JP2004335956A - Substrate processing device and its processing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing device and its processing method in which a treating agent to a substrate can be classified for recycling and an exhausting force can be efficiently utilized. <P>SOLUTION: The substrate processing device 10 has a retaining base 20 for retaining a wafer W rotatably, a nozzle 40 for supplying chemical liquids L1, L2 to the wafer W, and a pot 30 which is disposed in an outer periphery of the retaining base 20 for recovering the chemical liquids L1, L2 scattered from the wafer W. The pot 30 contains a lid 70 movable in an axial direction of the retaining base 20, to form a plurality of chemical liquid recovery grooves M1, M2 internally by changing the position of the lid 70. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【００４３】
この条件から、排気用力に求められる流量を比較した。
【数１】

【００４４】
この結果、第１の実施形態の洗浄装置は、従来技術に比べて、必要な排気流量を４６．８％に低減することができ、十分な効果が得られたことがわかる。
【００４５】
次に、第１の実施の形態の洗浄装置による分別回収効率の改善結果を示す。薬液Ｌ１には、０．５ｗｔ％ＨＦを用い、また、薬液Ｌ２にはリンス水として純水を用い、ＨＦ処理、リンス、乾燥の一連の工程をウエハー５０枚について処理した。タンクから供給された薬液Ｌ１、Ｌ２をノズル４０を介してウエハーＷに散布し、飛散した薬液Ｌ１、Ｌ２を薬液回収溝Ｍ１、Ｍ２から回収してタンクに戻し、繰り返し使用した。薬液Ｌ１のＨＦ濃度およびその減り量によって、分別回収の能力を測定した。また、薬液Ｌ１の供給ラインの濃度をインライン濃度計で測定し、薬液Ｌ１の使用量はタンクの液面低下量から算出した。
【００４６】
【表２】

【００４７】
上記測定結果からも明らかなように、本実施形態の洗浄装置による分別回収能力が従来技術よりも改善されていることが理解される。
【００４８】
次に、パーティクルカウンタによって処理後のウエハー上のウォータマークとゴミを測定した。
【００４９】
【表３】

【００５０】
この結果からも明らかなように、パーティクル数が大幅に減少しており、排気用力の効率が優れていることが理解される。
【００５１】
以上説明したように、本実施の形態によれば、排気用力を大幅に削減することが可能となり、薬液回収およびその再利用システムとの併用により、ウエハー１枚あたりの洗浄で廃棄する薬液量を大幅に削減することが可能となる。必要な用力の低減、薬液使用量の低減および分別回収・再利用が確実になることで、本技術を利用した半導体洗浄装置は地球環境保護の大きく貢献することができる。
【００５２】
本発明の好ましい実施の形態について詳述したが、本発明は係る特定の実施形態に限定されるものではなく、特許請求の範囲に記載された本発明の要旨の範囲内において、種々の変形・変更が可能である。
【００５３】
実施の形態では、半導体ウエハーの洗浄装置を例にしたが、ウエハー以外の液晶基板等の基板の処理にも適用することができる。さらに、ポットの形状や大きさ、材質等は、本発明の要旨を逸脱しない範囲において適宜変更が可能である。また、蓋の形状や、蓋の数、あるいは回収用溝の数も、適宜変更することが可能である。
【００５４】
【発明の効果】
本発明に係る基板処理装置によれば、ポット内に配される仕切部材（蓋）を移動させることで、複数の処理液の回収溝または空間を形成するので、複数の処理液を効率よく分別回収し、その再利用をすることができる。さらに、仕切部材により、処理液の回収されない溝または空間を閉じることで、排気用力に必要なスペースを削減することが可能となり、従来よりも排気効率を向上させることができる。このことは、排気能力を大型化することなく、ポット内において処理液および／またはその蒸気や雰囲気を効率よく吸引することができ、その結果、ウエハー上のパーティクル数やウォータマークの発生を低減することが可能となる。さらに、小さな排気用力の使用により、処理装置全体を小型化することができる。
【図面の簡単な説明】
【図１】本発明の第１の実施の形態に係る洗浄装置の構成を示す断面図である。
【図２】本発明の第２の実施の形態に係る洗浄装置の構成を示す断面図である。
【図３】本発明の第２の実施の形態に係る洗浄装置の構成を示す断面図である。
【図４】本発明の第３の実施の形態に係る洗浄装置の構成を示す断面図である。
【図５】図５（ａ）は、従来の洗浄装置（水平分離方式）の一構成例を示す断面図であり、図５（ｂ）は、従来の洗浄装置（垂直分離方式）の一構成例を示す断面図である。
【符号の説明】
１０ 洗浄装置
２０ 保持台
２１ 回転軸
２２ 保持面
２３ 把持具
３０ ポット
３１ 開口
３２ 内周板
３３ 外周板
３４ 上板
３５ 底板
３６ 仕切板
４０ ノズル
５０ 排液パイプ
５１ 排液パイプ
６０ 気液分離ボックス
６１ 排気パイプ
７０ 蓋
７２ 開口切り換え部
７４ 接続部
７６ 開口
７７ 開口
７８ 開口
８０ 蓋
８４ａ 貫通孔
８６ 仕切板
８６ａ 貫通孔[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate processing apparatus, and more particularly to recovery of a processing liquid of a substrate processing apparatus having a function of cleaning a substrate such as a semiconductor wafer and reuse thereof.
