JP2007181907A - Laminated polishing pad - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a laminated polishing pad which is difficult to peel between a polishing layer and a cushion layer. It is another object of the present invention to provide a method for manufacturing a semiconductor device using the laminated polishing pad.
A laminated polishing pad in which a polishing layer and a cushion layer are laminated via a double-sided tape, wherein the base material of the double-sided tape is formed of a hydrophobic resin.
[Selection figure] None

Description

  The present invention stabilizes flattening processing of optical materials such as lenses and reflecting mirrors, silicon wafers, glass substrates for hard disks, aluminum substrates, and materials that require high surface flatness such as general metal polishing processing, The present invention also relates to a laminated polishing pad that can be performed with high polishing efficiency. The laminated polishing pad of the present invention is particularly suitable for a step of planarizing a silicon wafer and a device having an oxide layer, a metal layer, etc. formed thereon, before further laminating and forming these oxide layers and metal layers. Preferably used.

  When manufacturing a semiconductor device, a step of forming a conductive layer on the wafer surface and forming a wiring layer by photolithography, etching, or the like, or a step of forming an interlayer insulating film on the wiring layer These steps cause irregularities made of a conductor such as metal or an insulator on the wafer surface. In recent years, miniaturization of wiring and multilayer wiring have been advanced for the purpose of increasing the density of semiconductor integrated circuits, and along with this, technology for flattening the irregularities on the wafer surface has become important.

  As a method for flattening the irregularities on the wafer surface, chemical mechanical polishing (hereinafter referred to as CMP) is generally employed. CMP is a technique of polishing using a slurry-like abrasive (hereinafter referred to as slurry) in which abrasive grains are dispersed in a state where the surface to be polished of a wafer is pressed against the polishing surface of a polishing pad. As shown in FIG. 1, for example, a polishing apparatus generally used in CMP includes a polishing surface plate 2 that supports a polishing pad 1 and a support base (polishing head) 5 that supports a material to be polished (semiconductor wafer) 4. And a backing material for uniformly pressing the wafer, and an abrasive supply mechanism. The polishing pad 1 is attached to the polishing surface plate 2 by attaching it with a double-sided tape, for example. The polishing surface plate 2 and the support base 5 are disposed so that the polishing pad 1 and the material to be polished 4 supported by each of the polishing surface plate 2 and the support base 5 are opposed to each other, and are provided with rotating shafts 6 and 7 respectively. Further, a pressurizing mechanism for pressing the workpiece 4 against the polishing pad 1 is provided on the support base 5 side.

  Conventionally, as a polishing pad used for high-precision polishing, a polyurethane resin foam sheet is generally used. However, although the polyurethane resin foam sheet is excellent in local flattening ability, it is difficult to apply a uniform pressure to the entire wafer surface because of insufficient cushioning properties. For this reason, usually, a soft cushion layer is separately provided on the back surface of the polyurethane resin foam sheet, and is used for polishing as a laminated polishing pad. For example, the following polishing pads have been developed.

  A polishing pad is disclosed in which a relatively hard first layer and a relatively soft second layer are laminated, and a groove having a predetermined pitch or a protrusion having a predetermined shape is provided on the polishing surface of the first layer. (Patent Document 1).

  Also, a first sheet-like member having elasticity and having irregularities formed on the surface, and a surface that is provided on the surface of the first sheet-like member on which the irregularities are formed and that faces the surface to be polished of the substrate to be processed. An abrasive cloth having a second sheet-like portion is disclosed (Patent Document 2).

  Further, a polishing pad is disclosed that includes a polishing layer and a support layer that is laminated on one surface of the polishing layer and is a foam having a larger compressibility than the polishing layer (Patent Document 3).

  Further, a polishing pad is disclosed in which a polishing layer and a cushion layer are bonded with a double-separated double-sided tape (Patent Documents 4 and 5).

  However, in the above conventional laminated polishing pad, the polishing layer and the cushion layer are generally bonded with a double-sided tape (cellulosic nonwoven fabric + adhesive layer), but the slurry enters between the polishing layer and the cushion layer during polishing. As a result, the durability of the double-sided tape is lowered, and as a result, the polishing layer and the cushion layer are easily peeled off.

