JP2008225443A - Transflective type liquid crystal display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a transflective type liquid crystal display (LCD) device such that a reflective part and a transmitting part have the same cell gap through reduction effect on a driving voltage by forming open patterns for inducing a fringe field in the reflective part of a pixel electrode or common electrode. <P>SOLUTION: The transflective type LCD device including a unit pixel region divided into reflective and transmitting parts includes first and second substrates facing each other, a pixel electrode formed in the pixel region of the first substrate, a reflective sheet formed in the reflective part of the first substrate, a common electrode formed on the second substrate, at least one first open pattern for forming multi-domains, and the first open pattern in at least one of the pixel and common electrodes, and a plurality of second open patterns for inducing a fringe field, and the plurality of second open patterns formed in the reflective part of at least one of the pixel and common electrodes. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a liquid crystal display device, and more particularly, to an anti-transmissive liquid crystal display device that can solve the problems caused by a dual gap.

  In general, the driving principle of a liquid crystal display device is based on the optical anisotropy and polarization properties of the liquid crystal. The alignment of molecules is directional due to the structure of thin and long liquid crystal molecules, and the direction of the molecular alignment can be controlled by artificially applying an electric field to such liquid crystals.

  Accordingly, when the molecular arrangement direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal is changed, and light is refracted in the molecular arrangement direction of the liquid crystal due to optical anisotropy, and image information can be expressed.

  Such a liquid crystal display device includes a thin film transistor (TFT) array substrate on which thin film transistors and pixel electrodes are arranged, a color filter (C / F) array substrate on which color filter (C / F) layers are arranged, and both of these. And a liquid crystal layer formed between the substrates.

  2. Description of the Related Art Currently, an active matrix liquid crystal display device (hereinafter referred to as “liquid crystal display device”) in which thin film transistors and pixel electrodes connected to the thin film transistors are arranged in a matrix manner has high resolution and dynamic image realization capability. It is attracting the most attention.

  Since this liquid crystal display device is not a self-luminous display device, an image has been displayed using a separate backlight light source. However, since the amount of light actually seen from the liquid crystal display device reaches only about 7% of the light generated by the backlight, the brightness of the backlight must be increased in a high-brightness liquid crystal display device. In other words, power consumption by the backlight is increased. Therefore, in order to supply sufficient backlight power, the capacity of the power supply device has to be increased, and a heavy battery has been used, but this also has a limited use time.

  In an environment where the surroundings are bright due to natural light or the like, it is difficult to recognize the image displayed on the liquid crystal display device.

  Therefore, recently, a transflective liquid crystal display device that can use natural light or artificial light and backlight light depending on the use environment has been researched / developed.

  In this anti-transmissive liquid crystal display device, a reflection part and a transmission part coexist in a unit pixel, and an image is displayed by a reflection part when using natural light or artificial light, and a transmission part is used when using backlight light. The image was displayed.

  In such an anti-transmissive liquid crystal display device, natural light or artificial light passes through the liquid crystal layer after being reflected through the liquid crystal layer and then passes again through the liquid crystal layer. Light passes through the liquid crystal layer once. Accordingly, when the same voltage is applied to the reflective part and the transmissive part, an image cannot be displayed. Therefore, a dual cell cap structure in which the cell gap between the reflective part and the transmissive part is different must be used.

  That is, in the TN (twist nematic) mode anti-transmission type liquid crystal display device, only the protective film of the reflective portion is maintained, and the protective film of the transmissive portion is removed, so that the cell gap (CG1) of the reflective portion can be reduced. It is set to 1/2 of the gap (CG2).

  Further, in a VA (Vertical Alignment) mode anti-transmissive liquid crystal display device in which a slit pattern (slit pattern) is formed on a pixel electrode or a common electrode to form a multi-domain, an overcoat is formed on the C / F array substrate of the reflective portion. Layers were formed to form a dual cell cap structure.

  Hereinafter, a conventional VA mode anti-transmissive liquid crystal display device will be described with reference to the accompanying drawings.

  FIG. 1 is a cross-sectional view illustrating a conventional VA mode anti-transmissive liquid crystal display device.

  As shown in FIG. 1, in the conventional VA mode anti-transmissive liquid crystal display device, the unit cell is divided into a reflective part and a transmissive part, and the cell gap of the reflective part and the cell gap of the transmissive part are different from each other. Has a cell cap structure.

