JP3369244B2 - 薄膜トランジスタ - Google Patents

薄膜トランジスタ

Info

Publication number: JP3369244B2
Authority: JP; Japan
Prior art keywords: region; active region; thin film; metal element; film transistor
Prior art date: 1993-03-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP07899993A

Other languages

English (en)

Japanese (ja)

Other versions

JPH06267980A (ja

Inventor

宏勇張

秀貴魚地

徹高山

保彦竹村

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Semiconductor Energy Laboratory Co Ltd

Original Assignee

Semiconductor Energy Laboratory Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1993-03-12

Filing date

1993-03-12

Publication date

2003-01-20

1993-03-12 Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd

1993-03-12 Priority to JP07899993A priority Critical patent/JP3369244B2/ja

1994-03-08 Priority to US08/207,124 priority patent/US5569936A/en

1994-03-08 Priority to TW083102004A priority patent/TW278219B/zh

1994-03-12 Priority to CNB981163203A priority patent/CN1221018C/zh

1994-03-12 Priority to KR1019940004933A priority patent/KR100197780B1/ko

1994-03-12 Priority to CNB2005100919197A priority patent/CN100437945C/zh

1994-03-12 Priority to CN94102725A priority patent/CN1126179C/zh

1994-09-22 Publication of JPH06267980A publication Critical patent/JPH06267980A/ja

1995-06-06 Priority to US08/467,986 priority patent/US5595923A/en

1998-04-17 Priority to KR1019980013731A priority patent/KR100229055B1/ko

2000-03-08 Priority to JP2000063975A priority patent/JP3369530B2/ja

2003-01-20 Application granted granted Critical

2003-01-20 Publication of JP3369244B2 publication Critical patent/JP3369244B2/ja

2018-01-20 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Landscapes

Thin Film Transistor (AREA)
Recrystallisation Techniques (AREA)

JP07899993A 1993-03-12 1993-03-12 薄膜トランジスタ Expired - Lifetime JP3369244B2 (ja)

Priority Applications (10)

Application Number	Priority Date	Filing Date	Title
JP07899993A JP3369244B2 (ja)	1993-03-12	1993-03-12	薄膜トランジスタ
TW083102004A TW278219B (zh)	1993-03-12	1994-03-08
US08/207,124 US5569936A (en)	1993-03-12	1994-03-08	Semiconductor device employing crystallization catalyst
KR1019940004933A KR100197780B1 (ko)	1993-03-12	1994-03-12	트랜지스터 및 반도체 회로 제조 방법
CNB2005100919197A CN100437945C (zh)	1993-03-12	1994-03-12	晶体管和半导体电路的制造方法
CN94102725A CN1126179C (zh)	1993-03-12	1994-03-12	晶体管和半导体电路
CNB981163203A CN1221018C (zh)	1993-03-12	1994-03-12	晶体管和半导体电路的制造方法
US08/467,986 US5595923A (en)	1993-03-12	1995-06-06	Method of forming a thin film transistor
KR1019980013731A KR100229055B1 (en)	1993-03-12	1998-04-17	Transistor and semiconductor device circuit
JP2000063975A JP3369530B2 (ja)	1993-03-12	2000-03-08	薄膜トランジスタの作製方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP07899993A JP3369244B2 (ja)	1993-03-12	1993-03-12	薄膜トランジスタ

Related Child Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2000063975A Division JP3369530B2 (ja)	1993-03-12	2000-03-08	薄膜トランジスタの作製方法

Publications (2)

Publication Number	Publication Date
JPH06267980A JPH06267980A (ja)	1994-09-22
JP3369244B2 true JP3369244B2 (ja)	2003-01-20

Family

ID=13677596

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP07899993A Expired - Lifetime JP3369244B2 (ja)	1993-03-12	1993-03-12	薄膜トランジスタ

Country Status (2)

