JP2004310051A - Method and apparatus for manufacturing ultra-thin electrooptical display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a high luminance, high definition, and high performance ultra-thin electrooptical display device such as a transmission type LCD (liquid crystal display), a reflection type LCD, a top emission type organic EL (electroluminescence), and a bottom emission type organic EL by using an electrooptical display element of a single crystal semiconductor having high electron-mobility and hole-mobility. <P>SOLUTION: A low-porosity Si layer 11a, a high-porosity Si layer 11b, and a low-porosity Si layer 11c are formed on a single crystal Si substrate 10 by an anodization method. The single crystal Si layer 12 of the epitaxial growth is formed on the low-porosity Si layer 11c. Display elements and peripheral circuits of an LCD are formed in the single crystal Si layer 12 to produce an electrooptical display element substrate layer, on which an alignment film 13b is formed and alignment treatment is performed. Further, a counter substrate 14 on which an alignment film 14b is formed and alignment treatment is performed is overlayed with a prescribed liquid crystal gap and sealed and fixed. The single crystal Si substrate 10 is separated from the high-porosity Si layer 11. A support substrate is laminated on the low-porosity Si layer 11c after the separation, and divided into each electrooptical display device. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a high-luminance, high-definition, high-performance transmissive liquid crystal display (LCD), a reflective liquid crystal display, a semi-transmissive liquid crystal display, a top-emitting organic EL (Electro Luminescence) display, and a bottom-emitting liquid crystal display. The present invention relates to a method and an apparatus for manufacturing an ultra-thin electro-optical display device including an electro-optical display element made of an ultra-thin single crystal semiconductor such as an organic EL display.

  In the case of a transmissive high-temperature polycrystalline silicon (hereinafter referred to as "poly Si") TFT (Thin Film Transistor) LCD, a microcrystalline Si thin film is formed on quartz glass by low-pressure CVD (Chemical Vapor Deposition), and further, Si ions are formed. After the amorphous Si is formed by implantation, a large-diameter poly-Si thin film is formed by, for example, a solid phase growth method at 620 ° C. for 12 hours, and a display element and peripheral circuits of an LCD are formed on the thin film.

  In the case of a low-temperature poly-Si TFT transmission type, semi-transmission type or reflection type LCD or organic EL display (hereinafter referred to as "organic EL"), plasma CVD is performed on a low strain point glass such as borosilicate glass or aluminosilicate glass. An amorphous Si thin film is formed by, for example, a large-diameter poly-Si thin film is formed by crystallization by excimer laser annealing (ELA), and an LCD display element and a peripheral circuit or an organic EL display element and a peripheral circuit are formed on the thin film. Has formed.

  However, in the case of these high-temperature poly-Si TFTLCDs, low-temperature poly-Si TFTLCDs or organic ELs, the peripheral circuits of the LCDs or organic ELs are formed on a poly-Si thin film whose electron-hole mobility is not higher than that of single-crystal Si. Device characteristics, high-speed operability, power consumption, and the like become problems.

  2. Description of the Related Art In recent years, a reflective LCD called LCOS (Liquid Crystal On Silicon) has been adopted for a projector or the like. This utilizes the high electron-hole mobility of single crystal Si. LCOS incorporates not only display elements and peripheral drive circuits but also video signal processing circuits and memory circuits on the surface of a single-crystal Si substrate using general-purpose MOS LSI technology, and features high brightness, high definition, and high functionality. Having.

  However, in the LCOS, a TFT leak current due to strong incident light leakage easily causes a problem in image quality and reliability. For this reason, the countermeasures against leakage light cause an increase in the number of processing steps, a decrease in yield, and a decrease in productivity. Therefore, the use of an SOI (Silicon On Insulator) substrate is conceivable, but in this case, since the single crystal Si substrate does not transmit light, it is limited to a reflection type LCD and a top emission type organic EL.

  The inventor has proposed a method of manufacturing a transmission type LCD using this single crystal Si substrate in Patent Document 1. In the transmission type LCD in this case, a single crystal Si substrate is formed with a pixel display portion embedded with a transparent resin including a peripheral circuit and a reflection film on the surface thereof, and the back surface thereof is ground and polished to form a single crystal Si thin film matrix array. And a color filter substrate and a transparent resin.

  By the way, as a manufacturing method of an SOI substrate, an ELTRAN (trademark) technology of Canon Inc., a SMART CUT (trademark) technology of Soitec (France), a SIMOX (Separation by IMplanted OXygen) technology, and the like are known.

  For example, in the ELTRAN method, as disclosed in Patent Document 2, the surface of a seed Si wafer is first chemically treated by anodic oxidation into a porous sponge structure having an infinite number of fine holes of 0.01 μm in diameter. A single crystal Si layer is epitaxially grown on the porous Si. Further, the surface of the single crystal Si layer is thermally oxidized to form an insulating film, which is bonded to the handle Si wafer, and then the seed Si wafer is separated at the porous layer by water jet. Thereafter, the porous layer left on the handle Si wafer is removed by ultra-high selective etching. Finally, an SOI substrate is manufactured by smoothing the surface by hydrogen annealing. Patent Document 3 discloses that separation of a seed Si wafer is performed by pulling and peeling a porous layer.

  On the other hand, in the SMART CUT method, as described in Patent Documents 4, 5, 6, 7, 8 and the like, a high hydrogen ion implantation layer is formed at a predetermined depth from the surface of a Si wafer, and separately thermally oxidized. After being bonded to the Si wafer on which the insulating film is formed, the SOI substrate is manufactured by performing a peeling heat treatment and peeling in the high hydrogen ion implantation region, and finally smoothing the surface by hydrogen annealing treatment.

Japanese Patent No. 3218861 Japanese Patent No. 2608351 JP-A-11-195562 Japanese Patent No. 3048201 JP 2000-196047 A JP 2001-77044 A JP-A-5-211128 Japanese Patent No. 3127892

  The point of the ELTRAN method described in Patent Literature 2 is to separate a seed Si wafer at a porous layer by a water jet. However, as the size of the wafer increases, it becomes difficult to separate the seed Si wafer, so that cracks, chips, and cracks are generated. For example, yield and quality are likely to be problems. Further, in the method described in Patent Document 3, since the porous layer is pulled and peeled, the yield and quality tend to be problems due to cracks, chips, cracks, and the like.

  On the other hand, the point of the SMART CUT method described in Patent Documents 4, 5, 6, 7 and the like is that, by peeling annealing, strain is generated in the high hydrogen ion implanted layer due to the pressure action and crystal rearrangement action in the hydrogen microbubbles, The two substrates are separated by pulling. However, as the size of the wafer increases, it becomes difficult to separate the two substrates, so that the yield and the quality tend to be problematic due to the occurrence of cracks, chips or cracks.

  In any of the SOI substrates, an ultra-thin single-crystal Si layer is formed on the surface of the Si substrate via an insulating film, but the thick Si substrate basically serves as a support for obtaining mechanical strength. Therefore, although an extra portion is finally removed by back grinding or the like, the thickness cannot be reduced to, for example, about 1 to 10 μm in order to avoid generation of cracks, chips, and cracks.

  Even in the case of using the method described in Patent Document 1 proposed by the inventor, in order to finally grind and polish the back surface of the substrate to remove an excess portion, for example, when the thickness is reduced to about 1 to 10 μm, cracking, chipping, Cracks may occur.

  Therefore, in the present invention, a high-brightness, high-definition, high-performance transmissive LCD, reflective LCD, transflective LCD is used by using a single crystal semiconductor electro-optical display element having high electron / hole mobility. It is an object to obtain an ultra-thin electro-optical display device such as a top emission type organic EL and a bottom emission type organic EL.

  According to a first method for manufacturing an ultra-thin electro-optical display device of the present invention, a step of forming a porous semiconductor layer on a support substrate made of a single crystal semiconductor, and a step of forming a single crystal semiconductor on the support substrate with the porous semiconductor layer interposed therebetween Forming a layer, forming a display element and a peripheral circuit on the single crystal semiconductor layer, separating the support substrate from the porous semiconductor layer, and forming a layer on the back surface of the separated ultra-thin electro-optical display element substrate. The method includes a step of attaching a support, and a step of dividing the ultra-thin electro-optical display device after attaching the support.

  In this manufacturing method, a porous semiconductor layer and a single crystal semiconductor layer are formed on a support substrate made of a single crystal semiconductor, a display element and a peripheral circuit are formed on the single crystal semiconductor layer, and the support substrate is separated from the porous layer semiconductor layer. By separation, an ultra-thin electro-optical display element substrate layer in which a display element and a peripheral circuit are formed on a single crystal semiconductor layer having high electron / hole mobility is obtained. Then, the separated ultra-thin electro-optical display element substrate layer is bonded to a support, and divided into respective ultra-thin electro-optical display devices while being held by the support, so that cracks, chips, and cracks are generated at the time of division. An ultra-thin electro-optical display device having an ultra-thin electro-optical display element substrate using an electro-optical display element made of a single crystal semiconductor having high electron and hole mobilities without generation is obtained.

  According to a second method for manufacturing an ultra-thin electro-optical display device of the present invention, a step of forming a porous semiconductor layer on both a seed substrate and a support substrate each made of a single crystal semiconductor; Forming a single crystal semiconductor layer via a porous semiconductor layer, a step of forming an insulating layer via a single crystal semiconductor layer on at least one of a seed substrate and a support substrate, A step of bonding the surface on which the insulating layer is formed and the surface on which the single crystal semiconductor layer is formed via the porous semiconductor layer; a step of separating the seed substrate from the porous semiconductor layer of the seed substrate; Etching the surface of the single crystal semiconductor layer exposed by the above at least by hydrogen annealing to flatten it, and forming a display element and a peripheral circuit on the single crystal semiconductor layer of the support substrate And a step of separating the support substrate from the porous semiconductor layer of the support substrate, a step of attaching a support to the back surface of the separated ultra-thin electro-optical display element substrate, and after attaching the support, Dividing into an ultra-thin electro-optical display device.

  In the present production method, a porous semiconductor layer and a single-crystal semiconductor layer are formed on both a seed substrate and a support substrate, and these two substrates are bonded to each other via an insulating layer. Separated from the porous semiconductor layer, if necessary, by etching the remaining porous semiconductor layer with a hydrofluoric acid-based etchant, and further etching by a hydrogen annealing treatment to form a flattened single crystal semiconductor layer. An ultra-thin SOI layer is formed via the semiconductor layer. Thereafter, a display element and a peripheral circuit are formed on the single crystal semiconductor layer in the ultra-thin SOI layer of the support substrate, and the ultra-thin SOI layer is separated from the support substrate at the porous semiconductor layer. A single crystal that has high electron and hole mobilities without breaking, chipping, or cracking at the time of division by dividing into each ultra-thin electro-optical display device while being bonded and held by a support An ultra-thin electro-optical display device having an electro-optical display element substrate having an ultra-thin SOI structure using an electro-optical display element made of a semiconductor can be obtained.

  According to a third method for manufacturing an ultra-thin electro-optical display device of the present invention, a step of forming a display element and a peripheral circuit on a support substrate made of a single crystal semiconductor, a step of forming an ion-implanted layer on the support substrate, Performing an annealing process for the substrate, separating the support substrate from the strained portion of the ion-implanted layer, bonding the support to the back surface of the separated ultra-thin electro-optical display element substrate, and after bonding the support, Dividing into each ultra-thin electro-optical display device.

  In the present manufacturing method, a display element and peripheral circuits are formed on a support substrate made of a single crystal semiconductor to form an ultra-thin electro-optical display element substrate layer, and separated from the support substrate at a strained portion of the ion implantation layer. After the separation, the ultra-thin electro-optical display element substrate layer and the support are bonded to each other, and are divided into the respective ultra-thin electro-optical display devices while being held by the support, so that cracks, chips, and cracks occur at the time of division. Thus, an electro-optical display device having an ultra-thin electro-optical display element substrate using an electro-optical display element made of a single crystal semiconductor having high electron and hole mobilities can be obtained.

  A fourth method of manufacturing an ultra-thin electro-optical display device according to the present invention includes the steps of: forming an ion-implanted layer on a seed substrate made of a single-crystal semiconductor; and forming an insulating layer on a support substrate made of a single-crystal semiconductor. A step of bonding the ion-implanted layer of the seed substrate and the insulating layer of the support substrate, covalently bonding the ion-implanted layer and the insulating layer by heat treatment to form a single crystal semiconductor layer, and performing an annealing treatment for peeling; A step of separating the substrate from the strained portion of the ion-implanted layer of the same seed substrate; a step of etching and flattening the surface of the single crystal semiconductor layer by at least hydrogen annealing; A step of forming a peripheral circuit, a step of forming an ion-implanted layer on the support substrate after these steps, and a step of performing an annealing treatment for separation, and a step of separating the support substrate from a strained portion of the ion-implanted layer of the support substrate. And a step of the step of attaching the support to the rear surface of the ultra-thin electro-optic display substrate after separation, after pasting the support, and a step of dividing each ultra slim electrooptic display device.

  In the present manufacturing method, a support substrate provided with an insulating layer is attached to a seed substrate provided with an ion-implanted layer, a single-crystal semiconductor layer is formed by heat treatment, and the seed substrate is subjected to ion implantation of the same seed substrate after annealing for peeling. Separated from the strained part of the layer, the surface of the single crystal semiconductor layer is etched with a hydrofluoric acid-based etchant as needed, and furthermore, the surface of the single crystal semiconductor layer is etched and flattened by hydrogen annealing to support An ultra-thin SOI layer is formed on a substrate. After that, a display element and a peripheral circuit are formed on the single crystal semiconductor layer in the ultra-thin SOI layer to form an electro-optical display element substrate layer of the ultra-thin SOI layer. Further, an ion-implanted layer is formed on the support substrate, and after the annealing treatment for peeling, the ultra-thin SOI layer electro-optical display element substrate layer is separated from the support substrate at the strained portion of the ion-implanted layer, and after this separation, the substrate is bonded to the support. A single-crystal semiconductor with high electron and hole mobilities without breaking, chipping, or cracking when divided by dividing into ultra-thin electro-optical display devices while holding and holding by a support An ultra-thin electro-optical display device having an electro-optical display element substrate having an ultra-thin SOI structure using an electro-optical display element made of

  According to a fifth method for manufacturing an ultra-thin electro-optical display device of the present invention, a step of forming an ion-implanted layer on a seed substrate made of a single-crystal semiconductor and a step of forming a porous semiconductor layer on a support substrate made of a single-crystal semiconductor A step of forming a single-crystal semiconductor layer over the support substrate over the porous semiconductor layer, a step of forming an insulating layer over the single-crystal semiconductor layer, and a step of forming an ion-implanted layer of the seed substrate and the support substrate. Bonding the insulating layer with the insulating layer of the seed substrate by heat treatment to form a single crystal semiconductor layer by covalently bonding the ion implanted layer of the seed substrate and the insulating layer of the supporting substrate; Separating the surface of the single crystal semiconductor layer by at least hydrogen annealing to flatten the surface of the single crystal semiconductor layer, and forming a display element and a peripheral circuit on the single crystal semiconductor layer of the support substrate. A step of separating the supporting substrate from the porous semiconductor layer, a step of attaching a support to the back surface of the separated ultra-thin electro-optical display element substrate, and after attaching the support, each ultra-thin electro-optical display device And a step of dividing into two.

  In this manufacturing method, a porous semiconductor layer, a single crystal semiconductor layer, and a supporting substrate on which an insulating layer is formed are attached to a seed substrate on which an ion implanted layer is formed, and the ion implanted layer of the seed substrate and the insulating layer of the supporting substrate are heat-treated. And a covalent bond to form a single crystal semiconductor layer, and after annealing treatment for separation, the seed substrate is separated at the strained portion of the ion implantation layer, and the surface of the single crystal semiconductor layer is etched with a hydrofluoric acid-based etchant as necessary. Further, the surface of the single crystal semiconductor layer is etched and flattened by hydrogen annealing, whereby an ultra-thin SOI layer is formed on the supporting substrate via the porous semiconductor layer. Thereafter, a display element and a peripheral circuit are formed on the single crystal semiconductor layer in the ultra-thin SOI layer to form an electro-optical display element substrate layer having an ultra-thin SOI structure. The layer is separated from the support substrate, bonded to the support after the separation, and divided into each ultra-thin electro-optical display device while being held by the support, so that cracks, chips, and cracks are generated at the time of division. In addition, an ultra-thin electro-optical display device having an electro-optical display substrate having an ultra-thin SOI structure using an electro-optical display element made of a single crystal semiconductor having high electron / hole mobility can be obtained.

  In the first to fifth methods of manufacturing an electro-optical display device according to the present invention, the support substrate is separated from the single-crystal semiconductor layer at least along a division line in a division region when the electro-optical display device is divided. It is desirable to perform the process after forming a groove up to the strained portion of the porous semiconductor layer or the ion implantation layer. Accordingly, since the electro-optical display element substrate layer having an ultra-thin or ultra-thin SOI structure separated from the support substrate is divided in advance, the support substrate can be easily separated. In forming the groove, the electro-optical display element substrate layer having the ultra-thin or ultra-thin SOI structure is supported by the support substrate, so that the occurrence of cracks, chips, and cracks during the groove formation is prevented.

  Separation of the porous semiconductor layer or the ion-implanted layer after the annealing treatment for peeling from the strained portion is performed by applying gas, liquid, or gas to the rotating porous semiconductor layer or the strained portion of the ion-implanted layer after peeling annealing. By jetting a high-pressure fluid jet of a mixture of water and liquid. In particular, in the case of jetting a high-pressure fluid jet of a mixture of gas and liquid, gas bubbles are mixed into the liquid, and the impact can be more effectively separated by the bursting of the bubbles.

  Here, if high-pressure fluid jet injection is performed by adding fine solids, the fine solids directly strike the porous semiconductor layer or the strained portion of the ion-implanted layer after the annealing treatment for peeling. Separation can be performed effectively. Also, in the case of high-pressure fluid jet injection, if ultrasonic waves are applied, ultrasonic vibrations act on the porous semiconductor layer or on the strained portion of the ion-implanted layer after the annealing treatment for peeling, and the porous semiconductor layer is more effectively used. Separation from the strained portion of the layer or the ion-implanted layer after the peeling annealing treatment can be performed.

  Further, separation from the porous semiconductor layer or separation from the ion implantation layer can be performed by laser processing or laser water jet processing on the rotating porous semiconductor layer or ion implantation layer. In particular, when a groove is formed before separation, laser processing or laser water jet processing is performed on the rotating porous semiconductor layer or ion-implanted layer, and the rotating porous semiconductor layer or the annealing treatment for peeling is performed. Separation from the porous semiconductor layer or the ion-implanted layer can be performed more effectively by jetting the high-pressure fluid jet to the strained portion of the ion-implanted layer later.

