JP2005072323A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of easily integrating a plurality of semiconductor layers of different materials without limitation of lattice constant or the like.
A thin film stacked structure in which a first semiconductor thin film 103, a second semiconductor thin film 107, and a third semiconductor thin film 111 having different semiconductor layer materials are stacked is provided on a substrate 101. Or the semiconductor thin film from which the material of the semiconductor layer to comprise differs from each other is provided in a plurality of planar regions divided one-dimensionally or two-dimensionally on the substrate. Furthermore, the thin film laminated structure or one semiconductor thin film is provided in each of the plurality of planar regions.
[Selection] Figure 1 (b)

Description

  The present invention relates to a semiconductor device including a plurality of semiconductor thin films.

  As a conventional semiconductor device, for example, there is a multi-wavelength light emitting element in which light emitting portions having different emission wavelengths are integrated. A conventional multi-wavelength light emitting element is described in, for example, Patent Document 1.

  12 (a) and 12 (b) are diagrams for explaining the structure of a conventional semiconductor device in which light emitting portions having three different wavelengths are integrated. FIG. 12 (a) is a top view and FIG. 12 (b). FIG. 13 is a cross-sectional view taken along the line AA ′ in FIG.

12A and 12B, reference numeral 3011 denotes a semiconductor substrate made of, for example, GaAs, 3012 denotes a buffer layer made of, for example, n-type GaAs, and 3013 denotes a first electrode made of, for example, n-type Al _x Ga _1-x As. The cladding layer, 3014 is, for example, a first active layer made of n-type Al _y Ga _1-y As, 3015 is, for example, a second active layer made of n-type Al _z Ga _1-z As, and 3016 is, for example, n-type Al _s. A third active layer made of Ga _1-s As, 3017 is a second clad layer made of, for example, n-type Al _t Ga _1-t As, and 3018 is a contact layer made of, for example, n-type GaAs. These semiconductor layers are stacked by a semiconductor epitaxial method.

Energy band gaps Eg (first active layer), Eg (second active layer), Eg (third active layer) of the first active layer 3014, the second active layer 3015, and the third active layer 3016, respectively. Layer) is
Eg (first active layer)> Eg (second active layer)> Eg (third active layer)
It is. The sizes of the energy band gaps Eg (first cladding layer) and Eg (second cladding layer) of the first cladding layer 3013 and the second cladding layer 3017 are:
Eg (first cladding layer)> Eg (first active layer)
Eg (second cladding layer)> Eg (third active layer)
It is.

  12A and 12B, each of 3019a, 3019b, and 3019c is a p-type diffusion region made of, for example, a Zn diffusion region. These p-type diffusion regions 3019a, 3019b, and 3019c are formed in the contact layer 3018, the cladding layer 3017, and the active layer. The diffusion front of the diffusion region 3019a is in the third active layer 3016, the diffusion front of the diffusion region 3019b is in the second active layer 3015, and the diffusion front of the diffusion region 3019c is in the first active layer 3014. Is inside. Reference numeral 3021 denotes an interlayer insulating film, 3022 denotes an individual electrode provided for each selective diffusion region, and 3023 denotes a common electrode provided on the back surface of the semiconductor substrate 3011.

  In the conventional semiconductor device shown in FIGS. 12A and 12B, the diffusion regions 3019a, 3019b, and 3019c have diffusion fronts in different active layers. Therefore, when a voltage is applied to each pn junction. Thus, light emission having different wavelengths corresponding to the light emission wavelength of the active layer having the diffusion front can be obtained.

Japanese Patent Laid-Open No. 11-233816

  However, the conventional semiconductor device has a structure in which all semiconductor layers including a plurality of active layers made of materials having different emission wavelengths are stacked by a semiconductor epitaxial method, and semiconductor layers having different lattice constants are stacked. There has been a problem that individual semiconductor layers constituting the laminated structure are limited by a lattice constant.

  The present invention has been made to solve such a conventional problem, and an object of the present invention is to provide a semiconductor device in which a plurality of semiconductor layers of different materials can be easily integrated without limitation such as lattice constant.

  The present invention provides a thin film laminated structure in which a plurality of semiconductor thin films having different semiconductor layer materials are provided on a substrate, or a plurality of planar regions divided one-dimensionally or two-dimensionally on a substrate. In addition, semiconductor thin films having different semiconductor layer materials are provided.

  According to the present invention, a plurality of semiconductor thin films having different semiconductor layer materials are integrated. Therefore, by forming each semiconductor thin film with one or a plurality of semiconductor layers, a plurality of semiconductor layers of different materials can be formed. There is an effect that it can be easily integrated without limitation of lattice constant.

Embodiment 1 FIG.
1 (a), 1 (b), and 1 (c) are diagrams illustrating the structure of the semiconductor device according to the first embodiment of the present invention. FIG. 1 (a) is a top view, and FIG. ) Is a cross-sectional view taken along the line AA 'in FIG. 1 (a), and FIG. 1 (c) is a cross-sectional view taken along the line BB' in FIG. 1 (a).

  1A, 1B, and 1C, reference numeral 102 denotes a conductive layer formed on the substrate 101, 103 denotes a first semiconductor thin film, 104 denotes a conductive layer, 105 denotes an interlayer insulating film, 106 Is a conduction layer, 107 is a second semiconductor thin film, 108 is a conduction layer, 109 is an interlayer insulation film, 110 is a conduction layer, 111 is a third semiconductor thin film, 112 is a conduction layer, and 117 is an interlayer insulation film.

  1A, 1B, and 1C, reference numerals 116a, 116b, and 116c denote the first semiconductor thin film 103, the second semiconductor thin film 107, and the third semiconductor thin film 111, respectively. This is an electrode contact portion where the conductive layers 104, 108, 112 in contact with the upper surface are connected to the wirings 113a, 113b, 113c. Reference numerals 115a, 115b, and 115c denote connection regions with external circuits such as circuits that drive and control the elements. 126b and 126c are electrode contact portions where the conductive layers 106 and 110 in contact with the lower surfaces of the second semiconductor thin film 107 and the third semiconductor thin film 111 are connected to the wirings 123b and 123c, respectively. 125a indicates a connection region between the first semiconductor thin film 103 and an external circuit, and 125b and 125c indicate connection regions between the wirings 123b and 123c and the external circuit.

