JP2001196644A - Optical semiconductor device and manufacturing method thereof - Google Patents
Optical semiconductor device and manufacturing method thereofInfo
- Publication number
- JP2001196644A JP2001196644A JP2000006021A JP2000006021A JP2001196644A JP 2001196644 A JP2001196644 A JP 2001196644A JP 2000006021 A JP2000006021 A JP 2000006021A JP 2000006021 A JP2000006021 A JP 2000006021A JP 2001196644 A JP2001196644 A JP 2001196644A
- Authority
- JP
- Japan
- Prior art keywords
- optical semiconductor
- semiconductor device
- resin
- package
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H10W72/5522—
-
- H10W90/724—
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Led Device Packages (AREA)
- Light Receiving Elements (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Led Devices (AREA)
Abstract
(57)【要約】
【課題】 光半導体装置に係り、特に信頼性が高く、光
学特性に優れた凸形状の透光性封止部を有する光半導体
装置及びその製造方法を提供する。
【解決手段】 パッケージ凹部内に配された光半導体素
子３と、該光半導体素子３を外部と電気的に接続させる
リード電極２と、前記光半導体素子を封止する透光性樹
脂６と、前記パッケージの発光観測面側表面の少なくと
も一部に設けられた前記透光性樹脂の濡れ性を低減させ
るコート層５とを有する光半導体装置であって、前記透
光性樹脂６は、光半導体素子上に設けられた凸レンズ形
状部６１と、前記コート層５と接しコート層に沿って濡
れ広がった周縁部６２からなる光半導体装置。また、そ
の製造方法は前記パッケージの発光観測面側表面の少な
くとも一部にコート層５を形成する工程と、前記コート
層５にプラズマ照射または紫外線照射による表面処理を
行う工程と、前記パッケージ凹部内に透光性樹脂を注入
して、凸レンズ形状部６１およびコート層に沿って濡れ
広がった周縁部６２を形成させた後、硬化させる工程と
を具備する。
The present invention relates to an optical semiconductor device, and more particularly, to an optical semiconductor device having a convex-shaped translucent sealing portion having high reliability and excellent optical characteristics, and a method for manufacturing the same. SOLUTION: An optical semiconductor element 3 arranged in a package concave portion, a lead electrode 2 for electrically connecting the optical semiconductor element 3 to the outside, a translucent resin 6 for sealing the optical semiconductor element, An optical semiconductor device comprising: a coating layer provided on at least a part of a surface on a light emission observation surface side of the package for reducing wettability of the light-transmitting resin; An optical semiconductor device comprising: a convex lens-shaped portion 61 provided on an element; and a peripheral portion 62 in contact with the coating layer 5 and wetted and spread along the coating layer. Further, the manufacturing method includes a step of forming a coating layer 5 on at least a part of a surface of the package on a light emission observation side, a step of performing a surface treatment on the coating layer 5 by plasma irradiation or ultraviolet irradiation, To form a convex lens-shaped portion 61 and a peripheral edge portion 62 that spreads wet along the coat layer, and then cures.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、パッケージ内に配
置した光半導体素子を樹脂で封止してなる光半導体装置
に係り、特に、高性能で信頼性の高い光半導体装置に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device in which an optical semiconductor element arranged in a package is sealed with a resin, and more particularly to an optical semiconductor device having high performance and high reliability.
【０００２】[0002]
【従来の技術】今日、低消費電力で高輝度に発光し、小
型、且つ軽量な発光素子や受光素子として、種々の分野
で光半導体素子を利用した光半導体装置が利用されてい
る。このような光半導体装置の一例として、表面実装型
ＬＥＤについて説明する。表面実装型ＬＥＤでは、発光
素子を配置するための凹部を有する液晶ポリマー等から
なるパッケージが用いられる。そのパッケージには発光
素子の電極と接続するためのリード電極が設けられてお
り、リード電極はパッケージ凹部の底面で露出され、パ
ッケージ内に配置された発光素子の電極と金線によるワ
イヤボンディングや銀ペーストなどの電気的接合部材を
用いて電気的に接続されている。また、発光素子、リー
ド電極や金線などを外部から保護する目的で、パッケー
ジ凹部内に配置された発光素子は透光性樹脂により封止
されている。2. Description of the Related Art Today, optical semiconductor devices using optical semiconductor elements are used in various fields as small and lightweight light-emitting elements and light-receiving elements which emit light with low power consumption and high luminance. As an example of such an optical semiconductor device, a surface mount LED will be described. In the surface mount type LED, a package made of a liquid crystal polymer or the like having a concave portion for disposing a light emitting element is used. The package is provided with lead electrodes for connection to the electrodes of the light emitting element. The lead electrodes are exposed at the bottom of the package concave portion, and are bonded to the electrodes of the light emitting element arranged in the package by wire bonding using a gold wire or silver. They are electrically connected using an electrical joining member such as a paste. The light emitting element disposed in the package recess is sealed with a light-transmitting resin for the purpose of protecting the light emitting element, the lead electrode, the gold wire, and the like from the outside.
【０００３】光半導体素子を配置したパッケージ凹部を
透光性樹脂で封止する際において、凹部内に注入した透
光性樹脂が硬化時に収縮して表面が凹状にへこんだ形状
となり発光輝度が低下するという問題を解決するため、
該透光性樹脂をはじくコート層をパッケージ上面に設け
ることにより、透光性樹脂注入時に熱硬化時の収縮分を
見込んで余分に透光性樹脂を注入しても、透光性樹脂が
パッケージ外部に流出するのを防止する方法が考えられ
る。[0003] When a package concave portion in which an optical semiconductor element is arranged is sealed with a light-transmitting resin, the light-transmitting resin injected into the concave portion contracts upon curing to form a concave shape on the surface, resulting in reduced light emission luminance. To solve the problem of
By providing a coat layer for repelling the light-transmitting resin on the upper surface of the package, even if the light-transmitting resin is additionally injected in anticipation of the amount of shrinkage caused by thermosetting when the light-transmitting resin is injected, the light-transmitting resin remains There is a method to prevent it from flowing out.
【０００４】また、前記パッケージ凹部の側面を発光観
測面側に向かって開口するように傾斜した光反射面と
し、更に透光性樹脂の外表面を凸形状に形成することに
より、透光性樹脂表面は凸レンズ効果を発現して、光の
集光性を高め、すなわち発光素子では光取り出し効率の
向上、受光素子では受光効率の向上を実現できることは
公知である。Further, by forming the side surface of the concave portion of the package as a light reflecting surface inclined so as to open toward the light emission observing surface side, and further forming the outer surface of the translucent resin in a convex shape, the translucent resin is formed. It is known that the surface exhibits a convex lens effect to enhance the light condensing property, that is, the light emitting element can improve the light extraction efficiency and the light receiving element can improve the light receiving efficiency.