  Here, in the method for manufacturing an ultra-thin electro-optical display device according to the present invention, the opposing substrate is overlapped with a predetermined liquid crystal gap on the electro-optical display element substrate of the single-crystal semiconductor layer and sealed. Separation, adhesion of the support to the ultra-thin electro-optical display element substrate after separation with an adhesive, liquid crystal injection sealing after dividing into each ultra-thin electro-optical display device, and ultra-thin electro-optical display An ultra-thin reflective LCD as a device can be obtained.

  Alternatively, an ultra-thin reflective LCD is formed by laminating and sealing an opposing substrate on a single crystal semiconductor layer electro-optical display device substrate via a predetermined liquid crystal gap, and then separating the supporting substrate. It is obtained by attaching a good chip of a support to an excellent chip in a thin electro-optical display element substrate with an adhesive, dividing the respective ultra-thin electro-optical display devices, and injecting and sealing a liquid crystal.

  Further, in the method for manufacturing an ultra-thin electro-optical display device according to the present invention, after attaching a support to the ultra-thin electro-optical display element substrate after separation with an adhesive, forming a transparent electrode and forming an alignment film, The counter substrate subjected to the alignment treatment is overlapped with the electro-optical display element substrate subjected to the alignment film formation and the alignment treatment through a predetermined liquid crystal gap and sealed, and the liquid crystal is injected and sealed after being divided into each ultra-thin electro-optical display device. Thereby, an ultra-thin reflective LCD can be obtained.

  In addition, an ultra-thin reflective LCD is formed by attaching a support to an ultra-thin electro-optical display element substrate after separation with an adhesive, forming a transparent electrode, forming an alignment film, and performing an alignment treatment. A good chip of the substrate is overlapped with a good chip in the electro-optic display element substrate on which an alignment film is formed and subjected to an alignment treatment through a predetermined liquid crystal gap, sealed, and divided into each ultra-thin electro-optical display device. It is obtained by dividing into each ultra-thin electro-optical display device after injection sealing or liquid crystal injection sealing.

  Alternatively, in the case of an ultra-thin reflective LCD, a support is attached to an ultra-thin electro-optical display element substrate after separation with an adhesive, an alignment film is formed, an alignment process is performed, and a transparent electrode is formed on a non-defective chip. The non-defective chips of the counter substrate cut by performing the alignment film formation and the alignment treatment are overlapped and sealed via a predetermined liquid crystal gap, and the liquid crystal is injected and sealed.

  Further, in the ultra-thin reflective LCD, a non-defective chip in the opposing substrate is overlapped with a non-defective chip in the electro-optical display element substrate of the single crystal semiconductor layer via a predetermined liquid crystal gap and sealed, and the liquid crystal is injected and sealed. This is obtained by separating the support substrate later, attaching the support with an adhesive to the separated ultra-thin electro-optical display element substrate, and dividing the substrate into each ultra-thin electro-optical display device.

  Alternatively, in the ultra-thin reflective LCD, a non-defective chip in the opto-substrate is overlapped and sealed with a non-defective chip in the electro-optical display element substrate of the single crystal semiconductor layer through a predetermined liquid crystal gap, and the liquid crystal is injected and sealed. It is obtained by separating the support substrate later, pasting the good chip of the support to the good chip in the separated ultra-thin electro-optical display element substrate with an adhesive, and dividing into each ultra-thin electro-optical display device. .

Here, in the case of an ultra-thin reflective LCD, a high thermal conductive glass having a thermal conductivity of 1 (W / m · K) or more that satisfies optical characteristics is used as a counter substrate material and a dustproof glass material having a low reflective film. For example, quartz glass, transparent crystallized glass (Neoceram, Clearceram, Zerodur, etc.), and even higher heat conductive glass such as highly transmissive ceramic polycrystals ｛Electrodeposited MgO of oxide crystals (cubic, equiaxed hexagonal) ), Sintered MgO (cubic), Y ₂ O ₃ , Gd ₂ O ₃ , CaO (calcia), AL ₂ O ₃ (hexagonal sapphire), BeO (beryllia), ZrO ₂ , polycrystalline sapphire, PbO, TiO ₂ or a double oxide crystal such as YAG (Yttrium Aluminum Garnet), MgAl ₂ O ₄ (spinel; 71.8 Al ₂ O ₃ , 28.2 MgO), LiNbO ₃ , BaTiO ₃ , Bi ₁₂ GeO ₂₀ , SrTiO ₂ , 3Al ₂ O ₃ .2SiO ₂ , Al ₂ O ₃ .SiO ₂ , CaCO ₂ , ZrSiO ₄ , (Pb, La) (Zr, Ti) O ₃ etc., CaF ₂ (calcium fluoride) High heat-dissipation effect for strong incident light by bonding a transparent substrate such as highly transparent ceramic polycrystalline body coated with a vapor-phase synthetic diamond film and transparent crystallized glass, quartz, etc. with a light-resistant transparent adhesive To realize high brightness, high definition, and long life, and improve quality and reliability.

  Also, for example, a low-reflection film is formed from a YAG or spinel dust-proof glass having no birefringence formed on the incident side, a counter substrate of YAG or spinel, a liquid crystal layer, an ultra-thin electro-optical display element substrate, and a metal supporting substrate. The film-formed YAG or spinel dust-proof glass is bonded to the YAG or spinel counter substrate with a light-resistant transparent adhesive, and the ultra-thin electro-optical display element substrate and the metal support substrate are bonded with high thermal conductivity and conductivity. It may be bonded with an agent.

  On the other hand, the ultra-thin transmissive LCD as the ultra-thin electro-optical display device corresponds to the pixel opening of the display section of the electro-optical display element substrate in the method of manufacturing the ultra-thin electro-optical display device of the present invention. An electro-optical display element in which a portion to be removed is removed by etching, the removed portion is buried with a light-transmitting material, the surface is flattened, and a transparent electrode connected to a pixel display element is formed thereon to form an alignment film and perform alignment processing. A counter electrode, on which a transparent electrode is formed, an alignment film is formed, and an alignment process is performed, is overlapped and sealed via a predetermined liquid crystal gap. Then, the support substrate is separated, and light is transmitted through at least the pixel openings of the display unit. The transparent material is exposed, a transparent support is attached to the separated ultra-thin electro-optical display element substrate with a transparent adhesive, and liquid crystal injection sealing is performed after dividing into each ultra-thin electro-optical display device. Get by. As a result, an ultra-thin transmissive LCD in which the pixel openings of the display section of the ultra-thin electro-optical display element substrate having low light transmittance and hardly sufficiently transmitting light are formed of a light transmissive material can be obtained.

  Alternatively, in an ultra-thin transmissive LCD, a portion corresponding to a pixel opening of a display portion of an electro-optical display element substrate is removed by etching, and the removed portion is buried with a light transmitting material to flatten the surface. A transparent electrode connected to the pixel display element is formed on the electro-optical display element substrate on which the alignment film is formed and the alignment processing is performed, and the counter substrate on which the transparent electrode is formed and the alignment film is formed and the alignment processing is performed via a predetermined liquid crystal gap. After overlapping and sealing, the support substrate is separated to expose at least the light-transmitting material in the pixel opening of the display unit, and the transparent support is provided on a good chip in the ultra-thin electro-optical display device substrate after the separation. It is obtained by attaching a good chip of the body with a transparent adhesive, dividing it into each ultra-thin electro-optical display device, and injecting and sealing liquid crystal.

  Further, in an ultra-thin transmissive LCD, a portion corresponding to a pixel opening of a display portion of an electro-optical display element substrate is removed by etching, and the removed portion is buried with a light transmitting material to flatten the surface. On the non-defective chip in the electro-optical display element substrate on which the transparent electrode connected to the pixel display element is formed and the alignment film is formed and the alignment process is performed, the non-defective chip of the opposite substrate on which the transparent electrode is formed and the alignment film is formed and the alignment process is performed Then, the liquid crystal is injected and sealed after being overlapped and sealed via a predetermined liquid crystal gap, the support substrate is separated, and at least the light-transmitting material at the pixel openings of the display section is exposed, and the ultra-thin after this separation is performed. It is obtained by attaching a transparent support to the electro-optical display element substrate with a transparent adhesive, and dividing the substrate into ultra-thin electro-optical display devices.

  Further, in an ultra-thin transmissive LCD, a portion corresponding to a pixel opening of a display portion of an electro-optical display element substrate is removed by etching, and the removed portion is buried with a light transmitting material to flatten the surface. A non-defective chip in an electro-optical display element substrate on which a transparent electrode connected to the pixel display element is formed and an alignment film is formed and the alignment process is performed, and a non-defective chip on an opposite substrate on which a transparent electrode is formed and the alignment film is formed and the alignment process is performed, After overlapping and sealing through a predetermined liquid crystal gap, the liquid crystal is injected and sealed, the support substrate is separated, and at least the light transmitting material at the pixel opening of the display portion is exposed, and the ultra-thin electric device after the separation is separated. It is obtained by attaching a good chip of a transparent support to a good chip in the optical display element substrate with a transparent adhesive, and dividing it into each ultra-thin electro-optical display device.

  In addition, an ultra-thin transmissive LCD is configured such that a non-defective chip in an electro-optical display element substrate on which an alignment film is formed and an alignment process is performed, and a non-defective chip of an opposite substrate on which a transparent electrode is formed and an alignment film is formed and a predetermined process are performed After overlapping and sealing via a liquid crystal gap, liquid crystal injection sealing is performed, the support substrate is separated, and a transparent support is attached with a transparent adhesive in the ultra-thin electro-optical display device substrate after the separation, It is obtained by dividing into each ultra-thin electro-optical display device.

  In addition, an ultra-thin transmissive LCD is configured such that a non-defective chip in an electro-optical display element substrate on which an alignment film is formed and an alignment process is performed, and a non-defective chip of an opposite substrate on which a transparent electrode is formed and the alignment film is formed and an alignment process is performed is fixed. After overlapping and sealing through a liquid crystal gap, the liquid crystal is injected and sealed, the support substrate is separated, and the non-defective chips of the transparent support are transparently transferred to the non-defective chips in the ultra-thin electro-optical display element substrate after the separation. It is obtained by sticking with an adhesive and dividing into each ultra-thin electro-optical display device.

  Further, in the method for manufacturing an ultra-thin electro-optical display device according to the present invention, after attaching a transparent support to the ultra-thin electro-optical display device substrate after separation with a transparent adhesive, A portion corresponding to the pixel opening of the display portion is removed by etching, the removed portion is buried with a light-transmitting material, the surface is flattened, and a transparent electrode connected to the pixel display element is formed thereon to form an alignment film. A transparent electrode is formed on the alignment-processed electro-optical display element substrate, the alignment film is formed, and the counter-substrate on which the alignment process is performed is overlapped and sealed via a predetermined liquid crystal gap. It is obtained by injecting and sealing liquid crystal. As a result, an ultra-thin transmissive LCD in which the pixel openings of the display section of the ultra-thin electro-optical display element substrate having low light transmittance and hardly sufficiently transmitting light are formed of a light transmissive material can be obtained.

  In the case of an ultra-thin transmissive LCD, a transparent support is attached to the ultra-thin electro-optical display element substrate after separation with a transparent adhesive, and the transparent support is attached to a pixel opening of a display section of the electro-optical display element substrate. The corresponding portion is removed by etching, the removed portion is buried with a light transmissive material, the surface is flattened, a transparent electrode connected to a pixel display element is formed thereon, and an alignment film is formed and alignment processing is performed. Transparent electrodes are formed on the good chips in the element substrate, the alignment film is formed, the alignment processing is performed, and the non-defective chips of the opposite substrate that are cut by performing the alignment treatment are overlapped and sealed via a predetermined liquid crystal gap, and each ultra-thin electro-optical display is performed. It is obtained by dividing the device and then injecting and sealing the liquid crystal, or after injecting and sealing the liquid crystal and dividing the device into each ultra-thin electro-optical display device.

  Alternatively, an ultra-thin transmissive LCD is prepared by attaching a transparent support to a separated ultra-thin electro-optical display element substrate with a transparent adhesive, and then applying the transparent support to a pixel opening of a display section of the electro-optical display element substrate. The corresponding portion was removed by etching, the removed portion was buried with a light transmissive material, the surface was flattened, a transparent electrode connected to the pixel display element was formed thereon, and an alignment film was formed and the alignment treatment was performed to cut the electricity. A non-defective chip of the optical display element substrate, a transparent electrode is formed on the non-defective substrate, an alignment film is formed, and alignment processing is performed. Is obtained by

Here, the ultra-thin transmissive LCD is a highly thermally conductive glass such as quartz glass having a thermal conductivity of 1 (W / m · K) or more that satisfies the optical characteristics of the separated ultra-thin electro-optical display element substrate. Transparent crystallized glass (Neoceram, Clearceram, Zerodur, etc.), higher heat conductive glass such as highly transmissive ceramic polycrystals ｛Fused MgO (cubic, equiaxed hexagonal) of oxide crystals, sintering MgO _{(cubic), Y 2 O 3, Gd} 2 O 3, CaO ( calcia), _AL 2 _{O 3} (hexagonal sapphire), BeO (beryllia), ZrO _2, polycrystalline sapphire, PbO, etc. TiO _2, or YAG of double oxide crystal _{(Yttrium Aluminum Garnet), MgAl 2} O 4 ( _{spinel; 71.8Al 2 O 3, 28.2MgO)} , LiNbO 3, BaTiO 3, Bi 12 GeO 20, _{rTiO 2, 3Al 2 O 3 ·} 2SiO 2, Al 2 O 3 · SiO 2, CaCO 2, ZrSiO 4, (Pb, La) (Zr, Ti) O 3 , etc.}, _CaF 2 ((calcium fluoride), gas High heat-dissipation effect on strong incident light by bonding a transparent support substrate such as a highly transmissive ceramic polycrystalline body coated with a phase-synthetic diamond film and a transparent crystallized glass or quartz with a light-resistant transparent adhesive To realize high brightness, high definition, and long life, and improve quality and reliability.
In addition, by using the high heat conductive glass also for the counter substrate, the dust-proof glass on which the low reflection film is formed on the incident side, and the dust-proof glass on which the low reflection film is formed on the emission side, a higher heat dissipation effect may be expected. Needless to say.

  Also, for example, a single crystal sapphire dustproof glass having a low reflection film formed from the incident side, a single crystal sapphire opposing substrate, a liquid crystal layer, an ultra-thin electro-optical display element substrate, a single crystal sapphire support substrate and a low reflection film are formed. The structure may be a single-crystal sapphire dust-proof glass, and they may be bonded to each other with a light-resistant transparent adhesive.

  By the way, a transparent electrode and an opposing substrate on which a microlens array which functions as a condensing lens formed by forming an alignment film and functioning as a condensing lens, and a pixel opening of a display section are etched to bury a light transmitting material to flatten the surface, and display After the transparent electrode connected to the element and the ultra-thin electro-optical display element substrate on which an alignment film is formed and subjected to an alignment treatment are overlapped and sealed to inject liquid crystal, the support substrate is formed of a porous semiconductor layer or an ion injection layer. A transparent support substrate with a microlens array that functions as a field lens is transparently formed on an ultra-thin electro-optical display element substrate that separates from the distorted part of the substrate and exposes the light-transmitting material by etching the peeling residue as necessary. The dual microlens structure bonded with adhesive condenses light with a double microlens function that is more accurate than the conventional dual microlens structure Because the highest degree to enhance it is possible effective aperture ratio of a pixel to enhance the utilization efficiency of the light source light by a further high luminance, high definition, transmissive LCD projector a long life can be realized.

  In addition, a transparent substrate and a counter substrate with a reflective film formed around the microlens array that functions as a condensing lens formed by forming an alignment film and an alignment treatment, and a light-transmitting material is buried by etching the pixel opening of the display unit to flatten the surface. After the transparent electrode connected to the display element and the ultra-thin electro-optical display element substrate on which the alignment treatment is performed by forming an alignment film and overlapping and sealing and liquid crystal injection sealing, the support substrate is a porous semiconductor layer or The ultra-thin electro-optical display element substrate, which is separated from the strained part of the ion-implanted layer and the light-transmitting material is exposed by etching the peeling residue as necessary, has low reflection around the microlens array that functions as a field lens. The dual micro-lens structure, in which a transparent support substrate with a light-shielding film formed on it is bonded with a transparent adhesive, condenses light with a high-precision double micro-lens function to use the light from the light source. Since the efficiency is increased to increase the effective aperture ratio of the pixel to the highest level, and unnecessary incident light and reflected light are removed, a transmission type LCD for a projector with higher brightness, higher contrast, higher definition, and longer life can be realized. .

By the way, after removing the single crystal semiconductor layer at the pixel opening in the display region, an insulating film and a light-shielding metal film are formed in this order, and then a light-transmitting material is buried and the surface is flattened. The light shielding effect, particularly in the case of a black metal film, can prevent light leaking to the display element due to strong incident light due to its low reflectivity, so that image quality can be improved.
At this time, by setting the light-shielding metal film on the inner wall of each pixel opening to the ground potential, charge-up of each part due to strong incident light can be prevented, so that leakage current of the TFT is prevented, and high brightness, high definition, and high brightness are achieved. A functional transmission type LCD for projector can be realized.

  On the other hand, an ultra-thin transflective LCD as an ultra-thin electro-optical display device is a method for manufacturing an ultra-thin electro-optical display device according to the present invention. The corresponding portion is removed by etching, the removed portion is buried with a light transmissive material, the surface is flattened, and further, a pixel electrode of two regions of reflection and transmission connected to a pixel display element is formed thereon to form an alignment film and A transparent electrode is formed on the alignment-processed electro-optical display element substrate, an alignment film is formed on the alignment film, and the alignment-processed counter substrate is overlapped and sealed via a predetermined liquid crystal gap, and then the support substrate is separated. The light transmissive material in the pixel openings is exposed, and a transparent support is attached to the separated ultra-thin electro-optical display element substrate with a transparent adhesive, and is separated into each ultra-thin electro-optical display device. After obtained by injecting liquid crystal sealing to. As a result, an ultra-thin transflective LCD having a low light transmittance and having a pixel opening of a display portion of an ultra-thin electro-optical display element substrate formed of a light-transmissive material that is difficult to sufficiently transmit light can be obtained.

  Alternatively, an ultra-thin transflective LCD removes a portion corresponding to a pixel opening of a display portion of an electro-optical display element substrate by etching, fills the removed portion with a light transmissive material, planarizes the surface, and further comprises: On the electro-optic display element substrate on which an alignment film is formed and alignment is performed by forming pixel electrodes in two regions of reflection and transmission connected to the pixel display element, a counter substrate on which an alignment film is formed and alignment processing is performed by forming a transparent electrode. After overlapping and sealing via a predetermined liquid crystal gap, the support substrate is separated to expose at least the light-transmitting material in the pixel openings of the display unit, and the ultra-thin electro-optical display device substrate after the separation is separated. A non-defective chip of a transparent support is attached to the non-defective chip with a transparent adhesive, divided into each ultra-thin electro-optical display device, and sealed by injecting liquid crystal.

