JP2006186239A - Polishing pad and method for manufacturing semiconductor device - Google Patents

Abstract

There is a problem of abnormal retention with respect to a groove that holds and discharges slurry on a polishing surface. The present invention provides a polishing pad having an excellent balance between supply and discharge of polishing slurry.
A polishing pad 1 having a polishing layer, the polishing layer is formed of a porous material, the polishing surface of the polishing layer has a groove, and at least a part of the inner surface of the groove is non-porous. A polishing pad having a surface.
[Selection] Figure 1

Description

  The present invention relates to a polishing pad used when planarizing unevenness on the surface of an object to be polished such as a semiconductor wafer by a CMP method.

  A semiconductor device is manufactured by forming a conductive film on the surface of a semiconductor wafer, forming a wiring layer by performing photolithography, etching, and the like, and forming an interlayer insulating film on the wiring layer. In recent years, miniaturization of wiring portions and multilayer wiring have been advanced due to demands for higher density of semiconductor integrated circuits. Along with this, the demand for the surface of the semiconductor wafer having a flatter surface has increased, and a technique for flattening the irregularities on the surface of the semiconductor wafer has become more important.

  A CMP (Chemical Mechanical Polishing) method is generally used as a method for flattening irregularities on the surface of an object to be polished such as a semiconductor wafer. The CMP method is a technique in which a polishing surface of a semiconductor wafer is pressed against a polishing surface of a polishing pad and is polished using a slurry-like abrasive in which abrasive grains are dispersed (hereinafter referred to as polishing slurry or slurry). .

  A polishing apparatus generally used in CMP will be described with reference to FIG. FIG. 1 is a schematic configuration diagram showing an example of a polishing apparatus used in the CMP method. This polishing apparatus includes a polishing surface plate 2 that supports a polishing pad 1, a support base 5 (such as a polishing head) that supports an object to be polished 4 (such as a semiconductor wafer), a supply mechanism 8 for an abrasive 3, and a uniform semiconductor wafer. A backing material (not shown) for pressurization is provided. The polishing pad is attached to the polishing surface plate by being attached with, for example, a double-sided tape. The polishing surface plate 2 and the support table 5 are respectively provided with rotating shafts 6 and 7, and the polishing surface plate 2 and the support table 5 are arranged such that the polishing pad 1 and the object 4 to be polished are opposed to each other. Be placed. Further, the support base 5 is usually provided with a pressurizing mechanism (not shown) for bringing the workpiece 4 into contact with the polishing pad 1.

  In such a polishing method, various attempts have been made for the purpose of improving the polishing characteristics of an object to be polished. Among them, various attempts have been proposed regarding the grooves for holding and discharging the slurry on the polishing surface.

  In Japanese Patent No. 2647046 (Patent Document 1), a groove through which an abrasive flows is formed on the surface of the inner part and the outer peripheral part of the polishing cloth, and the abrasive is retained except for the surface where the groove is formed. A polishing cloth characterized in that a plurality of holes are formed is described. As a specific embodiment of such a polishing cloth (polishing pad), FIG. 1 of the same document describes a polishing cloth having a lattice-like groove in the central portion and a peripheral portion and a hole in the middle portion. Such holes are generally provided by opening a large area at once using punches arranged in one or several rows. And it is difficult to provide such a hole using the processing apparatus generally used. Moreover, the effect with respect to abnormal stagnation based on the balance between supply and discharge of the polishing slurry is not particularly disclosed. The “abnormal stagnation” described in the present specification refers to a state in which the polishing slurry is remarkably non-uniformly held on the polishing surface of the polishing pad and adversely affects the polishing of the object to be polished.

  Japanese Patent Application Laid-Open No. 10-249710 (Patent Document 2) describes a polishing pad in which the center of a groove shape having a geometric center and the center of the polishing pad are provided eccentrically. This document describes that the problem that the uniformity of the groove shape is transferred to the silicon wafer to be processed due to the deviation of the center of the polishing pad from the center of the concentric groove can be solved. However, according to the present invention, it is difficult to prevent a decrease in the polishing rate at the center portion of the wafer. Moreover, the effect with respect to abnormal stagnation based on the balance between supply and discharge of the polishing slurry is not particularly disclosed.

  Japanese Unexamined Patent Publication No. 11-070463 (Patent Document 3) describes a polishing pad having a first region having a plurality of concentric grooves and a second region having a second pitch. This polishing pad has two regions having different groove pitches, and it is described that the polishing uniformity is improved. However, the problem of abnormal stagnation based on the balance between supply and discharge of the polishing slurry is not disclosed, and it is difficult to improve polishing uniformity.

  Japanese Unexamined Patent Publication No. 2000-198061 (Patent Document 4) describes a polishing pad having a plurality of annular grooves and a plurality of streamline grooves. This polishing pad attempts to positively control the flow of slurry by making the groove shape into streamline grooves. However, in such a polishing pad, there is a possibility that the slurry required for polishing flows out along the streamline grooves. Further, the effect on abnormal stagnation based on the balance between supply and discharge of the polishing slurry is not particularly disclosed, and sufficient polishing uniformity cannot be obtained.

  Japanese Patent Application Laid-Open No. 2002-224950 (Patent Document 5) describes a polishing pad in which slurry stagnation hardly occurs as a bottom arc-shaped portion in a groove shape. In this polishing pad, an attempt is made to control the flow of the slurry so as to be smooth by making the groove shape into a bottom arc shape. In the polishing pad described in Patent Document 5, consideration is given to the groove shape and the surface roughness. However, it differs from the present invention in that the material of the polished surface configuration is spheroidal graphite cast iron. Further, the polishing target of the polishing pad described in Patent Document 5 is a bare wafer or a glass substrate, and is different from the polishing target in the present invention. Furthermore, the problem of abnormal stagnation based on the balance between supply and discharge of the polishing slurry in the case of using a porous material as the polishing layer as in the present invention is not mentioned.

  Japanese Unexamined Patent Application Publication No. 2004-009156 (Patent Document 6) describes a polishing pad in which grooves are formed on the polishing surface and the surface roughness of the inner surface of the grooves is 20 μm or less. Regarding this polishing pad, consideration is given to the surface roughness on the inner surface of the groove. The surface roughness of the groove disclosed here is obtained by forming the groove by cutting or molding the material of the polished surface. However, when forming a groove in a porous material using the method described in Patent Document 6, it is very difficult to make the surface roughness of the inner surface of the groove less than 20 μm. It became clear by the follow-up experiment by et al. From this knowledge, it can be said that the gist of the invention described in Patent Document 6 is in the selection of the material constituting the polishing layer rather than the groove forming method, and is different from the present invention in this respect. Furthermore, the problem of abnormal stagnation based on the balance between supply and discharge of the polishing slurry when using a porous material as the polishing layer as in the present invention is not mentioned.