【０００５】従って、上記両者の技術を組み合わせれ
ば、透光性樹脂を凹部容積以上に供給することにより、
キャスティングケース（型）等を使用せずに表面が凸レ
ンズ形状の透光性樹脂を有する光学特性の優れた光半導
体装置を簡単に作製することが出来る。[0005] Therefore, if the above two techniques are combined, by supplying the translucent resin to the concave volume or more,
It is possible to easily manufacture an optical semiconductor device having excellent optical properties and having a light-transmitting resin having a convex lens surface without using a casting case (mold) or the like.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上記両
者の技術を組み合わせて作製された光半導体装置には次
のような問題がある。図４に作製された光半導体装置
（表面実装型ＬＥＤ）の断面図を示す。このように、コ
ート層内周は凹部開口部外周と略同一であり、透光性樹
脂はコート層内周端面にもはじかれているため、透光性
樹脂が硬化収縮すると、透光性樹脂とコート層内周端面
との間に切り欠き溝状部ができる。図５はこの切り欠き
溝状部、すなわち図４中Ｂ部を拡大して示した図であ
る。この切り欠き溝状部１０７の底部には透光性樹脂１
０６とパッケージ１０１の接触部がある。すると、透光
性樹脂１０６に熱応力が加わった場合、該切り欠き溝状
部底部は応力が集中し易い形状になっており、この切り
欠き溝状部底部を起点に透光性樹脂が割れる、或いは透
光性樹脂１０６とパッケージ凹部側面が剥離するという
信頼性の問題があった。However, the optical semiconductor device manufactured by combining the above two techniques has the following problems. FIG. 4 shows a cross-sectional view of the manufactured optical semiconductor device (surface mounted LED). As described above, the inner periphery of the coat layer is substantially the same as the outer periphery of the opening of the concave portion, and the translucent resin is also repelled by the inner peripheral end surface of the coat layer. A notch groove-shaped portion is formed between the coating layer and the inner peripheral end face. FIG. 5 is an enlarged view of the notched groove portion, that is, the portion B in FIG. The transparent resin 1 is provided at the bottom of the cutout groove 107.
06 and the package 101. Then, when thermal stress is applied to the translucent resin 106, the bottom of the notch groove portion has a shape in which stress is easily concentrated, and the translucent resin is cracked starting from the bottom portion of the notch groove portion. Alternatively, there has been a reliability problem that the translucent resin 106 and the side surface of the concave portion of the package are separated.
【０００７】従って、本願発明はこれら問題点を解決す
るために成されたものであり、その目的は、信頼性が高
く、光学特性に優れた凸形状の透光性封止部を有する光
半導体装置を提供することにある。Accordingly, the present invention has been made to solve these problems, and an object of the present invention is to provide an optical semiconductor having a convex-shaped translucent sealing portion having high reliability and excellent optical characteristics. It is to provide a device.
【０００８】[0008]
【課題を解決するための手段】すなわち、本発明に係る
光半導体装置は、パッケージ凹部内に配された光半導体
素子３と、該光半導体素子３を外部と電気的に接続させ
るリード電極２と、前記光半導体素子を封止する透光性
樹脂６と、前記パッケージの発光観測面側表面の少なく
とも一部に設けられた前記透光性樹脂の濡れ性を低減さ
せるコート層５とを有する光半導体装置であって、前記
透光性樹脂６は、光半導体素子上に設けられた凸レンズ
形状部６１と、前記コート層５と接しコート層に沿って
濡れ広がった周縁部６２からなる。このように構成する
ことにより、本発明に係る光半導体装置は、パッケージ
凹部に透光性樹脂を充填する際に、透光性樹脂はパッケ
ージ上面に設けられたコート層によって濡れ性が低減し
広がりを規制されるため、透光性樹脂の表面張力により
外表面を凸形状にできる。さらに、このコート層は透光
性樹脂の濡れ性を低減させるが、完全に弾くわけではな
いので、透光性樹脂はコート層と接しコート層に沿って
濡れ広がった周縁部を形成した状態で硬化させることが
できる。すなわち、本発明に係る光半導体装置では、封
止樹脂の外表面を凸形状とすることで、集光レンズ作用
が付与され、且つ封止樹脂の表面を凸形状とするのに型
を使わないため優れた生産性を有する。さらに透光性樹
脂が濡れ広がった周縁部を有するため、問題となってい
た切り欠き部の発生を防止することができ、熱応力によ
る切り欠き部を起点とした封止樹脂の割れおよび剥離の
ない高信頼性な光半導体装置が得られる。That is, an optical semiconductor device according to the present invention comprises an optical semiconductor element 3 disposed in a package recess and a lead electrode 2 for electrically connecting the optical semiconductor element 3 to the outside. A light having a light-transmitting resin 6 for encapsulating the optical semiconductor element, and a coat layer 5 provided on at least a part of the light-emitting observation surface side surface of the package for reducing wettability of the light-transmitting resin. In the semiconductor device, the translucent resin 6 includes a convex lens-shaped portion 61 provided on the optical semiconductor element, and a peripheral portion 62 which is in contact with the coat layer 5 and spreads along the coat layer. With this configuration, in the optical semiconductor device according to the present invention, when the translucent resin is filled in the package recesses, the translucent resin is reduced in wettability and spread by the coat layer provided on the package upper surface. Is regulated, the outer surface can be made convex by the surface tension of the translucent resin. Further, although this coat layer reduces the wettability of the light-transmitting resin, it does not completely repel, so that the light-transmitting resin is in contact with the coat layer and forms a peripheral portion that spreads wet along the coat layer. Can be cured. That is, in the optical semiconductor device according to the present invention, by forming the outer surface of the sealing resin into a convex shape, a condensing lens function is provided, and a mold is not used to make the surface of the sealing resin a convex shape. It has excellent productivity. Furthermore, since the translucent resin has a perimeter portion that spreads wet, it is possible to prevent the occurrence of the notch, which has been a problem, and to prevent cracking and peeling of the sealing resin from the notch due to thermal stress. A highly reliable optical semiconductor device can be obtained.
【０００９】また、本発明に係る光半導体装置では、前
記周縁部６２とコート層５の接触角θが４５°以下であ
ることが好ましい。このような接触角θが４５°以下の
濡れ広がった周縁部を形成することで、確実に前記切り
欠き部の発生を防止することができる。In the optical semiconductor device according to the present invention, it is preferable that the contact angle θ between the peripheral portion 62 and the coating layer 5 is 45 ° or less. By forming such a peripheral portion having a contact angle θ of 45 ° or less, the notch can be reliably prevented from being generated.
【００１０】また、本発明に係る光半導体装置では、前
記コート層の膜厚を５０〜１０００ｎｍにすることで、
容易にコート層の透光性樹脂に対する濡れ低減作用を制
御することができ、信頼性の高い光半導体装置を得るこ
とができる。Further, in the optical semiconductor device according to the present invention, by setting the thickness of the coat layer to 50 to 1000 nm,
The effect of reducing the wetting of the coat layer with the translucent resin can be easily controlled, and a highly reliable optical semiconductor device can be obtained.
【００１１】また、本発明に係る光半導体装置では、前
記コート層を、フッ素系樹脂またはシリコーン系樹脂を
用いて形成することができる。Further, in the optical semiconductor device according to the present invention, the coat layer can be formed using a fluorine-based resin or a silicone-based resin.
【００１２】また、本発明に係る光半導体装置は、前記
パッケージ凹部の側面が発光観測面側に向かって広がる
ように傾斜され、且つ光反射性を有した面であることが
好ましい。このようにすると、発光装置では発光素子か
らの光を効率よく集光して外部に放出し、受光装置では
外部からの光を効率よく集光して受光素子に供給するよ
う働くので、更に光学特性を向上させることができる。Further, in the optical semiconductor device according to the present invention, it is preferable that the side surface of the package recess is a surface which is inclined so as to expand toward the light emission observing surface side and has light reflectivity. In this way, the light-emitting device efficiently condenses the light from the light-emitting element and emits the light to the outside, and the light-receiving device efficiently condenses the light from the outside and supplies the light to the light-receiving element. The characteristics can be improved.
【００１３】また、本発明に係る光半導体装置は、前記
発光素子がフリップチップ実装されていることが好まし
い。このようにすると、凹部にワイヤーを張るためのス
ペースが不要となり、小型かつ薄型で、高性能かつ高信
頼性の光半導体素子が得られる。また、ワイヤーがない
分封止樹脂を充填する際封止樹脂を供給、吐出するノズ
ルを凹部底深くまで下げて、封止樹脂を充填することが
出来、充填時吐出圧で封止樹脂がパッケージ凹部外に勢
いよく過剰にあふれ出る現象も発生しにくくなる。Further, in the optical semiconductor device according to the present invention, it is preferable that the light emitting element is flip-chip mounted. This eliminates the need for a space for attaching a wire to the concave portion, and provides a small, thin, high-performance and highly reliable optical semiconductor device. In addition, when filling the sealing resin for the absence of the wire, the sealing resin can be supplied and discharged by lowering the nozzle deep down to the bottom of the recess so that the sealing resin can be filled. The phenomenon of excessively overflowing outside hardly occurs.
