JP2001267278A - Wafer-surface treating apparatus with waste-liquid recovering mechanism - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wafer-surface processing apparatus with a waste-liquid treating mechanism which can recover continuously, effectively and separately respective waste liquids, especially three or more kinds of waste liquids, while responding to the kinds of treating and cleaning liquids and can therefore improve the wafer producing effi ciency of the wafer-surface treating apparatus, and which has further such a wafer rotating holder that it can hold and rotate a very thin wafer having a thickness not larger than 100 μm only by its contacting with the outer periphery of the wafer and that it can further clean the wafer both by ultrasonic jetting nozzles and by brushes. SOLUTION: The wafer-surface treating apparatus is one for treating the surface of wafer by treating and cleaning liquids, and has a wafer rotating holder for rotating and holding the wafer subjecting to a surface treatment, and has a waste-liquid recovering mechanism provided in an up and down movable way in the periphery of the wafer rotating holder. The waste-liquid recovering mechanism comprises a plurality of annular waste-liquid recovering troughs so provided that they can be moved up and down relatively to each other. The plurality of annular waste-liquid recovering troughs are so used separately while responding to the kinds of the treating and cleaning liquids as to recover separately respective waste liquids.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a waste liquid recovery system in which, when a wafer surface is treated with a processing liquid or a cleaning liquid, respective waste liquids can be effectively separated and recovered according to the type of the processing liquid or the cleaning liquid. The present invention relates to a wafer surface treatment apparatus with a mechanism.

[0002]

[Related Art] In the process of manufacturing a device, in addition to an etching process for removing a damaged layer after back grinding, a developing solution is applied to the wafer, and a circuit pattern is exposed on the wafer surface. Development processing of a semiconductor circuit baked on a wafer coated with a developer, cleaning of the wafer surface, and the like can be given.

An apparatus used for this wafer surface treatment includes a wafer rotation holding device for chucking and rotating a wafer, a processing liquid supply means for supplying a required processing liquid (chemical solution) to the upper surface of the chucked wafer, and a cleaning liquid for cleaning the upper surface of the wafer. (For example, Japanese Patent Application Laid-Open No. 8-88168).

For example, conventional etching for removing a damaged layer after back grinding can be performed only once using a mixed acid (for example, hydrofluoric acid + nitric acid, etc.), and is disclosed in the above-mentioned publication. Thus, the processing liquid (for example, mixed acid) and the cleaning liquid may be recovered.

[0005] However, at present, the need for surface modification after the above-mentioned etching has emerged, and it is usual to perform one or more times of etching for the surface modification after the above-mentioned first etching. . As described above, if the surface treatment is performed a plurality of times, a longer time is required, which causes a new problem that the production efficiency is reduced. In addition, since a plurality of processing liquids (chemical liquids) are used, in consideration of the recovery of the waste liquid, an apparatus for collecting two types of used waste liquid, one type of processing liquid and one cleaning liquid, as in the above-described conventional technique, is not sufficient. In addition, a need has arisen for an apparatus capable of collecting three or more types of waste liquid.

On the other hand, when etching or cleaning a very thin wafer of 100 μm or less in recent years, one-side processing is required, and the rotation holding means also sucks the lower surface of the wafer as in the related art. It is becoming difficult to keep the rotation in the form of holding the rotation, and a new type of rotation holding means has been desired.

[0007]

SUMMARY OF THE INVENTION The present invention has been made in consideration of the above-mentioned problems, and it has been proposed to continuously and effectively discharge waste liquids, particularly three or more waste liquids, according to the types of processing liquid and cleaning liquid. It can be separated and collected, and therefore, the production efficiency can be improved. Further, a very thin wafer of 100 μm or less can be rotated and held by contacting only the outer peripheral portion thereof. It is an object of the present invention to provide a wafer surface treatment apparatus with a waste liquid recovery mechanism provided with a wafer rotation holding device that also enables brush cleaning.

[0008]

In order to solve the above-mentioned problems, a wafer surface treatment apparatus with a waste liquid recovery mechanism according to the present invention comprises:
A wafer surface treatment apparatus for treating a wafer surface with a treatment liquid or a cleaning liquid, comprising: a wafer rotation holding apparatus for rotating and holding a wafer to be surface-treated; and a waste liquid collecting mechanism provided up and down around the wafer rotation holding apparatus. The waste liquid collecting mechanism comprises a plurality of annular waste liquid collecting gutters provided so as to be able to move up and down with respect to each other. A plurality of annular waste liquid collecting gutters are selectively used depending on the types of the processing liquid and the cleaning liquid, and the respective waste liquids are separated. It is characterized by being collected. By continuously raising and lowering the above annular waste liquid collecting gutter, the processing liquid and the cleaning liquid used for the surface treatment of the wafer can be continuously collected, and the production efficiency can be improved.

