JP2013058623A - Manufacturing method of semiconductor device - Google Patents

Abstract

The manufacturing efficiency of a semiconductor device is improved.
The singulation process of dividing a wiring board (cutting object) 20 by a dicing blade 40 while being fixed on a stage (processing table) 42 includes the following processes. In the substrate cutting process, the dicing blade 40 is run while cutting the dicing area while supplying the cooling liquid 45a from the nozzle 45 disposed in the case 44 covering the dicing blade 40 and the cleaning liquid 46a from the nozzle 46, respectively. At this time, the foreign matter removing nozzle 48 disposed at a position away from the case 44 is stopped. Further, in the foreign matter removing step performed after the substrate cutting step, the stage 42 is moved while supplying the liquid from the nozzle 48 toward the wiring substrate 20.
[Selection] Figure 34

Description

  The present invention relates to a semiconductor device manufacturing technique, and more particularly to a technique that is effective when applied to a semiconductor device that cuts a substrate on which a semiconductor chip is mounted with a dicing blade.

  Japanese Patent Laid-Open No. 2007-83392 (Patent Document 1) discloses a singulation device (cutting device) for cutting with a rotary blade in a state where a semiconductor device having a semiconductor chip mounted on a wiring board is fixed to a suction jig. Is described.

JP 2007-83392 A

  There is a semiconductor device manufacturing method in which a semiconductor chip is mounted in each of a plurality of device regions of a wiring board (interposer), the semiconductor chip is sealed, and then divided into device regions to obtain a plurality of semiconductor devices. In the singulation process for dividing each device region, there is a technique of applying a method of cutting using a dicing blade (rotary blade) as described in Patent Document 1, for example. The inventor of the present application has studied the singulation process using a dicing blade and found the following problems.

  That is, when the wiring board is cut with a dicing blade, hook-shaped foreign matters and cut ends of the wiring substrate are generated, and these foreign matters are found to cause problems in the manufacturing process after the singulation process. It was. In the singulation process using the dicing blade, the dicing blade enters the cutting area (dicing area) of the cutting object with the cutting object placed (fixed) on the dicing stage. At this time, the members in the cutting region of the object to be cut are cut by a dicing blade, and most of them are discharged as fine cutting waste, but a part remains in the vicinity of the object to be cut as a bowl-shaped foreign object. When the inventor of the present application investigated this bowl-shaped foreign material, it was found that the material originated from the material (insulating layer material) constituting the insulating layer of the wiring board. In addition, a frame portion arranged so as to surround the plurality of device regions is required around the plurality of device regions of the wiring board. After the singulation process, this frame portion is used as an end material on the dicing stage. Remains.

  Such a bowl-shaped foreign material or mill ends cause a problem in the manufacturing process after the singulation process. For example, when the separated assembly (semiconductor device, semiconductor package) is sucked and transported by a jig, if the foreign matter or the end material is interposed between the jig and the assembly, the sucked and held can be held. It becomes difficult (causes poor adsorption). Even if the assembly can be adsorbed, the foreign matter and the end material are transported to the next process together with the assembly, causing a problem in the next process. Even if the assembly can be adsorbed and foreign matter or end material is not transported to the next process, for example, if the foreign matter or end material remains on the dicing stage, there is a problem in cutting the next object to be cut. Cause the occurrence.

  As described above, the trapezoidal foreign matter and scraps generated in the singulation process using the dicing blade cause defects in the manufacturing process after the singulation process. From the viewpoint of performing, it is preferable to reliably remove the foreign matter and the end material.

  The present invention has been made in view of the above problems, and an object thereof is to provide a technique for improving the manufacturing efficiency of a semiconductor device.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

  That is, in the method for manufacturing a semiconductor device which is one embodiment of the present invention, a cutting object including a wiring board on which a semiconductor chip is mounted in each of a plurality of device regions is fixed on a processing table via a jig. The process of dividing into pieces by a dicing blade is included. Further, in the singulation step, a cutting step of cutting the cutting region by running the dicing blade in a state where there is a space for inserting the dicing blade between the cutting region of the object to be cut and the jig. Is included. In addition, after the cutting step, a foreign matter removing step of moving the processing table while supplying liquid toward the cutting object from a nozzle disposed at a position away from the case covering the dicing blade is included. Here, in the cutting step, the supply of the liquid from the nozzle is stopped.

  The effects obtained by typical ones of the inventions disclosed in the present application will be briefly described as follows.

  That is, according to one aspect of the present invention, it is possible to prevent or suppress substrate cutting defects.

It is a top view which shows the surface of the semiconductor device of one embodiment of this invention. It is a top view which shows the back surface of the semiconductor device shown in FIG. FIG. 2 is a plan view showing an internal structure on the surface side of the semiconductor device shown in FIG. 1. It is sectional drawing along the AA line of FIG. It is a top view which shows the surface side of the wiring board shown in FIG. FIG. 6 is an enlarged plan view of a portion B shown in FIG. 5. It is an expanded sectional view along CC line of FIG. FIG. 5 is an explanatory diagram showing an assembly flow of the semiconductor device shown in FIGS. It is a top view which shows the whole structure of the wiring board prepared by the board | substrate preparation process shown in FIG. FIG. 10 is an enlarged plan view of a D part shown in FIG. 9. It is an enlarged plan view which shows the back surface side of the wiring board shown in FIG. It is an expanded sectional view along the EE line of FIG. It is an enlarged plan view which shows the state which mounted the semiconductor chip on the wiring board shown in FIG. It is an expanded sectional view along the FF line of FIG. FIG. 14 is an enlarged plan view showing a state in which the semiconductor chip and the wiring board shown in FIG. 13 are electrically connected by wire bonding. It is an expanded sectional view which shows the state which electrically connected the semiconductor chip and wiring board shown in FIG. 14 by wire bonding. It is an expanded sectional view which shows the state which clamped the wiring board shown in FIG. 16 with the shaping die. It is an expanded sectional view which shows the state which supplied sealing resin in the cavity shown in FIG. FIG. 16 is an enlarged plan view showing a state where the semiconductor chip and the wire shown in FIG. 15 are sealed with resin. It is sectional drawing along the FF line of FIG. FIG. 21 is an enlarged cross-sectional view illustrating a state in which a plurality of solder balls serving as external electrodes (external connection terminals) of the semiconductor device are formed (joined) on the back surface of the wiring board illustrated in FIG. 20. It is explanatory drawing which shows the detailed flow of the individualization process shown in FIG. It is explanatory drawing which shows schematic structure of the apparatus (dicing apparatus) which performs the individualization process shown in FIG. It is an enlarged plan view which shows the upper surface of the dicing jig | tool shown in FIG. FIG. 25 is an enlarged plan view of a G part in FIG. 24. It is an expanded sectional view which shows the state which has arrange | positioned the wiring board shown in FIG. 21 on the dicing jig | tool shown in FIG. It is a top view which shows the detail of the dicer part shown in FIG. It is explanatory drawing which shows typically the cross-section along the HH line | wire of FIG. It is an expanded sectional view which shows the state which cut | disconnected the wiring board shown in FIG. 28 along a dicing area | region. It is explanatory drawing which shows the structure of the dicing blade periphery shown in FIG. It is explanatory drawing which shows typically the state which has moved the stage shown in FIG. 28, and has cut | disconnected the wiring board. FIG. 29 is an enlarged cross-sectional view illustrating a state in which the wiring board and the dicing jig are held by the transport unit in the discharge unit illustrated in FIG. 28. FIG. 33 is an enlarged cross-sectional view showing a state in which a semiconductor device separated from the dicing jig shown in FIG. 32 is picked up. It is an expanded sectional view shown about operation | movement in the dicing apparatus at the time of the X direction cutting process or Y direction cutting process shown in FIG. FIG. 23 is an enlarged cross-sectional view showing an operation in the dicing apparatus during the foreign substance cleaning step shown in FIG. 22. FIG. 36 is a cross-sectional view showing the structure of the foreign matter removing nozzle shown in FIG. 35. FIG. 36 is a top view of the foreign matter removing nozzle shown in FIG. 35. FIG. 5 is a cross-sectional view illustrating a semiconductor device that is a modification example of FIG. 4. It is an expanded sectional view which shows the board | substrate cutting process which is a modification with respect to FIG. It is an expanded sectional view which expands and shows the cutting part periphery shown in FIG. It is sectional drawing along the JJ line of FIG. FIG. 25 is a plan view showing a state in which a wiring board is bonded and fixed to a dicing tape which is a modification of the dicing jig shown in FIG. 24. FIG. 43 is a cross-sectional view taken along line KK in FIG. 42. FIG. 44 is an enlarged cross-sectional view showing the periphery of a dicing area when cutting the wiring board in a state of being fixed to the tape material shown in FIG. 43. FIG. 6 is a cross-sectional view showing a semiconductor device that is another modification example of FIG. 4. It is explanatory drawing which shows the modification with respect to FIG. It is explanatory drawing which shows the modification with respect to FIG.

(Description format, basic terms, usage in this application)
In the present application, the description of the embodiment will be divided into a plurality of sections for convenience, if necessary, but these are not independent from each other unless otherwise specified. Regardless of the front and rear, each part of a single example, one is a part of the other, or a part or all of the modifications. In principle, repeated description of similar parts is omitted. In addition, each component in the embodiment is not indispensable unless specifically stated otherwise, unless it is theoretically limited to the number, and obviously not in context.

  Similarly, in the description of the embodiment, etc., regarding the material, composition, etc., “X consisting of A” etc. is an element other than A unless specifically stated otherwise and clearly not in context. It does not exclude things that contain. For example, as for the component, it means “X containing A as a main component”. For example, “silicon member” is not limited to pure silicon, but includes a SiGe (silicon-germanium) alloy, other multi-component alloys containing silicon as a main component, and other additives. Needless to say, it is also included. Moreover, even if it says gold plating, Cu layer, nickel / plating, etc., unless otherwise specified, not only pure materials but also members mainly composed of gold, Cu, nickel, etc. Shall be included.

  In addition, when a specific number or quantity is mentioned, a numerical value exceeding that specific number will be used unless specifically stated otherwise, unless theoretically limited to that number, or unless otherwise clearly indicated by the context. There may be a numerical value less than the specific numerical value.

  Moreover, in each figure of embodiment, the same or similar part is shown with the same or similar symbol or reference number, and description is not repeated in principle.

  In the accompanying drawings, hatching or the like may be omitted even in a cross section when it becomes complicated or when the distinction from the gap is clear. In relation to this, when it is clear from the description etc., the contour line of the background may be omitted even if the hole is planarly closed. Furthermore, even if it is not a cross section, it may be hatched to clearly indicate that it is not a void.

<Semiconductor device>
First, the outline of the structure of the semiconductor device according to the present embodiment will be described. FIG. 1 is a plan view showing the surface of the semiconductor device of the present embodiment, and FIG. 2 is a plan view showing the back surface of the semiconductor device shown in FIG. FIG. 3 is a plan view showing the internal structure of the surface side of the semiconductor device shown in FIG. 4 is a cross-sectional view taken along the line AA in FIG.

  In this embodiment, the semiconductor chip 2 is mounted on a wiring board (substrate) 10, and the resin mold type in which the semiconductor chip 2 is sealed with a resin body (sealing body) 4 formed on the wiring board 10. The semiconductor device 1 will be described.

  The semiconductor device 1 includes a semiconductor chip 2 mounted on the surface 10a of the wiring substrate 10, a plurality of conductive members (wires 3 in this embodiment) that electrically connect the semiconductor chip 2 and the wiring substrate 10, and a semiconductor chip. 2 and a resin body 4 for sealing a plurality of wires 3, and a solder ball (solder material) 5 formed on the back surface 10 b side of the wiring substrate 10 and electrically connected to the semiconductor chip 2. . The solder balls 5 are external electrodes (external connection terminals) for electrically connecting the semiconductor device 1 and the mounting board (motherboard).

  The mounting method of the semiconductor chip 2 on the wiring substrate 10 is a face-down mounting in which the main surface 2a side on which the plurality of pads 2c are formed is opposed to the surface 10a of the wiring substrate 10 and is mounted via a plurality of bump electrodes. A system (flip chip mounting system) and a face-up mounting system in which the back surface 2b located on the opposite side of the main surface 2a is mounted facing the front surface 10a as shown in FIG. In this embodiment, a face-up mounting method is used, and for example, a wire 3 is used as a conductive member that electrically connects the semiconductor chip 2 and the wiring board 10 as shown in FIG. The face-up mounting method has an advantage that the manufacturing cost can be reduced as compared with the face-down mounting method.

  In the face-up mounting method, the semiconductor chip 2 and the wiring substrate 10 are electrically connected by a wire bonding method. That is, a plurality of pads (electrodes, chip electrodes) 2c formed on the main surface 2a of the semiconductor chip 2 and the periphery of the semiconductor chip 2 in a plan view so as to be exposed on the surface 10a side of the wiring substrate 10 are arranged. A plurality of bonding leads (terminals, bonding pads) 11 are electrically connected via a plurality of wires 3. In the wire bonding method, since the joint portion of the wire 3 (joint portion with the pad 2c and the bonding lead 11) can be easily visually recognized, even if a connection failure occurs, this can be easily found. However, in a state where the wire 3 is exposed, when the wire 3 is deformed due to an impact or the like, it causes a short circuit or the like, and thus it is necessary to prevent deformation of the plurality of wires 3. Therefore, as shown in FIG. 4, the resin body 4 is formed on the surface 10 a of the wiring substrate 10, and the semiconductor chip 2 and the wire 3 are sealed, thereby protecting the wire 3.

  A plurality of solder balls 5 are formed on the back surface 10 b located on the opposite side of the front surface 10 a of the wiring substrate 10. The plurality of solder balls 5 are electrically connected to the bonding leads 11 formed on the surface 10 a side via the plurality of wirings 12 formed on the wiring substrate 10. For this reason, when the semiconductor device 1 is mounted on a mounting board (not shown), the solder balls 5 are joined and electrically connected to terminals (not shown) of the mounting board. That is, the solder ball 5 becomes an external electrode (external connection terminal) of the semiconductor device 1.

