CN114420543A - A kind of cleaning method of monolithic wafer - Google Patents
A kind of cleaning method of monolithic wafer Download PDFInfo
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- CN114420543A CN114420543A CN202111682638.4A CN202111682638A CN114420543A CN 114420543 A CN114420543 A CN 114420543A CN 202111682638 A CN202111682638 A CN 202111682638A CN 114420543 A CN114420543 A CN 114420543A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 107
- 238000000034 method Methods 0.000 title claims abstract description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 27
- 230000002378 acidificating effect Effects 0.000 claims abstract description 10
- 239000002245 particle Substances 0.000 claims abstract description 10
- 238000001514 detection method Methods 0.000 claims abstract description 7
- 239000000243 solution Substances 0.000 claims description 47
- 238000005507 spraying Methods 0.000 claims description 19
- 239000011259 mixed solution Substances 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 5
- 238000001179 sorption measurement Methods 0.000 abstract description 3
- 239000007921 spray Substances 0.000 description 22
- 239000012459 cleaning agent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
本发明涉及一种单片式晶圆的清洗方法，包括：将需要清洗的晶圆置于清洗槽内，所述晶圆通过所述清洗槽底部提供的负压吸附固定；向所述晶圆的表面喷淋碱性清洗液；向所述晶圆的表面喷淋纯水；向所述晶圆的表面喷淋酸性清洗液；向所述晶圆的表面喷淋纯水；对所述晶圆的表面进行干燥处理，并进行表面颗粒检测。本发明的清洗方法相较于传统的清洗工艺，舍弃了接触式的机械夹持，而采用非接触式的负压吸附固定，从而避免了机械夹持过程中的颗粒粘附；本发明采用喷淋清洗的方式，从而避免了晶圆在清洗过程中被清洗液过度蚀刻，进而能够相应地节约清洗过程中纯水的用量。The invention relates to a cleaning method for a single-piece wafer, comprising: placing a wafer to be cleaned in a cleaning tank, and the wafer is adsorbed and fixed by a negative pressure provided at the bottom of the cleaning tank; The surface of the wafer is sprayed with alkaline cleaning solution; the surface of the wafer is sprayed with pure water; the surface of the wafer is sprayed with an acidic cleaning solution; the surface of the wafer is sprayed with pure water; the surface of the wafer is sprayed with pure water; The round surfaces were dried and subjected to surface particle detection. Compared with the traditional cleaning process, the cleaning method of the present invention abandons contact-type mechanical clamping, and adopts non-contact negative pressure adsorption and fixation, thereby avoiding particle adhesion during the mechanical clamping process; The method of shower cleaning prevents the wafer from being over-etched by the cleaning solution during the cleaning process, thereby saving the consumption of pure water in the cleaning process accordingly.
Description
技术领域technical field
本发明涉及半导体制造技术领域，尤其涉及一种单片式晶圆的清洗方法。The invention relates to the technical field of semiconductor manufacturing, and in particular, to a cleaning method for a single wafer.
背景技术Background technique
晶圆在抛光的过程中，可能会吸附颗粒、油污或杂质等，因此需要化学清洗剂或是物理过程对晶圆的表面进行清洗，而所采用的化学清洗剂又可能会对晶圆的表面产生蚀刻，故又需要大量的纯水对晶圆的表面进行冲洗，从而获得具有洁净表面的晶圆。During the polishing process of the wafer, particles, oil or impurities may be adsorbed. Therefore, chemical cleaning agents or physical processes are required to clean the surface of the wafer, and the chemical cleaning agent used may affect the surface of the wafer. Etching occurs, so a large amount of pure water is needed to rinse the surface of the wafer, so as to obtain a wafer with a clean surface.
发明内容SUMMARY OF THE INVENTION
本发明的目的是针对现有技术中的不足，提供一种单片式晶圆的清洗方法。The purpose of the present invention is to provide a cleaning method for a monolithic wafer in view of the deficiencies in the prior art.