  Further, in the ultra-thin transflective LCD, a portion corresponding to a pixel opening of a display portion of the electro-optical display element substrate is removed by etching, and the removed portion is buried with a light transmitting material to flatten the surface. A transparent electrode is formed on a non-defective chip in the electro-optical display element substrate on which an alignment film is formed and alignment processing is performed by forming a pixel electrode in two regions of reflection and transmission connected to the pixel display element, and forming an alignment film and alignment processing. After the non-defective chips of the opposite substrate are overlapped and sealed via a predetermined liquid crystal gap, the liquid crystal is injected and sealed, and after separating the supporting substrate, at least the light transmitting material at the pixel opening of the display unit is exposed. Then, a transparent support is attached to the separated ultra-thin electro-optical display element substrate with a transparent adhesive, and the substrate is divided into ultra-thin electro-optical display devices.

  In addition, in an ultra-thin transflective LCD, a portion corresponding to a pixel opening of a display portion of an electro-optical display element substrate is removed by etching, and the removed portion is buried with a light transmitting material to flatten the surface. A transparent electrode was formed on a non-defective chip in an electro-optic display element substrate on which an alignment film was formed and alignment processing was performed by forming a pixel electrode in two regions of reflection and transmission connected to the pixel display element. After the non-defective chips of the counter substrate are overlapped and sealed via a predetermined liquid crystal gap, the liquid crystal is injected and sealed, and after separating the support substrate, at least the light transmitting material in the pixel opening of the display unit is exposed. By attaching a non-defective chip of a transparent support to a non-defective chip in the ultra-thin electro-optical display device substrate after separation with a transparent adhesive, and dividing the ultra-thin electro-optical display device into respective ultra-thin electro-optical display devices. It is.

  In addition, an ultra-thin transflective LCD is formed by forming a pixel electrode in two regions of reflection and transmission connected to a pixel display element, forming an alignment film, and performing an alignment process on a non-defective chip in an electro-optical display element substrate. The non-defective chips of the counter substrate on which the electrodes are formed, the alignment film is formed, and the alignment process is performed, are overlapped and sealed via a predetermined liquid crystal gap, and then the liquid crystal is injected and sealed. After the support substrate is separated, the support substrate is separated. It is obtained by attaching a transparent support to the ultra-thin electro-optical display element substrate with a transparent adhesive and dividing the substrate into ultra-thin electro-optical devices.

  In addition, an ultra-thin transflective LCD is formed by forming a pixel electrode in two regions of reflection and transmission connected to a pixel display element, forming an alignment film, and performing an alignment process on a non-defective chip in an electro-optical display element substrate. The non-defective chips of the counter substrate on which the electrodes are formed, the alignment film is formed, and the alignment process is performed, are overlapped and sealed via a predetermined liquid crystal gap, and then the liquid crystal is injected and sealed. After the support substrate is separated, the support substrate is separated. It is obtained by attaching a good chip of a transparent support to a good chip in an ultra-thin electro-optical display element substrate with a transparent adhesive, and dividing into each ultra-thin electro-optical display device.

  In addition, an ultra-thin transflective LCD has a structure in which a transparent support is attached to a separated ultra-thin electro-optical display element substrate with a transparent adhesive, and then a pixel opening of a display section of the electro-optical display element substrate is formed. The portion corresponding to is removed by etching, the removed portion is buried with a light transmissive material, the surface is flattened, and a pixel electrode for reflection and transmission connected to the pixel display element is formed there to form an alignment film. A transparent electrode is formed on an oriented electro-optical display element substrate, and an opposing substrate on which an oriented film is formed and oriented is overlapped and sealed via a predetermined liquid crystal gap, and divided into ultra-thin electro-optical display devices. It is obtained by injecting and sealing the liquid crystal later. As a result, an ultra-thin transflective LCD having a low light transmittance and having a pixel opening of a display portion of an ultra-thin electro-optical display element substrate formed of a light-transmissive material that is difficult to sufficiently transmit light can be obtained.

  In addition, an ultra-thin transflective LCD has a structure in which a transparent support is attached to a separated ultra-thin electro-optical display element substrate with a transparent adhesive, and then a pixel opening of a display section of the electro-optical display element substrate is formed. The portion corresponding to is removed by etching, the removed portion is buried with a light transmissive material, the surface is flattened, and a pixel electrode for reflection and transmission connected to the pixel display element is formed there to form an alignment film. On the non-defective chip in the electro-optical display element substrate subjected to the alignment treatment, the non-defective chip of the opposite substrate cut by performing the transparent electrode formation and the alignment film formation and the alignment treatment is overlapped and sealed via a predetermined liquid crystal gap, It is obtained by dividing into each ultra-thin electro-optical display device after liquid crystal injection sealing.

  In addition, an ultra-thin transflective LCD has a structure in which a transparent support is attached to a separated ultra-thin electro-optical display element substrate with a transparent adhesive, and then a pixel opening of a display section of the electro-optical display element substrate is formed. The portion corresponding to is removed by etching, the removed portion is buried with a light transmissive material, the surface is flattened, and a pixel electrode for reflection and transmission connected to the pixel display element is formed there to form an alignment film. On the non-defective chip in the electro-optical display element substrate subjected to the alignment treatment, the non-defective chip of the opposite substrate cut by performing the transparent electrode formation and the alignment film formation and the alignment treatment is overlapped and sealed via a predetermined liquid crystal gap, It is obtained by dividing and filling each liquid crystal display device with an ultra-thin electro-optical display device.

  Alternatively, in the case of an ultra-thin transflective LCD, a transparent support is attached to a separated ultra-thin electro-optical display substrate with a transparent adhesive, and then a pixel opening of a display section of the electro-optical display substrate is formed. The portion corresponding to is removed by etching, the removed portion is buried with a light transmissive material, the surface is flattened, and a pixel electrode for reflection and transmission connected to the pixel display element is formed there to form an alignment film. A transparent electrode is formed on the non-defective chip of the electro-optical display element substrate that has been cut by performing the alignment process, and the non-defective chip of the opposite substrate that has been cut by performing the alignment process and the alignment process is overlapped with a predetermined liquid crystal gap and sealed. Then, it is obtained by injecting and sealing liquid crystal.

  In the method of manufacturing an electro-optical display device according to the present invention, a cathode, an organic EL light-emitting layer, and an anode are formed on a pixel display element of a display portion of an electro-optical display element substrate of a single crystal semiconductor layer, and sealed with a moisture-resistant transparent resin. Then, the support substrate is separated, and the support is attached to the separated ultra-thin electro-optical display element substrate with an adhesive, and divided into each ultra-thin electro-optical display device, thereby forming an ultra-thin electro-optical display. An ultra-thin top-emitting organic EL as an apparatus can be obtained.

  Alternatively, an ultra-thin top-emitting organic EL is formed by forming a cathode, an organic EL light-emitting layer, and an anode on a pixel display element of a display portion of an electro-optical display element substrate of a single crystal semiconductor layer, and sealing with a moisture-resistant transparent resin. After that, the support substrate is separated, and a non-defective chip in the ultra-thin electro-optical display element substrate after separation is attached with a non-defective support chip with an adhesive, and divided into each ultra-thin electro-optical display device. can get.

  Further, in the method for manufacturing an ultra-thin electro-optical display device of the present invention, after the support is attached to the ultra-thin electro-optical display device substrate after separation with an adhesive, the display portion of the electro-optical display device substrate is removed. By forming a cathode, an organic EL light emitting layer, and an anode on a pixel display element, sealing with a moisture-resistant transparent resin, and dividing into each ultra-thin electro-optical display device, an ultra-thin top-emitting organic EL is obtained. Can be

  On the other hand, the ultra-thin bottom emission organic EL as the ultra-thin electro-optical display device corresponds to the pixel opening of the display portion of the electro-optical display element substrate in the method of manufacturing an electro-optical display device of the present invention. The portion was removed by etching, the removed portion was buried with a light transmitting material, the surface was flattened, and an anode, an organic EL light emitting layer, and a cathode connected to the pixel display element were formed thereon, and sealed with a moisture resistant resin. After separating the support substrate, at least expose the light transmissive material of the pixel opening of the display unit, a transparent support is attached to the ultra-thin electro-optical display element substrate after the separation with a transparent adhesive, Obtained by dividing into an ultra-thin electro-optical display device. Thereby, an ultra-thin bottom-emitting organic EL in which the pixel openings of the display section of the ultra-thin electro-optical display element substrate having a low light transmittance and hardly sufficiently transmitting light are formed of a light-transmitting material can be obtained. .

  Alternatively, in the ultra-thin bottom emission organic EL, a portion corresponding to a pixel opening of a display portion of an electro-optic display element substrate is removed by etching, and the removed portion is buried with a light transmitting material to flatten the surface. An anode, an organic EL light-emitting layer, and a cathode connected to a pixel display element are formed thereon, and the support substrate is separated after sealing with a moisture-resistant resin. It is obtained by exposing, bonding a good chip of a transparent support with a transparent adhesive to a good chip in the ultra-thin electro-optical display element substrate after this separation, and dividing it into each ultra-thin electro-optical display device. .

  The bottom emission type organic EL may be obtained by attaching a transparent support to a separated ultra-thin electro-optical display element substrate with a transparent adhesive in the above-described method of manufacturing an ultra-thin electro-optical display device of the present invention. Then, a portion corresponding to the pixel opening of the display portion of the electro-optic display element substrate is removed by etching, the removed portion is buried with a light-transmitting material, the surface is flattened, and an anode connected to the pixel display element and an organic It is obtained by forming an EL light-emitting layer and a cathode, sealing with an moisture-resistant resin, and then dividing into each ultra-thin electro-optical display device. Thereby, an ultra-thin bottom-emitting organic EL in which the pixel openings of the display section of the ultra-thin electro-optical display element substrate having a low light transmittance and hardly sufficiently transmitting light are formed of a light-transmitting material can be obtained. .

Here, the liquid crystal side of the area corresponding to the peripheral area of the pixel opening in the display area of the ultra-thin electro-optical display element substrate and the entire peripheral circuit area of the ultra-thin electro-optical display element substrate is placed on the liquid crystal side. It is desirable to form a reflective film. Thus, strong incident light can be reflected on the opposing substrate in a region other than the pixel opening, and unnecessary panel temperature rise can be prevented.
In addition, a black low-reflection coating is formed on the surface of the transparent support substrate, corresponding to the peripheral area of the pixel opening in the display area of the ultra-thin electro-optical display element substrate and the entire peripheral circuit area of the ultra-thin electro-optical display element substrate. It is preferable to form a film. Thereby, light incidence from the back surface can be prevented.

In ultra-thin reflective LCDs and top-emission organic EL devices, integration is achieved by forming part of peripheral circuits including memory circuits other than display circuits in the single crystal semiconductor layer under the reflective electrodes in the pixel display area. A high-definition, high-performance, high-quality and inexpensive ultra-thin electro-optical display device is realized with a high degree of accuracy.
In addition, by forming a peripheral circuit having a multilayer wiring structure or a display circuit and a peripheral circuit on a single-crystal semiconductor layer, an integration degree is increased to realize a high-definition, high-performance, high-quality, inexpensive ultra-thin electro-optical display device. I do.
Further, by forming a peripheral circuit also in the single crystal semiconductor layer in the seal region, the number of wafers per wafer is increased due to shrinkage of the LCD panel size, thereby realizing cost reduction.

By the way, for example, unlike a lattice constant of a single crystal Si layer, a silicon germanium (hereinafter referred to as SiGe) layer of a strain applying semiconductor for applying a strain to the single crystal Si layer is formed on a porous Si layer, and then a semiconductor epitaxial growth is performed. Forming a strained channel single crystal Si layer using a strained semiconductor SiGe layer as a seed, or forming a strained semiconductor SiGe layer on a single crystal Si substrate by semiconductor epitaxial growth, and then applying strained semiconductor SiGe by semiconductor epitaxial growth. A single crystal Si layer of a strain channel layer is formed using the layer as a seed, or a SiGe layer of a strain applying semiconductor is formed on the insulating layer, and a single crystal Si layer of a strain channel layer is formed using the SiGe layer of the strain applying semiconductor as a seed. When strain is applied to the strained channel semiconductor layer, As a result, the electron structure is changed, and as a result, the electron scattering is suppressed and the electron mobility can be increased. Therefore, it is about 1.76 times as large as that of the conventional single-crystal Si layer of the strain-free channel layer. A high-performance, high-definition, high-quality ultra-thin electro-optical display device consisting of a MOSTFT display unit and peripheral circuits with high electron and hole mobilities and high driving capability is realized. Become.
At this time, the germanium concentration in the strain applying semiconductor layer gradually increases from the contact surface of the porous Si layer, from the contact surface of the single crystal Si substrate, or from the contact surface of the insulating layer to increase the When the gradient composition is such that a desired concentration, for example, a Ge concentration of 20 to 30% is obtained on the surface of the SiGe layer, a desired and significantly high electron mobility is realized.

  In the method of manufacturing an ultra-thin electro-optical display device according to the present invention, it is preferable that the separation be performed while holding the sheet with an ultraviolet irradiation-curable tape, particularly an antistatic ultraviolet irradiation-curable tape having no adhesive residue. Since the ultraviolet irradiation curing type tape has a strong adhesive force, separation can be performed in a state where the ultraviolet irradiation curing type tape is firmly held and its surface is protected. Further, the ultraviolet irradiation curing type tape is weakened in adhesive strength by irradiation with ultraviolet light and is easily peeled off, so that it can be easily removed without separation after separation. Furthermore, since the tape is an antistatic ultraviolet irradiation-curable tape, it is possible to prevent the semiconductor device formed in the electro-optical display element substrate from being damaged by static electricity at the time of separation or separation. For separation, a tape of an antistatic, heat-expandable, peelable pressure-sensitive adhesive having no adhesive residue may be used depending on the application.

  In the second method for manufacturing an ultra-thin electro-optical display device according to the present invention, it is preferable that the porous semiconductor layer formed on the seed substrate has a higher porosity than the porous semiconductor layer formed on the support substrate. . Further, in the second method for manufacturing an ultra-thin electro-optical display device according to the present invention, it is preferable that the porous semiconductor layer formed on the seed substrate be thicker than the porous semiconductor layer formed on the support substrate. Thereby, the porosity and the thickness of the porous semiconductor layers of the seed substrate and the support substrate can be reduced, and during the process of forming the display element and the peripheral circuit, the thermal expansion of the porous semiconductor layer formed on the support substrate by the single-crystal semiconductor layer is performed. Adverse effects such as warpage distortion can be prevented.

In the second, fourth, and fifth manufacturing methods of the ultra-thin electro-optical display device according to the present invention, it is preferable that the periphery of the surface of the supporting substrate including the ultra-thin SOI layer after the separation of the seed substrate is C-chamfered. . Accordingly, not only in the double porous semiconductor layer separation method, but also in the double ion implantation layer separation method and the porous / ion implantation layer separation method, the surface of the support substrate including the ultra-thin SOI layer after the seed substrate is separated By chamfering the peripheral portion of the substrate, chipping, cracking and cracking of the ultra-thin SOI layer and the like at the peripheral portion can be prevented.
The angle and width of the C chamfer can be set arbitrarily, and it is preferable to use a grindstone, diamond wheel, laser or the like. Further, if necessary, light etching may be performed with a hydrofluoric acid-based etchant to remove Si dust and micro cracks.

  Further, in the second method for manufacturing an ultra-thin electro-optical display device according to the present invention, the diameter of the seed substrate on which the single-crystal semiconductor layer is formed via the porous semiconductor layer may be changed by using the single-crystal semiconductor layer via the porous semiconductor layer. And bonding the support substrate with the insulating layer formed thereon to a diameter larger or smaller than the diameter of the support substrate, and then applying high-pressure fluid jet injection or laser water jet injection to the porous semiconductor layer of the seed substrate from the sideways or oblique direction to the seed substrate. It is more preferable that the periphery of the surface of the supporting substrate including the ultra-thin SOI layer after the separation of the seed substrate be chamfered. Thereby, the high pressure fluid jet injection or the laser water jet injection is applied to the porous semiconductor layer of the seed substrate from the sideways or oblique direction to separate the seed substrate, and at the same time, the high pressure fluid jet to the porous semiconductor layer of the support substrate is separated. Since the impact force of the injection is reduced, the support substrate does not separate from the porous semiconductor layer of the support substrate.

  Incidentally, the insulating layer constituting the SOI structure is at least a silicon oxide film, a silicon oxynitride film, a stacked film of silicon oxide and silicon nitride, a silicon nitride film, and a stacked film of silicon oxide, silicon nitride, and silicon oxide in this order. , And at least one of aluminum oxide films, and particularly preferably a nitride silicon film. Thus, during the process of forming the display element and the peripheral circuit in the single crystal semiconductor layer, it is possible to prevent penetration of an element having characteristic deterioration, for example, a halogen element, from the support substrate side into the single crystal semiconductor layer. In addition, during the process of forming the display element and the peripheral circuit, it is possible to prevent the single crystal semiconductor layer from being adversely affected by the thermal expansion of the porous semiconductor layer formed on the supporting substrate, for example, from being warped.

  Further, the nitride silicon film acts as an etching stopper when etching the single crystal semiconductor layer and the porous semiconductor layer under the insulating layer of the separated SOI structure, so that the ultra-thin SOI structure without etching unevenness is obtained. A thin electro-optic display element substrate is obtained.

  The apparatus for manufacturing an ultra-thin electro-optical display device according to the present invention is characterized in that an ultra-thin electro-optical display device is separated by applying a laser water jet, which is a combination of a laser beam and a water jet, radiated from an output portion to a separating layer of a rotating substrate. An optical display device is obtained.

  According to this manufacturing equipment, a water jet of any diameter is totally reflected and guided in parallel by using the fact that laser light is completely reflected at the boundary surface between water and air. This is thermal processing or ablation processing due to light absorption, and enables accurate separation from the target separation layer.

  An apparatus for manufacturing an ultra-thin electro-optical display device according to the present invention obtains an ultra-thin electro-optical display device by applying a laser beam irradiated from an output section to a separation layer of a rotating substrate to separate the substrate.

  According to this manufacturing apparatus, a laser beam having an arbitrary diameter can be irradiated to the separation layer with high precision. Therefore, thermal processing and ablation processing by absorption of laser light, and multiphoton absorption modification processing of laser light, etc. Accurate separation from the layers is possible. At this time, the laser processing may be performed while cooling the substrate by a fluid cooling system via a holding unit such as an ultraviolet irradiation curing type tape as needed.

  The apparatus for manufacturing an ultra-thin electro-optical display device according to the present invention includes a high-pressure fluid jet jet or a laser water jet jet controlled on a separation layer of a rotating substrate by a fine nozzle diameter of an output portion and a width of a slit hole of a guard ring stopper. To obtain an ultra-thin electro-optical display device.

  According to this manufacturing apparatus, since a high-pressure fluid jet or a laser water jet having an arbitrary diameter can be jetted to the separation layer with high accuracy, it is possible to accurately separate from the target separation layer.

  According to the present invention, the following effects can be obtained.