[0002]
[Prior art]
In recent years, in response to market demands for higher performance, shorter product cycles, and lower costs for semiconductor devices, semiconductor device circuits have become finer and more multilayered, wafers in the manufacturing process have become larger in diameter, and production forms have been increasing. It has changed from mass production of one product to small production of many products. Along with this, the cleaning apparatus is going to shift from the conventional batch type immersion method (hereinafter, referred to as a batch type) to a single-wafer spin cleaning method (hereinafter, referred to as a single-wafer type). The batch method is a method in which normally about 50 wafers are sequentially fed to a plurality of chemical layers, and the single wafer method holds and rotates wafers one by one and sprays a chemical solution on both surfaces or an arbitrary surface. It is a method of cleaning.
[0003]
The new spin-type cleaning method can prevent cross-contamination between and within batches and can maintain a higher level of wafer in-plane uniformity because of the single-wafer method compared to the batch method. Its advantages are that it can be used, that it is easy to cope with small lot production without using a large amount of chemical solution at one time, and that the floor space occupied by one facility is small. The satisfaction of these excellent points has led to a shift to single wafer processing.
[0004]
However, single-wafer systems also have some disadvantages. As a problem, in order to reduce the floor occupied area, a single treatment layer must perform a plurality of treatments with a chemical solution, and therefore, a sufficient environment in the tank is required. In particular, chemicals and rinsing water used for wafer processing have to be separated, which increases the required power and consumption of cleaning chemicals in the prior art. Above all, exhaust power was required to be consumed in large quantities. The reason for this is that if instability occurs in the exhaust power required on the device side, it is likely that particles will be generated during wafer processing and watermarks will be generated. Immediate improvement was required as a disadvantage of the single-wafer method.
[0005]
Many solutions to these problems have emerged in the world, but no definitive solution has yet emerged. In particular, energy saving of utilities is an important problem to be solved from the viewpoint of global environmental protection, and is an important problem of a single wafer cleaning apparatus. Therefore, an object of the present invention is to reduce the required power while maintaining the advantages of the single-wafer cleaning apparatus. Further, a technique for reducing the use of a chemical solution is provided.
[0006]
Normally, in the single-wafer method, when washing with multiple chemicals in one tank, to avoid mixing, divide the inside of the tank horizontally and avoid mixing of chemicals, or in the vertical direction. The interior of the tank is partitioned to achieve the same effect.
[0007]
FIG. 5A shows an example of the horizontal division method. A similar technique is disclosed in, for example, Patent Document 1. As shown in the figure, the pot P that can be separated and collected has two pots called ring pots K1, K2, and K3 that open toward the central space of the pots. That's it. The opening is horizontally divided when viewed from the holding table H of the wafer W. At the center thereof, there is a holding table H that holds and rotates the wafer W by the holding tool C, and the relative position between the holding table H and the pot P can be changed. Drainage pipes P1, P2, P3 for discharging the liquid stored inside to outside of the pot P are formed in the ring canals K1, K2, K3. In order to keep the ring canals K1, K2, K3 at a negative pressure, a ring-shaped space R connected to the exhaust power EX is arranged outside the ring canal, and the ring canals K1, K2, K3 have a plurality of exhausts. They are connected by holes H1, H2 and H3.
[0008]
When processing the wafer W held by the holding table H into cleaning liquids L1, L2, and L3, these cleaning liquids L1, L2, and L3 are supplied from the nozzles N1, N2, and N3, respectively, and dropped onto the wafer W. The cleaning liquids L1, L2, L3 are separated and collected into desired ring canals K1, K2, K3 by relative movement of either the holding table H or the pot P. Here, a description will be given assuming that the pot P is fixed and the holding table H moves.
[0009]
The holding table H holding the wafer W moves to the level of the ring canal K1 and rotates. When the chemical solution L1 is sprayed on the wafer W, the chemical solution L1 is scattered to the ring canal K1 by the rotation of the holding table H, collected, and discharged by the drain pipe P1. Next, the holding table H moves to the height of the ring canal K2. When the chemical solution L2 is sprayed on the wafer W, the chemical solution L2 is scattered on the ring canal K2 by the rotation of the holding table H, is collected, and is discharged by the drain pipe P2. Next, the holding table H moves to the height of the ring canal K3. When the chemical solution L3 is sprayed on the wafer W, the chemical solution L3 is scattered and collected in the ring canal K3 by the rotation of the holding table H, and is discharged by the drain pipe P3. As described above, a plurality of chemical treatments can be performed, and the respective chemicals can be collected. During this operation, the ring-shaped space R is always kept at a negative pressure by the exhaust force EX, and all the ring canals K1, K2, K3 are at a negative pressure through the exhaust holes H1, H2, H3. .