Japanese Patent No. 2647046 JP-A-10-249710 Japanese Patent Application Laid-Open No. 11-070463 JP 2000-198061 A JP 2002-224950 A JP 2004-009156 A

  An object of the present invention is to solve the above-described problems of the prior art. More specifically, an object of the present invention is to provide a polishing pad excellent in the balance between supply and discharge of the polishing slurry.

The present invention
A polishing pad having a polishing layer,
This polishing layer is formed from a porous material,
The polishing surface of the polishing layer has grooves, and at least a portion of the inner surface of the grooves has a non-porous surface;
A polishing pad is provided, whereby the above object is achieved.

  The nonporous surface is preferably a polishing pad having a centerline average roughness (Ra) of a roughness curve of 1.0 to 5.0 μm.

  Further, the groove on the polishing surface of the polishing layer is preferably a polishing pad having a groove depth of 0.5 to 1.5 mm.

  Moreover, it is preferable that the said polishing layer is a polishing pad formed from the porous material which has a bubble with an average bubble diameter of 20-70 micrometers.

  Furthermore, it is preferable that the polishing pad has a specific gravity of 0.5 to 1.0.

  Furthermore, it is preferable that the polishing pad has a compressibility of the polishing layer of 0.5 to 5.0%.

  The polishing pad is preferably a polishing pad having an Asker D hardness of 45 to 65 degrees.

  Further, a polishing pad having the polishing layer and the cushion layer, wherein the cushion layer has a lower hardness than the polishing layer is preferable.

  And this invention also provides the manufacturing method of the semiconductor device including the process of grind | polishing the surface of a semiconductor wafer using said polishing pad.

  According to the present invention, it is possible to provide a polishing pad having excellent polishing characteristics and excellent retention and discharge of slurry during polishing of an object to be polished such as a semiconductor wafer. This polishing pad has improved abnormal retention in the groove of the slurry during polishing. Using this polishing pad, it is possible to satisfactorily polish an object to be polished such as a semiconductor wafer.

  The polishing pad of the present invention is a polishing pad having a polishing layer, and the polishing layer is formed from a porous material. The polishing layer has a groove on the polishing surface, and the inner surface of the groove has a non-porous surface.

  The polishing layer of the polishing pad of the present invention is formed from a porous material. Examples of porous materials include polyurethane resins, polyester resins, polyamide resins, acrylic resins, polycarbonate resins, halogen resins (polyvinyl chloride, polytetrafluoroethylene, polyvinylidene fluoride, etc.), polystyrene, olefin resins (polyethylene, polypropylene, etc.) ), Porous materials such as epoxy resins and photosensitive resins. These resins may be used alone or in combination of two or more.

  Of the above resins, it is particularly preferable to use a polyurethane resin. This is because the polyurethane resin is excellent in abrasion resistance, and a polymer having desired physical properties can be easily obtained by variously changing the raw material composition.

  The polyurethane resin is prepared from an isocyanate-terminated urethane prepolymer and a chain extender. The isocyanate-terminated urethane prepolymer comprises a polyisocyanate, a high molecular polyol, and a low molecular polyol.

  The polyisocyanate that can be used is not particularly limited. Specific examples of polyisocyanates that can be used include, but are not limited to, 2,4- and / or 2,6-toluene diisocyanate, 2,2'-, 2,4'- and / or 4,4'-. Diphenylmethane diisocyanate, 1,5-naphthalene diisocyanate, p- and m-phenylene diisocyanate, dimeryl diisocyanate, xylylene diisocyanate, diphenyl-4,4'-diisocyanate, 1,3- and 1,4-tetramethylxylidene diisocyanate, Tetramethylene diisocyanate, 1,6-hexamethylene diisocyanate, dodecamethylene diisocyanate, cyclohexane-1,3- and 1,4-diisocyanate, 1-isocyanato-3-isocyanatomethyl-3,5,5-trimethyl Rhohexane (= isophorone diisocyanate), bis- (4-isocyanatocyclohexyl) methane (= hydrogenated MDI), 2- and 4-isocyanatocyclohexyl-2′-isocyanatocyclohexylmethane, 1,3- and 1,4- Bis- (isocyanatomethyl) -cyclohexane, bis- (4-isocyanato-3-methylcyclohexyl) methane, and the like. These may be used alone or as a mixture of two or more. The polyisocyanate can be appropriately selected according to the pot life required at the time of casting.

  Examples of the polymer polyol include hydroxy-terminated polyester, polycarbonate, polyester carbonate, polyether, polyether carbonate, and polyester amide. Of these, polyethers and polycarbonates having good hydrolysis resistance are preferred, and polyethers are particularly preferred from the viewpoint of cost and melt viscosity. Polyether polyols include reaction products of starting compounds having reactive hydrogen atoms with alkylene oxides such as ethylene oxide, propylene oxide, butylene oxide, styrene oxide, tetrahydrofuran, epichlorohydrin or mixtures of these alkylene oxides. It is done. Examples of the starting compound having a reactive hydrogen atom include water, bisphenol A, and a dihydric alcohol for producing a polyester polyol as described below.

  Further, examples of the polycarbonate having a hydroxy group include 1,3-propanediol, 1,4-butanediol, 1,6-hexanediol, diethylene glycol, polyethylene glycol, polypropylene glycol and / or polytetramethylene glycol. The reaction product of diol and phosgene, diallyl carbonate (for example, diphenyl carbonate) or cyclic carbonate (for example, propylene carbonate) can be mentioned. Examples of the polyester polyol include a reaction product of a dihydric alcohol and a dibasic carboxylic acid, but in order to improve hydrolysis resistance, a longer distance between ester bonds is preferable. A combination is desirable.

  Although it does not specifically limit as dihydric alcohol, For example, ethylene glycol, 1,3- and 1,2-propylene glycol, 1,4- and 1,3- and 2,3-butylene glycol, 1,6-hexane Glycol, 1,8-octanediol, neopentyl glycol, cyclohexanedimethanol, 1,4-bis- (hydroxymethyl) -cyclohexane, 2-methyl-1,3-propanediol, 3-methyl-1,5-pentane Examples include diol, 2,2,4-trimethyl-1,3-pentanediol, diethylene glycol, dipropylene glycol, triethylene glycol, tripropylene glycol, and dibutylene glycol.

