JP2013016792A - Semiconductor device, semiconductor substrate, semiconductor substrate manufacturing method and semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce source/drain region resistance or contact resistance of an nMISFET of a group III-V semiconductor and a pMISFET of a group IV semiconductor, which respectively include sources/drains formed simultaneously in the same process on a single substrate.SOLUTION: A semiconductor device comprises a first-channel first MISFET formed on a first semiconductor crystal layer and a second-channel second MISFET formed on a second semiconductor crystal layer. A first source and a first drain of the first MISFET, and a second source and a second drain of the second MISFET are composed of the same conductive material and a work function Φof the conductive material satisfies at least one of relationships represented as Formula 1 and Formula 2: (Formula 1) φ<Φ<φ+E; (Formula 2) |Φ-φ|≤0.1 eV and |(φ+E)-Φ|≤0.1 eV, where φrepresents electron affinity of an N-type semiconductor crystal layer, and φand Erepresent electron affinity and a forbidden band width of a P-type semiconductor crystal layer, respectively.

Description

  The present invention relates to a semiconductor device, a semiconductor substrate, a semiconductor substrate manufacturing method, and a semiconductor device manufacturing method.

Group III-V compound semiconductors such as GaAs and InGaAs have high electron mobility, and group IV semiconductors such as Ge and SiGe have high hole mobility. Therefore, if a III-V compound semiconductor constitutes an N-channel MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and a IV-channel semiconductor constitutes a P-channel MOSFET, a high-performance CMOSFET (Complementary Metal-Oxide-Semiconductor Field Effect Transistor) can be realized. Non-Patent Document 1 discloses a CMOSFET structure in which an N-channel MOSFET using a III-V group compound semiconductor as a channel and a P-channel MOSFET using Ge as a channel are formed on a single substrate.
Non-Patent Document 1 S. Takagi, et al., SSE, vol. 51, pp. 526-536, 2007.

  An N-channel MISFET (Metal-Insulator-Semiconductor Field-Effect Transistor) (hereinafter simply referred to as “nMISFET”) having a group III-V compound semiconductor as a channel and a P-channel MISFET (hereinafter simply referred to as “n-MISFET”) having a channel as a group IV semiconductor. In order to form “pMISFET” on a single substrate, a technique for forming a group III-V compound semiconductor for nMISFET and a group IV semiconductor for pMISFET on the same substrate is required. In consideration of manufacturing as LSI (Large Scale Integration), a III-V group compound semiconductor crystal layer for nMISFET and a group IV semiconductor crystal layer for pMISFET on a silicon substrate capable of utilizing existing manufacturing equipment and existing processes. Is preferably formed.

  Also, in order to efficiently manufacture a CMISFET (Complementary Metal-Insulator-Semiconductor Field-Effect Transistor) composed of nMISFET and pMISFET as an LSI at low cost, a manufacturing process in which nMISFET and pMISFET are formed simultaneously is adopted. Is preferred. In particular, if the source / drain of the nMISFET and the source / drain of the pMISFET can be formed at the same time, the process can be simplified, and the device can be easily reduced in size and miniaturized.

  For example, the source / drain formation region of the nMISFET and the source / drain formation region of the pMISFET are formed as a thin film of a material to be the source and drain, and further patterned by photolithography or the like, thereby forming the source / drain of the nMISFET The source and drain of the pMISFET can be formed simultaneously. However, the III-V group compound semiconductor crystal layer in which the nMISFET is formed and the IV group semiconductor crystal layer in which the pMISFET is formed have different materials. For this reason, the resistance of one or both of the source / drain regions of the nMISFET or pMISFET increases, or the contact resistance between the source / drain regions of one or both of the nMISFET or pMISFET and the source / drain electrodes increases. Therefore, it is difficult to reduce the resistance of the source / drain regions of both nMISFET and pMISFET or the contact resistance with the source / drain electrodes.

  The object of the present invention is to form a CMISFET composed of an nMISFET whose channel is a III-V group compound semiconductor and a pMISFET whose channel is a group IV semiconductor on one substrate. It is an object of the present invention to provide a semiconductor device and a manufacturing method thereof in which each source and each drain are formed at the same time and the resistance of the source / drain region or the contact resistance with the source / drain electrode is reduced. Moreover, it is providing the semiconductor substrate suitable for such a technique.

In order to solve the above problems, in the first aspect of the present invention, the base substrate, the first semiconductor crystal layer located above a part of the surface of the base substrate, and a part of the surface of the base substrate are different. A second semiconductor crystal layer positioned above the portion, a part of the first semiconductor crystal layer as a channel, a first MISFET having a first source and a first drain, and a part of the second semiconductor crystal layer as a channel; A second MISFET having a second source and a second drain, wherein the first MISFET is a first channel type MISFET, and the second MISFET is a second channel type MISFET different from the first channel type. a first source, a first drain, the second source and second drain, made of the same conductive material, the work function [Phi _M of conductive material, the number 1 and number 2 of less Providing a semiconductor device which satisfies one of the relations.
(Expression 1) φ ₁ <Φ _M <φ ₂ + E _g2
(Equation 2) | Φ _M −φ ₁ | ≦ 0.1 eV and | (φ ₂ + E _g2 ) −Φ _M | ≦ 0.1 eV

However, phi _1, of the first semiconductor crystal layer and the second semiconductor crystal layer, the electron affinity of the crystalline part of which constitutes a semiconductor crystal layer of better functioning as an N-type channel, phi ₂ and E _g2 are the Of the first semiconductor crystal layer and the second semiconductor crystal layer, the electron affinity and the forbidden band width of the crystal that constitutes the semiconductor crystal layer in which one part functions as a P-type channel are shown.

  Positioned between the base substrate and the first semiconductor crystal layer, positioned between the base substrate and the second semiconductor crystal layer, and a first separation layer for electrically separating the base substrate and the first semiconductor crystal layer. And a second separation layer for electrically separating the base substrate and the second semiconductor crystal layer.

  The base substrate and the first semiconductor crystal layer are in contact with each other at the bonding surface, the region of the base substrate in the vicinity of the bonding surface contains impurity atoms exhibiting p-type or n-type conductivity, and the first semiconductor in the vicinity of the bonding surface The region of the crystal layer may contain an impurity atom having a conductivity type different from that of the impurity atom contained in the base substrate, and in this case, it is located between the base substrate and the second semiconductor crystal layer. In addition, the semiconductor device may further include a first separation layer that electrically separates the base substrate and the second semiconductor crystal layer.

  The base substrate may be in contact with the first separation layer. In this case, the region of the base substrate in contact with the first separation layer is conductive, and the voltage applied to the region of the base substrate in contact with the first separation layer is It may act as a back gate voltage to 1 MISFET. The base substrate may be in contact with the second separation layer. In this case, the region in contact with the second separation layer of the base substrate is conductive, and the voltage applied to the region of the base substrate in contact with the second separation layer is It may act as a back gate voltage to the 2MISFET.

  When the first semiconductor crystal layer is made of a group IV semiconductor crystal, the first MISFET is preferably a P channel type MISFET, and when the second semiconductor crystal layer is made of a group III-V compound semiconductor crystal, the second MISFET is an N channel type. A MISFET is preferable. When the first semiconductor crystal layer is made of a III-V group compound semiconductor crystal, the first MISFET is preferably an N channel type MISFET, and when the second semiconductor crystal layer is made of a group IV semiconductor crystal, the second MISFET is a P channel type. A MISFET is preferable.

  Examples of the conductive material include TiN, TaN, graphene, HfN, and WN.

  According to a second aspect of the present invention, there is provided a semiconductor substrate used in the semiconductor device of the first aspect, a base substrate, a first semiconductor crystal layer located above a part of the base substrate surface, and the base substrate surface. A semiconductor substrate having a second semiconductor crystal layer positioned above another part different from a part of the semiconductor substrate.

  And a separation layer that is located between the base substrate and the first semiconductor crystal layer or the second semiconductor crystal layer and electrically separates the base substrate from the first semiconductor crystal layer or the second semiconductor crystal layer. Good. In this case, the separation layer may be made of an amorphous insulator. Alternatively, the separation layer includes a semiconductor crystal having a forbidden band width larger than the forbidden band width of the semiconductor crystal constituting the semiconductor crystal layer positioned on the separation layer.

  One semiconductor crystal layer selected from the first semiconductor crystal layer and the second semiconductor crystal layer may be in contact with the base substrate at the bonding surface. In this case, a p-type or containing impurity atoms exhibiting n-type conductivity, and containing impurity atoms exhibiting a conductivity type different from the conductivity type indicated by the impurity atoms contained in the base substrate in the region of the semiconductor crystal layer in the vicinity of the junction surface Also good.

  There may be a plurality of first semiconductor crystal layers and a plurality of second semiconductor crystal layers. In this case, each of the plurality of first semiconductor crystal layers is regularly arranged in a plane parallel to the upper surface of the base substrate. The plurality of second semiconductor crystal layers may be arranged regularly in a plane parallel to the upper surface of the base substrate.