  The substrate 101 is, for example, Au, Ti / Pt / Au laminated film, Au / Zn laminated film, Ni / Ge / Au laminated film, Ni / Au laminated film, Al, Ni / Al laminated film, Pd, Pd / Au laminated film In addition to a glass substrate on which a conductive layer 102 such as a film, a Ge / Pd laminated film, a Mg / Au laminated film, or a metal layer containing a plurality of these is formed, flexibility including an organic material is provided. A deformable substrate (for example, a PET film having a thickness of about 100 μm) or a deformable substrate coated with a material containing an organic material and having flexibility (for example, a thickness of about For example, a stainless film coated with 100 [μm] polyimide may be used. The conductive layers 102, 104, 106, 108, 110, and 112 are, for example, metal layers.

In the first semiconductor thin film 103, the second semiconductor thin film 107, and the third semiconductor thin film 111, for example, the wavelengths of light emitted from the respective semiconductor thin films are red (740 [nm]) and green (515 [nm]). ), Blue (450 [nm]). For example, the first semiconductor thin film 103 is made of an Al _x Ga _1-x As-based material (red light emitting material), and the second semiconductor thin film 107 is made of (Al _x Ga _1-x ) _y In _1-y P. For example, the third semiconductor thin film 111 can be a GaInN / GaN-based material (blue light-emitting material).

  2 (a-1) and 2 (a-2) are cross-sectional views illustrating an example of the first semiconductor thin film 103, and FIGS. 2 (b-1) and 2 (b-2) are second semiconductors. FIG. 2C-1 and FIG. 2C-2 are cross-sectional views illustrating an example of the third semiconductor thin film 111. FIG.

2 (a-1) and 2 (a-2), the first semiconductor thin film 103 includes an n-type GaAs layer 1031, an n-type Al _x Ga _1-x As layer 1032, and a p-type Al _y Ga. The stacked structure includes a _1-y As layer 1033, a p-type Al _z Ga _1-z As layer 1034, and a p-type GaAs layer 1035. 2B-1 and 2B-2, the second semiconductor thin film 107 includes an n-type GaAs layer 1071, an n-type Al _x In _1-x P layer 1072, and a p-type Ga. A stacked structure of a _y In _1-y P layer 1073, a p-type Al _z In _1-z P layer 1074, and a p-type GaAs layer 1075. Here, the compositions x and z of the clad layers of the n-type Al _x In _1-x P layer 1072 and the p-type Al _z In _1-z P layer 1074 are, for example, x = z so as to lattice match with GaAs. = 0.51. In addition, the composition y of the p-type Ga _y In _1-y P layer 1073 that is the active layer can be set to y = 0.51 so as to lattice match with GaAs, for example. 2 (c-1) and 2 (c-2), the third semiconductor thin film 111 includes an n-type GaN layer 1111 and a GaInN / GaN multiple quantum well layer (GaInN as the lowermost layer and the uppermost layer). (Multi-quantum well layer of GaInN layer and GaN layer) 1112, p-type AlGaN layer 1113, and p-type GaN layer 1114.

The red material is a material of (Al _x Ga _1-x ) _y In _1-y P (for example, y = 0.51 that lattice matches with GaAs), and the green material is GaInN / GaN. Other materials such as a system material having a wavelength of about 515 [nm] may be used. Further, the emission wavelength is not necessarily limited to the above wavelength. For example, the red light emission wavelength is appropriately selected from a wavelength range of approximately 630 to 780 [nm], the green light emission wavelength is approximately 490 to 560 [nm], and the blue light emission wavelength is approximately 450 to 490 [nm]. Can do.

  A manufacturing procedure of the semiconductor device according to the first embodiment will be described below. First, the substrate 101 provided with the conductive layer 102 on the upper surface, the first semiconductor thin film 103, the second semiconductor thin film 107, and the third semiconductor thin film 111 are prepared.

  The first semiconductor thin film 103, the second semiconductor thin film 107, and the third semiconductor thin film 111 are selective to the semiconductor thin film and the substrate between the semiconductor thin film and the substrate used for crystal growth of the semiconductor thin film. A peeling layer to be etched is provided, and the peeling layer is removed by etching to peel the semiconductor thin film from the substrate.

As for the first semiconductor thin film 103, as shown in FIG. 2 (a-1), a GaAs buffer layer 1002a and an AlAs layer 1003a to be a release layer are formed on a GaAs substrate 1001a, and on the AlAs layer 1003a, An n-type GaAs layer 1031, an n-type Al _x Ga _1-x As layer 1032, a p-type Al _y Ga _1-y As layer 1033, and a p-type Al _z Ga _1-z As layer 1034 constituting the first semiconductor thin film 103. , A p-type GaAs layer 1035 is stacked. Then, the first semiconductor thin film 103 having the structure shown in FIG. 2A-2 is obtained by removing the first semiconductor thin film 103 from the GaAs substrate 1001a by etching away the AlAs layer 1003a which is a peeling layer. .

