JP2014220916A - Power conversion device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power conversion device capable of being downsized and easily connecting mutually laminated semiconductor modules and control circuit unit.SOLUTION: A power conversion device 1 comprises: semiconductor modules 2A1, 2A2, and 2B including semiconductor elements 21A and 21B, and an element inclusion part 22; a cooler 4 which cools the semiconductor modules 2A1, 2A2, and 2B; a control circuit unit 3 including a control substrate 31 and a substrate inclusion part 32; pressurizing means 5 for pressurizing a state in which the semiconductor modules 2A1, 2A2, and 2B, the cooler 4, and the control circuit unit 3 are laminated; and a connection member 6 for connecting element control terminals 23A and 23B and a substrate control terminal 33. The element control terminals 23A and 23B, and the substrate control terminal 33 are drawn in a direction orthogonal to a lamination direction L. The connection member 6 connects the element control terminals 23A and 23B and the substrate control terminal 33 in the lamination direction L.

Description

  The present invention relates to a power conversion device that converts power using a semiconductor element.

In a power conversion device used for conversion from DC power to AC power, voltage conversion of DC power, and the like, a semiconductor module having a semiconductor element as a heat generating component is sandwiched and held by a cooler.
For example, in the power conversion device of Patent Document 1, a plurality of semiconductor modules containing semiconductor elements and coolers that cool the semiconductor modules are alternately stacked, and control is performed orthogonally to the plurality of semiconductor modules and coolers. It is described that a circuit part is arranged. A plurality of signal terminals in the semiconductor module are connected to a control board in the control circuit unit, and a main electrode terminal in the semiconductor module is connected to a power supply circuit or the like by a bus bar.

JP 2007-174760 A

  However, in Patent Document 1, if the control circuit unit is arranged orthogonal to a plurality of semiconductor modules and coolers, a dead space is likely to be formed on both sides of the control circuit unit, and the size of the power conversion device is reduced. It will increase in size.

One aspect of the present invention includes a semiconductor element and a semiconductor module including an element inclusion part that encloses an element main body part of the semiconductor element, and an element control terminal of the semiconductor element is drawn out of the element inclusion part,
A cooler that contacts the semiconductor module and cools the semiconductor module;
A control board for controlling the operation of the semiconductor element; and a substrate inclusion part for enclosing a substrate main body part of the control board, wherein a substrate control terminal of the control board is drawn out of the substrate inclusion part, and the semiconductor module And a control circuit unit stacked in the stacking direction of the cooler,
A connection member for connecting the element control terminal and the substrate control terminal,
The element control terminal and the substrate control terminal are drawn out in a direction perpendicular to the stacking direction,
The connection member is in the power conversion device, wherein the element control terminal and the substrate control terminal are connected in the stacking direction.

  In the power converter, the element inclusion part of the semiconductor module, the cooler, and the substrate inclusion part of the control circuit part are stacked in the stacking direction. And since a control circuit part is laminated | stacked with respect to a semiconductor module and a cooler, a dead space is not formed in both surfaces of a control circuit part, but the size of a power converter device can be reduced as much as possible.

The element control terminal is drawn out in the direction perpendicular to the stacking direction outside the element inclusion part of the semiconductor module, and the board control terminal is outside the board inclusion part in the control circuit part and in the stacking direction. It is pulled out in the direction orthogonal. The element control terminal and the substrate control terminal are connected in the stacking direction by a connection member.
As a result, it is possible to prevent the power conversion device from becoming large, and to easily connect the semiconductor modules and the control circuit units stacked on each other.

  Therefore, according to the above power conversion device, it is possible to reduce the size and to easily connect the semiconductor modules and the control circuit unit stacked on each other.

Cross-sectional explanatory drawing which shows the lamination | stacking state of each structural member in an electric power converter concerning an Example in the state seen from the front. Explanatory drawing which shows the lamination | stacking state of each structural member in a power converter device in the state seen from the side concerning an Example. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an explanatory diagram illustrating a periphery of a connection member that connects an element control terminal of a semiconductor module and a substrate control terminal of a control circuit unit in a power conversion device according to an embodiment when viewed from the front. The explanatory view which shows the periphery of the connection member which connects the element control terminal of a semiconductor module and the board | substrate control terminal of a control circuit part in the power converter device concerning an Example in the back view. Explanatory drawing which shows the semiconductor module in the power converter device concerning an Example in the state seen planarly. Explanatory drawing which shows the control circuit part in an electric power converter concerning a Example in planar view. Explanatory drawing which shows the inverter circuit formed by the power converter device concerning an Example.