[0010]
A vertical division method in which the ring canals K1 and K2 are arranged concentrically will be described with reference to FIG. The shielding plate S, which aims to change the flow of the droplets and the gas scattered in the radial direction by rotation of the support H with respect to the pot P, with respect to the pot P, Moving.
[0011]
When the chemical solution L1 is sprayed by the nozzle N1, the shielding plate S moves in advance so that the ring canal K1 is positioned on the horizontal plane of the wafer W, and changes the direction of the scattered chemical solution L1 and the air flow to the exhaust groove D1. Introduce. When the chemical solution L2 is sprayed from the nozzle N2, the shielding plate S moves in advance so that the ring canal K2 is positioned on the horizontal plane of the wafer W, and changes the direction of the scattered chemical solution L2 and the air flow to change the exhaust groove. Introduce to D2. As described above, the gas flows generated by the rotation of the chemicals L1, L2 and the holding table H are collected by the respective exhaust grooves D1, D2, and are discharged to the outside of the pot P through the drainage pipes P1, P2. At this time, the liquid component and the gas component are simultaneously discharged.
[0012]
Depending on the conditions during the wafer processing, the holding table H may rotate at a high speed. The airflow generated at that time becomes large, and the droplets are largely skipped. Therefore, it is necessary to collect and collect the droplets in a processing tank or pot having a large radius. On the other hand, in the case of low rotation, the airflow generated by the rotation is small, and the scattered chemical solution cannot be largely skipped, and it is better to collect in a processing tank or pot having a small radius. Considering these, the vertical separation method is considered suitable.
[Patent Document 1]
JP-A-5-28395
[0013]
[Problems to be solved by the invention]
However, the recovery of the processing liquid in the conventional processing apparatus has the following problems. In the horizontal separation system shown in FIG. 5A, the ring canals K1, K2, and K3 are always open. Therefore, when processing is performed using a certain ring canal, there is a high possibility that the chemical solution atmosphere is taken in from the opening of another ring canal. In particular, since the wafer holding table H is rotating at a high speed at the center, a negative pressure is generated inside, and it is expected that the chemical atmosphere will be taken in from the opening of the ring canal which is not used at the time of processing with a very high probability. Is done. This causes a decrease in the purity of the collected chemical solution, and appears as a non-uniformity of the chemical solution processing or a watermark on the wafer. On the other hand, in order to prevent this, it is necessary to continue sucking the ring canal by a large amount of intake air, and for that purpose, the exhaust power must be increased. As a result, the size of the apparatus is increased and the processing cost is increased.
[0014]
In the vertical separation method as shown in FIG. 5B, the drain grooves D1 and D2 can collect the chemicals L1 and L2, respectively, but they are gas components brought by the holding table H. And the drainage pipes P1 and P2 are connected to the exhaust power EX. When recovering the chemical solution L2, the gas flowing simultaneously with the chemical solution L2 passes through the space where the exhaust groove D1 is open. In order to prevent mixing, the droplets of the chemical liquid L2 need to be sufficiently scattered, and the holding table H must be rotated at a higher speed. Therefore, the ring-shaped opening K2 and the drainage groove D2 need a space enough to receive the airflow generated by the high-speed rotation, and it is necessary to use a pot P having a large radius. Then, an exhausting power is required to keep the space at a negative pressure. Further, it is sufficiently possible that vapor of the chemical solution L1 from the exhaust groove D1 is mixed at the same time. To cope with this, it is necessary to prevent stagnation and backflow of the chemical solution L1 by a large amount of exhaust. For this reason, as in the case of the horizontal division method, the exhaust power must be increased, and there is a problem of increasing the size of the apparatus and increasing the cost of processing.
[0015]
In view of the above, the present invention has been made to solve the above-mentioned problems of the related art, and to provide a substrate processing apparatus and a processing method thereof that can separate and collect a processing liquid for a substrate and can efficiently use exhaust power. Aim.
Still another object of the present invention is to provide an economical substrate processing apparatus which is improved from the conventional substrate processing apparatus and has excellent processing liquid separation and recovery capability, and a method for processing the same.
[0016]
[Means for Solving the Problems]
A substrate processing apparatus according to the present invention includes a holding table that rotatably holds a substrate, a supply unit that supplies a processing liquid onto the substrate, and a processing liquid that is disposed on an outer periphery of the holding table and that is scattered from the substrate. And a pot that collects a plurality of processing liquids inside by changing a position of the at least one partition member. The pot includes at least one partition member movable in an axial direction of the holding table. Space can be formed. Accordingly, a plurality of processing liquids used for processing the substrate can be separated and collected, and the recovered processing liquid can be reused to perform low-cost substrate processing. Further, it is possible to provide a substrate processing apparatus capable of reducing a processing liquid discharged to the outside of the substrate processing apparatus and contributing to environmental protection.
[0017]
Preferably, when the partition member is at the first position, an opening is formed in the first processing liquid collecting space in the pot, and the opening of the second processing liquid collecting space is closed. When the partition member is at the second position, the opening of the first processing liquid collecting space in the pot is closed, and the opening is formed in the second processing liquid collecting space. As described above, when the opening of the space for collecting one processing liquid is formed, the space for collecting the processing liquid in the pot is reduced by closing the opening of the space for collecting the other processing liquid. This makes it possible to make full use of capabilities such as exhaust power. In other words, it is possible to reduce the exhaust power as compared with the related art. Furthermore, since the openings of the first and second spaces for collecting the processing liquid that do not collect the processing liquid are closed, the mixing of other processing liquids and their atmospheres is prevented.