  The dibasic carboxylic acid includes aliphatic, alicyclic, aromatic and / or heterocyclic ones. From the necessity of making the terminal NCO prepolymer to be liquid or low melt viscosity, Alicyclic ones are preferred. When applying an aromatic system, it is preferable to use it together with an aliphatic or alicyclic one. Examples of these carboxylic acids include, but are not limited to, succinic acid, adipic acid, suberic acid, azelaic acid, sebacic acid, phthalic acid, isophthalic acid, terephthalic acid, naphthalenedicarboxylic acid, cyclohexanedicarboxylic acid (o-, m-, p-), dimer fatty acids such as oleic acid and the like. These polyester polyols may have a part of carboxyl end groups. For example, a lactone such as ε-caprolactone or a polyester of a hydroxycarboxylic acid such as ε-hydroxycaproic acid can be used.

  The number average molecular weight of the polymer polyol is not particularly limited, but is preferably 500 to 2000 from the viewpoint of the elastic properties of the resulting polyurethane. When the number average molecular weight is less than 500, the resulting polyurethane resin does not have sufficient elastic properties and becomes a brittle resin. Therefore, the polishing layer produced from this polyurethane resin becomes hard and brittle, which causes scratches on the polished surface of the object to be polished. Further, since such a polishing pad is easily worn, it is not preferable from the viewpoint of the life of the polishing pad. On the other hand, when the number average molecular weight exceeds 2000, the resulting polyurethane resin becomes soft, and the polishing layer produced from this polyurethane resin tends to have poor planarization characteristics.

  Examples of the low molecular polyol include dihydric alcohols used for producing the above-described polyester polyol. As the low molecular polyol of the present invention, it is preferable to use any one of diethylene glycol, 1,3-butylene glycol, 3-methyl-1,5-pentanediol and 1,6-hexamethylene glycol or a mixture thereof. When ethylene glycol, which is a lower molecular weight polyol, is used, the reactivity of the casting molding becomes too fast, or the hardness of the finally obtained polyurethane abrasive molding becomes too high. There is a risk that the performance as a. On the other hand, when a long-chain dihydric alcohol is used rather than 1,6-hexamethylene glycol, the reactivity at the time of cast molding and the hardness of the finally obtained polyurethane abrasive molding can be obtained. In some cases, there are problems such as high prices.

  Further, the ratio of the high molecular weight component to the low molecular weight component in the polyol is determined by the characteristics required for the polishing layer produced therefrom.

  As the chain extender used in the present invention, for example, an organic diamine compound can be used. Examples of organic diamine compounds that can be used as chain extenders include, but are not limited to, 4,4′-methylenebis (o-chloroaniline), 2,6-dichloro-p-phenylenediamine, 4,4 ′. -Polyamines exemplified by methylenebis (2,3-dichloroaniline) and the like 3,3'-dichloro-4,4'-diaminodiphenylmethane, chloroaniline-modified dichlorodiaminodiphenylmethane, 1,2-bis (2-aminophenylthio) ) Ethane, trimethylene glycol-di-p-aminobenzoate, 3,5-bis (methylthio) -2,6-toluenediamine and the like. Alternatively, the above-described low molecular weight polyol can also be used as a chain extender. These may be used alone or in combination of two or more.

  The ratio of the polyisocyanate, polyol, and chain extender in the preparation of the polyurethane resin can be variously changed depending on the molecular weight of each and the desired physical properties of the polishing layer produced therefrom. In order to obtain a polishing layer having excellent polishing characteristics, the number of isocyanate groups of the organic isocyanate relative to the total number of functional groups (hydroxyl group + amino group) of the polyol and the chain extender is preferably 0.95 to 1.15, and more preferably Is 0.99 to 1.10.

  The polyurethane resin can be prepared by a usual method. If necessary, stabilizers such as antioxidants, surfactants, lubricants, pigments, fillers, antistatic agents, and other additives may be added to the polyurethane resin.

  The method of foaming the resin used for preparing the polishing layer by foaming is not particularly limited. For example, foaming is performed by a method of adding hollow beads, a mechanical foaming method, a chemical foaming method, or the like. The method etc. are mentioned. In addition, although each method may be used together, the mechanical foaming method using the silicone type surfactant which is a copolymer of polyalkylsiloxane and polyether and does not have an active hydrogen group is preferable. As the silicone-based surfactant, SH-192 (manufactured by Toray Dow Corning Silicon) is exemplified as a suitable compound.

  The average bubble diameter of the bubbles contained in the porous material is preferably 20 to 70 μm. When the average bubble diameter is in the above range, planarity (flatness: less unevenness of each minute region of the semiconductor wafer) becomes better. The average bubble diameter of the bubbles is more preferably 30 to 50 μm. Examples of the method for measuring the average bubble diameter of the bubbles contained in the porous material include a method of measuring a predetermined amount of bubble diameter with an image processing apparatus or the like.

  The specific gravity of the polishing layer in the present invention is preferably 0.5 to 1.0. When the specific gravity is less than 0.5, the planarity (flatness) of the object to be polished may be deteriorated due to a decrease in strength of the surface of the polishing layer. On the other hand, when the specific gravity exceeds 1.0, the number of fine bubbles on the surface of the polishing layer tends to be small and planarity is good, but the polishing rate tends to be low. The specific gravity is a ratio between the mass of the sample and the mass of pure water at 4 ° C. under the same volume pressure of 1.01 bar. This specific gravity can be determined in accordance with JIS Z8807.

  The polishing layer in the present invention preferably has an Asker D hardness meter of 45 to 65 degrees. If the hardness is less than 45 degrees, the planarity (flatness) of the workpiece may be deteriorated. When the angle is greater than 65 degrees, the planarity is good, but the uniformity of the object to be polished (homogeneity: small variation in polishing amount on the entire surface of the semiconductor wafer) tends to decrease. The hardness of the polishing layer is more preferably an Asker D hardness meter of 40 to 60 degrees.

  The compressibility of the porous material is preferably 0.5 to 5.0%, more preferably 0.5 to 3.0%. If the compression ratio is within the above range, it is possible to sufficiently achieve both planarity and uniformity. The compression rate is a value calculated by the following formula.

[T1 is the thickness of the porous material when a stress load of 30 KPa (300 g / cm ² ) is maintained for 60 seconds from the unloaded state to the porous material, and T2 is 180 KPa (1800 g / cm ² ) from the T1 state. This is the thickness of the porous material when the stress load is maintained for 60 seconds. ]

  An example of a specific embodiment for producing a closed cell type polyurethane porous material preferably used as the polishing layer will be described below.

Stirring step for preparing a cell dispersion of isocyanate-terminated prepolymer A silicone-based surfactant is added to the isocyanate-terminated prepolymer and stirred with a non-reactive gas to disperse the non-reactive gas as fine bubbles, To do. When the isocyanate-terminated prepolymer is solid at room temperature, it is preheated to an appropriate temperature and melted before use.

