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JPH07283438A - LED display - Google Patents

LED display

Info

Publication number
JPH07283438A
JPH07283438A JP6983694A JP6983694A JPH07283438A JP H07283438 A JPH07283438 A JP H07283438A JP 6983694 A JP6983694 A JP 6983694A JP 6983694 A JP6983694 A JP 6983694A JP H07283438 A JPH07283438 A JP H07283438A
Authority
JP
Japan
Prior art keywords
led
chip
height
led chip
display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6983694A
Other languages
Japanese (ja)
Other versions
JP3351447B2 (en
Inventor
Yoshifumi Nagai
芳文 永井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP6983694A priority Critical patent/JP3351447B2/en
Publication of JPH07283438A publication Critical patent/JPH07283438A/en
Application granted granted Critical
Publication of JP3351447B2 publication Critical patent/JP3351447B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

(57)【要約】 【目的】 発光波長の異なるLEDチップをセラミック
基板上に複数載置して一画素を形成するLEDディスプ
レイにおいて、LEDチップの短波長の発光が吸収され
るのを少なくしてLEDディスプレイの光度を向上さ
せ、特に赤色、緑色、青色LEDチップと三原色揃った
LEDディスプレイの青色LEDの外部量子効率を改良
してディスプレイの光度を向上させる。 【構成】 導電体層2が形成されたグリーンシート1が
積層されてなるセラミック基板上に複数のLEDチップ
が載置され、LEDチップは短波長のLEDチップの発
光部の高さが、長波長のLEDチップの発光部の高さよ
りも高くなるように載置されており、さらにそのLED
チップの高さがグリーンシート1の高さにより調整され
たLEDディスプレイ。
(57) [Abstract] [Purpose] In an LED display in which a plurality of LED chips having different emission wavelengths are mounted on a ceramic substrate to form one pixel, it is possible to reduce absorption of short-wavelength light emitted from the LED chips. The luminous intensity of an LED display is improved, and in particular, the external quantum efficiency of a blue LED of an LED display having red, green, and blue LED chips and three primary colors aligned is improved to improve the luminous intensity of the display. [Structure] A plurality of LED chips are mounted on a ceramic substrate formed by stacking green sheets 1 having a conductor layer 2 formed thereon. It is mounted so that it is higher than the height of the light emitting part of the LED chip of
An LED display in which the height of the chip is adjusted by the height of the green sheet 1.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はグリーンシートが積層さ
れてなるセラミック基板上に、発光色の異なるLED
(発光ダイオード)チップが載置されてなるLEDディ
スプレイに係り、特に青色、緑色、および赤色の3原色
のLEDで一画素が形成されたフルカラーLEDディス
プレイに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an LED having different emission colors on a ceramic substrate formed by laminating green sheets.
The present invention relates to an LED display on which a (light emitting diode) chip is mounted, and particularly to a full-color LED display in which one pixel is formed of LEDs of three primary colors of blue, green, and red.

【0002】[0002]

【従来の技術】看板、広告塔等の平面型ディスプレイに
はLEDが使用されている。LEDディスプレイには大
別して、樹脂モールドしたLEDを平面上に並べたもの
と、LEDチップを基板上に載置して電極を接続し、そ
の上から樹脂モールドしたものとが知られている。その
中でも後者のLEDディスプレイは一画素を小さく構成
でき、解像度の高い画面が実現できるので将来を嘱望さ
れている。
2. Description of the Related Art LEDs are used in flat displays such as signboards and advertising towers. LED displays are roughly classified into those in which resin-molded LEDs are arranged on a plane, and those in which an LED chip is placed on a substrate and electrodes are connected to each other and then resin-molded. Among them, the latter LED display can be constructed in a small size of one pixel and can realize a high resolution screen, so that it is expected in the future.