[0018]
When the opening of the first or second processing liquid recovery space is formed, the first or second processing liquid used for processing the substrate is recovered through the opening. Preferably, the substrate processing apparatus further includes a drain pipe connected to the pot, and a gas-liquid separator connected to the drain pipe, and the gas-liquid separator is desirably connected to an exhaust power. Further, the first processing liquid recovery space is formed on the inner peripheral side of the second processing liquid recovery space, and the first and second processing liquid recovery spaces are first and second drainage spaces. It is also possible that the liquid pipes are respectively connected, and the gas-liquid separation unit is connected to the second drain pipe.
[0019]
Another substrate processing apparatus of the present invention has a function of supplying a processing liquid onto a rotatably held substrate and collecting the processing liquid scattered from the substrate in a pot. The pot is disposed on the outer periphery of the holding table, and has formed therein a plurality of processing liquid collecting grooves for separating and collecting the processing liquid, and each of the plurality of processing liquid collecting grooves is movably provided. The partition members are separated from each other by changing the position.
[0020]
Preferably, when the partition member is at the first position, an opening is formed in the first processing liquid recovery groove in the pot (a usable state), and the opening of the second processing liquid recovery groove is closed ( When the partitioning member is at the second position, the opening of the first processing liquid recovery groove in the pot is closed (non-use state), and an opening is formed in the second processing liquid recovery groove. (Usable state).
[0021]
Further, the first and second processing liquid collecting grooves are arranged concentrically with the holding table. The holding table holds the substrate so as to be rotatable substantially horizontally, and the partition member includes a first portion extending in a substantially horizontal direction and a second portion inclined from the first portion. When the member is at the first position, the first surfaces of the first portion and the second portion form a part of the first processing liquid recovery groove, and when the partition member is at the second position, The second surface where the first portion and the second portion oppose the first surface forms a part of the second processing liquid collecting groove. The first processing liquid is introduced into the first processing liquid collecting groove using the first surface of the partition member, and the second processing liquid is introduced into the second processing liquid collecting groove using the second surface. The introduction prevents the first and second processing liquids from being contaminated by other processing liquids.
[0022]
The substrate processing apparatus further includes a nozzle capable of dropping a plurality of processing liquids onto the substrate on the holding table. When the first processing liquid is dropped from the nozzle, the first processing liquid is provided in the first processing liquid recovery groove. When the liquid is recovered and the second processing liquid is dropped from the nozzle, the second processing liquid is recovered in the second processing liquid recovery groove. Preferably, the first and second processing liquid recovery grooves are set to a negative pressure. However, since the space of the processing liquid recovery groove that is not in use is closed by the partition member, less space is required as compared with the related art. The pressure may be reduced to a negative pressure. As a result, the capacity of the exhaust power can be reduced. On the other hand, if the exhausting power is about the same as the conventional one, the negative pressure in the pot is also increased, and the number of particles on the wafer and the watermark can be reduced.
[0023]
A substrate processing method according to the present invention is directed to a substrate processing apparatus that includes a holding table that rotatably holds a substrate, and a pot that is disposed around the holding table and that has a function of collecting a processing liquid used for processing the substrate. Has the following steps.
Forming a first processing liquid collecting space corresponding to the first processing liquid supplied to the substrate in the pot by moving the partition member in the pot to the first position; Supplying the first processing liquid to the substrate, and collecting the first processing liquid scattered from the substrate in a space for collecting the first processing liquid.
[0024]
Preferably, when the partition member is at the first position, the opening of the space for collecting the second processing liquid in the pot is closed. Further, in the substrate processing method, by moving the partition member to the second position, a space for collecting a second processing liquid corresponding to the second processing liquid supplied to the substrate is formed in the pot, The second processing liquid is collected by the space for collecting the second processing liquid. Preferably, the pressure in the first or second space for collecting the processing liquid for collecting the processing liquid is made negative. At this time, since the openings of the first and second processing liquid collecting spaces in which the processing liquid is not collected are closed, other processing liquids and their atmospheres are prevented from being mixed.
[0025]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a sectional view showing a configuration of a substrate cleaning apparatus according to an embodiment of the present invention. In FIG. 1, a substrate cleaning apparatus 10 includes a holding table 20 for horizontally and rotatably holding a semiconductor wafer W, a pot 30 disposed on an outer periphery of the holding table 20, and a plurality of And a drain pipe 50, 51 connected to the lower part of the pot 30, and a gas-liquid separation box 60 connected to the drain pipe 51.
[0026]
The holding table 20 is rotated via a rotation shaft 21 by a rotation driving device (not shown). The holding table 20 has a circular holding surface 22 on the surface thereof, and a holding tool 23 for holding the wafer W is formed on the holding surface 22. The wafer W is preferably held substantially horizontally in a non-contact state by a gripper 23 on the holding surface 22 using an inert gas supplied from the holding surface 22 and utilizing Bernoulli's principle.