Curing Agent (Chain Extender) Mixing Step A chain extender is added to the above cell dispersion and mixed and stirred.

Curing Step An isocyanate-terminated prepolymer mixed with a chain extender is cast and cured by heating.

  As the non-reactive gas used for forming the fine bubbles, non-flammable gases are preferable, and specific examples include noble gases such as nitrogen, oxygen, carbon dioxide, helium and argon, and mixed gases thereof. It is done. The use of air that has been dried to remove moisture is most preferred in terms of cost.

  A known stirring device can be used without any particular limitation as a stirring device for making non-reactive gas into fine bubbles and dispersing it in an isocyanate-terminated prepolymer containing a silicone surfactant. Specifically, a homogenizer, a dissolver, a two-axis planetary mixer (planetary mixer) and the like are exemplified. The shape of the stirring blade of the stirring device is not particularly limited, but when a whipper-type stirring blade is used, it is preferable because fine bubbles can be obtained.

  Note that different stirring devices may be used for the stirring for creating the bubble dispersion in the stirring step and the stirring for adding and mixing the chain extender in the mixing step. In particular, the stirring in the mixing step may not be stirring that forms bubbles, and it is preferable to use a stirring device that does not involve large bubbles. As such an agitator, a planetary mixer is suitable. The same stirring device may be used as the stirring device for the stirring step and the mixing step, and it may be used after adjusting the stirring conditions such as adjusting the rotation speed of the stirring blade as necessary.

  In the method for producing a polyurethane porous material, heating and post-curing the reacted porous material until it does not flow by pouring the cell dispersion into the mold has the effect of improving the physical properties of the porous material and is extremely suitable. It is. The bubble dispersion may be poured into the mold and immediately placed in a heating oven for post-cure. Under such conditions, heat is not immediately transferred to the reaction components, and the bubble diameter does not increase. The curing reaction is preferably performed at normal pressure because the bubble shape is stable.

  In the production of a polyurethane resin, a catalyst that promotes a known polyurethane reaction such as a tertiary amine type or an organic tin type may be used. The type and addition amount of the catalyst are selected in consideration of the flow time for pouring into a mold having a predetermined shape after the mixing step.

  Polyurethane porous material can be manufactured by batch feeding each component into a container and stirring, or by continuously supplying each component and non-reactive gas to the stirring device and stirring, It may be a continuous production method in which a dispersion is sent out to produce a molded product.

  The polishing layer of the polishing pad of the present invention can be produced by preparing a polyurethane resin sheet prepared as described above and cutting it into a predetermined size.

  The thickness of the polishing layer is not particularly limited, but is preferably 0.6 to 3.5 mm. As a method for producing a polishing layer having a thickness in the above range, a porous material block is made to have a predetermined thickness using a band saw type or canna type slicer, and a resin is poured into a mold having a cavity with a predetermined thickness. Examples thereof include a curing method and a method using a coating technique or a sheet molding technique.

  Further, the variation in the thickness of the polishing layer is preferably 100 μm or less, and particularly preferably 50 μm or less. When the thickness variation exceeds 100 μm, the polishing layer has a large undulation, and there are portions where the contact state with the object to be polished is different, which tends to adversely affect the polishing characteristics. Further, in order to eliminate the variation in the thickness of the polishing layer, generally, in the initial stage of polishing, the surface of the polishing layer is often dressed using a dresser in which diamond abrasive grains are electrodeposited or fused. In this case, when it exceeds the thickness range, the dressing time becomes long, and the production efficiency is lowered.

  Further, as another method of suppressing the variation in the thickness of the polishing layer, there is a method of buffing the surface of the polishing layer having a predetermined thickness. When buffing, it is preferable to carry out stepwise with abrasive sheets having different particle sizes.

  The polishing layer of the present invention is provided with a groove on a polishing surface that contacts the object to be polished and polishes the object to be polished. Due to the presence of the grooves, the polishing slurry supplied at the time of polishing the semiconductor device is efficiently held. The grooves also have the function of distributing the slurry more evenly on the polishing surface. Further, the groove also functions as a discharge path for temporarily retaining waste such as abrasion waste and used polishing slurry generated by polishing and discharging the waste to the outside without any problem. By providing the groove, it is possible to prevent destruction of the object to be polished that occurs when the object to be polished and the polishing layer are adsorbed.

  Regarding the groove on the polishing surface of the polishing layer, the cross-sectional shape in the width direction of the groove is not particularly limited, and examples thereof include a rectangular shape formed by a side surface and a bottom surface, a U shape, and a V shape. FIG. 2 is an explanatory diagram of a groove having a rectangular cross-sectional shape. The side surface of the groove and the bottom surface of the groove in this explanatory diagram correspond to the “inner surface of the groove”. In this specification, “the inner surface of the groove” means at least one of the side surface and the bottom surface of the groove. When the cross-sectional shape of the groove is U-shaped, the distinction between the side surface and the bottom surface, which is the inner surface of the groove, is not clear, and when it is V-shaped, only the side surface is configured.

  In the polishing pad of the present invention, the entire inner surface of the groove need not be a non-porous surface. For example, when the groove has a small groove depth and the groove has a short cross-sectional shape, it is considered that the benefits of the present invention can be sufficiently obtained even if only the bottom surface of the groove is a non-porous surface. However, it is more preferable that the entire inner surface of the groove, which is at least one of the side surface and the bottom surface of the groove, is a non-porous surface because a higher effect can be obtained.

  The shape of the groove on the polishing surface of the polishing layer is not particularly limited. For example, an annular groove such as a circle, a polygon (triangle, quadrangle, pentagon, etc.) or an ellipse can be provided on the polishing surface. The number of grooves on the polished surface is not particularly limited as long as it is 2 or more. The arrangement of these grooves is not particularly limited. For example, the grooves are arranged concentrically, the grooves are arranged eccentrically, and a plurality of other grooves are disposed inside the polishing surface surrounded by one annular groove. And the like in which an annular groove is arranged.

  Among these, it is preferable that the annular grooves are arranged concentrically. This is because the polishing function and the ease of groove processing are more excellent.

  In addition to these annular grooves, the polishing surface can be provided with grooves or recesses having other shapes. Examples of the groove having another shape include linear grooves arranged in the diameter direction of the polishing layer. The grooves on the straight line may be in a lattice state. Furthermore, in addition to these grooves, a through hole penetrating from the polishing surface to the back surface of the polishing layer may be provided.