If three annular waste liquid collecting gutters are provided,
There is an advantage that three kinds of waste liquids can be collected.

The wafer rotation holding device includes a rotating disk having a medium flow path formed on the upper surface, a through hole formed in the center of the rotating disk, and an upper surface of the rotating disk. A plurality of wafer receiving portions, and a wafer is placed above the rotating disk via the wafer receiving portion with a space therebetween, and when the rotating disk is rotated, Medium is discharged outward by centrifugal force due to rotation, thereby causing a reduced pressure state to appear in the medium flow path. The suction force in this reduced pressure state causes the rotating disk to pass through the through hole from the lower surface side. The suctioned medium is supplied to the upper surface of the rotating disk and continuously discharged outward through the medium flow path. Thus, as long as the rotating disk rotates, the medium flow path A reduced pressure state appears within the wafer, and the wafer is pulled by the suction force in the reduced pressure state. Preferably it has a structure which is adapted to rotate held by suction to the wafer receiving portion towards.

Even if a thin wafer having a thickness of about 100 μm or less is naturally warped, if the wafer is directly placed on the novel wafer rotation holding device used in the present invention and rotated and held, There is an advantage that the warpage of the wafer is eliminated by the centrifugal force due to the rotation and the rotation can be maintained without any trouble.

The novel wafer rotation holding device used in the present invention further has a medium forcible supply means for forcibly supplying a medium from the lower surface side of the rotating disk to the through hole, and maintains the reduced pressure state while maintaining the reduced pressure state. It is preferable that the medium is forcibly supplied to the through hole from the lower surface side of the rotating disk. With such a configuration, there is an advantage that a chemical solution supplied to the upper surface of the wafer for processing the upper surface of the wafer can be prevented from flowing to the lower surface of the wafer.

A vane plate is provided radially, spirally or spirally on the upper surface of the rotating disk, and the medium flow path is formed between the upper surface of the rotating disk and the lower surface of the wafer opposed to the upper surface of the rotating disk. Is preferred.

A rotating shaft having a hollow portion communicating with the through hole is formed in the center of the lower surface of the rotating disk, and the rotating shaft and the rotating disk are rotated when the rotating shaft is rotated. It is also possible that the medium sucked from the lower end opening of the hollow portion is supplied to the upper surface of the rotating disk through the hollow portion and the through hole.

If the apparatus is further provided with a decompression adjusting means which is mounted at an appropriate position on the rotary shaft and adjusts the degree of opening of the hollow portion to adjust the decompression state of the medium flow path, the wafer thickness can be reduced. Can be set freely according to the condition, and there is no accident such as deformation of the wafer due to too strong suction force.

The wafer receiving portion can be constituted by lower guide pins for receiving the lower surface of the wafer and outer guide pins for receiving the outer surface of the wafer. In addition, the wafer receiving portion may be installed anywhere as long as the receiving operation is not hindered as long as the wafer receiving portion is on the upper surface of the rotating disk. However, if the wafer receiving portion is provided on the upper surface of the blade, the upper surface space of the rotating disk can be effectively used. There is.

A baffle plate is provided above a through hole formed in the center of the rotating disk, and a medium supplied to the upper surface of the rotating disk through the through hole is provided by the baffle plate to the blade plate. In the case of a configuration in which the medium is guided in the direction, even if impurities and the like are mixed in the medium, the medium is not directly sprayed on the lower surface of the wafer, so that an accident such as contamination by impurities and the like and a wafer is broken during operation. There is an advantage that the upward blowing of the medium in the case can be prevented.

If the orientation flat (orientation flat) portion or the notch receiving portion for receiving the notch portion is provided on the upper surface of the rotating disk, the wafer is locked on the upper surface of the rotating disk. Will always rotate together. Therefore, even if a chemical solution or the like is poured onto the upper surface of the wafer during rotation holding of the wafer and a force is applied to the wafer in a direction opposite to the rotation direction,
The wafer always rotates together with the rotating disk, and there is no rotational deviation between the two, and there is an advantage that a problem due to the rotational deviation described below does not occur.

The medium may be a gas and / or a liquid,
That is, gas alone, for example, air, or liquid alone, for example, pure water,
In addition to a chemical solution or the like, both can be mixed and used.

[0020]

Embodiments of the present invention will be described below with reference to the accompanying drawings. It goes without saying that various modifications can be made without departing from the technical idea of the present invention.