[0027]
The pot 30 has a donut shape in which an opening 31 is formed in the center, and has a ring-shaped inner peripheral plate 32, a ring-shaped outer peripheral plate 33, and a connection between the inner peripheral plate 32 and the outer peripheral plate 33. It has a plate 34, a bottom plate 35, and a partition plate 36 extending from the bottom plate 35 at a predetermined height. The upper plate 34 is inclined upward from the outer peripheral plate 33 toward the inside, and has a circular opening 31 at the center thereof. The diameter of the opening 31 is substantially equal to the diameter of the holding surface 22 of the holding table 20.
[0028]
The pot 30 is arranged on the outer periphery of the holding table 20. At this time, the end of the inner peripheral plate 32 is at substantially the same height as the holding surface 22 of the holding table 20. In the pot 30, a ring-shaped lid (partition member) 70 for forming chemical solution collecting grooves M1 and M2 for collecting a chemical solution is provided. The lid 70 includes an opening switching portion 72 extending substantially horizontally at the same inclination angle as the upper plate 34 of the pot 30, and a connecting portion 74 connected to the opening switching portion 72 and extending substantially vertically therefrom. Including. The lid 70 can be moved in the pot 30 in the vertical direction, that is, in the direction of the rotating shaft 21 of the holding table 20 by a driving device (not shown).
[0029]
As shown in FIG. 1 (a), when the lid 70 is moved upward and the opening switching portion 72 is in contact with the upper plate 34 of the pot 30, the pot 30 includes the holding table 20. A ring-shaped chemical solution recovery groove M1 is formed in the adjacent space. The chemical solution collecting groove M1 is a space surrounded by the surface of the lid 70, the partition plate 36, the bottom plate 35, and the inner peripheral plate 32. In the space, a ring having a height h1 integral with the holding table 20 is provided. An opening 76 is formed. Further, since the connecting portion 74 of the lid 70 is separated from the partition plate 36, a space 77 having a height h2 is formed there.
[0030]
When the lid 70 is moved downward as shown in FIG. 7B and the connecting portion 74 is brought into contact with the partition plate 36, the chemical solution collecting groove M2 becomes active (usable state) and the chemical solution is used. The recovery groove M1 becomes inactive (non-use state). That is, the opening switching portion 72 of the lid 70 is separated from the upper plate 34 and abuts on the end of the inner peripheral plate 32, and the connecting portion 74 is connected to the partition plate 36, so that the chemical solution collecting groove M 1 is closed. On the other hand, a ring-shaped opening 78 having a height h3 from the holding surface of the holding base 20 is formed in the chemical solution collecting groove M2, and the back surface of the lid 70, the upper plate 34, and the outer peripheral plate 33 are closed. , A space surrounded by the bottom plate 35 and the partition plate 36 is formed.
[0031]
The nozzle 40 is arranged above the holding table 20. The nozzle 40 can spray the chemicals L1 and L2 on the wafer W according to the processing of the wafer W. Drainage pipes 50 and 51 are provided at the bottom of the pot 30. The drain pipe 50 is connected to the chemical recovery groove M1, and the drain pipe 51 is connected to the chemical recovery groove M2. The drainage pipe 51 is further connected to a gas-liquid separation box 60 for separating gas and liquid. The gas-liquid separation box 60 is further connected to an exhaust power EX (not shown) via an exhaust pipe 61. The exhaust power EX sucks gas through the exhaust pipe 61 and exhausts the vapor or atmosphere of the collected chemical solution to the outside in the gas-liquid separation box 60. At the same time, the interior of the pot 30 is reduced to a negative pressure by this exhaust. I do. On the other hand, the liquid components are respectively collected from the drainage pipes 50 and 51, and the drainage is subjected to a process for reuse in a reuse processing unit (not shown).
[0032]
Next, the operation will be described. In the present cleaning apparatus, the wafer W held by the holding table 20 is rotated at a predetermined speed. Then, the cleaning liquid L <b> 1 is dropped on the wafer W from the nozzle 40 in order to perform the chemical treatment on the wafer W. At this time, as shown in FIG. 1A, the lid 70 has the opening switching section 72 abutting on the upper plate 34, and a ring-shaped opening 76 is formed between the holding table 20 and the opening switching section 72. A chemical solution collecting groove M1 is formed on the outer periphery of the holding table 20. The connecting portion 74 of the lid 70 is also at a position lower than the holding surface 22 of the holding table 20, and guides gas and liquid scattered from the surface of the wafer W toward the bottom surface of the chemical solution collecting groove M1. Thus, the cleaning liquid L1 that has processed the wafer W is recovered in the chemical liquid recovery groove M1, and the cleaning liquid L1 is recovered from the drain pipe 50. Further, since the chemical liquid collecting groove M1 is connected to the chemical liquid collecting groove M2 via the opening 77, the vapor and atmosphere of the cleaning liquid L1 are discharged through the gas-liquid separation box 60 and the exhaust pipe 61, and at the same time, the chemical liquid The opening 76 of the collecting groove M1 becomes negative pressure, and the vapor and atmosphere of the cleaning liquid L1 are prevented from returning from the ring-shaped opening 76 to the wafer W of the holding table 20.