  According to a third aspect of the present invention, there is provided a method of manufacturing a semiconductor substrate according to the second aspect, wherein the first semiconductor crystal layer forming step forms the first semiconductor crystal layer above a part of the surface of the base substrate. A second semiconductor crystal layer forming step for forming a second semiconductor crystal layer above another portion different from a part of the surface of the base substrate, and the second semiconductor crystal layer forming step is a semiconductor crystal layer forming substrate. An epitaxial growth step of forming a second semiconductor crystal layer thereon by an epitaxial crystal growth method; and a base substrate on the base substrate, on the second semiconductor crystal layer, or on both the base substrate and the second semiconductor crystal layer. Forming a second separation layer that electrically separates the second semiconductor crystal layer from the second semiconductor crystal layer, and the second semiconductor crystal layer on the base substrate so that the second separation layer on the base substrate and the second semiconductor crystal layer are joined to each other. of The base substrate and the semiconductor crystal layer are formed so that the two separation layers and the base substrate are joined, or so that the second separation layer on the base substrate and the second separation layer on the second semiconductor crystal layer are joined. There is provided a method for manufacturing a semiconductor substrate, comprising a bonding step of bonding a substrate.

  The first semiconductor crystal layer forming step includes an epitaxial growth step of forming the first semiconductor crystal layer on the semiconductor crystal layer formation substrate by an epitaxial crystal growth method, and the base substrate, the first semiconductor crystal layer, or the base substrate. Forming a first separation layer for electrically separating the base substrate and the first semiconductor crystal layer on both the first semiconductor crystal layer and the first semiconductor crystal layer; and the first separation layer and the first semiconductor crystal on the base substrate. The first separation layer on the first semiconductor crystal layer and the base substrate are joined so that the layers are joined, or the first separation layer on the base substrate and the first separation on the first semiconductor crystal layer are joined A bonding step of bonding the base substrate and the semiconductor crystal layer forming substrate may be provided so that the layers are bonded to each other.

  When the first semiconductor crystal layer is made of SiGe and the second semiconductor crystal layer is made of a group III-V compound semiconductor crystal, the first separation layer made of an insulator is formed on the base substrate before the first semiconductor crystal layer formation step. Forming a first semiconductor crystal layer, wherein the first semiconductor crystal layer forming step forms a SiGe layer as a starting material of the first semiconductor crystal layer on the first separation layer; Heating the layer in an oxidizing atmosphere to oxidize the surface to increase the concentration of Ge atoms in the SiGe layer and etching the SiGe layer above the other part of the base substrate surface. Good.

  When the first semiconductor crystal layer is made of a group IV semiconductor crystal and the second semiconductor crystal layer is made of a group III-V compound semiconductor crystal, the first layer made of an insulator is formed on the surface of the semiconductor layer material substrate made of the group IV semiconductor crystal. Forming a separation layer; implanting cations through the first separation layer to a predetermined depth of separation of the semiconductor layer material substrate; and joining the surface of the first separation layer and the surface of the base substrate. Bonding the semiconductor layer material substrate and the base substrate, heating the semiconductor layer material substrate and the base substrate, and reacting the cations implanted to the predetermined separation depth with the group IV atoms constituting the semiconductor layer material substrate Thus, the IV modified by the step of modifying the group IV semiconductor crystal located at the planned separation depth and separating the semiconductor layer material substrate and the base substrate. The step of peeling the group IV semiconductor crystal located on the base substrate side from the modified portion of the semiconductor crystal from the semiconductor layer material substrate, and the surface of the base substrate among the semiconductor crystal layers made of the group IV semiconductor crystal remaining on the base substrate Etching a region located above the portion.

  A first separation layer made of a semiconductor crystal having a forbidden band width larger than the forbidden band width of the semiconductor crystal constituting the first semiconductor crystal layer is selectively formed only above a part of the surface of the base substrate by a selective epitaxial growth method. In this case, as the first semiconductor crystal layer formation step, a step of selectively forming the first semiconductor crystal layer only on the first separation layer by a selective epitaxial growth method can be mentioned. .

  The method may further include the step of forming a first separation layer made of a semiconductor crystal having a forbidden band width larger than the forbidden band width of the semiconductor crystal constituting the first semiconductor crystal layer, by epitaxial growth over the surface of the base substrate. In this case, the step of forming the first semiconductor crystal layer includes the step of forming the first semiconductor crystal layer on the first separation layer by an epitaxial growth method, the first semiconductor crystal layer above the other part of the surface of the base substrate, and Etching the first separation layer.

  The first semiconductor crystal layer forming step may be a step of selectively forming the first semiconductor crystal layer only above a part of the surface of the base substrate by a selective epitaxial growth method. The first semiconductor crystal layer forming step includes: forming a first semiconductor crystal layer above the base substrate surface by an epitaxial growth method; and etching the first semiconductor crystal layer above the other part of the base substrate surface. May be included. In this case, impurity atoms having p-type or n-type conductivity may be contained in the vicinity of the surface of the base substrate, and the impurities contained in the base substrate in the step of forming the first semiconductor crystal layer by the epitaxial growth method. The first semiconductor crystal layer may be doped with impurity atoms having a conductivity type different from the conductivity type indicated by the atoms.

  Forming a crystalline sacrificial layer on the surface of the semiconductor crystal layer forming substrate by epitaxial crystal growth before forming the semiconductor crystal layer on the semiconductor crystal layer forming substrate; and a base substrate, a semiconductor crystal layer forming substrate, And a step of separating the semiconductor crystal layer formed on the semiconductor crystal layer forming substrate by the epitaxial crystal growth method and the semiconductor crystal layer forming substrate by removing the crystalline sacrificial layer after bonding. May be.

  Either the step of epitaxially growing the first semiconductor crystal layer and then patterning the first semiconductor crystal layer in a regular arrangement, or the step of selectively epitaxially growing the first semiconductor crystal layer in a regular arrangement in advance And after the second semiconductor crystal layer is epitaxially grown, the second semiconductor crystal layer is patterned into a regular arrangement, or the second semiconductor crystal layer is selectively epitaxially grown in a regular arrangement in advance. These steps may be included.

In a fourth aspect of the present invention, a step of manufacturing a semiconductor substrate having a first semiconductor crystal layer and a second semiconductor crystal layer using the method for manufacturing a semiconductor substrate of the third aspect, and the first semiconductor crystal layer Forming a conductive material having a work function Φ _M satisfying at least one of the relations of Formula 1 and Formula 2 on each of the second semiconductor crystal layers, and a conductive material in a region where the gate electrode is formed Removing the conductive material, forming a gate insulating layer and a gate electrode in the region where the conductive material has been removed, patterning and heating the conductive material, and forming a first on both sides of the gate electrode on the first semiconductor crystal. Forming a source and a first drain, and forming a second source and a second drain on both sides of the gate electrode on the second semiconductor crystal. To provide.
(Expression 1) φ ₁ <Φ _M <φ ₂ + E _g2
(Equation 2) | Φ _M −φ ₁ | ≦ 0.1 eV and | (φ ₂ + E _g2 ) −Φ _M | ≦ 0.1 eV

However, phi _1, of the first semiconductor crystal layer and the second semiconductor crystal layer, the electron affinity of the crystalline part of which constitutes a semiconductor crystal layer of better functioning as an N-type channel, phi ₂ and E _g2 are the Of the first semiconductor crystal layer and the second semiconductor crystal layer, the electron affinity and the forbidden band width of the crystal that constitutes the semiconductor crystal layer in which one part functions as a P-type channel are shown.

1 shows a cross section of a semiconductor device 100. 2 shows a cross section of the semiconductor device 100 in the manufacturing process. 2 shows a cross section of the semiconductor device 100 in the manufacturing process. 2 shows a cross section of the semiconductor device 100 in the manufacturing process. 2 shows a cross section of the semiconductor device 100 in the manufacturing process. 2 shows a cross section of the semiconductor device 100 in the manufacturing process. 2 shows a cross section of the semiconductor device 100 in the manufacturing process. 2 shows a cross section of the semiconductor device 100 in the manufacturing process. The cross section in the manufacture process of another semiconductor device is shown. The cross section in the manufacture process of another semiconductor device is shown. The cross section in the manufacture process of another semiconductor device is shown. The cross section in the manufacture process of another semiconductor device is shown. A cross section of a semiconductor device 200 is shown. 2 shows a cross section of the semiconductor device 200 in the manufacturing process. It is the SEM photograph which observed nMOSFET from the upper part. It is the TEM photograph which observed the cross section of the gate part of nMOSFET. It is a graph which shows a gate voltage versus source current characteristic. It is a graph which shows a gate voltage versus source current characteristic. It is a graph which shows a gate voltage versus source current characteristic. It is the graph which showed SS value with respect to gate length. It is the graph which showed the value of DIBL with respect to gate length.

  FIG. 1 shows a cross section of a semiconductor device 100. The semiconductor device 100 includes a base substrate 102, a first semiconductor crystal layer 104, and a second semiconductor crystal layer 106. The semiconductor device 100 of this example includes a first separation layer 108 between the base substrate 102 and the first semiconductor crystal layer 104, and a second separation layer 110 between the base substrate 102 and the second semiconductor crystal layer 106. Have Note that, from the example shown in FIG. 1, the invention of a semiconductor substrate including the base substrate 102, the first semiconductor crystal layer 104, and the second semiconductor crystal layer 106, the base substrate 102, the first separation layer 108, at least two inventions, including the semiconductor substrate invention having the first semiconductor crystal layer 104, the second separation layer 110, and the second semiconductor crystal layer 106 as constituent elements. A first MISFET 120 is formed on the first semiconductor crystal layer 104, and a second MISFET 130 is formed on the second semiconductor crystal layer 106.