JP 2003-53657 A JP-A-10-329005 JP 2004-25407 A JP 2004-140215 A JP 2004-193390 A

  An object of the present invention is to provide a laminated polishing pad that hardly peels between a polishing layer and a cushion layer. It is another object of the present invention to provide a method for manufacturing a semiconductor device using the laminated polishing pad.

  As a result of intensive studies to solve the above problems, the present inventors have found that the above object can be achieved by the laminated polishing pad shown below, and have completed the present invention.

  That is, the present invention provides a laminated polishing pad in which a polishing layer and a cushion layer are laminated via a double-sided tape, wherein the base material of the double-sided tape is formed of a hydrophobic resin. , Regarding.

  The present inventors have improved the durability of the double-sided tape against the slurry by using a double-sided tape whose base material is formed of a hydrophobic resin, and a laminated polishing pad that is difficult to peel between the polishing layer and the cushion layer. It was found that can be obtained.

In the present invention, the hydrophobic resin refers to a resin whose weight increase rate is 5% or less when the resin (base material) is immersed in water at 25 ° C. for 24 hours. The weight increase rate is a value calculated by the following formula.
Weight increase rate (%) = [(weight after immersion−weight before immersion) / weight before immersion] × 100

  In the present invention, it is preferable to use a hydrophobic resin having a weight increase rate of 4% or less, and examples of the hydrophobic resin include polyester resins and polypropylene resins. These resins have a very small weight increase rate, and when these resins are used as the base material, the slurry is less likely to penetrate into the base material, and the durability of the double-sided tape becomes more excellent. As a result, even when used for a long time, peeling does not occur between the polishing layer and the cushion layer, and the life characteristics of the laminated polishing pad are improved.

  The substrate is preferably a nonwoven fabric. By using a nonwoven fabric as the base material, the followability of the adhesive layer to the adhesive surface is improved. As a result, the slurry is less likely to enter the interface between the polishing layer and the adhesive layer and between the cushion layer and the adhesive layer, and peeling at these interfaces can be prevented.

  In the laminated polishing pad of the present invention, the peel strength between the polishing layer and the double-sided tape and the peel strength between the cushion layer and the double-sided tape are both preferably 300 g / cm or more, more preferably 500 g / cm or more.

  The present invention also relates to a semiconductor device manufacturing method including a step of polishing a surface of a semiconductor wafer using the polishing pad.

  The polishing layer in the present invention is not particularly limited as long as it is a foam having fine bubbles. For example, halogen resins such as polyurethane resin, polyester resin, polyamide resin, acrylic resin, polycarbonate resin (polyvinyl chloride, polytetrafluoroethylene, polyvinylidene fluoride, etc.), polystyrene, olefin resin (polyethylene, polypropylene, etc.) 1 type, or 2 or more types of mixtures, such as an epoxy resin and a photosensitive resin. Polyurethane resin is a particularly preferable material for forming the polishing layer because it has excellent wear resistance and a polymer having desired physical properties can be easily obtained by variously changing the raw material composition. Hereinafter, the polyurethane resin will be described on behalf of the foam.

  The polyurethane resin comprises an isocyanate component, a polyol component (high molecular weight polyol, low molecular weight polyol), and a chain extender.

  As the isocyanate component, a known compound in the field of polyurethane can be used without particular limitation. As the isocyanate component, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 2,2′-diphenylmethane diisocyanate, 2,4′-diphenylmethane diisocyanate, 4,4′-diphenylmethane diisocyanate, 1,5-naphthalene diisocyanate, aromatic diisocyanates such as p-phenylene diisocyanate, m-phenylene diisocyanate, p-xylylene diisocyanate, m-xylylene diisocyanate; ethylene diisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, 1,6-hexamethylene diisocyanate, etc. Aliphatic diisocyanate; 1,4-cyclohexane diisocyanate, 4,4′-dicyclohexylmethane diisocyanate, isophorone diisocyanate Isocyanate, alicyclic diisocyanates such as norbornane diisocyanate. These may be used alone or in combination of two or more.

  As the isocyanate component, a trifunctional or higher polyfunctional polyisocyanate compound can be used in addition to the diisocyanate compound. As a polyfunctional isocyanate compound, a series of diisocyanate adduct compounds are commercially available as Desmodur-N (manufactured by Bayer) or trade name Duranate (manufactured by Asahi Kasei Kogyo Co., Ltd.).