(1) In the porous semiconductor layer separation method of the present invention, a porous semiconductor layer and a single crystal semiconductor layer are formed on a support substrate made of a single crystal semiconductor, and a display portion and peripheral circuits are formed on the single crystal semiconductor layer. By separating the single-crystal semiconductor layer from the supporting substrate in the porous semiconductor layer, bonding the support to the ultra-thin electro-optical display element substrate after the separation, and dividing the substrate into each ultra-thin electro-optical display device -Brightness, high-definition, and high-performance transmissive LCD, reflective LCD, semi-transmissive LCD, and top emission using an electro-optical display element made of an ultra-thin single-crystal semiconductor with high electron and hole mobilities Ultra-thin electro-optical display devices such as organic EL devices and bottom-emitting organic EL devices can be manufactured with good yield, high productivity, and low cost.

(2) In the ion-implanted layer separation method of the present invention, a display portion and peripheral circuits are formed on a support substrate made of a single crystal semiconductor, an ion-implanted layer is formed on the support substrate, an annealing process for separation is performed, After separating from the distorted part of the ion-implanted layer, attaching the support to the ultra-thin electro-optical display element substrate after separation, and dividing into each ultra-thin electro-optical display device, high electrons and holes are obtained. High-brightness, high-definition and high-performance transmissive LCD, reflective LCD, semi-transmissive LCD, top-emitting organic EL, bottom-emitting using electro-optical display elements made of ultra-thin single crystal semiconductor with mobility An ultra-thin electro-optical display device such as an organic EL device can be manufactured with good yield, high productivity, and low cost.

(3) In the double porous semiconductor layer separation method or the porous semiconductor layer / ion implantation layer separation method of the present invention, an ultra-thin SOI layer is formed on a support substrate made of a single crystal semiconductor, and this ultra-thin SOI layer is formed. After forming a display portion and a peripheral circuit in the single-crystal semiconductor layer, the ultra-thin SOI layer including the single-crystal semiconductor layer is separated from the supporting substrate in the porous semiconductor layer, and the ultra-thin SOI structure after the separation is formed. By attaching a support to the electro-optical display element substrate of (1) and dividing the substrate into ultra-thin electro-optical display devices, an ultra-thin SOI layer structure composed of a single crystal semiconductor layer having high electron and hole mobilities is obtained. Ultra-thin electro-optical display devices such as transmissive LCDs, reflective LCDs, transflective LCDs, top-emitting OLEDs, and bottom-emitting OLEDs using electro-optic display elements with high brightness, high definition and high functionality Good yield, high productivity and low cost Can be manufactured.

(4) In the double ion implantation layer separation method of the present invention, an ultra-thin SOI layer is formed on a support substrate made of a single crystal semiconductor, and a display portion and peripheral circuits are formed on the single crystal semiconductor layer of the ultra-thin SOI layer. Is formed on the supporting substrate, and an ultra-thin SOI layer including a single crystal semiconductor layer is separated from the supporting substrate at a strained portion of the ion-implanted layer after the annealing treatment for peeling off. By bonding a support to an electro-optical display element substrate having a thin SOI structure and dividing the substrate into ultra-thin electro-optical display devices, an ultra-thin single-crystal semiconductor layer having high electron and hole mobilities is obtained. Ultra-thin electricity such as high-brightness, high-definition, and high-performance transmissive LCD, reflective LCD, transflective LCD, top-emitting organic EL, and bottom-emitting organic EL using an electro-optic display element with an SOI layer structure Optical display device with good yield, It can be manufactured with high productivity at low cost.

(5) A part of a peripheral circuit including a memory circuit as well as a display part is formed in a single crystal semiconductor layer below a reflective electrode in a pixel display part, or a peripheral circuit is formed in a single crystal semiconductor layer in a seal region. By forming a peripheral circuit or a display section and a peripheral circuit having a multilayer wiring structure on the crystal semiconductor layer, the degree of integration of peripheral circuits in the LCD panel is increased, and by incorporating external peripheral IC functions, higher functions and cost reduction are achieved. Realize.

(6) Unlike the lattice constant of the single crystal Si layer, for example, after forming the SiGe layer of the strain applying semiconductor for applying strain to the single crystal Si layer on the porous Si layer, the SiGe layer of the strain applying semiconductor is formed by semiconductor epitaxial growth. Forming a strained channel single-crystal Si layer as a seed, or forming a strained semiconductor SiGe layer on a single-crystal Si substrate by semiconductor epitaxial growth, and then using the strained semiconductor SiGe layer as a seed by semiconductor epitaxial growth as a seed. A strained channel semiconductor layer by forming a strained semiconductor SiGe layer on an insulating layer, and forming a strained channel single crystal Si layer using the strained semiconductor SiGe layer as a seed. When the strain is applied to the band, the band structure changes, and as a result, the Since the scattering is suppressed and the electron mobility can be further increased, the electron mobility is improved by about 1.76 times compared to the single crystal semiconductor layer of the conventional strain-free channel layer. Since the display portion and the peripheral circuit of the MOSTFT having high hole mobility and high driving capability are realized, an ultra-thin electro-optical display device with high performance, high definition and high quality is realized.
At this time, the germanium concentration in the strain-applying semiconductor layer gradually increases from the contact surface of the porous Si layer, from the contact surface of the single-crystal Si substrate, or from the contact surface of the insulating layer, and increases. By setting the gradient composition to a desired concentration, for example, 20 to 30%, a desired and significant improvement in electron mobility is realized.

(7) Since the separated seed substrate and support substrate can be reused, the cost can be reduced.

(8) In the double porous semiconductor layer separation method, the thickness of the single crystal semiconductor layer formed on the seed substrate is set to be equal to or less than the thickness of the single crystal semiconductor layer formed on the support substrate, so that the porous structure during the device process is reduced. The expansion and the like of the high-quality semiconductor layer due to oxidation can reduce or prevent distortion of the single-crystal semiconductor layer for device fabrication, and improve the yield and quality.

(9) By separating the supporting substrate while holding the opposing substrate and the supporting substrate with an antistatic UV tape having no adhesive residue, the opposing substrate and the supporting substrate are strongly held. Since the surface is separated while protecting the surface, and attached to the support, and then divided into each ultra-thin electro-optical display device, the occurrence of cracks, chips, and cracks at the time of division can be further prevented. In addition, at this time, since the UV tape has an antistatic function, it is possible to prevent occurrence of characteristic failure due to electrostatic damage of the display unit and peripheral circuits on the support substrate. Further, after separation, the UV tape can be easily removed without adhesive residue by UV irradiation curing, so that quality and productivity can be further improved.
Furthermore, it acts as a protective layer even when an unnecessary porous Si layer or the like is etched, thereby preventing chipping, cracking, cracking, and the like in the peripheral portion of the ultra-thin electro-optical display element substrate.

(10) In each manufacturing method, the support substrate is separated from the single crystal semiconductor layer to at least the porous semiconductor layer or the ion-implanted layer along the dividing line in the dividing region when dividing into the ultra-thin electro-optical display devices. By performing the process after forming the groove up to the strained portion, the ultra-thin single crystal semiconductor layer or the electro-optical display element substrate layer having the ultra-thin SOI layer structure separated from the supporting substrate is divided in advance, so that high-pressure fluid jet injection is performed. Separation of the supporting substrate by a separation method, a laser processing separation method, a laser water jet processing separation method, or the like is facilitated. As a result, the occurrence of cracks, chips, and cracks at the time of division into each ultra-thin electro-optical display device can be prevented, and the yield, quality, and cost can be reduced.
In particular, when grooves are formed, the inside is filled with an ultraviolet irradiation curable adhesive, preventing chipping, cracking, cracking, etc. around the ultra-thin electro-optical display element substrate due to stress at the time of separation from the separation layer. You can do it.

(11) In the double-porous semiconductor layer separation method, the diameter of the seed substrate on which the single-crystal semiconductor layer is formed via the porous semiconductor layer is set to the diameter of the support substrate on which the single-crystal semiconductor layer is formed via the porous semiconductor layer. By slightly reducing or increasing the diameter, the high-pressure fluid jet jet is caused to collide with the porous semiconductor layer of the seed substrate from the sideways or oblique direction to separate the seed substrate, but the porous semiconductor layer of the support substrate is separated. Is not directly hit by the high-pressure fluid jet, so that the support substrate does not separate.
Thereby, the porosity and thickness of the porous semiconductor layer of the supporting substrate can be reduced, and during the formation process of the display portion and the peripheral circuit, the single crystal semiconductor layer has an adverse effect of the thermal expansion of the porous semiconductor layer formed on the supporting substrate. Warpage distortion can be prevented.

(12) In the double porous semiconductor layer separation method, the double ion implantation layer separation method, and the porous semiconductor layer / ion implantation layer separation method, after separating the seed substrate, the peripheral portion of the surface of the support substrate including the ultra-thin SOI layer Chamfering prevents chipping, cracking, and cracking of the ultra-thin SOI layer and the like, thereby improving yield and quality and reducing costs.

(13) In the separation from the porous semiconductor layer or the ion-implanted layer, the high pressure of the gas, the liquid, or the mixture of the gas and the liquid is applied to the rotating porous semiconductor layer or the strained portion of the ion-implanted layer after the release annealing. High-precision separation can be efficiently performed by spraying a fluid jet or performing laser processing or laser water jet processing on the porous semiconductor layer or the ion-implanted layer.

(14) By including the nitride-based Si film in the insulating layer, the nitride-based Si film functions as an etching stopper at the time of etching after peeling after separation of the support substrate, so that uneven etching can be prevented. During assembling of the LCD or during the semiconductor device process, it is possible to prevent penetration of an element having a characteristic deterioration, for example, a halogen element, from the support substrate side into the single crystal semiconductor layer. Further, during the semiconductor device process, warpage and distortion due to the expansion of the porous semiconductor layer formed on the support substrate of the single crystal semiconductor layer can be reduced or prevented, so that the yield and quality are improved.

(15) After removing the single crystal semiconductor layer in the pixel opening in the display area of the ultra-thin electro-optical display element substrate, an insulating film and a light-shielding metal film are formed in this order, and then a light-transmitting material is embedded and the surface is flattened. The image quality is improved because the light shielding effect of the light-shielding metal film, especially in the case of a black metal film, due to its low reflectivity, can prevent leak current due to light leaking to the display element due to strong incident light. Can be done.
At this time, by setting the light-shielding metal film on the inner wall of each pixel opening to the ground potential, charge-up of each part due to strong incident light can be prevented, so that the leak current of the display element is further prevented, and high brightness and high definition are achieved. In addition, a transmission type LCD for a projector using a high-performance ultra-thin electro-optical display element substrate can be realized.

(16) A transparent material such as transparent resin, glass, or SiO ₂ having high transmittance and ultraviolet light resistance is embedded in the pixel opening of the single crystal semiconductor layer in the display region of the ultra-thin electro-optical display element substrate. In addition, a transmissive LCD for a projector using an ultra-thin electro-optical display element substrate having high light transmittance and high light resistance to ultraviolet light can be realized.

(17) High thermal conductivity glass having a thermal conductivity of 1 (W / m · K) or more satisfying the optical characteristics of the separated ultra-thin electro-optical display element substrate, for example, quartz glass, transparent crystallized glass (Neoceram, Clearceram) , Zerodur, etc.), and even higher heat conductive glasses such as highly translucent ceramic polycrystals, electrofused MgO of oxide crystals, sintered MgO, Y ₂ O ₃ , Gd ₂ O ₃ , CaO (calcia), AL ₂ O ₃ (sapphire), BeO (beryllia), ZrO ₂ , PbO, TiO ₂ , polycrystalline sapphire, or a double oxide crystal YAG (Yttrium Aluminum Garnet), MgAl ₂ O ₄ (spinel), LiNbO ₃ , BaTiO _{3, Bi 12 GeO 20, SrTiO} 2, 3Al 2 O 3 · 2SiO 2, Al 2 O 3 · SiO 2, CaCO 2, ZrSiO 4, ( b, La) (Zr, Ti), etc. _{O 3}, CaF} 2 ((calcium fluoride), CVD diamond film coated high light-ceramic polycrystalline body and the transparent crystallized glass, a transparent substrate such as quartz Is bonded with a light-resistant transparent adhesive to provide a high heat dissipation effect for strong incident light, achieve high brightness, high definition, and long life, and improve the quality and reliability of the projector. Transmission type LCD can be realized.
The high thermal conductive glass is also used for the counter substrate, the dust-proof glass having a low-reflection film on the incident side, and the dust-proof glass having a low-reflection film on the emission side. Opposite substrate of sapphire dustproof glass and single crystal sapphire, liquid crystal layer, ultra-thin electro-optical display device substrate, support substrate of single crystal sapphire and single crystal sapphire dustproof glass with low reflection film formed By bonding with an agent, a higher heat dissipation effect can be expected.

(18) In the case of a reflection type LCD for a projector, a high thermal conductivity of 1 (W / m · K) or more that satisfies the same optical characteristics as the above as a counter substrate material and a dust-proof glass material having a low reflection film formed on the incident side. Conductive glass such as quartz glass, transparent crystallized glass (Neoceram, Clearceram, Zerodur, etc.), and higher heat conductive glass such as highly transmissive ceramic polycrystals ｛Electro-fused MgO of oxide crystals (cubic, etc.) Axial hexagonal), sintered MgO (cubic), Y ₂ O ₃ , Gd ₂ O ₃ , CaO (calcia), AL ₂ O ₃ (hexagonal sapphire), BeO (beryllia), ZrO ₂ , polycrystalline sapphire, PbO, etc. TiO _2, or YAG double oxide crystal _{(Yttrium Aluminum Garnet), MgAl 2} O 4 ( _{spinel; 71.8Al 2 O 3, 28.2MgO)} , LiNbO 3, B _{TiO 3, Bi 12 GeO 20,} SrTiO 2, 3Al 2 O 3 · 2SiO 2, Al 2 O 3 · SiO 2, CaCO 2, ZrSiO 4, (Pb, La) (Zr, Ti) O 3 , etc.}, CaF ₂ ((Calcium fluoride), a transparent substrate made of a highly transmissive ceramic polycrystal coated with a vapor-phase synthetic diamond film and a transparent crystallized glass, quartz, etc. On the other hand, a high heat dissipation effect is exhibited to achieve high brightness, high definition, and long life, and quality and reliability can be improved, for example, a YAG without a birefringence formed with a low reflection film from the entrance side. Alternatively, the structure of a dust-proof glass of spinel, a counter substrate of YAG or spinel, a liquid crystal layer, an ultra-thin electro-optical display element substrate, and a metal support substrate, and a YAG or spine having a low reflection film is formed. It is high by bonding the dust-proof glass of the flannel and the opposing substrate of YAG or spinel with a light-resistant transparent adhesive, and bonding the ultra-thin electro-optic display element substrate and the metal support substrate with a high thermal conductivity and a conductive adhesive. A heat dissipation effect can be expected.

(19) A transparent support substrate with a microlens array formed as a field lens is mounted on an ultra-thin electro-optical display element substrate with a high-precision film thickness on which an opposing substrate with a microlens array formed as a condenser lens is superimposed. The dual micro-lens structure to be bonded is capable of condensing light with a double micro-lens function that is more accurate than the conventional dual micro-lens structure, increasing the efficiency of light source light, and increasing the effective aperture ratio of pixels to the highest level. As a result, a transmission type LCD for a projector using an ultra-thin electro-optical display element substrate with higher luminance, higher definition and longer life can be realized.

(20) An ultra-thin electro-optical display element substrate having a high-precision film thickness formed by superposing a counter substrate having a reflective film formed around a micro-lens array functioning as a condenser lens, and a micro-lens array functioning as a field lens The dual micro-lens structure, in which a transparent support substrate with a low-reflection light-shielding film is attached, is condensed with a high-precision double micro-lens function to increase the efficiency of light source light and increase the effective aperture ratio of pixels to the highest level. In addition, since unnecessary incident light and reflected light are removed, a transmissive LCD for a projector using an ultra-thin electro-optical display element substrate having higher luminance, higher contrast, higher definition, and longer life can be realized.

(21) A wristwatch, a business card, and the like using the direct-view ultra-thin transmissive LCD, reflective LCD, transflective LCD, top-emitting organic EL, bottom-emitting organic EL, and the like obtained as described above. , Cards, glasses, stamps and head mounted type ultra-thin electro-optical display devices, and ultra-thin digital still cameras, ultra-thin digital movie cameras, ultra-thin camcorders, ultra-thin audio equipment (CD, MD) ), Ultra-thin, ultra-small, ultra-light electronic products such as ultra-thin mobile phones, ultra-thin mobile TVs, and ultra-thin TV monitors. Furthermore, a high-brightness, high-definition, high-performance, ultra-thin transmissive or reflective LCD makes it possible to realize an ultra-thin, ultra-compact, ultra-light projector LCD product for data / AV (Audio Visual).

(A) Porous Semiconductor Layer Separation Method In the present embodiment, a method of manufacturing an ultra-thin electro-optical display device by a porous semiconductor layer separation method using a porous silicon (hereinafter, referred to as “Si”) layer. explain. FIG. 1 to FIG. 17 are manufacturing process diagrams of an ultra-thin electro-optical display device by a porous Si layer separation method according to an embodiment of the present invention.

(1) A porous Si layer (a low-porous Si layer 11a, a high-porous Si layer 11b, and a low-porous Si layer 11c) is formed on a single-crystal Si substrate 10 as a supporting substrate by anodization (FIG. 1). reference).

[1] First, a monosilane gas and a diborane gas are applied to a p-type single-crystal Si (resistivity: 0.01 to 0.02 Ω · cm) substrate (hereinafter, referred to as “Si substrate”) 10 having a thickness of, for example, 12 inches φ and a thickness of 1.2 mm. the p-type impurity was added at a concentration of about boron 1 × 10 ¹⁹ atoms / cm ³ by the CVD method, a single crystal Si layer of a high concentration of the epitaxial growth of approximately 5μm thick (corresponding to a low porous layer Si layer 11a to be described later) To form

[2] A p-type impurity is added to the surface of the high concentration layer at a concentration of about 5 × 10 ¹⁴ atoms / cm ³ of boron by a CVD method using a monosilane gas or a diborane gas, and a low concentration epitaxially grown single crystal Si layer having a thickness of about 20 μm is formed. (Corresponding to a highly porous Si layer 11b described later).

[3] Further, a p-type impurity is added to the surface of the low-concentration layer at a concentration of about 5 × 10 ¹⁹ atoms / cm ³ by CVD using a monosilane gas or a diborane gas, and a single-crystal of a high-concentration epitaxial growth having a thickness of about 5 μm is added. An Si layer (corresponding to a low-porous Si layer 11c described later) is formed.

For forming a single-crystal Si layer by the CVD method, in addition to monosilane (SiH ₄ ) as a hydride material, disilane (Si ₂ H ₆ ), trisilane (Si ₃ H ₈ ), and tetrasilane (Si) as hydride materials are also used. ₄ H ₁₀₎ or dichlorosilane halide material (SiH ₂ C _l2), trichlorosilane (SiHCl _3), can be used a material gas such as silicon tetrachloride (SiCl _4). The method for forming the single crystal Si layer is not limited to the CVD method, but may be an MBE method, a sputtering method, or the like.