为实现上述目的，本发明采取的技术方案是：For realizing the above-mentioned purpose, the technical scheme that the present invention takes is:
本发明提供一种单片式晶圆的清洗方法，包括：The present invention provides a method for cleaning a monolithic wafer, comprising:
S1、将需要清洗的晶圆置于清洗槽内，所述晶圆通过所述清洗槽底部提供的负压吸附固定；S1, the wafer to be cleaned is placed in a cleaning tank, and the wafer is adsorbed and fixed by the negative pressure provided at the bottom of the cleaning tank;
S2、向所述晶圆的表面喷淋碱性清洗液；S2, spraying alkaline cleaning solution to the surface of the wafer;
S3、向所述晶圆的表面喷淋纯水；S3, spray pure water to the surface of the wafer;
S4、向所述晶圆的表面喷淋酸性清洗液；S4, spray acid cleaning solution to the surface of described wafer;
S5、向所述晶圆的表面喷淋纯水；S5, spray pure water to the surface of the wafer;
S6、对所述晶圆的表面进行干燥处理，并进行表面颗粒检测；若检测结果符合预定要求，则清洗完成，否则将所述晶圆重新置于清洗槽内，并重复步骤S2-S5；S6, drying the surface of the wafer, and performing surface particle detection; if the detection result meets the predetermined requirements, the cleaning is completed, otherwise, the wafer is placed in the cleaning tank again, and steps S2-S5 are repeated;
步骤S2-S5中，向所述晶圆表面喷淋的液体在所述清洗槽底部提供的负压作用下，通过所述清洗槽底部开设的排液槽排出。In steps S2-S5, the liquid sprayed on the surface of the wafer is discharged through the drain groove opened at the bottom of the cleaning tank under the action of the negative pressure provided at the bottom of the cleaning tank.
优选地，步骤S2中，所述碱性清洗液为NH3·H2O、H2O2以及H2O的混合溶液。Preferably, in step S2, the alkaline cleaning solution is a mixed solution of NH 3 ·H 2 O, H 2 O 2 and H 2 O.
优选地，所述碱性清洗液的质量配比为NH3·H2O:H2O2:H2O＝(1-3)：(1-3)：(10-30)。Preferably, the mass ratio of the alkaline cleaning solution is NH 3 ·H 2 O:H 2 O 2 :H 2 O=(1-3):(1-3):(10-30).
优选地，所述碱性清洗液的温度为40℃-80℃，所述碱性清洗液的喷淋时间为3min-7min。Preferably, the temperature of the alkaline cleaning solution is 40°C-80°C, and the spraying time of the alkaline cleaning solution is 3min-7min.
优选地，步骤S3中，所述纯水的喷淋时间为1min-3min。Preferably, in step S3, the spraying time of the pure water is 1min-3min.
优选地，步骤S4中，所述酸性清洗液为HCl、H2O2以及H2O的混合溶液。Preferably, in step S4, the acidic cleaning solution is a mixed solution of HCl, H 2 O 2 and H 2 O.
优选地，所述酸性清洗液的质量配比为HCl:H2O2:H2O＝(1-3)：(1-3)：(20-40)。Preferably, the mass ratio of the acidic cleaning solution is HCl:H 2 O 2 :H 2 O=(1-3):(1-3):(20-40).
优选地，所述酸性清洗液的温度为10℃-50℃，所述碱性清洗液的喷淋时间为3min-7min。Preferably, the temperature of the acidic cleaning solution is 10°C-50°C, and the spraying time of the alkaline cleaning solution is 3min-7min.
优选地，步骤S5中，所述纯水的喷淋时间为1min-3min。Preferably, in step S5, the spraying time of the pure water is 1min-3min.
本发明采用以上技术方案，与现有技术相比，具有如下技术效果：The present invention adopts the above technical scheme, compared with the prior art, has the following technical effects:
本发明的清洗方法相较于传统的清洗工艺，舍弃了接触式的机械夹持，而采用非接触式的负压吸附固定，从而避免了机械夹持过程中的颗粒粘附；本发明采用喷淋清洗的方式，从而避免了晶圆在清洗过程中被清洗液过度蚀刻，进而能够相应地节约清洗过程中纯水的用量。Compared with the traditional cleaning process, the cleaning method of the present invention abandons contact-type mechanical clamping, and adopts non-contact negative pressure adsorption and fixation, thereby avoiding particle adhesion during the mechanical clamping process; The method of shower cleaning prevents the wafer from being over-etched by the cleaning solution during the cleaning process, thereby saving the consumption of pure water in the cleaning process accordingly.
具体实施方式Detailed ways
下面将对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be described clearly and completely below. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present invention.
需要说明的是，在不冲突的情况下，本发明中的实施例及实施例中的特征可以相互组合。It should be noted that the embodiments of the present invention and the features of the embodiments may be combined with each other under the condition of no conflict.
下面结合具体实施例对本发明作进一步说明，但不作为本发明的限定。The present invention will be further described below in conjunction with specific embodiments, but not as a limitation of the present invention.