  That is, the first and second substrates 10 and 30 are spaced apart from each other, and the liquid crystal layer 50 is interposed between the first and second substrates 10 and 30. Of course, a backlight unit (not shown) for providing backlight light is installed below the first substrate 10.

  The first substrate 10 includes gate lines and data lines (not shown) arranged in directions orthogonal to each other to define a pixel region, and thin film transistors (see FIG. (Not shown), a protective film (not shown) formed on a thin film transistor (not shown), and a reflecting plate 11 which is formed only on the protective film of the reflecting portion and reflects external light (natural light or artificial light). And an insulating film 12 formed on the entire surface of the substrate on which the reflecting plate 11 is formed, and a pixel electrode 13 of a transparent electrode connected to the drain electrode of the thin film transistor and formed on the insulating film 12.

  The pixel electrode 13 is formed with a slit pattern 13a for making the unit pixel a multi-domain.

  The second substrate 30 has an R, G, B color filter layer 32 for reproducing colors, a common electrode 34 formed on the R, G, B color filter layer 32, and a common reflector. An overcoat layer 36 formed on the electrode 34.

  Therefore, in the reflection portion, external light passes through the liquid crystal layer 50 from the second substrate 30 side and is reflected again by the reflection plate 11, so that it passes through the liquid crystal layer 50 twice, and in the transmission portion, the backlight light is reflected in the liquid crystal layer 50. However, the thickness of the overcoat layer 36 formed on the common electrode 34 in the reflective portion is set to be different from the cell gap g1 in the reflective portion and the cell gap g2 in the transmissive portion. By adjusting, the voltage characteristics of the reflection part and the transmission part can be matched.

  However, the conventional VA mode anti-transmissive liquid crystal display device has the following problems.

  First, after deposition of the overcoat layer, patterning must be performed so that the overcoat layer remains only in the reflective portion, which adds a process.

  Secondly, when the alignment film is deposited on the entire surface of the substrate including the overcoat layer and the rubbing process is performed, a step is formed between the reflection part and the transmission part by the overcoat layer, which may cause a defect in the rubbing process. there were.

  The present invention is to solve the above-described problems, and an object thereof is to form an open pattern for inducing a fringe field on a pixel electrode or a common electrode of a reflection portion, and to use an effect of reducing a driving voltage. An object of the present invention is to provide an anti-transmissive liquid crystal display device having a single cell gap structure in which a reflective portion and a transmissive portion have the same cell gap.

  In order to achieve the above object, a transflective liquid crystal display device according to the present invention is a transflective liquid crystal display device in which a unit pixel region is divided into a reflective portion and a transmissive portion, and is a first substrate facing each other And a second substrate, a pixel electrode formed in a pixel region on the first substrate, a reflecting plate formed in a reflecting portion on the first substrate, and a common electrode formed on the second substrate At least one first open pattern formed on at least one of the pixel electrode and the common electrode to form a multi-domain, and at least one of the pixel electrode and the common electrode to induce a fringe field. And a plurality of second open patterns formed on one reflecting portion.

  The anti-transmissive liquid crystal display device according to the present invention has the following effects.

  First, it is possible to make the reflecting portion have an operation characteristic of Δnd = λ / 4 without forming an overcoat layer on the reflecting portion, and therefore, the process can be shortened.

  Second, since the overcoat layer is omitted and a single cell gap is formed, a step difference does not occur and alignment defects can be significantly reduced. As a result, improvement in yield and reduction in unit price can be realized.

  Hereinafter, an anti-transmissive liquid crystal display device according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

First Embodiment FIG. 2 is a cross-sectional view showing a VA mode anti-transmissive liquid crystal display device according to a first embodiment of the present invention, and FIG. 3A is a common reflector of the anti-transmissive liquid crystal display device of FIG. FIG. 3B is a plan view showing a pixel electrode of a reflection portion of the anti-transmissive liquid crystal display device of FIG. 2, and FIG. 3C is a diagram of the common electrode of FIG. 3A and the pixel electrode of FIG. 3B. It is a top view which shows the state which joined.