[4] Thereafter, a mixed solution obtained by mixing a 50% hydrogen fluoride solution and ethyl alcohol at a volume ratio of 2: 1 with the electrolytic solution at a current density of about 10 mA / cm ² , for example, by anodizing method. An electric current is applied for 10 minutes to form the low-porosity Si layers 11a and 11c having a low porosity in the high-concentration layer and the high-porosity Si layer 11b having a high porosity in the low-concentration layer.

  In addition, in the dissolution reaction of Si in the anodization method, since holes are necessary for the anodic reaction of Si in a hydrogen fluoride solution, it is desirable to use P-type Si which is easily made porous for the substrate. It is not limited.

  When the porous layer is formed by the anodization method, the porous layer can be composed of a plurality of layers having different porosity. For example, as described above, in addition to the three-layer structure in which the first low-porous Si layer 11a, the high-porous Si layer 11b, and the second low-porous Si layer 11c are sequentially formed on the single-crystal Si substrate 10. Alternatively, a two-layer structure in which a high-porous Si layer 11b and a low-porous Si layer 11c are sequentially formed on a single-crystal Si substrate 10 may be used.

  At this time, the porosity of the high porous Si layer 11b is in the range of 40 to 80%, and the porosity of the low porous Si layers 11a and 11c is in the range of 10 to 30%. The thickness of each of the plurality of layers having different porosity can be arbitrarily adjusted by changing the current density and time during anodization and the type or concentration of the formation solution during anodization.

  The supporting substrate is not limited to a single-crystal Si substrate formed by a CZ (Czochralski) method, an MCZ (Magnetic Field Applied Czochralski) method, an FZ (Floating Zone) method, or the like, as well as a single-crystal substrate having a hydrogen-annealed substrate surface. An Si substrate, an epitaxial single crystal Si substrate, or the like can be used. Needless to say, a single-crystal SiGe substrate, a single-crystal compound semiconductor substrate such as a SiC substrate, a GaAs substrate, or an InP substrate can be used instead of the single-crystal Si substrate.

(2) An epitaxially grown single crystal Si layer 12 is formed on the porous Si layer (low porous Si layer 11c) (see FIG. 2).

  [1] First, in a CVD epitaxial growth apparatus, pre-baking is performed at about 1000 to 1100 ° C. in a hydrogen atmosphere to seal holes on the surface of the low-porous Si layer 11c and flatten the surface. Hydrogen annealing is performed at an etching rate of 0.0013 nm / min at 1050 ° C. and 0.0022 nm / min at 1100 ° C.

  [2] Thereafter, the temperature is lowered to 1020 ° C., and CVD using a monosilane gas or the like as a source gas is performed to form an epitaxially grown single crystal Si layer 12 having a predetermined thickness, for example, a thickness of 5 to 10 μm.

For forming a single-crystal Si layer by the CVD method, in addition to monosilane (SiH ₄ ) as a hydride material, disilane (Si ₂ H ₆ ), trisilane (Si ₃ H ₈ ), and tetrasilane (Si) as hydride materials are also used. ₄ H ₁₀ ) or a raw material gas such as a halide raw material such as dichlorosilane (SiH ₂ Cl ₂ ), trichlorosilane (SiHCl ₃ ), or silicon tetrachloride (SiCl ₄ ) can be used. The method for forming the single crystal Si layer is not limited to the CVD method, but may be an MBE method, a sputtering method, or the like.

By the way, as one of means for increasing electron mobility, a technique of applying a strain to a channel semiconductor layer is known.
This is because, when strain is applied to the channel semiconductor layer, its band structure is changed, and as a result, degeneration is released and electron scattering is suppressed, so that electron mobility can be increased.
Specifically, a strain-applying semiconductor layer of a mixed crystal layer made of a material having a larger lattice constant than Si on a single crystal Si substrate, for example, a SiGe mixed crystal layer having a Ge concentration of 20 to 30% (hereinafter, referred to as a SiGe layer) ) Is formed, and a single-crystal Si layer as a channel semiconductor layer is formed on the SiGe layer, whereby a strained single-crystal Si layer (hereinafter, referred to as a strained channel layer) is formed due to a difference in lattice constant. . It is reported that the use of this strained channel layer can achieve a significant improvement in electron mobility of about 1.76 times compared to the case of using a non-strained channel layer. (J. Welser, J. L. Hoyt, S. Takagi, and J. F. Gibbons, IEDM94-373)

Therefore, for example, when a single-crystal Si layer 12 as a strain applying semiconductor layer, which is a SiGe layer having a Ge concentration of 20 to 30%, is formed and a single-crystal Si layer 13 as a strain channel layer is formed thereon, A MOSTFT display section and peripheral circuits that achieve a significant improvement in electron mobility of about 1.76 times compared to the single-crystal Si layer of the strained channel layer are realized. An electro-optical display device is realized.
If the Ge composition ratio is large, it is better. If the Ge composition ratio is much less than 0.2, a remarkable improvement in the mobility of the MOSTFT cannot be expected. If the Ge composition ratio exceeds 0.5, the SiGe layer surface unevenness increases and the film quality deteriorates. However, about 0.3 is preferable.
The Ge concentration is gradually increased in the single-crystal Si layer 12 as a strain applying semiconductor layer, which is a SiGe layer, to have a gradient composition having a desired concentration on the surface, for example, a Ge concentration of 20 to 30%. It is preferable to form a single crystal Si layer as a strain channel layer by Si epitaxial growth using the layer as a seed.

Examples of the method of forming the SiGe layer include an epitaxial growth method such as a CVD method and an MBE method, a liquid phase growth method such as an LPE (Liquid Phase Epitaxy) method, and a solid phase growth method of a polySiGe layer and an amorphous SiGe layer. However, any other crystal growth method that can control the Ge composition ratio may be used.
Examples of the Si raw material include hydride raw materials such as monosilane (SiH ₄ ), disilane (Si ₂ H ₆ ), trisilane (Si ₃ H ₈ ), and tetrasilane (Si ₄ H ₁₀ ), and halide raw materials such as dichlorosilane (SiH ₂ Cl). ₂ ), trichlorosilane (SiHCl ₃ ), silicon tetrachloride (SiCl ₄ ), and the like, and Ge materials such as germane (GeH ₄ ), germanium tetrachloride (GeCl ₄ ), and germanium tetrafluoride (GeF ₄ ) are suitable. .

  Instead of the SiGe layer as the strained semiconductor layer, a mixed crystal layer of Si and another element such as SiC or SiN, a Group 2-6 mixed crystal layer such as a ZnSe layer, or a 3-5 mixed crystal layer such as GaAs or InP. A mixed crystal layer made of materials having different lattice constants, such as a group mixed crystal layer, may be used.

(3) When manufacturing a reflective LCD (see FIGS. 3 to 6)
[1] A TFT or a wiring as a display element of an LCD, a semiconductor element such as a TFT, a diode, a resistor, a capacitor, a coil or a wiring as a peripheral circuit, and a TFT as a display element of an LCD are formed in an ultra-thin single-crystal Si layer 12 by a general-purpose technology. One or both of the semiconductor integrated circuits are formed to manufacture an ultra-thin electro-optical display element substrate layer. Since the single crystal Si layer 12 grown by epitaxial growth has high electron and hole mobilities similar to a single crystal Si substrate, not only a liquid crystal peripheral driving circuit but also a video signal processing circuit, an image quality correction circuit, a memory circuit, a CPU (Central Processing Unit) ) A circuit or a DSP (Digital Signal Processor) circuit may be incorporated. At the same time, external extraction electrodes such as solder bumps connected to the peripheral circuits of the ultra-thin electro-optical display element substrate layer are formed. After the LCD panel is formed, anisotropic conductive film bonding, ultrasonic bonding, soldering, etc. It is preferable to perform bonding with a flexible substrate and mounting on a PCB (Printed Circuit Board).
Illustration of TFTs, diodes, resistors, capacitors, coils, wirings, and the like is omitted.

  When a bump such as solder is formed on the external extraction electrode, the bump height is preferably equal to or less than the thickness of the counter substrate.

  At this time, by forming a peripheral circuit or a display portion and a peripheral circuit having a multi-layer wiring structure on the single crystal semiconductor layer, an ultra-thin electro-optical display device with high integration, high definition, high performance, high quality and low cost can be obtained. Realize.

  Furthermore, by forming peripheral circuits also in the single crystal semiconductor layer in the seal region, the number of wafers to be taken per wafer due to shrinkage of the LCD panel size increases, thereby realizing cost reduction.

  In addition, by forming not only a display portion but also a part of a peripheral circuit including a memory circuit on a single crystal semiconductor layer below a reflective electrode, the integration degree is increased to achieve high definition, high performance, high quality and ultra-thin ultra-thin. Type electro-optical display device is realized.

  [2] For each panel in the ultra-thin electro-optical display element substrate layer (single crystal Si layer 12), aluminum, aluminum-silicon alloy, aluminum-silver alloy, silver, etc. connected to the drain of the display TFT A reflective electrode 13a made of a high-reflectance white metal is formed on the pixel display unit. Then, an organic liquid crystal alignment film material such as polyimide is formed for at least one panel, liquid crystal alignment processing such as buffing (hereinafter referred to as “alignment processing”) is performed, and if necessary, IPA (isopropyl alcohol) or the like is used. The organic liquid crystal alignment film (hereinafter, referred to as “alignment film”) 13b is formed by performing the organic cleaning according to the above (see FIG. 3).

In the case of this reflection type LCD, a TN (Twisted Nematic) mode liquid crystal having a positive dielectric anisotropy is provided on an organic alignment film such as polyimide or polyamide which has been subjected to horizontal alignment (homogeneous alignment) treatment or inclined alignment treatment by baffling or the like. Negative dielectric anisotropy TN mode so-called VA (Vertical Alignment) mode liquid crystal, alignment of chromium complex is applied to organic alignment films such as polyimide and polyamide of vertical alignment (homeotropic alignment) treatment with addition of vertical alignment agent. A combination of VA mode liquid crystals is preferred for the film.
Alternatively, in particular, the alignment film 13b of the LCD for a projector is preferably a light-resistant inorganic alignment film formed by, for example, SiOx oblique deposition or directional sputtering, and is preferably used in combination with a VA mode liquid crystal.
When PDLC (polymer-dispersed liquid crystal) and GH (guest-host liquid crystal) are used for a reflective LCD, an alignment film and an alignment treatment are not required.

  In the case of a reflective LCD for direct viewing, the reflective electrode 13a is provided with an appropriate unevenness in order to provide an appropriate light scattering effect and improve the visibility of the display. In the case of a reflection type LCD, it is preferable to use a highly flat electrode shape.

In the case of a transflective LCD, in order to have two regions of reflection and transmission in one pixel, a part of the reflection electrode is patterned and a transparent electrode is formed there.
For example, a photosensitive resin film having an appropriate uneven shape is formed in a part of the pixel opening by a general-purpose lithography technique, and after reflowing by heating, a high-reflectance aluminum film connected to the drain of the display TFT is formed. By forming a reflective electrode having an appropriate uneven shape and forming a transparent electrode in a pixel opening including an aluminum film, a pixel electrode having two regions of reflection and transmission in one pixel is formed.

Alternatively, a transparent electrode such as ITO or IZO connected to the drain of the display TFT is formed in the pixel opening, and a photosensitive resin film having an appropriate uneven shape is formed on a part of the transparent electrode by a general-purpose lithography technique. After the reflow, a high-reflectance aluminum film connected to the transparent electrode is formed, and a reflective electrode having an appropriate uneven shape is formed, thereby forming a pixel electrode having two regions of reflection and transmission in one pixel. .
By controlling the transmission / reflection pixel area ratio, the transmission and reflection optical characteristics can be balanced.

It goes without saying that the transmissive display of this transflective LCD uses a backlight light source as in the transmissive LCD, and the reflective display uses sunlight like the reflective LCD.
For a transflective LCD, for a brighter display, the reflective pixel electrode is also covered over an opaque area such as a wiring or a TFT to increase the aperture ratio. It is necessary to devise measures such as increasing the aperture ratio.

In addition, in order to realize the appearance of paper white in the reflective LCD and the transflective LCD, a function of reducing the specular reflection component of the reflected light and diffusing and scattering the light, the inclination angle of the concavo-convex shape formed on the reflective electrode is set. It is necessary to optimize the angle distribution shape within a specific range.
In addition, if the irregularities are arranged regularly, rainbow-colored light interference occurs in the reflected image under sunlight, and the visibility decreases. Therefore, the irregularities are randomly arranged by applying an array represented by a Fibonacci sequence to the irregularity pattern. Need to be

Note that at this stage, at least the height of the single-crystal Si layer 12 is higher than the height of the single crystal Si layer 12 along the division line in the division region when dividing into one panel of each ultra-thin electro-optical display device, that is, the division boundary line in the scribe line. It is preferable to form the groove 60 up to the porous Si layer 11b (see FIG. 3). By forming the groove 60 in this manner, an ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12) described later is divided by scribe lines in advance, so that a single-crystal Si substrate as a support substrate is formed. Separation from step 10 can be easily performed, and the step [5] described later can be easily divided. The groove 60 is formed by dry etching (plasma etching with SF ₆ , CF ₄ , Cl + O ₂ , HBr + O ₂ , reverse sputter etching, etc.), wet etching (HF + H ₂ O ₂ + H ₂ O mixed solution, HF + HNO ₃₎ + Hydrofluoric acid-based etchant such as + CH ₃ COOH mixed solution, alkali-based etchant, etc.) and mechanical processing (cutting groove by blade dicing, diamond cutter, cemented carbide cutter, ultrasonic cutter, etc.) It is preferable to form from the single crystal Si layer 12 to at least the highly porous Si layer 11b with a width.

  [3] A sealing agent 15 and a common electrode agent (not shown) are applied to each chip in the ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12), and the counter substrate 14 having a diameter of, for example, 12 inches is applied. Are overlapped and sealed and fixed at a predetermined liquid crystal gap (see FIG. 4). A so-called plane liquid crystal assembly (a single crystal Si substrate 10 in a substrate state (plane) and an opposing substrate 14 also in a substrate state (plane)) is formed. Superposition). However, a liquid crystal injection port (not shown) is left open.

At this time, in order to establish electrical continuity between one chip in the ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12) and the counter substrate 14, at least two common pad portions in the one chip are provided. Apply a common agent mixed with gold-plated resin micropearl using a dispenser.
Similarly, a sealing agent 15 to which a fiber (gap agent) equivalent to a liquid crystal gap is added is applied to the sealing region for each chip in the ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12).
By the way, at this time, in the case of the direct view type, the liquid crystal gap may be secured by dispersing the micro spacers in the entire screen.
Further, an arbitrary number of projections (OCS; On Chip Spacer) corresponding to a liquid crystal gap may be formed around the pixel opening of the opposing substrate 14 or the electro-optical display element substrate layer (single-crystal Si layer 12).

  The opposing substrate 14 is made of a resin film having high transparency, heat resistance, and moisture resistance, or a thin transparent base material such as borosilicate glass, aluminosilicate glass, or microsheet glass. And a microlens array 14c, a transparent electrode 14a is formed on the entire surface, and an organic or inorganic alignment film 14b that has been subjected to an alignment process for at least one chip is formed.

Incidentally, the sealant and the common agent are a visible light irradiation-curable adhesive, a visible light irradiation-curable adhesive used in combination with heat curing, or an ultraviolet irradiation-curable adhesive, an ultraviolet irradiation-curable adhesive used in combination with heat-curing, and a thermosetting type. Any type of adhesive may be used, but it is preferable to use the same type in terms of characteristics and work surface.
Specific sealing agents and common agents include, for example, a modified acrylate oligomer that exhibits basic properties after curing with the main components of the sealing agent and the common agent, an acrylate monomer that adjusts the viscosity of the liquid, and a visible light curing or UV curing part. Epoxy resin that shows basic properties after curing with the main components of photoinitiator, sealant, and common agent, curing agent that cures epoxy resin, and filler that prevents moisture from entering from outside air in the sealant (silica sphere) ), And a fiber equivalent to a liquid crystal gap.

Furthermore, micropearls of gold-plated resin larger than the liquid crystal gap (for example, about 3 μm larger than the liquid crystal gap) are mixed into the common agent applied to the common pad portion in the TFT substrate chip, and the TFT substrate chip and the counter substrate are mixed. The micropearls are crushed by the pressure at the time of stacking the chips, and the crushed gold-plated resin electrically connects both transparent conductive films.
Also, if there is a liquid crystal alignment film such as polyimide in the seal area, the material and size of the micropearl are used so that the crushed gold-plated resin penetrates and electrically conducts both transparent conductive films. Need to be devised.

  Further, when an organic liquid crystal alignment film such as polyimide is formed on at least one of the sealing regions of the TFT substrate chip or the counter substrate chip by spin coating or the like, filler filling for preventing moisture from entering the sealant from the outside air is required. Importantly, it is necessary to optimize the filler filling rate depending on the LCD panel size. For example, a filler filling rate of about 10 to 30% is preferable for an LCD panel for a projector of about 1 inch size. It is preferable to determine in consideration of the above.

  Here, "at least one chip" is used for the electro-optical display element substrate layer (single-crystal Si layer 12) and the opposing substrate 14 when organic or inorganic alignment films 13b and 14b may be formed on the entire surface. Because there is. Also, in this specification, one chip of the electro-optical display element substrate layer (single-crystal Si layer 12) and one chip of the counter substrate 14 are overlapped to define one panel LCD.

  For the above-mentioned surface liquid crystal assembly, a non-defective chip of a counter substrate on which a transparent electrode 14a is formed and an alignment-treated organic or inorganic alignment film 14b is formed is formed into an ultra-thin electro-optical display element substrate layer (single-layer). A so-called plane single liquid crystal assembly (superposition of a single crystal Si substrate 10 in a substrate state (plane) and a counter substrate in a chip state (single)) is selectively superimposed on a good chip in the crystal Si layer 12). Is also good.

  In the planar liquid crystal assembly, an electro-optical display element substrate layer (single-crystal Si layer 12) containing a defective chip and an opposing substrate 14 containing a defective chip may be overlapped with each other. Could be. On the other hand, in the surface single liquid crystal assembly, a defective LCD panel is generated because a non-defective counter substrate chip is selectively overlapped with a non-defective chip in an ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12). Less and cost reduction.

  [4] The opposing substrate 14 and the single-crystal Si substrate 10 are covered with an ultraviolet irradiation curing type tape (hereinafter referred to as “UV tape”) 16 or the like, and a high pressure fluid jet spraying method such as a water jet, an air jet, or a water air jet is used. Then, the single-crystal Si substrate 10 as a support substrate is separated from the highly porous Si layer 11b by a laser processing separation method or a laser water jet processing separation method (see FIG. 5). The separated single crystal Si substrate 10 can be reused by performing surface re-polishing, etching, heat treatment in an atmosphere containing hydrogen, and the like, as necessary.