[0033]
Next, when performing the chemical treatment with the cleaning liquid L2, the lid 70 is lowered, the connecting portion 74 is brought into contact with the partition plate 36, and the opening switching portion 72 is brought into contact with the end of the inner peripheral plate 32. Then, the chemical solution collecting groove M1 is closed. An opening 78 is formed between the opening switching portion 72 of the lid 70 and the upper plate 34 of the pot 30, and the cleaning liquid L 2 is dropped from the nozzle 40 onto the rotating wafer W. Thus, the cleaning liquid L2 scattered by the wafer W is collected in the chemical liquid collecting groove M2. The recovered chemical passes through a drain pipe 51, and a gas and a liquid are separated in a gas-liquid separation box 60. The liquid is recovered through a drain pipe 51, and the gas passes through an exhaust pipe 61 and is discharged by an exhaust power EX. It is discharged outside by the intake air. Further, since the opening 78 of the chemical solution collecting groove M2 is pulled by the exhaust force, the pressure becomes negative, and the vapor and atmosphere of the cleaning liquid L2 may return from the ring-shaped opening 78 to the wafer W on the holding table 20. Is prevented.
[0034]
In the cleaning device according to the present embodiment, a chemical liquid collecting groove M1 dedicated to liquid is provided inside the pot 30, and a chemical liquid collecting groove M2 for simultaneously discharging gas and liquid is disposed outside the pot 30. By providing the lid 70 in the inside chemical solution collecting groove M1, the exhaust pressure of the exhaust force EX can be applied to the necessary chemical solution collecting grooves M1 and M2, so that no waste occurs. Further, the cleaning liquid L1 collected in the chemical liquid collecting groove M1 does not come out to the outside by the lid 70, so that a force for sucking the cleaning liquid L1 is not required. In addition, since the surfaces of the pot 30 that come into contact with the chemical solutions L1 and L2 use surfaces that are separated from each other on the front and back of the lid 70, the chemical solutions L1 and L2 do not mix. As described above, according to the present embodiment, the chemical solutions L1 and L2 can be efficiently separated and collected.
[0035]
Next, a second embodiment of the present invention will be described. In the first embodiment, two chemical liquid recovery grooves M1 and M2 are formed in the pot 30 using one lid 70, and the types of chemical liquids L1 and L2 are separated and recovered, but a plurality of lids 70 are used. As a result, the number of chemical solution collecting grooves can be increased, and even three or more types of chemical solutions can be separately collected.
[0036]
FIG. 2 shows a configuration of a cleaning apparatus 11 according to the second embodiment. The same components as those in FIG. 1 are denoted by the same reference numerals. Inside the pot 30, a second lid 80 is provided in addition to the lid 70 of the first embodiment. As described above, the lid 70 forms the chemical liquid collecting grooves M1 and M2 for separating and collecting the cleaning liquids L1 and L2 in the pot 30, and the second lid 80 forms the chemical liquid for separating and collecting the cleaning liquid L3. The recovery groove M3 is formed. A through hole 84 a is formed in the connecting portion 84 of the lid 80, a partition 86 is formed in the bottom plate of the pot 30 so as to be in contact with the connecting portion 84, and a through hole 86 a is formed in the partition 86. Is formed.
[0037]
In the state shown in FIG. 2A, the opening switching portions 72 and 82 of the lid 70 and the lid 80 are in contact with the upper plate 34 of the pot 30, respectively, and the chemical liquid collecting groove M1 is active. The cleaning liquid L <b> 1 scattered from the wafer W is collected from the drain pipe 50, and at the same time, the gas component is sucked into the exhaust power EX through the opening 77. At this time, the through-hole 84 a of the connecting portion 84 of the lid 80 is at a position different from the through-hole 86 a of the partition 86, and the chemical solution collecting groove M <b> 3 is closed by the lid 80.
[0038]
In the state shown in FIG. 2B, the lid 70 and the lid 80 are lowered, their opening switching parts 72 and 82 are arranged at the end of the inner peripheral plate 32 of the pot 30, and the connecting part 74 of the lid 70 is The chemical solution recovery grooves M1 and M2 are closed by the lids 70 and 80 while coming into contact with the partition portion 36. At this time, the through hole 84 a of the connecting portion 84 of the lid 80 matches the through hole 86 a of the partition 86. As a result, the chemical solution collecting groove M3 becomes active, and the chemical solution L3 dropped from the nozzle 40 is scattered from the surface of the wafer W and collected in the collecting groove M3. The liquid is discharged from the drain pipe 52, and the gas is exhausted from the exhaust pipe 61 through the through holes 86 a and 84 b. At the same time, the opening 88 of the chemical solution collecting groove M3 is set to a negative pressure through the through holes 86a and 84a to prevent the vapor or atmosphere of the chemical solution L3 from returning to the wafer W.