  As shown in FIG. 2, the anti-transmissive liquid crystal display device according to the first embodiment of the present invention includes a first substrate 100 and a second substrate 110 which are spaced apart from each other with a liquid crystal layer 150 interposed therebetween. Each pixel region has a structure divided into a reflective portion and a transmissive portion, and a backlight unit (not shown) for providing backlight light is installed below the first substrate 100.

  On the first substrate 100 as the TFT array substrate, a plurality of gates and data lines (not shown) are arranged to cross each other to define a pixel region. A plurality of thin film transistors (not shown) are formed at the intersections.

  Each thin film transistor includes a gate electrode protruding from the gate line, a gate insulating layer covering the gate electrode, a semiconductor layer formed on the gate insulating film on the gate electrode, and both sides of the semiconductor layer. Source electrode and drain electrode. Here, the source electrode protrudes from the data line.

  A protective film (not shown) is formed on the entire surface of the substrate on which such a thin film transistor is formed, a reflective plate 101 that reflects external light is formed on the protective film of the reflective portion, and the entire surface of the substrate on which the reflective plate 101 is formed. Then, the insulating film 102 is formed.

  A pixel electrode 104 connected to the drain electrode of the thin film transistor is formed in each pixel region on the insulating film 102 of the first substrate 100. Here, the pixel electrode 104 is formed with a first open pattern 115a such as a slit or a hole for dividing the unit pixel into multi-domains.

  Of course, the reflective plate 101 can be electrically connected to the drain electrode of the thin film transistor, and the pixel electrode 104 can be electrically connected to the reflective plate 101.

  On the second substrate 110, which is a color filter array substrate, a black matrix layer (not shown) is formed so as to correspond to a region other than the pixel region, and R for reproducing colors corresponding to the pixel region, The G and B color filter layers 112 are formed, and the common electrode 114 is formed on the R, G, and B color filter layers 112.

  Here, a second open pattern such as a slit or a hole for inducing a fringe field in the common electrode 114 of the reflective portion to reduce the driving voltage by reducing the effective electric field. A plurality of 115b are formed.

  As described above, since the plurality of second open patterns 115b are formed on the common electrode 114 of the reflective portion, even when the same voltage is applied to the reflective portion and the transmissive portion, the birefringence (Δneff) is made different. A single gap anti-transmissive liquid crystal display device can be implemented.

  Here, the second open pattern 115b formed on the common electrode 114 of the reflective portion is formed at a higher density than the first open pattern 115a, and the width of the second open pattern 115b formed on the common electrode 114 of the reflective portion. b is formed narrower than the width a of the first open pattern 115a for forming the domain. If the width a of the first open pattern 115a is 6 to 10 μm, the width b of the second open pattern 115b is designed to be about 1 to 5 μm.

  Therefore, a multi-domain is not formed depending on the second open pattern 115b, and an effective electric field is reduced due to a fringe field, so that the transmission part has an operating characteristic of Δnd = λ / 2, and the reflection part is Δnd. = Λ / 4.

  4A and 4B are equipotential line graphs simulated in the reflection part and the transmission part of the anti-transmission type liquid crystal display device according to the first embodiment of the present invention. FIG. 5 is an anti-transmission type liquid crystal according to the present invention. It is the graph which compared the drive voltage B of the display apparatus with the drive voltage B 'of the anti-transmissive liquid crystal display apparatus by a prior art.

  As shown in FIGS. 4A and 4B, it appears that the transmissive portion appears in the same manner as the existing structure, and the fringe field occurs in the shape of the equipotential line in the reflective portion, thereby reducing the effective electric field. Therefore, it can be seen that the tilt of the liquid crystal molecules in the transmissive part is larger at the same voltage of 5V.

  Therefore, as shown in FIG. 5, the driving voltage B of the anti-transmissive liquid crystal display device provided with the common electrode 114 having the second open pattern 115b and the common electrode having no conventional open pattern are provided. When compared with the driving voltage B ′ of the anti-transmission type liquid crystal display device, the driving voltage B of the anti-transmission type liquid crystal display device in which the second open pattern 115b is formed on the common electrode 114 of the reflection portion is It can be seen that this increases compared with the driving voltage B ′ of the anti-transmissive liquid crystal display device.

  In this simulation, the width of the second open pattern 115b is set to 5 μm or less. However, by changing the width and density of the second open pattern 115b or applying both the upper and lower plates, a curve similar to the VT curve of the transmission part can be obtained. It is considered possible.

