JP5471805B2 - Light emitting device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a structure of a light-emitting element that emits light using a semiconductor as a constituent material, and a manufacturing method thereof.

  Lighting devices using semiconductor light emitting diodes (LEDs) are expected to be replaced in the future because of their low power consumption and low heat generation compared to conventional incandescent bulbs and fluorescent lamps. However, since LED lighting equipment is very expensive at present compared to incandescent bulbs, fluorescent lamps, etc., the most important issue is to reduce the price.

  On the other hand, since it is difficult to manufacture a large-area LED having a semiconductor pn junction as a light emitting surface, in order to use it as a lighting device, a large number of small LED elements are arranged substantially. It is necessary to have a large area. For this reason, in order to reduce the price of LED lighting equipment, it is important to have a manufacturing technique in which a large number of small LED elements are arranged with their luminous efficiency kept high.

  Patent Document 1 describes a manufacturing method of this example. Here, after a large number of light emitting diodes are formed in one semiconductor wafer, the semiconductor wafer is diced (cut) on a dicing tape in order to separate the individual light emitting diodes. Thereafter, the space between the light emitting diodes expanded by expanding the dicing tape is filled with a translucent insulating layer. FIG. 7 shows a cross-sectional shape of the light emitting device 90 manufactured by this manufacturing method. In the light emitting element 90, an electrode 93 is formed on the upper and lower surfaces of a semiconductor layer 91 having a light emitting layer therein via a conductive adhesive layer 92, and a light transmissive insulating layer 94 is formed on a side surface. The semiconductor layer 91 is made of GaN or the like, and its n-type layer and p-type layer are stacked in the vertical direction in the figure. The light emitting layer is mainly near the pn junction interface. The n-type layer and the p-type layer are respectively connected to the upper and lower electrodes 93, and the light emitting element 90 emits light when a forward current of the light emitting diode flows between the upper and lower electrodes 93.

  A large number of light-emitting elements 90 having this structure are produced from one semiconductor wafer, which are arranged in a desired form to form a lighting fixture.

Japanese Patent Laid-Open No. 10-144631

  In the light emitting element 90 having the structure of FIG. 7, the conductive adhesive layer 92 and the electrode 93 are not transparent to the light emitted from the light emitting diode. For this reason, when the light emitting element 90 is used, light emission is extracted from the side surface through the translucent insulating layer 94 as indicated by an arrow in FIG. However, since the light emitting layer in the semiconductor layer 91 is a pn junction interface extending in the left-right direction in FIG. 7, the light emission intensity is particularly high in the up-down direction in the figure and weak in the left-right direction. For this reason, it is difficult to increase the light emission efficiency with the structure of FIG.

  Further, if the conductive adhesive layer 92 and the electrode 93 are made of a transparent material in the structure shown in FIG. 7, light can be extracted from above. However, when electrical connection is made from the outside to the upper electrode 93 in FIG. 7, for example, wire bonding or solder bonding is performed on the electrode 93, that is, wiring made of metal is connected by these methods. It will be necessary. For this reason, even in this case, light emitted upward is blocked by the wiring and solder. At this time, there is a lower limit to the thickness of the wiring and the size of the electrode to which wire bonding or solder bonding is performed, and it is difficult to reduce the area of the light shielding region. After all, it is difficult to extract light emitted upward with high efficiency.

  Thus, it has been difficult to obtain a light emitting element that can extract light with high efficiency.

  The present invention has been made in view of such problems, and an object thereof is to provide an invention that solves the above problems.