  The groove width of the groove on the surface of the polishing layer is preferably in the range of 0.05 to 2.0 mm, and more preferably in the range of 0.20 to 0.50 mm. When the groove width is less than 0.05 mm, the slurry is difficult to enter the groove, and the effect as the slurry flow path is reduced, and the polishing rate may be lowered. In addition, a groove width of less than 0.05 mm is very difficult to process and may be inferior in productivity. When the groove width exceeds 2.0 mm, the polishing execution area where the polishing surface of the polishing layer comes into contact with the object to be polished is decreased, and the polishing rate may be lowered. The “polishing rate” is a parameter used for evaluation of polishing characteristics.

  In this invention, it is preferable that the groove pitch which is a space | interval of the groove | channel formed and another groove | channel is 0.1-20 mm. When the groove pitch is less than 0.1 mm, a very large number of grooves are formed on the pad, and the polishing execution area where the polishing surface of the polishing layer contacts the wafer that is the object to be polished is reduced, and the polishing rate is reduced. There is a fear. In addition, when the groove pitch exceeds 20 mm, the area where the polishing surface of the polishing layer and the object to be polished are in contact with each other increases the frictional resistance between the object to be polished and the polishing pad, and the object to be polished is supported. There is a risk of so-called dechucking that comes off the base (polishing head). Here, “groove pitch” refers to the distance of the shortest portion between adjacent grooves. FIG. 2 is also a diagram for explaining the groove width, groove pitch, and groove depth.

  The depth of the groove is preferably 0.5 mm or more in terms of the distance from the polished surface to the deepest part of the groove bottom. When the depth of the groove is less than 0.5 mm, the supply and discharge of the slurry cannot be balanced, which is not preferable for polishing. Even when the depth of the groove is the deepest, it is preferable in view of the strength of the polishing pad that the thickness of the polishing layer having the polishing surface is 0.85 at the maximum.

  The method for forming the groove on the surface of the polishing layer is not particularly limited. For example, a method of mechanical cutting using a jig such as a tool of a predetermined size, and a resin is poured into a mold having a predetermined surface shape and cured. , A method of pressing and forming a resin with a press plate having a predetermined surface shape, a method of forming using photolithography, a method of forming using a printing technique, and laser light using a carbon dioxide laser or the like And the like. As a method for forming the groove, a mechanical cutting method is preferably used.

  Incidentally, a polishing pad formed of a porous material such as foamed polyurethane is generally excellent in polishing properties of a semiconductor device or the like. However, when grooves are formed in these porous materials by cutting or the like, there are many cases in which “holes” or open holes are generated by cutting the hole portions on the inner surfaces such as the side surfaces and the bottom surface of the grooves. The presence of such “thrust” and opening holes on the inner surface of the groove makes it easy for residues of polishing slurry and polishing debris to accumulate and accumulate. These accumulated deposits cause so-called “groove clogging”, resulting in a decrease in polishing rate, generation of scratches, and uneven polishing. Furthermore, such a polishing pad cannot withstand long-time polishing.

  As a method for removing these adverse effects, for example, a method of forming grooves by heat press, embossing, or laser processing can be mentioned. However, the inner surface of the groove formed by these methods is smooth with no flapping or the like, but also has a drawback that it is easily deteriorated by heat or the like. The thermal alteration causes groove bulge, surface hardening, and the like on the polishing layer surface, which can cause scratches. On the other hand, when the polishing layer is formed using a non-foamed material, a groove having a smooth inner surface can be formed by cutting or the like. However, the non-foamed material polishing layer often has poor slurry retention capability. Further, since there is no foaming, there is no escape place for slurry and polishing waste, and many scratches are generated.

  The polishing pad of the present invention has a polishing layer made of a porous material, and the inner surface of the groove on the surface of the polishing layer has a nonporous surface. Note that the inner surface of the groove on the surface of the polishing layer has a nonporous surface means that the inner surface of the groove formed in the polishing layer has pores even though the polishing layer is formed of a porous material. It means a state having a smooth surface. When the inner surface of the groove has a non-porous surface, the center line average roughness (Ra) of the roughness curve of the non-porous surface is more preferably 1.0 to 5.0 μm, and the center of the roughness curve The line average roughness (Ra) is more preferably 1.5 to 3.0 μm. When the center line average roughness (Ra) of the roughness curve exceeds 5.0 μm, the effect of reducing abnormal retention may be inferior. Further, it is difficult to make the center line average roughness (Ra) of the roughness curve of the inner surface of the groove on the polishing layer surface less than 1.0 μm with the current technical level.

  In the polishing pad of the present invention, the polishing surface has a groove, and the inner surface of the groove has such a non-porous surface. Thus, clogging of the grooves resulting from the occurrence of residue and polishing debris can be effectively prevented, and the occurrence of abnormal stagnation of the slurry can be prevented. Thereby, the polishing pad excellent in long-term usability can be created.

  As used herein, the center line average roughness (Ra) of the roughness curve is a parameter defined in JIS B 0601. The center line average roughness (Ra) of the roughness curve is an optical surface roughness measuring instrument such as a three-dimensional surface structure analysis microscope, a scanning laser microscope, or an electron beam surface portable analyzer, a stylus type surface roughness meter, etc. It is possible to measure using a contact type surface roughness measuring instrument. Specific examples of the measuring device include a surface shape measuring device (P-15 manufactured by KLA Tencor). Using such an apparatus, the center line average roughness (Ra) of the roughness curve can be measured in accordance with JIS B 0633.

  As a method of making the inner surface of the groove of the polishing layer a non-porous surface, a method of first forming the groove by cutting or the like and then performing post-processing to process the inner surface of the groove into a non-porous surface is preferable. As post-processing to make the inner surface of the groove a non-porous surface, for example, a method of irradiating the surface portion of the inner surface of the groove with a laser using a laser processing machine and dissolving the resin on the surface portion of the inner surface of the groove A method of leveling, a method of forming a groove again after providing a resin in the groove portion, and the like can be mentioned.

  Examples of the resin that can be used in such post-processing include a resin that can be used for the preparation of the polishing layer. By applying a resin that can be used for preparing the polishing layer to the groove portion without performing the above-described foaming treatment, the inner surface of the groove can be processed into a non-porous surface. As a method of providing these resins in the groove portion, a method of applying a resin melted by heat, a method of preparing a resin solution by dissolving or dispersing a resin in a solvent, and applying or spraying this, a polymerizable resin The method of providing in a groove part by application | coating or spraying, and hardening after that is mentioned.

  The polishing layer of the polishing pad of the present invention is formed of a porous material. Therefore, in the polishing layer, the porous surface is exposed to the polishing surface other than the groove portion, that is, the polishing execution area portion corresponding to the groove pitch portion. That is, this polished surface has a plurality of micropores derived from the porous material.