  As the base substrate 102, a substrate whose surface is a silicon crystal can be given. Examples of the substrate whose surface is a silicon crystal include a silicon substrate and an SOI (Silicon on Insulator) substrate, and a silicon substrate is preferable. By using a substrate whose surface is a silicon crystal as the base substrate 102, an existing manufacturing apparatus and an existing manufacturing process can be used, and the efficiency of research and development and manufacturing can be improved. The base substrate 102 is not limited to a substrate whose surface is a silicon crystal, and may be an insulator substrate such as glass, ceramics, and plastic, a conductor substrate such as metal, or a semiconductor substrate such as silicon carbide.

  The first semiconductor crystal layer 104 is located above a part of the surface of the base substrate 102. That is, the first semiconductor crystal layer 104 is located above a partial region in the base substrate 102. The first semiconductor crystal layer 104 is made of a group IV semiconductor crystal or a group III-V compound semiconductor crystal. The thickness of the first semiconductor crystal layer 104 is preferably 20 nm or less. By setting the thickness of the first semiconductor crystal layer 104 to 20 nm or less, the first MISFET 120 having an extremely thin film body can be configured. By making the body of the first MISFET 120 an extremely thin film, the short channel effect can be suppressed and the leakage current of the first MISFET 120 can be reduced.

  The second semiconductor crystal layer 106 is located above another part different from the part of the surface of the base substrate 102. That is, the second semiconductor crystal layer 106 is located above the region of the base substrate 102 where the first semiconductor crystal layer 104 is not located above. The second semiconductor crystal layer 106 is made of a III-V compound semiconductor crystal or a group IV semiconductor crystal. The thickness of the second semiconductor crystal layer 106 is preferably 20 nm or less. By setting the thickness of the second semiconductor crystal layer 106 to 20 nm or less, the second MISFET 130 having an extremely thin film body can be configured. By making the body of the second MISFET 130 an extremely thin film, the short channel effect can be suppressed and the leakage current of the second MISFET 130 can be reduced.

  Since the group III-V compound semiconductor crystal has a high electron mobility and the group IV semiconductor crystal, particularly Ge, has a high hole mobility, it is preferable to form an N-channel MISFET in the group III-V compound semiconductor crystal layer. A P-channel MISFET is preferably formed in the group IV semiconductor crystal layer. That is, when the first semiconductor crystal layer 104 is made of a group IV semiconductor crystal and the second semiconductor crystal layer 106 is made of a group III-V compound semiconductor crystal, the first MISFET 120 is a P-channel MISFET and the second MISFET 130 is an N-channel type. A MISFET is preferable.

  Conversely, when the first semiconductor crystal layer 104 is made of a III-V group compound semiconductor crystal and the second semiconductor crystal layer 106 is made of a group IV semiconductor crystal, the first MISFET 120 is an N-channel MISFET and the second MISFET 130 is a P-channel. A type MISFET is preferable. Thereby, the performance of each of the first MISFET 120 and the second MISFET 130 can be enhanced, and the performance of the CMISFET composed of the first MISFET 120 and the second MISFET 130 can be maximized.

Examples of the group IV semiconductor crystal include a Ge crystal and a Si _x Ge _1-x (0 ≦ x <1) crystal. When the group IV semiconductor crystal is a Si _x Ge _1-x crystal, x is preferably 0.10 or less. Examples of the III-V compound semiconductor crystal include In _x Ga _1-x As (0 <x <1) crystal, InAs crystal, GaAs crystal, and InP crystal. Examples of the III-V compound semiconductor crystal include a mixed crystal of a III-V compound semiconductor that lattice matches or pseudo-lattice matches with GaAs or InP. In addition, examples of the III-V compound semiconductor crystal include a stacked body of the mixed crystal and In _x Ga _1-x As (0 <x <1) crystal, InAs crystal, GaAs crystal, or InP crystal. As the III-V group compound semiconductor crystal, an In _x Ga _1-x As (0 <x <1) crystal and an InAs crystal are preferable, and an InAs crystal is more preferable.

  The first separation layer 108 is located between the base substrate 102 and the first semiconductor crystal layer 104. The first separation layer 108 electrically separates the base substrate 102 and the first semiconductor crystal layer 104.

The first separation layer 108 may be made of an amorphous insulator. When the first semiconductor crystal layer 104 and the first separation layer 108 are formed by a bonding method, an oxidation concentration method, or a smart cut method, the first separation layer 108 is made of an amorphous insulator. As the first separation layer 108 made of an amorphous insulator, Al ₂ O ₃ , AlN, Ta ₂ O ₅ , ZrO ₂ , HfO ₂ , La ₂ O ₃ , SiO _x (for example, SiO ₂ ), SiN _x (for example, Si) ₃ N ₄ ) and SiO _x N _y , or a laminate of at least two layers selected from these layers.

  The first separation layer 108 may be made of a semiconductor crystal having a forbidden band width larger than the forbidden band width of the semiconductor crystal constituting the first semiconductor crystal layer 104. Such a semiconductor crystal can be formed by an epitaxial crystal growth method. When the first semiconductor crystal layer 104 is an InGaAs crystal layer or a GaAs crystal layer, examples of the semiconductor crystal constituting the first separation layer 108 include an AlGaAs crystal, an AlInGaP crystal, an AlGaInAs crystal, and an InP crystal. In the case where the first semiconductor crystal layer 104 is a Ge crystal layer, the semiconductor crystal constituting the first separation layer 108 includes a SiGe crystal, a Si crystal, a SiC crystal, or a C crystal.

  The second separation layer 110 is located between the base substrate 102 and the second semiconductor crystal layer 106. The second separation layer 110 electrically separates the base substrate 102 and the second semiconductor crystal layer 106.

The second separation layer 110 may be made of an amorphous insulator. When the second semiconductor crystal layer 106 and the second separation layer 110 are formed by a bonding method, the second separation layer 110 becomes an amorphous insulator. As the second separation layer 110 made of an amorphous insulator, Al ₂ O ₃ , AlN, Ta ₂ O ₅ , ZrO ₂ , HfO ₂ , La ₂ O ₃ , SiO _x (for example, SiO ₂ ), SiN _x (for example, Si) ₃ N ₄ ) and SiO _x N _y , or a laminate of at least two layers selected from these layers.

  The second separation layer 110 may be made of a semiconductor crystal having a forbidden band width larger than the forbidden band width of the semiconductor crystal constituting the second semiconductor crystal layer 106. Such a semiconductor crystal can be formed by an epitaxial crystal growth method. When the second semiconductor crystal layer 106 is an InGaAs crystal layer or a GaAs crystal layer, examples of the semiconductor crystal constituting the second separation layer 110 include an AlGaAs crystal, an AlInGaP crystal, an AlGaInAs crystal, and an InP crystal. In the case where the second semiconductor crystal layer 106 is a Ge crystal layer, examples of the semiconductor crystal constituting the second separation layer 110 include SiGe crystal, Si crystal, SiC crystal, and C crystal.

  The first MISFET 120 is formed in the first semiconductor crystal layer 104 and has a first gate 122, a first source 124 and a first drain 126. A first gate metal 123 is formed on the first gate 122, and a first source electrode 125 and a first drain electrode 127 are formed on the first source 124 and the first drain 126, respectively. . Examples of the material constituting the first gate metal 123, the first source electrode 125, and the first drain electrode 127 include Ti, Ta, W, Al, Cu, Au, and a stacked body thereof.

The first source 124 and the first drain 126 are made of a conductive material formed on the first semiconductor crystal layer 104, and form a raised source / drain. Examples of the conductive material include TiN, TaN, graphene, HfN, and WN. A first gate 122 is formed between the first source 124 and the first drain 126. The first gate 122 is insulated from the first source 124, the first drain 126, and the first semiconductor crystal layer 104 by the insulating layer 114. Examples of the material constituting the first gate 122 include TiN, TaN, graphene, HfN, and WN. As the insulating layer 114, Al ₂ O ₃ , AlN, Ta ₂ O ₅ , ZrO ₂ , HfO ₂ , La ₂ O ₃ , SiO _x (for example, SiO ₂ ), SiN _x (for example, Si ₃ N ₄ ), and SiO _x N _y Among them, a layer composed of at least one of them, or a laminate of at least two layers selected from these.

  A part 104 a of the first semiconductor crystal layer 104 between the first source 124 and the first drain 126, the first gate 122 facing through the insulating layer 114, functions as a channel of the first MISFET 120. A part 114 a of the insulating layer 114 is formed in a region sandwiched between the part 104 a of the first semiconductor crystal layer 104 and the first gate 122, which is the channel region. The portion 114a may function as a gate insulating layer.

