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JP2581971B2 - Ball forming apparatus and method of detecting broken wire - Google Patents

Ball forming apparatus and method of detecting broken wire

Info

Publication number
JP2581971B2
JP2581971B2 JP63288864A JP28886488A JP2581971B2 JP 2581971 B2 JP2581971 B2 JP 2581971B2 JP 63288864 A JP63288864 A JP 63288864A JP 28886488 A JP28886488 A JP 28886488A JP 2581971 B2 JP2581971 B2 JP 2581971B2
Authority
JP
Japan
Prior art keywords
circuit
constant current
wire
voltage
discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63288864A
Other languages
Japanese (ja)
Other versions
JPH02135746A (en
Inventor
明雄 藤江
光格 山崎
好勝 林崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kaijo Corp
Original Assignee
Kaijo Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaijo Corp filed Critical Kaijo Corp
Priority to JP63288864A priority Critical patent/JP2581971B2/en
Publication of JPH02135746A publication Critical patent/JPH02135746A/en
Application granted granted Critical
Publication of JP2581971B2 publication Critical patent/JP2581971B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8503Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、ワイヤの先端部にネイルヘッドボンディン
グ用のボールを放電により形成するボール形成装置及び
そのワイヤ切れ検知方法に関するものである。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ball forming apparatus for forming a ball for nail head bonding at a distal end portion of a wire by electric discharge, and a method of detecting a broken wire.

〔従来の技術〕[Conventional technology]

最近、ワイヤとこのワイヤの先端部に対向する電極の
間に高圧の電極電圧で放電電圧を短時間加え、ワイヤの
先端部にネイルヘッドボンディング用のボールを形成す
ることが知られている(図示せず)。
Recently, it has been known that a discharge voltage is applied for a short time with a high electrode voltage between a wire and an electrode facing the tip of the wire to form a ball for nail head bonding at the tip of the wire (FIG. Not shown).

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

ところで、ワイヤのキャピラリからの繰り出しは、ワ
イヤの先端部が所定の位置に正しく位置するように行わ
れるが、ワイヤの1回の繰り出し毎に微妙に異なり、ワ
イヤの先端部と電極との間の間隙、すなわち、放電ギャ
ップ(この点につき、第1図参照)dの長さが一定では
ない。また、この他にも、調整のばらつきや電極の放電
摩耗などにより、放電ギャップdの長さが微妙に変化す
る。このようにして放電ギャップdの長さが変化する
と、ワイヤに流れる電流値が変化し、均一な大きさのボ
ールを毎回形成することが困難であった。さらに、ワイ
ヤと電極の間の放電ギャップd、すなわち、絶縁体を電
源電圧で直接破壊するようにすると、電源電圧等のふれ
によっては絶縁破壊が起こらないことがあった。
By the way, the feeding of the wire from the capillary is performed so that the tip of the wire is correctly positioned at a predetermined position. However, each time the feeding of the wire is slightly different, the difference between the tip of the wire and the electrode is small. The length of the gap, ie the discharge gap d (for this point, see FIG. 1) d, is not constant. In addition, the length of the discharge gap d slightly changes due to variations in adjustment and discharge wear of the electrodes. When the length of the discharge gap d changes in this way, the value of the current flowing through the wire changes, and it has been difficult to form a ball having a uniform size every time. Further, when the discharge gap d between the wire and the electrode, that is, the insulator is directly destroyed by the power supply voltage, the dielectric breakdown may not occur depending on the fluctuation of the power supply voltage or the like.

本発明は、上述の従来の問題点を解決しようとするも
ので、放電ギャップの長さに影響されることなく所定の
大きさのボールを形成し、電源電圧等の若干のふれに対
しても確実に絶縁破壊が可能なボール形成装置を提供す
ることを目的とするものである。
The present invention is intended to solve the above-mentioned conventional problems, and forms a ball of a predetermined size without being affected by the length of a discharge gap, and is capable of withstanding a slight fluctuation of a power supply voltage or the like. It is an object of the present invention to provide a ball forming apparatus capable of reliably performing dielectric breakdown.