As for the second semiconductor thin film 107, as shown in FIG. 2 (b-1), a GaAs buffer layer 1002b and an AlAs layer 1003b to be a release layer are formed on a GaAs substrate 1001b, and on this AlAs layer 1003b, N-type GaAs layer 1071, n-type Al _x In _1-x P layer 1072, p-type Ga _y In _1-y P layer 1073, p-type Al _z In _1-z P layer 1074 constituting the second semiconductor thin film 107 , A p-type GaAs layer 1075 is stacked. Then, the second semiconductor thin film 107 having the structure shown in FIG. 2B-2 is obtained by etching away the AlAs layer 1003b which is a peeling layer and peeling the second semiconductor thin film 107 from the GaAs substrate 1001b. . Here, as described above, the compositions x and z of the clad layers of the n-type Al _x In _1-x P layer 1072 and the p-type Al _z In _1-z P layer 1074 are, for example, lattice-matched with GaAs. x = z = 0.51. In addition, the composition y of the p-type Ga _y In _1-y P layer 1073 that is the active layer can be set to y = 0.51 so as to lattice match with GaAs, for example. Further, for example, a (Al _x Ga _1-x ) _y In _1-y P stacked structure and a heteroepitaxial structure (a single heterostructure such as a cladding layer / active layer or a double heterostructure such as a cladding layer / active layer / cladding layer) When the heterostructure is provided, (Al _x Ga _1-x ) _y In _{1-y is set} so that the energy band gap of the cladding layers (1072 and 1074) is larger than the energy band gap of the active layer (1073). The composition x and y of P may be adjusted as appropriate. Further, in consideration of lattice matching with GaAs, the composition x of (Al _x Ga _1-x ) _0.51 In _0.49 P may be adjusted as appropriate.

  As for the third semiconductor thin film 111, as shown in FIG. 2 (c-1), an AlN layer 1005 serving as a peeling layer is formed on the sapphire substrate 1004, and the third semiconductor thin film is formed on the AlN layer 1005. An n-type GaN layer 1111, a GaInN / GaN multiple quantum well layer 1112, a p-type AlGaN layer 1113, and a p-type GaN layer 1114 are stacked. Then, the third semiconductor thin film 111 having the structure shown in FIG. 2C-2 is obtained by removing the third semiconductor thin film 111 from the sapphire substrate 1004 by etching away the AlN layer 1005 as a peeling layer. .

  Next, the first semiconductor thin film 103 is bonded onto the conductive layer 102 provided on the substrate 101. Next, a conductive layer 104 is formed on the first semiconductor thin film 103. Next, an interlayer insulating film 105 is formed, and a conductive layer 106 is formed thereon. Thereafter, the third semiconductor thin film 107, the conductive layer 108, the interlayer insulating film 109, the conductive layer 110, the third semiconductor thin film 111, and the conductive layer 112 are sequentially stacked.

  The semiconductor thin film is bonded to the conductive layer by intermolecular force, for example. In bonding the semiconductor thin film to the conductive layer, a surface treatment is applied to the bonding surface of the semiconductor thin film. On the other hand, the surface of the conductive layer for bonding the semiconductor thin film is appropriately subjected to surface treatment. The metal pattern of the conductive layer can be formed by a standard lift-off method.

  After the uppermost interlayer insulating film 117 is formed, an opening is provided in the region of the interlayer insulating film 117 where the electrode contact portions 116a, 116b, 116c, 126b, 126c and the connection region 125a are provided, and wirings 113a, 113b, 113c, 123b are provided. , 123c. Through the above procedure, the semiconductor device of the first embodiment is obtained.

  The operation of the semiconductor device of the first embodiment will be described below. The semiconductor device according to the first embodiment is, for example, a light emitting element that emits light from an end face direction (a direction perpendicular to a stacking direction of semiconductor thin films).

  In order to cause the first semiconductor thin film 103 to emit light, for example, 0 [V] is applied to the conductive layer 102, and +1.6 to +2.2 [V], for example +1.9 [V] is applied to the conductive layer 104. Apply. Due to this potential difference +1.9 [V], the light emitting portion of the first semiconductor thin film 103 emits light. In order to cause the second semiconductor thin film 107 to emit light, for example, 0 [V] is applied to the conductive layer 106, and +2.4 to +3 [V], for example +2.7 [V] is applied to the conductive layer 108. Apply. Due to this potential difference +2.7 [V], the light emitting portion of the second semiconductor thin film 107 emits light. Similarly, in order to cause the third semiconductor thin film 111 to emit light, for example, the conductive layer 110 is set to 0 [V], the conductive layer 112 is set to +2.8 to +4 [V], for example, +3.4 [V], Apply each. Due to this potential difference +3.4 [V], the light emitting portion of the third semiconductor thin film 111 emits light. The voltage exemplified here is ideally applied to the pn junction surface of the pn junction region or the region including the vicinity of the pn junction in a substantially vertical direction, and the voltage Vf applied between the pn junctions is Therefore, it is necessary to apply a voltage satisfying at least the relationship of Vf> Vd to the diffusion potential Vd at the pn junction interface between the electrodes of the element. Actually, the voltage applied between the electrodes of the element (voltage applied between the p-side electrode and the n-side electrode) depends on the resistivity of each semiconductor layer, the contact resistance between the electrode and the semiconductor layer, the resistance of the wiring, the semiconductor thin film- Since various resistances such as the contact resistance of the conductive layer influence the applied voltage, an applied voltage may be selected as appropriate so that a current capable of obtaining a desired light emission intensity from each layer is injected into the element.

  Thus, in order to make the first semiconductor thin film 103 emit light, the second semiconductor thin film 107 emits light between the conductive layer 104 (electrode contact portion 116a, connection region 115a) and the conductive layer 102 (connection region 125a). In order to cause the third semiconductor thin film 111 to emit light between the conductive layer 108 (electrode contact portion 116b, connection region 115b) and the conductive layer 106 (electrode contact portion 126b, connection region 125b), the conductive layer 112 (electrode contact portion 116c). , Connection region 115c) and conductive layer 110 (electrode contact portion 126c, connection region 125c), voltages are independently applied to individually control the drive currents of the light emitting elements of the respective semiconductor thin films, and the respective semiconductor thin films. By adjusting the intensity of the light emitted from each individual light emission color (light emitting element) To control the emission color). Therefore, in the first embodiment, drive control means for individually controlling the voltage or current applied to each semiconductor thin film is further provided, or such drive control means is connected to the connection regions 115a, 115b, 115c, 125a, Connected to 125b and 125c, the intensity of light emitted from each semiconductor thin film is controlled.