  As a polishing pad in the present invention, a single-layer polishing pad composed of only a polishing layer, and a laminated polishing pad having at least two layers of a polishing layer and a cushion layer positioned between the polishing layer and a platen (plate) Is mentioned.

  The polishing pad of the present invention is preferably a laminated polishing pad having a polishing layer and a cushion layer. The cushion layer serves to supplement the characteristics of the polishing layer. The presence of the cushion layer makes it possible to achieve both planarity and uniformity that are in a trade-off relationship in CMP. Planarity refers to the flatness of a pattern portion when an object to be polished having minute irregularities generated during pattern formation is polished, and uniformity refers to the uniformity of the entire object to be polished. The planarity is improved by the characteristics of the polishing layer, and the uniformity is improved by the characteristics of the cushion layer.

  The cushion layer preferably has a hardness lower than that of the polishing layer. This is because when the hardness of the cushion layer is lower than the hardness of the polishing layer, the followability of the polishing layer to the entire wafer is improved, and the uniformity of the polishing layer is improved. The hardness of the cushion layer is preferably 20-40 degrees Asker A hardness, more preferably 25-35 degrees.

  The material for forming the cushion layer is not particularly limited. For example, fiber nonwoven fabric such as polyester nonwoven fabric, nylon nonwoven fabric, acrylic nonwoven fabric, resin impregnated nonwoven fabric such as polyester nonwoven fabric impregnated with polyurethane, polyurethane foam, polyethylene foam, etc. Body, butadiene rubber, rubber resin such as isoprene rubber, and photosensitive resin.

  Examples of means for attaching the polishing layer and the cushion layer include a method in which the polishing layer and the cushion layer are sandwiched with a double-sided tape and pressed.

  As the double-sided tape, one having a general configuration in which an adhesive layer is provided on both surfaces of a substrate such as a nonwoven fabric or a film can be used. In consideration of preventing the slurry from penetrating into the cushion layer, it is preferable to use a film for the substrate. Examples of the composition of the adhesive layer include rubber adhesives and acrylic adhesives. Considering the content of metal ions, an acrylic adhesive is preferable because the metal ion content is low. The polishing layer and the cushion layer may have different compositions. In this case, it is also possible to optimize the adhesive strength between the polishing layer and the cushion layer by using a double-sided tape having a different composition on each adhesive layer surface.

  The surface of the semiconductor wafer can be polished by providing the polishing pad thus obtained on the platen. A double-sided tape can be used to provide a polishing pad on the platen. As the double-sided tape, a tape having a general configuration in which an adhesive layer is provided on both surfaces of a base material such as a nonwoven fabric or a film can be used. In consideration of removing the polishing pad from the platen after polishing, it is preferable to use a double-sided tape having a film substrate. This is because the remaining tape or the like can be eliminated. The composition of the adhesive layer of the double-sided tape is the same as described above.

  A semiconductor device can be manufactured through the process of polishing the surface of a semiconductor wafer using the polishing pad of the present invention. A semiconductor wafer is generally a laminate of a wiring metal and an oxide film on a silicon wafer. A method for polishing a semiconductor wafer and a polishing apparatus used therefor are not particularly limited. For example, a polishing surface plate for supporting a polishing pad, a support base (polishing head) for supporting an object to be polished such as a semiconductor wafer, a backing material for uniformly pressing the wafer, and a polishing agent supply mechanism are provided. A polishing apparatus or the like can be used. For example, the polishing pad is attached to the polishing surface plate by pasting with a double-sided tape. The polishing surface plate and the support base are disposed so that the polishing pad and the semiconductor wafer supported by each surface face each other, and each has a rotation shaft. In addition, a pressure mechanism for pressing the semiconductor wafer against the polishing pad is usually provided on the support base side. In polishing, the semiconductor wafer is pressed against the polishing pad while rotating the polishing surface plate and the support base, and polishing is performed while supplying slurry. The flow rate of the slurry, the polishing load, the polishing platen rotation speed, and the wafer rotation speed are not particularly limited and are appropriately adjusted.

  As a result, the protruding portion of the surface of the object to be polished such as a semiconductor wafer is removed and polished flat. Thereafter, a semiconductor device is manufactured by dicing, bonding, packaging, or the like. The semiconductor device is used for an arithmetic processing device, a memory, and the like.

  Examples and the like specifically showing the configuration and effects of the present invention will be described below. The evaluation items in Examples and the like were measured as follows.

The average bubble diameter measurement polishing layer was cut out in parallel with a thickness of about 1 mm using a microtome cutter, and this was used as a sample sample for average bubble diameter measurement. The sample was fixed on a slide glass, and the total bubble diameter in an arbitrary 0.2 mm × 0.2 mm range was measured using an image processing apparatus (Image Analyzer V10, manufactured by Toyobo Co., Ltd.), and the average bubble diameter was calculated.

Specific gravity measurement was performed according to JIS Z8807-1976. A polishing layer cut into a 4 cm × 8.5 cm strip (thickness: arbitrary) was used as a sample for measuring the specific gravity, and was allowed to stand for 16 hours in an environment of a temperature of 23 ° C. ± 2 ° C. and a humidity of 50% ± 5%. The specific gravity was measured using a hydrometer (manufactured by Sartorius).

Asker D hardness measurement was performed according to JIS K6253-1997. A polishing layer cut into a size of 2 cm × 2 cm (thickness: arbitrary) was used as a sample for hardness measurement, and was allowed to stand for 16 hours in an environment of a temperature of 23 ° C. ± 2 ° C. and a humidity of 50% ± 5%. At the time of measurement, the samples were overlapped to a thickness of 6 mm or more. The hardness was measured using a hardness meter (manufactured by Kobunshi Keiki Co., Ltd., Asker D type hardness meter). The hardness was measured at a portion where no groove was formed.

Asker A hardness measurement was performed according to JIS K6253-1997. A material such as a light transmission region (window material region) cut into a size of 2 cm × 2 cm (thickness: arbitrary) is used as a hardness measurement sample, and the temperature is 23 ° C. ± 2 ° C. and the humidity is 50% ± 5% at 16:00. Left undisturbed. At the time of measurement, the samples were overlapped to a thickness of 6 mm or more. The hardness was measured using a hardness meter (manufactured by Kobunshi Keiki Co., Ltd., Asker A type hardness meter).

A polishing layer cut into a circle (thickness: arbitrary) having a compression rate diameter of 7 mm was used as a compression rate measurement sample, and was allowed to stand for 40 hours in an environment of a temperature of 23 ° C. ± 2 ° C. and a humidity of 50% ± 5%. For the measurement, a compression ratio was measured using a thermal analysis measuring instrument TMA (manufactured by SEIKO INSTRUMENTS, SS6000). The compression rate was measured at a portion where no groove was formed. The calculation formula of the compression rate is shown below.