さらに、上述のボール形成装置のワイヤ切れを簡単、
かつ確実に検知する方法を提供しようとするものであ
る。
Furthermore, it is easy to cut the wire of the ball forming device described above,
In addition, it is intended to provide a method for performing reliable detection.

〔課題を解決するための手段〕[Means for solving the problem]

請求項1記載の発明においては、上述の目的を達成す
るため、ワイヤの先端部にネイルヘッドボンディング用
のボールを高電圧電源から供給された高電圧の放電によ
り形成するボール形成装置において、放電回路を、放電
負荷電流又は電位のフィードバック回路で高電圧電源か
ら供給される電流を定電流化する定電流回路と、高電圧
重畳回路とからなり、定電流回路及び高電圧重畳回路を
動作させるトリガー回路とを備え、前記高電圧重畳回路
により絶縁を破壊して定電流回路により所定の定電流で
放電を続けることができるようにしている。
According to the first aspect of the present invention, there is provided a ball forming apparatus for forming a nail head bonding ball at a tip end of a wire by a high voltage discharge supplied from a high voltage power supply. A trigger circuit for operating the constant current circuit and the high voltage superimposing circuit, comprising a constant current circuit for making the current supplied from the high voltage power supply constant by a discharge load current or potential feedback circuit, and a high voltage superimposing circuit. The high-voltage superimposing circuit breaks the insulation so that the constant current circuit can continue discharging at a predetermined constant current.

また、請求項2記載の発明においては、上述の目的を
達成するため、高電圧電源から定電流回路と高電圧重畳
回路に電気エネルギをそれぞれ供給して定電流回路から
電極に定電流をフィードバック回路を介して供給させ、
これに絶縁破壊用の高圧の定電圧を高電圧重畳回路から
重畳してワイヤと電極の間の絶縁を破壊し、ワイヤと電
極の間の放電作用によりワイヤの先端部を溶かしてボー
ルを形成するボール形成装置のワイヤの切断を検知する
方法であって、前記フィードバック回路から出力される
定電流回路の制御電流又は電圧の変化により、ワイヤ切
れを検知するようにしている。
According to the present invention, in order to achieve the above object, a high voltage power supply supplies electric energy to a constant current circuit and a high voltage superposition circuit, respectively, and a constant current is fed from the constant current circuit to the electrode. Through the
A high-voltage constant voltage for dielectric breakdown is superimposed on this from a high-voltage superimposing circuit to break the insulation between the wire and the electrode, and a discharge action between the wire and the electrode melts the tip of the wire to form a ball. A method for detecting a break in a wire of a ball forming apparatus, wherein a break in the wire is detected by a change in a control current or a voltage of a constant current circuit output from the feedback circuit.

〔作 用〕(Operation)

請求項1記載の発明によれば、定電流回路と高電圧重
畳回路に電気エネルギが高電圧電源から供給され、トリ
ガー回路が定電流回路と高電圧重畳回路を動作させる。
すると、定電流回路から電極に定電流が作用するととも
に、これに絶縁破壊用の高圧の定電圧が高電圧重畳回路
から重畳され、ワイヤと電極の間の絶縁が破壊され、ワ
イヤと電極の間にアークが形成される。こうして、ワイ
ヤと電極の間の放電作用により、ワイヤの先端部が溶け
てボールが形成される。この作業の際、フィードバック
回路は、入力した電源電圧に対する放電負荷電圧の大小
を判別し、この判別により定電流回路に所定の定電流を
流させる。
According to the first aspect of the invention, electric energy is supplied from the high voltage power supply to the constant current circuit and the high voltage superimposing circuit, and the trigger circuit operates the constant current circuit and the high voltage superimposing circuit.
Then, a constant current acts on the electrode from the constant current circuit, and a high-voltage constant voltage for dielectric breakdown is superimposed on the electrode from the high-voltage superimposing circuit, so that the insulation between the wire and the electrode is broken and the wire between the electrode and the electrode is broken. An arc is formed. Thus, the discharge action between the wire and the electrode melts the tip of the wire to form a ball. In this operation, the feedback circuit determines the magnitude of the discharge load voltage with respect to the input power supply voltage, and causes the constant current circuit to flow a predetermined constant current based on the determination.