In order to solve the above problems, the present invention has the following configurations.
The light-emitting element of the present invention is a light-emitting element using a light-emitting diode having a rectangular structure in which a semiconductor layer having a light-emitting layer provided therein is formed on a substrate, the light-emitting diode and the rectangular A light-transmitting insulating layer formed adjacent to a side surface of the semiconductor layer and the substrate constituting the body shape, covering an upper surface of the light-emitting diode and an upper surface of the light-transmitting insulating layer, and one of the light-emitting diodes A transparent electrode electrically connected to the electrode; and an electrode pad formed on a region of the transparent electrode that is an upper surface of the translucent insulating layer .
In the light-emitting element of the present invention, the substrate is a silicon single crystal, and the semiconductor layer includes an n-type semiconductor layer and a p-type semiconductor layer made of a III-V group compound semiconductor material.
In the light emitting device of the present invention, the substrate is conductive, and a back electrode electrically connected to the other electrode of the light emitting diode is formed on the lower surface of the substrate.
The light emitting device of the present invention comprises two sets of the transparent electrode and the electrode pad respectively electrically connected to one pole and the other pole of the light emitting diode on the upper surface side of the semiconductor layer. Features.
The light-emitting element of the present invention is characterized in that a fluorescent material is mixed in the light-transmitting insulating layer .

  Since the present invention is configured as described above, a light-emitting element that can extract light with high efficiency can be obtained.

It is the perspective view (a) of the light emitting element concerning embodiment of this invention, and sectional drawing (b) in the AA direction. It is process sectional drawing which shows the manufacturing method of the light emitting element which concerns on embodiment of this invention. It is process sectional drawing (continuation of FIG. 2) which shows the manufacturing method of the light emitting element which concerns on embodiment of this invention. It is the figure which looked at each process of the manufacturing method of the light emitting element concerning embodiment of this invention from the upper surface. It is the figure (continuation of FIG. 4) which looked at each process of the manufacturing method of the light emitting element which concerns on embodiment of this invention from the upper surface. It is the perspective view (a), top view (b), and sectional drawing (c) in the BB direction of the modification of the light emitting element which concerns on embodiment of this invention. It is sectional drawing of an example of the conventional light emitting element.

  Hereinafter, a light emitting device and a method for manufacturing the same according to an embodiment of the present invention will be described. In this light emitting element, a light emitting diode having a light emitting layer formed in a semiconductor layer is used. A translucent insulating layer is formed adjacent to the side surface of the light emitting diode, and the upper surface of the light emitting diode and the upper surface of the translucent insulating layer are covered with a common transparent electrode. An electrode pad is formed in a region on the transparent electrode which becomes the upper surface of the translucent insulating layer. Since the upper surface of the light emitting diode is one of the poles of the light emitting diode, this electrode pad is electrically connected to this pole. In this structure, light emission from the light emitting diode is rarely blocked, so that high light emission efficiency can be obtained.

  FIG. 1 is a perspective view (a) of the light emitting device and a cross-sectional view (b) in the AA direction.

  In the light emitting element 10, a light emitting diode 20 is used. The light emitting diode 20 is formed of a conductive substrate (Si substrate 21) and a semiconductor layer formed thereon by epitaxial growth. This semiconductor layer includes an n-type GaN layer (n-type semiconductor layer) 22 and a p-type GaN layer (p-type semiconductor layer) 23. In the light emitting diode 20, the vicinity of the pn junction at the interface between the n-type GaN layer 22 and the p-type GaN layer 23 is a main light emitting layer. At this time, the light emitting diode 20 can emit light by passing a forward current through the pn junction.

  As shown in FIG. 1B, a translucent insulating layer 30 is formed adjacent to the side surface of the light emitting diode 20. The translucent insulating layer 30 is a material that is transparent and insulating with respect to light emitted from the light emitting diode 20, for example, and an epoxy resin, polyimide, or the like is used.

  A back electrode 41 is formed on the lower surface of the structure in which the light emitting diode 20 and the translucent insulating layer 30 are formed adjacent to each other, and a transparent electrode 42 is formed on the upper surface. The back electrode 41 is made of, for example, aluminum (Al) as a material that can be electrically connected to the n-type GaN layer 22 via the Si substrate 21. The transparent electrode 42 can be in ohmic contact with the p-type GaN layer 23 and is made of, for example, ITO (Indium-Tin-Oxide), ZnO (Zinc-Oxide), or the like as a transparent material with respect to the light emitted from the light emitting diode 20. Composed. In order to improve the ohmic property with the p-type GaN layer 23 and the adhesion with the light-transmitting insulating layer 30, a thin titanium (Ti) layer or nickel (Ni) layer is interposed between them. It can also be inserted.