  Further, as shown in FIG. 2, the plurality of solder balls 5 are arranged in a matrix on the back surface 10 b side of the wiring substrate 10. That is, the semiconductor device 1 is a so-called area array type semiconductor device in which a plurality of external electrodes are arranged in a matrix on the back surface (mounting surface) 10 b side of the wiring substrate 10. The area array type semiconductor device can effectively utilize the back surface 10b side of the wiring substrate 10 as a space for arranging external electrodes. For this reason, for example, the number of external electrodes is increased as compared with a semiconductor device using a lead frame as a base material on which a semiconductor chip is mounted, such as QFP (Quad Flat Package) and QFN (Quad Flat Non-leaded Package). This is advantageous in that

  As the area array type semiconductor device, a BGA (Ball Grid Array) type semiconductor device in which solder balls 5 are attached as external electrodes, as in the semiconductor device 1 of the present embodiment, may be used. There is also an LGA (Land Grid Array) type semiconductor device in which a land 13 for attaching a joining member is exposed. Further, a solder material may be applied thinly on the exposed surface of the land 13 even in the LGA type for easy mounting on a mounting board (not shown).

  The solder ball 5 of the present embodiment is made of so-called lead-free solder that does not substantially contain lead (Pb). For example, only tin (Sn), tin-bismuth (Sn-Bi), or tin-copper- For example, silver (Sn—Cu—Ag). Here, the lead-free solder means a lead (Pb) content of 0.1 wt% or less, and this content is defined as a standard of the RoHs (Restriction of Hazardous Substances) directive. Hereinafter, in the present embodiment, when a solder or solder ball is described, it indicates a lead-free solder unless otherwise specified.

<Wiring board>
Next, details of the wiring board 10 shown in FIGS. 2 to 4 will be described. 5 is a plan view showing the surface side of the wiring board shown in FIG. 3, FIG. 6 is an enlarged plan view of a portion B shown in FIG. 5, and FIG. 7 is an enlarged cross-sectional view taken along line CC in FIG. .

  As shown in FIG. 7, the wiring board 10 includes an upper surface (main surface) 14a, a lower surface (back surface) 14b positioned on the opposite side of the upper surface 14a, and a side surface 14c positioned between the upper surface 14a and the lower surface 14b (see FIG. 4). ) Having an insulating layer (core layer) 14. The insulating layer 14 is made of, for example, a prepreg obtained by impregnating glass fiber or carbon fiber with a resin. The upper surface 14a and the lower surface 14b of the insulating layer 14 are covered with insulating films (solder resist film, protective film) 16 and 17, respectively. The insulating films 16 and 17 are protective films that are formed so as to cover the plurality of wirings 12 formed on the upper surface 14a and the lower surface 14b of the insulating layer 14 and prevent a short circuit or disconnection between the plurality of wirings 12. Accordingly, the insulating film (upper surface side insulating film) 16 is formed on the front surface 10 a that is the uppermost surface of the wiring substrate 10, and the insulating film (lower surface side insulating film) 17 is formed on the rear surface 10 b that is the lowermost surface of the wiring substrate 10. Has been.

  In the present application, the upper surface of the insulating film 16 that is the uppermost surface of the wiring substrate 10 and the upper surface 14a of the insulating layer 14 on which the uppermost wiring of the wiring substrate 10 is formed will be described separately. That is, as shown in FIG. 7, the surface 10 a of the wiring substrate 10 refers to the upper surface (outermost surface) of the insulating film 16 disposed on the uppermost layer of the wiring substrate 10, and the upper surface 14 a of the insulating layer inside the wiring substrate 10. It is distinguished from Similarly, the back surface 10b of the wiring substrate 10 refers to the lower surface (outermost surface) of the insulating film 17 disposed in the lowermost layer of the wiring substrate 10, and is distinguished from the lower surface 14b of the insulating layer inside the wiring substrate 10.

  As shown in FIG. 5, the wiring board 10 forms a quadrangle in plan view. A chip mounting area 10c for mounting the semiconductor chip 2 (see FIG. 3) is provided on the surface 10a of the wiring board 10. In the present embodiment, the chip mounting area 10c forms a quadrangle along the outer shape of the wiring board 10 in plan view, and is disposed, for example, at the center of the surface 10a. A plurality of bonding leads (terminals and bonding pads) 11 are formed on the upper surface 14a around the chip mounting area 10c. The plurality of bonding leads 11 are made of, for example, copper (Cu), and a plating film (not shown) is formed on the surface thereof. In the present embodiment, the plating film is, for example, a laminated film in which a gold (Au) film is laminated on a nickel (Ni) film.

  Further, as shown in FIG. 5, the plurality of bonding leads 11 are arranged along each side of the chip mounting region 10c. In the present embodiment, a plurality of bonding leads 11 are arranged in one row along each side of the chip mounting region 10c (in other words, each side of the semiconductor chip 2). However, the arrangement of the bonding leads is not limited to the mode shown in FIG. 5. For example, the bonding leads may be arranged in a plurality of rows along each side of the chip mounting region 10 c (in other words, each side of the semiconductor chip 2). . In this case, an increase in the arrangement space of the bonding leads 11 can be suppressed, and a large number of bonding leads 11 can be arranged. Therefore, the present invention is effective when applied to a small-sized, narrow-pitch, multi-pin semiconductor device. .

  Each bonding lead 11 is exposed from the insulating film 16 in an opening 16a formed in the insulating film 16 covering the upper surface 14a of the insulating layer 14 as shown in FIG. In the present embodiment, as shown in FIG. 6, an opening 16 a smaller than the bonding lead 11 is formed at a position overlapping the bonding lead 11 of the insulating film 16, and a part of the bonding lead 11 is exposed.

  Each bonding lead 11 is electrically connected to a land (terminal, electrode) 13 formed on the lower surface 14 b of the insulating layer 14 via wiring 12 formed on a plurality of wiring layers of the wiring substrate 10. . Specifically, the wiring board 10 has a plurality of wiring layers. 4 and 7 show two wiring layers including a wiring layer formed on the upper surface 14a and a wiring layer formed on the lower surface 14b. In each wiring layer, a plurality of wirings 12 made of, for example, copper (Cu) are formed, and one surface (in this embodiment, the upper surface 14a) of the upper surface 14a and the lower surface 14b from the other surface (the main surface) In the embodiment, the wiring 12 of each wiring layer is electrically connected through the wiring (in-via wiring, interlayer wiring) 15 in the via (hole) 15a formed toward the lower surface 14b) side. The via 15 a is formed so as to penetrate from the upper surface 14 a to the lower surface 14 b, and electrically connects the wiring 12 a formed on the upper surface 14 a and the wiring 12 b formed on the lower surface 14 b via the wiring 15. . As shown in FIG. 7, the bonding lead 11 formed on the upper surface 14a of the insulating layer 14 is formed integrally with a plurality of wirings (uppermost layer wirings) 12a formed on the upper surface 14a. On the other hand, the land 13 formed on the lower surface 14b of the insulating layer 14 is formed integrally with the wiring (lowermost layer wiring) 12b formed on the lower surface 14b. That is, the conductive path connected to the plurality of bonding leads 11 is drawn out to the lower surface 14 b side via the wirings 12 and 15 and is electrically connected to the plurality of lands 13. Each land 13 is exposed from the insulating film 17 in the opening 17a formed in the insulating film 17 covering the lower surface 14b of the insulating layer 14 as shown in FIG. In the present embodiment, an opening 17a smaller than the land 13 is formed at a position overlapping the land 13 of the insulating film 17, and a part of the land 13 is exposed. As shown in FIG. 4, a plurality of solder balls 5, which are external electrodes, are joined to the plurality of lands 13, so that the plurality of bonding leads 11 are electrically connected to the plurality of solder balls 5.

  The plurality of lands 13 are made of, for example, copper (Cu), and a plating film (not shown) is formed on the surface thereof. In the present embodiment, the plating film is, for example, a laminated film in which a gold (Au) film is laminated on a nickel (Ni) film. Although not shown, the plurality of lands 13 are arranged in a matrix (array or matrix) on the lower surface 14b in the same manner as the solder balls 5 shown in FIG. In other words, the solder balls 5 are joined to the exposed portions of the plurality of lands 13 arranged in a matrix.

  6 and 7 show the wiring 12 extending from the bonding lead 11 toward the outer peripheral side of the wiring substrate 10 (left side with respect to the paper surface on which FIG. 6 or FIG. 7 is described). The wiring 12 is a power supply line 12c when the wiring 12 and the bonding lead 11 are formed on the upper surface 14a of the insulating layer 14 (FIG. 7) by an electrolytic plating method.

  In the present embodiment, a wiring board having two wiring layers in which the wiring 12 is formed on the upper surface 14a and the lower surface 14b of the insulating layer 14 is shown. However, the number of wiring layers of the wiring board 10 is not limited to two. For example, a so-called multilayer wiring board in which a plurality of wiring layers (wirings 12) are formed in the insulating layer 14 can be used. In this case, by further forming a wiring layer between the uppermost wiring layer and the lowermost wiring layer, it is possible to increase the space for routing the wiring, which is particularly effective when applied to a semiconductor device having a large number of terminals. is there.

<Semiconductor chip>
Next, the semiconductor chip 2 mounted on the wiring board 10 will be described. As shown in FIG. 4, the semiconductor chip 2 of the present embodiment includes a main surface (first main surface) 2a, a back surface (second main surface) 2b located on the opposite side of the main surface 2a, and the main surface 2a It has a side surface located between the back surface 2b. As shown in FIG. 3, the planar shape of the semiconductor chip 2 (the shape of the main surface 2a and the back surface 2b) is substantially rectangular.

  On the main surface 2a of the semiconductor chip 2, a plurality of pads (electrodes, chip electrodes) 2c are formed. The plurality of pads 2 c are arranged on the peripheral edge side on the main surface 2 a along each side of the semiconductor chip 2.

  A plurality of semiconductor elements (circuit elements) such as diodes and transistors are formed on the main surface 2a of the semiconductor chip 2, and a plurality of wirings (wiring layers) (not shown) formed on the semiconductor elements are provided. Each is electrically connected to the pad 2c. Thus, the semiconductor chip 2 constitutes an integrated circuit by a plurality of semiconductor elements formed on the main surface 2a and wirings that electrically connect the plurality of semiconductor elements.

  In addition, the base material (semiconductor substrate) having the main surface 2a which is a semiconductor element formation surface of the semiconductor chip 2 is made of, for example, silicon (Si). In addition, a passivation film (not shown) that is an insulating film is formed on the outermost surface on the main surface 2a, and each surface of the plurality of pads 2c is insulated in the opening formed in the passivation film. Exposed from the membrane.

  The pad 2c is made of metal, and in this embodiment, is made of, for example, aluminum (Al). Further, a plating film is formed on the surface of the pad 2c. In the present embodiment, for example, a multilayer plating film having a multilayer structure in which a gold (Au) film is formed via a nickel (Ni) film is used. is there.

  In the present embodiment, the semiconductor chip 2 is mounted by a so-called face-up mounting method in which the semiconductor chip 2 is mounted on the chip mounting region 10c with the back surface 2b facing the front surface 10a of the wiring board 10. The semiconductor chip 2 is fixed on the surface 10a of the chip mounting area 10c through the adhesive material 6. The adhesive 6 is not particularly limited as long as it can firmly fix the semiconductor chip 2 to the surface 10a of the wiring board 10, but in the present embodiment, for example, an epoxy-based thermosetting resin is used.

  Further, as shown in FIGS. 3 and 4, the semiconductor chip 2 is electrically connected to the wiring substrate 10 through a plurality of wires 3. Specifically, one end of the wire 3 is connected to the pad 2 c on the main surface 2 a of the semiconductor chip 2, and the other is connected to the bonding lead 11 of the wiring substrate 10. In the present embodiment, the wire 3 is made of gold (Au), and is bonded to the pad 2c of the semiconductor chip 2 and the gold plating film formed on the surface of the bonding lead 11 of the wiring substrate 10 via Au—Au bonding. ing.

<Resin body>
Next, the resin body 4 that seals the semiconductor chip 2, the plurality of wires 3, and the plurality of bonding leads 11 will be described. As shown in FIG. 4, the resin body 4 of the present embodiment is formed on the surface 10 a of the wiring substrate 10 and seals the semiconductor chip 2, the plurality of wires 3, and the plurality of bonding leads 11. The resin body 4 is formed, for example, by adding a filler material such as silica to an epoxy thermosetting resin and sealing the semiconductor chip 2 and the plurality of wires 3 and then curing them.

  As will be described in detail later, the semiconductor device 1 of the present embodiment is a semiconductor device manufactured by a so-called MAP (Mold Array Package) method in which a plurality of device regions are collectively sealed with a single cavity. . For this reason, the entire surface 10 a of the wiring board 10 is covered with the resin body 4.

<Manufacturing process of semiconductor device>
Next, the manufacturing process of the semiconductor device 1 shown in FIGS. 1 to 4 will be described. The semiconductor device 1 in the present embodiment is manufactured along the assembly flow shown in FIG. FIG. 8 is an explanatory diagram showing an assembly flow of the semiconductor device shown in FIGS. Details of each step will be described below with reference to FIGS.

1. Substrate Preparation Step First, as a substrate preparation step (S1) shown in FIG. 8, a wiring substrate 20 as shown in FIG. 9 is prepared. 9 is a plan view showing the entire structure of the wiring board prepared in the board preparation step shown in FIG. 8, FIG. 10 is an enlarged plan view of a portion D shown in FIG. 9, and FIG. 11 is the back side of the wiring board shown in FIG. FIG. FIG. 12 is an enlarged cross-sectional view along the line EE in FIG.

