JP2006512563A - 局部的に酸化された多孔質シリコンからなる装置、および、その製造方法 - Google Patents
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Abstract
Description
工程(a):表面(10A、10B)を有する、シリコンからなる支持材を準備する。
工程(b):電気化学エッチングによって、支持材の表面(10A)に、支持材の厚さよりも浅い深度を有する止まり穴を形成する。さらに、厚いシリコン壁を有する領域間トランジションを形成するために、略規則的に配列された止まり穴同士の間隔を部分的に変化させる。このとき、止まり穴の間隔を広げることによって、領域間トランジション間のシリコン壁の厚みを、当該領域内におけるシリコン壁よりも厚くする。
工程(c):上記表面(10A)と、工程(b)において形成された止まり穴の表面とにおける少なくとも一部分に、マスク層を配置する。
工程(d):少なくとも止まり穴の底まで支持材を除去し、支持材の表面(10A)から表面(10B)まで貫通する細孔(11)を得る。
工程(e):上記マスク層を除去する。
工程(f):工程(e)で得られた支持材を熱酸化することにより、シリコン壁の厚さに応じて、シリコン壁の薄い領域を完全に酸化する一方、厚いシリコン壁を有する領域間トランジションではシリコン壁を完全に酸化せず、シリコン核を壁内に残した状態とする。
−本発明の装置またはバイオチップを調製する工程と、
−支持材の細孔のうちの少なくとも1つに合成物質を挿入する工程と、
−上記合成物質を少なくとも光励起させるために、細孔に光を照射させる工程とを含んでいる。
10A、10B 支持材の表面
11 細孔
11A SiO2からなる細孔壁を有した1つまたは複数の細孔が形成された領域
12 シリコン核を有した複数の壁からなる枠
12A シリコン核
Claims (13)
- シリコンからなる平面的に形成されたマクロ多孔性の支持材(10)を備えた装置であって、上記支持材の表面領域における少なくとも一部分には、その一方の表面(10A)から他方の表面(10B)まで貫通した、直径500nm〜100μmの複数の細孔(11)が設けられており、
SiO2からなる細孔壁を有する1つまたは複数の細孔が設けられた少なくとも一領域(11A)を有しており、
上記領域(11A)は、枠(12)によって囲まれており、
この枠(12)は、シリコン核(12A)を有する複数の壁から形成され、上記の細孔の長軸に対してほぼ平行に配置されているとともに、支持材の表面(10A、10B)で開口しており、
上記のシリコン核(12A)は、その断面全体が、枠(12)を形成している壁の表面に近づくにつれて二酸化シリコンとなることを特徴とする装置。 - 上記支持材(10)の厚さが、100〜5000μmであることを特徴とする請求項1に記載の装置。
- 上記細孔の密度が、104〜108/cm2の範囲にあることを特徴とする請求項1または2に記載の装置。
- SiO2からなる細孔壁を備えた上記の細孔(11)は、略正方形に形成されており、シリコン核(12A)を有する複数の壁から形成された枠(12)は、略正方形または長方形であることを特徴とする請求項1〜3のいずれか1項に記載の装置。
- DNA、蛋白質、およびリガンドからなる群から選択された捕捉分子が、上記細孔(11)のうちの少なくとも1つと、少なくとも局部的に共有結合されていることを特徴とする請求項1〜4のいずれか1項に記載の装置。
- 上記捕捉分子は、末端アミノ基またはチオール基を介してリンカー分子に結合されるオリゴヌクレオチドプローブであり、上記リンカー分子は、共有基および/またはイオン基を介して、細孔(11)に結合されることを特徴とする請求項5に記載の装置。
- 請求項1〜6のいずれか1項に記載の装置の製造方法であって、以下の工程(a)〜(f)を含むことを特徴とする製造方法。
工程(a):シリコンからなる、表面(10A、10B)を有する支持材を調製する。
工程(b):電気化学エッチングによって、支持材の表面(10A)に、支持材の厚さよりも浅い深度を有する止まり穴を形成する。さらに、厚いシリコン壁を有する領域間トランジションを形成するために、略規則的に配列された止まり穴同士の間隔を部分的に変化させる。このとき、止まり穴の間隔を広げることによって、領域間トランジション間のシリコン壁の厚みを、当該領域内におけるシリコン壁よりも厚くする。
工程(c):上記表面(10A)と、工程(b)において形成された止まり穴の表面とにおける少なくとも一部分に、マスク層を配置する。
工程(d):少なくとも止まり穴の底まで支持材を除去し、支持材の表面(10A)から表面(10B)まで貫通する細孔(11)を得る。
工程(e):上記マスク層を除去する。
工程(f):工程(e)で得られた支持材を熱酸化することにより、シリコン壁の厚さに応じて、シリコン壁の薄い領域を完全に酸化する一方、厚いシリコン壁を有する領域間トランジションではシリコン壁を完全に酸化せず、シリコン核を壁内に残した状態とする。 - 上記マスク層をSi3N4から構成することを特徴とする、請求項7に記載の方法。
- 工程(d)における支持材の除去を、KOHを用いたエッチング、または、CMP処理によって行うことを特徴とする請求項7または8に記載の方法。
- 工程(d)において形成した細孔を、工程(e)によって処理する前に拡大または拡張することを特徴とする請求項7〜9のいずれか1項に記載の方法。
- Si(100)を支持材として用い、工程(d)で形成した細孔の直径を、工程(e)によって処理する前にKOHを用いたエッチングによって拡大されることによって略正方形の細孔を得ることを特徴とする請求項10に記載の方法。
- 請求項1〜6のいずれか1項に記載の装置の使用であって、以下の(1)および(2)としての使用。
(1)生化学的反応および/または生化学的結合の検出方法に使用する被検体支持体。
(2)上記の(1)に関し、特に、酵素反応、核酸ハイブリダイゼーション、タンパク質とタンパク質との相互作用、および、タンパク質とリガンドとの相互作用を研究するための装置。 - 化学的または生化学的反応、あるいは化学的または生化学的合成の制御方法であって、
請求項1〜6のいずれか1項に記載の装置を準備する工程と、