FIG. 1 is a schematic cross-sectional side view of a wafer surface treatment apparatus with a waste liquid recovery mechanism according to the present invention, showing a state when a wafer is loaded or unloaded. FIG. 2 is a schematic cross-sectional side view showing the state in which the entire waste liquid recovery mechanism is raised from the state of FIG. 1 and the inner waste liquid recovery gutter is used.
FIG. 3 is a schematic cross-sectional side view illustrating the state in which only the inner waste liquid collecting gutter is lowered from the state of FIG. 2 to use the intermediate waste liquid collecting gutter. FIG. 4 is a schematic cross-sectional side view illustrating the state in which only the intermediate waste liquid collecting gutter is lowered from the state of FIG. 3 to use the outer waste liquid collecting gutter.

In FIG. 1 to FIG. 4, S is a wafer surface treatment apparatus with a waste liquid collecting mechanism of the present invention, which is provided in an annular waste liquid collecting mechanism 50 having a hollow part H at the center and inside the hollow part H. And a wafer rotation holding device 10. The wafer rotation holding device 10 includes a wafer holding portion 10a and a rotating shaft 20 that rotatably supports the wafer holding portion 10a. The waste liquid recovery mechanism 50
An annular outer slope member 52 inclined outwardly, and an outer rectangular tube portion 5 formed by bending a tip end of the outer slope member 52 inward.
And 4. Inside the outer slope member 52, there are provided an intermediate slope member 56 which is inclined in the same manner as the outer slope member 52, and an intermediate square tube portion 58 formed by bending the tip of the intermediate slope member 56 inward. ing. The intermediate slope member 56
Inside, an inner slope member 60 which is inclined in the same manner as the intermediate slope member 56, and an inner square cylindrical portion 62 formed by bending the tip of the intermediate slope member 56 inward.

The outer slope member 52 and the outer rectangular tube portion 54 can be moved up and down.
Numeral 0 is arranged to be vertically movable with respect to the wafer rotation holding device 10. The intermediate slope member 56 and the intermediate square tube portion 58 are vertically movable with respect to the outer slope member 52 and the outer square tube portion 54, and the outer surface of the intermediate slope member 56 is located on the inner surface of the outer slope member 52. The outer surface of the outer wall 58a of the intermediate square tube portion 58 is in contact with the inner wall 54 of the outer square tube portion 54.
It is slidable with the outer surface of b.

The inner slope member 60 and the inner square tube portion 62 are vertically movable with respect to the intermediate slope member 56 and the middle square tube portion 58, and the outer surface of the inner slope member 60 is connected to the middle slope member 56. And the outer surface of the outer wall 62a of the inner square tube portion 62 is slidable with the outer surface of the inner wall 58b of the middle square tube portion 58.

The outer slope member 52, the outer square tube portion 54,
An outer annular waste liquid collecting gutter 64 is formed by the intermediate slope member 56 and a part of the outer wall 58a of the intermediate square tube portion 58.
An intermediate annular waste liquid collecting gutter 66 is formed by the intermediate slope member 56, the intermediate square tube portion 58, the inner slope member 60, and a part of the outer wall 62a of the inner square tube portion 62. An inner annular waste liquid collecting gutter 68 is formed by the inner slope member 60 and the inner square tube portion 62.

Therefore, the waste liquid collecting mechanism 50 includes a plurality (three in the illustrated example) of annular waste liquid collecting troughs 64, 66, 68.
And the waste liquid collecting gutters 64, 66, 68 are vertically movably attached to each other. The waste liquid collecting troughs 64, 66,
The bottom surface of 68 is inclined in one direction, and waste liquid recovery pipes 70, 72, 74 are provided at the bottom of the inclination.
Numeral 76 denotes a treatment liquid injecting means for injecting a chemical solution or a cleaning liquid, and a plurality (three in the illustrated example) of injecting pipes 76a, 76b, 76c are vertically provided depending on the type of the chemical solution or the like to be injected. .

With the above-described structure, the action of the wafer surface treatment apparatus S with a waste liquid recovery mechanism of the present invention is achieved by mixed acid etching,
The case where dilute hydrofluoric acid etching and rinsing cleaning are performed will be described as an example. First, as shown in FIG.
Is positioned slightly lower than the wafer W holding position of the wafer rotation holding device 10 by the uppermost edge of the inner end of the outer slope member 52. In this state, the wafer W is held by the wafer rotation holding device 10.

Next, in order to carry out mixed acid etching, as shown in FIG. 2, the entirety of the waste liquid collecting mechanism 50 is raised so that the upper end edge of the inner wall 62b of the inner rectangular tube portion 62 is moved to the wafer W of the wafer rotation holding device 10. Is moved so as to be located near the holding position. In this state, while rotating the wafer W, the processing liquid injection means 76 is moved to the injection position, and mixed acid is injected from the mixed acid injection pipe 76a onto the upper surface of the rotating wafer W to perform mixed acid etching. At this time, the mixed acid poured on the upper surface of the wafer W is scattered outward by the centrifugal force of the rotating wafer W, and the scattered mixed acid is stored in the inner waste liquid collecting trough 68 through the opening 68a. Subsequently, it flows down according to the inclination of the bottom surface of the inner waste liquid collecting trough 68 and is collected through the mixed acid waste liquid collecting pipe 74.