实施例1Example 1
本实施例提供一种单片式晶圆的清洗方法，包括：This embodiment provides a method for cleaning a single wafer, including:
S1、将需要清洗的晶圆置于清洗槽内，所述晶圆通过所述清洗槽底部提供的负压吸附固定；S1, the wafer to be cleaned is placed in a cleaning tank, and the wafer is adsorbed and fixed by the negative pressure provided at the bottom of the cleaning tank;
S2、向所述晶圆的表面喷淋碱性清洗液，所述碱性清洗液为NH3·H2O、H2O2以及H2O的混合溶液，其质量配比为NH3·H2O:H2O2:H2O＝1:1:10；所述碱性清洗液的温度为40℃，所述碱性清洗液的喷淋时间为7min；S2, spray alkaline cleaning solution to the surface of the wafer, the alkaline cleaning solution is a mixed solution of NH 3 ·H 2 O, H 2 O 2 and H 2 O, and its mass ratio is NH 3 · H 2 O:H 2 O 2 :H 2 O=1:1:10; the temperature of the alkaline cleaning solution is 40°C, and the spraying time of the alkaline cleaning solution is 7min;
S3、向所述晶圆的表面喷淋纯水，所述纯水的喷淋时间为3min；S3, spray pure water to the surface of described wafer, the spray time of described pure water is 3min;
S4、向所述晶圆的表面喷淋酸性清洗液，所述酸性清洗液为HCl、H2O2以及H2O的混合溶液，其质量配比为HCl:H2O2:H2O＝1:1:20；所述酸性清洗液的温度为10℃，所述碱性清洗液的喷淋时间为7min；S4, spray acid cleaning solution to the surface of the wafer, the acid cleaning solution is a mixed solution of HCl, H 2 O 2 and H 2 O, and its mass ratio is HCl:H 2 O 2 :H 2 O =1:1:20; the temperature of the acidic cleaning solution is 10°C, and the spraying time of the alkaline cleaning solution is 7min;
S5、向所述晶圆的表面喷淋纯水，所述纯水的喷淋时间为3min；S5, spray pure water to the surface of described wafer, the spray time of described pure water is 3min;
S6、对所述晶圆的表面进行干燥处理，并进行表面颗粒检测：合格率为96％，粗糙度(Ra)为0.11μm；S6, drying the surface of the wafer, and performing surface particle detection: the pass rate is 96%, and the roughness (Ra) is 0.11 μm;
步骤S2-S5中，向所述晶圆表面喷淋的液体在所述清洗槽底部提供的负压作用下，通过所述清洗槽底部开设的排液槽排出。In steps S2-S5, the liquid sprayed on the surface of the wafer is discharged through the drain groove opened at the bottom of the cleaning tank under the action of the negative pressure provided at the bottom of the cleaning tank.
实施例2Example 2
本实施例提供一种单片式晶圆的清洗方法，包括：This embodiment provides a method for cleaning a single wafer, including:
S1、将需要清洗的晶圆置于清洗槽内，所述晶圆通过所述清洗槽底部提供的负压吸附固定；S1, the wafer to be cleaned is placed in a cleaning tank, and the wafer is adsorbed and fixed by the negative pressure provided at the bottom of the cleaning tank;
S2、向所述晶圆的表面喷淋碱性清洗液，所述碱性清洗液为NH3·H2O、H2O2以及H2O的混合溶液，其质量配比为NH3·H2O:H2O2:H2O＝1:1.5:20；所述碱性清洗液的温度为60℃，所述碱性清洗液的喷淋时间为5min；S2, spray an alkaline cleaning solution to the surface of the wafer, the alkaline cleaning solution is a mixed solution of NH 3 ·H 2 O, H 2 O 2 and H 2 O, and its mass ratio is NH 3 · H 2 O:H 2 O 2 :H 2 O=1:1.5:20; the temperature of the alkaline cleaning solution is 60°C, and the spraying time of the alkaline cleaning solution is 5min;
S3、向所述晶圆的表面喷淋纯水，所述纯水的喷淋时间为2min；S3, spray pure water to the surface of described wafer, the spray time of described pure water is 2min;
S4、向所述晶圆的表面喷淋酸性清洗液，所述酸性清洗液为HCl、H2O2以及H2O的混合溶液，其质量配比为HCl:H2O2:H2O＝1:1:30；所述酸性清洗液的温度为25℃，所述碱性清洗液的喷淋时间为5min；S4, spray acid cleaning solution to the surface of the wafer, the acid cleaning solution is a mixed solution of HCl, H 2 O 2 and H 2 O, and its mass ratio is HCl:H 2 O 2 :H 2 O =1:1:30; the temperature of the acidic cleaning solution is 25°C, and the spraying time of the alkaline cleaning solution is 5min;
S5、向所述晶圆的表面喷淋纯水，所述纯水的喷淋时间为2min；S5, spray pure water to the surface of described wafer, the spray time of described pure water is 2min;
S6、对所述晶圆的表面进行干燥处理，并进行表面颗粒检测：合格率为94％，粗糙度(Ra)为0.12μm；S6, drying the surface of the wafer, and performing surface particle detection: the pass rate is 94%, and the roughness (Ra) is 0.12 μm;
步骤S2-S5中，向所述晶圆表面喷淋的液体在所述清洗槽底部提供的负压作用下，通过所述清洗槽底部开设的排液槽排出。In steps S2-S5, the liquid sprayed on the surface of the wafer is discharged through the drain groove opened at the bottom of the cleaning tank under the action of the negative pressure provided at the bottom of the cleaning tank.