【0003】後者のLEDディスプレイにおいて、LE
Dチップが載置されるセラミック基板は、導電体層が表
面に形成されたグリーンシートが積層されてなってい
る。グリーンシートとは、例えばアルミナ、窒化アル
ミ、炭化ケイ素等の絶縁性材料が数十μm〜数百μmの
厚さでシート状にされたものであり、そのグリーンシー
ト表面には数μm〜十数μmの厚さでW、Mo、Agペ
ースト等の導電性材料が導電体層としてパターン形成さ
れている。LEDチップはこのグリーンシートの最表面
の導電体層に電気的に接続され、配線パターンはグリー
ンシートが積層されて各層間の導電体層で形成され、デ
ィスプレイはこれらを組み合わせて文字表示、マルチカ
ラー等を実現している。
In the latter LED display, LE
The ceramic substrate on which the D chip is mounted is formed by stacking green sheets having a conductor layer formed on the surface thereof. The green sheet is, for example, an insulating material such as alumina, aluminum nitride, or silicon carbide formed into a sheet with a thickness of several tens μm to several hundreds μm, and the surface of the green sheet has several μm to several tens of μm. A conductive material such as W, Mo, or Ag paste is patterned as a conductor layer with a thickness of μm. The LED chip is electrically connected to the outermost conductor layer of the green sheet, and the wiring pattern is formed by stacking the green sheets to form the conductor layers between the layers. The display is a combination of these for displaying characters and multi-color. And so on.

【0004】図3に従来のLEDディスプレイの一画素
の構造を表す模式断面図を示す。11はグリーンシー
ト、2が導電体層であり、表面に導電体層2の形成され
たグリーンシート11a、11bを積層したセラミック
基板の同一面上に赤色LEDチップ(R)と緑色LED
チップ(G)とを載置して一画素を構成した構造として
いる。赤色チップR、緑色LEDチップGには例えばG
aAs、GaP、GaAlAs、GaAsP等の半導体
材料が使用されている。グリーンシート11にはコント
ラストを上げるために例えば酸化クロム、チタニア等の
着色剤が添加されることが多い。なお3はキャビティー
を構成するためのカバー部材であり、例えば樹脂、積層
したグリーンシート等が使用されている。
FIG. 3 is a schematic sectional view showing the structure of one pixel of a conventional LED display. Reference numeral 11 is a green sheet, 2 is a conductor layer, and a red LED chip (R) and a green LED are provided on the same surface of a ceramic substrate on which green sheets 11a and 11b on which the conductor layer 2 is formed are laminated.
The chip (G) is placed to form one pixel. For the red chip R and the green LED chip G, for example, G
Semiconductor materials such as aAs, GaP, GaAlAs and GaAsP are used. A coloring agent such as chromium oxide or titania is often added to the green sheet 11 in order to increase the contrast. Reference numeral 3 is a cover member for forming the cavity, and is made of resin, laminated green sheets, or the like.

【0005】[0005]

【発明が解決しようとする課題】図3に示すように、同
一面上に異なる材料からなるLEDチップを載置した場
合、材料のバンドギャップエネルギーの違いにより、短
波長のLEDチップの発光の一部が長波長のLEDチッ
プに吸収され、短波長LEDの外部量子効率が低下する
という問題がある。例えばGaP系の材料よりなる緑色
LEDの発光はGaAs系の材料よりなる赤色LEDに
吸収される。
As shown in FIG. 3, when LED chips made of different materials are mounted on the same surface, the difference in bandgap energy between the materials causes a short emission of light from the LED chips having a short wavelength. There is a problem that the external quantum efficiency of the short-wavelength LED is reduced because the part is absorbed by the long-wavelength LED chip. For example, the emission of a green LED made of a GaP-based material is absorbed by a red LED made of a GaAs-based material.

【0006】ところで、従来のLEDディスプレイは青
色LEDがなかったため、図3に示すように赤色LED
と緑色LEDよりなるマルチカラーのディスプレイであ
ったが、昨年11月下旬、本出願人は赤色LEDの光度
に匹敵する光度1cd以上の青色LEDを発表し、ディ
スプレイのフルカラー化が可能となってきた。その青色
LEDは窒化ガリウム系化合物半導体(InXAlYGa
1-X-YN、0≦X≦1、0≦Y≦1、X=Y≠1)よりな
り、およそ450nm〜480nmに発光ピークを有す
る。
By the way, since the conventional LED display does not have a blue LED, as shown in FIG.
It was a multi-color display consisting of a green LED and a green LED, but in late November last year, the applicant announced a blue LED with a luminous intensity of 1 cd or more, which is comparable to that of a red LED, and it has become possible to make the display full color. . The blue LED is a gallium nitride-based compound semiconductor (In X Al Y Ga
1-XY N, 0 ≦ X ≦ 1, 0 ≦ Y ≦ 1, X = Y ≠ 1, and has an emission peak at about 450 nm to 480 nm.