  Here, the UV tape 16 is made of a UV tape base material such as polyolefin or polyethylene terephthalate (PET) and an antistatic acrylic UV irradiation-curable adhesive having strong adhesive force and at least no adhesive residue. Since the UV-irradiation-curable adhesive has a strong adhesive force, the UV tape 16 firmly holds the opposing substrate 14 and the single-crystal Si substrate 10 of the supporting substrate and protects the surface thereof, and the single-crystal Si layer 11b is removed from the highly porous Si layer 11b. The Si substrate 10 can be separated.

  In particular, in assembling a plane single liquid crystal when a groove is formed, the inside of the groove is filled and held with a UV-curable adhesive, so the peripheral portion of the TFT substrate (ultra-thin electro-optical display element substrate) is chipped due to stress at the time of separation. , Cracks and cracks can be prevented.

Furthermore, it acts as a protective layer even when unnecessary monocrystalline Si layers and porous Si layers are etched, preventing chipping, cracking, cracking, etching unevenness, etc. around the TFT substrate (ultra-thin electro-optical display element substrate). You can do it. However, at this time, it is necessary to use a UV radiation curable adhesive and a tape substrate that can withstand the Si etching solution.
Further, since the adhesive strength of the UV-irradiation-curable adhesive is weakened by the irradiation of ultraviolet rays, the UV tape 16 can be easily removed without any adhesive residue after separation, so that chipping, cracking and cracking can be prevented.

In the case of assembling a plane single liquid crystal, it is preferable that the thickness of the adhesive of the UV tape is equal to or larger than the thickness of the counter substrate so that the gap is sufficiently filled.
Also, use a double-sided UV tape to prevent cracking, chipping, and cracking due to the bending of the substrate after separation, and bond the opposing substrate 14 to one surface and a rigid transparent sheet such as glass to the other surface. Is also good.

Furthermore, in the case of assembling the plane single liquid crystal, if necessary, a glass sheet, a metal sheet, or the like having rigidity may be bonded to at least the counter substrate 14 via wax.
This wax is preferably an organic adhesive or a water-soluble adhesive that can be removed with an alcohol-based solvent such as ethanol or IPA (isopropyl alcohol) in order to prevent adverse effects on the LCD sealing properties and the like due to the peeling and cleaning.

  Examples of the water-soluble adhesive include a hot-melt water-soluble solid wax (for example, Aqua Wax 20/50/80 (main component is fatty acid glyceride), Aqua Wax 553/531/442 / SE (main component is Nikka Seiko Co., Ltd.) Polyethylene glycol, vinylpyrrolidone copolymer, glycerin polyether), PEG wax 20 (main component is polyethylene glycol) or the like, or water-soluble liquid wax (for example, Aqua Liquid, a synthetic resin-based liquid adhesive manufactured by Nikka Seiko Co., Ltd.) WA-302 (main component is polyethylene glycol, vinylpyrrolidone derivative, methanol), WA-20511 / QA-20566 (main component is polyethylene glycol, vinylpyrrolidone derivative, IPA, water) and the like can be used. Peel and clean with warm pure water at ~ 60 ° C

In addition, as the antistatic UV tape 16, a conductive transparent oxide film (ITO (Indium-Tin-Oxide; a mixed transparent oxide film of indium oxide and tin oxide)) or IZO (Indium- Zinc-Oxide; a mixed transparent oxide film of indium oxide and zinc oxide), or a conductive surface-chemically treated one, or a conductive transparent oxide at a level that prevents electrostatic damage in a UV irradiation-curable adhesive. And fine particles (ITO, IZO, etc.) mixed therein. Moreover, what combined these may be used as needed. This antistatic function can prevent electrostatic destruction during the manufacturing process, so that semiconductor characteristics failure due to electrostatic damage can be prevented. The surface resistance of the UV irradiation-curable adhesive before and after curing is desirably of the order of 10 ⁶ to 10 ¹² Ω / □ to prevent electrostatic damage.
In addition, a tape of an antistatic heat-expansion-peelable pressure-sensitive adhesive having no adhesive residue may be used depending on the application.

  When the separation from the high-porosity Si layer 11b is performed by a high-pressure fluid jet spray separation method such as a water jet, an air jet, or a water air jet, a high-pressure fluid jet spray separation apparatus shown in FIG. 35 is used. FIG. 35 is a schematic sectional view of a high-pressure fluid jet spray-peeling apparatus according to an embodiment of the present invention.

  The high-pressure fluid jet spray-peeling apparatus shown in FIG. 35 includes a pair of holders 81a and 81b for vacuum-suctioning and rotating a substrate from above and below, and a fine nozzle 83 for spraying a high-pressure fluid jet 82. The guard ring stopper 80 is a cylindrical jig surrounding the holders 81a and 81b. The guard ring stopper 80 has a slit hole 84 having a diameter of about 10 to 50 μm through which the width of the high-pressure fluid jet 82 ejected from the fine nozzle 83 is controlled and passed. The diameter of the slit hole 84 is determined based on the correlation between the water pressure of the high-pressure fluid jet 82 and the wind pressure.

  In such a high-pressure fluid jet spray-peeling apparatus, for example, a substrate in which a single-crystal Si substrate 10 and a counter substrate 14 shown in FIG. 4 are bonded between holders 81a and 81b. Here, the layer to be separated (separation layer) is the highly porous Si layer 11b. In FIG. 35, for simplicity, illustrations other than the single crystal Si substrate 10, the highly porous Si layer 11b, and the counter substrate 14 are omitted.

  Here, the height of the guard ring stopper 80 and the height of the single-crystal Si substrate 10 and the counter substrate 14 sandwiched between the holders 81a and 81b are adjusted so that the high-pressure fluid jet 82 ejected from the fine nozzle 83 is separated during rotation. Fine adjustment is made so as to accurately hit the highly porous Si layer 11b. Thereafter, the holders 81a and 81b are rotated, and the pressure of the high-pressure fluid jet 82 ejected from the fine nozzle 83 is applied from the lateral direction of the highly porous Si layer 11b to separate the single crystal Si substrate 10.

  At this time, the width of the high-pressure fluid jet 82 ejected from the fine nozzle 83 is controlled by the slit hole 84 of the guard ring stopper 80, and the height thereof is fine so as to exactly hit the highly porous Si layer 11b to be separated. Since it is adjusted, it does not hit the portion other than the target high porous Si layer 11b so strongly that it peels off.

  In addition, the high-pressure fluid jet 82 may be a water jet, an air jet, a liquid such as water, an etchant or alcohol, a gas such as air, a nitrogen gas or an argon gas, or a mixture of the gas and the liquid at an appropriate ratio. It can also be performed by jetting a jet of a mixture of a liquid and a gas. In particular, in jetting of a jet of a mixture of liquid and gas, so-called water air jet, gas bubbles are mixed into the liquid, and separation can be performed more effectively by the impact action at the time of bursting of the bubbles.

  Further, when the high-pressure fluid jet 82 is sprayed, when ultrasonic waves are applied to the fluid, the ultrasonic vibrations act on the porous layer, so that the separation from the porous layer can be performed more effectively. Further, an ultrafine powder of fine particles or powder (abrasive, ice, plastic pieces, etc.) may be added to the high-pressure fluid jet 82. When a fine solid is added to the high-pressure fluid jet 82 in this manner, the fine solid directly collides with the high-porosity Si layer 11b, whereby more effective separation can be performed.

  Alternatively, a laser processing peeling device (not shown) that separates the highly porous Si layer 11b of the rotating substrate by applying a laser beam irradiated from a laser output unit may be used. The difference between this laser processing peeling device and the above-described high-pressure fluid jet spray peeling device is only that the laser output section is equivalent to the combination of the above-described fine nozzle 83 and slit hole 84, and the others are almost the same. Configuration.

  In this laser processing and peeling apparatus, the highly porous Si layer 11b of the rotating substrate is separated from the highly porous Si layer 11b by laser processing (ablation processing, thermal processing, etc.) by irradiating one or more lasers from the lateral direction. can do.

  Here, as the laser, a laser beam such as a visible light, a near ultraviolet ray, a far ultraviolet ray, a near infrared ray, a far infrared ray or the like comprising a carbon dioxide laser, a YAG (Yttrium Aluminum Garnet) laser, an excimer laser, a harmonic modulation laser, or the like can be used. .

In laser processing, the object to be processed is irradiated with at least one or more pulsed or continuous wave laser light that is absorbed by the object to be processed and separated by thermal processing or ablation processing, and has a wavelength that is transmitted to the object to be processed. at least one pulse wave or continuous wave near-infrared laser (Nd: YAG laser, Nd: YVO ₄ laser, Nd: YLF laser, a titanium sapphire laser, etc.) irradiates focused within the object, and multi There is a method in which an optical damage phenomenon due to photon absorption is generated to form a modified region (for example, a crack region, a melt-processed region, a refractive index change region, and the like), and separation is performed with a relatively small force from the modified region.

In general, in the latter case, the light-condensing point is adjusted inside the object to be processed, for example, a single-crystal semiconductor substrate, and the peak power density at the light-condensing point (electric field intensity at the light-condensing point of the pulsed laser light) is 1 × 10 ^8. When the laser beam is irradiated under the condition of (W / cm ² ) or more and the pulse width is 1 μS or less, an optical damage phenomenon due to multiphoton absorption occurs inside the object to be processed, and this optical damage causes heat distortion inside. In this method, a modified region, for example, a crack region is formed therein, and separation is performed with a relatively small force from the modified region. However, compared with a single crystal semiconductor substrate, a porous semiconductor layer or an ion implantation layer described later is used. In the case of a single-crystal semiconductor layer, an optical damage phenomenon due to multiphoton absorption is caused by the peak power density described below, and a modified region (for example, a crack region, a melt processing region, a refractive index change region) is generated. Etc.) may be formed of, it is easy separation from the porous semiconductor layer and later ion implanted layer formed by the laser processing.

  In the case of laser processing, the laser beam is focused on the inside of the object to be processed (that is, the inside of the porous semiconductor layer or the ion implantation layer described later) by a condenser lens in any of the above methods, and the focus is gradually rotating. It can be separated by moving it inside the object to be processed. In particular, in the case of the present invention, since the object to be processed is a porous Si layer or an ion-implanted layer, the separation by the laser beam can be performed efficiently with high precision. At this time, the support substrate may be separated from the porous Si layer or the ion-implanted layer while cooling the opposing substrate side via a UV tape using a support jig that has been cooled as necessary.

  Further, a laser water jet processing / separation apparatus (not shown) for irradiating the high porous Si layer 11b of the rotating substrate with a laser water jet combining a laser beam and a water jet from an output unit to separate the laser water jet may be used. it can. The difference between this laser water jet processing peeling apparatus and the above-mentioned laser processing peeling apparatus and the high pressure fluid jet spray peeling apparatus corresponds to the laser water jet output unit in which the above-mentioned fine nozzle 83 and slit hole 84 are combined. It is only a thing, and others are almost the same configuration.

  Laser waterjet processing The stripping method combines the advantages of waterjet and laser and utilizes the complete reflection of the laser light at the water / air interface. This is a method in which the light is reflected and guided in parallel, and separated by thermal processing or ablation processing by absorption of the laser light. Unlike a conventional laser processing method in which thermal deformation is a problem, the laser water jet is constantly cooled by water, so that the thermal effect on the separation surface, for example, thermal deformation, is reduced.

In this laser water jet processing peeling method, for example, at least one or more pulse wave or continuous wave near-infrared laser (Nd: YAG laser, Nd: YVO ₄ laser, Nd: YLF laser, titanium sapphire laser, etc.) is optional. Processing for irradiating one or more laser water jets sealed in a water column of pure water or ultrapure water from the lateral direction of the highly porous Si layer 11b of the rotating substrate (ablation processing, thermal processing, etc.) ), It is possible to separate from the highly porous Si layer 11b.

  As the laser, laser light such as visible light, near-infrared ray, far-infrared ray, near-ultraviolet ray, or far-ultraviolet ray, such as a carbon dioxide laser, a YAG laser, an excimer laser, and a harmonic modulation laser, can be used. The water column of the water jet having an arbitrary water pressure may be tap water. However, depending on the type of the laser, a water column of pure water or ultra-pure water that does not attenuate the laser without scattering it by diffuse reflection is desirable.

  Note that the above-described high-pressure fluid jet spray separation method, laser processing separation method, and laser water jet separation method employ a video signal processing LSI, a memory LSI, a CPU LSI, and a DSPLSI by separating an ultrathin semiconductor layer or an ultrathin SOI semiconductor layer. It can also be used for manufacturing semiconductor devices such as audio signal processing LSIs, CCDs, CMOS sensors, and BiCMOS. In addition, high-pressure fluid jet injection, laser processing and laser water jet processing can be used to cut single-crystal or polycrystalline semiconductor substrates or transparent or opaque support substrates, or to slice rotating single-crystal or polycrystalline semiconductor ingots. Can also be used.

  At this time, as described above, at least a highly porous Si layer is formed from the single-crystal Si layer 12 along a dividing line when dividing the panel into one panel of each electro-optical display device later, that is, a dividing boundary line in a scribe line. When the groove is formed up to 11b, the separation is further facilitated because the ultra-thin electro-optical display element substrate layer separated from the single crystal Si substrate 10 as the support substrate is divided in advance. It becomes possible.

[5] The low-porous Si layer 11c after the separation is provided with a high-heat-conductive support substrate having a predetermined size such as a 1-inch type or 2-inch type direct-view panel size, for example, a metal support substrate 18 as a support. (See FIG. 6) using an adhesive 17 having an insulating property or a conductive property, and the opposing substrate 14 and the electro-optical display element substrate layer (single-crystal Si layer 12) along the dividing boundary in the scribe line. Disconnect. In addition, blade dicing, laser cutting processing (thermal processing such as carbon dioxide gas laser, YAG laser, excimer laser, and ablation processing, Nd: YAG laser, Nd: YVO ₄ laser, Multi-photon absorption modified laser processing such as Nd: YLF laser, titanium sapphire laser, etc.), diamond cutter, cemented carbide cutter, ultrasonic cutter, high pressure fluid jet injection cutting, laser water jet cutting, etc. May be.

  At this time, since the ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12) has the low-porous Si layer 11c remaining on the surface to be bonded to the metal supporting substrate 18, the adhesion to the adhesive 17 And the metal support substrate 18 is firmly held. Thereafter, the liquid crystal 19 corresponding to the electric field application method and the alignment film from the liquid crystal injection port, for example, nematic liquid crystal (TN type liquid crystal, vertical alignment type liquid crystal, etc.), smectic liquid crystal (ferroelectric liquid crystal, antiferroelectric liquid crystal) as described above. Or other liquid crystal is injected and sealed, and if necessary, heated and quenched to perform a liquid crystal alignment treatment, whereby a reflection type LCD (LCOS) shown in FIG. 6 is obtained.

  As described above, in the present embodiment, separation is performed under the ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12), so that a very thin single-crystal Si thin film having a thickness of, for example, 10 μm can provide high electron and positive electrons. Since an ultra-thin electro-optical display element substrate having a hole mobility can be obtained, an ultra-thin electro-optical display element substrate having a thickness of about 200 μm can be obtained by superposing the counter substrate 14 and the metal supporting substrate 18 each having a thickness of about 100 μm. A high-brightness, high-definition, high-performance reflective LCD (LCOS) can be manufactured with good yield, high productivity, and low cost.

  In this embodiment, a metal is used as a support, but a resin film, glass, or the like can be used as another support. In this case, a resin or a glass material having high thermal conductivity is preferable. When the support is a resin film or glass, it is bonded with a low-temperature-curable or UV-irradiation-curable adhesive at or below the liquid crystal transition point, for example, at 80 ° C. In addition, in the case of projector applications, a metal with good heat dissipation is used as a support. In this case, a high thermal conductivity and a high electrical conductivity mixed with a metal filler are used to promote cooling and ground potential. For example, it is preferable to bond with a low-temperature curing adhesive at 80 ° C.

(4) In the case of manufacturing a top emission type organic EL (see FIGS. 7 and 8)
[1] An organic EL electro-optical display element and peripheral circuits are formed in the single-crystal Si layer 12 obtained in the above (2) by a general-purpose technique to produce an ultra-thin electro-optical display element substrate layer ( (See FIG. 7). After that, it is desirable to form the groove 60 from the single-crystal Si layer 12 to at least the highly porous Si layer 11b along the dividing boundary in the scribe line as described above.

  [2] For each pixel in the ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12), a metal electrode 20c (cathode) connected to the pixel display element, red, After forming the organic EL light emitting layer 20b such as the hole injection layer / light emitting layer / electron injection layer for blue and green, and the transparent electrode 20a (anode), the entire surface is sealed with the moisture resistant transparent resin 21 (see FIG. 7). .

Here, the structure and manufacturing method of the organic EL will be described in detail.
The organic EL layer includes a single-layer type, a two-layer type, and a three-layer type. When the three-layer type of a low-molecular compound is shown, the structure includes an anode, a hole transport layer, a light-emitting layer, an electron transport layer, a cathode, Alternatively, an anode, a hole transporting light emitting layer, a carrier block layer, an electron transporting light emitting layer, and a cathode are used.

  For example, as described above, the display section of the electro-optical display element substrate of the top emission type organic EL has a cathode (metal electrode) such as Li-Al or Mg-Ag connected to the drain of the current driving TFT for each pixel. 20c), an organic EL light emitting layer 20b of red, blue, green or the like is deposited for each pixel, and an anode (transparent electrode 20a) such as an ITO film is formed on the organic EL light emitting layer 20b. Is formed.), And the entire surface is covered with the moisture-resistant transparent resin 21.

  In the case of the top emission organic EL, a cathode such as Li-Al or Mg-Ag connected to the drain of the display TFT is formed in the pixel display portion. At this time, when the cathode covers the current driving MOSTFT, the light emission area becomes large and the cathode becomes a light shielding film, so that self-emission light or the like does not enter the MOSTFT. Therefore, no leak current is generated, and deterioration of TFT characteristics can be avoided.

  [3] The single-crystal Si substrate 10 and the moisture-resistant transparent resin 21 are covered at least with an antistatic UV tape 16 having no adhesive residue, and the high-pressure fluid jet spraying method such as the above-described water jet, air jet, or water air jet is used. Then, the Si substrate 10 is separated from the highly porous Si layer 11b by a laser processing peeling method or a laser water jet processing peeling method (see FIG. 7). After the separation, the UV tape 16 is removed by irradiating UV. The separation method conforms to (3). The separated single-crystal Si substrate 10 can be reused by performing surface re-polishing, etching, heat treatment in an atmosphere containing hydrogen, or the like, as necessary.

  [4] A support such as a metal support substrate 18 having the same 12-inch diameter or one panel size as the electro-optical display element substrate layer (single-crystal Si layer 12) is formed on the low-porous layer 11c after separation with high thermal conductivity and insulation. Alternatively, a top emission type is obtained by laminating an ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12) along a division boundary line in a scribe line with a laser or the like by bonding with an adhesive 17 having conductivity. An organic EL is obtained (see FIG. 8). The dividing method conforms to (3).