  Of the above isocyanate components, it is preferable to use an aromatic diisocyanate and an alicyclic diisocyanate in combination, and it is particularly preferable to use toluene diisocyanate and dicyclohexylmethane diisocyanate in combination.

  Examples of the high molecular weight polyol include polyether polyols typified by polytetramethylene ether glycol, polyester polyols typified by polybutylene adipate, polycaprolactone polyol, and a reaction product of a polyester glycol such as polycaprolactone and alkylene carbonate. Polyester polycarbonate polyol, polyester polycarbonate polyol obtained by reacting ethylene carbonate with polyhydric alcohol and then reacting the resulting reaction mixture with organic dicarboxylic acid, and polycarbonate polyol obtained by transesterification reaction between polyhydroxyl compound and aryl carbonate Etc. These may be used alone or in combination of two or more.

  The number average molecular weight of the high molecular weight polyol is not particularly limited, but is preferably 500 to 2000 from the viewpoint of the elastic properties of the resulting polyurethane resin. When the number average molecular weight is less than 500, a polyurethane resin using the number average molecular weight does not have sufficient elastic properties and becomes a brittle polymer. Therefore, the polishing pad manufactured from this polyurethane resin becomes too hard and causes scratches on the wafer surface. Moreover, since it becomes easy to wear, it is not preferable from the viewpoint of the pad life. On the other hand, when the number average molecular weight exceeds 2000, a polyurethane resin using the number average molecular weight becomes too soft, and a polishing pad produced from this polyurethane resin tends to have poor planarization characteristics.

  In addition to the above-described high molecular weight polyol as a polyol component, ethylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 1,4-butanediol, 1,6-hexanediol, neopentyl glycol, 1,4 -Cyclohexanedimethanol, 3-methyl-1,5-pentanediol, diethylene glycol, triethylene glycol, 1,4-bis (2-hydroxyethoxy) benzene, trimethylolpropane, glycerin, 1,2,6-hexanetriol, Low such as pentaerythritol, tetramethylolcyclohexane, methyl glucoside, sorbitol, mannitol, dulcitol, sucrose, 2,2,6,6-tetrakis (hydroxymethyl) cyclohexanol, and triethanolamine It can be used in combination with molecular weight polyols. Moreover, low molecular weight polyamines, such as ethylenediamine, tolylenediamine, diphenylmethanediamine, and diethylenetriamine, can also be used in combination. These low molecular weight polyols and low molecular weight polyamines may be used alone or in combination of two or more. The blending amount of the low molecular weight polyol and the low molecular weight polyamine is not particularly limited and is appropriately determined depending on the properties required for the polishing pad, but is preferably 20 to 70 mol% of the total polyol component.

  When a polyurethane resin foam is produced by a prepolymer method, a chain extender is used for curing the prepolymer. The chain extender is an organic compound having at least two active hydrogen groups, and examples of the active hydrogen group include a hydroxyl group, a primary or secondary amino group, and a thiol group (SH). Specifically, 4,4′-methylenebis (o-chloroaniline) (MOCA), 2,6-dichloro-p-phenylenediamine, 4,4′-methylenebis (2,3-dichloroaniline), 3,5 -Bis (methylthio) -2,4-toluenediamine, 3,5-bis (methylthio) -2,6-toluenediamine, 3,5-diethyltoluene-2,4-diamine, 3,5-diethyltoluene-2 , 6-diamine, trimethylene glycol-di-p-aminobenzoate, polytetramethylene oxide-di-p-aminobenzoate, 4,4′-diamino-3,3 ′, 5,5′-tetraethyldiphenylmethane, 4, 4'-diamino-3,3'-diisopropyl-5,5'-dimethyldiphenylmethane, 4,4'-diamino-3,3 ', 5,5'-tetra Sopropyldiphenylmethane, 1,2-bis (2-aminophenylthio) ethane, 4,4′-diamino-3,3′-diethyl-5,5′-dimethyldiphenylmethane, N, N′-di-sec-butyl -4,4'-diaminodiphenylmethane, 3,3'-diethyl-4,4'-diaminodiphenylmethane, m-xylylenediamine, N, N'-di-sec-butyl-p-phenylenediamine, m-phenylenediamine And polyamines exemplified by p-xylylenediamine and the like, or the low molecular weight polyols and low molecular weight polyamines mentioned above. These may be used alone or in combination of two or more.