[T1 is the thickness of the polishing layer when a stress load of 30 KPa (300 g / cm ² ) is maintained for 60 seconds from the unloaded state to the polishing layer, and T2 is the stress of 180 KPa (1800 g / cm ² ) from the state of T1. This is the thickness of the polishing layer when the load is held for 60 seconds. ]

Measurement of centerline average roughness (Ra) of roughness curve The bottom surface of the groove portion provided on the polishing surface of the polishing layer was cut out. This test piece was attached to a glass surface plate having a flat surface using wax. Measure the centerline average roughness (Ra) of the roughness curve of the glass plate with the test piece attached using a surface shape measuring device (P-15, manufactured by KLA Tencor) according to JIS B 0633. did. Similarly, four more test pieces were prepared and measured in the same manner. The average value of the five measured values obtained was determined, and this was defined as the centerline average roughness (Ra) of the roughness curve.

Measurement of compression recovery rate A polishing layer cut into a circle (thickness: arbitrary) with a diameter of 7 mm was used as a sample for measurement of compression recovery rate, and was allowed to stand for 40 hours in an environment of temperature 23 ° C. ± 2 ° C. and humidity 50% ± 5%. For the measurement, a thermal analysis measuring instrument TMA (manufactured by SEIKO INSTRUMENTS, SS6000) was used to measure the compression recovery rate. The compression recovery rate was measured at a portion where no groove was formed. The calculation formula of the compression recovery rate is shown below.

[Where:
T1: Material thickness when a stress load of 30 KPa (300 g / cm ² ) is maintained for 60 seconds from an unloaded condition to the material,
T2: Material thickness when holding a stress load of 180 KPa (1800 g / cm ² ) from the state of T1 for 60 seconds,
T3: Material thickness when holding for 30 seconds under the state of no load from T2 and then holding a stress of 30 KPa (3O0 g / cm ² ) for 60 seconds,
It is. ]

Measurement of storage elastic modulus was performed according to JIS K7198-1991. A material such as a polished region cut into a 3 mm × 40 mm strip (thickness; arbitrary) was used as a sample for dynamic viscoelasticity measurement, and was left to stand in a container containing silica gel for 4 days under an environmental condition of 23 ° C. The accurate width and thickness of each sheet after cutting was measured with a micrometer. For measurement, a storage elastic modulus E ′ was measured using a dynamic viscoelastic spectrometer (manufactured by Iwamoto Seisakusho, present IS Engineering Co., Ltd.). The measurement conditions at that time are shown below.
<Measurement conditions>
Measurement temperature: 40 ° C
Applied strain: 0.03%
Initial load: 20g
Frequency: 1Hz

Evaluation of polishing characteristics SPP600S (manufactured by Okamoto Machine Tool Co., Ltd.) was used as a polishing apparatus, and polishing characteristics were evaluated using the prepared polishing pads.

The evaluation of << polishing rate >> was calculated from the time obtained by polishing about 0.5 μm of a 1-μm thermal oxide film formed on an 8-inch silicon wafer. An interference type film thickness measuring device (manufactured by Otsuka Electronics Co., Ltd.) was used for measuring the thickness of the oxide film. As polishing conditions, silica slurry (SS12, manufactured by Cabot) was added as a slurry at a flow rate of 150 ml / min during polishing. The polishing load was 350 g / cm ² , the polishing platen rotation number was 35 rpm, and the wafer rotation number was 30 rpm.

  The evaluation of << uniformity >> was calculated by the following formula from film thickness measurement values at arbitrary 25 points of the wafer after polishing. Note that the smaller the uniformity value, the higher the uniformity of the wafer surface.

  The evaluation of <planarization characteristics> is that a thermal oxide film is deposited on an 8-inch silicon wafer by 0.5 μm, followed by predetermined patterning, and an oxide film is deposited by 1 μm by p-TEOS, and an initial step of 0.5 μm is formed. A patterned wafer was prepared. This wafer was polished under the above conditions, and after polishing, each step was measured to evaluate the planarization characteristics. Two steps were measured as the flattening characteristics. One is a local step, which is a step in a pattern in which lines having a width of 270 μm are arranged in a space of 30 μm, and the step after one minute was measured. The other is the amount of scraping. In the pattern in which lines with a width of 270 μm are arranged in a space of 30 μm and the pattern in which lines with a width of 30 μm are arranged in a space of 270 μm, the level difference between the above two patterns is 2000 mm or less. The amount of scraping of the 270 μm space was measured. When the numerical value of the local step is low, it indicates that the flattening speed in a certain time is high with respect to the unevenness of the oxide film caused by the pattern dependence on the wafer. Further, when the amount of scraping of the space is small, the amount of shaving of a portion that is not desired to be shaved is small and flatness is high.

Example 1
[Preparation of polishing layer]
In a fluorine-coated reaction vessel, 100 parts by weight of a filtered polyether-based prepolymer (Uniroy Corporation, Adiprene L-325, NCO concentration: 2.22 meq / g) and a filtered silicone-based nonionic surfactant (Toray Industries, Inc.) -3 parts by weight of Dow Silicone, SH192) was mixed, and the temperature was adjusted to 80 ° C. Using a fluorine-coated stirring blade, the mixture was vigorously stirred for about 4 minutes so that air bubbles were taken into the reaction system at a rotation speed of 900 rpm. Thereto, 26 parts by weight of 4,4′-methylenebis (o-chloroaniline) (Ihara Chemical amine, manufactured by Ihara Chemical Co., Ltd.) previously melted and filtered at 120 ° C. was added. Thereafter, stirring was continued for about 1 minute, and the reaction solution was poured into a pan-type open mold coated with fluorine. When the fluidity of the reaction solution ceased, it was placed in an oven and post-cured at 110 ° C. for 6 hours to obtain a polyurethane resin foam block. This polyurethane resin foam block was sliced using a band saw type slicer (manufactured by Fecken) to obtain a polyurethane resin foam sheet.

  Next, this sheet was subjected to surface buffing to a predetermined thickness using a buffing machine (manufactured by Amitech Co., Ltd.) to obtain a sheet with adjusted thickness accuracy (sheet thickness: 1.27 mm). The buffed sheet is punched into a predetermined diameter (61 cm), and then a groove processing machine (manufactured by Toho Steel Machine Co., Ltd.) is used to form a groove width of 0.25 mm, a groove pitch of 1.50 mm, and a groove depth of 0.80 mm. The concentric grooves were cut.