また、請求項2記載の発明によれば、ワイヤが切れる
と、負荷の減少に伴い電圧が上昇してフィードバック回
路に入力される放電電圧の値が変化し、この変化に応じ
た制御信号をフィードバック回路が定電流回路に出力す
る。この変化した制御信号が検知されることにより、ワ
イヤ切れが判明する。
According to the second aspect of the present invention, when the wire is cut, the voltage rises with a decrease in the load and the value of the discharge voltage input to the feedback circuit changes, and a control signal corresponding to this change is fed back. The circuit outputs to the constant current circuit. By detecting the changed control signal, it is determined that the wire is broken.

〔実施例〕〔Example〕

以下、本発明の実施例を第1図及び第2図を用いて説
明する。
An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.

本実施例におけるボール形成装置は、放電回路4とし
て、ワイヤ1と電極3の間に放電電圧を加える高電圧直
流電源6と、この高電圧直流電源6から供給される電流
を定電流化する定電流回路5と、ワイヤ1と電極3の間
の放電ギャップdを破壊する高電圧重畳回路12と、定電
流回路5及び高電圧重畳回路12を動作させるトリガー回
路10とを備えている。
The ball forming apparatus according to the present embodiment includes, as a discharge circuit 4, a high-voltage DC power supply 6 for applying a discharge voltage between the wire 1 and the electrode 3, and a constant current for converting a current supplied from the high-voltage DC power supply 6 to a constant current. It includes a current circuit 5, a high voltage superimposing circuit 12 for breaking a discharge gap d between the wire 1 and the electrode 3, and a trigger circuit 10 for operating the constant current circuit 5 and the high voltage superimposing circuit 12.

ワイヤ1は、金、アルミニウム、又は銅などからな
り、XYZ方向に動作可能なキャピラリ2に通されてお
り、このキャピラリ2の先端部の下方には電極3が放電
ギャップdを介して配置されている。
The wire 1 is made of gold, aluminum, copper, or the like, and is passed through a capillary 2 operable in XYZ directions. An electrode 3 is disposed below a tip of the capillary 2 via a discharge gap d. I have.

また、放電回路4を構成する定電流回路5は、第2図
に示すように、定電流用の可変の定電流基準電源13の電
源電圧と放電電圧とを入力する比較用のオペアンプ7を
備えたフィードバック回路8と、このフィードバック回
路8のオペアンプ7から出力された電流を増幅して供給
する制御用トランジスタ9とを備えている。この制御用
トランジスタ9は、そのエミッタが高電圧直流電源6
に、ベースがオペアンプ7の出力側にそれぞれ接続され
ている。このように構成された定電流回路5は、一定電
流維持能力が高く、過渡応答性の優れた電流可変機能を
有しており、高電圧重畳回路12と同時にトリガー回路10
により入力され、所定時間アークを維持してワイヤ1の
先端部に所定の大きさのボール11を形成するよう機能す
る。
Further, as shown in FIG. 2, the constant current circuit 5 constituting the discharge circuit 4 includes a comparison operational amplifier 7 for inputting a power supply voltage of a constant current variable constant current reference power supply 13 and a discharge voltage. A feedback circuit 8 and a control transistor 9 for amplifying and supplying the current output from the operational amplifier 7 of the feedback circuit 8. The control transistor 9 has an emitter connected to the high-voltage DC power supply 6.
The bases are connected to the output side of the operational amplifier 7, respectively. The constant current circuit 5 configured as described above has a high constant current maintaining capability and a current variable function with excellent transient response.
And functions to form a ball 11 of a predetermined size at the tip of the wire 1 while maintaining the arc for a predetermined time.