  As shown in FIG. 9, the wiring substrate (substrate) 20 prepared in this step includes a plurality of device regions 20a inside a frame portion (frame body) 20b. Specifically, a plurality of device regions 20a are arranged in a matrix. The number of device regions 20a is not limited to the mode shown in FIG. 9, but the wiring board 20 of the present embodiment has, for example, 112 device regions arranged in a matrix (7 rows × 16 columns in FIG. 9). 20a. That is, the wiring board 20 is a so-called multi-piece board having a plurality of device regions 20a.

  Each device region 20a corresponds to the wiring substrate 10 shown in FIG. 5, and each member of the wiring substrate 10 described with reference to FIGS. 5 to 7 is formed. For example, as shown in FIG. 10, on the surface 10a of each device region 20a, a chip mounting region 10c and a plurality of bonding leads (terminals, bondings) arranged around the chip mounting region 10c and exposed from the insulating film 16 are arranged. Pad) 11 is formed. As shown in FIG. 11, on the back surface 10b of the wiring board 20, a plurality of lands 13 exposed from the insulating film 17 are arranged in a matrix in each device region 20a.

  In addition, around each device region 20a (between adjacent device regions among the plurality of device regions 20a), dicing is a region where the wiring substrate 20 is to be cut in the singulation step (S7) shown in FIG. A region (dicing line, cutting region) 20c is arranged. As shown in FIG. 9, the dicing area 20c is arranged so as to surround each device area 20a between the adjacent device areas 20a and between the frame portion 20b and the device area 20a. Each device region 20a has, for example, a quadrangle with a side length of 5 mm to 20 mm. Since the dicing area 20c is arranged around each of the plurality of device areas 20a forming a quadrangle, for example, as shown in FIG. 9, the wiring board 20 includes a plurality of dicing areas 20c1 extending along the X direction and the X direction. And a plurality of dicing regions 20c2 extending along the Y direction intersecting (orthogonal in FIG. 9). The plurality of device regions 20a are partitioned by intersecting the dicing region 20c1 and the dicing region 20c2 in a lattice pattern. Further, the width of the dicing region 20c forming the frame shape is, for example, 200 μm to 400 μm.

  Here, the dicing region 20c is a region to be cut by a dicing blade (rotating blade) in the individualization step (S7) described later. In the individualization step, the dicing region 20c is a region in the dicing region 20c. A part is cut. Further, in consideration of the alignment accuracy between the dicing blade and the wiring substrate 20 and the thermal influence during the cutting process, the width of the dicing region 20c is wider than the width of the dicing blade. For this reason, the uncut portion of the dicing region 20c may remain on the peripheral edge of the wiring substrate 10 (see FIG. 1) of the completed semiconductor device 1 (see FIG. 1).

  The wiring board 20 shown in FIGS. 9-12 is manufactured as follows, for example. First, an insulating layer 14 as a core material is prepared, and vias (holes, through holes) 15a are formed from the upper surface 14a to the lower surface 14b as shown in FIG. 12, and then a conductor is embedded in the via 15a. A wiring 15 is formed.

  Next, wiring patterns are formed on the upper surface 14a and the lower surface 14b of the insulating layer 14, respectively. Specifically, a plurality of wirings 12 and a plurality of bonding leads 11 are formed on the upper surface 14a of the insulating layer 14, and a plurality of wirings 12 and a plurality of lands 13 are formed on the lower surface 14b. For example, the wiring pattern is formed by electrolytic plating using a semi-additive method.

  Next, an insulating film 16 covering the upper surface 14a of the insulating layer 14 and an insulating film 17 covering the lower surface 14b are formed. The insulating films 16 and 17 are formed (covered) so as to cover the wiring 12 formed on the upper surface 14a or the lower surface 14b of the insulating layer 14 and cured. For this reason, the surfaces of the insulating films 16 and 17 have irregularities following the shape of the wiring 12. That is, the flatness of the surfaces of the insulating films 16 and 17 is lower than the flatness of the upper surface 14 a or the lower surface 14 b of the insulating layer 14.

  Next, an opening 16a is formed in the insulating film 16, and an opening 17a is formed in the insulating film 17, and the plurality of bonding leads 11 and the plurality of lands 13 are exposed. The openings 16a and 17a are formed by etching, for example.

  Next, an etching process is performed on the dicing region 20c, and the insulating films 16 and 17 and the wiring 12 (feeding line 12c) in the dicing region 20c are removed. Thereby, the opening grooves 16b and 17b shown in FIG. 12 are formed in the dicing region 20c, and the upper surface 14a or the lower surface 14b of the insulating layer 14 is exposed from the insulating films 16 and 17. The opening grooves 16b and 17b are formed along the dicing region 20c. By removing the wiring 12 (feeding line 12c) in the dicing region 20c, the bonding leads 11 in the device region 20a are electrically connected to each other. To be separated. In addition, the lands 13 in the device region 20a are also electrically separated. Therefore, an electrical test such as a continuity test can be performed on each device region 20a of the wiring board 20. However, as a modification to the present embodiment, etching for forming the opening grooves 16b and 17b is not performed, and the wiring 12 (feeding line 12c) in the dicing region 20c and the insulating films 16 and 17 covering the wiring 12 are left. It can also be subjected to a die bonding process in a state. In this case, in the individualization process (substrate cutting process) described later, in addition to the insulating layer 14 in the dicing area 20c, the wiring 12 (feeding line 12c) in the dicing area 20c and the insulating films 16 and 17 covering the wiring 12 are provided. On the other hand, cutting is performed. As described above, when the etching for forming the opening grooves 16b and 17b is omitted, it is difficult to conduct an electrical test for each device region 20a when the wiring board 20 is completed, but the manufacturing process should be simplified. Can do. Therefore, when the number of terminals of the wiring board 20 is small or the wiring structure is simple, it is preferable from the viewpoint of improving manufacturing efficiency.

2. Semiconductor Chip Preparation Step Further, as the semiconductor chip preparation step (S2) shown in FIG. 8, the semiconductor chip 2 shown in FIG. 3 is prepared. In this step, for example, a semiconductor wafer made of a plurality of semiconductor elements and a wiring layer electrically connected thereto is prepared on the main surface side of a semiconductor wafer made of silicon (not shown). Thereafter, a dicing blade is run along the dicing line of the semiconductor wafer (not shown) to cut the semiconductor wafer, thereby obtaining a plurality of semiconductor chips 2 shown in FIG.

3. Die Bonding Step Next, the die bonding step (S3) shown in FIG. 8 will be described. 13 is an enlarged plan view showing a state in which a semiconductor chip is mounted on the wiring board shown in FIG. 10, and FIG. 14 is an enlarged cross-sectional view taken along line FF in FIG.

  In this step, the semiconductor chip 2 is mounted (adhered) on the chip mounting region 10c (chip mounting step). As shown in FIG. 14, in the present embodiment, the semiconductor chip 2 is mounted on the chip mounting area 10c via the adhesive 6 so that the back surface 2b of the semiconductor chip 2 faces the front surface 10a of the chip mounting area 10c (face). Up implementation).

  In the present embodiment, for example, the semiconductor chip 2 is mounted via an adhesive 6 that is an epoxy thermosetting resin. The adhesive 6 is a paste that has fluidity before being cured (thermoset). It is a material. Thus, when using a paste material as a die-bonding material, first, the adhesive material 6 is apply | coated on the chip | tip mounting area | region 10c, and the back surface 2b of the semiconductor chip 2 is adhere | attached on the surface 10a of the wiring board 20 after that. Then, after bonding, when the adhesive 6 is cured (for example, heat treatment is performed), the semiconductor chip 2 is fixed on the chip mounting region 10c via the adhesive 6 as shown in FIG. In the present embodiment, an embodiment in which a paste material made of a thermosetting resin is used as the adhesive 6 has been described, but various modifications can be applied. For example, instead of a paste material, an adhesive material, which is a tape material (film material) having adhesive layers on both sides, is attached in advance to the back surface 2b of the semiconductor chip 2, and the semiconductor chip 2 is attached to the chip mounting region via the tape material. It may be mounted on 10c.

4). Wire Bonding Step Next, the wire bonding step (S4) shown in FIG. 8 will be described. FIG. 15 is an enlarged plan view showing a state in which the semiconductor chip and the wiring board shown in FIG. 13 are electrically connected by wire bonding, and FIG. 16 is a diagram showing an electrical connection between the semiconductor chip and the wiring board shown in FIG. It is an expanded sectional view which shows the state connected to.

  In this step, as shown in FIGS. 15 and 16, the wiring substrate 20 and the plurality of semiconductor chips 2 are electrically connected through the plurality of wires 3, respectively. Specifically, a plurality of pads 2 c formed on the main surface of the semiconductor chip 2 and a plurality of bonding leads 11 formed on the surface 10 a side of the wiring substrate 20 and exposed from the insulating film 16 are connected via a plurality of wires 3. Connect them electrically. In the present embodiment, wire bonding is performed by a so-called positive bonding method in which the pad 2c of the semiconductor chip 2 is the first bond side and the bonding lead 11 of the wiring substrate 20 is the second bond side, and the pad 2c and the bonding lead 11 are formed. Are electrically connected. The wire 3 is made of metal, and is made of, for example, gold (Au) in the present embodiment. Therefore, as described above, by forming gold (Au) on the surface of the pad 2c of the semiconductor chip 2, the bondability between the wire 3 and the pad 2c can be improved, so that wire bonding failure can be prevented. it can.

5. Sealing Step Next, the sealing step (S5) shown in FIG. 8 will be described. FIG. 17 is an enlarged cross-sectional view showing a state where the wiring board shown in FIG. 16 is clamped with a molding die. FIG. 18 is an enlarged cross-sectional view showing a state in which the sealing resin is supplied into the cavity shown in FIG. 19 is an enlarged plan view showing a state in which the semiconductor chip and the wire shown in FIG. 15 are sealed with resin, and FIG. 20 is a cross-sectional view taken along the line FF in FIG. In FIG. 17, in order to show a state in which a plurality of device regions 20 a are arranged in one cavity 31 b, the scale in the vertical and horizontal directions is changed and schematically shown in FIG. 16.

  In this step, first, a molding die 30 shown in FIG. 17 is prepared (die preparation step). The molding die 30 includes a lower die (die surface) 31a, and an upper die (die) 31 having a cavity (recessed portion, hollow portion) 31b formed on the lower surface 31a, and a lower surface (die) of the upper die 31. A lower mold (mold) 32 having an upper surface (mold surface) 32 a facing the mold surface 31 a is provided. The cavity 31b has a substantially rectangular planar shape (rectangular shape, quadrilateral shape) with four corners chamfered. Further, the upper mold 31 has a gate part (not shown) that is a supply port of the sealing resin 4a (see FIG. 18) to the cavity 31b, and a position different from the gate part (for example, a position facing the gate part). Air vent portions (not shown) to be arranged are respectively formed. For example, the gate portion is formed at one corner of the cavity 31b and connected to the side surface of the cavity 31b. The air vent portion is formed at a corner portion different from the gate portion, and is connected to the side surface of the cavity 31b. As described above, the method of arranging the gate portion on the side surface of the cavity 31b is called a side gate method.

  Next, the wiring board 20 is arranged on the lower mold 32 of the molding die 30 (base material arranging step). Here, the cavity 31b formed in the upper mold 31 combined with the lower mold 32 has a larger area than each device region 20a of the wiring board 20, and one cavity 31b is arranged so as to cover the plurality of device regions 20a. Is done. In other words, the peripheral edge portion of the cavity 31 b is disposed on the frame portion 20 b of the wiring board 20.

  Next, the distance between the upper mold 31 and the lower mold 32 is reduced, and the wiring board 20 is clamped with the upper mold 31 and the lower mold 32 (clamping process). As a result, the upper mold 31 (the lower surface 31a of the upper mold 31) and the surface 10a of the wiring substrate 20 are in close contact with each other in the cavity 31b, the region other than the gate portion, and the air vent portion. Further, the lower mold 32 (the upper surface 32a of the lower mold 32) and the back surface 10b of the wiring board 20 are in close contact. In addition, in order to improve the adhesiveness in a clamping process, the film which consists of soft resins, such as a polyimide resin, for example can be affixed on the lower surface 31a side of the upper metal mold 31, and it can also contact | adhere through this film. In this case, the film and the resin body 4 can be easily peeled off in a substrate take-out process described later.

  Next, as shown in FIG. 18, the sealing resin 4a is supplied into the cavity 31b and cured to form the resin body 4 (sealing body forming step). In this step, the resin tablet disposed in the pot portion (not shown) is softened by heating, and the sealing resin 4a is supplied from the gate portion into the cavity 31b, and is formed by a transfer mold method. The resin tablet is made of, for example, an epoxy-based resin that is a thermosetting resin, and has a characteristic of being softened by heating and improving fluidity at a temperature lower than the curing temperature. Therefore, for example, when a softened resin tablet is pushed in with a plunger (not shown), the softened sealing resin 4a enters the cavity 31b from the gate portion formed on the molding die 30 (specifically, on the surface 10a side of the wiring board 20). Flow into. The gas in the cavity 31b is discharged from the air vent portion by the pressure at which the sealing resin 4a flows, and the cavity 31b is filled with the sealing resin 4a. As a result, the plurality of semiconductor chips 2 and the plurality of wires 3 mounted on the surface 10a side of the wiring board 20 are collectively sealed with the sealing resin 4a. At this time, the bonding leads 11 (see FIG. 16) of the wiring board 20 are also sealed. Thereafter, by heating the inside of the cavity 31b, the sealing resin 4a is heat-cured (temporarily cured) to form the resin body 4.

  Next, the wiring board 20 on which the plurality of resin bodies 4 are formed is taken out from the molding die 30 used in the above-described sealing body forming step (substrate taking out step). In this step, the upper mold 31 and the lower mold 32 shown in FIG.