In order to perform the diluted hydrofluoric acid etching, as shown in FIG. 3, the inner slope member 60 and the inner rectangular tube portion 62 are lowered from the state of FIG. The wafer W is moved to a position near the wafer W holding position of the holding device 10. In this state, while rotating the wafer W, dilute hydrofluoric acid is injected from the dilute hydrofluoric acid injection pipe 76b of the processing liquid injection means 76 to perform dilute hydrofluoric acid etching. At this time, the diluted hydrofluoric acid poured on the upper surface of the wafer W is scattered outward due to the centrifugal force of the rotating wafer W, and the scattered diluted hydrofluoric acid flows into the intermediate waste liquid collecting trough 66 through the opening 66a. Then, it flows down according to the inclination of the bottom surface of the intermediate waste liquid collecting gutter 66 and is collected through a waste liquid collecting pipe 72 for diluted hydrofluoric acid.

In order to perform the rinsing cleaning, as shown in FIG. 4, the intermediate slope member 56 and the intermediate square tube portion 5 are moved from the state shown in FIG.
8 is moved so that the upper end edge of the intermediate slope member 56 is positioned near the wafer W holding position of the wafer rotation holding device 10. In this state, the wafer W is rotated and pure water is poured from the pure water pouring pipe 76c of the processing liquid pouring means 76 to perform rinsing cleaning. At this time, the pure water poured on the upper surface of the wafer W is scattered outward by the centrifugal force of the rotating wafer W,
The scattered pure water is accommodated in the outer waste liquid collecting gutter 64 through the opening 64a, and then flows down according to the inclination of the bottom surface of the outer waste liquid collecting gutter 64 to flow into the waste liquid collecting pipe 70 for the rinsing liquid.
Collected via

After the above-described mixed acid etching, dilute hydrofluoric acid etching, and rinsing cleaning are completed, the intermediate slope member 56, the intermediate square tube portion 58, the inner slope member 60, and the inner square tube portion 62 are respectively raised and the waste liquid collecting mechanism 50 By raising the whole, as shown in FIG. 1, the waste liquid collecting mechanism 50 is set to be slightly lower than the uppermost edge of the inner end of the outer slope member 52 than the holding position of the wafer W of the wafer rotation holding device 10. I will position you. In this state, the wafer W is removed from the wafer rotation holding device 10.

As the above-described wafer rotation holding device 10, a conventionally known chuck means for holding a wafer in a rotating state may be used, but it is preferable to use a new wafer rotation holding device 10 as described below. . The structure will be described below with reference to FIGS.

FIG. 5 is a perspective view showing an example of a novel wafer rotating and holding apparatus used in the present invention, and FIG. 6 is a perspective view showing a state where a wafer is rotated and held by the wafer rotating and holding apparatus of FIG. FIG. 7 is a top view showing another example of the slat, and FIG. 8 is a top view showing another example of the slat.

In the drawing, reference numeral 10 denotes a novel wafer rotation holding device used in the present invention, which has a rotating disk 12. A through hole 14 is formed in the center of the rotating disk 12. On the upper surface of the rotating disk 12, a plurality of sheets (in the illustrated example, one
(Six) blades 16 are radially provided at predetermined intervals.

A wafer receiving portion 18 for receiving an outer peripheral portion of the wafer W is provided at an outer end of the upper surface of the plurality of blade plates 16. The shape of the wafer receiving portion 18 is the wafer W
There is no special limitation as long as you can receive the outer periphery of
In the illustrated example, it is a receiving step. The wafer receiving portion 18 does not necessarily need to be provided on the blade plate 16 and may be provided directly on the upper surface of the rotating disk 12 as long as there is no problem. The number of the wafer receiving portions 18 may be any number that can be rotated and held even when the wafer W is rotated, for example, three or more. In the illustrated example, four wafer receiving portions 18 are provided at symmetric positions. showed that.

Reference numeral 20 denotes a rotary shaft which is provided vertically at the center of the lower surface of the rotary disk 12, and a hollow portion 22 communicating with the through hole 14 is bored in the inside thereof. The hollow portion 22 opens at the lower end of the rotating shaft 20 to form a lower end opening 24.