  The ratio of the isocyanate component, the polyol component, and the chain extender in the present invention can be variously changed depending on the molecular weight of each, the desired physical properties of the polishing pad, and the like. In order to obtain a polishing pad having desired polishing characteristics, the number of isocyanate groups of the isocyanate component relative to the total number of active hydrogen groups (hydroxyl group + amino group) of the polyol component and the chain extender is 0.80 to 1.20. Is more preferable, and 0.99 to 1.15 is more preferable. When the number of isocyanate groups is outside the above range, curing failure occurs and the required specific gravity and hardness cannot be obtained, and the polishing characteristics tend to be deteriorated.

  The polyurethane resin foam can be produced by applying a known urethanization technique such as a melting method or a solution method, but is preferably produced by a melting method in consideration of cost, work environment, and the like.

  The polyurethane resin foam can be produced by either the prepolymer method or the one-shot method. However, an isocyanate-terminated prepolymer is synthesized beforehand from an isocyanate component and a polyol component, and this is reacted with a chain extender. The polymer method is preferred because the resulting polyurethane resin has excellent physical properties.

  As the isocyanate-terminated prepolymer, those having a molecular weight of about 800 to 5000 are preferable because of excellent processability and physical characteristics.

  In the production of the polyurethane resin foam, a first component containing an isocyanate group-containing compound and a second component containing an active hydrogen group-containing compound are mixed and cured. In the prepolymer method, the isocyanate-terminated prepolymer becomes an isocyanate group-containing compound, and the chain extender becomes an active hydrogen group-containing compound. In the one-shot method, the isocyanate component becomes an isocyanate group-containing compound, and the chain extender and the polyol component become active hydrogen group-containing compounds.

  Examples of the method for producing a polyurethane resin foam include a method of adding hollow beads, a mechanical foaming method, and a chemical foaming method.

  In particular, a mechanical foaming method using a silicone surfactant which is a copolymer of polyalkylsiloxane and polyether and does not have an active hydrogen group is preferable. Examples of suitable silicon surfactants include SH-192 (manufactured by Toray Dow Corning Silicon), L-5340 (manufactured by Nippon Unica), and the like.

  In addition, you may add stabilizers, such as antioxidant, a lubricant, a pigment, a filler, an antistatic agent, and another additive as needed.

An example of a method for producing a microbubble type polyurethane resin foam will be described below. The manufacturing method of this polyurethane resin foam has the following processes.
1) Foaming process for producing a cell dispersion of isocyanate-terminated prepolymer A silicon-based surfactant is added to the isocyanate-terminated prepolymer (first component), and the mixture is stirred in the presence of a non-reactive gas to remove the non-reactive gas. Disperse as fine bubbles to obtain a cell dispersion. When the prepolymer is solid at normal temperature, it is preheated to an appropriate temperature and melted before use.
2) Curing Agent (Chain Extender) Mixing Step A chain extender (second component) is added to the above cell dispersion, mixed and stirred to obtain a foaming reaction solution.
3) Casting process The above foaming reaction liquid is poured into a mold.
4) Curing process The foaming reaction liquid poured into the mold is heated and reacted and cured.

  As the non-reactive gas used to form the fine bubbles, non-flammable gases are preferable, and specific examples include nitrogen, oxygen, carbon dioxide, rare gases such as helium and argon, and mixed gases thereof. In view of cost, it is most preferable to use air that has been dried to remove moisture.

  A known stirring device can be used without particular limitation as a stirring device for dispersing non-reactive gas in the form of fine bubbles and dispersed in the first component containing the silicon-based surfactant. Specifically, a homogenizer, a dissolver, 2 A shaft planetary mixer (planetary mixer) is exemplified. The shape of the stirring blade of the stirring device is not particularly limited, but it is preferable to use a whipper type stirring blade because fine bubbles can be obtained.

  In addition, it is also a preferable aspect to use a different stirring apparatus for the stirring which produces a cell dispersion in a foaming process, and the stirring which adds and mixes the chain extender in a mixing process. In particular, the stirring in the mixing step may not be stirring that forms bubbles, and it is preferable to use a stirring device that does not involve large bubbles. As such an agitator, a planetary mixer is suitable. There is no problem even if the same stirring device is used as the stirring device for the foaming step and the mixing step, and it is also preferable to adjust the stirring conditions such as adjusting the rotation speed of the stirring blade as necessary. .