  Next, the wiring board 20 taken out from the molding die 30 is transferred to a baking furnace (not shown), and the wiring board 20 is heat-treated again (baking process, main curing process). The sealing resin 4a heated in the molding die 30 is in a so-called temporary curing state in which more than half (for example, about 70%) of the curing component in the resin is cured. In this temporarily cured state, not all of the cured components in the resin are cured, but more than half of the cured components are cured, and at this point, the semiconductor chip 2 and the wires 3 are sealed. . However, since it is preferable to completely cure all the curing components from the viewpoint of the strength stability of the resin body 4, so-called main curing is performed in which the temporarily cured resin body 4 is heated again in the baking step. . As described above, the step of curing the sealing resin 4a is divided into two times, so that the next wiring substrate 20 that is next transferred to the molding die 30 can be quickly subjected to the sealing step. For this reason, manufacturing efficiency can be improved.

  By performing the above-described sealing process, as shown in FIG. 19, the semiconductor chip 2 (see FIG. 20) and the plurality of wires 3 (see FIG. 20) respectively mounted on the plurality of device regions 20a are sealed together. A resin body (sealing body) 4 to be stopped is formed.

6). Ball Mounting Step Next, the ball mounting step (S6) shown in FIG. 8 will be described. FIG. 21 is an enlarged cross-sectional view showing a state in which a plurality of solder balls serving as external electrodes (external connection terminals) of the semiconductor device are formed (joined) on the back surface of the wiring board shown in FIG.

  In this step, a plurality of solder balls (solder materials) 5 are mounted on each of the plurality of lands 13 formed on the back surface 10b side of the wiring board 20 shown in FIG. More specifically, first, as shown in FIG. 21, the wiring board 20 is turned upside down, and a plurality of solder balls 5 are respectively disposed on the plurality of lands 13 exposed from the insulating film 17 on the back surface 10 b of the wiring board 20. . Subsequently, heat treatment (reflow) is performed on the wiring board 20 on which the solder balls 5 are arranged, and the plurality of solder balls 5 are melted and bonded to the plurality of lands 13 respectively. In the reflow process, the wiring board 20 is placed in a reflow furnace and heated to a temperature higher than the melting point of the solder balls 5, for example, 260 ° C. or higher. Since the insulating film 17 is a solder resist film, it is possible to prevent bonding (bridge) between adjacent solder balls 5.

  In this step, in order to securely bond the solder ball 5 and the land 13, for example, bonding is performed using an activator called a flux. For example, the flux can be removed by coming into contact with an oxide film formed on the surface of the solder ball 5, so that the wettability of the solder ball 5 can be improved. When bonding is performed using the flux in this way, cleaning is performed to remove the residue of the flux component after the heat treatment.

7). Individualization Step Next, the individualization step (S7) shown in FIG. 8 will be described. FIG. 22 is an explanatory diagram showing a detailed flow of the singulation process shown in FIG. 8, and FIG. 23 is an explanatory diagram showing a schematic configuration of an apparatus (dicing apparatus) that performs the singulation process shown in FIG. In the singulation process of the present embodiment, the wiring substrate 20 shown in FIG. 21 is divided into device regions 20a along the flow shown in FIG. The semiconductor device 1) shown in FIG. Hereinafter, description will be made along the flow shown in FIG.

7-1. Dicing Device Preparation Step In the dicing device preparation step (S71) shown in FIG. 22, for example, a dicing device DM shown in FIG. 23 is prepared. The dicing apparatus DM includes a dicer unit (divided processing unit, dicing apparatus) 50 that performs a cutting process using a dicing blade a plurality of times and performs a singulation process on the object to be cut. Further, the dicing apparatus DM includes a substrate preparation unit (cutting object preparation unit) 51 that is located next to the dicer unit 50 and arranges a cutting object (wiring board 20) to be conveyed to the dicer unit 50 on the dicing jig 41. I have. The dicing apparatus DM includes a pickup processing unit (post-processing unit) 52 that is located next to the dicer unit 50 and individually takes out the assemblies (semiconductor devices 1) separated by the dicer unit 50. . Further, the dicing apparatus DM includes a conveyance unit 53 that conveys the substrate from the substrate preparation unit 51 to the dicer unit 50 while holding the dicing jig 41 and the wiring board 20 disposed on the dicing jig 41. In addition, the dicing apparatus DM is configured to hold the plurality of semiconductor devices (separated assemblies) 1 disposed on the dicing jig 41 and the dicing jig 41 in a state where the dicing apparatus DM is separated. To a pickup processing unit. In the present embodiment, the dicing unit DM including the dicer unit 50, the substrate preparation unit 51, the pickup processing unit 52, and the transfer units 53 and 54 will be described. However, the wiring substrate 20 and the resin body 4 shown in FIG. Since the process of cutting and dividing into pieces is performed in the dicer unit 50 shown in FIG. 23, the dicer unit 50 can be considered as a dicing apparatus.

7-2. Jig Setting Step In the jig setting step (S72) shown in FIG. 22, the wiring board 20 that is the object to be cut is placed on the dicing jig 41 in the board preparation unit 51 shown in FIG. 24 is an enlarged plan view showing an upper surface of the dicing jig shown in FIG. 23, and FIG. 25 is an enlarged plan view of a portion G in FIG. 26 is an enlarged cross-sectional view showing a state where the wiring board shown in FIG. 21 is arranged on the dicing jig shown in FIG. In FIG. 26, the semiconductor chip 2 and the wires 3 shown in FIG. 21 are not shown for easy viewing. Hereinafter, in each figure explaining the individualization process, illustration of the semiconductor chip 2 and the wire 3 is omitted.

  In the dicing step of the present embodiment, the dicing jig 41 is obtained by dividing the wiring board 20 shown in FIG. 21 into pieces for each device region 20a, and individually assembling the pieces (semiconductor device 1). It is a jig for handling the wiring board 20 until it is conveyed (between the jig setting step S72 and the individual piece pickup step (S77) shown in FIG. 22). Therefore, it has a function as a transport jig for transporting the wiring board 20 before and after separation. Further, in the substrate cutting step (S74) shown in FIG. 22, a function as a fixing jig for fixing the substrate being cut to the stage (dicing stage) 42 (see FIG. 23) is provided. In the present embodiment, since the wiring board 20 is suction-fixed on the dicing jig 41 in the substrate cutting step (S74), the dicing jig 41 has a structure necessary for suction-fixing. Hereinafter, a structural example of the dicing jig 41 will be described with reference to FIGS.

  A plurality of recesses 41 b are formed on the upper surface (arrangement surface of the wiring board 20) 41 a of the dicing jig 41. The plurality of recesses 41b are depressions for adsorbing and fixing the wiring board 20, and a vent hole (intake hole) 41f is formed in each recess 41b. In the substrate cutting step (S74) shown in FIG. 22, the surface 10a side of the structure including the wiring board 20 (in the example shown in FIG. The front surface 4b) is fixed in close contact with the upper surface 41a side of the dicing jig 41 (specifically, the upper surface 41e of the convex portion 41c). In addition, the dicing jig 41 is made of a rubber member such as hard rubber on the upper surface 41a side, which is a surface on which the cutting object is arranged, in order to improve adhesion to the cutting object. Further, in order to prevent the dicing jig 41 from being excessively deformed when sucked and fixed on the stage (dicing stage, processing table, cutting processing table) 42 (see FIG. 23), a surface opposite to the upper surface 41a ( The lower surface) covers the rubber member with a metal member such as stainless steel to improve the rigidity of the dicing jig 41.

  Further, in order to prevent the assembly after being separated into pieces in the substrate cutting step (S74) shown in FIG. 22 from scattering to the surroundings, the device region 20a (see FIG. 9) of the wiring substrate 20 (see FIG. 9) which is a cutting target portion. A plurality of recesses 41b are formed corresponding to the number of the reference numbers shown in FIG. In the present embodiment, an example in which the wiring substrate 20 (see FIG. 9) having 112 device regions 20a (see FIG. 9) is arranged is shown, so 112 concave portions 41b are formed. The plurality of recesses 41b are formed separately from each other, and a protrusion 41c is formed between adjacent recesses 41b. The recess 41b has a shape (a quadrilateral in the present embodiment) along the device region 20a in plan view, and the periphery of the recess 41b is surrounded by the protrusion 41c. Further, there is a groove (space) 41d for inserting the dicing blade 40 (see FIG. 23) between the adjacent protrusions 41c in the substrate cutting process. The grooves 41d correspond to the arrangement of the dicing regions 20c shown in FIG. 9 and are arranged in a lattice shape.

  In the jig setting step (S72), the wiring board 20 is arranged on the dicing jig 41 so that the surface 10a side of the wiring board 20 faces the upper surface 41a of the dicing jig 41 as shown in FIG. Further, the wiring board 20 is arranged on the dicing jig 41 so that the dicing region 20c overlaps the groove of the dicing jig 41, and the surface (upper surface) 4b of the resin body 4 and the upper surfaces (pressing surface, support surface) of the convex portion 41c. ) 41e is brought into contact. In other words, the wiring board 20 is arranged on the dicing jig 41 so that the plurality of device regions 20a of the wiring board 20 and the concave parts 41b of the dicing jig 41 are overlapped, and the surface 4b of the resin body 4 and the upper surfaces of the convex parts 41c. 41e is brought into contact. In other words, a groove 41d into which a dicing blade 40 (see FIG. 23) for cutting the wiring substrate 20 is inserted is formed at a position overlapping the dicing region 20c of the wiring substrate 20 fixed to the dicing jig 41. The dicing jig 41 has a structure for supporting (fixing) the wiring substrate 20 by bringing the upper surface 41e of the convex portion 41c and the surface 4b of the resin body 4 into contact with each other.

  In the manufacturing process of the BGA type semiconductor device as in the present embodiment, the solder balls 5 can be efficiently formed by forming the solder balls 5 before the singulation process. Further, as a modification to the present embodiment, the wiring substrate 20 can be disposed with the back surface 10b side facing downward (facing the dicing jig 41). However, if the back surface 10b side of the wiring board 20 on which the solder balls 5 are formed is fixed facing the dicing jig 41, the solder balls 5 are damaged in the singulation process, and the electrical reliability decreases. It may become. Therefore, from the viewpoint of suppressing damage to the solder balls 5, it is preferable that the surface 10a is separated into pieces with the surface 10a facing the dicing jig 41 as shown in FIG.

  In this step, when the dicing region 20c and the convex portion 41c are arranged so as to overlap each other, or when the device region 20a and the groove portion 41d are arranged so as to overlap each other, a cutting failure occurs in the cutting step shown in FIG. For example, when the cutting position is aligned based on the alignment mark of the wiring substrate 20 in the substrate cutting process, the dicing blade 40 (see FIG. 23) collides with the convex portion 41c and is damaged. Further, for example, when the cutting position is aligned with reference to the alignment mark of the dicing jig in the substrate cutting process, a part of the device region 20a is cut. In order to prevent such a cutting failure, the relative positional relationship between the wiring board 20 and the dicing jig 41 is adjusted so that the dicing region 20c (see FIG. 9) is arranged along the groove 41d shown in FIG. It is preferable to perform alignment. If the dicing region 20c (see FIG. 9) can be disposed along the groove 41d shown in FIG. 25, the alignment method is not particularly limited. For example, alignment marks are attached to the wiring substrate 20 and the dicing jig 41, respectively. Then, alignment can be performed based on the recognition result of the alignment mark.

7-3. Next, in the substrate fixing step (S73) shown in FIG. 22, the wiring board 20 shown in FIG. 26 is transported from the substrate preparation unit 51 shown in FIG. 23 to the dicer unit 50 and placed on the stage 42 of the dicer unit 50. It arrange | positions through the dicing jig | tool 41 and it fixes to the stage 42. FIG. FIG. 27 is a plan view showing details of the dicer section shown in FIG. 23, and FIG. 28 is an explanatory view schematically showing a cross-sectional structure along the line HH in FIG.

  As shown in FIG. 27, the dicer section 50 includes a supply section (cutting object supply section) 50 a that fixes (adsorbs and fixes) the wiring substrate 20 that is a cutting object on the stage 42 via a dicing jig 41. Yes. The dicer section 50 includes a cut section (cut processing section) 50b that is provided next to the supply section 50a and that performs a cutting process on the wiring board 20. Further, the dicer unit 50 is provided next to the supply unit 50a, and performs a drying process (there may be a cleaning process before the drying process) on the separated wiring substrate 20 (post-processing). Part) 50c. In addition, the dicer section 50 includes a discharge section (cutting object discharge section) 50d that removes the separated wiring substrate 20 and dicing jig 41 from the stage 42. 23 and 27 show an example in which the supply unit 50a and the discharge unit 50d are combined. That is, the wiring board 20 that has been separated into pieces by the cut unit 50b is transported to the drying unit 50c and dried, and then transported to the supply unit 50a and detached from the stage 42. The supply unit 50a and the discharge unit 50d require spaces for inserting the conveyance units 53 and 54 shown in FIG. 23 and fixing them on the stage 42 or removing them from the stage 42, respectively. For this reason, the occupation area of the dicer part 50 can be made small by sharing the supply part 50a and the discharge part 50d. However, the layout of the supply unit 50a and the discharge unit 50d is not limited to the mode shown in FIGS. 23 and 27. For example, a configuration in which the drying unit 50c is used as the discharge unit 50d, or a separate discharge unit 50d is provided next to the drying unit 50c. It can be set as the structure provided. According to these methods, for example, the next wiring substrate can be cut during the drying process, so that the manufacturing efficiency can be improved.