Second Embodiment FIG. 6 is a structural sectional view of a VA mode anti-transmissive liquid crystal display device according to a second embodiment of the present invention.

  As shown in FIG. 6, the anti-transmissive liquid crystal display device according to the second embodiment of the present invention includes a first open pattern 115 a such as a slit or a hole for dividing a unit pixel into multi-domains, in addition to the pixel electrode 104. In addition, the configuration is the same as that of the first embodiment except that the common electrode 114 is also formed. That is, a VA mode anti-transmissive liquid crystal display device in which the first open pattern 115a is formed on the common electrode 114 between the first open patterns 115a formed on the pixel electrode 104 is also applicable. Similar to the first embodiment of the present invention, the second open pattern 115b is formed on the common electrode 114 of the remaining reflective portion.

Third Embodiment FIG. 7 is a structural sectional view of a VA mode anti-transmissive liquid crystal display device according to a third embodiment of the present invention.

  As shown in FIG. 7, the anti-transmissive liquid crystal display device according to the third embodiment of the present invention has a protrusion 116 formed on the common electrode in order to divide the unit pixel into multi-domains in the first embodiment of the present invention. This is a VA mode anti-transmissive liquid crystal display device. Similar to the first embodiment of the present invention, the second open pattern 115b is formed on the common electrode 114 of the remaining reflective portion.

Fourth Embodiment In the first embodiment of the present invention, the second open pattern is formed on the common electrode of the reflective portion, but the same effect can be obtained even if the second open pattern is formed on the reflective portion of the pixel electrode. It is done.

  In the anti-transmissive liquid crystal display device according to the third embodiment of the present invention, as described above, the second open pattern is formed in the reflective portion of the common electrode.

  FIG. 8 is a cross-sectional view illustrating a VA mode anti-transmissive liquid crystal display device according to a fourth embodiment of the present invention. FIG. 9A is a plan view illustrating a pixel electrode of a transmissive portion of the anti-transmissive liquid crystal display device of FIG. FIG. 9B is a plan view showing a pixel electrode of a reflection portion of the anti-transmissive liquid crystal display device of FIG.

  In the fourth embodiment of the present invention, the same reference numerals are assigned to the same layers as in the first embodiment of the present invention. Therefore, the description of the same parts as those of the first embodiment of the present invention is omitted.

  A pixel electrode 104 connected to the drain electrode of the thin film transistor is formed in each pixel region on the insulating film 102 of the first substrate 100. Here, the pixel electrode 104 is formed with a first open pattern 115a such as a slit or a hole for dividing the unit pixel into multi-domains. A plurality of second open patterns 115b such as slits or holes for inducing a fringe field to reduce the effective electric field and reduce the driving voltage are formed on the pixel electrode 104 of the reflective portion.

  On the second substrate 110 which is a color filter array substrate, a black matrix layer (not shown) is formed so as to correspond to a region other than the pixel region, and R for reproducing colors corresponding to the pixel region. , G, B color filter layers 112 are formed, and a common electrode 114 is formed on the R, G, B color filter layers 112.

  As described above, since the plurality of second open patterns 115b are formed in the pixel electrode 104 of the reflective portion, even when the same voltage is applied to the reflective portion and the transmissive portion, the birefringence (Δneff) can be made different. Thus, a single gap anti-transmissive liquid crystal display device can be realized.

  Here, the second open pattern 115b formed on the pixel electrode 104 of the reflective portion has a higher density than the first open pattern 115a, and the width b of the second open pattern 115b formed on the pixel electrode 104 of the reflective portion is The first open pattern 115a for domain formation is formed narrower than the width a. If the width a of the first open pattern 115a is 6 to 10 μm, the width b of the second open pattern 115b is designed to be about 1 to 5 μm.

  Accordingly, a multi-domain is not formed depending on the second open pattern 115b, and an effective electric field is reduced by a fringe field, the transmission part has an operating characteristic of Δnd = λ / 2, and the reflection part has an Δnd = λ / 4 operating characteristics.

  The fourth embodiment of the present invention can also be applied to the VA mode anti-transmissive liquid crystal display device as in the second and third embodiments of the present invention.

