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Publication number
JP2010199596A5
JP2010199596A5 JP2010086450A JP2010086450A JP2010199596A5 JP 2010199596 A5 JP2010199596 A5 JP 2010199596A5 JP 2010086450 A JP2010086450 A JP 2010086450A JP 2010086450 A JP2010086450 A JP 2010086450A JP 2010199596 A5 JP2010199596 A5 JP 2010199596A5
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JP
Japan
Prior art keywords
plasma
coating
component
cleaning
exposed surface
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JP2010086450A
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JP5371871B2 (ja
JP2010199596A (ja
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Priority claimed from US09/749,917 external-priority patent/US6805952B2/en
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Publication of JP2010199596A publication Critical patent/JP2010199596A/ja
Publication of JP2010199596A5 publication Critical patent/JP2010199596A5/ja
Application granted granted Critical
Publication of JP5371871B2 publication Critical patent/JP5371871B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Claims (11)

  1. 使用中にプラズマに露出した1つ又は複数の面を有するプラズマ反応室の構成部品を製造する方法であって、
    前記構成部品のプラズマ露出面上に被覆材料をプラズマ溶射して、プラズマエッチング中に形成されるポリマー堆積物の付着を促進する溶射表面粗さ特性を有する被膜を形成する工程を含み、
    前記被膜材料は、ジルコニア、炭化シリコン、窒化シリコン、炭化ホウ素及び窒化ホウ素から選択されるセラミック材料、又は、ポリマー材料であることを特徴とする方法。
  2. 前記構成部品の前記プラズマ露出面を粗くする工程と、
    前記被覆材料をプラズマ溶射する前に、前記粗くされた面を洗浄する工程と、
    を更に含むことを特徴とする請求項1に記載の方法。
  3. 前記プラズマ溶射された被膜の露出面を洗浄する工程を更に含むことを特徴とする請求項1に記載の方法。
  4. 前記構成部品をプラズマ反応チャンバから取り除く工程と、
    前記構成部品から現存する被膜及び付着したポリマー堆積物の少なくともいずれかを取り除くことによって前記構成部品のプラズマ露出面を洗浄する工程であって、この洗浄された面上に前記被膜をプラズマ溶射するより前に行われる洗浄工程と、
    を更に含むことを特徴とする請求項1に記載の方法。
  5. 前記プラズマ溶射された被膜は、50.5〜127μmの厚さを有するセラミック材料であることを特徴とする請求項1に記載の方法。
  6. 前記構成部品及び前記被膜材料は、同じセラミック材料で構成されることを特徴とする請求項1に記載の方法。
  7. 前記被膜材料は、ポリイミドであることを特徴とする請求項1に記載の方法。
  8. 前記被膜は、254〜762μmの厚さを有することを特徴とする請求項7に記載の方法。
  9. 前記構成部品は、プラズマ閉じ込めリング、フォーカスリング、ペデスタル、チャンバ壁、チャンバライナ及びガス供給板で構成されるグループから選択されることを特徴とする請求項1に記載の方法。
  10. 前記粗くする工程は、前記構成部品の前記面にビードブラストする工程を含むことを特徴とする請求項2に記載の方法。
  11. 前記被膜は、表面粗さ値(Ra)の相加平均が3.81〜4.83μmの間にあることを特徴とする請求項1に記載の方法。
JP2010086450A 2000-12-29 2010-04-02 低汚染プラズマ反応室の構成部品の製造方法 Expired - Lifetime JP5371871B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/749,917 US6805952B2 (en) 2000-12-29 2000-12-29 Low contamination plasma chamber components and methods for making the same
US09/749,917 2000-12-29

Related Parent Applications (1)

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JP2002558556A Division JP4890734B2 (ja) 2000-12-29 2001-12-13 低汚染プラズマチャンバ構成部品とその製造方法

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JP2010199596A JP2010199596A (ja) 2010-09-09
JP2010199596A5 true JP2010199596A5 (ja) 2011-12-15
JP5371871B2 JP5371871B2 (ja) 2013-12-18

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JP2002558556A Expired - Lifetime JP4890734B2 (ja) 2000-12-29 2001-12-13 低汚染プラズマチャンバ構成部品とその製造方法
JP2010086450A Expired - Lifetime JP5371871B2 (ja) 2000-12-29 2010-04-02 低汚染プラズマ反応室の構成部品の製造方法
JP2011239447A Expired - Lifetime JP5166591B2 (ja) 2000-12-29 2011-10-31 プラズマエッチング反応器の構成部品、プラズマエッチング反応器及び半導体基板を処理する方法
JP2012181167A Expired - Fee Related JP5593490B2 (ja) 2000-12-29 2012-08-17 プラズマエッチング反応器及びその構成部品並びに半導体基板を処理する方法

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JP2011239447A Expired - Lifetime JP5166591B2 (ja) 2000-12-29 2011-10-31 プラズマエッチング反応器の構成部品、プラズマエッチング反応器及び半導体基板を処理する方法
JP2012181167A Expired - Fee Related JP5593490B2 (ja) 2000-12-29 2012-08-17 プラズマエッチング反応器及びその構成部品並びに半導体基板を処理する方法

Country Status (9)

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US (2) US6805952B2 (ja)
EP (1) EP1346076B1 (ja)
JP (4) JP4890734B2 (ja)
KR (2) KR100939464B1 (ja)
CN (1) CN1285758C (ja)
AU (1) AU2002245088A1 (ja)
IL (1) IL156644A0 (ja)
TW (1) TW563200B (ja)
WO (1) WO2002057506A2 (ja)

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