  As described above, according to the first embodiment, a plurality of semiconductor thin films of different materials are stacked by bonding, and voltage or current is individually controlled to be applied to the stacked semiconductor thin films that operate as the respective light emitting portions. As a result, a plurality of semiconductor layers of different materials can be easily integrated without limitation of lattice constant and the like, and a compact semiconductor device with variable emission color and variable emission intensity can be obtained. In addition, a deformable light emitting element can be obtained by using a flexible deformable substrate as the substrate to which the semiconductor thin film is bonded.

Modification 1 of Embodiment 1
FIGS. 3A and 3B are views for explaining the structure of the semiconductor device according to the first modification of the first embodiment. FIG. 3A is a top view and FIG. It is sectional drawing between AA 'of (a). In FIG. 3 (a) and FIG. 3 (b), the same components as those in FIG. 1 (a), FIG. 1 (b), and FIG.

  The semiconductor device of Modification 1 of Embodiment 1 is the same as that of the semiconductor device of Embodiment 1 (see FIGS. 1 (a), 1 (b), and 1 (c)). The interlayer insulating films 105 and 109 are omitted. In the first modification of the first embodiment, the conductive layer 104 is in contact with the upper surface of the first semiconductor thin film 103 and the lower surface of the second semiconductor thin film 107, and the conductive layer 108 is the upper surface of the second semiconductor thin film 107. In addition, the lower surface of the third semiconductor thin film 111 is contacted.

  The operation of the semiconductor device according to the first modification of the first embodiment will be described below. The operation of causing only one of the semiconductor thin films to emit light is the same as that in the first embodiment. In order to cause the first semiconductor thin film 103 to emit light, for example, 0 [V] is applied to the conductive layer 102, and +1.6 to +2.2 [V], for example +1.9 [V] is applied to the conductive layer 104. Apply. Due to this potential difference +1.9 [V], the light emitting portion of the first semiconductor thin film 103 emits light. In order to cause the second semiconductor thin film 107 to emit light, for example, 0 [V] is applied to the conductive layer 104, and +2.4 to +3 [V], for example +2.7 [V] is applied to the conductive layer 108. Apply. Due to this potential difference +2.7 [V], the light emitting portion of the second semiconductor thin film 107 emits light. Similarly, in order to cause the third semiconductor thin film 111 to emit light, for example, 0 [V] is applied to the conductive layer 108, +2.8 to +4 [V], for example +3.4 [V] is applied to the conductive layer 112. Apply each. Due to this potential difference +3.4 [V], the light emitting portion of the third semiconductor thin film 111 emits light. As described above, when only one of the semiconductor thin films emits light, a predetermined voltage and 0 [V] are applied to the upper and lower conductive layers of the semiconductor thin film to emit light.

  On the other hand, in order to cause the first semiconductor thin film 103 and the second semiconductor thin film 107 to emit light simultaneously, for example, 0 [V] is applied to the conductive layer 102 and +1.6 to +2.2 [V] is applied to the conductive layer 104. ], For example, +1.9 [V] and +4 to +5.2 [V], for example, +4.6 [V], are applied to the conductive layer 108, respectively, so that the first semiconductor thin film 103 and the second semiconductor are applied. A potential difference necessary for light emission of each light emitting portion of the thin film 107 is applied. Similarly, in order to make all the semiconductor thin films emit light simultaneously, for example, the conductive layers 102, 104, 108, and 112 have 0 [V], +1.6 to +2.2 [V], for example, +1.9 [V]. , +4 to +5.2 [V], for example, +4.6 [V], +6.8 to +9.2 [V], for example +8 [V], respectively, so that the light emitting portions of the respective semiconductor thin films emit light. A potential difference necessary to achieve this is applied. As described above, the voltage applied to each layer can be appropriately adjusted so that the amount of light from each layer becomes a desired amount of light. Moreover, the example of the voltage applied to each layer is an example, and is not limited to the above voltage example by the contact resistance between each semiconductor layer and the conductive layer, the contact resistance between the semiconductor and the electrode, the resistivity of each semiconductor layer, etc. Needless to say.

  As described above, in the first modification of the first embodiment, the voltage applied to each semiconductor thin film varies depending on the voltage applied to the other semiconductor thin film, so that the voltage or current applied to the other semiconductor thin film is taken into consideration. Drive control means for collectively controlling voltages or currents applied to the respective semiconductor thin films is further provided, or such drive control means is connected to the connection regions 115a, 115b, 115c, and 125a, and the respective semiconductor thin films are connected. Controls the intensity of emitted light.

Other Modifications of First Embodiment In addition to the first modification, various modifications such as the following (1) to (5) are possible for the first embodiment.
(1) A plurality of independent semiconductor thin film laminated structures can be arranged or integrated on a substrate one-dimensionally or two-dimensionally.
(2) The semiconductor thin films to be laminated may be formed in two layers instead of three layers in consideration of a desired function, space, and the like. Moreover, it can also be set as four or more layers.
(3) If flexibility is not required, the substrate 101 can be a rigid substrate instead of a deformable material.
(4) In addition, various modifications such as the structure, arrangement, and size of the wiring and the opening of the interlayer insulating film are possible.
(5) In the first embodiment, an example in which a semiconductor thin film including a light emitting element is stacked has been specifically described. However, a semiconductor thin film including another element can be stacked to achieve integration.

Embodiment 2
4 (a) and 4 (b) are diagrams for explaining the structure of the semiconductor device according to the second embodiment of the present invention. FIG. 4 (a) is a top view and FIG. 4 (b) is FIG. It is sectional drawing between AA 'of). 4 (a) and 4 (b), components similar to those in FIGS. 1 (a), 1 (b), and 1 (c) are denoted by the same reference numerals.