【0007】青色LEDチップを加え、フルカラーLE
Dディスプレイを実現した場合、前記のように同一面上
に3色のLEDチップを並べると、青色LEDチップの
発光の一部が他の発光色のLED材料に吸収されてしま
う。例えば窒化ガリウム系化合物半導体よりなる青色L
EDチップの発光はそのバンドギャップエネルギーの違
いからGaP系の緑色LED、GaAs系の赤色LED
両材料に吸収される。緑色LEDの波長は視感度がよい
ため、発光が一部赤色LEDに吸収されてもほとんど目
には感じないが特に500nm以下の青色LEDの波長
は視感度が悪いので、できるだけ吸収を避けた方が好ま
しい。
Full color LE by adding blue LED chip
When the D display is realized, if the LED chips of three colors are arranged on the same surface as described above, a part of the light emission of the blue LED chip is absorbed by the LED materials of other emission colors. For example, blue L made of gallium nitride compound semiconductor
The light emission of the ED chip is GaP green LED and GaAs red LED due to the difference in bandgap energy.
It is absorbed by both materials. Since the wavelength of the green LED has good luminosity, even if some of the emitted light is absorbed by the red LED, it hardly feels to the eyes, but especially the wavelength of the blue LED of 500 nm or less has poor luminosity, so avoid absorption as much as possible. Is preferred.

【0008】さらに、各LEDチップが載置される導電
体層の表面は、LEDチップの電極と導電体層との接着
性を高めるため、金メッキされているものが多い。しか
し、青色LEDを用いた場合、金は500nm以下の波
長の反射率が低いので、青色LEDの発光を吸収すると
いう欠点がある。
Further, the surface of the conductor layer on which each LED chip is mounted is often gold-plated in order to enhance the adhesion between the electrode of the LED chip and the conductor layer. However, when a blue LED is used, gold has a low reflectance at a wavelength of 500 nm or less, and thus has a drawback of absorbing the light emitted from the blue LED.

【0009】従って、本発明はこのような事情を鑑みて
成されたものであり、その目的とするところは、発光波
長の異なるLEDチップをセラミック基板上に複数載置
して一画素を形成するLEDディスプレイにおいて、L
EDチップの短波長の発光が吸収されるのを少なくして
LEDディスプレイの光度を向上させることにあり、特
に赤色、緑色、青色LEDチップと三原色揃ったLED
ディスプレイの青色LEDの外部量子効率を改良してデ
ィスプレイの光度を向上させることにある。
Therefore, the present invention has been made in view of such circumstances, and an object thereof is to mount a plurality of LED chips having different emission wavelengths on a ceramic substrate to form one pixel. In LED display, L
It is to improve the luminous intensity of the LED display by reducing the absorption of the short wavelength light emitted from the ED chip, and in particular the red, green, and blue LED chips and the LEDs in the three primary colors.
It is to improve the external quantum efficiency of the blue LED of the display to improve the luminous intensity of the display.

【0010】[0010]

【課題を解決するための手段】本発明のLEDディスプ
レイは、表面に導電体層が形成されたグリーンシートが
積層されてなるセラミック基板上に、発光波長の異なる
複数のLEDチップが載置されて一画素が構成されたL
EDディスプレイにおいて、前記LEDチップは短波長
のLEDチップの発光部の高さが、長波長のLEDチッ
プの発光部の高さよりも高くなるように載置されてお
り、さらにそのLEDチップの高さが実質的にグリーン
シートの高さにより調整されていることを特徴とする。
つまり青色LEDの発光部の高さを、積層したグリーン
シートの高さで調整して最も高くすることにより、上記
問題を解決できる。
In the LED display of the present invention, a plurality of LED chips having different emission wavelengths are mounted on a ceramic substrate formed by laminating green sheets having a conductor layer formed on the surface thereof. L consisting of one pixel
In the ED display, the LED chip is mounted such that the height of the light emitting portion of the short wavelength LED chip is higher than the height of the light emitting portion of the long wavelength LED chip, and the height of the LED chip is higher. Is substantially adjusted by the height of the green sheet.
That is, the above problem can be solved by adjusting the height of the light emitting portion of the blue LED to be the highest by adjusting the height of the stacked green sheets.