A preferred embodiment of the above-described power conversion device will be described.
In the power conversion device, the control circuit unit may be sandwiched between the coolers, may be sandwiched between the semiconductor modules, and the cooler and the semiconductor module It may be sandwiched between them, and may be arranged at the end of the semiconductor module and the cooler in the stacking direction.

Further, the connecting member includes a conductor portion that connects the element control terminal and the substrate control terminal to a flexible insulating substrate having a plate surface arranged in parallel to the stacking direction. It may be provided.
In this case, the thickness of the insulating substrate is thin enough to be flexible, and the weight can be reduced. Further, the insulating substrate is held by being connected to the element control terminal and the substrate control terminal, and it becomes unnecessary to separately fix the insulating substrate.
The insulating substrate can be formed to a thickness of, for example, 0.05 to 0.2 mm so as to have flexibility.

Hereinafter, embodiments of the power conversion device will be described with reference to the drawings.
As shown in FIGS. 1 and 2, the power conversion device 1 of this example includes semiconductor modules 2 </ b> A <b> 1, 2 </ b> A <b> 2 and 2 </ b> B, a cooler 4, a control circuit unit 3, a pressurizing unit 5, and a connection member 6.
As shown in FIG. 5, the semiconductor modules 2A1, 2A2, and 2B have element inclusion portions 22 that contain the semiconductor elements 21A and 21B and the element main bodies 211 of the semiconductor elements 21A and 21B. The element control terminals 23 </ b> A and 23 </ b> B of the semiconductor elements 21 </ b> A and 21 </ b> B are drawn out of the element inclusion part 22. As shown in FIG. 1, the cooler 4 is in contact with the semiconductor modules 2A1, 2A2, and 2B to cool the semiconductor modules 2A1, 2A2, and 2B.

  As shown in FIG. 6, the control circuit unit 3 includes a control substrate 31 that controls the operation of the semiconductor elements 21 </ b> A and 21 </ b> B, and a substrate inclusion portion 32 that encloses the substrate body portion 311 of the control substrate 31. The board control terminal 33 of the control board 31 is drawn to the outside of the board inclusion part 32. The control circuit unit 3 is in contact with the cooler 4 and stacked in the stacking direction L of the semiconductor modules 2A1, 2A2, 2B and the cooler 4. As shown in FIGS. 3 and 4, the pressurizing means 5 includes the element inclusion part 22 of the semiconductor modules 2 </ b> A <b> 1, 2 </ b> A <b> 2 and 2 </ b> B, the cooler 4, and the substrate inclusion part 32 of the control circuit part 3 stacked in the stacking direction L. It is configured to pressurize the state. The connecting member 6 connects the element control terminals 23A and 23B and the substrate control terminal 33. The element control terminals 23A and 23B and the substrate control terminal 33 are drawn out in a direction orthogonal to the stacking direction L as shown in FIG. The connection member 6 connects the element control terminals 23A and 23B and the substrate control terminal 33 in the stacking direction L.

Below, it demonstrates in full detail with reference to FIGS. 1-7 about the power converter device 1 of this example.
As shown in FIG. 7, the power conversion device 1 of this example forms an inverter circuit 10 that converts DC power into AC power using the semiconductor elements (switching elements) 21 of the semiconductor modules 2A1, 2A2, and 2B. In the inverter circuit 10, in addition to the semiconductor element 21A, a DC power source (battery) 13, a filter capacitor 131 that removes noise generated in the DC power source 13, a boosting semiconductor element 21B that constitutes a boosting circuit 14 that boosts the power supply voltage, and A reactor 15 and a smoothing capacitor 16 for smoothing AC power converted from DC power are provided.
The inverter circuit 10 forms a three-phase bridge circuit 11 that drives a three-phase motor (motor generator) 12 by a driving semiconductor element 21A. The three-phase bridge circuit 11 is configured by connecting two sets of driving semiconductor elements 21 </ b> A connected in series to the smoothing capacitor 16 in parallel with the three-phase coil 121 in the three-phase motor 12. ing.