  That is, both the pixel electrode 104 and the common electrode 114 have a VA mode anti-transmissive liquid crystal display device (FIG. 6) in which a first open pattern 115a for dividing a unit pixel into multi-domains is formed, and the pixel electrode 104 has a unit In the VA mode anti-transmissive liquid crystal display device (FIG. 7) in which a first open pattern 115a for dividing pixels into multi-domains is formed and a protrusion 116 is formed on the common electrode 114, the pixel electrode 104 of the reflective portion is formed. In addition, a plurality of second open patterns 115b such as slits or holes for inducing a fringe field may be formed.

In a VA mode anti-transmissive liquid crystal display device in which a first open pattern such as a slit or a hole for forming a multi-domain is formed in a common electrode and a protrusion is formed on a pixel electrode, A second open pattern for forming a fringe field can be formed on the common electrode or the pixel electrode of the reflective portion. This will be specifically described below.

  FIG. 10 is a structural sectional view of a VA mode anti-transmissive liquid crystal display device according to a fifth embodiment of the present invention.

  In the fifth embodiment of the present invention, the same reference numerals are assigned to the same layers as those in the first embodiment of the present invention. Therefore, the description of the same parts as those of the first embodiment of the present invention is omitted.

  A pixel electrode 104 connected to the drain electrode of the thin film transistor is formed in each pixel region on the insulating film 102 of the first substrate 100. Here, a protrusion 116 for dividing the unit pixel into multi domains is formed on the pixel electrode 104.

  On the second substrate 110, which is a color filter array substrate, a black matrix layer (not shown) is formed so as to correspond to a region other than the pixel region, and R for reproducing colors corresponding to the pixel region, The G and B color filter layers 112 are formed, and the common electrode 114 is formed on the R, G, and B color filter layers 112.

  In the common electrode 114, a first open pattern 115a such as a slit or a hole is formed to make a unit pixel into a multi-domain. A plurality of second open patterns 115b such as slits or holes for inducing a fringe field to reduce the effective electric field and reduce the driving voltage are formed on the common electrode 114 of the reflecting portion. .

  As described above, since the plurality of second open patterns 115b are formed on the common electrode 114 of the reflective portion, even if the same voltage is applied to the reflective portion and the transmissive portion, the birefringence (Δneff) is made different. A single gap anti-transmissive liquid crystal display device can be implemented.

  Here, the second open pattern 115b formed on the common electrode 114 of the reflective portion has a higher density than the first open pattern 115a, and the width b of the second open pattern 115b formed on the common electrode 114 of the reflective portion is The first open pattern 115a for domain formation is formed narrower than the width a. If the width a of the first open pattern 115a is 6 to 10 μm, the width b of the second open pattern 115b is designed to be about 1 to 5 μm.

  Therefore, the multi-domain is not formed by the second open pattern 115b, and the effective electric field is reduced by the fringe field. As a result, the transmission part has an operation characteristic of Δnd = λ / 2, and the reflection part has an operation characteristic of Δnd = λ / 4. It will have characteristics.

Sixth Embodiment On the other hand, in the first to fifth embodiments of the present invention, the second open pattern for inducing the fringe field can be formed on both the pixel electrode and the common electrode of the reflecting portion. This will be specifically described as follows.

  FIG. 11 is a structural cross-sectional view of a VA mode anti-transmissive liquid crystal display device according to a sixth embodiment of the present invention.

  As described above, the VA mode anti-transmissive liquid crystal display device forms a first open pattern such as a slit or a hole for forming a multi-domain in the pixel electrode or the common electrode. A first open pattern such as a slit or a hole for forming a first open pattern is formed, or a first open pattern such as a slit or a hole is formed on either the pixel electrode or the common electrode to form a multi-domain. The remaining one has a structure for forming a protrusion.

  In such a structure, a second open pattern for inducing a fringe field is formed on both the pixel electrode and the common electrode of the reflective portion.

  In the VA mode anti-transmissive liquid crystal display device having various structures as described above, FIG. 11 is a diagram illustrating a structure in which a first open pattern for forming a multi-domain is formed on a pixel electrode.

  As shown in FIG. 11, the anti-transmission type liquid crystal display device according to the sixth embodiment of the present invention is formed with the first and second substrates 100 and 110 spaced apart with a liquid crystal layer 150 interposed therebetween. . Each pixel region has a structure divided into a reflective portion and a transmissive portion, and a backlight unit (not shown) for providing backlight light is installed below the first substrate 100.