  The second MISFET 130 is formed in the second semiconductor crystal layer 106 and has a second gate 132, a second source 134, and a second drain 136. A second gate metal 133 is formed on the second gate 132, and a second source electrode 135 and a second drain electrode 137 are formed on the second source 134 and the second drain 136, respectively. . Examples of the material constituting the second gate metal 133, the second source electrode 135, and the second drain electrode 137 include Ti, Ta, W, Al, Cu, Au, or a laminate thereof.

  The second source 134 and the second drain 136 are made of a conductive material formed on the second semiconductor crystal layer 106, and form a raised source / drain. Examples of the conductive material include TiN, TaN, graphene, HfN, and WN. A second gate 132 is formed between the second source 134 and the second drain 136. The second gate 132 is insulated from the second source 134, the second drain 136, and the second semiconductor crystal layer 106 by the insulating layer 114 similar to the first MISFET 120. Examples of the material constituting the second gate 132 include TiN, TaN, graphene, HfN, and WN.

  A part 106 a of the second semiconductor crystal layer 106 between the second source 134 and the second drain 136, the second gate 132 facing through the insulating layer 114, functions as a channel of the second MISFET 130. A part 114 a of the insulating layer 114 is formed in a region sandwiched between the part 106 a of the second semiconductor crystal layer 106 and the second gate 132 which is the channel region. The portion 114a may function as a gate insulating layer.

The first source 124, the first drain 126, the second source 134, and the second drain 136 are made of the same conductive material, and the work function Φ _M of the conductive material satisfies the relationship of Equation 1 or Equation 2.
(Expression 1) φ ₁ <Φ _M <φ ₂ + E _g2
(Equation 2) | Φ _M −φ ₁ | ≦ 0.1 eV and | (φ ₂ + E _g2 ) −Φ _M | ≦ 0.1 eV

However, phi _1, of the first semiconductor crystal layer 104 and the second semiconductor crystal layer 106, shows the electron affinity of the crystalline part of which constitutes a semiconductor crystal layer of better functioning as an N-type channel. φ ₂ and E _g2 indicate the electron affinity and the forbidden band width of the crystal that constitutes the semiconductor crystal layer of which part of the first semiconductor crystal layer 104 and the second semiconductor crystal layer 106 functions as a P-type channel. . Note that the work function Φ _M of the conductive material may satisfy both of the relations of Formula 1 and Formula 2.

As described above, the source / drain (first source 124 and first drain 126) of the first MISFET 120 and the source / drain (second source 134 and second drain 136) of the second MISFET 130 are made of the same conductive material. This is a configuration that enables the manufacture of the part using the same material film, and means that the manufacturing process can be simplified. In the first MISFET 120 and the second MISFET 130, the gate width can be easily controlled by the space between the source and the drain (etching groove interval). As a result, miniaturization becomes easy. Further, since the work functions of the conductive materials constituting the first source 124, the first drain 126, the second source 134, and the second drain 136 satisfy the relationship of the above formula 1 or 2, the source / drain The contact resistance between the region and the semiconductor crystal layer can be reduced. For example, if the work function Φ _M of the conductive material satisfies the relationship of Equation ₁ , the difference between Φ _M and φ ₁ and the difference between Φ _M and φ ₂ + E _g2 are φ ₁ and φ ₂ at the maximum. It becomes smaller than the difference from + _Eg2 . The contact resistance between each source / drain region and the semiconductor crystal layer can be reduced. Moreover, if the work function Φ _M of the conductive material satisfies the relationship of Equation ₂ , the difference between Φ _M and φ ₁ and the difference between Φ _M and φ ₂ + E _g2 can be suppressed to 0.1 eV or less. . For this reason, the contact resistance between each source / drain region and the semiconductor crystal layer can be reduced. As a result, the manufacturing process for manufacturing the CMISFET can be simplified, the miniaturization can be facilitated, and the performance of each FET can be enhanced.

  2 to 8 show cross sections of the semiconductor device 100 in the manufacturing process. First, the base substrate 102 and the semiconductor crystal layer formation substrate 140 are prepared, and the first semiconductor crystal layer 104 is formed on the semiconductor crystal layer formation substrate 140 by an epitaxial crystal growth method. Thereafter, a first separation layer 108 is formed on the first semiconductor crystal layer 104. The first separation layer 108 is formed by a thin film forming method such as an ALD (Atomic Layer Deposition) method, a thermal oxidation method, a vapor deposition method, a CVD (Chemical Vapor Deposition) method, or a sputtering method.

  When the first semiconductor crystal layer 104 is made of a III-V group compound semiconductor crystal, an InP substrate or a GaAs substrate can be selected as the semiconductor crystal layer forming substrate 140. When the first semiconductor crystal layer 104 is made of a group IV semiconductor crystal, a Ge substrate, Si substrate, SiC substrate, or GaAs substrate can be selected as the semiconductor crystal layer formation substrate 140.

An MOCVD (Metal Organic Chemical Vapor Deposition) method can be used for epitaxial crystal growth of the first semiconductor crystal layer 104. When the III-V compound semiconductor crystal layer is formed by MOCVD, TMIn (trimethylindium) is used for In source, TMGa (trimethylgallium) is used for Ga source, AsH ₃ (arsine) is used for As source, and P source is used. For this, PH ₃ (phosphine) can be used. Hydrogen can be used as the carrier gas. The reaction temperature can be appropriately selected in the range of 300 ° C to 900 ° C, preferably in the range of 450 to 750 ° C. When the group IV semiconductor crystal layer is formed by a CVD method, GeH ₄ (germane) can be used for the Ge source, SiH ₄ (silane), or Si ₂ H ₆ (disilane) can be used for the Si source. A compound in which a part of the plurality of hydrogen atom groups is substituted with a chlorine atom or a hydrocarbon group can also be used. Hydrogen can be used as the carrier gas. The reaction temperature can be appropriately selected in the range of 300 ° C to 900 ° C, preferably in the range of 450 to 750 ° C. The thickness of the epitaxial growth layer can be controlled by appropriately selecting the source gas supply amount and the reaction time.

  As shown in FIG. 2, the surface of the first separation layer 108 and the surface of the base substrate 102 are activated with an argon beam 150. Thereafter, as shown in FIG. 3, the surface of the first separation layer 108 activated by the argon beam 150 is bonded and bonded to a part of the surface of the base substrate 102. Bonding can be performed at room temperature. The activation does not need to be performed by the argon beam 150, but may be a beam of other rare gas or the like. Thereafter, the semiconductor crystal layer forming substrate 140 is etched and removed. As a result, the first separation layer 108 and the first semiconductor crystal layer 104 are formed on part of the surface of the base substrate 102. Note that a sulfur termination treatment for terminating the surface of the first semiconductor crystal layer 104 with sulfur atoms may be performed between the formation of the first semiconductor crystal layer 104 and the formation of the first separation layer 108.

  In the example illustrated in FIGS. 2 and 3, the first separation layer 108 is formed only on the first semiconductor crystal layer 104 and the surface of the first separation layer 108 and the surface of the base substrate 102 are bonded to each other. However, the first separation layer 108 is also formed on the base substrate 102, and the surface of the first separation layer 108 on the first semiconductor crystal layer 104 and the surface of the first separation layer 108 on the base substrate 102 are bonded together. May be. In this case, it is preferable that the surface of the first separation layer 108 to be bonded is subjected to a hydrophilic treatment. When the hydrophilic treatment is performed, it is preferable that the first separation layers 108 are heated and bonded together. Alternatively, the first separation layer 108 may be formed only on the base substrate 102, and the surface of the first semiconductor crystal layer 104 and the surface of the first separation layer 108 on the base substrate 102 may be bonded to each other.

  In the example shown in FIGS. 2 and 3, after the first separation layer 108 and the first semiconductor crystal layer 104 are bonded to the base substrate 102, the first separation layer 108 and the first semiconductor crystal layer 104 are bonded to the semiconductor crystal layer formation substrate. Although the example of separating from 140 has been described, after separating the first separation layer 108 and the first semiconductor crystal layer 104 from the semiconductor crystal layer formation substrate 140, the first separation layer 108 and the first semiconductor crystal layer 104 are separated from the base substrate 102. You may stick together. In this case, after the first separation layer 108 and the first semiconductor crystal layer 104 are separated from the semiconductor crystal layer formation substrate 140 and before being bonded to the base substrate 102, the first separation layer 108 and the first separation layer 108 are formed on an appropriate transfer substrate. It is preferable to hold one semiconductor crystal layer 104.

  Next, the semiconductor crystal layer forming substrate 160 is prepared, and the second semiconductor crystal layer 106 is formed on the semiconductor crystal layer forming substrate 160 by an epitaxial crystal growth method. Thereafter, the second separation layer 110 is formed on the second semiconductor crystal layer 106. The second separation layer 110 is formed by a thin film forming method such as an ALD method, a thermal oxidation method, a vapor deposition method, a CVD method, or a sputtering method. Note that a sulfur termination treatment for terminating the surface of the second semiconductor crystal layer 106 with sulfur atoms may be performed before the formation of the second separation layer 110.