【００１４】また、本発明に係る光半導体装置では、前
記透光性樹脂を、シリコーン樹脂、エポキシ樹脂、変性
アクリル樹脂及び不飽和ポリエステル樹脂からなる群よ
り選択される１つを用いて形成することができる。In the optical semiconductor device according to the present invention, the translucent resin is formed using one selected from the group consisting of a silicone resin, an epoxy resin, a modified acrylic resin, and an unsaturated polyester resin. Can be.
【００１５】また、本発明に係る光半導体装置では、前
記パッケージを、液晶ポリマー樹脂、ＰＢＴ（ポリブチ
レンテレフタレート）樹脂、セラミックス及びガラス−
エポキシ積層板からなる群より選択される１つを用いて
形成することができる。Further, in the optical semiconductor device according to the present invention, the package is made of a liquid crystal polymer resin, a PBT (polybutylene terephthalate) resin, a ceramic and a glass.
It can be formed using one selected from the group consisting of epoxy laminates.
【００１６】本発明に係る光半導体装置の製造方法は、
パッケージ凹部内に配された光半導体素子３と、該光半
導体素子３を外部と電気的に接続させるリード電極２
と、前記光半導体素子を封止する透光性樹脂６と、前記
パッケージの発光観測面側表面の少なくとも一部に設け
られた前記透光性樹脂の濡れ性を低減させるコート層５
とを有する光半導体装置を製造する方法であって、前記
パッケージの発光観測面側表面の少なくとも一部にコー
ト層５を形成する工程と、前記コート層５にプラズマ照
射または紫外線照射による表面処理を行う工程と、前記
パッケージ凹部内に透光性樹脂を注入して、凸レンズ形
状部６１およびコート層５に沿って濡れ広がった周縁部
６２を形成させた後、硬化させる工程とを具備するもの
である。コート層に前記表面処理を行うことにより、容
易にコート層の透光性樹脂に対する濡れ低減作用を制御
することができ、信頼性の高い光半導体装置を製造する
ことができる。A method for manufacturing an optical semiconductor device according to the present invention comprises:
An optical semiconductor device 3 disposed in a package recess, and a lead electrode 2 for electrically connecting the optical semiconductor device 3 to the outside.
A light-transmitting resin 6 for sealing the optical semiconductor element, and a coat layer 5 provided on at least a part of the light-emitting observation surface side surface of the package for reducing wettability of the light-transmitting resin.
And a step of forming a coat layer 5 on at least a part of the light emission observation surface side surface of the package, and performing a surface treatment by plasma irradiation or ultraviolet irradiation on the coat layer 5. And a step of injecting a light-transmitting resin into the concave portion of the package so as to form a convex lens-shaped portion 61 and a peripheral portion 62 which spreads along the coating layer 5 and then cures the same. is there. By performing the surface treatment on the coat layer, the effect of reducing the wetting of the coat layer with the translucent resin can be easily controlled, and a highly reliable optical semiconductor device can be manufactured.
【００１７】また、本発明に係る光半導体装置の製造方
法は、前記周縁部６２と前記コート層５の接触角θが４
５度以下となるように前記表面処理を行うことが好まし
い。Further, in the method for manufacturing an optical semiconductor device according to the present invention, the contact angle θ between the peripheral portion 62 and the coat layer 5 is 4
It is preferable to perform the surface treatment so as to be 5 degrees or less.
【００１８】また、本発明に係る光半導体装置の製造方
法は、前記コート層をフッ素系樹脂またはシリコーン系
樹脂からなる材料で形成することが好ましい。In the method for manufacturing an optical semiconductor device according to the present invention, it is preferable that the coat layer is formed of a material made of a fluorine-based resin or a silicone-based resin.
【００１９】[0019]
【発明の実施の形態】以下、図面を参照して本発明に係
る実施の形態の光半導体装置（表面実装型ＬＥＤ）につ
いて説明する。本実施の形態の光半導体装置は、図１及
び図２に示すように、リード電極が施されたパッケージ
の発光部を除く発光観測面側上面には、透光性樹脂６の
濡れ性を低減させるコート層が形成されている。このコ
ート層の作用により、パッケージ凹部に充填された透光
性樹脂６は、凸レンズ形状部６１と、前記コート層５と
接しコート層に沿って濡れ広がった周縁部６２を形成し
た状態で硬化させることができる。これによって、本実
施の形態の光半導体装置は、光学特性、および信頼性の
向上を実現できる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an optical semiconductor device (surface mounted LED) according to an embodiment of the present invention will be described with reference to the drawings. As shown in FIGS. 1 and 2, the optical semiconductor device of the present embodiment reduces the wettability of the translucent resin 6 on the upper surface of the package on which the lead electrode is provided except for the light-emitting section. A coat layer to be formed is formed. By the action of this coat layer, the translucent resin 6 filled in the package recesses is cured in a state in which the convex lens-shaped portion 61 and the peripheral edge portion 62 that is in contact with the coat layer 5 and spreads wet along the coat layer are formed. be able to. As a result, the optical semiconductor device of the present embodiment can achieve improved optical characteristics and reliability.
【００２０】以下、図１、図２を用いて本実施の形態の
光半導体装置（表面実装型ＬＥＤ）について詳細に説明
する。尚、図１は本実施の形態の表面実装型ＬＥＤの断
面図であり、図２は図１中Ａ部を拡大して示した図であ
る。Hereinafter, an optical semiconductor device (surface-mount type LED) according to the present embodiment will be described in detail with reference to FIGS. FIG. 1 is a cross-sectional view of a surface-mounted LED according to the present embodiment, and FIG. 2 is an enlarged view of a portion A in FIG.
【００２１】（パッケージ１）パッケージ１は、発光素
子３を凹部内に固定保護するとともに外部との電気的接
続が可能なリード電極２を有するものである。したがっ
て、光半導体素子の数や大きさに合わせて複数の開口部
を持ったパッケージとすることもできる。パッケージ１
は発光素子３と外部とを電気的に遮断させるために絶縁
性を有することが望まれる。さらに、パッケージ１は、
発光素子３などからの熱の影響をうけた場合、透光性樹
脂６との密着性を考慮して熱膨張率の小さいものが好ま
しい。パッケージの材料として具体的には、液晶ポリマ
ー樹脂、ＰＢＴ（ポリブチレンテレフタレート）樹脂、
セラミックス、ガラス−エポキシ積層板等の絶縁性部材
が好ましく用いられる。(Package 1) The package 1 has a lead electrode 2 which fixes and protects the light emitting element 3 in the recess and can be electrically connected to the outside. Therefore, a package having a plurality of openings can be provided according to the number and size of the optical semiconductor elements. Package 1
It is desired that the element has an insulating property to electrically shut off the light emitting element 3 from the outside. In addition, package 1
When affected by heat from the light emitting element 3 or the like, a material having a small coefficient of thermal expansion is preferable in consideration of adhesion to the translucent resin 6. Specific examples of the package material include a liquid crystal polymer resin, a PBT (polybutylene terephthalate) resin,
Insulating members such as ceramics and glass-epoxy laminates are preferably used.