  As described above, in the present embodiment, by separating under the ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12), a high electron by a very thin single-crystal Si thin film having a thickness of, for example, 5 to 10 μm is obtained. Since an ultra-thin electro-optical display element substrate having a hole mobility can be obtained, by bonding to a metal support substrate 18 having a thickness of about 100 μm, an ultra-thin about 100 μm-thick, high-luminance, A high-definition and high-performance top-emitting organic EL device can be manufactured with good yield, high productivity, and low cost.

(5) In the case of manufacturing a transmissive LCD, a semi-transmissive LCD, or a bottom emission organic EL (see FIGS. 9 to 16)
[1] An ultra-thin electro-optical display element substrate layer is formed by forming an electro-optical display element of LCD or organic EL and peripheral circuits in the single-crystal Si layer 12 obtained in (2).

[2] At least the pixel opening 100 of the display portion of the low-porosity Si layer 11c of the ultra-thin electro-optic display element substrate layer (single-crystal Si layer 12) is etched by lithography and etching techniques (see FIG. 9). . The etching is performed by plasma etching using Cl + O ₂ , HBr + O ₂ , SF ₆ , CF ₄ , or the like, or an acid-based etchant such as a HF + H ₂ O ₂ + H ₂ O mixed solution, HF + HNO ₃ + CH ₃ COOH mixed solution, or an alkali. This is performed by wet etching using a system etchant or the like.

[3] The removed pixel openings are filled with a transparent resin or an inorganic transparent film 23 as a light transmitting material (see FIG. 10).
In this method, at least one of SiO ₂ , PSG (PhosphoSilicate Glass), BPSG (Boro-PhosphoSilicate Glass), and BSG (BoroSilicate Glass) is formed by sputtering, vacuum deposition, CVD, or the like, for example, to have a thickness of about 15 to 25 μm. Polishing: chemical mechanical polishing) or the like to planarize the surface of the buried portion by forming a light-transmissive buried portion which becomes a flattening film of, for example, about 1 μm on the display TFT forming region of the display portion. . In addition, at this time, a low-temperature fine powder glass powder dispersed in an organic solvent is applied and filled into pixel openings and the like, and is melted at an appropriate temperature, for example, 400 ° C., and a glass thick film is embedded to flatten the surface. Is also good.
Alternatively, the transparent resin 23 is formed, for example, in a thickness of 15 to 25 μm on the entire surface so as to fill the pixel opening, and the surface is flattened by CMP (Chemical Mechanical Polishing) if necessary. The transparent resin 23 is formed by applying a transparent resin such as a silicone-based, urethane-based, epoxy-based, or acrylic-based resin by spin coating or the like, and is cured under a predetermined condition, for example, a predetermined heat treatment. It is needless to say that the thickness of the light transmitting material embedded in the pixel opening before the surface is flattened as described above is adjusted according to the thickness of the single crystal Si layer and the low porous Si layer 11c.

In both cases where the above-described transparent resin is used and where a light-transmitting material such as a glass film or a SiO ₂ film is used, it is necessary to have strong incident ultraviolet light resistance and heat resistance.

  [4] An electro-optical display element substrate can be obtained by opening the drain window of the display TFT of the display unit and forming a transparent electrode 13c such as ITO or IZO on the pixel opening (see FIG. 11).

  [5] After that, an electro-optical display element substrate on which an alignment film 13b is formed and subjected to an alignment process and a sealant and a common agent are applied, and a counter electrode 14 on which a transparent electrode 14a is formed, an alignment film 14b is formed and an alignment process is performed, Overlap and seal.

At this time, in order to establish electrical continuity between one chip in the ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12) and the counter substrate 14, at least two common pad portions in the one chip are provided. Apply a common agent mixed with gold-plated resin micropearl using a dispenser.
Similarly, a sealing agent 15 to which a fiber (gap agent) equivalent to a liquid crystal gap is added is applied to the sealing region for each chip in the ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12).
By the way, at this time, in the case of the direct view type, the liquid crystal gap may be secured by dispersing the micro spacers in the entire screen.
Further, an arbitrary number of projections (OCS; On Chip Spacer) corresponding to a liquid crystal gap may be formed around the pixel opening of the opposing substrate 14 or the electro-optical display element substrate layer (single-crystal Si layer 12).
The opposite substrate 14 is made of a resin film having high transparency, heat resistance, and moisture resistance, or a thin transparent base material such as borosilicate glass, aluminosilicate glass, or microsheet glass. , A microlens array, a black mask, and the like, 14c are formed, a transparent electrode 14a is formed on the entire surface, and an organic or inorganic alignment film 14b that has been subjected to alignment processing for at least one chip is formed.

Incidentally, the sealant and the common agent are a visible light irradiation-curable adhesive, a visible light irradiation-curable adhesive used in combination with heat curing, or an ultraviolet irradiation-curable adhesive, an ultraviolet irradiation-curable adhesive used in combination with heat-curing, and a thermosetting type. Any type of adhesive may be used, but it is preferable to use the same type in terms of characteristics and work surface.
Specific sealing agents and common agents include, for example, a modified acrylate oligomer that exhibits basic properties after curing with the main components of the sealing agent and the common agent, an acrylate monomer that adjusts the viscosity of the liquid, and a visible light curing or UV curing part. Epoxy resin that shows basic properties after curing with the main components of photoinitiator, sealant, and common agent, curing agent that cures epoxy resin, and filler that prevents moisture from entering from outside air in the sealant (silica sphere) ), And a fiber equivalent to a liquid crystal gap.

Furthermore, micropearls of gold-plated resin larger than the liquid crystal gap (for example, about 3 μm larger than the liquid crystal gap) are mixed into the common agent applied to the common pad portion in the TFT substrate chip, and the TFT substrate chip and the counter substrate are mixed. The micropearls are crushed by the pressure at the time of stacking the chips, and the crushed gold-plated resin electrically connects both transparent conductive films.
Also, if there is a liquid crystal alignment film such as polyimide in the seal area, the material and size of the micropearl are used so that the crushed gold-plated resin penetrates and electrically conducts both transparent conductive films. Need to be devised.

  Further, when an organic liquid crystal alignment film such as polyimide is formed on at least one of the sealing regions of the TFT substrate chip or the counter substrate chip by spin coating or the like, filler filling for preventing moisture from entering the sealant from the outside air is required. Importantly, it is necessary to optimize the filler filling rate depending on the LCD panel size. For example, a filler filling rate of about 10 to 30% is preferable for an LCD panel for a projector of about 1 inch size. It is preferable to determine in consideration of the above.

  [6] Then, at least an antistatic UV tape 16 having no adhesive residue is attached to the counter substrate 14 and the single-crystal Si substrate 10, and the single-crystal Si substrate 10 is separated from the highly porous Si layer 11b to be ultra-thin. Is obtained (see FIG. 12). At this time, the single-crystal Si substrate 10 is removed from the highly porous Si layer 11b by a high-pressure fluid jet spray separation method such as a water jet, an air jet, or a water air jet, a laser processing separation method, or a laser water jet processing separation method. To separate. At this stage, it is desirable to form the groove 60 from the single crystal Si layer 12 to at least the highly porous Si layer 11b along a dividing line when dividing into one panel of each electro-optical display device later. Is the same as described above.

  [7] The ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12) with the light transmitting material exposed at the separated pixel opening is transparent with a transparent adhesive 17a as a transparent support such as glass or transparent resin. It is bonded to the support substrate 22 (see FIG. 13). If necessary, the remaining high-porous Si layer or low-high-porosity Si layer remaining on the light-transmitting material in the pixel opening may be etched.

  Then, a heat-resistant transparent adhesive such as a silicone-based, urethane-based, epoxy-based, or acrylic-based adhesive is used. In the case of a transmissive LCD for a projector, a light-resistant transparent adhesive is more preferable. It is preferable that the transparent adhesive 17a does not contain a characteristic-deteriorating element such as a halogen element.

At this time, the separated ultra-thin electro-optical display element substrate has a high thermal conductivity of 1 (W / m · K) or more, which satisfies the optical characteristics, such as quartz glass, transparent crystallized glass (Neoceram, Clearceram). , Zerodur, etc.), and even higher heat conductive glasses such as highly translucent ceramic polycrystals, electrofused MgO of oxide crystals, sintered MgO, Y ₂ O ₃ , Gd ₂ O ₃ , CaO (calcia), AL ₂ O ₃ (sapphire), BeO (beryllia), ZrO ₂ , PbO, TiO ₂ , polycrystalline sapphire, or double oxide crystal YAG (Yttrium Aluminum Garnet), MgAl ₂ O ₄ (spinel; 71.8 Al _{2 O 3, 28.2MgO), LiNbO 3} , BaTiO 3, Bi 12 GeO 20, SrTiO 2, 3Al 2 O 3 · 2SiO 2, Al 2 O 3 · _{iO 2, CaCO 2, ZrSiO 4} , (Pb, La) (Zr, Ti) , etc. _{O 3}, CaF} 2 ((calcium fluoride), CVD diamond film coated high light-ceramic polycrystalline body and the transparent By bonding a transparent support such as crystallized glass and quartz with a light-resistant and heat-resistant transparent adhesive, it exhibits a high heat dissipation effect for strong incident light, resulting in higher brightness, higher definition, and longer length. It is suitable for a transmissive LCD for a projector that has a long life and has improved quality and reliability.
The counter substrate, the dust-proof glass having a low-reflection film formed on the incident side, and the dust-proof glass having a low-reflection film formed on the emission side may also be made of the above-described highly heat-conductive glass. Sapphire dustproof glass, single crystal sapphire opposing substrate, liquid crystal layer, ultra-thin electro-optical display element substrate, single crystal sapphire support substrate, and single crystal sapphire dustproof glass formed with low reflection film By bonding with a transparent adhesive, a higher heat dissipation effect can be expected.

  At this time, a light-shielding film 26a of a black mask is formed on the transparent support substrate 22 corresponding to portions other than the pixel opening portion of the entire peripheral circuit portion and the display portion so as to reduce TFT leakage due to incident light from the back surface. (See FIG. 15A).

[8] The opposing substrate 14 and the electro-optical display element substrate layer (single-crystal Si layer 12) are cut along the division boundaries in the scribe line. In addition, blade dicing, laser cutting (thermal processing such as carbon dioxide laser, YAG laser, excimer laser, etc., ablation processing, Nd: YAG laser, Nd: YVO ₄ laser, Multi-photon absorption modified laser processing such as Nd: YLF laser, titanium sapphire laser, etc.), diamond cutter, cemented carbide cutter, ultrasonic cutter, high pressure fluid jet injection cutting, laser water jet cutting, etc. May be.
Thereafter, a liquid crystal 19 corresponding to an electric field application method and an alignment film from a liquid crystal injection port, for example, a nematic liquid crystal {TN mode liquid crystal, VA (vertical alignment) mode liquid crystal, etc.}, a smectic liquid crystal (ferroelectric liquid crystal, antiferroelectric liquid crystal, etc.). 16) By injecting and sealing a polymer-dispersed liquid crystal or another liquid crystal, and performing a heating / cooling treatment as needed, and a liquid crystal alignment treatment, a transmission type LCD shown in FIG. 16 is obtained.

At this time, the following combinations are preferable for the relationship between the alignment film, the alignment treatment, and the liquid crystal.
(1) In the case of an organic alignment film such as polyimide or polyamide having a thickness of 5 to 50 nm, a TN mode liquid crystal having a positive dielectric anisotropy is subjected to a rubbing treatment.
(2) In the case of an organic alignment film having a thickness of 5 to 50 nm to which a vertical alignment agent such as polyimide or polyamide is added, a TN mode liquid crystal (VA mode liquid crystal) having no negative rubbing treatment and having a negative dielectric anisotropy is used.
(3) In the case of an organic alignment film of polyimide, polyamide or the like having a thickness of 5 to 50 nm, the substrate is irradiated with an argon ion beam at an acceleration voltage of 300 to 400 eV at an angle of 15 to 20 ° with respect to the substrate to be positively irradiated. TN mode liquid crystal having the above dielectric anisotropy is used.
(4) In the case of an organic alignment film of polyimide, polyvinyl cinnamate or the like having a thickness of 5 to 50 nm, the substrate is subjected to a photo-alignment treatment of irradiating a linearly polarized ultraviolet ray of 257 nm perpendicularly to the substrate to obtain a positive dielectric anisotropy. TN mode liquid crystal is used.
(5) In the case of an organic alignment film such as polyimide or polyamide having a thickness of 5 to 50 nm, the substrate is irradiated with a 266 nm YAG laser at an arbitrary angle, for example, at an angle of, for example, 45 °, and has a positive dielectric anisotropy. TN mode liquid crystal is used.
(6) In the case of a silane-based alignment film in which an alkyl group in which a silicon atom and an oxygen atom form a complex is bonded to a silicon atom, no alignment treatment is required and a TN mode (VA mode) having a negative dielectric anisotropy is not required. ) Use liquid crystal.
(7) In the case of an aminosilane-based alignment film, a TN mode liquid crystal having a positive dielectric anisotropy after rubbing is used.
(8) In the case of an inorganic alignment film of an obliquely evaporated film of SiOx having a thickness of 10 to 30 nm, a TN mode liquid crystal having a positive dielectric anisotropy is prepared by adjusting the evaporation angle from the vertical direction of the substrate. Is used.
(9) In the case of an inorganic alignment film having a thickness of 10 to 30 nm of SiOx by vapor deposition or sputtering, an argon ion beam is irradiated with an ion beam at an acceleration voltage of 300 to 400 eV from an angle of 15 to 20 ° with respect to the substrate. A TN mode liquid crystal having a positive dielectric anisotropy is used.
(10) In the case of an inorganic alignment film having a thickness of 10 to 30 nm of SiOx by mirrortron sputtering (directional sputtering), an alignment process is performed by adjusting a sputtering angle with respect to a substrate, and a TN mode liquid crystal having a positive dielectric anisotropy is formed. Used.
(11) In the case of an inorganic alignment film of a DLC (Diamond Like Carbon) film having a thickness of 5 to 20 nm by a CVD method, the substrate is irradiated with an argon ion beam at an acceleration voltage of 300 to 400 eV from, for example, a direction of 45 °. An ion beam alignment treatment is performed, and a TN mode liquid crystal having a positive dielectric anisotropy is used.
(12) On the first alignment film subjected to the processes (1) to (11), a second alignment film of PTFE (polytetrafluoroethylene) film having a thickness of about 50 nm is formed by ion vapor deposition. An anisotropic TN mode liquid crystal is used.
(13) On the first alignment film subjected to the processes (1) to (11), a second alignment film of a PE (polyethylene) film having a thickness of about 50 nm is formed by ion vapor deposition. TN mode liquid crystal is used.
(14) On the first alignment film which has been subjected to the processes (1) to (11), a second alignment film having a polymerized biphenyl-4,4'-dimethacrylate of about 50 nm is formed by ion vapor deposition. TN mode liquid crystal having the above dielectric anisotropy is used.
(15) In the case of an organic alignment film such as polyimide or polyamide, rubbing alignment, light alignment of 257 nm linearly polarized UV irradiation, ion beam alignment of argon ion beam irradiation, or laser alignment treatment of 266 nm YAG laser irradiation is performed. A dielectric (FLC) liquid crystal is used.
(16) In the case of an organic alignment film such as polyimide or polyamide having a thickness of 5 to 50 nm, rubbing alignment, light alignment of 257 nm linearly polarized UV irradiation, ion beam alignment of argon ion beam irradiation, or laser alignment of 266 nm YAG laser irradiation. After processing, an electric field effect birefringent (ECB) liquid crystal is used.

  Here, in the case of a transflective LCD, the single-crystal Si layer 12 and at least the low-porosity Si layer 11c in the pixel opening of the display section are provided in order to provide two regions of reflection and transmission in the pixel electrode on the inner surface of the cell. The surface is planarized by etching and embedding a transparent material as a light-transmitting material, and a part of a moderately uneven reflective electrode such as aluminum connected to the drain of the display TFT is patterned on the pixel opening. A transparent electrode such as ITO or IZO is formed thereon to form a pixel display portion having two regions. By controlling the pixel area ratio of transmission and reflection in this way, it is possible to balance the optical characteristics of transmission and reflection.

  That is, as shown in FIG. 14 (a), a transparent electrode 13c such as ITO or IZO connected to the drain of the display TFT 103 is formed in the pixel opening, and a part of the transparent electrode is formed by a general-purpose lithography technique so as to have an appropriate uneven shape. After forming the conductive resin film 101 and reflowing by heating, a high-reflectance aluminum film connected to the transparent electrode 13c is formed to form the reflective electrode 102 having an appropriate uneven shape, thereby allowing reflection and transmission within one pixel. A pixel electrode having two regions is formed.

  Alternatively, as shown in FIG. 14B, a photosensitive resin film 101 having an appropriate uneven shape is formed in a part of the pixel opening by a general-purpose lithography technique, reflowed by heating, and then connected to the drain of the display TFT 103. By forming an aluminum film having a high reflectivity to form a reflective electrode 102 having an appropriate uneven shape, and forming a transparent electrode 13c in a pixel opening including an aluminum film, two regions of reflection and transmission are provided in one pixel. A pixel electrode may be formed.

  In addition, as a film having a high reflectance, there is a white metal film such as aluminum, an aluminum alloy, silver, a silver alloy, nickel, a nickel alloy, titanium, and a titanium alloy.

  On the other hand, in the case of the bottom emission organic EL as shown in FIG. 17, the single crystal Si layer 12 and at least the low porous Si layer 11c in the pixel opening of the display section are etched to bury a light transmitting material to make the surface flat. Is performed to form an anode (ITO film or the like) 20a connected to the source of the display TFT on the pixel opening.

  In other words, in the case of a transmissive LCD, the pixel opening of the display portion of the ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12) is etched to bury the light-transmitting material 23 to flatten the surface. A transparent electrode 13c and an alignment film 13b connected to the drain of the display element are formed, an alignment process is performed, a sealant and a common agent are applied, and a transparent electrode 14a and an alignment film 14b are similarly formed to form the opposite substrate 14 that has been subjected to the alignment process. After overlapping and sealing at a predetermined liquid crystal gap, the single-crystal Si substrate 10 is separated, and if necessary, the remaining high-porous Si layer 11b or low-porosity remaining on the light-transmitting material in the exposed pixel openings is removed. The Si layer 11c is etched, the transparent support substrate 22 is bonded with a transparent adhesive 17a, divided into each electro-optical display device, and liquid crystal is injected and sealed. Transmission type LCD shown in Figure 16 obtained by countercurrent process.