【0011】さらに、前記LEDチップを包囲するグリ
ーンシート面は白色であることが好ましい。特に一画素
に500nm以下に発光する青色LEDチップを含む場
合には、その青色LEDチップを載置するセラミック基
板面、つまりグリーンシート表面にある導電体層面の5
00nm〜360nmの波長域における反射率が60%
以上になるように調整することが好ましい。
Further, the green sheet surface surrounding the LED chip is preferably white. In particular, when one pixel includes a blue LED chip emitting light of 500 nm or less, the surface of the ceramic substrate on which the blue LED chip is mounted, that is, the surface of the conductor layer on the surface of the green sheet is
60% reflectance in the wavelength range of 00 nm to 360 nm
It is preferable to adjust the above.

【0012】[0012]

【作用】本発明のLEDディスプレイでは短波長のLE
Dチップの発光部の高さを、長波長のLEDチップの発
光部の高さよりも高くすることにより、短波長の発光が
長波長のLED材料に吸収されることがないので、短波
長のLEDの外部量子効率が向上する。しかもそのLE
Dの発光部の高さが実質的にグリーンシートの高さで調
整されている。LEDディスプレイのLEDチップは、
一般に打ち抜きにより形成されたグリーンシートのキャ
ビティー(開口部)内に収容して載置される。さらにキ
ャビティーが設けられたグリーンシートを積層すること
によりその開口部の深さを自由に調整できる。従ってL
EDを収容するグリーンシートの高さで実質的な発光部
の高さを調整すると、例えばスペーサーを介して調整す
る方法に比べて、直接LEDチップの高さを調整できる
ので、生産性にも優れている。
The LED display of the present invention has a short wavelength LE.
By making the height of the light emitting portion of the D chip higher than the height of the light emitting portion of the long wavelength LED chip, short wavelength light is not absorbed by the long wavelength LED material. The external quantum efficiency of is improved. And that LE
The height of the light emitting portion of D is adjusted substantially by the height of the green sheet. The LED chip of the LED display is
Generally, it is housed and placed in the cavity (opening) of the green sheet formed by punching. Further, by stacking green sheets provided with cavities, the depth of the opening can be freely adjusted. Therefore L
Adjusting the substantial height of the light emitting part with the height of the green sheet that houses the ED allows the height of the LED chip to be adjusted directly compared to the method of adjusting via a spacer, which is also excellent in productivity. ing.

【0013】さらにキャビティー内に収容されたLED
チップを包囲するグリーンシート面を白色にすることに
より、LED発光がその白色面で反射されるのでさらに
発光効率が向上する。グリーンシート面を白色とするに
は例えば無着色の白色グリーンシートを積層することで
実現できるが、またその他酸化チタン、硫酸バリウム、
酸化マグネシウム、アルミナ等の可視光の反射率が高い
白色物質を塗布してもよい。最も好ましくは、その白色
面の反射率も500nm〜360nmの波長域において
60%以上を実現すると、青色LEDを載置した場合に
おいてディスプレイの光度が向上する。
Further, the LED housed in the cavity
By making the surface of the green sheet surrounding the chip white, the LED emission is reflected by the white surface, so that the luminous efficiency is further improved. To make the green sheet surface white, for example, it can be realized by stacking uncolored white green sheets, but in addition, titanium oxide, barium sulfate,
A white material having high visible light reflectance such as magnesium oxide or alumina may be applied. Most preferably, when the reflectance of the white surface is also 60% or more in the wavelength range of 500 nm to 360 nm, the luminous intensity of the display is improved when the blue LED is mounted.