  In addition, the dicer unit 50 includes a stage (dicing stage, processing table, cutting processing table) 42 that is a processing table for performing a cutting process, a (cleaning process), and a drying process in the dicer unit 50. The stage 42 includes a holding part (chuck stage) 42a (see FIG. 28) that holds the object to be cut on the upper surface side, and the wiring substrate 20 and the dicing jig 41 are held by holding the dicing jig 41 by the holding part 42a. It can be fixed on the stage 42. The stage 42 is connected to a drive unit 42b (see FIG. 28). The stage 42 is shown in FIGS. 27 and 28 between the cut unit 50b and the supply unit 50a (discharge unit 50d) by the driving force of the drive unit 42b. It can come and go along the X direction. Further, the stage 42 can come and go between the supply unit 50a (discharge unit 50d) and the drying unit 50c along the Y direction shown in FIG. 27 by the driving force of the drive unit 42b. The stage 42 can be rotated in the θ direction on the XY plane shown in FIG. 27 by the driving force of the driving unit 42b. In addition, an air passage (gas passage, exhaust passage) 42c is formed in the stage 42, and the air passage 42c is connected to an intake device VP such as a vacuum pump, for example. Further, when the dicing jig 41 is fixed on the stage 42, the plurality of vent holes 41f of the dicing jig 41 and the air passage 42c communicate with each other to form an intake path. Therefore, when the dicing jig 41 is fixed on the stage 42, an intake path for intake of the gas in the recess 41b shown in FIG. 26 is formed. Therefore, when the air is sucked from the plurality of vent holes 41f, the surface 4b of the resin body 4 and the convex portion 41c (specifically, the upper surface 41e of the convex portion 41c) are brought into close contact with each other, and the wiring substrate 20 is placed on the stage 42 (via the dicing jig 41). (See FIG. 28). Each recess 41b is connected to a vent hole 41f. In other words, the vent hole 41f is formed for each device region 20a of the wiring board 20 shown in FIG. That is, as shown in FIG. 26, each device region 20a of the wiring board 20 can be fixed, so that each device region 20a after being separated can be prevented from being scattered around.

  In the board fixing step (S73), the wiring board 20 and the dicing jig 41 are held by the hand (holding section) 53a of the transport section 53 shown in FIG. Next, while holding the wiring board 20 and the dicing jig 41, the arm (support part) 53b is transported from the board preparation part 51 to the dicer part 50 (specifically, the supply part 50a of the dicer part 50), and is arranged in the supply part 50a. The wiring board 20 and the dicing jig 41 are arranged on the stage 42 that has been set (set). When holding with the hand 53a, it is preferable to hold the wiring board 20 while holding it with the hand 53a so that the planar positional relationship between the dicing jig 41 and the wiring board 20 does not shift. As shown in FIG. 28, the supply unit 50a includes an opening 50a1 for inserting the conveyance unit 53, and opens the door (shutter) 50a2 that closes the opening 50a1, so that the conveyance unit 53 is supplied to the supply unit 50a. Can be inserted in. When the dicing jig 41 and the wiring board 20 are arranged on the stage 42 in the supply unit 50a, as described above, the intake path for sucking the gas in the recess 41b shown in FIG. 26 is formed. Then, it is adsorbed and fixed on the stage 42 through the dicing jig 41.

7-4. Substrate Cutting Step Next, in the substrate cutting step (S74) shown in FIG. 22, the stage 42 on which the wiring board 20 shown in FIG. 28 is arranged (adsorbed and fixed) is moved from the supply unit 50a toward the cut unit 50b, and dicing is performed. The blade 40 travels in the dicing area 20c (see FIG. 9) of the wiring board 20, so that the wiring board 20 is cut and cut. FIG. 29 is an enlarged cross-sectional view showing a state in which the wiring board shown in FIG. 28 is cut along the dicing region. FIG. 30 is an explanatory view showing the structure around the dicing blade shown in FIG. 28, and shows a state in which the dicing blade is viewed from the lower surface side. FIG. 31 is an explanatory view schematically showing a state where the stage shown in FIG. 28 is moved to cut the wiring board.

  In this step, as shown in FIG. 29, the wiring board 20 with the plurality of resin bodies 4 formed on the surface 10a side is fixed on the dicing jig 41, and the wiring board 20 is moved along the dicing region 20c. Move and cut. In order to cut the wiring board 20 along the dicing area 20c, one or both of the dicing blade 40 and the wiring board 20 may be moved along the dicing area 20c for cutting. Therefore, an embodiment in which the dicing blade 40 is moved and cut can be considered as a modification. However, from the viewpoint of reducing the size of the apparatus, it is preferable to move the stage 42 without moving the dicing blade 40. Further, from the viewpoint of causing the dicing blade 40 to travel accurately along the dicing region 20c, the wiring board 20 that is the object to be cut is moved as in the present embodiment, and the dicing blade 40 is moved during the cutting process. It is preferable not to do so. Further, the wiring substrate 20 and the resin body 4 can be reliably cut by causing the lower end of the dicing blade 40 to run at a height that is inserted into the groove 41d of the dicing jig 41. The dicing blade 40 is a cutting jig (rotating blade) in which abrasive grains such as diamond are fixed to the outer periphery of a thin plate having a substantially circular outer shape. The dicing blade 40 is an abrasive fixed to the outer periphery by rotating the thin plate. The grain cuts and cuts the cutting region of the object to be cut (in this embodiment, the wiring board 20 and the resin body 4).

  As shown in FIGS. 27 and 28, a cutting device (blade unit, cutting device) 43 to which a dicing blade 40 is attached is disposed in the cut portion 50 b of the dicer portion 50. The cutting machine 43 includes a case (cover, lid) 44 that is a cover that covers an upper portion of the dicing blade 40, and the dicing blade 40 is disposed in the case 44.

  As shown in FIG. 28, the cutting machine 43 includes a nozzle 45 that supplies a liquid (for example, water) toward the surface (for example, a side surface) of the dicing blade 40 during the cutting process by the dicing blade 40. The nozzle 45 is a cooling nozzle that suppresses the temperature rise of the dicing blade 40 during cutting, and the tip (discharge port) of the nozzle 45 is disposed toward the side surface 40b of the dicing blade 40 as shown in FIG. ing. Further, as shown in FIG. 30, the nozzles 45 are respectively disposed on the two side surfaces 40 b of the dicing blade 40. Thereby, the cooling liquid (liquid, water, cooling water) 45a can be sprayed (supplied) toward the two side surfaces 40b of the dicing blade 40 during the cutting process. The supply speed of the coolant 45a from the two nozzles 45 is, for example, about 1.0 to 2.0 liters per minute. The discharge portion of the nozzle 45 is disposed in the case 44 in order to shorten the distance to the dicing blade 40. Further, as a modified example, a configuration in which a pressurizing fluid (gas, for example, air) is supplied to the nozzle 45 in order to increase the supply pressure of the coolant 45a can be considered. However, if the supply pressure of the cooling liquid 45a from the nozzle 45 is too high, the cutting waste is wound up and the inside of the case 44 is contaminated. Therefore, in the present embodiment, the nozzle 45 has a pressurizing fluid (gas, for example, Air) is not supplied.

  As shown in FIG. 28, the cutting machine 43 includes a nozzle 46 that supplies liquid (for example, water) toward the end portion (end surface, circumferential surface) of the dicing blade 40 during the cutting process by the dicing blade 40. ing. The nozzle 46 is a cleaning nozzle that removes cutting waste generated during the cutting process. As shown in FIG. 30, the tip (discharge port) of the nozzle 46 is positioned between the end faces of the dicing blade 40 (between the two side faces 40b). (Circumferential surface) 40a is disposed at a position opposite to 40a, and is disposed toward end surface 40a. Thereby, the cleaning liquid (liquid, water, cleaning water) 46a can be sprayed (supplied) toward the end portion (end surface 40a) of the dicing blade 40 during the cutting process. By supplying the cleaning liquid 46a during the cutting process, the cutting waste generated in the cutting process (mostly fine resin scraps constituting the resin body 4 and the wiring board 20 shown in FIG. 29) is retained on the wiring board 20. Can be suppressed. Moreover, it can suppress that the clearance gap between the some abrasive grains exposed on the surface of the dicing blade 40 is filled with cutting waste by spraying the washing | cleaning liquid 46a on the end surface 40a which is the main cutting surface of the dicing blade 40. FIG. The supply speed of the cleaning liquid 46a from the nozzle 46 is smaller than the supply speed of supplying the cooling liquid 45a from the nozzle 45, and is, for example, 1.0 to 2.0 liters per minute. Further, as a modification, a configuration in which a pressurizing fluid (gas, for example, air) is supplied to the nozzle 46 in order to increase the supply pressure of the cleaning liquid 46a is conceivable. However, if the supply pressure of the cooling liquid 46a from the nozzle 46 is too high, the cutting waste is wound up and the inside of the case 44 is contaminated. In this embodiment, the nozzle 46 has a pressurizing fluid (gas, for example, Air) is not supplied.

  Further, the cut part 50 b of the dicer part 50 includes an alignment part (board position recognition part) 47 that specifies the position of the wiring board 20. In the substrate cutting process, it is necessary to adjust (align) the relative positional relationship between the wiring substrate 20 as a cutting target and the dicing blade 40 before starting the cutting process. The alignment can be performed by detecting the formed alignment mark and specifying the position of the wiring board 20.

  Moreover, the cut part 50b of the dicer part 50 is provided with the nozzle 48 which supplies a liquid (for example, water) toward the wiring board 20 which is a cutting target after the cutting process by the dicing blade 40. The nozzle 48 is a foreign matter removing nozzle that removes foreign matter that has not been removed from the periphery of the wiring board 20 at the time of cutting, and the tip (discharge port) of the nozzle 48 is positioned away from the case 44 as shown in FIG. Has been placed. Specifically, the nozzle 48 is attached between the supply part 50a and the dicing blade 40, and more specifically, on the cut part side of the partition wall that separates the supply part 50a and the cut part 50b. The nozzle 48 supplies liquid (for example, water) at a pressure higher than that of the nozzles 45 and 46 in order to remove foreign matters that could not be removed during the cutting process. A more detailed configuration of the nozzle 48 will be described later.

  In the substrate cutting step (S74), as shown in FIG. 31, the wiring substrate 20 is fixed (adsorption fixed) on the stage 42 via the dicing jig 41, and, for example, the dicing blade 40 is rotated in the rotational direction indicated by the arrow D1. While rotating, the stage 42 to which the wiring board 20 is fixed is moved in the direction indicated by the arrow D2 (from the supply unit 50a to the cut unit 50b). Therefore, as shown in FIG. 29, by fixing the wiring board 20 so that the dicing region 20c of the wiring board 20 and the groove 41d overlap each other, the dicing blade 40 penetrates into the groove 41d, and the wiring board 20 Can be cut off. Moreover, since the convex part 41c is arrange | positioned so that it may extend along the dicing area | region 20c of the wiring board 20, the periphery of the dicing area | region 20c can be firmly fixed at the time of the cutting process by the dicing blade 40. FIG.

  There are generally two types of rotation directions of the dicing blade 40. That is, one is a down-cut method that rotates from the back surface 10b of the wiring board 20 toward the front surface 10a as shown by an arrow D1 in FIG. In the down-cut method, in the case of a cutting method in which the wiring board 20 that is a workpiece is moved, the dicing blade 40 cuts the cutting object forward with respect to the cutting direction (movement direction) 44 of the wiring board 20. Rotate. And although illustration is abbreviate | omitted, another is an upper cut system rotated from the surface 10a of the wiring board 20 toward the back surface 10b. In the upper cut method, in the case of a cutting method in which the wiring board 20 that is a workpiece is moved, the dicing blade 40 cuts the cutting object backward with respect to the cutting direction (movement direction) 44 of the wiring board 20. Rotate. Since the down cut method shown in FIG. 31 rotates so as to hold the cutting region of the wiring board 20 against the dicing jig 41, it is easier to fix the wiring board 20 than the upper cut method. For this reason, in this Embodiment, the down cut system is employ | adopted.

  Further, as shown in FIG. 9, the wiring board 20 includes a plurality of (eight in FIG. 9) dicing regions (cut regions) 20 c 1 extending in the X direction in a plan view, and a Y direction orthogonal to the X direction. A plurality (17 in FIG. 9) of dicing regions (cut regions) 20c2 extending along the line are provided. Therefore, in order to cut each dicing region 20c in this step and to divide each device region 20a arranged in a matrix, the dicing blade 40 (FIG. 29) is used a plurality of times in each of the X direction and the Y direction shown in FIG. Need to drive). Therefore, the X-direction cutting step (S741) and the Y-direction cutting step (S744) shown in FIG. 22 are each repeated a plurality of times. For example, referring to FIG. 31, the stage 42 is moved in the direction (arrow D2) from the supply unit 50a to the cut unit 50b to cut the wiring board 20 from one end to the opposite end, and then cut The stage 42 is moved in the direction (arrow D3) from the part 50b toward the supply part 50a. Then, alignment is performed in the Y direction shown in FIG. 27 so that the dicing blade 40 travels in the dicing area 20 different from the dicing area 20c cut at the first time, and then the second cutting is performed. That is, the stage 42 is moved in a direction (arrow D2) from the supply unit 50a toward the cut unit 50b to cut the wiring board 20 from one end to the opposite end along the dicing region 20c. This is repeated according to the number of dicing areas 20c. Further, between the X direction cutting step (S741) and the Y direction cutting step (S744), the direction changing step (S743) for rotating the stage 42 shown in FIG. 27 by 90 ° in the θ direction is performed at least once. In the foreign matter cleaning step (S742, S745) shown in FIG. 22, the stage 42 (FIG. 28) uses the nozzle 48 shown in FIG. 31 to remove foreign matter generated in the X direction cutting step (S741) and the Y direction cutting step (S744). (Ref.) It is a process of removing from the top. Details of this foreign matter cleaning step (S742, S745) will be described later.