  In this configuration, the upper surfaces of the light emitting diode 20 and the translucent insulating layer 30 are both covered with the common transparent electrode 42. However, since the translucent insulating layer 30 is insulative, current flows only in the Si substrate 21, the n-type GaN layer 22, and the p-type GaN layer 23 in this structure. For this reason, this light emitting diode 20 can be made to light-emit by applying a voltage to the back surface electrode 41 and the transparent electrode 42, and letting this light emitting diode 20 be a forward direction, and let an electric current flow.

  An electrode pad 43 is formed in a region on the translucent insulating layer 30 in the transparent electrode 42. The electrode pad 43 is made of a metal that can be wire-bonded or soldered thereon, and is made of, for example, a laminated structure of titanium (Ti) / gold (Au), Al, or the like. The thickness thereof is sufficiently thick so that wire bonding or solder bonding can be performed thereon, and can be made thick enough not to transmit light emitted from the light emitting diode 20.

  In order to operate the light emitting element 10, a forward current flows between one pole (p-type GaN layer 23) and the other pole (n-type GaN layer 22) in the light emitting diode 20. Among these, the p-type GaN layer 23 can be supplied with an electric current from the outside through the bonding wire or the soldered wiring from the electrode pad 43 connected thereto as described above. On the other hand, for the n-type GaN layer 22, if the light emitting element 10 is fixed on the electrode with, for example, a conductive adhesive, a current can be passed through the back electrode 41 indirectly connected thereto. It is.

  In the above structure, the light emission from the light emitting diode 20 is extracted from the lateral direction in FIG. 1B as in the technique described in Patent Document 1, but is further extracted from the upper side through the transparent electrode 42. It is. At this time, since the electrode pad 43 is not formed on the light emitting diode 20, light is not blocked by the electrode pad 43, a bonding wire connected to the electrode pad 43, solder, a soldered wiring, or the like. . For this reason, high luminous efficiency can be obtained.

  At this time, if the electrode pad 43 is made of Al, silver (Ag), or the like having a high reflectance with respect to light, the proportion of light absorbed by the electrode pad 43 can be reduced, and the luminous efficiency can be further increased. Can do.

  1 has a configuration in which the light emitting diode 20 is provided on one apex side of the rectangle as viewed from above, the light emitting diode 20 is provided at the center of the rectangle and the entire periphery thereof is provided. It is also possible to have a configuration in which the light-transmitting insulating layer 30 surrounds.

  In addition, the material constituting the light-transmitting insulating layer 30 may be a fluorescent material instead of a transparent material having a high light transmittance, or a fluorescent material may be mixed therein. In this case, the fluorescent material absorbs the light emitted from the light emitting diode 20, and the fluorescent material can emit multicolor light that emits light having a wavelength different from that of the emitted light. For example, when the light emitted from the light emitting diode is blue, if a YAG (yttrium, aluminum, garnet) fluorescent material is used, it is also possible to obtain pseudo white light emission in which light of these two wavelengths is mixed. is there.

  Further, when wire bonding is applied to the electrode pad 43 on the translucent insulating layer 30, a high pressure or ultrasonic wave is applied. If a glass filler or the like is added to the light-transmitting insulating layer 30 to cope with these, the mechanical strength of the light-transmitting insulating layer 30 can be increased and the resistance during wire bonding can be increased. Further, it is possible to improve the adhesion between the transparent electrode 42 by providing irregularities on the surface of the light-transmitting insulating layer 30.