  The resin used for the production of the foam sheet was prepared without carrying in and stirring bubbles, and then vacuum degassed to prepare a resin used for post-processing. The resin thus obtained was applied to the groove portion in an uncured state, cured by heat treatment, and then the cured resin portion was cut to form a groove again (post-processing). At this time, care was taken not to cut all the applied resin. In this way, a polishing layer was prepared in which both the side surface and the bottom surface, which are the inner surfaces of the grooves, were non-porous surfaces.

  In addition, the centerline average roughness (Ra) of the roughness curve of the inner surface of the groove before the post-processing was 7 to 20 μm, and Ra after the post-processing was 0.6 to 1.0 μm.

  The physical properties of the produced polishing layer were an average bubble diameter of 45 μm, a specific gravity of 0.86, an Asker D hardness of 53 degrees, a compression rate of 1.0%, a compression recovery rate of 65.0%, and a storage elastic modulus of 275 MPa.

  A double-sided tape (manufactured by Sekisui Chemical Co., Ltd., double tack tape) was applied to the surface opposite to the groove processed surface of this polishing layer sheet to form a polishing layer.

[Production of polishing pad]
A cushioning layer made of polyethylene foam (Toray Industries, Toraypef, thickness: 0.8 mm) buffed and corona-treated is applied to the adhesive surface of the prepared double-sided tape-coated polishing sheet using a laminator. In addition, a polishing pad was produced.

  When the polishing characteristics and the like of the produced polishing pad were measured, the wafer polished with this polishing pad had few scratches and good uniformity. Polishing could be carried out stably over a long period without any abnormal stagnation of the slurry.

Comparative Example 1
[Preparation of polishing layer]
In a fluorine-coated reaction vessel, 100 parts by weight of a filtered polyether-based prepolymer (Uniroy Corporation, Adiprene L-325, NCO concentration: 2.22 meq / g) and a filtered silicone-based nonionic surfactant (Toray Industries, Inc.) -3 parts by weight of Dow Silicone, SH192) was mixed, and the temperature was adjusted to 80 ° C. Using a fluorine-coated stirring blade, the mixture was vigorously stirred for about 4 minutes so that air bubbles were taken into the reaction system at a rotation speed of 900 rpm. Thereto, 26 parts by weight of 4,4′-methylenebis (o-chloroaniline) (Ihara Chemical amine, manufactured by Ihara Chemical Co., Ltd.) previously melted and filtered at 120 ° C. was added. Thereafter, stirring was continued for about 1 minute, and the reaction solution was poured into a pan-type open mold coated with fluorine. When the reaction solution lost its fluidity, it was placed in an oven and post-cured at 110 ° C. for 6 hours to obtain a polyurethane resin foam block. This polyurethane resin foam block was sliced using a band saw type slicer (manufactured by Fecken) to obtain a polyurethane resin foam sheet.

Next, this sheet was subjected to surface buffing to a predetermined thickness using a buffing machine (Amitech Co., Ltd.) to obtain a sheet with adjusted thickness accuracy (sheet thickness: 1.27 mm). This buffed sheet is punched into a predetermined diameter (61 cm), and a groove processing machine (manufactured by Toho Steel Co., Ltd.) is used to make a groove width of 0.25 mm, groove pitch of 1.50 mm, and groove depth of 0.80 mm. A concentric groove cutting was performed to prepare a polishing layer sheet having a grooved polished surface.
The surface roughness of both the side surface and the bottom surface, which is the inner surface of this grooved groove, was 7 to 20 μm before post-processing.

  The physical properties of the produced polishing layer were an average bubble diameter of 45 μm, a specific gravity of 0.86, an Asker D hardness of 53 degrees, a compression rate of 1.0%, a compression recovery rate of 65.0%, and a storage elastic modulus of 275 MPa.

  A double-sided tape (manufactured by Sekisui Chemical Co., Ltd., double tack tape) was applied to the surface opposite to the groove processed surface of this polishing layer sheet to form a polishing layer.

[Production of polishing pad]
A cushioning layer made of polyethylene foam (Toray Industries, Toraypef, thickness: 0.8 mm) buffed and corona-treated is applied to the adhesive surface of the prepared double-sided tape-coated polishing sheet using a laminator. Combined. Further, a double-sided tape was bonded to the cushion layer surface to prepare a polishing pad.

  When the polishing characteristics and the like of the manufactured polishing pad were measured, the wafer polished with this polishing pad was scratched after 15 hours of use, and abnormal retention of polishing debris and slurry in the groove was observed.

  By using the polishing pad of the present invention for polishing an object to be polished such as a semiconductor wafer, the polishing rate can be maintained within a preferable range, and the in-plane polishing uniformity of the object to be polished can be improved. Further, by using the polishing pad of the present invention, occurrence of abnormal stagnation of the slurry can be suppressed. The polishing pad of the present invention is useful for the production of semiconductor devices.

It is explanatory drawing of the grinding | polishing apparatus generally used by CMP. It is explanatory drawing of the groove | channel whose cross-sectional shape is a rectangular shape.

Explanation of symbols

1 ... polishing pad,
2 ... Polishing surface plate,
3 ... polishing slurry,
4 ... objects to be polished,
5 ... support stand,
6, 7 ... rotating shaft,
8: Supply mechanism.

Claims (9)

A polishing pad having a polishing layer,
The polishing layer is formed from a porous material;
The polishing surface of the polishing layer has grooves, and at least a portion of the inner surface of the grooves has a non-porous surface;
Polishing pad.   The polishing pad according to claim 1, wherein the non-porous surface has a center line average roughness (Ra) of a roughness curve of 1.0 to 5.0 μm.   The polishing pad according to claim 1 or 2, wherein the groove on the polishing surface of the polishing layer has a groove depth of 0.5 to 1.5 mm.   The polishing pad according to any one of claims 1 to 3, wherein the polishing layer is formed of a porous material having bubbles having an average bubble diameter of 20 to 70 µm.   The polishing pad in any one of Claims 1-4 whose specific gravity of a polishing layer is 0.5-1.0.   The polishing pad according to any one of claims 1 to 5, wherein the compressibility of the polishing layer is 0.5 to 5.0%.   The polishing pad according to any one of claims 1 to 6, wherein the polishing layer has an Asker D hardness of 45 to 65 degrees. A polishing pad comprising the polishing layer according to claim 1 and a cushion layer,
A polishing pad, wherein the hardness of the cushion layer is lower than the hardness of the polishing layer. The manufacturing method of a semiconductor device including the process of grind | polishing the surface of a semiconductor wafer using the polishing pad in any one of Claims 1-8.

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