  In the method for producing a polyurethane resin foam, heating and post-curing the foam that has reacted until the foaming reaction liquid is poured into the mold and no longer flows has the effect of improving the physical properties of the foam. Is preferred. The foam reaction solution may be poured into the mold and immediately put into a heating oven for post cure, and heat is not immediately transferred to the reaction components under such conditions, so the bubble size does not increase. . The curing reaction is preferably performed at normal pressure because the bubble shape is stable.

  In the polyurethane resin foam, a known catalyst that promotes a polyurethane reaction such as tertiary amine may be used. The type and addition amount of the catalyst are selected in consideration of the flow time for pouring into a mold having a predetermined shape after the mixing step.

  Polyurethane resin foam can be manufactured by batch feeding each component into a container and stirring, or by continuously supplying each component and non-reactive gas to the stirring device and stirring, It may be a continuous production method in which a dispersion is sent out to produce a molded product.

  In addition, the prepolymer that is the raw material of the polyurethane resin foam is placed in a reaction vessel, and then a chain extender is added and stirred, and then poured into a casting mold of a predetermined size to produce a block, and the block is shaped like a bowl or a band saw. In the method of slicing using a slicer, or in the above-described casting step, a thin sheet may be used. Alternatively, a raw material resin may be dissolved and extruded from a T-die to directly obtain a sheet-like polyurethane resin foam.

  The average cell diameter of the polyurethane resin foam is preferably 30 to 80 μm, more preferably 30 to 60 μm. When deviating from this range, the polishing rate tends to decrease, or the planarity of the polished material (wafer) after polishing tends to decrease.

  The specific gravity of the polyurethane resin foam is preferably 0.5 to 1.3. When the specific gravity is less than 0.5, the surface strength of the polishing layer decreases, and the planarity of the material to be polished tends to decrease. On the other hand, when the ratio is larger than 1.3, the number of bubbles on the surface of the polishing layer is reduced and planarity is good, but the polishing rate tends to decrease.

  The hardness of the polyurethane resin foam is preferably 45 to 70 degrees as measured by an Asker D hardness meter. When the Asker D hardness is less than 45 degrees, the planarity of the material to be polished is lowered. When the Asker D hardness is more than 70 degrees, the planarity is good but the uniformity of the material to be polished is lowered. There is a tendency.

  The polishing surface of the polishing layer that comes into contact with the material to be polished preferably has an uneven structure for holding and renewing the slurry. The polishing layer made of foam has many openings on the polishing surface and has the function of holding and updating the slurry. By forming a concavo-convex structure on the polishing surface, the slurry can be held and updated more efficiently. It can be performed well, and destruction of the material to be polished due to adsorption with the material to be polished can be prevented. The concavo-convex structure is not particularly limited as long as it is a shape that holds and renews the slurry. For example, an XY lattice groove, a concentric circular groove, a through hole, a non-penetrating hole, a polygonal column, a cylinder, a spiral groove, Examples include eccentric circular grooves, radial grooves, and combinations of these grooves. In addition, these uneven structures are generally regular, but in order to make the slurry retention and renewability desirable, the groove pitch, groove width, groove depth, etc. should be changed for each range. Is also possible.

  The method for producing the concavo-convex structure is not particularly limited. For example, a method of machine cutting using a jig such as a tool of a predetermined size, pouring a resin into a mold having a predetermined surface shape, and curing. Using a press plate having a predetermined surface shape, a method of producing a resin by pressing, a method of producing using photolithography, a method of producing using a printing technique, a carbon dioxide laser, etc. Examples include a manufacturing method using laser light.

  The thickness of the polishing layer is not particularly limited, but is usually about 0.8 to 4 mm, and preferably 1.5 to 2.5 mm. As a method for producing the polishing layer having the above thickness, a method in which the block of the fine foam is made to have a predetermined thickness using a band saw type or canna type slicer, a resin is poured into a mold having a cavity having a predetermined thickness, and curing is performed. And a method using a coating technique or a sheet forming technique.