In the inverter circuit 10, two three-phase bridge circuits 11 are formed corresponding to the two three-phase motors 12.
The semiconductor modules 2A1, 2A2, and 2B of this example include two driving semiconductor modules 2A1 and 2A2 for forming two three-phase bridge circuits 11, and one boosting semiconductor module for forming a booster circuit 14. 2B.
Each of the semiconductor elements 21A and 21B in the two driving semiconductor modules 2A1 and 2A2 and one boosting semiconductor module 2B is an IGBT (insulated gate bipolar transistor), and the IGBT protects the transistor 212 and the transistor 212 from a surge voltage. And a diode 213 for doing so.

  As shown in FIG. 5, each pair of two driving semiconductor elements 21A in the driving semiconductor modules 2A1 and 2A2 includes a pair of power sources on the plus side and the minus side connected to the plus side and the minus side of the smoothing capacitor 16. The terminal 24A has a set of three drive terminals 25A connected to the three-phase coil 121 in the three-phase motor 12, and an element control terminal 23A that receives a control signal from the control board 31. The pair of power supply terminal 24A, drive terminal 25A, and element control terminal 23A are drawn from the element body 211 of the drive semiconductor element 21A. The element control terminal 23A includes a terminal for monitoring voltage or current, in addition to a terminal for receiving a switching signal to the driving semiconductor element 21A.

  Further, as shown in the figure, the two boosting semiconductor elements 21B in the boosting semiconductor module 2B include a pair of power terminals 24B on the plus side and the minus side connected to the plus side and the minus side of the smoothing capacitor 16. An intermediate terminal 25B connected to the reactor 15 and an element control terminal 23B for receiving a control signal from the control board 31 are provided. The pair of power supply terminal 24B, intermediate terminal 25B, and element control terminal 23B are drawn from the element body 211 of the boosting semiconductor element 21B. The element control terminal 23B includes a terminal for monitoring voltage or current, in addition to a terminal for receiving a switching signal to the boosting semiconductor element 21B.

  As shown in FIG. 5, each of the semiconductor modules 2A1, 2A2, and 2B has an element inclusion portion 22 that encloses the element body portion 211 of each of the semiconductor elements 21A and 21B. A pair of power supply terminals 24A, 24B, a drive terminal 25A (intermediate terminal 25B), and an element control terminal 23A of each semiconductor element 21A, 21B are drawn out of the element inclusion portion 22 from each semiconductor element 21A, 21B. The element inclusion part 22 is formed of an insulating mold resin that covers the element body part 211.

In the driving semiconductor modules 2 </ b> A <b> 1 and 2 </ b> A <b> 2, the element control terminal 23 </ b> A is pulled out from one side surface 201 of the element inclusion portion 22 and the other side surface 202 located on the opposite side of the one side surface 201. The pair of power supply terminals 24 </ b> A are drawn from one side surface 201 of the element inclusion portion 22, and the drive terminals 25 </ b> A are drawn from the other side surface 202.
In the step-up semiconductor module 2 </ b> B, the element control terminal 23 </ b> B is led out from one side surface 201 of the element inclusion portion 22 and the other side surface 202 located on the opposite side of the one side surface 201. The pair of power supply terminals 24 </ b> B are drawn out from one side surface 201 of the element inclusion portion 22, and the intermediate terminal 25 </ b> B is drawn out from the other side surface 202.

  As shown in FIG. 6, the control substrate 31 in the control circuit unit 3 includes element control terminals 23A in the driving semiconductor elements 21A of the driving semiconductor modules 2A1 and 2A2, and elements in the boosting semiconductor element 21B of the boosting semiconductor module 2B. A control circuit for sending a control signal to the control terminal 23B at an appropriate timing is formed. The control circuit unit 3 includes a substrate inclusion portion 32 that encloses the substrate body portion 311 of the control substrate 31. A substrate control terminal 33 connected to each of the element control terminals 23A and 23B is drawn out from the control substrate 31 to the outside of the substrate inclusion portion 32. The substrate inclusion portion 32 is formed of an insulating mold resin that covers the substrate body portion 311 and is in thermal contact with the cooler 4.