7-5. Substrate Drying Step Next, in the substrate drying step (S75) shown in FIG. 22, the supply unit 50a with the wiring substrate 20 divided into a plurality for each device region 20a being sucked and fixed on the stage 42 as shown in FIG. It moves from the (discharge part 50d) to the drying part 50c, and removes water adhering to the periphery of the wiring board 20 (drys the periphery of the wiring board 20). The drying method is not particularly limited as long as moisture can be removed around the wiring substrate 20. For example, a method of blowing dry air (air from which moisture in the atmosphere has been removed) to the wiring substrate 20, a heating unit such as a heater (not shown) (Omitted) can be disposed in the drying section 50c, and the method of heating the periphery of the wiring board 20 or a combination thereof can be used. After the moisture attached to the stage 42, the dicing jig 41, and the wiring board 20 is removed, the stage 42 is moved from the drying unit 50c to the discharge unit 50d (supply unit 50a). This step is performed in a state where the wiring substrate 20 is sucked and fixed onto the stage 42 via the dicing jig 41.

  In the present embodiment, the embodiment in which the periphery of the wiring substrate 20 is dried by the drying unit 50c after the substrate cutting step (S74) has been described. Can be applied. For example, the periphery of the wiring board 20 can be rewashed (rewashing process is performed), and then the wiring board 20 can be dried (drying process). The re-cleaning process and the drying process are included in a post-processing process in which processing is performed on the wiring substrate 20 singulated for each device region 20a.

7-6. Jig Unloading Step Next, in the jig unloading step (S76) shown in FIG. 22, the separated wiring board 20 and dicing jig 41 are unloaded from the discharge unit 50d (supply unit 50a) shown in FIG. FIG. 32 is an enlarged cross-sectional view showing a state in which the wiring board and the dicing jig are held by the transport unit in the discharge unit shown in FIG.

  As shown in FIG. 32, the conveyance unit 54 that carries out the separated wiring substrate 20 and the dicing jig 41 from the discharge unit 50d removes the dicing jig 41 and the separated wiring substrate 20 (device region 20a). A hand (holding part) 54a for holding and an arm (supporting part) 54b for transferring the hand 54a are provided. Further, the hand 54a of the transport unit 54 contacts the transport object (the dicing jig 41) and sucks and holds the suction unit 54c and the dicing jig 41 so as to suck and hold the wiring substrate 20 (a plurality of separated pieces). The device region 20a) is provided with a pressing portion 54d for pressing the dicing jig 41 so that the device region 20a) does not move. The conveyance unit 54 sucks and holds the dicing jig 41 by the suction unit 54c of the hand 54a, and clamps the separated wiring board 20 (device region 20a) between the holding unit 54d and the dicing jig 41. The wiring board 20 (device region 20a) separated into pieces is held. The transport unit 53 shown in FIG. 28 and the transport unit 54 shown in FIG. 32 have the same structure. For this reason, as a modification to the present embodiment, the transport unit 53 and the transport unit 54 are combined, and the transport to the supply unit 50a and the transport from the discharge unit 50d shown in FIG. It can be carried out by the transport part 54). However, it is preferable that the dicing apparatus DM (see FIG. 23) separately includes a conveyance unit 53 that carries in the supply unit 50a and a conveyance unit 54 that carries out the discharge unit 50d. Thereby, since the conveyance part 54 will convey only the wiring board 20 and the dicing jig 41 which have been singulated, cleaned, and dried, contamination of the product after singulation via the conveyance part 54 Can be prevented or suppressed.

  The discharge unit 50d includes an opening 50d1 for inserting the conveyance unit 54, and the conveyance unit 54 (hand 54a) is inserted into the discharge unit 50d by opening a door (shutter) 50d2 that closes the opening 50d1. be able to. In the jig unloading step (S76), the hand 54a is inserted into the discharge section 50d and placed on the dicing jig 41 that is suction-fixed on the stage 42. The plurality of suction portions 54c of the hand 54a are brought into contact with the dicing jig 41 to hold the dicing jig 41 by suction. Further, the pressing portion 54 d is pressed against the separated wiring substrate 20 and fixed on the dicing jig 41. In this state, if the intake air from the intake device VP connected to the air passage 42c of the stage 42 is shut off, the dicing jig 41 and the separated wiring board 20 are lifted onto the stage 42 as shown in FIG. be able to. Next, the arm (support part) 53b is operated in a state where the wiring board 20 and the dicing jig 41 are held by the hand 54a, and the hand 54a is carried out from the discharge part 50d. In the present embodiment, the next process is an individual pick-up process (S77) (see FIG. 22). Next, the arm (support part) is held with the wiring board 20 and the dicing jig 41 held by the hand 54a. 53b is moved and conveyed from the discharge section 50d to the pickup processing section 52 shown in FIG.

7-7. Individual Pickup Step Next, in the individual pickup step (S77) shown in FIG. 22, the wiring substrate 20 (device region 20a, semiconductor device 1) separated from the dicing jig 41 as shown in FIG. Each is held by suction and removed individually. FIG. 33 is an enlarged cross-sectional view showing a state where a semiconductor device separated from the dicing jig shown in FIG. 32 is picked up.

  In the individual piece pick-up step (S77), for example, as shown in FIG. 33, the wiring substrate 20 (device region 20a, semiconductor device 1) separated by a pickup jig (individual piece holding unit) 55 is sucked and held. To do. Then, the semiconductor device 1 held by suction is lifted and taken out from the dicing jig 41. Each semiconductor device 1 picked up in this step is transported to the next step (for example, an inspection step) while being held by the pickup jig 55 or stored in a tray (not shown). Then, necessary inspections and tests such as appearance inspection are performed, and the semiconductor device 1 shown in FIG. 1 is completed. On the other hand, the dicing jig 41 from which all the semiconductor devices 1 have been taken out is transported to the substrate preparation unit 51, and the wiring board 20, which is a new cutting object, is placed on the dicing jig 41. Here, for example, when a bowl-shaped foreign matter remains in the groove 41 d of the dicing jig 41 and a part thereof protrudes on the convex part 41 c, a bowl-shaped foreign material is formed between the new wiring board 20 and the dicing jig 41. The foreign matter gets caught, causing suction failure and cutting failure. However, according to the present embodiment, since the bowl-shaped foreign matter can be removed in the substrate cutting step described above, this can be prevented or suppressed. However, as shown in FIG. 35, even when the high-pressure liquid 48a is sprayed from the nozzle 48, before a part of the bowl-shaped foreign matter remains in the groove 41d (see FIG. 29), before being conveyed to the substrate preparation unit 51 It is preferable to clean the dicing jig 41. That is, it is preferable that after the pick-up process, the dicing jig 41 is washed and dried and then transported to the substrate preparation unit 51.

<Problems arising in the substrate cutting process>
Although the semiconductor device 1 shown in FIGS. 1 to 4 is manufactured as described above, according to the study by the present inventor, the wiring substrate 20 is fixed on the dicing jig 41 in the individualization step (S7). When the dicing blade 40 is run in the state and the wiring substrate 20 is cut into pieces, it has been found that the following problems occur. That is, when the wiring board 20 is cut by the dicing blade 40, a bowl-like foreign material larger than the cutting waste and the end material of the cut wiring board 20 are generated, and these foreign substances are manufactured after the singulation process. It was found that this would cause a malfunction. In the substrate cutting step (S74) described above, the members in the cutting region (dicing region 20c) of the object to be cut are cut by the dicing blade 40, and most of them are discharged as fine cutting waste, but a part is bowl-shaped. It remains in the vicinity of the object to be cut as a (string-like) foreign matter. When the inventor of the present application investigated the saddle-like foreign matter, it was found that it originated from the material (insulating layer material) constituting the insulating layer of the wiring board 20. When the inventor of the present application has analyzed the bowl-shaped foreign matter, the string-like foreign matter is composed of the constituent material of the wiring board 20 (for example, the insulating layer 14 of the wiring board 20) among the constituent materials of the workpiece. Further, the thickness of the foreign matter is about 20 μm to 30 μm, the width is about the same as the width of the dicing blade 40 (for example, about 200 μm to 300 μm), and the shape extends long in a string shape (band shape). It was. Further, the length of the foreign matter is the same as the length along the cutting direction of the cut wiring board 20 in the longest thing. In addition, when the generated bowl-shaped foreign matter was taken out and observed, it was an external shape wound in an arc shape (a coil shape having a relatively large diameter) or a bar-shaped external shape.

  According to the study of the present inventor, this saddle-like foreign matter is considered to be generated by the following mechanism. In the singulation process, as shown in FIG. 29, the dicing blade 40 is pressed to sequentially cut the wiring board 20 from the back surface 10b side to the front surface 10a side. Accordingly, during cutting, the pressing force from the dicing blade 40 is applied to the wiring board 20 from the back surface 10b toward the front surface 10a. Here, if the back surface 10b of the wiring board 20 is sequentially cut from the front surface 4b of the resin body 4 to become fine cutting waste, the above-mentioned bowl-shaped foreign matter is not generated, but the cutting object (cutting object) is obtained by cutting. When the thickness of () is reduced, the object to be cut breaks before the cutting object is finely cut by the pressing force from the dicing blade 40. Here, in the substrate cutting process using the dicing jig 41, as shown in FIG. 29, dicing is performed between the wiring substrate 20 as a cutting target and the dicing jig 41 (between the resin body 4 and the bottom surface of the groove 41d). There is a space (groove) for inserting the blade 40. For this reason, when a part of the object to be cut breaks, the broken part (uncut part) is pushed into the groove part 41d under the pressing force from the dicing blade 40. As a result, it is considered that the pressing force from the dicing blade 40 is not sufficiently transmitted to the uncut portion pushed into the groove 41d, and an elongated bowl-shaped foreign matter is formed. Moreover, the sealing resin constituting the resin body 4 is more brittle and more easily crushed than the prepreg material constituting the insulating layer (core layer) 14 of the wiring board 20. For this reason, it is considered that the bowl-shaped foreign matter is mainly composed of the material of the wiring board 20. In this embodiment, as described above, the down-cut method is adopted. However, the down-cut method rotates in a direction in which the wiring board 20 is pressed against the dicing jig 41, so that the upper-cut method is used. Breaks easily.

  In addition, the wiring board 20 before singulation is provided with a frame portion 20b as shown in FIG. 19, but after the singulation for each device region 20a in the substrate cutting process, the frame portion 20b is not the end. The material may remain on the stage 42 (including the dicing jig 41) shown in FIG.

  Such a bowl-shaped foreign material or mill ends cause a problem in the manufacturing process after the singulation process. For example, in the above-described substrate unloading process, if foreign matter or end material is interposed between the suction portion 54c of the hand 54a and the dicing jig 41 shown in FIG. 32, the hand 54a cannot be sucked and held, causing a suction failure. Further, when a bowl-shaped foreign object is sandwiched between the holding portion 54d and the wiring board 20, the bowl-shaped foreign substance is entangled with the solder ball 5 formed on the back surface 10b of the wiring board 20, as shown in FIG. There is concern that 5 will be damaged. Further, even when the substrate can be sucked and held in the above-described substrate unloading process, if a foreign object or scrap material is transported together when transported to the next process, the same problem occurs in the next process (for example, the individual pick-up process). Cause. Further, if the foreign matter or the end material remains on the stage 42 shown in FIG. 31, the foreign matter or the end material is interposed between the stage 42 and the dicing jig 41 when the next cutting target (wiring board 20) is cut. The object to be cut is tilted.

  In order to solve the above-described problems, it is preferable to remove the bowl-shaped foreign matters and end materials generated in the substrate cutting step before the jig carrying out step (particularly preferably before the substrate drying step). Therefore, the inventor of the present application has studied a technique for removing ridge-like foreign matters and end materials in the substrate cutting process. The inventor of the present application first studied a method of removing the bowl-shaped foreign matter and the end material by spraying water at a high pressure on the wiring substrate 20 being cut. Specifically, the pressure of water supplied from the nozzle 46 shown in FIG. 31 was increased. In addition to the nozzle 46, a nozzle (not shown) for supplying water at a pressure higher than that of the nozzle 46 is provided in the case 44, and water is supplied from the nozzle to the wiring substrate 20 during cutting at a high pressure. The method of spraying was also examined. However, it was found that there are the following problems. That is, when the liquid is sprayed onto the wiring board 20 at a pressure high enough to remove the bowl-shaped foreign matter during the cutting process, cutting scraps are wound up and the members in the case 44 are contaminated. This causes the wiring board 20 to be contaminated. Further, it has been found that when water is supplied at a different pressure from a plurality of nozzles during cutting, the flow of water is inhibited depending on the supply pressure. In particular, since it is necessary to supply liquid (for example, water) at a pressure higher than that of the nozzle 45 and the nozzle 46 in order to remove the bowl-shaped foreign matter and mill ends, the nozzle for removing the foreign matter is used as the nozzle 45, 46. When arranged close to each other, the flow of the liquid supplied from the nozzles 45 and 46 is likely to be hindered. In other words, if the supply pressure of the liquid from the foreign matter removing nozzle is kept low so that the flow of the liquid supplied from the nozzles 45 and 46 is not hindered, the bowl-shaped foreign matter and end material cannot be removed sufficiently. .

<Details of substrate cutting process>
The inventor of the present application found the configuration of the substrate cutting process of the present embodiment based on the above examination results. FIG. 34 is an enlarged cross-sectional view showing an operation in the dicing apparatus at the time of the X-direction cutting process or the Y-direction cutting process shown in FIG. FIG. 35 is an enlarged cross-sectional view showing the operation in the dicing apparatus during the foreign substance cleaning step shown in FIG. 36 is a sectional view showing the structure of the foreign matter removing nozzle shown in FIG. 35, and FIG. 37 is a top view of the foreign matter removing nozzle shown in FIG.