  The semiconductor device of the second embodiment is the same as that of the semiconductor device of the first embodiment (see FIGS. 1A and 1B), and the conductive layers 104, 106, 108, 110 and the interlayer insulating films 105, 109. In addition, the wiring 113a, 113b, 123b, 123c is omitted. In the second embodiment, the first semiconductor thin film 103 and the second semiconductor thin film 107 and the second semiconductor thin film 107 and the third semiconductor thin film 111 are directly bonded.

  For example, the first semiconductor thin film 103, the second semiconductor thin film 107, and the third semiconductor thin film 111 are configured so that the emission wavelength becomes shorter in order. The bonding interface between the first semiconductor thin film 103 and the second semiconductor thin film 107 can be, for example, GaAs / GaAs. The bonding interface between the second semiconductor thin film 107 and the third semiconductor thin film 111 can be, for example, GaAs / GaN.

  The manufacturing procedure of the semiconductor device of the second embodiment is that there is no procedure for forming a conductive layer and an interlayer insulating film provided between semiconductor thin films, and a procedure for forming an interconnection 113a by providing an opening in the interlayer insulating film 117. Except that the wirings 113b, 113c, 123b, and 123c are not formed, the manufacturing procedure of the semiconductor device of the first embodiment is the same.

  The operation of the semiconductor device of the second embodiment will be described below. The semiconductor device according to the second embodiment is a light emitting element that emits light from the end face direction (a direction perpendicular to the stacking direction of the semiconductor thin films), for example, as in the first embodiment.

  In the second embodiment, a voltage is applied between the conductive layer 112 (electrode contact portion 116c, connection region 115c) and the conductive layer 102 (connection region 125a), so that the first semiconductor thin film 103 and the second semiconductor The light emitting portions of the thin film 107 and the third semiconductor thin film 111 emit light and the applied voltage is changed to control the light emission intensity of each semiconductor thin film. Therefore, in the second embodiment, drive control means for controlling the voltage or current applied to the uppermost and lowermost semiconductor thin films is further provided, or such drive control means is connected to the connection regions 115c and 125c. Thus, the intensity of light emitted from each semiconductor thin film is controlled.

  In the second embodiment, since there are only one electrode at the top and bottom, a semiconductor thin film that emits light cannot be selected. Therefore, white light can be obtained by simultaneously emitting light using the light emitting semiconductor thin films of the three primary colors.

  As described above, according to the second embodiment, since the semiconductor thin films are directly bonded and laminated, the manufacturing procedure can be simplified as compared with the first embodiment.

Modification 1 of Embodiment 2
5 (a) and 5 (b) are diagrams for explaining the structure of the semiconductor device according to the first modification of the second embodiment, in which FIG. 5 (a) is a top view and FIG. 5 (b) is FIG. It is sectional drawing between AA 'of (a). In FIG. 5 (a) and FIG. 5 (b), components similar to those in FIG. 4 (a) and FIG. 4 (b) are denoted by the same reference numerals.

  In the semiconductor device according to the first modification of the second embodiment, the conductive layer 112 is not provided on the third semiconductor thin film 111. Other structures are the same as those of the semiconductor device of the second embodiment. By using such a structure in which the conductive layer 112 is not provided, a light-emitting element that emits light from the upper surface can be obtained.

  In the first modification of the second embodiment, it is desirable to stack the semiconductor thin film so that the emission wavelength becomes longer in the lower semiconductor thin film. That is, it is desirable to configure the first semiconductor thin film 103, the second semiconductor thin film 107, and the third semiconductor thin film 111 so that the emission wavelength becomes shorter in order. For example, it is desirable to stack a red light emitting semiconductor thin film, a green light emitting semiconductor thin film, and a blue light emitting semiconductor thin film in this order from the lower layer. By laminating the semiconductor thin film in this way, it is possible to prevent the light emitted from the lower semiconductor thin film from being significantly absorbed by the upper semiconductor thin film and to attenuate the emission intensity at that wavelength when viewed from the upper surface. it can.

  In the first modification of the second embodiment, as in the second embodiment, there are only one electrode on the upper and lower sides, so it is not possible to select a semiconductor thin film to emit light. White light can be obtained by simultaneously emitting light using a thin film. Of course, it is not limited to white light, and the color of the synthesized visual light may be another color.

Modification 2 of Embodiment 2
6 (a) and 6 (b) are diagrams for explaining the structure of the semiconductor device according to the second modification of the second embodiment, in which FIG. 6 (a) is a top view and FIG. 6 (b) is FIG. It is sectional drawing between AA 'of (a). In FIG. 6 (a) and FIG. 6 (b), the same components as those in FIG. 4 (a) and FIG. 4 (b) are denoted by the same reference numerals.

  The semiconductor device of the second modification of the second embodiment is different from the semiconductor device of the second embodiment (see FIGS. 4A and 4B) in that the conductive layer 112 on the third semiconductor thin film 111 is formed. The transparent conductive layer (transparent conductive film, transparent electrode) 112a is used. By providing the transparent electrode 112a in this way, light can be extracted from the upper surface, and the current flowing in the semiconductor thin film can be uniformly spread in the semiconductor thin film.

Modification 3 of Embodiment 2
FIG. 7 is a top view for explaining the structure of the semiconductor device according to the third modification of the second embodiment, and the same components as those in FIGS. 4A and 4B are denoted by the same reference numerals.

  The semiconductor device according to the third modification of the second embodiment is different from the semiconductor device according to the second embodiment (see FIGS. 4A and 4B) in that the wiring contacts the upper surface of the first semiconductor thin film 103. 115 a and a wiring 115 b in contact with the upper surface of the second semiconductor thin film 107 are provided.

Other Modifications of Second Embodiment For other various modifications, for example, an equivalent modification described in the first embodiment can be applied.

Embodiment 3
FIGS. 8A and 8B are views for explaining the structure of the semiconductor device according to the third embodiment of the present invention. FIG. 8A is a top view and FIG. It is sectional drawing between AA 'of). In FIG. 8 (a) and FIG. 8 (b), the same components as those in FIG. 5 (a), FIG. 5 (b), and FIG.

