JP2005175435A5 - - Google Patents
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- JP2005175435A5 JP2005175435A5 JP2004287734A JP2004287734A JP2005175435A5 JP 2005175435 A5 JP2005175435 A5 JP 2005175435A5 JP 2004287734 A JP2004287734 A JP 2004287734A JP 2004287734 A JP2004287734 A JP 2004287734A JP 2005175435 A5 JP2005175435 A5 JP 2005175435A5
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50758403P | 2003-09-30 | 2003-09-30 | |
EP03447239A EP1521301A1 (en) | 2003-09-30 | 2003-09-30 | Method of formation of airgaps around interconnecting line |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005175435A JP2005175435A (en) | 2005-06-30 |
JP2005175435A5 true JP2005175435A5 (en) | 2005-11-04 |
JP4379878B2 JP4379878B2 (en) | 2009-12-09 |
Family
ID=34740672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004287734A Expired - Fee Related JP4379878B2 (en) | 2003-09-30 | 2004-09-30 | Method for selectively forming an air gap and apparatus produced by the method |
Country Status (1)
Country | Link |
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JP (1) | JP4379878B2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100712517B1 (en) * | 2005-07-14 | 2007-04-30 | 삼성전자주식회사 | Interposer of Semiconductor Device with Air Gap Structure |
JP4735314B2 (en) * | 2006-02-14 | 2011-07-27 | ソニー株式会社 | Semiconductor device and manufacturing method thereof |
FR2916303B1 (en) * | 2007-05-15 | 2009-07-31 | Commissariat Energie Atomique | PROCESS FOR PRODUCING AIR CAVITIES USING NANOTUBES |
JP2010258215A (en) | 2009-04-24 | 2010-11-11 | Renesas Electronics Corp | Semiconductor device and manufacturing method of semiconductor device |
KR102190654B1 (en) * | 2014-04-07 | 2020-12-15 | 삼성전자주식회사 | Semiconductor device and method of fabricating the same |
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2004
- 2004-09-30 JP JP2004287734A patent/JP4379878B2/en not_active Expired - Fee Related