【００２２】また、パッケージ凹部の側面は、発光観測
面側に向かって広がるように傾斜させた。このようにし
て形成された凹部の側面は、発光素子３からの光を効率
よく集光して外部に放出し、或いは外部からの光を効率
よく集光して受光素子に供給するよう働く。さらに、パ
ッケージ表面、特にパッケージ凹部の表面を白色或いは
銀白色に着色することにより、光の反射率を向上させる
ことが好ましい。また、パッケージ１にはリード電極２
が一体的に係止され、リード電極２はパッケージ凹部内
の少なくとも一部に露出するように形成される。リード
電極２は銅、リン青銅等の延性に優れた電気良導体金属
板を用いて構成することができる。また、光の反射率を
向上させるために、リード電極の表面に銀、銀−パラジ
ウム、金等の光反射率の高いメッキ処理を施すことが好
ましい。このように、パッケージ凹部の側面を発光観測
面側に向かって広がるように傾斜させ、且つリード電極
２の表面にメッキ処理を施したり、パッケージ１を着色
することで、更に効果的に光半導体装置の光学特性を向
上させることができる。Further, the side surface of the package concave portion is inclined so as to spread toward the light emission observation surface side. The side surface of the recess formed in this manner functions to efficiently condense light from the light emitting element 3 and emit it to the outside, or to efficiently condense light from the outside and supply it to the light receiving element. Further, it is preferable to improve the light reflectance by coloring the surface of the package, particularly the surface of the package concave portion, in white or silver white. The package 1 has lead electrodes 2
Are integrally locked, and the lead electrode 2 is formed so as to be exposed at least partially in the package concave portion. The lead electrode 2 can be formed using an electrically conductive metal plate having excellent ductility, such as copper or phosphor bronze. In addition, in order to improve the light reflectance, it is preferable that the surface of the lead electrode be subjected to a plating treatment with a high light reflectance such as silver, silver-palladium, or gold. As described above, the optical semiconductor device can be more effectively formed by inclining the side surface of the package concave portion so as to widen toward the light emission observing surface side, and plating the surface of the lead electrode 2 or coloring the package 1. Can be improved in optical characteristics.
【００２３】（光半導体素子３）光半導体素子３として
は発光素子、受光素子のみならず種々の半導体素子を用
いることができ、液相成長法やＭＯＣＶＤ法等により基
板上にＩｎＮ、ＡｌＮ、ＧａＮ、ＺｎＳ、ＺｎＳｅ、Ｓ
ｉＣ、ＧａＰ、ＧａＡｓ、ＧａＡｌＡｓ、ＧａＡｌＮ、
ＡｌＩｎＧａＰ、ＩｎＧａＮ、ＡｌＩｎＧａＮ等の半導
体を発光層として形成させたものが好適に用いられる。
半導体の構造としては、ＭＩＳ接合、ＰＩＮ接合やＰＮ
接合を有したホモ構造、ヘテロ構造あるいはダブルへテ
ロ構造のものが挙げられる。半導体層の材料やその混晶
度によって発光波長を紫外光から赤外光まで種々選択す
ることができる。さらに、量子効果を持たせるため発光
層を単一量子井戸構造、多重量子井戸構造とさせても良
い。こうしてできた半導体に真空蒸着法や熱、光、放電
エネルギーなどを利用した各種ＣＶＤ法などを用いて所
望の電極が形成される。発光素子の電極は、半導体の一
方の側に設けてもよいし、両面側にそれぞれ設けてもよ
いが、本発明の実施の形態においては、図に示すように
光半導体素子は一方の面に正電極４１と負電極４２が形
成されており、それぞれの電極はパッケージ１に一体的
に係止されたリード電極２に対向させた、いわゆるフリ
ップチップ実装形態にて搭載され、半田等の導電性部材
を用いて接続されるとともに、パッケージに固定されて
いる。(Optical semiconductor element 3) As the optical semiconductor element 3, not only a light emitting element and a light receiving element but also various semiconductor elements can be used. InN, AlN, GaN and the like are formed on a substrate by a liquid phase growth method, a MOCVD method or the like. , ZnS, ZnSe, S
iC, GaP, GaAs, GaAlAs, GaAlN,
A light emitting layer formed of a semiconductor such as AlInGaP, InGaN, or AlInGaN is preferably used.
Semiconductor structures include MIS junction, PIN junction, and PN
Examples thereof include those having a homo structure, a hetero structure, and a double hetero structure having a junction. The emission wavelength can be variously selected from ultraviolet light to infrared light depending on the material of the semiconductor layer and the degree of mixed crystal thereof. Further, the light emitting layer may have a single quantum well structure or a multiple quantum well structure in order to have a quantum effect. A desired electrode is formed on the semiconductor thus formed by using a vacuum evaporation method, various CVD methods utilizing heat, light, discharge energy, or the like. The electrode of the light emitting element may be provided on one side of the semiconductor or may be provided on both sides, respectively.In the embodiment of the present invention, the optical semiconductor element is provided on one side as shown in the drawing. A positive electrode 41 and a negative electrode 42 are formed, and each electrode is mounted in a so-called flip-chip mounting form facing the lead electrode 2 integrally locked to the package 1 and is made of a conductive material such as solder. They are connected using members and fixed to the package.
【００２４】（コート層５）コート層５は、凸形状の外
表面を有する透光性樹脂６を容易に形成するために、パ
ッケージ１の上面に設けられる。コート層５は、透光性
封止樹脂の濡れ性を低減させる作用を有するものでなけ
ればならない。(Coat Layer 5) The coat layer 5 is provided on the upper surface of the package 1 in order to easily form the translucent resin 6 having a convex outer surface. The coat layer 5 must have the function of reducing the wettability of the translucent sealing resin.
【００２５】液体が固体に濡れていく濡れ性は、液体に
相接する３つの相（液層、気相、固相）の表面もしくは
界面張力が関係しており、その平衡状態は次の式で表す
ことができる。 γSV＝γSL＋γLVCOSθ ここで、γSV、γSL、γLVはそれぞれ気体−固体、固体
−液体、液体−気体界面における表面もしくは界面張力
である。接触角θは、図３に示すように、液体の表面と
固体表面との交点Ｐにおいて液体の接線と固体表面との
なす角である。この接触角θによって、濡れ性を定義す
ることができる。すなわち、接触角θが小さいほど濡れ
性が良く、θ＝０°では固体が液体と一体となるが如く
完全に濡れ、θが０°〜９０°では部分的に濡れ、θが
９０°よりも大きい場合は濡れにくいという。The wettability of a liquid to a solid is related to the surface or interfacial tension of three phases (a liquid layer, a gas phase, and a solid phase) in contact with the liquid. Can be represented by γ SV = γ SL + γ LV COSθ where γ SV , γ SL , and γ LV are the surface or interfacial tension at the gas-solid, solid-liquid, and liquid-gas interfaces, respectively. As shown in FIG. 3, the contact angle θ is the angle between the tangent of the liquid and the solid surface at the intersection P between the surface of the liquid and the solid surface. The wettability can be defined by the contact angle θ. That is, the smaller the contact angle θ is, the better the wettability is. At θ = 0 °, the solid is completely wet as if the solid is integrated with the liquid. When θ is 0 ° to 90 °, the solid is partially wet, and θ is larger than 90 °. If it is large, it is difficult to get wet.
【００２６】本発明において、透光性樹脂の濡れ性を低
減させる作用とは、透光性樹脂６を完全にはじくもので
なく、透光性樹脂６がコート層５に沿って濡れ広がった
周縁部６２を形成可能な程度に濡れ性を低減させるもの
である。この周縁部６２は、透光性樹脂とコート層の接
触角θが４５°以下となるように調整することで、確実
に形成することができる。In the present invention, the action of reducing the wettability of the light-transmitting resin does not mean that the light-transmitting resin 6 is completely repelled. The wettability is reduced to such an extent that the portion 62 can be formed. The peripheral portion 62 can be reliably formed by adjusting the contact angle θ between the translucent resin and the coat layer to be 45 ° or less.