Country	Link
JP (1)	JP3369244B2 (zh)
CN (1)	CN100437945C (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3347804B2 (ja) *	1993-03-22	2002-11-20	株式会社半導体エネルギー研究所	半導体回路の作製方法
JP3535205B2 (ja) *	1993-03-22	2004-06-07	株式会社半導体エネルギー研究所	薄膜トランジスタの作製方法
JP3329512B2 (ja) *	1993-03-22	2002-09-30	株式会社半導体エネルギー研究所	半導体回路およびその作製方法
JP3402380B2 (ja) *	1993-03-22	2003-05-06	株式会社半導体エネルギー研究所	半導体回路およびその作製方法
JP3190520B2 (ja) *	1994-06-14	2001-07-23	株式会社半導体エネルギー研究所	半導体装置およびその作製方法
US6300659B1 (en)	1994-09-30	2001-10-09	Semiconductor Energy Laboratory Co., Ltd.	Thin-film transistor and fabrication method for same
KR100531556B1 (ko) *	1994-11-26	2006-02-28	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체장치제조방법
JPH08153879A (ja)	1994-11-26	1996-06-11	Semiconductor Energy Lab Co Ltd	半導体装置の作製方法
US5977559A (en) *	1995-09-29	1999-11-02	Semiconductor Energy Laboratory Co., Ltd.	Thin-film transistor having a catalyst element in its active regions
TW451284B (en) *	1996-10-15	2001-08-21	Semiconductor Energy Lab	Semiconductor device and method of manufacturing the same
US6541793B2 (en)	1997-05-30	2003-04-01	Semiconductor Energy Laboratory Co., Ltd.	Thin-film transistor and semiconductor device using thin-film transistors
JP3376247B2 (ja) *	1997-05-30	2003-02-10	株式会社半導体エネルギー研究所	薄膜トランジスタ及び薄膜トランジスタを用いた半導体装置
JP4389359B2 (ja)	2000-06-23	2009-12-24	日本電気株式会社	薄膜トランジスタ及びその製造方法
KR101084242B1 (ko) *	2010-01-14	2011-11-16	삼성모바일디스플레이주식회사	유기 발광 표시 장치 및 그 제조 방법
CN109727875A (zh)	2018-12-25	2019-05-07	惠科股份有限公司	一种薄膜晶体管的制作方法和显示面板
CN109599343A (zh) *	2018-12-25	2019-04-09	惠科股份有限公司	薄膜晶体管及其制作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0693509B2 (ja) *	1983-08-26	1994-11-16	シャープ株式会社	薄膜トランジスタ
US4727044A (en) *	1984-05-18	1988-02-23	Semiconductor Energy Laboratory Co., Ltd.	Method of making a thin film transistor with laser recrystallized source and drain
US5124769A (en) *	1990-03-02	1992-06-23	Nippon Telegraph And Telephone Corporation	Thin film transistor
US5147826A (en) *	1990-08-06	1992-09-15	The Pennsylvania Research Corporation	Low temperature crystallization and pattering of amorphous silicon films
JP2999271B2 (ja) *	1990-12-10	2000-01-17	株式会社半導体エネルギー研究所	表示装置

1993
- 1993-03-12 JP JP07899993A patent/JP3369244B2/ja not_active Expired - Lifetime
1994
- 1994-03-12 CN CNB2005100919197A patent/CN100437945C/zh not_active Expired - Lifetime

Also Published As

Publication number	Publication date
CN100437945C (zh)	2008-11-26
CN1741257A (zh)	2006-03-01
JPH06267980A (ja)	1994-09-22

Publication	Publication Date	Title
JP3535205B2 (ja)	2004-06-07	薄膜トランジスタの作製方法
JP3637069B2 (ja)	2005-04-06	半導体装置の作製方法
US5646424A (en)	1997-07-08	Transistor device employing crystallization catalyst
KR100197780B1 (ko)	1999-06-15	트랜지스터 및 반도체 회로 제조 방법
JP3869189B2 (ja)	2007-01-17	薄膜トランジスタの作製方法
JP3369244B2 (ja)	2003-01-20	薄膜トランジスタ
JP3359689B2 (ja)	2002-12-24	半導体回路およびその作製方法
JPH06275807A (ja)	1994-09-30	半導体回路およびその作製方法
JPH06267988A (ja)	1994-09-22	半導体回路の作製方法
JP3514891B2 (ja)	2004-03-31	半導体装置およびその作製方法
JP3359691B2 (ja)	2002-12-24	薄膜トランジスタの作製方法
JP3431681B2 (ja)	2003-07-28	半導体回路の作製方法
JP3369530B2 (ja)	2003-01-20	薄膜トランジスタの作製方法
JP3333489B2 (ja)	2002-10-15	薄膜トランジスタの作製方法
JP3535465B2 (ja)	2004-06-07	半導体装置の作製方法
JP3362023B2 (ja)	2003-01-07	半導体装置の作製方法
JP3535463B2 (ja)	2004-06-07	半導体回路の作製方法
JP3316201B2 (ja)	2002-08-19	半導体回路
JP3330923B2 (ja)	2002-10-07	半導体回路の作製方法
JP3181817B2 (ja)	2001-07-03	薄膜トランジスタ
JP3181901B2 (ja)	2001-07-03	薄膜トランジスタ
JP3330922B2 (ja)	2002-10-07	半導体回路の作製方法
JP2000269502A (ja)	2000-09-29	半導体装置

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