上記支持材の細孔の少なくとも1つに合成物質を挿入する工程と、
上記合成物質を少なくとも光励起するために、細孔に光を照射する工程とを含むことを特徴とする制御方法。
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DE10217569A DE10217569A1 (de) | 2002-04-19 | 2002-04-19 | Vorrichtung auf Basis von partiell oxidiertem porösen Silizium |
PCT/EP2003/003293 WO2003089925A2 (de) | 2002-04-19 | 2003-03-28 | Vorrichtung auf basis von partiell oxidiertem porösen silizium und verfahren zu deren herstellung |
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EP (1) | EP1497030B1 (ja) |
JP (1) | JP4125244B2 (ja) |
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DE102004018846A1 (de) * | 2004-04-19 | 2005-11-10 | Infineon Technologies Ag | Partiell oxidiertes makroporöses Silizium mit nichtzusammenhängenden Siliziumwänden |
DE102004027364A1 (de) * | 2004-06-04 | 2005-12-29 | Infineon Technologies Ag | Poröse, bereichsweise transparente Substrate mit optischen Barrieren |
DE102004034486B4 (de) * | 2004-07-16 | 2007-08-23 | Infineon Technologies Ag | Verfahren zum Nachweis von Lumineszenzlicht aus einer porösen Trägerstruktur |
CN100419011C (zh) * | 2004-11-30 | 2008-09-17 | 财团法人工业技术研究院 | 改质介孔二氧化硅粉体、生成低介电环氧树脂与低介电聚亚酰胺树脂的前驱溶液 |
EP1693337A1 (de) * | 2005-02-18 | 2006-08-23 | Infineon Technologies AG | Makroporöser Träger für chemische Amplifikationsreaktionen |
CN100564541C (zh) * | 2005-06-13 | 2009-12-02 | 中国科学院电子学研究所 | 多孔氧化硅微流体样品预处理芯片 |
DE102006033875A1 (de) * | 2006-07-21 | 2008-01-31 | Siemens Ag | Analysesystem basierend auf porösem Material für hochparallele Einzelzelldetektion |
DE102006049562A1 (de) * | 2006-10-20 | 2008-04-24 | Qimonda Ag | Substrat mit Durchführung und Verfahren zur Herstellung desselben |
DE102007019552B4 (de) | 2007-04-25 | 2009-12-17 | Infineon Technologies Ag | Verfahren zur Herstellung eines Substrats mit Durchführung sowie Substrat und Halbleitermodul mit Durchführung |
TWI340009B (en) * | 2008-01-18 | 2011-04-01 | Quanta Comp Inc | Electronic device and latch structure thereof |
WO2017169715A1 (ja) * | 2016-03-30 | 2017-10-05 | 富士フイルム株式会社 | 検査デバイス、検査装置および検査方法 |
WO2017169716A1 (ja) * | 2016-03-30 | 2017-10-05 | 富士フイルム株式会社 | 検査デバイス、検査装置および検査方法 |
DE102018107810A1 (de) | 2018-04-03 | 2019-10-10 | Helmholtz-Zentrum Dresden - Rossendorf E.V. | Transparenter Objektträger |
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WO2003089925A2 (de) | 2003-10-30 |
JP4125244B2 (ja) | 2008-07-30 |
DE50305038D1 (de) | 2006-10-26 |
US7410794B2 (en) | 2008-08-12 |
EP1497030B1 (de) | 2006-09-13 |
CN1646224A (zh) | 2005-07-27 |
US20050233438A1 (en) | 2005-10-20 |
EP1497030A2 (de) | 2005-01-19 |
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WO2003089925A3 (de) | 2004-02-05 |
DE10217569A1 (de) | 2003-11-13 |
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