  The light emitting element 10 having this structure can be easily manufactured by a manufacturing method described below. 2 (a) to 2 (h) and FIGS. 3 (i) to (l) are process sectional views showing this manufacturing method, and FIG. 3 shows a process following FIG. 4 (a) to 4 (h) and FIGS. 5 (i) to 5 (l) are top views of a form corresponding to each step in FIGS. It is. In these drawings, the description is simplified, and the dimensional ratio in the drawings, the number of light-emitting elements 10 obtained by cutting, and the like are different from actual cases.

  First, as shown in FIG. 2A, a wafer 24 having a configuration in which an n-type GaN layer 22 and a p-type GaN layer 23 are sequentially formed on a conductive Si substrate 21 is manufactured (wafer forming step). The Si substrate 21 is a silicon single crystal substrate, and is doped with impurities so as to be conductive. Further, the plane orientation is appropriately set so that the high-quality n-type GaN layer 22 and p-type GaN layer 23 can be heteroepitaxially grown thereon. The step of forming the n-type GaN layer 22 and the p-type GaN layer 23 on the Si substrate 21 can be performed by an MBE (Molecular Beam Epitaxy) method or an MOCVD (Metal Organic Chemical Vapor Deposition) method. The n-type GaN layer 22 is appropriately doped with an impurity serving as a donor, and the p-type GaN layer 23 is appropriately doped with an impurity serving as an acceptor. The thickness of the n-type GaN layer 22 can be set to, for example, 5.0 μm, and the thickness of the p-type GaN layer 22 can be set to, for example, about 0.2 μm.

  Next, as shown in FIG. 2B, the Si substrate 21 side of the wafer 24 is attached to a dicing tape (expanding tape) 100. The dicing tape 100 is a tape that can be uniformly expanded by heat treatment or the like, and the size thereof is larger than that of the wafer 24 as shown in FIG. 4B.

  Next, as shown in FIG. 2C, a plurality of grooves 110 are formed on the dicing tape 100 so as to penetrate from the surface on the p-type GaN layer 23 side to the Si substrate 21 (light emitting diode isolation step). ). As shown in FIG. 4C, the groove 110 is formed in two perpendicular directions. The groove 110 is formed using, for example, a dicing saw or laser dicing.

  Next, as shown in FIG. 2D, the dicing tape 100 is subjected to heat treatment and expanded (expanding process). Thereby, the individual light emitting diodes 20 constituted by the p-type GaN layer 23, the n-type GaN layer 22, and the Si substrate 21 are formed separately. In addition, a gap wider than the groove 110 is formed between adjacent light emitting diodes 20.

  Next, as shown in FIG. 2E, in this state, a translucent insulating material is applied to the entire upper surface (translucent insulating layer forming step). As a result, a translucent insulating layer 30 made of a translucent insulating material is formed between the light emitting diodes 20. At this time, the surface of the translucent insulating layer 30 and the surface of the light emitting diode 20 (p-type GaN layer 23) are set to be substantially on the same plane. Further, it is preferable that the translucent insulating material does not remain on the upper surface of the light emitting diode 20 (the upper surface of the p-type GaN layer 23). For this reason, this surface is masked in advance before this step, The mask may be removed after applying the insulating material. Alternatively, the light-transmitting insulating layer on the upper surface of the light-emitting diode 20 may be selectively etched after application of the light-transmitting insulating material.

  Next, as shown in FIG. 2F, in this state, the transparent electrode 42 is formed on the entire surface (transparent electrode forming step). For example, this step can be performed by using a method such as sputtering on the material used as the transparent electrode 42. In FIG. 2E, the surface of the translucent insulating layer 30 and the surface of the light emitting diode 20 (the surface of the p-type GaN layer 23) are described as being in the same plane. As long as the transparent electrode 42 is not divided between the light emitting diode 20 and the translucent insulating layer 30 in the process, they do not have to be exactly on the same plane.