また、高電圧重畳回路12は、トリガー回路10によりワ
イヤ1と電極3の放電ギャップdに、例えばワイヤ1が
金線のとき、2500V以上、好ましくは3000V以上の高圧の
定電圧を定電圧回路により瞬時だけ発生させ、絶縁を破
壊してアークを形成するようになっている。高圧の定電
圧を発生させるのは、高電圧直流電源6及び定電流基準
電源13に対する影響並びに絶縁破壊の不安定性を抑制防
止するためである。なお、高電圧重畳回路12により、電
極3からワイヤ1の間に一旦アークが形成されると、そ
の後は、定電流回路5の電圧のみで十分で、高電圧直流
電源6は例えば1200Vでよい。
The high-voltage superimposing circuit 12 applies a high-voltage constant voltage of 2500 V or more, preferably 3000 V or more to the discharge gap d between the wire 1 and the electrode 3 by the trigger circuit 10 when the wire 1 is a gold wire. It is generated only instantaneously and breaks the insulation to form an arc. The reason why the high-voltage constant voltage is generated is to prevent influence on the high-voltage DC power supply 6 and the constant-current reference power supply 13 and to prevent instability of dielectric breakdown. Once an arc is formed between the electrode 3 and the wire 1 by the high voltage superimposing circuit 12, thereafter, only the voltage of the constant current circuit 5 is sufficient, and the high voltage DC power supply 6 may be, for example, 1200V.

上記構成において、ワイヤ1の先端部にネイルヘッド
ボンディング用のボール11を形成するには、先ず、定電
流回路5と高電圧重畳回路12に電気エネルギが高電圧直
流電源6からそれぞれ供給され、トリガー回路10が定電
流回路5と高電圧重畳回路12をそれぞれ動作させる。す
ると、定電流回路5から電極3に定電流が作用するとと
もに、この定電圧に絶縁破壊用の高圧の定電圧が高電圧
重畳回路12から重畳され、ワイヤ1と電極3の間の絶縁
が破壊され、ワイヤ1と電極3の間にアークが形成され
る。そして、ワイヤ1と電極3の間の放電作用により、
ワイヤ1の先端部が溶けてボール11が形成される。
In the above configuration, in order to form a ball 11 for nail head bonding at the tip of the wire 1, first, electric energy is supplied from the high-voltage DC power supply 6 to the constant current circuit 5 and the high-voltage superimposing circuit 12, respectively. The circuit 10 operates the constant current circuit 5 and the high voltage superimposing circuit 12 respectively. Then, a constant current acts on the electrode 3 from the constant current circuit 5, and a high voltage constant voltage for insulation breakdown is superimposed on the constant voltage from the high voltage superimposing circuit 12, so that the insulation between the wire 1 and the electrode 3 is broken. As a result, an arc is formed between the wire 1 and the electrode 3. And, by the discharge action between the wire 1 and the electrode 3,
The ball 11 is formed by melting the tip of the wire 1.

なお、定電流回路5は、タイマ制御などにより、電極
3に定電流を所定の時間だけ供給する。また、定電流値
とアーク持続時間は、所定のボール11の大きさと所定の
再結晶領域の長さが得られるよう選択される。すなわ
ち、ボール11の直上のワイヤ1部分に生成される再結晶
領域の長さは、電流の流れる時間が長くなると、それに
応じて長くなる傾向がある。この再結晶領域の長さは、
ワイヤ1ボンディング後のループ形状に影響するので、
所定のボール11の大きさと所定の再結晶領域の長さが得
られるよう定電流値とアーク持続時間は選択される。
The constant current circuit 5 supplies a constant current to the electrode 3 for a predetermined time by timer control or the like. Further, the constant current value and the arc duration are selected so as to obtain a predetermined ball 11 size and a predetermined recrystallization region length. In other words, the length of the recrystallized region generated in the portion of the wire 1 directly above the ball 11 tends to be longer as the current flowing time becomes longer. The length of this recrystallization region is
Since it affects the loop shape after wire 1 bonding,
The constant current value and the arc duration are selected so as to obtain a predetermined ball 11 size and a predetermined recrystallization region length.