  The thickness variation of the polishing layer is preferably 100 μm or less. When the thickness variation exceeds 100 μm, the polishing layer has a large waviness, and there are portions where the contact state with the material to be polished is different, which adversely affects the polishing characteristics. In order to eliminate the thickness variation of the polishing layer, in general, the surface of the polishing layer is dressed with a dresser in which diamond abrasive grains are electrodeposited and fused in the initial stage of polishing. As a result, the dressing time becomes longer and the production efficiency is lowered.

  Examples of a method for suppressing the variation in the thickness of the polishing layer include a method of buffing the surface of the polishing sheet sliced to a predetermined thickness. Moreover, when buffing, it is preferable to carry out stepwise with abrasives having different particle sizes.

  The laminated polishing pad of the present invention is produced by bonding the polishing layer and the cushion layer with a double-sided tape.

  The cushion layer supplements the characteristics of the polishing layer. The cushion layer is necessary in order to achieve both planarity and uniformity in a trade-off relationship in CMP. Planarity refers to the flatness of a pattern portion when a material having fine irregularities generated during pattern formation is polished, and uniformity refers to the uniformity of the entire material to be polished. The planarity is improved by the characteristics of the polishing layer, and the uniformity is improved by the characteristics of the cushion layer. In the laminated polishing pad of the present invention, the cushion layer is preferably softer than the polishing layer.

  Examples of the cushion layer include fiber nonwoven fabrics such as polyester nonwoven fabric, nylon nonwoven fabric, and acrylic nonwoven fabric; resin-impregnated nonwoven fabrics such as polyester nonwoven fabric impregnated with polyurethane; polymer resin foams such as polyurethane foam and polyethylene foam; polyester films Resin films such as polypropylene film, nylon film, and polyethylene naphthalate film; rubber resins such as butadiene rubber and isoprene rubber; and photosensitive resins.

  In this invention, the double-sided tape which provided the contact bonding layer on both surfaces of the base material formed with hydrophobic resin is used. Examples of the hydrophobic resin include polyester resin, polypropylene resin, and polyethylene resin, and it is particularly preferable to use polyester resin or polypropylene resin. The form of the substrate is not particularly limited and may be a non-woven fabric or a film, but is preferably a non-woven fabric in consideration of the ability to follow the adhesive surface of the adhesive layer. Although the thickness in particular of a base material is not restrict | limited, About 10-300 micrometers, Preferably it is 20-100 micrometers. Examples of the composition of the adhesive layer include rubber adhesives and acrylic adhesives. Considering the content of metal ions, an acrylic adhesive is preferable because the metal ion content is low. In addition, since the composition of the polishing layer and the cushion layer may be different, the composition of each adhesive layer of the double-sided tape can be made different so that the adhesive force of each layer can be optimized. The thickness of the adhesive layer is not particularly limited, but is preferably about 30 to 120 μm in view of durability, adhesive strength, and the like.

  The laminated polishing pad of the present invention may be provided with a double-sided tape on the surface to be bonded to the platen. As the double-sided tape, one having an adhesive layer on both sides of a substrate can be used as described above. In consideration of peeling from the platen after use of the polishing pad, it is preferable to use a film for the substrate.

  The semiconductor device is manufactured through a step of polishing the surface of the semiconductor wafer using the polishing pad. A semiconductor wafer is generally a laminate of a wiring metal and an oxide film on a silicon wafer. The method and apparatus for polishing the semiconductor wafer are not particularly limited. For example, as shown in FIG. 1, a polishing surface plate 2 that supports a polishing pad (polishing layer) 1 and a support table (polishing head) that supports the semiconductor wafer 4. 5 and a polishing apparatus equipped with a backing material for uniformly pressing the wafer and a supply mechanism of the abrasive 3. The laminated polishing pad 1 is attached to the polishing surface plate 2 by attaching it with a double-sided tape, for example. The polishing surface plate 2 and the support base 5 are arranged so that the laminated polishing pad 1 and the semiconductor wafer 4 supported on each of the polishing surface plate 2 and the support table 5 face each other, and are provided with rotating shafts 6 and 7 respectively. Further, a pressure mechanism for pressing the semiconductor wafer 4 against the laminated polishing pad 1 is provided on the support base 5 side. In polishing, the semiconductor wafer 4 is pressed against the laminated polishing pad 1 while rotating the polishing surface plate 2 and the support base 5, and polishing is performed while supplying slurry. The flow rate of the slurry, the polishing load, the polishing platen rotation speed, and the wafer rotation speed are not particularly limited and are appropriately adjusted.