  Next, as shown in FIG. 2G, the dicing tape 100 is removed in this state. In this state, although the individual light-emitting diodes 20 (Si substrate 21) are divided, the translucent insulating material (the translucent insulating layer 30) is formed over the entire surface. Can be handled. In addition, this process can also be performed before a transparent electrode formation process (FIG.2 (f)).

  Next, as shown in FIG. 2H, a back electrode 41 is formed on the back surface of this structure (back electrode forming step). The back electrode 41 can be formed in the same manner as the transparent electrode 42.

  Next, as shown in FIG. 3I (continuation of FIG. 2), an electrode pad 43 is formed on the transparent electrode 42 in the region on the translucent insulating layer 30 on the surface of this structure (electrode pad). Forming step). As the formation method, a metal material constituting the electrode pad 43 is formed on the entire surface, a mask such as a photoresist is formed at a desired location, and etching is performed to remove the metal material other than the desired location ( (Etching method), (2) After forming a mask such as a photoresist other than the desired location, deposit the above metal material on the entire surface, and remove the mask later to remove the metal material other than the desired location Any of the methods (lift-off method) can be used. In addition, if this process is after a transparent electrode formation process (FIG.2 (f)), it can also be performed before a back surface electrode formation process (FIG.2 (h)).

  Next, as shown in FIG. 3 (j), the back electrode 41 side in this structure is attached to a dicing tape 101 similar to the dicing tape 100.

  Next, as shown in FIG. 3 (k), a plurality of grooves 120 penetrating the transparent electrode 42, the translucent insulating layer 30, and the back electrode 41 side from the front surface side are formed, and the above structure is cut ( Cutting step). This step is the same as the light emitting diode separation step (FIG. 2C). However, in this case, the portion where the translucent insulating layer 30 is cut is cut, and the groove 120 is formed in two perpendicular directions as shown in FIG. Thereby, the individual light emitting elements 10 are separated.

  Thereafter, as shown in FIG. 3 (l), the dicing tape 101 is expanded in the same manner as in the expanding step (FIG. 2 (d)). As a result, the light emitting device 10 having the form shown in FIG. 1 is obtained by separating the light emitting device 10 on the dicing tape 101 in a state where the interval is wide. The size of the light emitting element 10 is, for example, about 200 μm (vertical) × 200 μm (horizontal) × 200 μm (height). For example, the light emitting element 10 is moved by using a handling jig such as a die collet that vacuum-sucks it. Work such as arraying is possible. Therefore, a lighting fixture or the like can be manufactured by arranging the light emitting elements 10 side by side. If the individual light emitting elements 10 can be handled in the state shown in FIGS. 3 (k) and 5 (k), the steps of FIGS. 3 (l) and 5 (l) are unnecessary. .

  At this time, when the size of the light emitting element to be handled is small, it is difficult to move the light emitting element using a handling jig. On the other hand, the light emitting diode 20 directly contributes to light emission in the light emitting element 10, but since the light-transmitting insulating layer 30 is formed next to or around the light emitting diode 10, the actual size of the light emitting element 10 is increased. This is larger than that of the light emitting diode 20. Therefore, the light emitting element 10 can be substantially enlarged and the handling thereof can be facilitated. Or when the magnitude | size of the light emitting element 10 is made constant, since the light emitting diode 20 can be made smaller, it is possible to manufacture more light emitting elements 10 from the wafer of the same magnitude | size.

  For this reason, by this manufacturing method, said light emitting element 10 can be obtained easily and at low cost.

  In the above manufacturing method, as shown in FIG. 1, the light emitting element 10 having a configuration in which the light emitting diode 20 is provided on one vertex side of a rectangle when viewed from above is manufactured. However, even if the light emitting diode 20 is provided in the central portion of the rectangle and the entire periphery thereof is surrounded by the translucent insulating layer 30, for example, the groove 120 in the cutting step shown in FIGS. 3 (k) and 5 (k). It is obvious that the same manufacturing can be achieved by appropriately setting the positions of

  In the light emitting device 10 having the configuration of FIG. 1, a transparent electrode 42 or an electrode pad 43 is formed on the upper surface side as an electrode connected to one pole (p-type GaN layer 23) in the light emitting diode 20, and the other pole (n A back electrode 41 was formed on the lower surface side through the Si substrate 21 as an electrode connected to the type GaN layer 22). In this configuration, the back substrate 41 and the n-type GaN layer 22 can be electrically connected because the Si substrate 21 serving as the semiconductor layer substrate on which the light emitting layer is formed on the wafer 24 is conductive. It was.