【００２７】本発明の実施の形態（図１、図２）では、
透光性樹脂との接触角θが１５°であるコート層が形成
されている。このコート層の作用と透光性樹脂の表面張
力により、パッケージ凹部に充填された透光性樹脂６
は、凸レンズ形状部６１と、前記コート層５と接しコー
ト層に沿って濡れ広がった周縁部６２を形成した状態で
硬化させることができる。図２において、凸レンズ形状
部６１と周縁部６２のなす角度をθ２、周縁部６２とコ
ート層のなす角度をθ１で表した時、コート層と透光性
樹脂の接触角θが４５°以下では、θ２＜θ１となり目
的とする周縁部が形成され、切り欠き溝状部の発生を確
実に防止できる。しかし、接触角θが４５°より大きい
場合は、透光性樹脂の表面張力が過大であるため、切り
欠き溝状部の発生を防止できるような濡れ広がった周縁
部を形成することができない。In the embodiment of the present invention (FIGS. 1 and 2),
A coat layer having a contact angle θ with the translucent resin of 15 ° is formed. Due to the action of this coat layer and the surface tension of the translucent resin, the translucent resin 6
Can be cured in a state in which a convex lens-shaped portion 61 and a peripheral portion 62 which is in contact with the coat layer 5 and spreads wet along the coat layer are formed. In FIG. 2, when the angle between the convex lens-shaped portion 61 and the peripheral portion 62 is represented by θ2 and the angle between the peripheral portion 62 and the coat layer is represented by θ1, when the contact angle θ between the coat layer and the translucent resin is 45 ° or less, , Θ2 <θ1, the target peripheral edge portion is formed, and the occurrence of the notched groove portion can be reliably prevented. However, when the contact angle θ is larger than 45 °, the surface tension of the translucent resin is excessive, so that it is not possible to form a wet-spreading peripheral portion that can prevent the generation of the notched groove portion.
【００２８】この際、(1)コート層の膜厚を５０ｎｍ〜
１０００ｎｍ程度の薄膜状にする、(2)コーティング剤
に溶媒を混入して、溶媒乾燥後にコート層が粗い網目状
構造となるように調整する、等の方法により、使用する
透光性樹脂の濡れ性に応じて、コート層の濡れ性低減作
用を調整することができる。At this time, (1) the film thickness of the coating layer is
Wetting the translucent resin to be used by, for example, forming a thin film of about 1000 nm, (2) mixing a solvent into the coating agent, and adjusting the coating layer to have a coarse network structure after drying the solvent. The effect of reducing the wettability of the coat layer can be adjusted according to the properties.
【００２９】前記コート層５は、パッケージ上面にマス
ク等でコーティングをする部分だけを露出させ、コーテ
ィングしない部分は被覆した、いわゆるマスキング状態
にて、コーティング剤を塗布、噴霧、スピンコートある
いはＣＶＤ蒸着を行うことで形成できる。このようにし
て、容易に所望の形状のコート層を形成することができ
る。コーティング剤として、具体的には、フッ素系樹
脂、シリコーン系樹脂等を使用することができる。The coating layer 5 is formed by applying a coating agent, spraying, spin coating or CVD deposition in a so-called masking state in which only the portion to be coated with a mask or the like is exposed on the upper surface of the package, and the uncoated portion is covered. It can be formed by performing. Thus, a coat layer having a desired shape can be easily formed. Specifically, a fluorine-based resin, a silicone-based resin, or the like can be used as the coating agent.
【００３０】また、本発明の光半導体装置の製造方法に
おいて、コート層形成後、該コート層にプラズマ照射ま
たは紫外線照射による表面処理を行い、コート層を弱く
分解することで、コート層の濡れ性低減作用を調整する
こともできる。In the method of manufacturing an optical semiconductor device according to the present invention, after the coating layer is formed, the coating layer is subjected to a surface treatment by plasma irradiation or ultraviolet irradiation, and the coating layer is weakly decomposed, whereby the wettability of the coating layer is reduced. The reduction effect can also be adjusted.
【００３１】前記プラズマ照射は、アルゴン、空気、酸
素、窒素、一酸化炭素、二酸化炭素などやこれらの混合
ガスなどの雰囲気下で行うことが好ましい。例えば、真
空度１０Ｐａ、ＲＦ入力電力１００Ｗとし、ガスとして
アルゴンガスを用いた場合、そのガスの流量は１０リッ
トル／minで行う。照射時間はコート層の材料や使用す
る透光性樹脂によって異なるが、１〜３分程度が好まし
い。なぜならば、あまり長時間プラズマ照射を行うと、
コート層の部分的な消失やパッケージ材表面の劣化（マ
イクロクラック発生や変色等）が起こるからである。こ
こで、プラズマ照射の条件はこれだけに限定されるもの
ではない。The plasma irradiation is preferably performed in an atmosphere such as argon, air, oxygen, nitrogen, carbon monoxide, carbon dioxide, or a mixed gas thereof. For example, when the degree of vacuum is 10 Pa, RF input power is 100 W, and argon gas is used as the gas, the flow rate of the gas is 10 liter / min. The irradiation time varies depending on the material of the coat layer and the translucent resin used, but is preferably about 1 to 3 minutes. Because, if plasma irradiation is performed for too long,
This is because partial disappearance of the coat layer and deterioration of the package material surface (such as generation of microcracks and discoloration) occur. Here, the conditions for plasma irradiation are not limited to these.
【００３２】前記紫外線照射には、公知の紫外線照射装
置を使用することができ、紫外線の光源としては、高圧
水銀ランプ、低圧水銀ランプ、メタルハライドランプ、
クセノンランプなどを使用することができる。例えば、
低圧水銀ランプ（波長２５４ｎｍ）を光源とした場合、
２０ｍＷ／cm2の放射強度で行う。照射時間は、コート
層の材料や使用する透光性樹脂によって異なるが、あま
り長時間紫外線照射を行うと上記プラズマ照射同様、コ
ート層の部分的な消失やパッケージ材表面の劣化が起こ
るため、２〜５分程度が好ましい。ここで、紫外線照射
の条件はこれだけに限定されるものではない。For the ultraviolet irradiation, a known ultraviolet irradiation device can be used. As a light source of the ultraviolet light, a high-pressure mercury lamp, a low-pressure mercury lamp, a metal halide lamp,
A xenon lamp or the like can be used. For example,
When a low-pressure mercury lamp (wavelength 254 nm) is used as a light source,
It is performed at a radiation intensity of 20 mW / cm 2 . The irradiation time varies depending on the material of the coat layer and the translucent resin to be used. However, if the ultraviolet irradiation is performed for an excessively long time, similar to the plasma irradiation, partial disappearance of the coat layer and deterioration of the surface of the package material occur. About 5 minutes is preferable. Here, the conditions for ultraviolet irradiation are not limited to these.
【００３３】（透光性樹脂６）透光性樹脂６は、発光素
子３を外部力、塵芥や水分などから保護するとともに、
封止部の外表面を凸レンズ形状とすることで、集光性を
高め外部への出力効率を向上させる機能を有する。尚、
発光素子の電極とリード電極とをワイヤーを用いて電気
的に接続する構造においては、ワイヤーを保護する機能
も有する。透光性樹脂６は、絶縁性且つ透光性の各種樹
脂を用いて形成され、具体的にはエポキシ、シリコー
ン、変性アクリル、不飽和ポリエステル等の透光性樹脂
が好適に用いられる。外表面が凸レンズ形状を有する透
光性樹脂６は、前述したコート層５をパッケージ上面に
形成することで以下のようにして容易に作製できる。ま
ず、上述したように、使用する透光性樹脂との濡れ性を
調整したコート層５をパッケージ上面に形成する。次
に、パッケージ凹部に粘度を所定の値に設定した透光性
樹脂を、透光性樹脂の一部がパッケージ上面にはみ出す
ように所定量注入する。この透光性樹脂の量、粘度、表
面張力の大きさにより凸形状の制御が可能である。する
と、透光性樹脂はコート層５により広がりを制御され、
透光性樹脂の表面張力により凸レンズ形状の外表面が形
成される。さらにこの時、透光性樹脂は硬化に至るまで
に濡れ性が向上するため、コート層に沿って濡れ広がっ
た周縁部も形成され、このような形状で加熱あるいは紫
外線照射等その樹脂に適した状態にて硬化される。硬化
にともない透光性樹脂は収縮するが、透光性樹脂６の周
縁部６２はコート層５の表面と密着しているため、切り
欠き溝状部は発生せず、その周縁部の厚みが若干硬化収
縮に相応した量分減少するのみである。(Translucent Resin 6) The translucent resin 6 protects the light emitting element 3 from external force, dust, moisture, etc.