  As a result, the protruding portion of the surface of the semiconductor wafer 4 is removed and polished flat. Thereafter, a semiconductor device is manufactured by dicing, bonding, packaging, or the like. The semiconductor device is used for an arithmetic processing device, a memory, and the like.

  Hereinafter, the present invention will be described with reference to examples, but the present invention is not limited to these examples.

[Measurement and evaluation methods]
(Measurement of number average molecular weight)
The number average molecular weight was measured by GPC (gel permeation chromatography) and converted by standard polystyrene.
GPC device: manufactured by Shimadzu Corporation, LC-10A
Column: Polymer Laboratories, (PLgel, 5 μm, 500 mm), (PLgel, 5 μm, 100 mm), and (PLgel, 5 μm, 50 mm) connected to three columns, flow rate: 1.0 ml / min
Concentration: 1.0 g / l
Injection volume: 40 μl
Column temperature: 40 ° C
Eluent: Tetrahydrofuran

(Measurement of weight increase rate)
The base material (thickness: 130 μm, length: 50 mm, width: 50 mm) of the double-sided tape to be used was immersed in water at 25 ° C. for 24 hours, and the weight increase rate was calculated from the weight before and after the immersion.
Weight increase rate (%) = [(weight after immersion−weight before immersion) / weight before immersion] × 100

(Measurement of peel strength)
A 25 mm wide double-sided tape was bonded to a stainless steel plate at a pressure of 0.8 kgf / cm ² . Thereafter, the double-sided tape was peeled off at an angle of 90 ° with respect to the stainless steel plate and a peeling speed of 300 mm / min, and the peel strength (g / cm) at this time was measured.

(Average bubble diameter measurement)
A sample obtained by cutting the produced polyurethane resin foam in parallel with a microtome cutter as thin as possible to a thickness of 1 mm or less was used as a sample for measuring the average cell diameter. The sample was fixed on a slide glass and observed at 100 times using SEM (S-3500N, Hitachi Science Systems, Ltd.). Using the image analysis software (WinRoof, Mitani Shoji Co., Ltd.) for the obtained image, the total bubble diameter in an arbitrary range was measured, and the average bubble diameter was calculated.

(Specific gravity measurement)
This was performed according to JIS Z8807-1976. The produced polyurethane resin foam was cut into a 4 cm × 8.5 cm strip (thickness: arbitrary) and used as a sample for measuring specific gravity, and allowed to stand for 16 hours in an environment of temperature 23 ° C. ± 2 ° C. and humidity 50% ± 5%. I put it. The specific gravity was measured using a hydrometer (manufactured by Sartorius).

(Hardness measurement)
This was performed in accordance with JIS K6253-1997. The produced polyurethane resin foam was cut into a size of 2 cm × 2 cm (thickness: arbitrary) and used as a sample for hardness measurement, and was allowed to stand for 16 hours in an environment of temperature 23 ° C. ± 2 ° C. and humidity 50% ± 5%. . At the time of measurement, the samples were overlapped to a thickness of 6 mm or more. The hardness was measured using a hardness meter (manufactured by Kobunshi Keiki Co., Ltd., Asker D type hardness meter).

(Evaluation of peel resistance)
The peel resistance was evaluated using the produced laminated polishing pad. Using an SPP600S (Okamoto Machine Tool Co., Ltd.) as a polishing device, a sample of 1 μm of thermal oxide film formed on an 8-inch silicon wafer is polished by about 0.5 μm, and the polishing layer or cushion layer is peeled off from the double-sided tape. The number of samples until measurement was measured. As polishing conditions, silica slurry (SS12, manufactured by Cabot Corporation) was added at a flow rate of 150 ml / min during polishing, and the polishing load was 350 g / cm ² , the polishing platen rotating speed was 35 rpm, and the wafer rotating speed was 30 rpm.