At the lower end of the rotary shaft 20, pressure reduction adjusting means 26, in the illustrated example, a pressure reduction adjusting valve is attached. The decompression adjusting means 26 can control the amount of air flowing through the hollow portion 22 by adjusting the degree of opening of the hollow portion 22 of the rotary shaft 20. In the illustrated example, the case where the decompression adjusting means 26 is provided at the lower end of the rotary shaft 20 is shown. However, it is only necessary that the degree of opening of the hollow portion 22 can be adjusted. It can be installed at an appropriate position such as the upper part.

Reference numeral 28 denotes a pulley provided below the rotary shaft 20, and is connected to a motor pulley 32 of the motor 30 via a pulley belt 34. When the motor 30 is driven, the motor pulley 32 rotates, and the rotation is transmitted to the pulley 28 via a pulley belt 34, and the rotary shaft 20 is configured to rotate.

The operation of the above configuration will be described. In the wafer rotation holding device 10 used in the present invention, as the medium, for example, a gas such as air or pure water, a mixture of the two in addition to a liquid such as a chemical solution is used,
The case where air is used as a medium will be described as an example.

First, as shown in FIG. 6, the wafer W is placed above the upper surface of the rotating disk 12 via the wafer receiving portion 18, that is, with the space therebetween, specifically, the upper surface of the blade plate 16. It is arranged above with an interval. Further, the degree of opening of the hollow portion 22 of the rotary shaft 20 is adjusted by the pressure reduction adjusting means 26 so as to obtain an optimal pressure reduction state in accordance with the thickness of the wafer W. The degree of decompression decreases when the opening of the hollow portion 22 is widened, and the degree of decompression increases when the opening is narrowed.

The adjustment of the reduced pressure state is performed by the above-described hollow portion 2.
In addition to the opening degree of 2, the rotation speed of the rotating disk 12 can be adjusted. The faster the rotation of the rotating disk 12, the greater the degree of pressure reduction, and the slower the rotation, the smaller the degree of pressure reduction.

Further, if necessary, supply of a medium, for example, air, to the upper surface of the rotating disk 12 is performed by a medium (air) (not shown).
It is performed by the replenishing means, and the degree of pressure reduction can be adjusted by increasing or decreasing the amount of the replenishing medium (air). When the amount of the replenishment medium (air) is large, the degree of pressure reduction is small, and when the amount of the replenishment medium (air) is small, the degree of pressure reduction is large.

When the motor 30 is driven in this state, the rotation of the motor 30 is transmitted to the rotary shaft 20 via the motor pulley 32, the pulley belt 34 and the pulley 28,
The rotating disk 12 connected to the rotating shaft 20 rotates. When the rotating disk 12 rotates, the medium (air) on the upper surface of the rotating disk 12 is discharged outward by the centrifugal force due to the rotation, that is, a pair of blade plates 16, 16 opposed to the upper surface of the rotating disk 12. The rotating disk 1 is passed through a plurality of medium (air) channels 36 formed between the rotating disk 1 and the lower surface of the wafer W.
The medium (air) A on 2 is discharged outward.

By discharging the medium (air) A to the outside, the inside of the medium (air) flow path 36 is reduced in pressure. Due to the suction force in this reduced pressure state, the hollow portion 2
2 is supplied to the upper surface of the rotating disk 12 through the hollow portion 22 and the through-hole 14, and subsequently flows through the medium (air) flow path 36. Through the medium (air) passage 3
Then, the inside of 6 is kept under reduced pressure.

As long as the rotating disk 12 continues to rotate, the inside of the medium (air) flow path 36 is in a reduced pressure state. By the suction force of the medium (air) flow path 36 in a reduced pressure state, the outer periphery of the wafer W is fixedly held by the wafer receiving portion 18. At this time, the back surface of the wafer W is located above the upper surface of the blade 16 and does not contact the upper surface of the blade 16.

If the suction force due to this reduced pressure state is too strong,
In the case of a thin wafer W (for example, a thickness of 0.1 mm or less), there may be a problem that the central portion hangs down. However, in the present invention, the degree of opening of the hollow portion 22 of the rotating shaft 20 can be freely controlled by the decompression adjusting means 26.
The opening can be widened to reduce the degree of pressure reduction to weaken the suction force, so that the wafer does not sag and can be rotated and fixed to the wafer receiving portion 18.

In many cases, warpage occurs naturally on a thin wafer having a thickness of about 100 μm or less, but even in such a case, the wafer rotation holding apparatus of the present invention may be warped. When placed and rotated and held as it is, the warpage of the wafer is eliminated by the centrifugal force due to rotation and the wafer can be rotated and held without any trouble, so there is no need to correct the warp before rotating and holding as in the past, There is an advantage that the trouble is eliminated. Needless to say, if the rotation is stopped, the warp will be restored because the warp of the wafer is not corrected by the rotation holding.