【0014】さらに一画素中に500nm以下に発光す
る青色LEDチップを含む場合、青色LEDチップを載
置するセラミック基板面、つまりグリーンシート上に形
成された導電体層表面の500nm〜360nmの波長
域における反射率を60%以上に調整することにより、
LED載置面で青色発光を反射させることができる。前
にも述べたように、従来のグリーンシート表面には一般
にW、Mo、Agペースト等の導電性材料が印刷されて
パターン形成され、これらの材料とLEDチップとの接
着性を高める目的で、この導電体層の表面にAuメッキ
が施されている。しかしながら青色LEDを用いた場
合、導電体層がAuメッキされていると、Auは500
nm〜360nmの青色領域の反射率が低く、例えば5
0%以下でしかない。従って青色LEDを用いて新規な
フルカラーLEDディスプレイが実現された場合、LE
Dチップを載置する導電性体層の反射率を60%以上に
することにより、視感度の悪い青色発光の外部量子効率
を向上できる。500nm〜360nmの反射率が60
%以上を示す材料として、例えばAl、Ag、Pt、N
i等の金属を好ましく用いることができ、これらの材料
を導電体層にメッキ、または蒸着することにより、LE
Dを載置する導電体層面の反射率を前記範囲に調整でき
る。また青色LEDを載置して、前記のようにLEDを
包囲するグリーンシート面を白色する場合、その白色面
の反射率を前記範囲内にすることは言うまでもない。な
お、本発明において、反射率とは種々の波長の光が垂直
に投射された場合の絶対反射率をいう。
When one pixel includes a blue LED chip which emits light of 500 nm or less, the wavelength range of 500 nm to 360 nm on the surface of the ceramic substrate on which the blue LED chip is mounted, that is, the surface of the conductor layer formed on the green sheet. By adjusting the reflectance at 60% or more,
Blue light can be reflected on the LED mounting surface. As described above, the surface of the conventional green sheet is generally printed with a conductive material such as W, Mo, or Ag paste to form a pattern, and for the purpose of enhancing the adhesiveness between these materials and the LED chip, The surface of this conductor layer is plated with Au. However, when a blue LED is used, Au is 500 when the conductor layer is plated with Au.
nm to 360 nm has a low reflectance in the blue region, for example, 5
Only 0% or less. Therefore, if a new full-color LED display is realized using blue LEDs, LE
By setting the reflectance of the conductive layer on which the D chip is mounted to 60% or more, the external quantum efficiency of blue light emission with poor visibility can be improved. The reflectance of 500 nm to 360 nm is 60
%, A material having a content of, for example, Al, Ag, Pt, N
Metals such as i can be preferably used, and by plating or vapor depositing these materials on the conductor layer, LE
The reflectance of the surface of the conductor layer on which D is placed can be adjusted within the above range. In addition, when the blue LED is mounted and the surface of the green sheet surrounding the LED is whitened as described above, it goes without saying that the reflectance of the white surface is set within the above range. In the present invention, the reflectance means the absolute reflectance when light of various wavelengths is vertically projected.

【0015】[0015]

【実施例】以下本発明の一実施例のLEDディスプレイ
を図面を元に説明する。図1は本発明の一LEDディス
プレイをキャビティー側から見た平面図であり、図2は
図1の平面図を一点鎖線で切断した際の模式断面図であ
る。これらの図はいずれもディスプレイの一画素の一構
造を示し、同一符号は同一部材を示している。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An LED display according to an embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a plan view of an LED display of the present invention viewed from the cavity side, and FIG. 2 is a schematic cross-sectional view of the plan view of FIG. 1 taken along the alternate long and short dash line. Each of these drawings shows one structure of one pixel of the display, and the same reference numerals indicate the same members.

【0016】このディスプレイは一画素がおよそ460
nmに発光するGaN系の材料よりなる青色LEDチッ
プBと、およそ550nmに発光するGaP系の材料よ
りなる緑色LEDチップGと、およそ660nmに発光
するGaAs系の材料よりなる赤色LEDチップRと各
々1個ずつよりなり、これらLEDチップが直線上に並
べられている。
This display has about 460 pixels.
a blue LED chip B made of a GaN-based material that emits light of about 550 nm, a green LED chip G made of a GaP-based material that emits light at about 550 nm, and a red LED chip R made of a GaAs-based material that emits light at about 660 nm. Each LED chip is arranged in a straight line.

【0017】これらLEDチップは、白色の酸化アルミ
ニウムよりなる厚さおよそ200μmのグリーンシート
1a、1bおよび1cを積層したセラミック基板上に載
置されている。グリーンシート1a、1b、1cはその
表面にタングステンがそれぞれ数μmの厚さでパターン
印刷された導電体層2a、2b、2cを有し、さらに2
aおよび2bの表面には数μmの厚さでAuメッキが施
され、2cの表面にはAlが蒸着されている。なおAl
の蒸着面の反射率は360nm〜500nmの範囲で9
0%以上ある。これら導電体層2の形成されたグリーン
シートは打ち抜きにより所定の形状の孔が打ち抜かれ、
孔の形成されたグリーンシートを積層することにより、
図2に示すような段差のあるセラミック基板ができあが
る。
These LED chips are mounted on a ceramic substrate on which green sheets 1a, 1b and 1c made of white aluminum oxide and having a thickness of about 200 μm are laminated. The green sheets 1a, 1b, 1c have conductor layers 2a, 2b, 2c on each surface of which tungsten is pattern-printed with a thickness of several μm.
The surfaces of a and 2b are Au-plated with a thickness of several μm, and Al is deposited on the surface of 2c. Al
The reflectance of the vapor deposition surface of is 9 in the range of 360 nm to 500 nm.
There is 0% or more. The green sheet on which the conductor layer 2 is formed has a hole of a predetermined shape punched out,
By stacking green sheets with holes,
A stepped ceramic substrate as shown in FIG. 2 is completed.