Example 1
In a container, 1229 parts by weight of toluene diisocyanate (mixture of 2,4-isomer / 2,6-isomer = 80/20), 272 parts by weight of 4,4′-dicyclohexylmethane diisocyanate, polytetramethylene ether glycol 1901 having a number average molecular weight of 1018 Part by weight and 198 parts by weight of diethylene glycol were added and reacted at 70 ° C. for 4 hours to obtain an isocyanate-terminated prepolymer.
100 parts by weight of the prepolymer and 3 parts by weight of a silicon-based surfactant (manufactured by Toray Dow Corning Silicon, SH-192) were added to the polymerization vessel, mixed, adjusted to 80 ° C. and degassed under reduced pressure. Then, it stirred vigorously for about 4 minutes so that a bubble might be taken in in a reaction system with the rotation speed of 900 rpm using the stirring blade. Etacure 300 (Albemarle, 3,5-bis (methylthio) -2,6-toluenediamine and 3,5-bis (methylthio) -2,4-toluenediamine mixed in advance with a temperature adjusted to 70 ° C. ) 21 parts by weight were added. The mixed solution was stirred for about 1 minute and then poured into a pan-shaped open mold (casting container). When the fluidity of the mixed solution disappeared, it was placed in an oven and post-cured at 100 ° C. for 16 hours to obtain a polyurethane resin foam block.
The polyurethane resin foam block heated to about 80 ° C. was sliced using a slicer (AGW), VGW-125, and a polyurethane resin foam sheet (average cell diameter: 50 μm, specific gravity: 0.86, hardness: 52 degrees). Next, using a buffing machine (Amitech Co., Ltd.), the surface of the sheet was buffed to a thickness of 1.27 mm to obtain a sheet with an adjusted thickness accuracy. The buffed sheet is punched out with a diameter of 61 cm, and a concentric circle having a groove width of 0.25 mm, a groove pitch of 1.50 mm, and a groove depth of 0.40 mm on the surface using a groove processing machine (manufactured by Techno). Groove processing was performed to obtain an abrasive sheet. Using a laminator on the surface opposite to the groove processed surface of this polishing sheet, double-sided tape (manufactured by Sekisui Chemical Co., Ltd., # 5782PGW, substrate: polyester nonwoven fabric, adhesive layer: acrylic adhesive, thickness 60 μm) ). The weight increase rate of the base material was 4%, and the peel strength of the double-sided tape was 700 g / cm.
Furthermore, the surface of the corona-treated cushion sheet (manufactured by Toray Industries, Inc., polyethylene foam, Torepef, thickness 0.8 mm) was buffed and bonded to the double-sided tape using a laminator. Further, the double-sided tape was bonded to the other surface of the cushion sheet using a laminator to prepare a laminated polishing pad.
When the peel resistance was evaluated using the laminated polishing pad, the polishing layer and the cushion layer did not peel even when 1300 or more samples were polished.

Comparative Example 1
Example 1 except that # 5782 (manufactured by Sekisui Chemical Co., Ltd., substrate: cellulose-based nonwoven fabric, adhesive layer: acrylic adhesive, thickness 60 μm) was used instead of # 5782PGW as the double-sided tape in Example 1. A laminated polishing pad was prepared in the same manner as described above. The weight increase rate of the base material was 10%, and the peel strength of the double-sided tape was 800 g / cm.
When the peel resistance was evaluated using the laminated polishing pad, peeling occurred at the central portion of the polishing layer when 1000 samples were polished.

Schematic configuration diagram showing an example of a polishing apparatus used in CMP polishing

Explanation of symbols

1: Laminated polishing pad 2: Polishing surface plate 3: Abrasive (slurry)
4: Material to be polished (semiconductor wafer)
5: Support base (polishing head)
6, 7: Rotating shaft

Claims (5)

A laminated polishing pad in which a polishing layer and a cushion layer are laminated via a double-sided tape, wherein the base material of the double-sided tape is formed of a hydrophobic resin. The laminated polishing pad according to claim 1, wherein the hydrophobic resin is a polyester resin or a polypropylene resin. The laminated polishing pad according to claim 1, wherein the substrate is a nonwoven fabric. The laminated polishing pad according to any one of claims 1 to 3, wherein the peeling strength between the polishing layer and the double-sided tape and the peeling strength between the cushion layer and the double-sided tape are both 300 g / cm or more. The manufacturing method of a semiconductor device including the process of grind | polishing the surface of a semiconductor wafer using the lamination | stacking polishing pad in any one of Claims 1-4.

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