  In the X-direction cutting step (S741) shown in FIG. 22, as shown in FIG. 34, the stage 42 to which the wiring board 20 is sucked and fixed is moved from the supply unit 50a toward the cut unit 50b. As shown, the dicing region 20c1 extending along the X direction is cut. At this time, the dicing blade 40 shown in FIG. 34 travels in the dicing area 20c1 while rotating in the rotation direction (down cut direction) indicated by the arrow D1. At this time, as shown in FIG. 34, cutting is performed by the dicing blade 40 while supplying liquids (cooling liquid 45a and cleaning liquid 46a) from the nozzles 45 and 46, respectively. At this time, as shown in FIG. 34, no liquid is supplied from the nozzle 48 which is a foreign matter removing nozzle. That is, the stage 42 is moved (cutting is performed) in a state where the supply of the liquid (for example, water) from the nozzle 48 is stopped. In other words, the stage 42 is moved (cutting is performed) while the nozzle 48 is not operating. Thus, the flow of the liquid (cooling liquid 45a and cleaning liquid 46a) supplied from the nozzles 45 and 46 is inhibited by stopping the supply of the liquid from the nozzle 48, which is a foreign matter removing nozzle, at the time of cutting. Can be prevented or suppressed. In other words, the dicing blade 40 can be cooled by the cooling liquid 45a (for example, water) supplied from the nozzle 45. Further, fine cutting waste generated in the cutting process can be removed by the cleaning liquid 46a (for example, water) supplied from the nozzle 46. In addition, although the bowl-shaped foreign material described above is generated by cutting, the bowl-shaped foreign material may not be removed at this time.

  Next, in the foreign matter removing step (S742) shown in FIG. 22, as shown in FIG. 35, the stage 42 on which the wiring board 20 is sucked and fixed while supplying the liquid 48a from the nozzle 48 is transferred from the cut portion 50b to the supply portion 50a. Move towards. As described above, in order to cut the plurality of dicing regions 20c and divide each device region 20a arranged in a matrix, the dicing blade 40 (see FIG. 9) multiple times each in the X direction and the Y direction shown in FIG. 29)). Each of the X-direction cutting step (S741) and the Y-direction cutting step (S744) shown in FIG. 22 is repeated a plurality of times. In other words, after cutting the first dicing region 20c, the stage 42 is moved toward the supply unit 50a to cut the second dicing region 20c. In the present embodiment, when the stage 42 is moved toward the supply unit 50a, the liquid (removal) 48a is sprayed from the nozzle 48 toward the wiring substrate 20 so that the foreign matter remaining around the wiring substrate 20 is removed. The end material is removed from the stage 42.

  In addition, since this step is a step of removing the bowl-shaped foreign matter and end material that are difficult to remove during cutting, the supply pressure of the liquid 48a supplied from the nozzle 48 is the supply pressure of the cooling liquid 45a and the cleaning liquid 46a shown in FIG. It is preferable to set higher. In the present embodiment, in order to improve the supply pressure from the nozzle 48, a method of mixing and blowing a plurality of fluids in the nozzle 48 is adopted. Specifically, as shown in FIG. 36, the nozzle 48 includes a path for supplying a gas (fluid) 48a1 such as air and a path for supplying a liquid (fluid) 48a2 such as water. The supply path for the gas 48a1 and the supply path for the liquid 48a2 are integrated in the nozzle 48 and connected to the discharge port 48b. In other words, the discharge port 48b communicates with a supply port 48c that supplies a gas (fluid) 48a1 such as air and a supply port 48d that supplies a liquid (fluid) 48a2 such as water. Thus, the supply pressure of the liquid 48a can be easily raised by mixing and blowing out a plurality of fluids. For example, in the present embodiment, air is supplied to the supply port 48c at a pressure of about 300 Pa, and water is supplied to the supply port 48d at a flow rate (supply rate) of about 0.5 to 1.5 liters per minute. . Thereby, the supply pressure of the liquid 48a from the nozzle 48 becomes more than twice the supply pressure from the nozzle 45 and the nozzle 46 shown in FIG. Thus, the method of mixing and supplying a plurality of fluids is preferable in that the supply pressure can be easily adjusted. Further, when supplying the liquid with the same supply pressure, the damage to the spray target (wiring board 20) is smaller when the liquid and the gas are mixed and supplied than when the liquid is supplied alone. For example, when the supply pressure from the nozzle 48 is set to be twice or more than the supply pressure from the nozzle 46 without supplying the gas 48a1, the liquid supply speed can be obtained if the opening diameters of the discharge ports of the nozzle are the same. Must be doubled or more. For this reason, since the weight of a liquid increases, the damage given to a spraying target object becomes large. Therefore, an embodiment in which only one fluid (liquid 48a2) is sprayed as a modified example is conceivable, but a plurality of fluids are mixed as in the present embodiment from the viewpoint of reducing damage to the wiring board 20 when removing foreign matter. It is more preferable to supply it.

  As described above, according to the present embodiment, since the X-direction cutting step (S741) and the foreign matter removing step (S742) are performed at different timings, the liquid 48a can be supplied from the nozzle 48 at a high pressure. As a result, it is possible to reliably remove the bowl-shaped foreign matter and the end material. Further, since the supply of the liquid from the nozzle 48 is stopped in the X-direction cutting step (S741), the liquid 48a supplied from the nozzle 48 is not affected by the cutting process. For this reason, the cutting defect by spraying the high-pressure liquid 48a on the object to be cut can be prevented or suppressed. That is, it is possible to surely remove the saddle-like foreign matters and end materials that cause problems in the processes after the substrate cutting process while suppressing the occurrence of cutting defects in the substrate cutting process. As a result, the manufacturing efficiency of the semiconductor device can be improved.

  Further, as shown in FIG. 37, the nozzle 48 includes a plurality of discharge ports 48b arranged side by side in a direction intersecting (orthogonal) with respect to the moving direction (arrow D3) of the stage 42 shown in FIG. preferable. As a modification, a nozzle 48 having one discharge port 48b can be used. However, when there is one discharge port 48b, the spraying range of the liquid 48a is narrowed. Or when there is one discharge port 48b, the supply pressure of the liquid 48a falls. On the other hand, if a plurality of discharge ports 48b are arranged side by side as shown in FIG. 37, the liquid 48a can be sprayed in a wide range, so that it becomes easy to remove the bowl-shaped foreign matter and end material. In addition, by spraying the liquid 48a at once over a wide range, the number of repetitions of the foreign substance removal step (S742) shown in FIG. 22 can be reduced. For example, when the liquid 48a can be sprayed from the nozzle 48 to a range wider than the long side of the stage 42 shown in FIG. 27, the foreign matter is removed after repeating the X-direction cutting step shown in FIG. It can be set as the embodiment which performs a process once. Therefore, the width of the spray range of the liquid 48a (see FIG. 35) supplied from the plurality of discharge ports 48b of the nozzle 48 is preferably longer than the long side of the stage 42.

  Further, in this step, since it is not necessary to bring the dicing blade 40 into contact with the wiring board 20, for example, as shown in FIG. 35, the position of the dicing blade 40 is moved higher than in the X-direction cutting step. Is preferred.

  Next, in the direction changing step (S743) shown in FIG. 22, the stage 42 shown in FIG. 27 is rotated by 90 ° in the θ direction. Thus, the dicing region 20c2 shown in FIG. 9 is arranged along the direction from the supply unit 50a to the cut unit 50b. That is, in the Y-direction cutting step (S744) performed next to this step, the dicing shown in FIG. 9 can be performed by moving the stage 42 from the supply unit 50a toward the cut unit 50b as in the X-direction cutting step (S741). The region 20c2 can be cut.

  Next, in the Y direction cutting step (S741) shown in FIG. 22, the dicing region 20c2 shown in FIG. 9 is cut by the same operation as the X direction cutting step (S741). That is, as shown in FIG. 34, the stage 42 to which the wiring board 20 is attracted and fixed is moved from the supply unit 50a toward the cut unit 50b, so that the dicing region 20c2 extending along the Y direction as shown in FIG. Disconnect. At this time, the dicing blade 40 shown in FIG. 34 travels in the dicing area 20c2 while rotating in the rotation direction (down cut direction) indicated by the arrow D1. At this time, as shown in FIG. 34, cutting is performed by the dicing blade 40 while supplying liquids (cooling liquid 45a and cleaning liquid 46a) from the nozzles 45 and 46, respectively. At this time, as shown in FIG. 34, no liquid is supplied from the nozzle 48 which is a foreign matter removing nozzle. That is, the stage 42 is moved (cutting is performed) in a state where the supply of the liquid (for example, water) from the nozzle 48 is stopped. In other words, the stage 42 is moved (cutting is performed) while the nozzle 48 is not operating.

  Next, in the foreign matter removal step (S745) shown in FIG. 22, the bowl-like foreign matter and the end material on the stage 42 are removed by the same operation as the foreign matter removal step (S742). That is, as shown in FIG. 35, while supplying the liquid 48a from the nozzle 48, the stage 42 to which the wiring board 20 is adsorbed and fixed is moved from the cut portion 50b toward the supply portion 50a. When the Y-direction cutting step (S741) is performed after the X-direction cutting step (S741), the wiring substrate 20 that is a cutting target is finely divided along the dicing region 20c1 shown in FIG. For this reason, the length of the foreign material and end material generated in the Y-direction cutting step is shorter than the length of the foreign material and end material generated in the X-direction cutting step. In this way, when the length of the foreign matter or the end material is short, it is easy to remove. For example, the number of repetitions of the foreign matter removal step (S745) shown in FIG. 22 is made smaller than the number of repetitions of the foreign matter removal step (S742). be able to. However, from the viewpoint of more reliably removing foreign matter and mill ends, the number of repetitions of the foreign matter removal step (S742, S745) may be the same.

  Further, in the present embodiment, as shown in FIG. 9, the longitudinal direction (direction along the long side, X direction) of the wiring board 20 having a rectangular shape is cut first, and then the direction along the short side (Y The embodiment of cutting the direction) has been described. However, from the viewpoint of shortening the length of the bowl-shaped foreign matter and end material generated during the cutting process and facilitating the removal, the direction along the short side (Y direction) is cut first, and then along the long side. It is preferable to cut the direction (X direction). That is, it is preferable that the order of the X direction cutting step and the Y direction cutting step shown in FIG.

  As another modified example, a modified example may be applied in which each block connected with a plurality of device regions 20a is divided (cut) into islands, and then the dicing region 20c of each block is cut. That is, instead of sequentially cutting each dicing area 20c from the end, for example, every other dicing area 20c2 (see FIG. 9) is cut every other dicing area 20c. Then, a direction changing process is performed to cut the dicing area 20c1 (see FIG. 9) every other line or every other line, so that the wiring board 20 is formed in an island shape for each block to which the plurality of device areas 20a are connected. Can be divided (cut). Thereafter, the dicing area 20c remaining in each block is cut into individual pieces. According to this modification, the length of the foreign material and end material which generate | occur | produce in a cutting process can be shortened by dividing | segmenting into pieces after dividing | segmenting into a fine block beforehand.

<Modification>
As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  For example, in the above embodiment, the semiconductor device 1 manufactured by the so-called MAP (Mold Array Package) method has been described as an example. However, the sealing method of the semiconductor device is not limited to the MAP method, and various modifications are possible. An example can be applied. FIG. 38 is a cross-sectional view showing a semiconductor device which is a modification to FIG. FIG. 39 is an enlarged cross-sectional view showing a substrate cutting process which is a modification to FIG. 40 is an enlarged cross-sectional view showing the periphery of the cut portion shown in FIG. 39 in an enlarged manner, and FIG. 41 is a cross-sectional view taken along line JJ in FIG.

  In the semiconductor device shown in FIG. 38, the resin body 4 does not cover the entire surface 10 a of the wiring substrate 10, but the peripheral portion of the wiring substrate 10 (in other words, the periphery of the semiconductor chip 2 mounted on the surface 10 a of the wiring substrate 10. ) Is exposed from the resin body 4 and is different from the semiconductor device 1 shown in FIG. The other points are the same as those of the semiconductor device 1 described with reference to FIGS. In a semiconductor device sealing process in which a part (peripheral portion) of the wiring substrate 10 is exposed from the resin body 4 as in the semiconductor device 60, a cavity is provided for each device region and a sealing resin is supplied to each device region. The resin body 4 is formed by a so-called individual mold method. For this reason, when sealed by the individual mold method, a plurality of resin bodies 4 are formed on the surface 10a side of the wiring board 20, for example, as shown in FIG. In other words, when the sealing is performed by the individual mold method, the dicing region 20c is disposed between the adjacent resin bodies 4.

  Further, in the case of sealing by the individual mold method, in the individualization step (substrate cutting step), the surface 10a of the wiring board 20 is brought into contact with the upper surface 41e of the convex portion 41c of the dicing jig 41 as shown in FIG. And cut. That is, since the plurality of resin bodies 4 formed on the surface 10a of the wiring board 20 are arranged so as to be accommodated in the plurality of recesses 41b, the wiring board 20 and the dicing jig 41 are disposed around the dicing region 20c. The resin body 4 is not interposed. In this case, in the substrate cutting step (S74) (see FIG. 22), only the wiring substrate 20 is cut, so that it becomes easier to generate bowl-shaped foreign matter than the MAP method described above. That is, as shown in FIGS. 40 and 41, the upper surface of the wiring board 20 that is a cutting object is opposed to a space (groove 41d) for inserting the dicing blade 40 without the resin body 4 (see FIG. 39). ing. For this reason, when a part of the wiring board 20 breaks during the cutting process, the broken part (uncut part) is easily pushed into the groove part 41d under the pressing force from the dicing blade 40. As a result, the pressing force from the dicing blade 40 is not sufficiently transmitted to the uncut portion pushed into the groove 41d, and an elongated bowl-like foreign material 100 is formed as shown in FIG.

  Thus, when sealing by an individual mold method, the bowl-shaped foreign material 100 is easy to be formed at a board | substrate cutting process. Therefore, by applying the singulation process described in the above embodiment, it is possible to suppress problems caused by the bowl-shaped foreign matter.