By forming the outer surface of the sealing portion in the shape of a convex lens, it has a function of improving the light collecting property and improving the output efficiency to the outside. still,
In a structure in which the electrode of the light emitting element is electrically connected to the lead electrode using a wire, the electrode also has a function of protecting the wire. The translucent resin 6 is formed using various insulating and translucent resins, and specifically, translucent resins such as epoxy, silicone, modified acryl, and unsaturated polyester are preferably used. The translucent resin 6 whose outer surface has the shape of a convex lens can be easily produced by forming the above-described coat layer 5 on the upper surface of the package as follows. First, as described above, the coat layer 5 having adjusted wettability with the translucent resin to be used is formed on the upper surface of the package. Next, a predetermined amount of a light-transmitting resin whose viscosity is set to a predetermined value is injected into the package concave portion such that a part of the light-transmitting resin protrudes from the upper surface of the package. The convex shape can be controlled by the amount, viscosity and surface tension of the light-transmitting resin. Then, the spread of the translucent resin is controlled by the coat layer 5, and
The outer surface of the convex lens shape is formed by the surface tension of the translucent resin. Further, at this time, since the translucent resin has improved wettability before curing, a peripheral portion that spreads wet along the coat layer is also formed, and such a shape is suitable for the resin such as heating or ultraviolet irradiation. It is cured in the state. Although the translucent resin shrinks with the curing, the peripheral portion 62 of the translucent resin 6 is in close contact with the surface of the coat layer 5, so that notched groove-shaped portions are not generated, and the thickness of the peripheral portion is reduced. It is only slightly reduced by an amount corresponding to the curing shrinkage.
【００３４】以上のように、本実施の形態では、パッケ
ージ上面に透光性樹脂の濡れ性を低減させるコート層５
が形成されているため、型を使うことなく外表面が凸形
状を有する透光性樹脂６を形成することができる。ま
た、コート層５は透光性樹脂の濡れ性を低減させるが、
完全に弾くわけではないので、透光性樹脂は周縁部６２
が前記コート層５の表面に密着した状態で硬化し、問題
となっていた切り欠き溝状部の発生を防止することがで
きる。As described above, in the present embodiment, the coat layer 5 for reducing the wettability of the translucent resin is formed on the upper surface of the package.
Is formed, it is possible to form the translucent resin 6 having a convex outer surface without using a mold. Further, the coat layer 5 reduces the wettability of the translucent resin,
Since it does not play completely, the translucent resin is
Is hardened in a state of being in close contact with the surface of the coat layer 5, and the occurrence of the problematic notch groove-shaped portion can be prevented.
【００３５】また、本実施の形態では、光半導体素子の
実装形態をフリップチップ実装した例を示したが、本発
明において光半導体素子の実装はフリップチップ実装に
限られるものでなく、ワイヤーボンディングで光半導体
素子とリード電極を接続する実装方法を用いても、同様
に信頼性の高く、光学特性の優れた光半導体装置が得ら
れるという同様の効果を有することは言うまでもない。In this embodiment, an example in which the optical semiconductor element is mounted by flip-chip mounting is shown. However, in the present invention, the mounting of the optical semiconductor element is not limited to flip-chip mounting. It is needless to say that even when the mounting method for connecting the optical semiconductor element and the lead electrode is used, the same effect that a highly reliable optical semiconductor device having excellent optical characteristics can be obtained is obtained.
【００３６】またさらに、実施の形態では、パッケージ
１個に対して１個の光半導体素子を搭載するものとした
が、本発明は複数個の光半導体素子をパッケージ凹部に
搭載したものにも適用することができ、このようにして
も、実施の形態と同様の効果が得られる。Further, in the embodiment, one optical semiconductor element is mounted on one package. However, the present invention is also applicable to a case in which a plurality of optical semiconductor elements are mounted in a package recess. In this case, the same effect as that of the embodiment can be obtained.
【００３７】[0037]
【実施例】以下、本発明に係る実施例の光半導体装置及
びその製造方法について説明する。 ［実施例１］実施例１は、第１の実施の形態（図１、図
２）と同様の構成を持った光半導体装置の例である。予
め、パッケージ１に配置されるリード電極２を打ち抜き
加工により形成する。次に、液晶ポリマー樹脂を射出成
型器ホッパに入れ加熱溶融させながら、形成されたリー
ド電極２を配置させた金型内に注入し、射出成形を利用
してパッケージ１を形成する。形成されたパッケージ１
の凹部を除く発光観測面側表面に、シリコーン系樹脂よ
りなるコーティング剤を塗布し、膜厚１００ｎｍのコー
ト層５を形成する。この時、コーティング剤は、シリコ
ーン系樹脂：溶剤の重量比が５：１００となるように混
合し調整する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An optical semiconductor device according to an embodiment of the present invention and a method for manufacturing the same will be described below. [Example 1] Example 1 is an example of an optical semiconductor device having a configuration similar to that of the first embodiment (FIGS. 1 and 2). The lead electrode 2 arranged on the package 1 is formed in advance by punching. Next, the liquid crystal polymer resin is put into an injection molding machine hopper, heated and melted, and is injected into a mold in which the formed lead electrodes 2 are arranged, and the package 1 is formed by injection molding. Package 1 formed
A coating agent made of a silicone resin is applied to the surface on the light emission observation surface side excluding the concave portion to form a coat layer 5 having a thickness of 100 nm. At this time, the coating agent is mixed and adjusted so that the weight ratio of silicone resin: solvent is 5: 100.
【００３８】次に、前記構成のパッケージ凹部のリード
電極２上にはんだを用いて発光素子３をフリップチップ
実装する。続いて、パッケージ凹部内に透光性エポキシ
樹脂を注入し、熱硬化させる。すると透光性樹脂は、図
のように凸レンズ形状部６１とコート層に沿って濡れ広
がった周縁部６２とを有していた。Next, the light emitting element 3 is flip-chip mounted on the lead electrode 2 in the package recess having the above-mentioned structure by using solder. Subsequently, a translucent epoxy resin is injected into the concave portion of the package and thermally cured. As a result, the translucent resin had a convex lens-shaped portion 61 and a peripheral portion 62 wet and spread along the coat layer as shown in the figure.
【００３９】［比較例１］比較例１は、従来例（図４）
と同様の構成を持った光半導体装置の例である。実施例
１と同様にして形成されたパッケージ１０１の凹部を除
く発光観測面側表面に、フッ素系樹脂よりなるコーティ
ング剤を塗布し、膜厚２μｍのコート層１０５を形成す
る。この時、コーティング剤は、フッ素系樹脂：溶剤の
重量比が３０：１００となるように混合し調整する。Comparative Example 1 Comparative Example 1 is a conventional example (FIG. 4)
21 is an example of an optical semiconductor device having the same configuration as that of FIG. A coating agent made of a fluororesin is applied to the surface of the package 101 formed in the same manner as in Example 1 except for the concave portion except for the concave portion, to form a coat layer 105 having a thickness of 2 μm. At this time, the coating agent is mixed and adjusted so that the weight ratio of the fluororesin: solvent is 30: 100.
