of the concave portion opened downward.
22. The method for manufacturing a semiconductor light emitting device according to claim 20 or 21, wherein the method is soaked in the fluid resin. 23. The semiconductor light emitting device according to claim 20, wherein the resin stem is dipped until the lead frame comes into contact with the opening end of the sealing case mold. Device manufacturing method. 24. A stopper portion is provided at an opening end portion of the sealing case mold, and the resin stem is crushed until the lead frame comes into contact with the stopper portion. A method for manufacturing a semiconductor light emitting device according to item 1. 25. The semiconductor light emitting device according to claim 23, wherein the resin stem is provided with a stopper portion, and the resin stem is crushed until the lead frame contacts the stopper portion. Production method. 26. The semiconductor light emitting device according to claim 20, wherein the lead frame has a plurality of lead pairs formed of the first and second leads. Device manufacturing method. 27. The encapsulating case die comprises a case die row in which a plurality of case die rows are arranged in a row.
27. The method for manufacturing a semiconductor light emitting device according to claim 26. 28. The resin stem is formed for each lead pair of the lead frame, and each of the resin stems is dipped in a corresponding sealing case die of the case die row. 28. A method of manufacturing a semiconductor light emitting device according to claim 26 or 27. 29. The method for manufacturing a semiconductor light emitting device according to claim 20, wherein the first fluid resin and the second fluid resin are made of different resin materials. . 30. The semiconductor light emission according to claim 20, wherein the resin stem is irradiated with ultraviolet rays before the fluid resin is filled in the recess of the resin stem. Device manufacturing method.