  On the other hand, a similar light-emitting element can be formed using a semiconductor layer formed over an insulating substrate. FIG. 6 is a perspective view (a), a top view (b), and a sectional view (c) in the BB direction of the light emitting element 50 having this configuration. In the light emitting element 50, two sets of transparent electrodes and electrode pads are formed on the upper surface side, and each set is electrically connected to two electrodes of the light emitting diode.

  The light emitting diode 60 in this configuration includes an n-type GaN layer 62 and a p-type GaN layer 63 formed on a substrate 61. However, in this configuration, as the substrate 61, an insulating material such as sapphire is used as the substrate 61. For this reason, it is difficult to make an electrical connection to the n-type GaN layer 62 through the substrate 61. The same applies to the case where a non-insulating material such as non-doped silicon is used as the substrate 61 even if it is not insulating.

  Therefore, in the light emitting diode 60, the p-type GaN layer 63 is formed only in the right region in FIG. Instead, an n-side electrode 71 is formed in the left region in FIG. In order to manufacture this structure, the n-type GaN layer 62 and the p-type GaN layer 63 are sequentially formed on the substrate 61, and then the p-type GaN layer 63 in the left region in FIG. 6 is selectively etched. To remove the n-type GaN layer 22. Thereafter, it can be manufactured by selectively forming the n-side electrode 71 on the exposed n-type GaN layer 22. The n-side electrode 71 can be formed using a metal material that can make ohmic contact with the n-type GaN layer 62. However, since there is no light emitting layer underneath, it is not necessary to be transparent to the light emitted by the light emitting diode 60.

  The light-transmitting insulating layer 70 is formed adjacent to the light-emitting diode 60 similarly to the light-emitting element 10 having the configuration shown in FIG. 1, but the two transparent electrodes 81 and 82 are electrically independent on the upper surface side. And formed. The transparent electrode 81 is formed to cover the p-type GaN layer 63 and the adjacent translucent insulating layer 70, and the transparent electrode 82 is formed to cover the n-side electrode 71 and the adjacent translucent insulating layer 70. An electrode pad 83 is formed on the transparent electrode 81 on the translucent insulating layer 70, and an electrode pad 84 is formed on the transparent electrode 82 on the translucent insulating layer 70. By performing wire bonding on the electrode pads 83 and 84, electrical connection with the outside becomes possible, and a forward current can be passed through the light emitting diode 60 to emit light. That is, in this configuration, the two electrodes connected to the two poles in the light emitting diode 60 are both taken out from the upper surface side (the same side). Unlike the light emitting element 10 shown in FIG. 1, a back electrode is not necessary.

  Even in this configuration, light from the p-type GaN layer 63 is not blocked by the electrode pads 83, 84, etc., so that it is obvious that high luminous efficiency can be obtained.

  When manufacturing the light-emitting element 50 having this configuration, for example, the steps after FIG. 2B may be similarly performed on the wafer on which the light-emitting diode 60 having the above-described configuration is formed. At this time, the transparent electrodes 81 and 82 are separated after the transparent electrode forming step (FIG. 2F), and the electrode pad 83 and the transparent electrode 82 are formed on the transparent electrode 81 in the electrode pad forming step (FIG. 3I). The difference is that each of the electrode pads 84 is formed thereon, and the back electrode forming step (FIG. 2H) is not performed. Further, in the translucent insulating layer forming step (FIG. 2E), it is also necessary to prevent the translucent insulating material from remaining not only on the p-type GaN layer 63 but also on the n-side electrode 71. is there. Except for these points, the light-emitting element 50 having this configuration can be easily manufactured in the same manner as the light-emitting element 10 described above.