In the example shown in FIG. 5 and FIG.
Is shown on the upper surface of the rotating disk 12 in a radial manner, but may be provided spirally as shown in FIG. 7 or spirally as shown in FIG. When providing the blades 16 in a radial or spiral shape, it is necessary to provide a plurality of medium flow paths 36 by using a plurality of the blades 16. However, when providing the blades 16 in a spiral shape, the blades 16 are provided. Although it is of course possible to use a plurality of sheets, as shown in FIG.
Thus, even if one medium flow path 36 is formed, the same operation and effect can be achieved.

In the illustrated example, an example is shown in which the blade plate 16 is erected on the upper surface of the rotating disk 12 as a separate body, but a medium flow path 36 is formed on the upper surface of the rotating disk 12 by the blade plate 16. For example, by forming a portion of the medium flow path 36 in a groove shape and leaving the portion of the blade 16 in a raised state, the blade 1 is integrally formed on the upper surface of the rotating disk 12.
6 can also be provided.

The novel wafer rotation holding device used in the present invention can be variously modified in addition to the illustrated example described above, and will be described below.

FIG. 9 is a schematic cross-sectional side view showing another example of the novel wafer rotation holding device used in the present invention. FIG. 10 is an enlarged top view of the rotating disk of FIG. FIG.
FIG. 1 is an enlarged view of a main part of the rotating disk of FIG. FIG. 12 shows FIG.
FIG.

In the examples shown in FIGS. 5 and 6, the case where air is used as the medium A has been described. However, other media can be used as described above. FIG. 9 shows a case where a pure water mist obtained by mixing pure water and air is used as the medium A. In the mixing chamber 40, pure water supplied from the pure water tank 42 and air separately supplied are mixed to form a pure water mist A composed of pure water and air, and supplied to the flow controller 26A via the conduit 44. You. The pure water mist A whose flow rate has been adjusted by the flow rate adjuster 26A is introduced into the upper surface side of the rotary disk 12 through the hollow portion 22 of the rotary shaft 20 as in the case of FIGS.

Note that the air in FIG. 9 may be sucked by the suction force due to the reduced pressure formed in the medium flow path 36, but in this embodiment, the air such as a compressor or a motor is used. Medium forced supply means 3
8, the pure water mist A mixed in the mixing chamber 40 is also affected by the medium forcible supply means 38, and the pure water mist A is supplied through the conduit 44 and the hollow portion 22 to the through hole. 14 is forcibly supplied. With this configuration, the chemical supplied to the upper surface of the wafer for processing the upper surface of the wafer is prevented from flowing to the lower surface of the wafer. This is performed by blowing the medium A forcibly supplied to the lower surface of the wafer.

In FIG. 9, reference numeral 46 denotes a baffle plate provided on the rotary disk 12 so as to be located above the through hole 14 formed in the center of the rotary disk 12. The medium (pure water mist) A supplied to the upper surface of the rotating disk 12 through the through hole 14 is guided by the baffle plate 46 in the direction of the blade 16.

The installation of the baffle plate 46 prevents the medium A from being directly blown onto the lower surface of the wafer W even when impurities are mixed in the medium A, thereby preventing an accident that the medium A is contaminated by impurities or the like, and also prevents the operation. There is an advantage that blowing out of the medium A upward when the wafer W breaks during the process is prevented.

When a pure water mist is used as the medium A, the back side rinse with the pure water mist is performed on the lower surface of the wafer when the etching is performed by supplying the etchant to the upper surface while rotating the wafer W. There is the advantage that it can be done simultaneously.

In the examples of FIGS. 9 to 12, the wafer receiving portion 1
8 are different from the examples shown in FIGS. 5 and 6, as shown in FIGS. 11 and 12, lower guide pins 18 a for receiving the lower surface of the wafer W and outer guide pins 18 b for receiving the outer surface of the wafer W. It is composed of The configuration other than the above description is the same as the configuration in FIGS.

When the rotating disk 12 is rotated by the above-described structure, as in FIGS. 5 and 6, the medium on the upper surface of the rotating disk 12 is evacuated outward by centrifugal force due to the rotation. The medium A passing through the hole 14 is guided laterally through the lower surface of the baffle plate 46, and then between the upper surface of the rotating disk 12, the pair of opposing blade plates 16, 16 and the lower surface of the wafer W. The medium A on the rotating disk 12 is discharged outward through the formed plurality of medium flow paths 36.

Further, as described above, by forcibly supplying the medium A, the medium A is actively sprayed on the lower surface of the wafer, and a chemical solution such as an etching solution supplied on the upper surface side of the wafer flows around the lower surface side of the wafer. Can be prevented. Needless to say, the forced supply of the medium A can be performed regardless of the presence or absence of the baffle plate 46.