【0018】一画素を構成する同一キャビティー内に段
差の設けられた前記セラミック基板の下層の導電体層2
aの上に赤色LEDチップRを載置し、同じく中層の導
電体層2bの上に緑色LEDチップGを載置し、上層の
導電体層2cの上に青色LEDチップGを載置する。な
おB1は青色LEDチップBの発光部、G1は緑色LED
チップGの発光部、R1は赤色LEDチップの発光部を
示している。
A conductor layer 2 below the ceramic substrate provided with a step in the same cavity forming one pixel.
The red LED chip R is mounted on a, the green LED chip G is mounted on the middle conductor layer 2b, and the blue LED chip G is mounted on the upper conductor layer 2c. B1 is a light emitting part of the blue LED chip B, and G1 is a green LED.
The light emitting portion of the chip G and R1 indicate the light emitting portion of the red LED chip.

【0019】このようにして短波長のLEDチップの発
光部を長波長のLEDチップの発光部よりも高くするこ
とにより、短波長の発光が長波長に発光するLEDチッ
プの材料に吸収されることがなくなるので、ディスプレ
イの光度が向上する。特に、図に示すように同一キャビ
ティー内に波長の異なる複数のLEDチップを載置する
場合にその効果が大きい。
By thus making the light emitting portion of the short wavelength LED chip higher than the light emitting portion of the long wavelength LED chip, the short wavelength light emission is absorbed by the material of the LED chip emitting the long wavelength light. The light intensity of the display is improved because there is no light. In particular, the effect is great when a plurality of LED chips having different wavelengths are mounted in the same cavity as shown in the figure.

【0020】またLEDチップを包囲した着色剤を含ま
ない白色の酸化アルミニウムは500nm以下の青色領
域において反射率が高いので、青色LEDは言うにおよ
ばず、緑色LED、および赤色LEDの発光をも含め
て、キャビティー内で発光が吸収されることが少ない。
さらに短波長のLEDチップの高さを高くしてあるの
で、グリーンシート面で反射された短波長の光は同一キ
ャビティー内にある長波長のLED材料に吸収されるこ
とが少ないという効果も合わせ持つ。
Further, since the colorant-free white aluminum oxide that surrounds the LED chip has a high reflectance in the blue region of 500 nm or less, not only the blue LED but also the light emission of the green LED and the red LED is included. As a result, light emission is less likely to be absorbed in the cavity.
Furthermore, since the height of the short-wavelength LED chip is increased, the short-wavelength light reflected by the green sheet surface is less likely to be absorbed by the long-wavelength LED material in the same cavity. To have.

【0021】また、青色LEDチップGを載置する導電
体層2cの表面を、例えばAlのような反射率の高い金
属で被覆しているために、青色発光が導電体層面におい
て吸収されるのを防ぐことができる。
Further, since the surface of the conductor layer 2c on which the blue LED chip G is mounted is coated with a highly reflective metal such as Al, blue light emission is absorbed by the conductor layer surface. Can be prevented.

【0022】なお付言すると、本発明のLEDディスプ
レイにおいて一画素を構成する各発光色のLEDチップ
の数はこれらの図に示すように一個ずつでなくてもよ
く、各LEDの光度により自由に変更でき、並べ方は直
線上でなくてもΔ(デルタ)配列等自由に変更できるこ
とは言うまでもない。またコントラストを向上させる目
的で図1および図3に示すカバー部材3の発光観測面側
の表面を黒色にしてもよい。
It should be noted that, in the LED display of the present invention, the number of LED chips of each luminescent color forming one pixel does not have to be one as shown in these figures, and can be freely changed according to the luminous intensity of each LED. Needless to say, the arrangement can be freely changed even if the arrangement is not linear. The surface of the cover member 3 shown in FIGS. 1 and 3 on the light emission observation surface side may be black for the purpose of improving the contrast.