  The semiconductor device of the third embodiment is a semiconductor device of the first modification of the second embodiment (see FIGS. 5A and 5B) or a semiconductor device of the third modification of the second embodiment (see FIG. In FIG. 7), the first semiconductor film 103, the second semiconductor thin film 107, the third semiconductor film 103 in the first region, the second region, and the third region adjacent to each other as the divided planar regions on the conductive layer 102. Each semiconductor thin film 111 is provided as a single layer without being stacked. Therefore, in the third embodiment, the lower surfaces of all the semiconductor thin films are in contact with the conductive layer 102.

  In the semiconductor device of the third embodiment, in order to cause the first semiconductor thin film 103 to emit light, for example, 0 [V] is applied to the conductive layer 102 and +1.6 to +2.2 [V] is applied to the electrode contact portion 116a. For example, +1.9 [V] is applied. Due to this potential difference +1.9 [V], the light emitting portion of the first semiconductor thin film 103 emits light. In order to cause the second semiconductor thin film 107 to emit light, for example, 0 [V] is applied to the conductive layer 102, +2.4 to +3 [V], for example +2.7 [V], to the electrode contact portion 116b, Apply each. Due to this potential difference +2.7 [V], the light emitting portion of the second semiconductor thin film 107 emits light. Similarly, in order to cause the third semiconductor thin film 111 to emit light, for example, 0 [V] is applied to the conductive layer 102, and +2.8 to +4 [V], for example +3.4 [V], is applied to the electrode contact portion 116c. , Respectively. Due to this potential difference +3.4 [V], the light emitting portion of the third semiconductor thin film 111 emits light.

  Thus, in order to cause the first semiconductor thin film 103 to emit light, between the electrode contact portion 116a (connection region 115a) and the conductive layer 102 (connection region 125a), to cause the second semiconductor thin film 107 to emit light, the electrode contact portion. In order to cause the third semiconductor thin film 111 to emit light between 116b (connection region 115b) and the conductive layer 102 (connection region 125a), voltage is independently applied between the electrode contact portion 116c (connection region 115c) and the electrode contact portion 126c. To each of the semiconductor thin film light emitting elements, and individually controlling the drive currents of the light emitting elements of each semiconductor thin film, and individually adjusting the intensity of light emitted from each semiconductor thin film, thereby making it possible to visually recognize the luminescent color (as a light emitting element). (Emission color).

  As described above, according to the third embodiment, since a single-layer semiconductor thin film is integrated in a plurality of planar regions divided in the horizontal direction on the conductive layer 102, the heat of semiconductor thin films of different materials Even when various characteristics such as mechanical characteristics, mechanical characteristics, electrical characteristics, and light emission characteristics are greatly different, it can be integrated at a high density and at the same time can be easily driven and controlled.

Modification 1 of Embodiment 3
FIG. 9 is a top view for explaining the structure of the semiconductor device according to the first modification of the third embodiment, and the same components as those in FIGS. 8A and 8B are denoted by the same reference numerals.

  In the first modification of the third embodiment, the conductive layer 102 on the lower surface of the semiconductor thin film is divided into three conductive layers 102a, 102b, and 102c, and the first semiconductor thin film 103, the second semiconductor thin film 107, and the second The lower surface of the third semiconductor thin film 111 is in contact with the divided conductive layers 102a, 102b, and 102c. The conductive layers 102a, 102b, and 102c can be conductive layers made of different materials.

  Thus, by dividing the conductive layer on the lower surface of the semiconductor thin film and bringing the lower surface of each semiconductor thin film into contact with different conductive layers, a more accurate bonding structure can be formed according to the characteristics of each semiconductor thin film Can do.

Other Modifications of Third Embodiment Also in the third embodiment, the second embodiment (see FIGS. 4A and 4B) or the second modification of the second embodiment (see FIG. Similar to a) and FIG. 6 (b)), it is possible to provide a conductive layer or a transparent electrode on the upper surface of each semiconductor thin film. It is also possible to provide a semiconductor thin film in each of a plurality of planar regions divided two-dimensionally as well as a plurality of planar regions divided one-dimensionally.

Embodiment 4
10 (a), 10 (b), and 10 (c) are diagrams illustrating the structure of the semiconductor device according to the fourth embodiment of the present invention. FIG. 10 (a) is a top view and FIG. 10 (b). ) Is a cross-sectional view taken along the line AA ′ in FIG. 10A, and FIG. 10C is a cross-sectional view taken along the line BB ′ in FIG. 10 (a), 10 (b), and 10 (c) are the same as those in FIGS. 5 (a), 5 (b), 8 (a), and 8 (b). The same reference numerals are given.

  The semiconductor device of the fourth embodiment is the same as the semiconductor device of the first modification of the second embodiment (see FIGS. 5A and 5B) or the semiconductor device of the third embodiment (FIG. 8A). ) And FIG. 8B), the first semiconductor thin film 103 and the second semiconductor thin film 107 are stacked in two layers in the first region on the conductive layer 102, and the second region on the conductive layer 102 is provided. In this region, the third semiconductor thin film 111 is provided as a single layer.

In the fourth embodiment, for example, the first semiconductor thin film 103 is made of an Al _x Ga _1-x As-based material that emits red light, or (Al _x Ga _1-x ) _y In _1-y P (for example, The second semiconductor thin film 107 is a material of (Al _x Ga _1-x ) _y In _1-y P (for example, y = The material 0.51), the GaInN / GaN-based material, or the third semiconductor thin film 111 can be a GaInN / GaN-based material that emits blue light.

  In the fourth embodiment, for the first semiconductor thin film 103 and the second semiconductor thin film 107 stacked in two layers, a voltage is applied between the electrode contact portion 116b (connection region 115b) and the conductive layer 102 (connection region 125a). Is applied to cause the light emitting portions of the two semiconductor thin films to emit light, and the applied voltage is changed to change the emission intensity of the two semiconductor thin films. For the single-layer third semiconductor thin film 111, by applying a voltage between the electrode contact portion 116c (connection region 115c) and the conductive layer 102 (connection region 125a), the light-emitting portion emits light, and The light emission intensity is changed by changing the voltage to be applied.