In the novel wafer rotation holding device used in the present invention, when a chemical solution or the like is poured onto the upper surface of the wafer W in the rotation holding state, the wafer W is rotated in the direction opposite to the rotation direction of the rotation holding device 10 due to the viscosity of the chemical solution or the like. The rotation of the wafer W and the rotation of the rotation holding device 10 cause a rotation difference (rotation of the wafer decreases) (FIG. 13). Occurrence of scratches due to increased contact friction, unevenness of processing such as etching due to uneven rotation of the wafer, increase in the penetration of chemicals etc. to the lower surface of the wafer due to a decrease in centrifugal force due to a decrease in wafer rotation, etc. Problems may occur.

To prevent such a problem from occurring,
Orientation flat of wafer W (orientation flat)
Orientation flat stopper pin FP abutting on surface F (Fig. 14)
And a notch stopper pin NP (FIG. 15) abutting on the notch portion N of the wafer W is provided upright on the upper surface of the wafer W, so that there is no difference in rotation between the rotation of the wafer W and the rotation of the rotation holding device 10. By doing so, the above-described problem due to the deviation in rotation between the two does not occur.

The novel wafer rotation holding device used in the present invention can be suitably applied to an apparatus that performs processing while rotating a wafer, such as a spin etching apparatus, a spin drying apparatus, and a spin coating apparatus. it can.

[0063]

As described above, according to the wafer surface treatment apparatus of the present invention, each waste liquid, that is, a plurality of waste liquids, particularly three or more waste liquids, is continuously and in accordance with the types of the processing liquid and the cleaning liquid. It can be separated and recovered effectively, and therefore, the production efficiency can be improved.
An extremely thin wafer of μm or less can be rotated and held by contacting only the outer peripheral portion thereof, and the effect of enabling cleaning with an ultrasonic jet nozzle and brush cleaning can be achieved.

Further, by using the novel wafer rotation holding device having the above-described configuration, the pressure on the upper surface of the rotating disk can be reduced by a simple mechanism without the need for a vacuum source device, a pressurized air supply device or a gas supply device. A state appears, the wafer can be rotated and held without touching the back side of the wafer, and the degree of pressure reduction can be easily adjusted.
The effect that even a thin wafer (thickness of 0.1 mm or less) can be held in rotation without deformation can be achieved.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional side view of a wafer surface treatment apparatus with a waste liquid recovery mechanism of the present invention.

FIG. 2 is a schematic cross-sectional side view illustrating the state in which the entire waste liquid collecting mechanism is raised from the state of FIG. 1;

FIG. 3 is a schematic cross-sectional side view illustrating the state in which only the inner waste liquid collecting gutter is lowered from the state of FIG. 2;

4 is a schematic cross-sectional side view illustrating the state in which only the intermediate waste liquid collecting gutter is lowered from the state of FIG. 3;

FIG. 5 is a perspective explanatory view showing one embodiment of a wafer rotation holding device used in the present invention.

FIG. 6 is a perspective explanatory view showing a state in which the wafer is rotated and held by the wafer rotation holding device of FIG. 5;

FIG. 7 is a top view showing another example of the blade plate.

FIG. 8 is a top view showing another example of the blade plate.

FIG. 9 is a schematic cross-sectional side view showing another embodiment of the wafer rotation holding device used in the present invention.

FIG. 10 is an enlarged top view of the rotating disk of FIG. 9;

FIG. 11 is an enlarged view of a main part of the rotating disk of FIG. 10;

FIG. 12 is a partially sectional explanatory view of FIG. 11;

FIG. 13 is an explanatory top view showing a state of occurrence of a deviation between wafer rotation and rotation of the wafer rotation holding device when a chemical solution is poured onto the upper surface of the wafer held and rotated by the wafer rotation holding device.

FIG. 14 is an explanatory top view showing a state in which an orientation flat surface of a wafer is locked to an orientation flat stopper pin provided on a rotating disk.

FIG. 15 is an explanatory top view showing a state in which a notch portion of a wafer is engaged with a notch stopper pin provided upright on a rotating disk.

[Description of Signs] 10: Wafer rotation holding device, 12: Rotating disk, 14:
Through hole, 16: blade, 18: wafer receiving part, 18
a: lower guide pin, 18b: outer guide pin, 20:
Rotating shaft, 22: hollow, 24: lower end opening, 2
6: decompression adjusting means, 26A: flow rate regulator, 28: pulley, 30: motor, 32: motor pulley, 16, 16:
Blade: 34: pulley belt, 36: medium flow path, 38:
Medium forced supply means, 40: mixing chamber, 42: pure water tank, 4
4: conduit, 46: baffle plate, 50: waste liquid collecting mechanism, 52:
Outer slope member, 54: outer square tube portion, 56: middle slope member, 58: middle square tube member, 60: inner slope member, 62: inner square tube portion, 64, 66, 68: annular waste liquid collecting gutter, 70,
72, 74: waste liquid collecting pipe, 76: treatment liquid injection means, 76
a, 76b, 76c: injection pipe, A: medium, FP: orientation flat receiving part, NP: notch receiving part, W: wafer.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/027 H01L 21/30 569C (72) Inventor Hideyuki Murooka 1909 No. 1, 1909, Mitsutaka, Gunma-gun, Gunma-gun, Gunma Prefecture E F-term (Reference) 2E096 CA14 GA29 HA19 3B201 AA03 AB01 AB34 AB42 BB22 BB33 BB93 BB96 BB98 CC01 CD11 CD22 4F042 AA02 AA07 CC03 CC09 DF09 DF32 EB07 EB09 5F046 JA05 JA08 LA06