[0039]
In the state shown in FIG. 3, the lid 80 is in contact with the upper plate 34 of the pot 30, and the lid 70 is lowered to close the chemical liquid collecting groove M1. This example is the same as that in FIG. 1B, and the cleaning liquid L2 supplied from the nozzle 40 is separated and collected by the chemical liquid collecting groove M2.
[0040]
Next, a third embodiment of the present invention will be described. FIG. 4 is a cross-sectional view illustrating a configuration of a cleaning device 12 according to the third embodiment. In the third embodiment, gas-liquid separation boxes 90, 91 and 92 connected to the chemical liquid recovery grooves M1, M2 and M3 of the pot 30, respectively, are connected, and the separated gas is discharged by the exhaust pressure EX93. It has a configuration to discharge. In the case of the second embodiment, since gas-liquid separation is performed in the pot 30, when the chemical liquid is collected in the chemical liquid collecting grooves M1 and M3, the exhaust pressure of the exhaust force connected to the chemical liquid collecting groove M2 is reduced. In the third embodiment, gas-liquid separation is performed outside the pot 30.
[0041]
(Example)
When the cleaning apparatus according to the first embodiment is used, the exhaust pressure and the diameter required for the same size of the watermark and the particles on the wafer W are compared with the conventional apparatus (FIG. 5A). Configuration shown).
[0042]
[Table 1]

[0043]
Under these conditions, the flow rates required for the exhaust power were compared.
(Equation 1)

[0044]
As a result, the cleaning apparatus according to the first embodiment can reduce the required exhaust flow rate to 46.8% as compared with the related art, and it can be seen that a sufficient effect was obtained.
[0045]
Next, the results of improving the separation and collection efficiency by the cleaning device of the first embodiment will be described. 0.5 wt% HF was used for the chemical solution L1, and pure water was used as the rinse water for the chemical solution L2, and a series of steps of HF treatment, rinsing, and drying were performed on 50 wafers. The chemicals L1 and L2 supplied from the tank were sprayed on the wafer W via the nozzle 40, and the scattered chemicals L1 and L2 were recovered from the chemical recovery grooves M1 and M2, returned to the tank, and used repeatedly. The ability of fractional recovery was measured based on the HF concentration of the drug solution L1 and the amount of reduction. The concentration of the supply line for the chemical solution L1 was measured by an in-line concentration meter, and the amount of the chemical solution L1 used was calculated from the amount of decrease in the liquid level in the tank.
[0046]
[Table 2]

[0047]
As is clear from the above measurement results, it is understood that the separation and collection ability of the cleaning device of the present embodiment is improved as compared with the conventional technology.
[0048]
Next, a watermark and dust on the processed wafer were measured by a particle counter.
[0049]
[Table 3]

[0050]
As is clear from this result, it is understood that the number of particles is significantly reduced and the efficiency of the exhaust power is excellent.
[0051]
As described above, according to the present embodiment, it is possible to greatly reduce the evacuation power, and by using the chemical solution recovery and reuse system together, the amount of the chemical solution to be discarded in cleaning per wafer is reduced. It is possible to greatly reduce. The semiconductor cleaning device using the present technology can greatly contribute to global environmental protection by reducing necessary utilities, reducing the amount of chemical solution used, and ensuring separation and recovery / reuse.
[0052]
Although the preferred embodiment of the present invention has been described in detail, the present invention is not limited to the specific embodiment, and various modifications and changes may be made within the scope of the present invention described in the appended claims. Changes are possible.
[0053]
In the embodiment, a cleaning apparatus for a semiconductor wafer has been described as an example, but the present invention can also be applied to processing of a substrate other than a wafer, such as a liquid crystal substrate. Further, the shape, size, material, and the like of the pot can be appropriately changed without departing from the gist of the present invention. Further, the shape of the lid, the number of the lids, or the number of the collecting grooves can be appropriately changed.
[0054]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to the substrate processing apparatus which concerns on this invention, since the partition member (lid) arrange | positioned in a pot is moved and the collection | recovery groove | channel or space of a some processing liquid is formed, a some processing liquid is sorted efficiently. It can be collected and reused. Further, by closing the groove or space in which the processing liquid is not collected by the partition member, it is possible to reduce the space required for the evacuation power, and it is possible to improve the evacuation efficiency as compared with the related art. As a result, the processing liquid and / or its vapor and atmosphere can be efficiently sucked in the pot without increasing the exhaust capacity, and as a result, the number of particles on the wafer and the generation of watermarks are reduced. It becomes possible. Further, the use of a small exhausting power can reduce the size of the entire processing apparatus.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view illustrating a configuration of a cleaning device according to a first embodiment of the present invention.
FIG. 2 is a cross-sectional view illustrating a configuration of a cleaning device according to a second embodiment of the present invention.
FIG. 3 is a cross-sectional view illustrating a configuration of a cleaning device according to a second embodiment of the present invention.
FIG. 4 is a cross-sectional view illustrating a configuration of a cleaning device according to a third embodiment of the present invention.
FIG. 5A is a cross-sectional view showing an example of a configuration of a conventional cleaning device (horizontal separation type), and FIG. 5B is a configuration of a conventional cleaning device (vertical separation type). It is sectional drawing which shows an example.