  In addition, the element inclusion part 22 of each semiconductor module 2A1, 2A2, and 2B and the board | substrate inclusion part 32 of the control circuit part 3 should just be in thermal contact with the cooler 4. FIG. Further, the element inclusion part 22 and the cooler 4, and the substrate inclusion part 32 and the cooler 4 may be in direct contact, or may be in thermal contact with an insulating plate or the like interposed therebetween.

  As shown in FIG. 2, in the power conversion device 1, the element control terminals 23 </ b> A and 23 </ b> B are pulled out from the one side surface 201 and the other side surface 202 of the element inclusion portion 22 as the left and right side surfaces in the direction orthogonal to the stacking direction L. It is. Further, the board control terminal 33 is drawn out from the one side face 301 and the other side face 302 of the board inclusion part 32 as the left and right side faces in the direction orthogonal to the stacking direction L. The element control terminals 23A and 23B and the substrate control terminal 33 are connected to each other by connection members 6 having plate surfaces 601 arranged in parallel to the stacking direction L on both the left and right sides in the direction orthogonal to the stacking direction L. ing. Thereby, the element control terminals 23 </ b> A and 23 </ b> B and the substrate control terminal 33 can be connected by effectively utilizing the space in the power conversion device 1.

As shown in FIGS. 2 and 6, the connection member 6 is formed by providing a conductor portion 62 that connects the element control terminals 23 </ b> A and 23 </ b> B and the substrate control terminal 33 to a flexible insulating substrate 61. ing. 2 to 4, the conductor portion 62 is simply indicated by an arrow.
The board control terminals 33 are collectively provided in a protruding part 312 that protrudes from the board main body 311 to the side of the board main body 311. The protrusions 312 are formed to protrude from the substrate body 311 to the left and right ends in the direction orthogonal to the stacking direction L. The protruding portion 312 protrudes from one end in the direction orthogonal to the stacking direction L and the other end positioned 180 ° opposite to the one end in the direction orthogonal to the stacking direction L. Yes.
Further, the protruding portion 312 may protrude from one end portion in a direction orthogonal to the stacking direction L and an end portion at a 90 ° position different from the one end portion.

  As shown in FIGS. 3 and 4, the connection member 6 includes a connector portion 611 into which the protruding portion 312 is inserted, and an insertion hole 612 into which the element control terminals 23 </ b> A and 23 </ b> B are inserted. The conductor part 62 is formed so as to connect the connector part 611 and the insertion hole 612. With the configuration in which the connector portion 611 and the insertion hole 612 are provided in the connection member 6, the element control terminals 23 </ b> A and 23 </ b> B and the board control terminal 33 can be easily connected.

As shown in FIG. 1, each of the semiconductor modules 2A1, 2A2, and 2B is stacked in the stacking direction L by the element inclusion 22 being pressed by the pressing means 5 together with the semiconductor modules 2A1, 2A2, and 2B and the cooler 4. ing. In the control circuit unit 3, the substrate inclusion part 32 is pressed together with the semiconductor modules 2 </ b> A <b> 1, 2 </ b> A <b> 2, 2 </ b> B and the cooler 4 by the pressurizing means 5 and stacked in the stacking direction L.
The semiconductor modules 2A1, 2A2, 2B and the control circuit unit 3 are sandwiched between the coolers 4. That is, the semiconductor modules 2A1, 2A2, 2B and the control circuit unit 3 are sandwiched between the coolers 4 by being alternately arranged with the coolers 4. The control circuit unit 3 is stacked via a cooler 4 between the first driving semiconductor module 2A1 and the second driving semiconductor module 2A2. The control circuit unit 3 can also be stacked via the cooler 4 between the first driving semiconductor module 2A1 or the second driving semiconductor module 2A2 and the boosting semiconductor module 2B.

  In the power conversion device 1 of this example, from one side in the stacking direction L, the cooler 4, the first drive semiconductor module 2A1, the cooler 4, the control circuit unit 3, the cooler 4, and the second drive semiconductor. Module 2A2, cooler 4, boosting semiconductor module 2B, and cooler 4 are sequentially stacked. The positions of the first driving semiconductor module 2A1, the second driving semiconductor module 2A2, and the boosting semiconductor module 2B can be changed from each other.