  In the light emitting element 50, as described above, the insulating substrate 61 can be used. However, it is clear that a similar configuration can be used even if the substrate 61 is conductive. Regardless of the type of substrate 61, this configuration can be used when two electrodes connected to the two poles of the light emitting diode 60 need to be formed on the upper surface side.

  In each of the light-emitting element 10 and the light-emitting element 50 having the above-described configuration, a light-emitting diode using a semiconductor layer formed by epitaxial growth on a substrate is used. However, a layer formed in a bulk semiconductor wafer is used. Even when the used light emitting diode is used, it is obvious that the same configuration can be obtained and the same effect can be obtained.

  In the above configuration, the light emitting layer is formed by the pn junction at the interface between the n-type GaN layer and the p-type GaN layer, but other configurations can also be used. For example, the semiconductor layer may include a heterostructure, and an MQW (Multi Quantum Well) layer in which a GaN layer and an InGaN layer are stacked may be formed between an n-type GaN layer and a p-type GaN layer. In addition, the structure of the light emitting diode is arbitrary, such as the vertical relationship between the n-type semiconductor layer and the p-type semiconductor layer.

  Further, as a material for forming the light emitting layer in the light emitting diode, any material can be used according to the emission wavelength. For example, when a fluorescent material is added to the light-transmitting insulating layer as described above, it is necessary to use a material that emits light having a shorter wavelength than the light emitted from the fluorescent material for the light emitting layer. Therefore, in this case, it is preferable to use, for example, a group III nitride semiconductor such as GaN or GaInN or an oxide semiconductor such as ZnO as a material that emits light having a short wavelength. Moreover, III-V group compound semiconductors, such as GaAs and GaP, can also be used.

  Moreover, it is also possible to manufacture the light emitting element 10 and the light emitting element 50 having the above-described structure by a manufacturing method other than the manufacturing methods described above.

10, 50, 90 Light-emitting element 20, 60 Light-emitting diode 21 Si substrate (substrate)
22, 62 n-type GaN layer (n-type semiconductor layer)
23, 63 p-type GaN layer (p-type semiconductor layer)
24 Wafer 30, 70, 94 Translucent insulating layer 41 Back electrode 42, 81, 82 Transparent electrode 43, 83, 84 Electrode pad 61 Substrate 71 N-side electrode 91 Semiconductor layer 92 Conductive adhesive layer 93 Electrode 100, 101 Dicing Tape 110, 120 groove

Claims (5)

A light emitting element using a light emitting diode having a rectangular structure in which a semiconductor layer having a light emitting layer provided therein is formed on a substrate,
The light emitting diode;
A light-transmitting insulating layer formed adjacent to a side surface of the semiconductor layer and the substrate constituting the rectangular shape ;
A transparent electrode that covers the top surface of the light emitting diode and the top surface of the translucent insulating layer and is electrically connected to one of the electrodes of the light emitting diode;
An electrode pad formed in a region to be an upper surface of the translucent insulating layer on the transparent electrode;
A light emitting element comprising: The substrate is a silicon single crystal;
The semiconductor layer includes an n-type semiconductor layer and a p-type semiconductor layer made of a III-V group compound semiconductor material.
The light-emitting element according to claim 1. The substrate is conductive;
The light emitting device according to claim 1, wherein a back electrode electrically connected to the other electrode of the light emitting diode is formed on the lower surface of the substrate. On the upper surface side of the semiconductor layer,
3. The light-emitting element according to claim 1, comprising two sets of the transparent electrode and the electrode pad that are electrically connected to one pole and the other pole of the light-emitting diode, respectively.   The light emitting device according to any one of claims 1 to 4, wherein a fluorescent material is mixed in the light transmissive insulating layer.