[Explanation of symbols]
10 Cleaning equipment
20 Holder
21 Rotation axis
22 Holding surface
23 gripper
30 pots
31 opening
32 inner peripheral plate
33 Outer plate
34 Upper plate
35 bottom plate
36 Partition plate
40 nozzles
50 Drainage pipe
51 Drainage pipe
60 gas-liquid separation box
61 exhaust pipe
70 lid
72 Opening switching unit
74 Connection
76 opening
77 opening
78 opening
80 lid
84a Through hole
86 Divider
86a Through hole

Claims (18)

A holder for rotatably holding the substrate,
A supply unit for supplying a processing liquid onto the substrate,
Having a pot disposed on an outer periphery of the holding table and collecting a processing liquid scattered from the substrate,
The pot includes at least one partition member movable in the axial direction of the holding table, and can form a plurality of processing liquid recovery spaces inside by changing the position of the at least one partition member. Substrate processing equipment. The opening of the first processing liquid collecting space in the pot is closed when the partition member is at the first position, and the opening of the second processing liquid collecting space is closed. 2. The substrate processing apparatus according to 1. 2. An opening is formed in the second processing liquid collecting space, wherein the opening of the first processing liquid collecting space in the pot is closed when the partition member is at the second position. 3. The substrate processing apparatus according to claim 1. 4. The space according to claim 1, wherein the first processing liquid collecting space collects a first processing liquid, and the second processing liquid collecting space collects a second processing liquid. 5. Substrate processing equipment. The substrate processing apparatus further includes a drain pipe connected to the pot and a gas-liquid separator connected to the drain pipe, wherein the gas-liquid separator is connected to an exhaust power. 3. The substrate processing apparatus according to claim 1. The space for collecting the first processing liquid is formed on an inner peripheral side of the space for collecting the second processing liquid, and the first and second spaces for collecting the processing liquid are first and second. The substrate processing apparatus according to claim 5, wherein a drain pipe is connected to each of the drain pipes, and a gas-liquid separator is connected to the second drain pipe. The substrate processing apparatus according to claim 1, wherein the first or second space for collecting a processing liquid is sucked to a negative pressure by an exhaust pressure. A substrate processing apparatus having a function of supplying a processing liquid onto a rotatably held substrate and collecting a processing liquid scattered from the substrate in a pot,
The pot is disposed on an outer periphery of the holding table, and has a plurality of processing liquid collecting grooves formed therein for separating and collecting the processing liquid, and each of the plurality of processing liquid collecting grooves is movably provided. A substrate processing apparatus, which is separated from each other by a separated partition member. 9. The method according to claim 8, wherein when the partition member is at the first position, the first processing liquid recovery groove in the pot is in a usable state, and the second processing liquid recovery groove is in a non-use state. Substrate processing equipment. 9. The substrate according to claim 8, wherein when the partition member is at the second position, the first processing liquid recovery groove in the pot is in a non-use state, and the second processing liquid recovery groove is in a usable state. Processing equipment. The substrate processing apparatus according to claim 8, wherein the first and second processing liquid recovery grooves are arranged concentrically with the holding table. The holding table holds the substrate so as to be able to rotate substantially horizontally, and the partition member includes a first portion extending in a substantially horizontal direction, and a second portion inclined from the first portion. When the partitioning member is at the first position, the first surfaces of the first portion and the second portion form a part of the first processing liquid recovery groove, and the partitioning member is in the first position. The second surface, in which the first portion and the second portion are opposed to the first surface, when forming the second processing liquid, form a part of the second processing liquid collecting groove. , 9, 10 or 11. The substrate processing apparatus includes a nozzle capable of dropping a plurality of processing liquids onto the substrate on the holding table. When the first processing liquid is dropped from the nozzle, the first processing liquid is collected into the first processing liquid recovery groove. 12. When the first processing liquid is collected and the second processing liquid is dropped from the nozzle, the second processing liquid is recovered in the second processing liquid recovery groove. Or the substrate processing apparatus according to 12. 14. The substrate processing apparatus according to claim 8, wherein the first or second processing liquid collecting groove is sucked by a negative pressure. A processing method of a substrate processing apparatus including a holding table that rotatably holds a substrate, and a pot provided on an outer periphery of the holding table and having a function of collecting a processing liquid used for processing the substrate,
By moving a partition member in the pot to a first position, a space for collecting a first processing liquid corresponding to a first processing liquid supplied to a substrate is formed in the pot,
A substrate processing method, comprising: supplying a first processing liquid onto the substrate, and collecting the first processing liquid scattered from the substrate in a first processing liquid recovery space. 16. The substrate processing method according to claim 15, wherein when the partition member is at the first position, an opening of a second processing liquid collecting space in the pot is closed. In the substrate processing method, a space for collecting a second processing liquid corresponding to a second processing liquid supplied to the substrate is formed in the pot by moving the partition member to a second position. 16. The substrate processing method according to claim 15, wherein the second processing liquid is collected by a space for collecting the second processing liquid. 18. The substrate processing method according to claim 16, wherein the inside of the first or second processing liquid collecting space is set to a negative pressure.

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