  As shown in FIG. 1, in the power conversion device 1 of this example, the reactor 15, the filter capacitor 131 and the smoothing capacitor 16 are arranged in the stacking direction L together with the semiconductor modules 2 </ b> A <b> 1, 2 </ b> A <b> 2 and 2 </ b> B, the cooler 4 and the control circuit unit 3. Are stacked. In this example, the reactor 15 is stacked on the cooler 4 stacked on the boosting semiconductor module 2B, and the filter capacitor 131 and the smoothing capacitor 16 are stacked on the reactor 15. The reactor 15 is formed by being covered with an insulating mold resin, and the filter capacitor 131 and the smoothing capacitor 16 are integrally formed by being covered with an insulating mold resin.

As shown in FIGS. 1, 3, and 4, the pressurizing means 5 of the present example includes a semiconductor device 2 </ b> A <b> 1, 2 </ b> A <b> 2, 2 </ b> B, a cooler 4, and a reactor 15. The pressure plate 5 is used to sandwich the control circuit unit 3. The pressure elastic body 51 of this example is a rubber that can be elastically deformed and can generate a repulsive force. The pressure plate 5 is attached to the base member 52 on which the reactor 15, the filter capacitor 131, and the smoothing capacitor 16 are disposed by tightening the bolts 521. The pressure elastic body 51 can be an elastically deformable member such as a spring in addition to rubber.
Further, the pressure plate 5 can be attached by tightening the bolt 521 to the base member 52 without using the pressure elastic body 51. In the power converter 1, the semiconductor modules 2A1, 2A2, and 2B, the cooler 4, and the control circuit unit 3 are stacked and held in the stacking direction L without using the pressing plate 5 and the pressing elastic body 52. You can also

  As shown in FIG. 1, the cooler 4 is held by a pair of cooling pipes 42 disposed on both the left and right sides in the direction orthogonal to the stacking direction L. A refrigerant flow path 41 is formed in the cooler 4, and the refrigerant C flows through the refrigerant flow path 41 by a pair of cooling pipes 42. The cooling pipes 42 are arranged on the left and right sides of the direction orthogonal to the stacking direction L and orthogonal to the direction in which the element control terminals 23A and 23B and the substrate control terminal 33 are drawn out.

  As shown in FIGS. 3 and 4, the pressure elastic body 51, the semiconductor modules 2 </ b> A <b> 1, 2 </ b> A <b> 2, 2 </ b> B, the cooler 4, and the control circuit unit 3 are arranged between the pressure plate 5 and the reactor 15, and pressurization is performed. By tightening the plate 5 to the base member 52 with bolts 521, the semiconductor modules 2 </ b> A <b> 1, 2 </ b> A <b> 2, 2 </ b> B and the control circuit unit 3 are sandwiched between the coolers 4. Thereby, each semiconductor module 2A1, 2A2, 2B and the control circuit part 3 are being fixed to the base member 52 in the power converter device 1. FIG.

In the power converter 1, the element inclusion part 22, the cooler 4 of the semiconductor modules 2A1, 2A2 and 2B, and the substrate inclusion part 32 of the control circuit part 3 are laminated in the lamination direction L, and this lamination state is pressurized. Maintained by means 5. The control circuit unit 3 is stacked on the semiconductor modules 2A1, 2A2, and 2B and the cooler 4, so that no dead space is formed on both surfaces of the control circuit unit 3, and the size of the power conversion device 1 can be achieved. As small as possible.
In addition, since the control circuit unit 3 is stacked on the semiconductor modules 2A1, 2A2, and 2B and the cooler 4, a member for holding the control circuit unit 3 becomes unnecessary. The control circuit unit 3 is integrated with the semiconductor modules 2A1, 2A2, 2B and the cooler 4, so that the vibration resistance of the control circuit unit 3 can be ensured.
Further, the control circuit unit 3 is stacked on the semiconductor modules 2A1, 2A2, 2B and the cooler 4, so that the cooler 4 cools the semiconductor modules 2A1, 2A2, 2B and also the control circuit unit 3. be able to.