  When the second semiconductor crystal layer 106 is made of a III-V group compound semiconductor crystal, an InP substrate or a GaAs substrate can be selected as the semiconductor crystal layer forming substrate 160. When the second semiconductor crystal layer 106 is made of a group IV semiconductor crystal, a Ge substrate, Si substrate, SiC substrate, or GaAs substrate can be selected as the semiconductor crystal layer forming substrate 160.

  An MOCVD method can be used for epitaxial crystal growth of the second semiconductor crystal layer 106. Gas used in the MOCVD method, reaction temperature conditions, and the like are the same as those for the first semiconductor crystal layer 104.

  As shown in FIG. 4, the surface of the base substrate 102 and the surface of the second separation layer 110 in the region where the first separation layer 108 and the first semiconductor crystal layer 104 are not formed are activated with an argon beam 150. After that, as shown in FIG. 5, the surface of the second separation layer 110 is bonded and bonded to the surface of the base substrate 102 in a region where the first separation layer 108 and the first semiconductor crystal layer 104 are not formed. Bonding can be performed at room temperature. The activation does not need to be performed by the argon beam 150 but may be a beam of other rare gas or the like. Thereafter, the semiconductor crystal layer forming substrate 160 is removed by etching with an HCl solution or the like. As a result, the second separation layer 110 and the second semiconductor crystal layer 106 are formed on the base substrate 102 in a region where the first separation layer 108 and the first semiconductor crystal layer 104 are not formed. In addition, before forming the 2nd separated layer 110, you may perform the sulfur termination process which terminates the surface of the 2nd semiconductor crystal layer 106 with a sulfur atom. Further, the semiconductor crystal layer forming substrate 140 and the semiconductor crystal layer forming substrate 160 may be removed at the same time. That is, after the second separation layer 110 in both the semiconductor crystal layer formation substrate 140 and the semiconductor crystal layer formation substrate 160 is bonded to the base substrate 102, the semiconductor crystal layer formation substrate 140 and the semiconductor crystal layer formation substrate 160 are removed. Good.

  In the example shown in FIG. 4, the second separation layer 110 is formed only on the second semiconductor crystal layer 106 and the surface of the second separation layer 110 and the surface of the base substrate 102 are bonded to each other. The second separation layer 110 may also be formed over the substrate 102, and the surface of the second separation layer 110 over the second semiconductor crystal layer 106 and the surface of the second separation layer 110 over the base substrate 102 may be bonded together. . In this case, it is preferable to hydrophilize the surface to be bonded of the second separation layer 110. When the hydrophilic treatment is performed, it is preferable to heat and bond the second separation layers 110 together. Alternatively, the second separation layer 110 may be formed only on the base substrate 102 and the surface of the base substrate 102 and the surface of the second separation layer 110 on the second semiconductor crystal layer 106 may be bonded to each other.

  In the example illustrated in FIG. 4, the example in which the second semiconductor crystal layer 106 and the second separation layer 110 are bonded to the base substrate 102 and then the second semiconductor crystal layer 106 is separated from the semiconductor crystal layer formation substrate 160 has been described. After separating the second semiconductor crystal layer 106 and the second separation layer 110 from the semiconductor crystal layer formation substrate 160, the second semiconductor crystal layer 106 may be bonded to the base substrate 102. In this case, after the second semiconductor crystal layer 106 and the second separation layer 110 are separated from the semiconductor crystal layer formation substrate 160 and before being bonded to the base substrate 102, the second semiconductor crystal layer 106 and the second semiconductor crystal layer 106 and It is preferable to hold the second separation layer 110.

  Next, as shown in FIG. 6, a conductive material layer 112 is formed on the first semiconductor crystal layer 104 and the second semiconductor crystal layer 106. The conductive material layer 112 becomes the first source 124, the first drain 126, the second source 134, and the second drain 136 later. The conductive material layer 112 is formed by a thin film formation method such as a vapor deposition method, a CVD method, or a sputtering method.

  As shown in FIG. 7, the conductive material layer 112 in the region where the first gate 122 and the second gate 132 are formed is removed by etching, and the insulating layer 114 is formed. The insulating layer 114 is formed by a thin film forming method such as an ALD method, a thermal oxidation method, a vapor deposition method, a CVD method, or a sputtering method.

  As shown in FIG. 8, a conductive thin film is formed on the insulating layer 114, and the conductive thin films other than the regions to be the first gate 122 and the second gate 132 are removed, so that the first gate 122 and the second gate A gate 132 is formed. Note that the conductive material layer 112 separated by the first gate 122 or the second gate 132 becomes the first source 124, the first drain 126, the second source 134, and the second drain 136. An opening is formed in the insulating layer 114 so that the conductive material layer 112 to be the first source 124, the first drain 126, the second source 134, and the second drain 136 is exposed, and the first thin film is formed and patterned to form the first. If the gate metal 123, the first source electrode 125 and the first drain electrode 127, and the second gate metal 133, the second source electrode 135 and the second drain electrode 137 are formed, the semiconductor device 100 shown in FIG. 1 can be manufactured. . In addition, when a metal film is formed as the conductive thin film, it is preferable to perform post metal annealing treatment. The post metal annealing treatment is preferably performed by an RTA (rapid thermal annealing) method.

  According to the semiconductor device 100 and the manufacturing method thereof described above, the first source 124, the first drain 126, the second source 134, and the second drain 136 are simultaneously formed in the same process, so that the manufacturing process can be simplified. . As a result, manufacturing costs are reduced and miniaturization is facilitated. In addition, the work functions of the conductive materials constituting the first source 124, the first drain 126, the second source 134, and the second drain 136 satisfy the relationship represented by Equation 1 or Equation 2. Therefore, the contact between the first source 124 and the first drain 126 and the first semiconductor crystal layer 104 is an ohmic contact, and the contact between the second source 134 and the second drain 136 and the second semiconductor crystal layer 106 is an ohmic contact. As a result, each on-current of the first MISFET 120 and the second MISFET 130 can be increased. Further, since the resistance between each source and drain is reduced, it is not necessary to reduce the channel resistance of each MISFET, and the concentration of doping impurity atoms in the channel layer can be reduced. As a result, carrier mobility in the channel layer can be increased.

  In the semiconductor device 100 described above, since the base substrate 102 and the first separation layer 108 are in contact with each other, if the region in contact with the first separation layer 108 of the base substrate 102 is conductive, the first separation of the base substrate 102 is performed. A voltage can be applied to a region in contact with the layer 108 and the voltage can act as a back gate voltage to the first MISFET 120. In the semiconductor device 100 described above, since the base substrate 102 and the second separation layer 110 are in contact with each other, if the region of the base substrate 102 in contact with the second separation layer 110 is conductive, A voltage can be applied to a region in contact with the two isolation layers 110, and the voltage can act as a back gate voltage to the second MISFET 130. The action of these back gate voltages can increase the on-current of the first MISFET 120 and the second MISFET 130 and reduce the off-current.

  The semiconductor device 100 described above may include a plurality of first semiconductor crystal layers 104, and each of the plurality of first semiconductor crystal layers 104 may be regularly arranged in a plane parallel to the upper surface of the base substrate 102. Regular means that the same arrangement pattern is repeated, for example. The semiconductor device 100 may include a plurality of second semiconductor crystal layers 106, and each of the plurality of second semiconductor crystal layers 106 may be regularly arranged in a plane parallel to the upper surface of the base substrate 102. The semiconductor device 100 may regularly include a plurality of both the first semiconductor crystal layer 104 and the second semiconductor crystal layer 106. Thus, by regularly arranging the first semiconductor crystal layer 104 and the second semiconductor crystal layer 106, the productivity of the semiconductor substrate used for the semiconductor device 100 can be increased. The regular arrangement of the second semiconductor crystal layer 106 or the first semiconductor crystal layer 104 is such that the second semiconductor crystal layer 106 or the first semiconductor crystal layer is grown after the second semiconductor crystal layer 106 or the first semiconductor crystal layer 104 is epitaxially grown. A method of patterning 104 into a regular arrangement, a method of selectively epitaxially growing the second semiconductor crystal layer 106 or the first semiconductor crystal layer 104 in a regular arrangement in advance, or the second semiconductor crystal layer 106 or the first semiconductor crystal Either or both of the layers 104 are epitaxially grown on the semiconductor crystal layer forming substrate 160, separated from the semiconductor crystal layer forming substrate 160, shaped into a predetermined shape, and then regularly arranged on the base substrate 102. It can be implemented by any of the methods of pasting, and any of these methods can be combined. It can be carried out by the combined method.