  In the above-described embodiment, the embodiment in which the suction fixing method, in which the wiring substrate 20 is fixed to the stage 42 in the substrate cutting step, is fixed by suction through the dicing jig 41, has been described. The fixing method is not limited to the suction fixing method, and for example, a so-called tape dicing method (adhesion fixing method) in which fixing is performed using an adhesive tape can be applied. 42 is a plan view showing a state in which a wiring board is bonded and fixed to a dicing tape which is a modification of the dicing jig shown in FIG. 24, and FIG. 43 is a cross-sectional view taken along the line KK in FIG. FIG. 44 is an enlarged cross-sectional view showing the periphery of the dicing area when the wiring board is cut while being fixed to the tape material shown in FIG.

  When the adhesive fixing method is applied, as shown in FIG. 42 and FIG. 43, the suction fixing method described in the above embodiment in that the wiring substrate 20 as a cutting object is adhesively fixed to a tape material (dicing tape) DT. Is different. The tape material DT is provided with an adhesive layer (adhesive layer) DT1 including, for example, an ultraviolet curable resin on one surface, and the adhesive layer DT1 is attached to the wiring substrate 20 (specifically, the surface 4b of the resin body 4). The wiring board 20 is bonded and fixed to the tape material DT. Further, a metal frame (frame body) RF such as stainless steel is disposed around the wiring substrate 20, and one surface of the frame RF is bonded to the adhesive layer DT1 of the tape material DT. That is, the wiring board 20 that is the object to be cut is fixed to the frame RF through the tape material DT having the adhesive layer DT1. In the individualization step when the adhesive fixing method is applied, the dicing jig 41 described in the above embodiment can be applied by replacing the tape material DT and the frame RF. As a method for fixing the frame RF and the tape material DT to the stage 42 (see FIG. 28), for example, an adsorption fixing method can be used as in the above-described embodiment.

  In the case of a method in which the object to be cut is bonded and fixed using the disposable tape material DT, a part of the tape material DT (a part on the bonding surface side on which the adhesive layer DT1 is formed) is removed by the dicing blade 40 in the substrate cutting process. Can be cut. Therefore, in the case of the method for manufacturing a MAP semiconductor device described in the above embodiment, a gap is not generated between the dicing region 20c of the wiring substrate 20 and the jig (tape material DT) in the substrate cutting step. Cutting can be performed. As a result, since it is difficult for breakage to occur during cutting, no bowl-shaped object is generated. However, in the manufacturing method of the semiconductor device 60 to which the individual mold method shown in FIG. 39 is applied, a bowl-shaped foreign matter is generated even when the tape material DT is used. That is, as shown in FIG. 44, since the dicing area 20c is disposed between the adjacent resin bodies 4, the dicing blade 40 is inserted between the tape material DT which is a jig and the wiring board 20 in the dicing area 20c. There is a space to do. For this reason, as shown in FIG. 44, the bowl-shaped foreign material 100 is generated.

  In this way, when sealing by the individual mold method and cutting by the adhesive fixing method using the tape material DT, the bowl-shaped foreign matter 100 is easily formed in the substrate cutting process. Therefore, by applying the singulation process described in the above embodiment, it is possible to suppress problems caused by the bowl-shaped foreign matter.

  In the above embodiment, as shown in FIG. 4, the BGA type semiconductor device 1 having the solder balls 5 attached as external electrodes has been described. In the manufacturing process of the BGA type semiconductor device 1, since the singulation process is performed after the solder balls 5 are attached to the wiring substrate 20, the bowl-shaped foreign matter is entangled with the solder balls 5 and is difficult to remove. In addition, if the solder ball 5 is entangled with a bowl-shaped foreign material, the solder ball 5 may be damaged. For this reason, in the method for manufacturing the BGA type semiconductor device 1, if the singulation process described in the above embodiment is applied, it is possible to suppress a decrease in reliability of the semiconductor device 1 due to damage to the solder balls 5. However, since the bowl-shaped foreign matter is generated regardless of the presence or absence of the solder ball 5, it can be applied to a method for manufacturing a semiconductor device in which the solder ball 5 is not formed. As an example of such a semiconductor device, for example, an LGA type semiconductor device 61 in which a land 13 for attaching a bonding member such as solder is exposed as in the semiconductor device 61 shown in FIG. Further, as a further modification of the LGA type semiconductor device 61, a method of sealing by an individual mold method, or an adhesive fixing using a tape material DT (see FIG. 43), which is sealed by an individual mold method. The method can be applied to a method for manufacturing a semiconductor device in which the wiring substrate 20 is cut by a method.

  In the example shown in FIGS. 28 to 30, the embodiment in which two types of nozzles, that is, the nozzle 45 that is a cooling nozzle and the nozzle 46 that is a cleaning nozzle, is provided. It is not limited to the example shown in FIG. 30. For example, as shown in FIG. 46 and FIG. 47, it can increase further. 46 is an explanatory diagram showing a modification to FIG. 30, and FIG. 47 is an explanatory diagram showing a modification to FIG. In the example shown in FIGS. 46 and 47, a nozzle 49 for adjusting the liquid flow direction is provided from the viewpoint of suppressing the flow of the liquid supplied from the nozzles 45 and 46 from being disturbed and spreading over the entire wiring board 20. ing. The nozzle 49 is provided on both sides of the nozzle 46, and a liquid (flow direction control liquid, for example, water) 49 a is supplied from the nozzle 49 toward the wiring substrate 20. The supply speed of the liquid 49a from the two nozzles 49 is, for example, about 0.5 to 1.2 liters per minute. The tip (discharge section) of the nozzle 49 is disposed in the case 44 in order to suppress the diffusion range of the liquid supplied from the nozzles 45 and 46. As a modification, a configuration in which a pressurizing fluid (gas, for example, air) is supplied to the nozzle 49 in order to increase the supply pressure of the liquid 49a is conceivable. However, if the supply pressure of the liquid 49a from the nozzle 49 is too high, the cutting scraps are wound up and the inside of the case 44 is contaminated. Therefore, do not supply the pressurizing fluid (gas, for example, air) to the nozzle 49. Is more preferable. Thus, by supplying the liquid 49a from the nozzle 49 during the cutting process, it is possible to suppress the liquid supplied from the nozzles 45 and 46 from spreading over the entire wiring board 20.

  Further, for example, from the viewpoint of more reliably preventing cutting waste from staying on the wiring substrate 20 that is the object to be cut, the cutting substrate is directed toward the periphery of the contact portion between the dicing blade 40 and the wiring substrate 20 during cutting with the dicing blade 40. In addition, a nozzle (not shown) for supplying a liquid (for example, water) can be further added. In other words, a plurality of cleaning nozzles for removing cutting waste generated during the cutting process are arranged in the case 44, and some of the plurality of cleaning nozzles are arranged on the end face (end portion) 40 b of the dicing blade 40. The cleaning liquid can be supplied toward the other side, and the other part can be supplied toward the periphery of the contact portion between the dicing blade 40 and the wiring board 20.

  However, when liquid is supplied from a large number of nozzles during cutting, the flow of water may be hindered depending on the supply pressure of the liquid. Therefore, it is preferable to minimize the number of nozzles from the viewpoint of preventing the mutual flow of water.

  The present invention is applicable to a semiconductor device that cuts a substrate on which a semiconductor chip is mounted with a dicing blade.

1, 60, 61 Semiconductor device 2 Semiconductor chip 2a Main surface (first main surface)
2b Back surface (second main surface)
2c Pad 3 Wire (conductive member)
4 Resin body (sealed body)
4a Sealing resin 4b Surface (upper surface)
5 Solder balls (solder material)
6 Adhesive 10 Wiring board (board)
10a Front surface 10b Back surface 10c Chip mounting area 11 Bonding lead 12 Wiring 12a Wiring (uppermost layer wiring)
12b wiring (lowermost layer wiring)
12c Feed line 13 Land (terminal, electrode)
14 Insulating layer (core layer)
14a upper surface 14b lower surface 14c side surface 15 wiring (wiring in via, interlayer wiring)
15a Via (hole)
16, 17 Insulating film (solder resist film, protective film)
16a, 17a Opening 16b, 17b Opening groove 16c Opening 20 Wiring board (board)
20a Device region 20b Frame portions 20c, 20c1, 20c2 Dicing region (dicing line)
30 Molding die 31 Upper die 31a Lower surface 31b Cavity 32 Lower die 32a Upper surface 40 Dicing blade (rotating blade)
40a End face 40b Side face 41 Dicing jig (jig)
41a Upper surface 41b Concave part (dent part, groove part)
41c Convex (wall)
41d Groove 41e Upper surface (pressing surface, support surface)
41f Ventilation hole 42a Holding part 42b Driving part 42c Air passage 43 Cutting tool 44 Case 45 Nozzle (cooling nozzle)
45a Coolant (liquid)
46 nozzles (cleaning nozzles)
46a Cleaning liquid (liquid)
47 Alignment section 48 Nozzle (foreign matter removal nozzle)
48a Liquid 48a1 Gas 48a2 Liquid 48b Discharge port 48c, 48d Supply port 49 Nozzle 49a Liquid 50 Dicer part (single piece processing part, dicing device)
50a supply part (cutting object supply part)
50a1 opening 50b cut part (cutting part)
50c Drying part 50d Discharge part (cutting object discharge part)
50d1 opening 51 substrate preparation part (cutting object preparation part)
52 Pickup processing section (post-processing section)
53, 54 Transport part 53a, 54a Hand 54c Suction part 54d Holding part 55 Pickup jig 100 Foreign matter D1, D2, D3 Arrow DM Dicing device DT Tape material (jig)
DT1 Adhesive layer RF frame VP Intake device

Claims (12)

A method for manufacturing a semiconductor device comprising the following steps:
(A) a cutting object supply unit, a cutting processing unit provided next to the cutting object supply unit, a movable processing table that travels between the cutting object supply unit and the cutting processing unit, and A case disposed in a cutting processing unit, a dicing blade provided in the case, a first nozzle provided in the case and for supplying a liquid toward the surface of the dicing blade, A second nozzle for supplying a liquid toward the end of the dicing blade; a second nozzle provided at a position spaced from the case in the cutting processing unit; and directed toward the object to be cut. Preparing a dicing apparatus comprising a third nozzle for supplying a liquid and a transport unit that holds and transports the object to be cut;
(B) A wiring board having a front surface and a back surface located on the opposite side of the front surface and having a semiconductor chip mounted on the front surface is placed on the processing table disposed in the cutting object supply unit via a jig. Placing step;
(C) After the step (b), the processing table on which the wiring board is disposed is moved to the cutting processing unit, and the dicing blade is moved while supplying the liquid from the first and second nozzles. Running in a first cutting region extending along a first direction of the wiring board and cutting the wiring board;
(D) After the step (c), while supplying the liquid from the third nozzle, moving the processing table from the cutting processing unit toward the cutting object supply unit;
(E) After the step (d), the dicing blade is moved in the first direction of the wiring board while the processing table is moved to the cutting processing unit and the liquid is supplied from the first and second nozzles. Running in a second cutting region extending along a second direction intersecting with and cutting the wiring board;
(F) After the step (e), while supplying the liquid from the third nozzle, moving the processing table from the cutting processing unit toward the cutting object supply unit;
(G) After the step (f), a step of holding and unloading the jig on which the separated wiring substrate is arranged by the transfer unit;
here,
In the step (c), there is a space for inserting the dicing blade between the first cutting region and the jig,
In the step (e), there is a space for inserting the dicing blade between the second cutting region and the jig,
In the step (c) and the step (e), the processing table is moved in a state where the supply of the liquid from the third nozzle is stopped. In claim 1,
The supply pressure of the liquid from the third nozzle in the step (d) and the step (f) is the supply of the liquid from the first and second nozzles in the step (c) and the step (e). A method for manufacturing a semiconductor device, wherein the method is higher than the pressure. In claim 2,
The third nozzle includes a first supply path for supplying a first fluid, a second supply path for supplying a second fluid, and a discharge port communicating with the first and second supply paths.
The method of manufacturing a semiconductor device, wherein the first and second supply paths are integrated in the third nozzle. In claim 3,
The method for manufacturing a semiconductor device, wherein the first fluid is a gas and the second fluid is a liquid. In claim 2,
The third nozzle includes a plurality of discharge ports arranged side by side in a direction intersecting the moving direction of the processing table in the step (d) and the step (f),
The method of manufacturing a semiconductor device, wherein in the step (d) and the step (f), the liquid is supplied from the plurality of discharge ports, respectively. In claim 5,
The width of the range of spraying of the liquid supplied from the plurality of discharge ports of the third nozzle in the step (d) and the step (f) is longer than the long side of the processing table. Device manufacturing method. In claim 2,
The method of manufacturing a semiconductor device, wherein the dicing blade is not moved while the cutting object is being cut in the steps (c) and (e). In claim 2,
In the step (b), the semiconductor device manufacturing method is characterized in that the surface of the wiring board is disposed so as to face the jig. In claim 2,
The wiring board disposed on the processing table in the step (b)
A plurality of device regions, and the first and second cutting regions disposed between the plurality of device regions,
On the surface of the wiring board, the semiconductor chip is mounted in each of the plurality of device regions, and a plurality of sealing bodies that seal the semiconductor chip are formed in each of the plurality of device regions. And
The method for manufacturing a semiconductor device, wherein the first and second cutting regions are arranged between adjacent sealing bodies among the plurality of sealing bodies. In claim 9,
The jig is a tape material provided with an adhesive layer on one surface,
(B) The method of manufacturing a semiconductor device, wherein the wiring board is fixed on the processing table in a state where the surfaces of the plurality of sealing bodies are bonded and fixed to the surface of the tape material. In claim 2,
In the step (b), the wiring substrate is sucked and fixed onto the processing table via the jig. In claim 2,
A method of manufacturing a semiconductor device, wherein a plurality of solder balls are formed in advance on the back surface of the wiring board disposed on the processing table in the step (b).

Images