Claims (13)

[Claims] 1. A wafer surface treatment apparatus for treating a wafer surface with a treatment liquid or a cleaning liquid, comprising: a wafer rotation holding apparatus for rotating and holding a wafer to be surface-treated; and a vertically rotatable periphery of the wafer rotation holding apparatus. Having a waste liquid collecting mechanism, the waste liquid collecting mechanism comprises a plurality of annular waste liquid collecting gutters provided so as to be able to move up and down with respect to each other, and selectively uses a plurality of annular waste liquid collecting gutters depending on the types of the processing liquid and the cleaning liquid. A wafer surface treatment apparatus with a waste liquid recovery mechanism, wherein each waste liquid is separated and recovered. 2. The wafer surface treating apparatus according to claim 1, wherein three annular waste liquid collecting gutters are provided. 3. A rotating disk having a medium flow path formed on an upper surface thereof, a through hole formed at a center of the rotating disk, and an upper surface of the rotating disk. A plurality of wafer receiving portions, and a wafer is placed above the rotating disk via the wafer receiving portion with an interval therebetween, and when the rotating disk is rotated, the medium flow path The medium inside is discharged outward by centrifugal force due to rotation, thereby causing a depressurized state to appear in the medium flow path, and the suction force in this depressurized state causes the through hole from the lower surface side of the rotating disk to pass through. The medium aspirated through is supplied to the upper surface of the rotating disk and is continuously discharged outward through the medium flow path, thus the medium flowing as long as the rotating disk is rotating. A reduced pressure state appears in the path, and the suction force of the reduced pressure state moves the wafer downward. 3. The wafer surface treatment apparatus according to claim 1, wherein the wafer is suctioned and held by the wafer receiving portion. 4. A medium forcible supply means for forcibly supplying a medium from the lower surface of the rotating disk to the through hole, wherein the medium is forcibly supplied from the lower surface of the rotating disk to the through hole while maintaining the reduced pressure state. 4. The wafer surface treatment apparatus according to claim 1, wherein a medium is forcibly supplied. 5. A blade plate is radially provided on an upper surface of the rotating disk.
5. The wafer surface according to claim 3, wherein the medium flow path is formed between a blade plate facing the upper surface of the rotating disk and the lower surface of the wafer in a spiral or spiral shape. Processing equipment. 6. A rotating shaft provided with a hollow portion communicating with the through hole in an axial direction is vertically provided at a central portion of a lower surface of the rotating disk, and when the rotating shaft and the rotating disk are rotated, the rotating shaft is rotated. The medium sucked from the lower end opening of the hollow portion of the shaft is supplied to the upper surface of the rotating disk through the hollow portion and the through hole. Item 10. A wafer surface treatment apparatus according to item 9. 7. A decompression adjusting means which is attached to an appropriate position of the rotary shaft and adjusts a degree of opening of the hollow portion to adjust a decompression state of the medium flow path is further provided. The wafer surface treatment apparatus according to claim 6. 8. The wafer surface treatment apparatus according to claim 3, wherein said wafer receiving portion comprises a lower guide pin for receiving a lower surface of the wafer and an outer guide pin for receiving an outer surface of the wafer. 9. The wafer surface processing apparatus according to claim 4, wherein said wafer receiving portion is provided on an upper surface of a blade plate. 10. A baffle plate is provided above a through hole formed at the center of the rotating disk, and a medium supplied to the upper surface of the rotating disk via the through hole is provided to the blade by the baffle plate. 10. A guide in a plate direction.
The wafer surface treatment apparatus according to any one of claims 1 to 7. 11. The wafer rotation holding device according to claim 3, wherein an orientation flat receiving portion for receiving an orientation flat portion is provided on an upper surface of the rotating disk. 12. A notch receiving portion for receiving a notch portion is provided on an upper surface of the rotating disk.
0. The wafer rotation holding device according to any one of 0. 13. The apparatus according to claim 3, wherein the medium is a gas and / or a liquid.