  In the semiconductor device 100 described above, the first semiconductor crystal layer 104 and the first isolation layer 108 are formed on the semiconductor crystal layer formation substrate 140, and the first isolation layer 108 and the base substrate 102 are bonded together, and then the semiconductor crystal layer formation is performed. By removing the substrate 140, the first semiconductor crystal layer 104 and the first separation layer 108 are formed on the base substrate 102, and the second semiconductor crystal layer 106 and the second separation layer 110 are formed on the semiconductor crystal layer formation substrate 160. The second semiconductor crystal layer 106 and the second separation layer 110 are formed on the base substrate 102 by removing the semiconductor crystal layer formation substrate 160 after forming and bonding the second separation layer 110 and the base substrate 102 together. I explained that. However, when one of the first semiconductor crystal layer 104 and the second semiconductor crystal layer 106 is made of SiGe and the other is made of a group III-V compound semiconductor crystal, the semiconductor crystal layer and the separation layer made of SiGe are It can also be formed by an oxidation concentration method. Hereinafter, a case where the first semiconductor crystal layer 104 is made of SiGe will be described. That is, before forming the first semiconductor crystal layer 104, the first separation layer 108 made of an insulator is formed on the base substrate 102, and the first semiconductor crystal layer 104 starts on the first separation layer 108. A SiGe layer as a material is formed. The SiGe layer is heated in an oxidizing atmosphere to oxidize the surface. By oxidizing the SiGe layer, the concentration of Ge atoms in the SiGe layer can be increased, and the first semiconductor crystal layer 104 having a high Ge concentration can be obtained. Thereafter, the SiGe layer in the region where the second semiconductor crystal layer 106 is formed is removed by etching to form the first semiconductor crystal layer 104.

  Alternatively, when one of the first semiconductor crystal layer 104 and the second semiconductor crystal layer 106 is made of a group IV semiconductor crystal and the other is made of a group III-V compound semiconductor crystal, the semiconductor crystal made of the group IV semiconductor crystal The layer and the separation layer can be formed by a smart cut method. Hereinafter, a case where the first semiconductor crystal layer 104 is made of a group IV semiconductor crystal will be described. That is, a first separation layer 108 made of an insulator is formed on the surface of a semiconductor layer material substrate made of a group IV semiconductor crystal, and cations are implanted through the first separation layer 108 to a predetermined separation depth of the semiconductor layer material substrate. To do. The semiconductor layer material substrate and the base substrate 102 are attached to each other so that the surface of the first separation layer 108 and the surface of the base substrate 102 are bonded, and the semiconductor layer material substrate and the base substrate 102 are heated. By this heating, the cations implanted at the planned separation depth react with the group IV atoms constituting the semiconductor layer material substrate, and the group IV semiconductor crystal located at the planned separation depth is denatured. If the semiconductor layer material substrate and the base substrate 102 are separated in this state, the group IV semiconductor crystal located on the base substrate 102 side from the modified group of the group IV semiconductor crystal is separated from the semiconductor layer material substrate. By appropriately polishing the semiconductor layer material attached to the base substrate 102 side and removing the semiconductor crystal layer in the region where the second semiconductor crystal layer 106 is formed by etching, the semiconductor crystal layer remaining on the base substrate 102 is removed. One semiconductor crystal layer 104 can be formed.

  In the semiconductor device 100 described above, when any one of the first separation layer 108 and the second separation layer 110 is a semiconductor crystal having a forbidden band width larger than the forbidden band width of the semiconductor crystal layer located thereon, the separation is performed. The layer can be formed continuously up to the semiconductor crystal layer using an epitaxial growth method. Hereinafter, a case where the first separation layer 108 is made of a semiconductor crystal will be described. A first separation layer 108 is formed on the base substrate 102 by an epitaxial growth method, and a first semiconductor crystal layer 104 is formed on the first separation layer 108 by an epitaxial growth method. After the epitaxial growth, as shown in FIG. 9, using a mask 185, the first semiconductor crystal layer 104 and the first separation layer 108 in the region where the second semiconductor crystal layer 106 is formed are removed by etching. In this way, a semiconductor substrate similar to that shown in FIG. 3 can be obtained. In this method, the first separation layer 108 and the first semiconductor crystal layer 104 can be formed continuously, or the second separation layer 110 and the second semiconductor crystal layer 106 can be formed continuously by the epitaxial growth method, so that the manufacturing process is simple. become.

In the case where any pair of the first separation layer 108 and the first semiconductor crystal layer 104 or the second separation layer 110 and the second semiconductor crystal layer 106 is continuously formed by the epitaxial growth method, the first layer is formed using the selective epitaxial growth method. The separation layer 108 and the first semiconductor crystal layer 104 or the second separation layer 110 and the second semiconductor crystal layer 106 can be formed. As shown in FIG. 10, the region where the second isolation layer 110 and the second semiconductor crystal layer 106 are formed on the surface of the base substrate 102 is covered with a growth inhibition layer 187 such as SiO ₂ and epitaxial growth is performed. The first semiconductor crystal layer 104 and the first separation layer 108 are selectively epitaxially grown on the base substrate 102 in a region where the growth inhibition layer 187 does not exist. Thereafter, the growth inhibition layer 187 is removed, and a semiconductor substrate similar to that shown in FIG. 3 can be obtained.

  When the first separation layer 108 or the second separation layer 110 is an epitaxially grown crystal, the first separation layer 108 or the second separation layer 110 may be oxidized to be converted into an amorphous insulator layer. For example, when the first separation layer 108 or the second separation layer 110 is AlAs or AlInP, the first separation layer 108 or the second separation layer 110 can be made into an insulating oxide by a selective oxidation technique.

  In the bonding step in the manufacturing method of the semiconductor device 100 described above, the example in which the semiconductor crystal layer forming substrate is removed by etching has been described. However, as shown in FIG. The substrate can also be removed. That is, before forming the first semiconductor crystal layer 104 on the semiconductor crystal layer formation substrate 140, the crystalline sacrificial layer 190 is formed on the surface of the semiconductor crystal layer formation substrate 140 by an epitaxial crystal growth method. Thereafter, the first semiconductor crystal layer 104 and the first separation layer 108 are formed on the surface of the crystalline sacrificial layer 190 by an epitaxial growth method, and the surface of the first separation layer 108 and the surface of the base substrate 102 are activated by the argon beam 150. . Thereafter, the surface of the first separation layer 108 and the surface of the base substrate 102 are bonded together, and the crystalline sacrificial layer 190 is removed as shown in FIG. As a result, the first semiconductor crystal layer 104 and the first separation layer 108 on the semiconductor crystal layer formation substrate 140 are separated from the semiconductor crystal layer formation substrate 140. According to this method, the semiconductor crystal layer forming substrate can be reused, and the manufacturing cost can be reduced.

  FIG. 13 shows a cross section of the semiconductor device 200. The semiconductor device 200 does not have the first separation layer 108 in the semiconductor device 100, and the first semiconductor crystal layer 104 is disposed in contact with the base substrate 102. In addition, since it has the same structure as the semiconductor device 100 except that the first separation layer 108 is not provided, description of common members and the like is omitted.

  That is, in the semiconductor device 200, the base substrate 102 and the first semiconductor crystal layer 104 are in contact with each other at the bonding surface 103, and contain impurity atoms having p-type or n-type conductivity in the vicinity of the bonding surface 103 of the base substrate 102. In the vicinity of the bonding surface 103 of the first semiconductor crystal layer 104, impurity atoms having a conductivity type different from the conductivity type indicated by the impurity atoms contained in the base substrate 102 are contained. That is, the semiconductor device 200 has a pn junction in the vicinity of the bonding surface 103. Even in a structure without the first separation layer 108, the base substrate 102 and the first semiconductor crystal layer 104 can be electrically separated by a pn junction formed in the vicinity of the bonding surface 103. The first MISFET 120 formed in the semiconductor crystal layer 104 can be electrically isolated from the base substrate 102.

  The semiconductor device 200 can be manufactured as follows. As shown in FIG. 14, a first semiconductor crystal layer 104 is formed on the entire surface of the base substrate 102 by an epitaxial growth method. Then, the first semiconductor crystal layer 104 in the region where the second semiconductor crystal layer 106 is formed is removed by etching. The second isolation layer 110 and the second semiconductor crystal layer 106 are formed on the base substrate 102 in the region where the first semiconductor crystal layer 104 has been removed, by the same process as that described with reference to FIGS. Subsequent steps are the same as those of the semiconductor device 100. However, in the step of forming the pn junction, the base substrate 102 is formed in a step in which impurity atoms having p-type or n-type conductivity are contained in the vicinity of the surface of the base substrate 102 and the first semiconductor crystal layer 104 is formed by the epitaxial growth method. The first semiconductor crystal layer 104 can be doped with an impurity atom having a conductivity type different from that of the impurity atom contained in the first semiconductor crystal layer 104.

  In the structure in which the first semiconductor crystal layer 104 is formed directly on the base substrate 102, a pn junction as an isolation structure is not essential when the need for element isolation is low. That is, the semiconductor device 200 does not contain an impurity atom having p-type or n-type conductivity in the vicinity of the bonding surface 103 of the base substrate 102, and is p-type or in the vicinity of the bonding surface 103 of the first semiconductor crystal layer 104. A structure not containing an impurity atom exhibiting n-type conductivity may be used.

When the first semiconductor crystal layer 104 is formed directly on the base substrate 102, annealing may be performed after the epitaxial growth or during the epitaxial growth. By the annealing treatment, dislocations in the first semiconductor crystal layer 104 are reduced. In addition, the epitaxial growth method is a method in which the first semiconductor crystal layer 104 is uniformly grown on the entire surface of the base substrate 102, or the surface of the base substrate 102 is divided finely by a growth inhibition layer such as SiO ₂ and selectively. Any epitaxial growth method may be used.