  On the first substrate 100 which is a TFT array substrate, a plurality of gates and data lines (not shown) are arranged so as to intersect with each other to define a pixel region, and an intersection of each gate line and data line. A plurality of thin film transistors (not shown) are formed.

  Here, each thin film transistor includes a gate electrode protruding from the gate line, a gate insulating layer covering the gate electrode, a semiconductor layer formed on the gate insulating film on the gate electrode, and formed on both sides of the semiconductor layer. A source electrode and a drain electrode. Here, the source electrode protrudes from the data line.

  A protective film (not shown) is formed on the entire surface of the substrate on which such a thin film transistor is formed, a reflective plate 101 that reflects external light is formed on the protective film of the reflective portion, and the substrate on which the reflective plate 101 is formed. An insulating film 102 is formed on the entire surface.

  A pixel electrode 104 connected to the drain electrode of the thin film transistor is formed in each pixel region on the insulating film 102 of the first substrate 100. Here, the pixel electrode 104 is formed with a first open pattern 115a such as a slit or a hole for dividing the unit pixel into multi-domains.

  Of course, the reflective plate 101 can be electrically connected to the drain electrode of the thin film transistor, and the pixel electrode 104 can be electrically connected to the reflective plate 101.

  In addition, a plurality of second open patterns 115b such as slits or holes are formed on the pixel electrode 104 of the reflective portion so as to induce a fringe field so that the driving voltage is reduced by reducing the effective electric field.

  On the second substrate 110, which is a color filter array substrate, a black matrix layer (not shown) is formed so as to correspond to a region other than the pixel region, and R for reproducing colors corresponding to the pixel region, The G, B color filter layer 112 is formed, and the common electrode 114 is formed on the R, G, B color filter layer 112.

  Among the common electrodes 114, a plurality of second open patterns 115b such as slits or holes for inducing a fringe field and reducing a driving voltage by reducing an effective electric field are formed on the common electrode 114 of the reflecting portion. .

  As described above, since the plurality of second open patterns 115b are formed on the pixel electrode 104 and the common electrode 114 of the reflective portion, even if the same voltage is applied to the reflective portion and the transmissive portion, the birefringence (Δneff) It is possible to implement a single-gap anti-transmission type liquid crystal display device by making the difference.

  Here, the second open pattern 115b formed on the pixel electrode 104 and the common electrode 114 in the reflective portion has a higher density than the first open pattern 115a, and the second open pattern 115b formed on the common electrode 114 in the reflective portion. The width b is formed narrower than the width a of the first open pattern 115a for forming the domain.

  Accordingly, the multi-domain is not formed by the second open pattern 115b, and the effective electric field is reduced by the fringe field. As a result, the transmission part has an operating characteristic of Δnd = λ / 2, and the reflective part has an operating characteristic of Δnd = λ / 4. Will have.

  In the sixth embodiment of the present invention, the density and width of the second open pattern 115b may be the same as or smaller than those of the first to fifth embodiments of the present invention.

  Although not shown, in the VA mode anti-transmissive liquid crystal display device having the various structures described above, forming the second open pattern for inducing the fringe field in the pixel electrode and the common electrode of the reflective portion is the first aspect of the present invention. This can be fully understood from the second to fifth embodiments.

  Further, the simulations of the second to sixth embodiments of the present invention can obtain values similar to those described with reference to FIGS. 4A to 5.

  FIG. 12 is a plan view showing various forms of second open patterns that can be implemented in the embodiments of the present invention.

  On the other hand, in the first to sixth embodiments of the present invention, the shape of the second open pattern 115b is a comb tooth shape, but the shape of the second open pattern 115b is not limited to this. It can be varied as shown.

  That is, the pixel electrode or the common electrode of the reflecting portion has various shapes such as a web shape (FIG. 12a), a window shape (FIGS. 12b and 12c) in which a horizontal beam or a vertical beam is arranged, and a grid shape (FIG. 12e). A second open pattern having a different shape can be formed.

  Therefore, in the anti-transmissive liquid crystal display device having a single cell gap structure according to the present invention, it is not necessary to perform the overcoat layer forming process. It can be formed and adjusted so that the voltage characteristics of the reflection part and the transmission part are substantially the same.