フィードバック回路8は、入力した定電流基準電源13
の電源電圧に対する放電電圧の大きいか小さいかをオペ
アンプ7で比較し、この比較に応じた電圧信号を制御用
トランジスタ9のベースに供給する。この供給作用によ
り、制御用トランジスタ9のエミッタからコレクタに流
れる電流が制御され、ボール11の形成は定電流の放電で
行われることとなる。
The feedback circuit 8 receives the input constant current reference power 13
The operational amplifier 7 compares whether the discharge voltage is large or small with respect to the power supply voltage, and supplies a voltage signal corresponding to the comparison to the base of the control transistor 9. By this supply operation, the current flowing from the emitter to the collector of the control transistor 9 is controlled, and the formation of the ball 11 is performed by discharging a constant current.

上記構成によれば、定電流を利用して放電作業を行う
ので、放電ギャップdの長さに関係なく常に電極3から
ワイヤ1に定電流が流れることとなる。したがって、ワ
イヤ1の先端部に均一な大きさのボール11を毎回形成す
ることが可能になる。また、放電ギャップdの絶縁体を
電源電圧で直接破壊するのではなく、高電圧重畳回路12
で定電圧に高圧の定電圧を重畳して絶縁を破壊するの
で、確実な絶縁破壊が期待できるとともに、高電圧直流
電源6や定電流回路5の回路や装置の小型化を図ること
ができる。さらに、オペアンプ7及び制御用トランジス
タ9を用いるので、回路の安定化、そして定電流の安定
化が期待できる。
According to the above configuration, since the discharging operation is performed using the constant current, the constant current always flows from the electrode 3 to the wire 1 regardless of the length of the discharge gap d. Therefore, a ball 11 having a uniform size can be formed at the tip of the wire 1 every time. Also, instead of directly destroying the insulator in the discharge gap d by the power supply voltage, a high-voltage superimposing circuit 12 is used.
Since the insulation is broken by superimposing a high constant voltage on the constant voltage, reliable insulation breakdown can be expected, and the circuits and devices of the high-voltage DC power supply 6 and the constant current circuit 5 can be downsized. Further, since the operational amplifier 7 and the control transistor 9 are used, the stabilization of the circuit and the stabilization of the constant current can be expected.

次に、第2図を用いてワイヤ切れ検知方法の実施例に
ついて説明する。
Next, an embodiment of the wire break detection method will be described with reference to FIG.

本実施例におけるワイヤ切れ検知方法は、制御用トラ
ンジスタ9のベースに電圧信号を増幅して供給するオペ
アンプ7の出力側に制御用の電圧を検出する電位検出回
路14を挿入し、この電位検出回路14にワイヤ切れ検知回
路(図示せず)を挿入している。その他の部分について
は、上記説明と同様であるので省略する。
In the method of detecting a broken wire according to the present embodiment, a potential detection circuit 14 for detecting a control voltage is inserted on the output side of an operational amplifier 7 for amplifying and supplying a voltage signal to the base of a control transistor 9. A wire break detection circuit (not shown) is inserted in 14. Other parts are the same as those described above, and will not be described.

したがって、ボール11の形成の際、ワイヤ1が切れる
と、電圧が上昇してオペアンプ7に入力される放電電圧
の値が変化し、この変化に応じた電圧信号をオペアンプ
7は制御用トランジスタ9のベースに供給する。この変
化した電圧信号は電位検出回路14に検知され、これによ
りワイヤ切れが判明する。
Therefore, when the wire 1 is cut when the ball 11 is formed, the voltage increases and the value of the discharge voltage input to the operational amplifier 7 changes, and the operational amplifier 7 outputs a voltage signal corresponding to this change to the control transistor 9. Supply to base. The changed voltage signal is detected by the potential detection circuit 14, and it is determined that the wire is broken.