(Example)
A Ge crystal layer was formed on a part of the surface of the base substrate, and an InGaAs crystal layer was formed on the other part of the surface of the base substrate, that is, on the base substrate in a region where the Ge crystal layer was not formed. A TaN layer having a thickness of 30 nm was deposited on the InGaAs crystal layer and the Ge crystal layer, and the TaN layer was patterned. By the patterning, a source and a drain were formed on each of the InGaAs crystal layer and the Ge crystal layer. An Al ₂ O ₃ / TaN laminated film was deposited in the order of Al ₂ O ₃ and TaN so as to fill the trench between the source and the drain, and the deposited layer was patterned to form a gate insulating film and a gate. Four types of devices having a source-drain groove width, that is, a gate length of 50 nm, 75 nm, 100 nm, and 100 μm were formed. As described above, the nMOSFET was formed on the InGaAs crystal layer, the pMOSFET was formed on the Ge crystal layer, and the source and drain were simultaneously formed. FIG. 15 is a SEM photograph of the nMOSFET observed from above. A gate electrode is formed so as to overlap a gap (groove between source and drain) indicated by Lg. FIG. 16 is a TEM photograph observing a cross section of the gate portion of the nMOSFET. Even when the gate length Lg is 50 nm, it can be confirmed that the trench between the source and the drain is securely buried.

The source / drain made of TaN formed as described above has a work function of about 4.6 eV. On the other hand, the electron affinity of InGaAs is 4.5 eV, the electron affinity of Ge is 4.0 eV, and the band gap of Ge is 0.67 eV. Thus, the source / drain work function Φ _M is the sum of the electron affinity φ _{1 of} InGaAs, which is an nMOSFET material, and the sum of electron affinity and band gap of Ge, which is a pMOSFET material, φ ₂ + E _g2 , φ ₁ <Φ _M <φ The relationship of ₂ + E _g2 is satisfied. The difference | Φ _M −φ ₁ | between the work function Φ _M of the source / drain and the electron affinity φ _{1 of} InGaAs is 0.1 eV or less, and the work function Φ _M of the source / drain and the electron affinity of Ge and The sum of the band gap φ ₂ + E _g2 and the difference | (φ ₂ + E _g2 ) −Φ _M | are also 0.1 eV or less. For this reason, the barrier between TaN and InGaAs when conducting n-type conduction is small, and the barrier between TaN and Ge when conducting p-type conduction is also small. That is, the contact resistance of the source / drain can be reduced by adopting TaN using the source / drain of the nMOSFET on the InGaAs crystal layer and the pMOSFET on the Ge crystal layer as a common electrode material.

  17 and 18 are graphs showing gate voltage versus source current characteristics in the pMOSFET and nMOSFET included in the device of Example 1. FIG. 17 shows a case where the gate length Lg is 100 μm, and FIG. The case of 100 nm is shown. Each figure shows two types of data when the drain voltage Vd is 1V and when it is 50 mV. When Lg was 100 μm, a 4-digit on / off ratio was observed in the pMOSFET on the Ge crystal layer, and a 6-digit on / off ratio was observed in the nMOSFE on the InGaAs crystal layer.

  FIG. 19 is a graph showing the gate voltage vs. source current characteristics, and shows the data for the nMOSFE on the InGaAs crystal layer when the gate length Lg is made smaller than that shown in FIG. Although the off-current increases due to the short channel effect and the subthreshold characteristic (SS value) deteriorates, the switching characteristic is observed even when the gate length is 50 nm.

  FIG. 20 is a graph showing an SS value with respect to the gate length, and FIG. 21 is a graph showing a DIBL (drain-induced barrier lowering) value with respect to the gate length. Good values of SS = 200 mV / dec and DIBL = 150 mV / V were obtained when the gate length was 100 nm.

  The order of execution of each process such as operations, procedures, steps, and stages in the apparatus, system, program, and method shown in the claims, the description, and the drawings is particularly “before” or “prior to”. It should be noted that the output can be realized in any order unless the output of the previous process is used in the subsequent process. Regarding the operation flow in the claims, the description, and the drawings, even if it is described using “first”, “next”, etc. for convenience, it means that it is essential to carry out in this order. It is not a thing. In addition, the first layer being “above” the second layer means that the first layer is provided in contact with the upper surface of the second layer, and the case between the lower surface of the first layer and the upper surface of the second layer. Including a case where a layer of In addition, phrases indicating directions such as “up” and “down” indicate relative directions in the semiconductor substrate and the semiconductor device, and do not indicate absolute directions with respect to an external reference plane such as the ground.

100 Semiconductor Device, 102 Base Substrate, 103 Bonding Surface, 104 First Semiconductor Crystal Layer, 104a Part of First Semiconductor Crystal Layer, 106 Second Semiconductor Crystal Layer, 106a Part of Second Semiconductor Crystal Layer, 108 First Separation 110, second isolation layer, 112 conductive material layer, 114 insulating layer, 114a part of insulating layer, 120 first MISFET, 122 first gate, 123 first gate metal, 124 first source, 125 first source electrode 126 First drain electrode, 127 First drain electrode, 130 Second MISFET, 132 Second gate, 133 Second gate metal, 134 Second source, 135 Second source electrode, 136 Second drain, 137 Second drain electrode, 140 Semiconductor crystal layer forming substrate, 150 argon beam, 160 semiconductor crystal layer type Substrate, 185 mask, 187 growth inhibition layer, 190 crystalline sacrificial layer, 200 semiconductor device

Claims (26)