【００４０】次に、前記構成のパッケージ凹部のリード
電極上にはんだを用いて発光素子１０３をフリップチッ
プ実装する。続いて、パッケージ凹部内に透光性シリコ
ーン樹脂を注入し、熱硬化させ、外表面が凸形状を有す
る透光性樹脂１０６を形成した。形成された透光性樹脂
１０６は、図のように透光性樹脂とコート層内周端面と
の間に切り欠き溝状部１０７を有していた。Next, the light emitting element 103 is flip-chip mounted on the lead electrode in the package recess having the above-mentioned structure by using solder. Subsequently, a light-transmitting silicone resin was injected into the concave portion of the package, and was thermally cured to form a light-transmitting resin 106 having a convex outer surface. The formed translucent resin 106 had a cut-out groove portion 107 between the translucent resin and the inner peripheral end face of the coat layer as shown in the figure.
【００４１】［実施例２］コート層を形成後、低圧水銀
ランプ（波長：２５４ｎｍ、エネルギー強度 ：２０Ｗ
／cm2 )で２分間紫外線を照射してコート層の表面処理
を行う以外は、比較例１と同様にして光半導体装置を作
製する。すると透光性樹脂は、実施例１と同様に凸レン
ズ形状部６１とコート層に沿って濡れ広がった周縁部６
２とを有していた。Example 2 After forming a coat layer, a low-pressure mercury lamp (wavelength: 254 nm, energy intensity: 20 W)
/ Cm 2 ), and an optical semiconductor device is manufactured in the same manner as in Comparative Example 1, except that the surface treatment of the coat layer is performed by irradiating ultraviolet rays for 2 minutes. Then, as in the first embodiment, the translucent resin wets and spreads the convex lens-shaped portion 61 and the peripheral portion 6 along the coat layer.
And 2.
【００４２】［実施例３］コート層を形成後、アルゴン
ガス雰囲気下でプラズマ照射してコート層の表面処理を
行う以外は、比較例１と同様にして光半導体装置を作製
する。この時、照射条件は真空度１０Ｐａ、ＲＦ入力電
力１００Ｗ、アルゴンガス流量１０リットル／minで２
分間行った。すると透光性樹脂は、実施例１と同様に凸
レンズ形状部６１とコート層に沿って濡れ広がった周縁
部６２とを有していた。Example 3 An optical semiconductor device is manufactured in the same manner as in Comparative Example 1, except that the surface of the coat layer is subjected to plasma irradiation in an argon gas atmosphere after forming the coat layer. At this time, the irradiation conditions were as follows: vacuum degree 10 Pa, RF input power 100 W, argon gas flow rate 10 liter / min.
Minutes. Then, as in Example 1, the translucent resin had a convex lens-shaped portion 61 and a peripheral portion 62 that spread and wet along the coat layer.
【００４３】以上のように実施例１〜３及び比較例１で
作製された光半導体装置各々１００個について、−４０
℃、１５分間放置したものを１００℃、１５分間放置す
ることを１サイクルとする気相熱衝撃試験を３００サイ
クル実施したところ、比較例１で得られた装置では透光
性樹脂とパッケージの剥離が７３個の素子に発生し、１
個の素子に透光性樹脂の割れが観察されたが、本発明に
係る実施例１〜３で得られた装置には、剥離、割れとも
観察されなかった。As described above, for each of the 100 optical semiconductor devices manufactured in Examples 1 to 3 and Comparative Example 1, -40
A gas-phase thermal shock test was performed for 300 cycles in which one cycle of standing at 15 ° C. for 15 minutes was performed at 100 ° C. for 15 minutes. In the apparatus obtained in Comparative Example 1, the light-transmitting resin was separated from the package. Occurs in 73 elements, and 1
Cracks in the translucent resin were observed in the individual elements, but neither peeling nor cracking was observed in the devices obtained in Examples 1 to 3 according to the present invention.
【００４４】[0044]
【発明の効果】以上説明したように、本発明に係る光半
導体装置は、パッケージの発光観測面側表面の少なくと
も一部に、前記透光性樹脂の濡れ性を低減させるコート
層が形成されており、透光性樹脂は光半導体素子上に設
けられた凸レンズ形状部と、前記コート層と接しコート
層に沿って濡れ広がった周縁部とを有する。従って、本
発明に係る光半導体装置は、透光性樹脂の外表面を凸形
状とすることで、集光レンズ作用が付与され、且つ透光
性樹脂の表面を凸形状とするのに型を使わないため優れ
た生産性を有する。さらに透光性樹脂が濡れ広がった周
縁部を有するため、問題となっていた切り欠き部の発生
を防止することができ、熱応力による切り欠き部を起点
とした封止樹脂の割れおよび剥離のない高信頼性な光半
導体装置が得られる。As described above, in the optical semiconductor device according to the present invention, the coat layer for reducing the wettability of the translucent resin is formed on at least a part of the surface on the light emission observing surface side of the package. The light-transmitting resin has a convex lens-shaped portion provided on the optical semiconductor element and a peripheral portion in contact with the coat layer and wetted and spread along the coat layer. Therefore, in the optical semiconductor device according to the present invention, by forming the outer surface of the light-transmitting resin into a convex shape, a condensing lens function is provided, and the mold is used to make the surface of the light-transmitting resin convex. It has excellent productivity because it is not used. Furthermore, since the translucent resin has a perimeter portion that spreads wet, it is possible to prevent the occurrence of the notch, which has been a problem, and to prevent cracking and peeling of the sealing resin from the notch due to thermal stress. A highly reliable optical semiconductor device can be obtained.
【００４５】また、本発明に係る光半導体装置におい
て、前記パッケージ凹部の側面が発光観測面側に向かっ
て広がるように傾斜され、且つ光反射性を有した面であ
ることが好ましい。これにより、発光装置では発光素子
からの光を効率よく外部に放出し、受光装置では外部か
らの光を効率よく受光素子に供給するよう働き、更に光
学特性を向上させることができる。In the optical semiconductor device according to the present invention, it is preferable that the side surface of the concave portion of the package is a surface which is inclined so as to widen toward the light emission observation surface side and has light reflectivity. Accordingly, the light emitting device efficiently emits light from the light emitting element to the outside, and the light receiving device functions to efficiently supply the light from the outside to the light receiving element, so that the optical characteristics can be further improved.
【００４６】さらに、本発明に係る光半導体装置は、前
記光半導体素子をフリップチップ実装することにより、
凹部にワイヤーを張るためのスペースが不要となり、小
型かつ薄型で、高性能かつ高信頼性の光半導体素子が得
られる。また、ワイヤーがない分封止樹脂を充填する際
に、透光性樹脂を供給、吐出するノズルを凹部底深くま
で下げて、透光性樹脂を充填することが出来、充填時吐
出圧で透光性樹脂がパッケージ凹部外に勢いよく過剰に
あふれ出る現象も発生しにくくなる。Further, in the optical semiconductor device according to the present invention, the optical semiconductor element is flip-chip mounted,
No space is required for stretching the wire in the concave portion, and a small, thin, high-performance and highly reliable optical semiconductor element can be obtained. In addition, when filling the sealing resin for the absence of wires, the nozzle that supplies and discharges the light-transmitting resin can be lowered to the bottom of the recess to fill the light-transmitting resin. The phenomenon that the conductive resin vigorously and excessively overflows outside the concave portion of the package hardly occurs.
【００４７】また、本発明に係る光半導体装置の製造方
法によれば、パッケージ上面にコート層を形成後、該コ
ート層をプラズマ照射または紫外線照射による表面処理
を行うことにより、容易にコート層の透光性樹脂に対す
る濡れ性低減作用を制御することができ、信頼性の高い
光半導体装置を製造することができる。Further, according to the method of manufacturing an optical semiconductor device of the present invention, after forming a coat layer on the upper surface of a package, the coat layer is subjected to surface treatment by plasma irradiation or ultraviolet irradiation, so that the coat layer can be easily formed. The effect of reducing the wettability of the light-transmitting resin can be controlled, and a highly reliable optical semiconductor device can be manufactured.