上記方法によれば、オペアンプ7から制御用トランジ
スタ9のベースに供給される制御用の電圧信号の変化を
電位検出回路14で検知してワイヤ1の切れを検出するの
で、論理積などによりワイヤ1の切れを検出するのに比
べ、回路の構成を著しく簡素化することができる。さら
に、検知対象を放電電流や放電電圧としないので、安全
確実である。〔発明の効果〕 以上のように請求項1記載のボール形成装置によれ
ば、放電回路を、放電負荷電流又は電位のフィードバッ
ク回路で高電圧電源から供給される電流を定電流化する
定電流回路と、高電圧重畳回路とからなり、定電流回路
及び高電圧重畳回路を動作させるトリガー回路とを備
え、前記高電圧重畳回路により絶縁を破壊して定電流回
路により所定の定電流で放電を続けるようにしているの
で、一定の時間放電を続けることにより、放電ギャップ
の大小に関係なく、同じ大きさのボールをワイヤの先端
部に形成することができるという効果がある。また、高
電圧重畳回路で電源電圧よりも極めて高い電圧を瞬間的
に発生させることができるから、確実な絶縁破壊が期待
できる。また、定電流回路にアークの負担分のみを分担
させればよいから、定電流回路を小型化することができ
る。また、高電圧重畳回路に絶縁破壊のみを分担させれ
ばよいから、高電圧重畳回路の小型化が期待できる。
According to the above-described method, a change in the control voltage signal supplied from the operational amplifier 7 to the base of the control transistor 9 is detected by the potential detection circuit 14 to detect the disconnection of the wire 1. The circuit configuration can be significantly simplified as compared with the detection of disconnection. Further, since the detection target is not a discharge current or a discharge voltage, safety is ensured. [Effect of the Invention] As described above, according to the ball forming apparatus of the first aspect, the constant current circuit that makes the discharge circuit a constant current of the current supplied from the high voltage power supply by the discharge load current or the potential feedback circuit. And a trigger circuit for operating the constant current circuit and the high voltage superimposing circuit. The high voltage superimposing circuit breaks insulation and continues discharging at a predetermined constant current by the constant current circuit. Therefore, by continuing the discharge for a certain period of time, there is an effect that a ball of the same size can be formed at the tip of the wire regardless of the size of the discharge gap. Further, since a voltage extremely higher than the power supply voltage can be instantaneously generated by the high voltage superimposing circuit, reliable insulation breakdown can be expected. In addition, the constant current circuit only needs to share the burden of the arc, so that the constant current circuit can be downsized. In addition, since only the insulation breakdown needs to be shared by the high-voltage superimposed circuit, the miniaturization of the high-voltage superimposed circuit can be expected.

また、請求項2記載のワイヤ切れ検知方法によれば、
フィードバック回路から出力される定電流回路の制御電
流又は電圧の変化により、ワイヤ切れを検知するので、
簡単かつ確実にワイヤ切れを検知することができるとい
う効果がある。
Further, according to the method for detecting a broken wire according to claim 2,
Since a break in the wire is detected by a change in the control current or voltage of the constant current circuit output from the feedback circuit,
There is an effect that a broken wire can be easily and reliably detected.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明に係るボール形成装置の実施例のフロー
図、第2図は本発明に係るボール形成装置及びそのワイ
ヤ切れ検知方法における定電流回路の実施例の回路図で
ある。 1……ワイヤ、2……キャピラリ、3……電極、4……
放電回路、5……定電流回路、6……高電圧直流電源、
7……オペアンプ、8……フィードバック回路、9……
制御用トランジスタ、10……トリガー回路、11……ボー
ル、12……高電圧重畳回路、13……定電流基準電源、14
……電位検出回路。
FIG. 1 is a flowchart of an embodiment of a ball forming apparatus according to the present invention, and FIG. 2 is a circuit diagram of an embodiment of a constant current circuit in the ball forming apparatus according to the present invention and a method for detecting a broken wire. 1 ... wire, 2 ... capillary, 3 ... electrode, 4 ...
Discharge circuit, 5: constant current circuit, 6: high-voltage DC power supply,
7 ... operational amplifier, 8 ... feedback circuit, 9 ...
Control transistor, 10 Trigger circuit, 11 Ball, 12 High voltage superimposing circuit, 13 Constant current reference power supply, 14
…… A potential detection circuit.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭57−40947(JP,A) 特開 昭61−260644(JP,A) 特開 昭61−49433(JP,A) 特開 昭61−124143(JP,A) 実開 昭63−197338(JP,U) ──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-57-40947 (JP, A) JP-A-61-260644 (JP, A) JP-A-61-49433 (JP, A) JP-A-61-49433 124143 (JP, A) Shokai 63-197338 (JP, U)