【0023】[0023]

【発明の効果】以上説明したように、本発明のLEDデ
ィスプレイは各LEDの発光部の高さがLEDを載置す
るグリーンシートの高さにより調整されているので、ス
ペーサー等を介しなくても簡単にその高さが調整でき生
産性に優れている。さらに、短波長のLEDチップの高
さを高くして、他の材料に吸収されなくしてあるのでデ
ィスプレイの光度が向上する。特に青色LEDを用いた
場合ではその効果が大きく、今後フルカラーLEDディ
スプレイを実現する上でその意義は多大である。
As described above, in the LED display of the present invention, since the height of the light emitting portion of each LED is adjusted by the height of the green sheet on which the LED is mounted, it is not necessary to use a spacer or the like. Its height can be easily adjusted and it has excellent productivity. In addition, the short-wavelength LED chip is increased in height so that it is not absorbed by other materials, which improves the luminous intensity of the display. Especially, when the blue LED is used, its effect is great, and its significance will be great in realizing a full-color LED display in the future.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の一LEDディスプレイをキャビティ
ー側から見た平面図。
FIG. 1 is a plan view of an LED display of the present invention viewed from a cavity side.

【図2】 図1の平面図を一点鎖線で切断した際の模式
断面図。
FIG. 2 is a schematic cross-sectional view of the plan view of FIG. 1 taken along the alternate long and short dash line.

【図3】 従来のLEDディスプレイの構造を示す模式
断面図。
FIG. 3 is a schematic cross-sectional view showing the structure of a conventional LED display.

【符号の説明】[Explanation of symbols]

1・・・・グリーンシート 2・・・・導電体層 3・・・・カバー部材 1 ... Green sheet 2 ... Conductor layer 3 ... Cover member

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 表面に導電体層が形成されたグリーンシ
ートが積層されてなるセラミック基板上に、発光波長の
異なる複数のLEDチップが載置されて一画素が構成さ
れたLEDディスプレイにおいて、前記LEDチップは
短波長のLEDチップの発光部の高さが、長波長のLE
Dチップの発光部の高さよりも高くなるように載置され
ており、さらにそのLEDチップの高さは実質的にグリ
ーンシートの高さにより調整されていることを特徴とす
るLEDディスプレイ。
1. An LED display in which a plurality of LED chips having different emission wavelengths are mounted on a ceramic substrate formed by laminating a green sheet having a conductor layer formed on the surface thereof to form one pixel. The height of the light emitting part of the LED chip of the short wavelength is LE of the long wavelength.
An LED display, wherein the LED chip is mounted so as to be higher than the light emitting portion of the D chip, and the height of the LED chip is substantially adjusted by the height of the green sheet.
【請求項2】 前記LEDチップを包囲するグリーンシ
ート面が白色であることを特徴とする請求項1に記載の
LEDディスプレイ。
2. The LED display according to claim 1, wherein a green sheet surface surrounding the LED chip is white.
【請求項3】 前記セラミック基板には500nm以下
の波長に青色発光する青色LEDチップが載置されてお
り、さらにその青色LEDチップが載置されるセラミッ
ク基板面の500nm〜360nmの波長域における反
射率が60%以上であることを特徴とする請求項1また
は請求項2に記載のLEDディスプレイ。
3. A blue LED chip that emits blue light having a wavelength of 500 nm or less is mounted on the ceramic substrate, and the reflection of the surface of the ceramic substrate on which the blue LED chip is mounted is reflected in a wavelength range of 500 nm to 360 nm. The LED display according to claim 1 or 2, wherein the ratio is 60% or more.
JP6983694A 1994-04-08 1994-04-08 LED display Expired - Fee Related JP3351447B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6983694A JP3351447B2 (en) 1994-04-08 1994-04-08 LED display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6983694A JP3351447B2 (en) 1994-04-08 1994-04-08 LED display

Publications (2)

Publication Number Publication Date
JPH07283438A true JPH07283438A (en) 1995-10-27
JP3351447B2 JP3351447B2 (en) 2002-11-25

Family

ID=13414284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6983694A Expired - Fee Related JP3351447B2 (en) 1994-04-08 1994-04-08 LED display

Country Status (1)

Country Link
JP (1) JP3351447B2 (en)

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