  The element control terminals 23A, 23B and the substrate control terminal 33 are connected in the stacking direction L by the connecting member 6 outside the position where the semiconductor modules 2A1, 2A2, 2B, the cooler 4, the control circuit unit 3 and the like are stacked. ing. The element control terminals 23A and 23B and the substrate control terminal 33 are connected by a conductor portion 62 provided on a flexible insulating substrate 61. Thereby, it is possible to prevent the power conversion device 1 from becoming large, and to easily connect the semiconductor modules 2A1, 2A2, and 2B stacked on each other to the control circuit unit 3. Further, the element control terminals 23A and 23B and the substrate control terminal 33 can be connected in as small a space as possible.

  Therefore, according to the power conversion device 1 of the present example, it is possible to ensure seismic resistance and heat resistance, and to achieve miniaturization, and the semiconductor modules 2A1, 2A2, 2B and the control circuit unit 3 stacked on each other. Can be easily connected.

  The substrate inclusion portion 32 of the control circuit portion 3 can be formed in a shape surrounding the substrate body portion 311 with a housing made of metal or resin, in addition to being formed of a mold resin covering the substrate body portion 311. In this case, the housing can be formed in a square tube shape having openings on both sides from which the substrate control terminal 33 is drawn. The casing made of metal can be formed as a die-cast product, and can be formed by assembling a metal frame. The housing made of resin can also be formed in a shape in which the substrate body 311 is sandwiched from both sides by a housing portion provided with reinforcing ribs.

DESCRIPTION OF SYMBOLS 1 Power converter 2A1, 2A2, 2B Semiconductor module 21A, 21B Semiconductor element 211 Element main body part 22 Element inclusion part 23A, 23B Element control terminal 3 Control circuit part 31 Control board 311 Substrate main part 32 Substrate inclusion part 33 Substrate control terminal 4 Cooler 5 Pressure means 6 Connection member

Claims (5)

The semiconductor element (21A, 21B) and an element inclusion part (22) that encloses the element main body part (211) of the semiconductor element (21A, 21B), and an element control terminal of the semiconductor element (21A, 21B) ( 23A, 23B) are pulled out to the outside of the element inclusion part (22), the semiconductor modules (2A1, 2A2, 2B),
A cooler (4) that contacts the semiconductor module (2A1, 2A2, 2B) and cools the semiconductor module (2A1, 2A2, 2B);
A control board (31) for controlling the operation of the semiconductor elements (21A, 21B), and a substrate inclusion part (32) for containing a substrate body part (311) of the control board (31), 31) a substrate control terminal (33) is pulled out of the substrate inclusion (32) and stacked in the stacking direction (L) of the semiconductor modules (2A1, 2A2, 2B) and the cooler (4). Control circuit part (3),
A connection member (6) for connecting the element control terminals (23A, 23B) and the substrate control terminal (33);
The element control terminals (23A, 23B) and the substrate control terminal (33) are drawn out in a direction perpendicular to the stacking direction (L),
The power converter (1), wherein the connecting member (6) connects the element control terminals (23A, 23B) and the substrate control terminal (33) in the stacking direction (L).   The connection member (6) is connected to the element control terminal (23A) with respect to an insulating substrate (61) having flexibility in which a plate surface (601) is arranged in parallel to the stacking direction (L). 23B) and the board control terminal (33), the power converter (1) according to claim 1, characterized in that a conductor (62) is provided. The board control terminal (33) is provided in a projecting part (312) projecting to the side of the board body part (311).
The connection member (6) has a connector part (611) into which the protruding part (312) is inserted, and an insertion hole (612) into which the element control terminal (23A, 23B) is inserted,
The power conversion device (1) according to claim 1 or 2, wherein the conductor portion (62) is formed to connect the connector portion (611) and the insertion hole (612). .   The substrate control terminal (33) and the element control terminal (23A, 23B) are drawn to the left and right sides in a direction orthogonal to the stacking direction (L), and with respect to the stacking direction (L). The power conversion device (1) according to any one of claims 1 to 3, wherein the power conversion device (1) is connected on both right and left sides in an orthogonal direction.   The element inclusion part (22) of the semiconductor module (2A1, 2A2, 2B), the cooler (4), and the substrate inclusion part (32) of the control circuit part (3) are laminated in the lamination direction (L). The power converter (1) according to any one of claims 1 to 4, further comprising a pressurizing means (5) for pressurizing the applied state.

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