【図１】 本発明に係る実施の形態の光半導体装置の断
面図である。FIG. 1 is a sectional view of an optical semiconductor device according to an embodiment of the present invention.
【図２】 図１におけるＡの部分を拡大して示す断面図
である。FIG. 2 is an enlarged sectional view showing a portion A in FIG. 1;
【図３】 濡れ性を説明するための模式図である。FIG. 3 is a schematic diagram for explaining wettability.
【図４】 従来例の光半導体装置の断面図である。FIG. 4 is a sectional view of a conventional optical semiconductor device.
【図５】 図４におけるＢの部分を拡大して示す断面図
である。FIG. 5 is an enlarged sectional view showing a portion B in FIG. 4;
１、１０１・・・パッケージ ２、１０２・・・リード電極 ３、１０３・・・光半導体素子 ４１、１４１・・・正電極 ４２、１４２・・・負電極 ５、１０５・・・コート層 ６、１０６・・・透光性樹脂 ６１・・・凸レンズ形状部 ６２・・・周縁部 １０７・・・切り欠き溝状部 1, 101: Package 2, 102: Lead electrode 3, 103: Optical semiconductor element 41, 141: Positive electrode 42, 142 ... Negative electrode 5, 105: Coating layer 6, 106: translucent resin 61: convex lens-shaped part 62: peripheral part 107: notched groove-shaped part
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 31/02 Ｈ０１Ｌ 31/02 Ｂ 31/0232 Ｄ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 31/02 H01L 31/02 B 31/0232 D
Claims (11)
子（３）と、該光半導体素子（３）を外部と電気的に接
続させるリード電極（２）と、前記光半導体素子を封止
する透光性樹脂（６）と、前記パッケージの発光観測面
側表面の少なくとも一部に設けられた前記透光性樹脂の
濡れ性を低減させるコート層（５）とを有する光半導体
装置であって、 前記透光性樹脂（６）は、光半導体素子上に設けられた
凸レンズ形状部（６１）と、前記コート層（５）と接し
コート層に沿って濡れ広がった周縁部（６２）からなる
ことを特徴とする光半導体装置。1. An optical semiconductor device (3) disposed in a package recess, a lead electrode (2) for electrically connecting the optical semiconductor device (3) to the outside, and sealing the optical semiconductor device. An optical semiconductor device comprising: a light-transmitting resin (6); and a coat layer (5) provided on at least a part of a surface of the package on a light emission observation surface side to reduce wettability of the light-transmitting resin. The translucent resin (6) includes a convex lens-shaped portion (61) provided on the optical semiconductor element and a peripheral portion (62) in contact with the coat layer (5) and wetted and spread along the coat layer. An optical semiconductor device, comprising:
接触角θが４５°以下である請求項１に記載の光半導体
装置。2. The optical semiconductor device according to claim 1, wherein a contact angle θ between the peripheral portion (62) and the coat layer (5) is 45 ° or less.
ｎｍである請求項１または２に記載の光半導体装置。3. The coating layer has a thickness of 50 to 1000.
3. The optical semiconductor device according to claim 1, wherein the optical semiconductor device is nm.
リコーン系樹脂からなる請求項１乃至３の何れか一項に
記載の光半導体装置。4. The optical semiconductor device according to claim 1, wherein said coat layer is made of a fluorine-based resin or a silicone-based resin.
側に向かって広がるように傾斜され、且つ光反射性を有
した面である請求項１乃至４に記載の光半導体装置。5. The optical semiconductor device according to claim 1, wherein the side surface of the concave portion of the package is inclined so as to widen toward a light emission observation surface side and is a surface having light reflectivity.
ている請求項１乃至５に記載の光半導体装置。6. The optical semiconductor device according to claim 1, wherein the light emitting element is mounted by flip chip mounting.
ポキシ樹脂、変性アクリル樹脂及び不飽和ポリエステル
樹脂からなる群より選択される１つからなることを特徴
とする請求項１乃至６のうちの何れか１項に記載の光半
導体装置。7. The light-transmitting resin according to claim 1, wherein the light-transmitting resin comprises one selected from the group consisting of a silicone resin, an epoxy resin, a modified acrylic resin, and an unsaturated polyester resin. The optical semiconductor device according to claim 1.
ＰＢＴ（ポリブチレンテレフタレート）樹脂、セラミッ
クス及びガラス−エポキシ積層板からなる群より選択さ
れる１つからなることを特徴とする請求項１乃至７のう
ちの何れか１項に記載の光半導体装置。8. The package according to claim 1, wherein the package is a liquid crystal polymer resin,
The optical semiconductor device according to any one of claims 1 to 7, wherein the optical semiconductor device comprises one selected from the group consisting of a PBT (polybutylene terephthalate) resin, a ceramic, and a glass-epoxy laminate.
子（３）と、該光半導体素子（３）を外部と電気的に接
続させるリード電極（２）と、前記光半導体素子を封止
する透光性樹脂（６）と、前記パッケージの発光観測面
側表面の少なくとも一部に設けられた前記透光性樹脂の
濡れ性を低減させるコート層（５）とを有する光半導体
装置を製造する方法であって、 前記パッケージの発光観測面側表面の少なくとも一部に
コート層（５）を形成する工程と、 前記コート層（５）にプラズマ照射または紫外線照射に
よる表面処理を行う工程と、 前記パッケージ凹部内に透光性樹脂を注入して、凸レン
ズ形状部（６１）およびコート層に沿って濡れ広がった
周縁部（６２）を形成させた後、硬化させる工程とを具
備することを特徴とする光半導体装置の製造方法。9. An optical semiconductor element (3) disposed in a package recess, a lead electrode (2) for electrically connecting the optical semiconductor element (3) to the outside, and sealing the optical semiconductor element. An optical semiconductor device having a light-transmitting resin (6) and a coat layer (5) provided on at least a part of the surface of the package on the light emission observation surface side to reduce the wettability of the light-transmitting resin is manufactured. A method of forming a coat layer (5) on at least a part of a surface of the package on a light emission observation surface side, a step of performing a surface treatment by plasma irradiation or ultraviolet irradiation on the coat layer (5), Injecting a translucent resin into the concave portion of the package to form a convex lens-shaped portion (61) and a peripheral portion (62) spread and wet along the coat layer, and then curing. Optical semiconductor Device manufacturing method.
（５）との接触角θが４５度以下になるように前記表面
処理を行う請求項９に記載の光半導体装置の製造方法。10. The method of manufacturing an optical semiconductor device according to claim 9, wherein the surface treatment is performed such that a contact angle θ between the peripheral portion (62) and the coat layer (5) is 45 degrees or less.
リコーン系樹脂からなる材料で形成する請求項１０また
は１１に記載の光半導体装置の製造方法。11. The method for manufacturing an optical semiconductor device according to claim 10, wherein the coat layer is formed of a material made of a fluorine-based resin or a silicone-based resin.
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|---|---|---|---|
| JP2000006021A JP2001196644A (en) | 2000-01-11 | 2000-01-11 | Optical semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000006021A JP2001196644A (en) | 2000-01-11 | 2000-01-11 | Optical semiconductor device and manufacturing method thereof |
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|---|---|
| JP2001196644A true JP2001196644A (en) | 2001-07-19 |
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Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003347597A (en) * | 2002-05-29 | 2003-12-05 | Kyocera Corp | Light emitting element mounting substrate |
| JP2005019662A (en) * | 2003-06-26 | 2005-01-20 | Nichia Chem Ind Ltd | Light emitting device |
| JP2005019663A (en) * | 2003-06-26 | 2005-01-20 | Nichia Chem Ind Ltd | Light emitting device and manufacturing method thereof |
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