  As described above, according to the fourth embodiment, since the region where the semiconductor thin film is provided is divided into a plurality of regions, when the semiconductor thin films are stacked, it is possible to select and bond a pair combination that is easier to bond. In addition, when a voltage is applied to the laminated structure of semiconductor thin films at once, the operation can be easily controlled by selecting a material having a relatively small voltage drop and applying a voltage in pairs.

Modified Example of Fourth Embodiment Also in the fourth embodiment, the first embodiment (see FIGS. 1 (a), 1 (b), and 1 (c)) and the first embodiment are used as the laminated structure. 1 (see FIGS. 3 (a) and 3 (c)), the second embodiment (see FIGS. 4 (a) and 4 (b)), and the second modification of the second embodiment (FIG. 6 (a) and FIG. 6 (b)), or the laminated structure of the third modification of the second embodiment (see FIG. 7) can be adopted. (See FIGS. 4 (a) and 4 (b)), the structure of the second modification of the second embodiment (see FIGS. 6 (a) and 6 (b)) can also be adopted. In other words, each semiconductor thin film is provided with an individual electrode so that a voltage is individually applied to each semiconductor thin film, or a structure in which a conductive layer or a transparent electrode is provided on the upper surface of the uppermost semiconductor thin film. Is also possible.

  In the fourth embodiment, the first region has a two-layer stacked structure and the second region has a single-layer semiconductor thin film. However, the number of layers in each region can be changed as appropriate. . A structure in which a semiconductor thin film is provided in each of the regions divided into three or more is also possible.

Embodiment 5
11 (a) and 11 (b) are diagrams illustrating the structure of the semiconductor device according to the fifth embodiment of the present invention. FIG. 11 (a) is a top view and FIG. 11 (b) is FIG. It is sectional drawing between AA 'of). In FIG. 11 (a) and FIG. 11 (b), the same components as those in FIG. 8 (a) and FIG. 8 (b) are denoted by the same reference numerals.

  The semiconductor device of the fifth embodiment is the same as the semiconductor device of the third embodiment (see FIGS. 8A and 8B), the first semiconductor thin film 103 and the second semiconductor thin film 103 provided in the first region. Phosphors (fluorescent material patterns) 120a, 120b, and 120c having different emission colors are respectively provided above or above the second semiconductor thin film 107 provided in the first region and the third semiconductor thin film 111 provided in the third region. It is provided.

  In the fifth embodiment, the first semiconductor thin film 103, the second semiconductor thin film 107, and the third semiconductor thin film 111 are, for example, semiconductor thin films having the same structure made of the same material, for example, GaInN / A semiconductor thin film including a GaN multiple quantum well can be obtained. Note that these semiconductor thin films may have different materials and different structures.

  The fluorescent materials 120a, 120b, and 120c are materials that can obtain different emission colors, and are formed in regions that cover all or part of each semiconductor thin film. Here, for example, the phosphor 120a on the first semiconductor thin film 103 is a fluorescent material that emits red light, the phosphor 120b on the second semiconductor thin film 107 is a fluorescent material that emits green light, and on the third semiconductor thin film 111. The phosphor 120c is a fluorescent material that emits blue light.

  In the semiconductor device of the fifth embodiment, as in the third embodiment, the electrode contact portion 116b (connection region 115b) is provided between the electrode contact portion 116a (connection region 115a) and the conductive layer 102 (connection region 125a). In order to cause the third semiconductor thin film 111 to emit light between the conductive layer 102 (connection region 125a) and the electrode contact portion 116c (connection region 115c) and the electrode contact portion 126c, a voltage is applied individually to The light emitting portions of the first semiconductor thin film 103, the second semiconductor thin film 107, and the third semiconductor thin film 111 emit light, and the applied voltage is changed to individually control the emission intensity of each semiconductor thin film.

  The light extracted from the upper surface of each semiconductor thin film is incident on the phosphors 120a, 120b, and 120c provided on the respective semiconductor thin films to excite and emit the respective phosphors, and the phosphor 120a emits red light. The green light is extracted from the phosphor 120b, and the blue light is extracted from the phosphor 120c. By controlling the light emission intensity of each semiconductor thin film individually, the light emission color (light emission color as the light emitting element) that can be seen as a whole is controlled.

  As described above, according to the fifth embodiment, since the phosphors having different emission colors are provided on the respective semiconductor thin films, the emission color can be adjusted by appropriately selecting the phosphor material. .

Variations of Embodiments In each of the above embodiments, an embodiment in which three semiconductor thin films are integrated is described as one unit. However, one unit is constituted by two semiconductor thin films or four or more semiconductor thin films. It is also possible. Further, the integrated semiconductor thin film is not limited to an example that covers a wide emission wavelength from blue to red. For example, it is possible to integrate a plurality of semiconductor thin films and to integrate the semiconductor thin films such that each semiconductor thin film changes with an appropriate wavelength step width (for example, 30 [nm] steps) within a red range. Note that the details of the relationship between the shape and size, the lamination relationship, the wiring shape, the positional relationship, and the like illustrated for explanation in each of the above embodiments do not limit the present invention.