A base substrate;
A first semiconductor crystal layer located above a portion of the surface of the base substrate;
A second semiconductor crystal layer positioned above another part different from the part of the surface of the base substrate;
A first MISFET having a part of the first semiconductor crystal layer as a channel and having a first source and a first drain;
A second MISFET having a part of the second semiconductor crystal layer as a channel and a second source and a second drain;
The first MISFET is a first channel type MISFET, and the second MISFET is a second channel type MISFET different from the first channel type,
The first source, the first drain, the second source, and the second drain are made of the same conductive material,
Semiconductor devices work function [Phi _M of the conductive material, which satisfies at least one relationship of equations 1 and 2.
(Expression 1) φ ₁ <Φ _M <φ ₂ + E _g2
(Equation 2) | Φ _M −φ ₁ | ≦ 0.1 eV and | (φ ₂ + E _g2 ) −Φ _M | ≦ 0.1 eV
(Where φ ₁ is the electron affinity of crystals constituting part of the semiconductor crystal layer that functions as an N-type channel of the first semiconductor crystal layer and the second semiconductor crystal layer, φ ₂ and E _g2 Indicates the electron affinity and the forbidden band width of the crystal that constitutes the semiconductor crystal layer of which part of the first semiconductor crystal layer and the second semiconductor crystal layer functions as a P-type channel. A first separation layer located between the base substrate and the first semiconductor crystal layer and electrically separating the base substrate and the first semiconductor crystal layer;
A second separation layer located between the base substrate and the second semiconductor crystal layer and electrically separating the base substrate and the second semiconductor crystal layer;
The semiconductor device according to claim 1, further comprising: The base substrate and the first semiconductor crystal layer are in contact with each other at a bonding surface;
Containing impurity atoms exhibiting a p-type or n-type conductivity in the region of the base substrate in the vicinity of the bonding surface;
In the region of the first semiconductor crystal layer in the vicinity of the bonding surface, containing impurity atoms having a conductivity type different from the conductivity type indicated by the impurity atoms contained in the base substrate,
The semiconductor device according to claim 1, further comprising a first separation layer that is located between the base substrate and the second semiconductor crystal layer and electrically separates the base substrate and the second semiconductor crystal layer. The base substrate is in contact with the first separation layer;
A region in contact with the first separation layer of the base substrate is conductive,
The semiconductor device according to claim 2, wherein a voltage applied to a region of the base substrate in contact with the first isolation layer acts as a back gate voltage to the first MISFET. The base substrate is in contact with the second separation layer;
A region in contact with the second separation layer of the base substrate is conductive,
The semiconductor device according to claim 2, wherein a voltage applied to a region in contact with the second isolation layer of the base substrate acts as a back gate voltage to the second MISFET. The first semiconductor crystal layer is made of a group IV semiconductor crystal, and the first MISFET is a P-channel MISFET;
6. The semiconductor device according to claim 1, wherein the second semiconductor crystal layer is made of a group III-V compound semiconductor crystal, and the second MISFET is an N-channel MISFET. The first semiconductor crystal layer is made of a III-V compound semiconductor crystal, and the first MISFET is an N-channel MISFET;
The semiconductor device according to any one of claims 1 to 5, wherein the second semiconductor crystal layer is made of a group IV semiconductor crystal, and the second MISFET is a P-channel MISFET. The semiconductor device according to any one of claims 1 to 7, wherein the conductive substance is TiN, TaN, graphene, HfN, or WN. A semiconductor substrate used for the semiconductor device according to any one of claims 1 to 8,
The base substrate;
A first semiconductor crystal layer located above a portion of the surface of the base substrate;
A second semiconductor crystal layer positioned above another part different from the part of the surface of the base substrate;
A semiconductor substrate. A separation layer located between the base substrate and the first semiconductor crystal layer or the second semiconductor crystal layer and electrically separating the base substrate and the first semiconductor crystal layer or the second semiconductor crystal layer The semiconductor substrate according to claim 9, further comprising: The semiconductor substrate according to claim 10, wherein the separation layer is made of an amorphous insulator. The semiconductor substrate according to claim 10, wherein the isolation layer is made of a semiconductor crystal having a forbidden band width larger than a forbidden band width of a semiconductor crystal constituting the semiconductor crystal layer positioned on the isolation layer. One semiconductor crystal layer selected from the first semiconductor crystal layer and the second semiconductor crystal layer and the base substrate are in contact with each other at a bonding surface;
Containing impurity atoms exhibiting a p-type or n-type conductivity in the region of the base substrate in the vicinity of the bonding surface;
The region of the semiconductor crystal layer in the vicinity of the bonding surface contains impurity atoms having a conductivity type different from the conductivity type indicated by the impurity atoms contained in the base substrate. The semiconductor substrate according to item. A plurality of the first semiconductor crystal layers;
A plurality of the second semiconductor crystal layers;
Each of the plurality of first semiconductor crystal layers is regularly arranged in a plane parallel to the upper surface of the base substrate,
14. The semiconductor substrate according to claim 9, wherein each of the plurality of second semiconductor crystal layers is regularly arranged in a plane parallel to an upper surface of the base substrate. A method for manufacturing a semiconductor substrate according to any one of claims 8 to 13,
A first semiconductor crystal layer forming step of forming the first semiconductor crystal layer above a part of the surface of the base substrate;
A second semiconductor crystal layer forming step of forming the second semiconductor crystal layer above the other part different from the part of the surface of the base substrate,
The second semiconductor crystal layer forming step includes:
An epitaxial growth step of forming the second semiconductor crystal layer on the semiconductor crystal layer forming substrate by an epitaxial crystal growth method;
The base substrate and the second semiconductor crystal layer are electrically separated on the base substrate, the second semiconductor crystal layer, or both the base substrate and the second semiconductor crystal layer. Forming a second separation layer;
So that the second separation layer on the base substrate and the second semiconductor crystal layer are joined, so that the second separation layer on the second semiconductor crystal layer and the base substrate are joined, or A bonding step of bonding the base substrate and the semiconductor crystal layer forming substrate so that the second separation layer on the base substrate and the second separation layer on the second semiconductor crystal layer are bonded together; ,
The manufacturing method of the semiconductor substrate which has this. The first semiconductor crystal layer forming step includes:
An epitaxial growth step of forming the first semiconductor crystal layer on the semiconductor crystal layer forming substrate by an epitaxial crystal growth method;
The base substrate and the first semiconductor crystal layer are electrically separated on the base substrate, the first semiconductor crystal layer, or both the base substrate and the first semiconductor crystal layer. Forming a first separation layer;
The first separation layer on the first semiconductor crystal layer and the base substrate are joined such that the first separation layer and the first semiconductor crystal layer on the base substrate are joined; or A bonding step of bonding the base substrate and the semiconductor crystal layer forming substrate so that the first separation layer on the base substrate and the first separation layer on the first semiconductor crystal layer are bonded together; ,
The method for manufacturing a semiconductor substrate according to claim 15, comprising: The first semiconductor crystal layer is made of SiGe, the second semiconductor crystal layer is made of a group III-V compound semiconductor crystal,
Forming a first separation layer made of an insulator on the base substrate before the first semiconductor crystal layer forming step;
The first semiconductor crystal layer forming step includes:
Forming a SiGe layer as a starting material of the first semiconductor crystal layer on the first separation layer;
Increasing the concentration of Ge atoms in the SiGe layer by heating the SiGe layer in an oxidizing atmosphere and oxidizing the surface;
Etching the SiGe layer above the other portion of the base substrate surface;
The method for manufacturing a semiconductor substrate according to claim 15, comprising: The first semiconductor crystal layer is made of a group IV semiconductor crystal, the second semiconductor crystal layer is made of a group III-V compound semiconductor crystal,
Forming a first separation layer made of an insulator on a surface of a semiconductor layer material substrate made of a group IV semiconductor crystal;
Injecting cations through the first separation layer to a predetermined separation depth of the semiconductor layer material substrate;
Bonding the semiconductor layer material substrate and the base substrate so that the surface of the first separation layer and the surface of the base substrate are bonded;
By heating the semiconductor layer material substrate and the base substrate and reacting the cations implanted to the planned separation depth with the group IV atoms constituting the semiconductor layer material substrate, the semiconductor layer material substrate is positioned at the planned separation depth. Modifying the group IV semiconductor crystal;
By separating the semiconductor layer material substrate and the base substrate, the group IV semiconductor crystal located on the base substrate side from the modified portion of the group IV semiconductor crystal modified in the modification step is converted into the semiconductor layer. Peeling from the material substrate;
Etching a region located above the other part of the surface of the base substrate in the semiconductor crystal layer made of the group IV semiconductor crystal remaining on the base substrate;
The method for manufacturing a semiconductor substrate according to claim 15, comprising: A first separation layer made of a semiconductor crystal having a forbidden band width larger than the forbidden band width of the semiconductor crystal constituting the first semiconductor crystal layer is selected only above the part of the surface of the base substrate by a selective epitaxial growth method. Further comprising the step of forming
The method of manufacturing a semiconductor substrate according to claim 15, wherein the first semiconductor crystal layer forming step is a step of selectively forming the first semiconductor crystal layer only on the first isolation layer by a selective epitaxial growth method. . Forming a first separation layer made of a semiconductor crystal having a forbidden band width larger than the forbidden band width of the semiconductor crystal constituting the first semiconductor crystal layer by an epitaxial growth method above the surface of the base substrate;
The first semiconductor crystal layer forming step includes:
Forming the first semiconductor crystal layer on the first separation layer by an epitaxial growth method;
Etching the first semiconductor crystal layer and the first separation layer above the other portion of the surface of the base substrate.
The method for manufacturing a semiconductor substrate according to claim 15. The semiconductor substrate according to claim 15, wherein the first semiconductor crystal layer forming step is a step of selectively forming the first semiconductor crystal layer only above the part of the surface of the base substrate by a selective epitaxial growth method. Manufacturing method. The first semiconductor crystal layer forming step includes:
Forming the first semiconductor crystal layer above the surface of the base substrate by an epitaxial growth method;
Etching the first semiconductor crystal layer above the other portion of the surface of the base substrate.
The method for manufacturing a semiconductor substrate according to claim 15. In the vicinity of the surface of the base substrate, containing impurity atoms exhibiting p-type or n-type conductivity,
The step of forming the first semiconductor crystal layer by an epitaxial growth method, the first semiconductor crystal layer is doped with an impurity atom having a conductivity type different from that of the impurity atom contained in the base substrate. The method for manufacturing a semiconductor substrate according to claim 22. Forming a crystalline sacrificial layer on the surface of the semiconductor crystal layer formation substrate by an epitaxial crystal growth method before forming a semiconductor crystal layer on the semiconductor crystal layer formation substrate;
After bonding the base substrate and the semiconductor crystal layer forming substrate, the crystalline sacrificial layer is removed, whereby the semiconductor crystal layer formed on the semiconductor crystal layer forming substrate by the epitaxial crystal growth method and the semiconductor Separating the crystal layer forming substrate;
The method for manufacturing a semiconductor substrate according to claim 15, further comprising: Either epitaxially growing the first semiconductor crystal layer and then patterning the first semiconductor crystal layer in a regular arrangement, or selectively epitaxially growing the first semiconductor crystal layer in a regular arrangement in advance And some steps
Either the step of epitaxially growing the second semiconductor crystal layer and then patterning the second semiconductor crystal layer in a regular arrangement, or the step of selectively epitaxially growing the second semiconductor crystal layer in a regular arrangement in advance. The method of manufacturing a semiconductor substrate according to any one of claims 15 to 24. A step of manufacturing a semiconductor substrate having the first semiconductor crystal layer and the second semiconductor crystal layer using the method for manufacturing a semiconductor substrate according to any one of claims 15 to 25;
Forming a conductive material having a work function Φ _M satisfying at least one of Equations 1 and 2 on each of the first semiconductor crystal layer and the second semiconductor crystal layer;
Removing the conductive material in a region where a gate electrode is formed;
Forming a gate insulating layer and a gate electrode in the region from which the conductive material has been removed;
The conductive material is patterned and heated to form a first source and a first drain on both sides of the gate electrode on the first semiconductor crystal, and a second on both sides of the gate electrode on the second semiconductor crystal. Forming a source and a second drain;
A method of manufacturing a semiconductor device having
(Expression 1) φ ₁ <Φ _M <φ ₂ + E _g2
(Equation 2) | Φ _M −φ ₁ | ≦ 0.1 eV and | (φ ₂ + E _g2 ) −Φ _M | ≦ 0.1 eV
(Where φ ₁ is the electron affinity of crystals constituting part of the semiconductor crystal layer that functions as an N-type channel of the first semiconductor crystal layer and the second semiconductor crystal layer, φ ₂ and E _g2 Indicates the electron affinity and the forbidden band width of the crystal that constitutes the semiconductor crystal layer of which part of the first semiconductor crystal layer and the second semiconductor crystal layer functions as a P-type channel.