FIG. 6 is a structural cross-sectional view of a conventional VA mode anti-transmissive liquid crystal display device. 1 is a structural cross-sectional view of a VA mode anti-transmissive liquid crystal display device according to a first embodiment of the present invention; FIG. 3 is a plan view showing a common electrode of a reflection portion of the anti-transmissive liquid crystal display device of FIG. 2. FIG. 3 is a plan view showing a pixel electrode of a reflection part of the anti-transmissive liquid crystal display device of FIG. 2. 3B is a plan view showing a state where the common electrode of FIG. 3A and the pixel electrode of FIG. 3 is an equipotential line graph simulated at a reflection portion of the anti-transmissive liquid crystal display device according to the first embodiment of the present invention. 3 is an equipotential line graph simulated in a transmissive part of the anti-transmissive liquid crystal display device according to the first embodiment of the present invention. 6 is a graph comparing the driving voltage (B) of the anti-transmissive liquid crystal display device according to the present invention and the driving voltage (B ′) of the anti-transmissive liquid crystal display device according to the prior art. FIG. 6 is a structural cross-sectional view of a VA mode anti-transmissive liquid crystal display device according to a second embodiment of the present invention. FIG. 6 is a structural cross-sectional view of a VA mode anti-transmissive liquid crystal display device according to a third embodiment of the present invention. FIG. 6 is a structural cross-sectional view of a VA mode anti-transmissive liquid crystal display device according to a fourth embodiment of the present invention. It is a top view which shows the pixel electrode of the permeation | transmission part of the anti-transmissive liquid crystal display device of FIG. It is a top view which shows the pixel electrode of the reflection part of the anti-transmissive liquid crystal display device of FIG. FIG. 10 is a structural cross-sectional view of a VA mode anti-transmissive liquid crystal display device according to a fifth embodiment of the present invention; FIG. 10 is a structural cross-sectional view of a VA mode anti-transmissive liquid crystal display device according to a sixth embodiment of the present invention. It is a top view which shows the 2nd open pattern of various forms which can be implemented in each Example of this invention.

Explanation of symbols

100 First substrate 101 Reflector 102 Insulating film 104 Pixel electrode 110 Second substrate 112 Color filter layer 114 Common electrode 150 Liquid crystal side

Claims (9)

In the anti-transmissive liquid crystal display device in which the unit pixel region is divided into a reflective part and a transmissive part
A first substrate and a second substrate facing each other;
A pixel electrode formed in a pixel region on the first substrate;
A reflector formed on the reflector on the first substrate;
A common electrode formed on the second substrate;
At least one first open pattern formed on at least one of the pixel electrode and the common electrode to form a multi-domain;
A plurality of second open patterns formed in at least one of the pixel electrode and the common electrode to induce a fringe field;
An anti-transmissive liquid crystal display device, comprising:   The anti-transmissive liquid crystal display device according to claim 1, wherein the plurality of first open patterns are formed at a density higher than a density of the first open patterns.   2. The anti-transmissive liquid crystal display device according to claim 1, wherein a width of the first open pattern is 6 to 10 μm and a width of the second open pattern is 1 to 5 μm.   The anti-transmissive liquid crystal display device according to claim 1, wherein the first open pattern and the second open pattern are formed in a slit or hole shape.   The anti-transmissive liquid crystal display device according to claim 1, further comprising a protrusion formed on at least one of the pixel electrode and the common electrode to form a multi-domain.   The anti-transmissive liquid crystal display device according to claim 1, wherein the first substrate is a thin film transistor array substrate, and the second substrate is a color filter array substrate.   The anti-transmissive liquid crystal display device according to claim 1, wherein the pixel electrode or the common electrode of the reflective portion where the plurality of second open patterns are formed is formed in a spider web shape.   The pixel electrode or the common electrode of the reflection part on which the plurality of second open patterns are formed is formed in the shape of a window in which a horizontal beam or a vertical beam is disposed. Anti-transmission type liquid crystal display device.   2. The anti-transmissive liquid crystal display device according to claim 1, wherein the pixel electrode or the common electrode of the reflective portion where the plurality of second open patterns are formed is formed in a grid shape.