It is a top view explaining the structure of the semiconductor device of Embodiment 1 of this invention. It is sectional drawing between A-A 'of Fig.1 (a). It is sectional drawing between B-B 'of Fig.1 (a). It is sectional drawing explaining an example of the 1st semiconductor thin film in the semiconductor device of Embodiment 1 of this invention. It is sectional drawing explaining an example of the 1st semiconductor thin film in the semiconductor device of Embodiment 1 of this invention. It is sectional drawing explaining an example of the 2nd semiconductor thin film in the semiconductor device of Embodiment 1 of this invention. It is sectional drawing explaining an example of the 2nd semiconductor thin film in the semiconductor device of Embodiment 1 of this invention. It is sectional drawing explaining an example of the 3rd semiconductor thin film in the semiconductor device of Embodiment 1 of this invention. It is sectional drawing explaining an example of the 3rd semiconductor thin film in the semiconductor device of Embodiment 1 of this invention. It is a top view explaining the structure of the semiconductor device of the modification 1 of Embodiment 1 of this invention. It is sectional drawing between A-A 'of Fig.3 (a). It is a top view explaining the structure of the semiconductor device of Embodiment 2 of this invention. It is sectional drawing between A-A 'of Fig.4 (a). It is a top view explaining the structure of the semiconductor device of the modification 1 of Embodiment 2 of this invention. It is sectional drawing between A-A 'of Fig.5 (a). It is a top view explaining the structure of the semiconductor device of the modification 2 of Embodiment 2 of this invention. It is sectional drawing between A-A 'of Fig.6 (a). It is a top view explaining the structure of the semiconductor device of the modification 3 of Embodiment 2 of this invention. It is a top view explaining the structure of the semiconductor device of Embodiment 3 of this invention. It is sectional drawing between A-A 'of Fig.8 (a). It is a top view explaining the structure of the semiconductor device of the modification 1 of Embodiment 3 of this invention. It is a top view explaining the structure of the semiconductor device of Embodiment 4 of this invention. It is sectional drawing between A-A 'of Fig.10 (a). It is sectional drawing between B-B 'of Fig.10 (a). It is a top view explaining the structure of the semiconductor device of Embodiment 5 of this invention. It is sectional drawing between A-A 'of Fig.11 (a). It is a top view explaining the structure of the conventional semiconductor device. It is sectional drawing between A-A 'of Fig.12 (a).

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Substrate 102 Conductive layer 103 First semiconductor thin film 104 Conductive layer 105 Interlayer insulating film 106 Conductive layer 107 Second semiconductor thin film 108 Conductive layer 109 Interlayer insulating film 110 Conductive layer 111 Semiconductor thin film 112 Conductive layer 112a Transparent conductive layer (transparent conductive Membrane, transparent electrode)
113a, 113b, 113c wiring 115a, 115b, 115c connection region 116a, 116b, 116c electrode contact portion 117 interlayer insulating film 120a, 120b, 120c phosphor 123b, 123c wiring 125a, 125b, 125c connection region 126b, 126c electrode contact portion 1001a , 1001b GaAs substrate 1002a, 1002b GaAs buffer layer 1003a, 1003b AlAs layer 1004 Sapphire substrate 1005 AlN layer 1031 n-type GaAs layer 1032 n-type Al _x Ga _1-x As layer 1033 p-type Al _y Ga _1-y As layer 1034 p type _Al z _{Ga 1-z} As layer 1035 p-type GaAs layer 1071 n-type GaAs layer 1072 n-type _{Al x In 1-x} P layer 1073 p-type _{Ga y In 1-y} P layer 1074 p-type Al _z In _1-z P layer 1075 p-type GaAs layer 1111 n-type GaN layer 1112 GaInN / GaN multiple quantum well layer 1113 p-type AlGaN layer 1114 p-type GaN layer

Claims (17)

  A semiconductor device comprising: a thin film stack structure in which a plurality of semiconductor thin films having different semiconductor layer materials are stacked on a substrate.   2. The semiconductor device according to claim 1, wherein two conductive layers and an insulating film disposed between the conductive layers are provided between the upper and lower semiconductor thin films constituting the thin film laminated structure.   2. The semiconductor device according to claim 1, wherein a conductive layer is provided between two upper and lower semiconductor thin films constituting the thin film laminated structure.   2. The semiconductor device according to claim 1, wherein the upper and lower semiconductor thin films constituting the thin film laminated structure are directly bonded.   5. The semiconductor device according to claim 4, wherein an electrode for applying a voltage is provided only on the uppermost semiconductor thin film and the lowermost semiconductor thin film constituting the thin film laminated structure.   5. The semiconductor device according to claim 4, wherein a transparent conductive film is provided on an upper surface of the uppermost semiconductor thin film constituting the thin film laminated structure.   5. The semiconductor device according to claim 4, wherein an electrode for applying a voltage is provided on all the semiconductor thin films constituting the thin film laminated structure.   A semiconductor device comprising a plurality of planar regions divided one-dimensionally or two-dimensionally on a substrate, and semiconductor thin films having different semiconductor layer materials, respectively, are provided.   9. The semiconductor device according to claim 8, wherein conductive layers that are electrically separated from each other are provided between the substrate and each of the semiconductor thin films. A semiconductor thin film or a thin film laminated structure in which a plurality of semiconductor thin films are laminated is provided in each of a plurality of planar regions divided one-dimensionally or two-dimensionally on a substrate,
A semiconductor device, wherein the constituent materials of the semiconductor thin film are different from each other.   The semiconductor device according to claim 10, wherein the number of stacked semiconductor thin films provided in at least two of the planar regions is different. A semiconductor thin film is provided on each of a plurality of planar regions divided one-dimensionally or two-dimensionally on a substrate,
Phosphors having different emission wavelengths are provided on the semiconductor thin film, respectively.   13. The semiconductor device according to claim 12, wherein the semiconductor thin films provided in the plurality of planar regions are made of a material having the same emission wavelength.   13. The semiconductor device according to claim 1, further comprising drive control means for controlling a voltage or current applied to each thin film laminated structure or semiconductor thin film.   13. The semiconductor device according to claim 1, 8, 10, or 12, wherein each of the semiconductor thin films is a light emitting element that operates as a light emitting portion.   11. The semiconductor device according to claim 1, wherein each of the semiconductor thin films is a multi-wavelength light emitting element that operates as a light emitting unit that emits light at a different wavelength.   The semiconductor device according to claim 1, wherein the substrate is made of a deformable material.

Images