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】ワイヤの先端部にネイルヘッドボンディン
グ用のボールを高電圧電源から供給された高電圧の放電
により形成するボール形成装置において、放電回路を、
放電負荷電流又は電位のフィードバック回路で高電圧電
源から供給される電流を定電流化する定電流回路と、高
電圧重畳回路とからなり、定電流回路及び高電圧重畳回
路を動作させるトリガー回路とを備え、前記高電圧重畳
回路により絶縁を破壊して定電流回路により所定の定電
流で放電を続けることができるようにしたことを特徴と
するボール形成装置。
In a ball forming apparatus for forming a nail head bonding ball at a tip end of a wire by high-voltage discharge supplied from a high-voltage power supply, a discharge circuit includes:
A constant current circuit for making the current supplied from the high voltage power supply a constant current by a discharge load current or potential feedback circuit, and a trigger circuit for operating the constant current circuit and the high voltage superimposition circuit, comprising a high voltage superimposition circuit. A ball forming apparatus, wherein insulation is broken down by the high voltage superimposing circuit, and discharge can be continued at a predetermined constant current by a constant current circuit.
【請求項2】高電圧電源から定電流回路と高電圧重畳回
路に電気エネルギをそれぞれ供給して定電流回路から電
極に定電流をフィードバック回路を介して供給させ、こ
れに絶縁破壊用の高圧の定電圧を高電圧重畳回路から重
畳してワイヤと電極の間の絶縁を破壊し、ワイヤと電極
の間の放電作用によりワイヤの先端部を溶かしてボール
を形成するボール形成装置のワイヤの切断を検知する方
法であって、前記フィードバック回路から出力される定
電流回路の制御電流又は電圧の変化により、ワイヤ切れ
を検知することを特徴とするワイヤ切れ検知方法。
2. An electric energy is supplied from a high voltage power supply to a constant current circuit and a high voltage superimposing circuit, respectively, and a constant current is supplied from the constant current circuit to the electrode through a feedback circuit. A constant voltage is superimposed from a high-voltage superimposing circuit to break the insulation between the wire and the electrode, and the discharge action between the wire and the electrode melts the tip of the wire to form a ball. A method for detecting disconnection of a wire, comprising detecting a disconnection of a wire based on a change in a control current or a voltage of a constant current circuit output from the feedback circuit.
JP63288864A 1988-11-17 1988-11-17 Ball forming apparatus and method of detecting broken wire Expired - Lifetime JP2581971B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63288864A JP2581971B2 (en) 1988-11-17 1988-11-17 Ball forming apparatus and method of detecting broken wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63288864A JP2581971B2 (en) 1988-11-17 1988-11-17 Ball forming apparatus and method of detecting broken wire

Publications (2)

Publication Number Publication Date
JPH02135746A JPH02135746A (en) 1990-05-24
JP2581971B2 true JP2581971B2 (en) 1997-02-19

Family

ID=17735740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63288864A Expired - Lifetime JP2581971B2 (en) 1988-11-17 1988-11-17 Ball forming apparatus and method of detecting broken wire

Country Status (1)

Country Link
JP (1) JP2581971B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6076537B1 (en) * 2015-05-03 2017-02-08 株式会社カイジョー Ball bonder for wire bonder

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4459452A (en) * 1980-06-30 1984-07-10 The Welding Institute Ball bonding of wire
JPS61260644A (en) * 1985-05-15 1986-11-18 Oki Electric Ind Co Ltd Bonding device

Also Published As

Publication number Publication date
JPH02135746A (en) 1990-05-24

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