实施例3Example 3
本实施例提供一种单片式晶圆的清洗方法，包括：This embodiment provides a method for cleaning a single wafer, including:
S1、将需要清洗的晶圆置于清洗槽内，所述晶圆通过所述清洗槽底部提供的负压吸附固定；S1, the wafer to be cleaned is placed in a cleaning tank, and the wafer is adsorbed and fixed by the negative pressure provided at the bottom of the cleaning tank;
S2、向所述晶圆的表面喷淋碱性清洗液，所述碱性清洗液为NH3·H2O、H2O2以及H2O的混合溶液，其质量配比为NH3·H2O:H2O2:H2O＝1:3:30；所述碱性清洗液的温度为80℃，所述碱性清洗液的喷淋时间为3min；S2, spray alkaline cleaning solution to the surface of the wafer, the alkaline cleaning solution is a mixed solution of NH 3 ·H 2 O, H 2 O 2 and H 2 O, and its mass ratio is NH 3 · H 2 O:H 2 O 2 :H 2 O=1:3:30; the temperature of the alkaline cleaning solution is 80°C, and the spraying time of the alkaline cleaning solution is 3min;
S3、向所述晶圆的表面喷淋纯水，所述纯水的喷淋时间为1min；S3, spray pure water to the surface of described wafer, the spray time of described pure water is 1min;
S4、向所述晶圆的表面喷淋酸性清洗液，所述酸性清洗液为HCl、H2O2以及H2O的混合溶液，其质量配比为HCl:H2O2:H2O＝1:1.5:40；所述酸性清洗液的温度为40℃，所述碱性清洗液的喷淋时间为3min；S4, spray acid cleaning solution to the surface of the wafer, the acid cleaning solution is a mixed solution of HCl, H 2 O 2 and H 2 O, and its mass ratio is HCl:H 2 O 2 :H 2 O =1:1.5:40; the temperature of the acidic cleaning solution is 40°C, and the spraying time of the alkaline cleaning solution is 3min;
S5、向所述晶圆的表面喷淋纯水，所述纯水的喷淋时间为3min；S5, spray pure water to the surface of described wafer, the spray time of described pure water is 3min;
S6、对所述晶圆的表面进行干燥处理，并进行表面颗粒检测：合格率为95％，粗糙度(Ra)为0.11μm。S6, drying the surface of the wafer, and performing surface particle detection: the pass rate is 95%, and the roughness (Ra) is 0.11 μm.
步骤S2-S5中，向所述晶圆表面喷淋的液体在所述清洗槽底部提供的负压作用下，通过所述清洗槽底部开设的排液槽排出。In steps S2-S5, the liquid sprayed on the surface of the wafer is discharged through the drain groove opened at the bottom of the cleaning tank under the action of the negative pressure provided at the bottom of the cleaning tank.
综上所述，本发明的清洗方法相较于传统的清洗工艺，舍弃了接触式的机械夹持，而采用非接触式的负压吸附固定，从而避免了机械夹持过程中的颗粒粘附；本发明采用喷淋清洗的方式，从而避免了晶圆在清洗过程中被清洗液过度蚀刻，进而能够相应地节约清洗过程中纯水的用量。To sum up, compared with the traditional cleaning process, the cleaning method of the present invention abandons the contact-type mechanical clamping, and adopts the non-contact negative pressure adsorption and fixation, thereby avoiding the particle adhesion during the mechanical clamping process. The present invention adopts the method of spray cleaning, thereby avoiding excessive etching of the wafer by the cleaning liquid during the cleaning process, thereby correspondingly saving the consumption of pure water in the cleaning process.
以上所述仅为本发明较佳的实施例，并非因此限制本发明的实施方式及保护范围，对于本领域技术人员而言，应当能够意识到凡运用本发明说明书内容所作出的等同替换和显而易见的变化所得到的方案，均应当包含在本发明的保护范围内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the embodiments and protection scope of the present invention. For those skilled in the art, they should be able to realize that all equivalents and obvious substitutions made by using the contents of the description of the present invention The solutions obtained by the changes of the above should be included in the protection scope of the present invention.
Claims (9)
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111682638.4A CN114420543A (en) | 2021-12-31 | 2021-12-31 | A kind of cleaning method of monolithic wafer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111682638.4A CN114420543A (en) | 2021-12-31 | 2021-12-31 | A kind of cleaning method of monolithic wafer |
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