  In the case of a transflective LCD, a pixel opening of a display portion of an ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12) is etched to bury a light-transmitting material 23 to flatten the surface. The pixel electrode 13c and the alignment film 13b having two regions of reflection and transmission connected to the drain of the pixel display element are formed, alignment processing is performed, a sealant and a common agent are applied, and the transparent electrode 14a and the alignment film 14b are similarly formed. The single crystal Si substrate 10 is separated after overlapping and sealing the opposing substrate 14 on which the alignment treatment has been performed at a predetermined liquid crystal gap, and the peeling residue adhered to the light transmitting material 23 in the exposed pixel opening as necessary. The highly porous Si layer 11b and the low porous Si layer 11c are etched, the transparent support substrate 22 is bonded with a transparent adhesive 17a, divided into each electro-optical display device, and liquid crystal injection sealing is performed. Is transflective LCD of FIG. 16 is obtained by the liquid crystal alignment treatment heating and rapid cooling treatment in accordance with.

  At this time, as for the relationship between the alignment film, the alignment process, and the liquid crystal, a combination according to the above-described transmission type LCD may be used.

  In the case of a bottom emission type organic EL, a pixel opening of a display portion of an ultra-thin electro-optic display element substrate layer (single-crystal Si layer 12) is etched to bury a light-transmitting material 23 to planarize the surface. After forming the transparent electrode 20a, the organic EL light emitting layer 20b, and the metal electrode 20c connected to the source of the TFT for each pixel display unit, the entire surface is sealed with the moisture resistant resin 21, and then the single crystal Si substrate 10 is separated. If necessary, the remaining high-porous Si layer 11b or low-porous Si layer 11c remaining on the light-transmitting material 23 in the exposed pixel opening is etched, and the transparent support substrate 22 is bonded with the transparent adhesive 17a. Then, by dividing into the respective electro-optical display devices, the bottom emission organic EL shown in FIG. 17 can be obtained.

  The display section of the electro-optical display element substrate of the bottom emission organic EL is provided on an anode (transparent electrode 20a) such as an ITO film connected to the source of the current driving TFT for each pixel. An organic EL light emitting layer 20b of red, blue, green, or the like is deposited, and a cathode (metal electrode 20c) such as Li-AL or Mg-Ag is formed thereon (a cathode is formed on the entire surface as necessary). .), And the entire surface is covered with the moisture-resistant resin 21. This sealing prevents moisture from entering from outside, prevents deterioration of the organic EL light-emitting layer 20b that is sensitive to moisture, and prevents oxidation of the electrodes, and enables long life, high quality, and high reliability.

  Alternatively, in the case of a transmissive LCD, a display portion and peripheral circuits of the LCD are formed in the single crystal Si layer 12 to form an ultra-thin electro-optical display element substrate layer, and the single crystal Si layer 12 and the single crystal Si substrate are formed. 10 is covered with at least an antistatic UV tape 16 having no adhesive residue, the single-crystal Si substrate 10 is separated from the highly porous Si layer 11b, and bonded to the transparent support substrate 22 with a heat-resistant transparent adhesive 17a.

Thereafter, portions of the ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12) and the low-porous Si layer 11c corresponding to the pixel openings of the display portion are removed by etching, and the removed portions are light-transmitted. The surface is flattened by embedding with a transparent resin or an inorganic transparent film (such as SiO ₂ ) 23 as a conductive material, a transparent electrode 13 c connected to the drain of the display TFT is formed on the surface, and an alignment film 13 b is formed. Process, applying a sealing agent and a common agent, forming a transparent electrode 14a and an alignment film 14b, and superposing and sealing the opposing substrate 14 with a predetermined liquid crystal gap at a predetermined liquid crystal gap. After the division, a method of injecting and sealing liquid crystal, and performing a heating and rapid cooling treatment to perform a liquid crystal alignment treatment may be employed.

  Alternatively, in the case of a transflective LCD, a display portion and peripheral circuits of the LCD are formed in the single crystal Si layer 12 to form an ultra-thin electro-optical display element substrate layer, and the single crystal Si layer 12 and the single crystal Si The substrate 10 is covered with at least an antistatic UV tape 16 having no adhesive residue, the single-crystal Si substrate 10 is separated from the highly porous Si layer 11b, and bonded to the transparent support substrate 22 with a heat-resistant transparent adhesive 17a.

Thereafter, portions of the ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12) and the low-porous Si layer 11c corresponding to the pixel openings of the display portion are removed by etching, and the removed portions are light-transmitted. The surface is flattened by embedding it with a transparent resin or an inorganic transparent film (such as SiO ₂ ) 23 as a conductive material, and has two regions of a reflective electrode and a transparent electrode with moderate unevenness connected to the drain of the display TFT on the surface. A pixel electrode 13c is formed, an alignment film 13b is formed, an alignment process is performed, a sealant and a common agent are applied, and a transparent electrode 14a and an alignment film 14b are formed and an alignment process is performed. A method of performing the steps of superposing and sealing, dividing into the respective electro-optical display devices, injecting and sealing the liquid crystal, heating and quenching and cooling, and performing a liquid crystal alignment treatment may be employed.

  In the case of a bottom emission type organic EL, an organic EL display section and peripheral circuits are formed in the single crystal Si layer 12 to form an ultra-thin electro-optical display element substrate layer. And the single-crystal Si substrate 10 are covered with at least an antistatic UV tape 16 having no adhesive residue, the single-crystal Si substrate 10 is separated from the high-porosity Si layer 11b, and attached to the transparent support substrate 22 with a heat-resistant transparent adhesive. Match.

Thereafter, portions of the ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12) and the low-porous Si layer 11c corresponding to the pixel openings of the display portion are removed by etching, and the removed portions are light-transmitted. The surface is flattened by embedding with a transparent resin or an inorganic transparent film (SiO ₂ or the like) 23 as a conductive material, and a transparent electrode 20a, an organic EL light emitting layer 20b, and a metal electrode 20c connected to the source of the display TFT are formed on the surface. Then, a process may be performed in which the entire surface is sealed up with the moisture-resistant resin 21 and divided into each electro-optical display device.

Since the electro-optical display element substrate layer (single-crystal Si layer) has high electron and hole mobilities, especially the transmission type LCD for a projector has strong self-emission light in the bottom emission type organic EL due to strong leakage of incident light. Leakage may cause image quality degradation due to TFT leakage.
Therefore, the single crystal Si layer 12 at the pixel opening in the display region of the electro-optic display element substrate layer (single crystal Si layer 12) is etched, and the SiO ₂ film 104 having a thickness of 100 to 300 nm and the SiO ₂ film 104 having a thickness of 100 to 200 nm are formed by a CVD method or the like. The light-shielding metal films 26c are sequentially formed on at least the inner walls of the pixel openings, and a transparent resin or an inorganic transparent film (such as SiO ₂ ) 23 is embedded in the pixel openings, and the surface is flattened by CMP or the like. Here, the light-shielding metal film is preferably made of aluminum, an aluminum alloy, WSi, Ti, Cr, Mo, Ta, Mo-Ta, or the like in order to prevent a TFT leakage current due to strong incident light leakage.

The metal film on the bottom surface of the pixel opening is preferably removed by etching before embedding the transparent resin or the inorganic transparent film (such as SiO ₂ ) 23. However, the pixel opening exposed after the separation of the single crystal Si substrate is performed. The light-shielding metal film on the bottom surface may be etched.

  At this time, by dropping the light-shielding metal film on the inner wall of the pixel opening to the ground potential, fluctuations in TFT characteristics and leakage current due to charge-up by electrons generated by excitation by strong incident light energy are prevented.

That is, after removing the single crystal semiconductor layer in a portion to be a pixel opening in the display region, an insulating film and a light-shielding metal film are sequentially formed on at least the inner surface thereof, and the light-shielding metal film on the bottom of the pixel opening is removed. Then, a translucent material is buried to flatten the surface. By forming a transparent electrode connected to the pixel display element on the surface of the pixel opening, an ultra-thin, high-brightness, transmissive electric device in which a light-shielding metal film is formed on the inner wall of the pixel opening via an insulating film. An optical display is obtained.
If the light-shielding metal film is formed on the TFT at the same time, it is possible to prevent a TFT leak current due to a stronger incident light leak.

  Further, as shown in FIG. 15A, the liquid crystal side of the opposing substrate 14 corresponding to the portion other than the pixel opening in the display area of the ultra-thin electro-optical display device substrate and the entire peripheral circuit is provided. A reflective film 26b is formed on the surface of the transparent support substrate 22 corresponding to the portion other than the pixel opening in the display area of the ultra-thin electro-optical display element substrate and the entire peripheral circuit, and the low reflection light shielding of the black mask is performed. It is desirable to form the film 26a in advance.

  In other words, strong incident light is reflected on the portion of the opposing substrate 14 corresponding to portions other than the pixel openings to prevent unnecessary panel temperature rise, and for the liquid crystal side, for example, aluminum, titanium, A white metal film 26b of nickel, silver, or an alloy thereof is formed.

Then, a low-reflection light shielding film 26a of a black mask is formed on the surface of the transparent support substrate 22 corresponding to portions other than the pixel openings to prevent light from entering from the back surface.
The light-shielding film may be a metal film such as WSi or Cr, a black metal oxide film such as chromium oxide, a resin film with an adhesive of a black mixture such as carbon, or the like.
It is desirable that the reflective and light-shielding metal film be dropped to the ground potential to prevent charge-up due to strong incident light (see FIG. 15).

As described above, in the present embodiment, by separating the support substrate under the ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12), a very thin single-crystal Si thin film having a thickness of, for example, 10 μm is used. An ultra-thin electro-optical display element substrate having electron and hole mobilities is obtained and bonded to a transparent support substrate 22 having a thickness of, for example, about 100 μm with a transparent adhesive. The Si layer 11c is etched, a transparent resin or an inorganic transparent film (such as SiO ₂ ) 23 is buried, the surface of the pixel opening is flattened, and a transparent pixel electrode connected to the pixel display element is formed. Super-thin, high-brightness, high-definition, high-performance transmissive LCD or semi-transmissive LCD or bottom-emission organic EL with high yield and high production to overlap with substrate or form organic EL layer sex It can be manufactured at low cost.

Alternatively, in the present embodiment, the single-crystal Si layer 12 and at least the low-porous Si layer 11c in the pixel opening of the ultra-thin electro-optical display element substrate layer (single-crystal Si layer 12) are etched to form a transparent resin or inorganic resin. A transparent pixel electrode is formed by embedding a transparent film (such as SiO ₂ ) 23 to planarize the surface of the pixel opening and form a transparent pixel electrode connected to the pixel display element. By separating the supporting substrate after the formation, an ultra-thin electro-optical display element substrate having a high electron / hole mobility of, for example, an extremely thin single-crystal Si thin film having a thickness of, for example, 10 μm is obtained. By bonding the substrate 22 with a transparent adhesive, an ultra-thin, high-brightness, high-definition, high-performance transmissive LCD or semi-transmissive LCD or bottom emission organic EL can be obtained with a high yield and a high yield. It can be manufactured at low cost in the production of.

(B) Double Porous Semiconductor Layer Separation Method In the present embodiment, a double porous semiconductor layer separation method using a porous Si layer (the seed semiconductor substrate is separated from the porous semiconductor layer formed on the seed semiconductor substrate). A method for manufacturing an ultra-thin electro-optical display device by separating and separating a supporting semiconductor substrate from a porous semiconductor layer formed on the supporting semiconductor substrate will be described. FIG. 18 to FIG. 26 are manufacturing process diagrams of the ultra-thin electro-optical display device according to the embodiment of the present invention by the double porous Si layer separation method.

(1) A porous Si layer is formed on a single-crystal Si substrate as the seed substrate 30 and a single-crystal Si substrate as the support substrate 33 by anodization (see FIG. 18). At this time, a high porous Si layer 31b having a higher porosity than the high porous Si layer 34b of the support substrate 33 is formed on the seed substrate 30.

[1] First, a 1 × 10 ¹⁹ atoms / cm ³ of boron is deposited on a seed substrate 30 of, for example, 12-inch φ p-type single-crystal Si (resistivity: 0.01 to 0.02 Ω · cm) by a CVD method using monosilane gas and diborane gas. A p-type impurity is added at a concentration of about 5 μm to form a high-concentration epitaxially grown single-crystal Si layer (corresponding to a low-porous Si layer 31 a described later) having a thickness of about 5 μm.

[2] A p-type impurity is added to the surface of the high concentration layer at a concentration of about 5 × 10 ¹⁴ atoms / cm ³ of boron by a CVD method using a monosilane gas or a diborane gas, and a low concentration epitaxially grown single crystal Si layer having a thickness of about 20 μm is formed. (Corresponding to a highly porous Si layer 31b described later).

[3] Further, a p-type impurity is added to the surface of the low-concentration layer at a concentration of about 5 × 10 ¹⁹ atoms / cm ³ by CVD using a monosilane gas or a diborane gas, and single-crystal Si is epitaxially grown at a high concentration of about 5 μm. A layer (corresponding to a low-porous Si layer 31c described later) is formed.

[4] Thereafter, a mixed solution obtained by mixing a 50% hydrogen fluoride solution and ethyl alcohol at a volume ratio of 2: 1 with the electrolytic solution at a current density of about 10 mA / cm ² , for example, by anodizing method. An electric current is applied for 10 minutes to form the low-porosity Si layers 31a and 31c having a low porosity in the high-concentration layer and the high-porosity Si layer 31b having a high porosity in the low-concentration layer.

[5] In the same manner as described above, for example, 1 × 10 ¹⁹ atoms of boron are deposited on a supporting substrate 33 of p-type single crystal Si (resistivity: 0.01 to 0.02 Ω · cm) having a diameter of 12 inches by a CVD method using monosilane gas and diborane gas. A p-type impurity is added at a concentration of about / cm ³ to form a high-concentration epitaxially grown single-crystal Si layer having a thickness of about 10 μm (corresponding to a low-porous Si layer 34a described later).

[6] A p-type impurity is added to the surface of the high-concentration layer at a concentration of about 1 × 10 ¹⁵ atoms / cm ³ of boron by a CVD method using a monosilane gas and a diborane gas, and a low-concentration epitaxially grown single-crystal Si layer having a thickness of about 5 μm is formed. (Corresponding to a highly porous Si layer 34b described later).

[7] Further, a p-type impurity is added to the surface of the low-concentration layer at a concentration of about 3 × 10 ¹⁹ atoms / cm ³ by CVD using a monosilane gas or a diborane gas, and single-crystal Si is epitaxially grown at a high concentration of about 10 μm. A layer (corresponding to a low-porous Si layer 34c described later) is formed.
For forming a single crystal Si layer by the CVD method, in addition to monosilane (SiH ₄ ) as a hydride material, disilane (Si ₂ H ₆ ), trisilane (Si ₃ H ₈ ), and tetrasilane (Si) as hydride materials are also used. ₄ H ₁₀ ) or a raw material gas such as a halide raw material such as dichlorosilane (SiH ₂ Cl ₂ ), trichlorosilane (SiHCl ₃ ), and silicon tetrachloride (SiCl ₄ ) can be used. The method for forming the single crystal Si layer is not limited to the CVD method, but may be an MBE method, a sputtering method, or the like.

[8] Thereafter, a mixed solution obtained by mixing a 50% hydrogen fluoride solution and ethyl alcohol at a volume ratio of 2: 1 with an electrolytic solution, for example, at a current density of about 10 mA / cm ² by anodization, is used. An electric current is applied for 10 minutes to form a low-porosity Si layer 34a having a low porosity in the high-concentration layer, and a high-porosity Si layer 34b having a high porosity in the low-concentration layer.

  When the porous layer is formed by the anodization method, the porous layer can be composed of a plurality of layers having different porosity. For example, as described above, in addition to the three-layer structure in which the first low-porous Si layer 31a, the high-porous Si layer 31b, and the second low-porous Si layer 31c are sequentially formed on the seed substrate 30, A two-layer structure in which a high-porous Si layer 31b and a low-porous Si layer 31c are sequentially formed on the substrate 30 may be used. Similarly, the support substrate 33 may have a two-layer structure in which a highly porous Si layer 34b and a low porous Si layer 34c are sequentially formed on the support substrate 33.

  At this time, the porosity of the high porous Si layer is in the range of 40 to 80%, and the porosity of the low porous Si layer is in the range of 10 to 30%. The thickness of each of the plurality of layers having different porosity can be arbitrarily adjusted by changing the current density and time during anodization and the type or concentration of the formation solution during anodization.

  After the formation of the porous Si layer, the inner wall of the porous Si hole is preferably oxidized by about 1 to 3 nm by performing dry oxidation at about 400 ° C. Thereby, it is possible to prevent the porous Si from undergoing a structural change due to the subsequent high-temperature treatment.

It is preferable that the low-porous Si layers 31c and 34c have a high impurity concentration (1 × 10 ¹⁹ atoms / cm ³ or more) and a low porosity (about 10 to 30%) as much as possible. . This is because it is necessary to form excellent crystalline single-crystal Si layers 32 and 35 by epitaxial growth on these low-porous Si layers 31c and 34c in order to form a semiconductor device described later.

At this time, in order to reduce distortion of a single-crystal Si layer 32 (see FIG. 19) described later,
Porosity: Low porous Si layer 31c <Low porous Si layer 34c
Film thickness: low porous Si layer 31c <low porous Si layer 34c
It is preferred that

In addition, in order to facilitate separation of the seed substrate 30 in a later step, and to prevent the support substrate 33 from being separated when the seed substrate 30 is separated,
Porosity: Highly porous Si layer 31b> Highly porous Si layer 34b
Film thickness: Highly porous Si layer 31b> Highly porous Si layer 34b
It is preferred that

  In addition, in the dissolution reaction of Si in anodization, holes are necessary for the anodic reaction of Si in the hydrogen fluoride solution. Therefore, it is preferable to use P-type Si which is easily made porous, but is not limited thereto. Not something.

  The seed substrate 30 and the support substrate 33 are not only monocrystalline Si substrates formed by the CZ (Czochralski) method, the MCZ (Magnetic Field Applied Czochralski) method, the FZ (Floating Zone) method, etc., but also the substrate surface is hydrogen-annealed. A processed single crystal Si substrate, an epitaxial single crystal Si substrate, or the like can be used. Needless to say, a single-crystal SiGe substrate, a single-crystal compound semiconductor substrate such as a SiC substrate, a GaAs substrate, or an InP substrate can be used instead of the single-crystal Si substrate.

(2) Epitaxially grown single-crystal Si layers 32 and 35 as single-crystal semiconductor layers are formed on both the seed substrate 30 and the support substrate 33, and at least one of them is an SiO ₂ oxide film as an insulating layer 36, and SiO ₂ And a laminated film of Si ₃ N ₄ or a laminated film of SiO ₂ , Si ₃ N ₄ and SiO ₂ (see FIG. 19). The point here is to make the thickness of the single-crystal Si layer 35 larger than the thickness of the single-crystal Si layer 32.

  First, in a CVD epitaxial growth apparatus, prebaking is performed in a hydrogen atmosphere at about 1,050 to 1,100 ° C. to seal the holes on the surfaces of the low-porous Si layers 31c and 34c to flatten the surface. Thereafter, the temperature is lowered to 1000 to 1020 ° C., and CVD using silane gas as a source gas is performed to form epitaxially grown single-crystal Si layers 32 and 35 having a thickness of about 1 to 10 μm. At this time, the single-crystal Si layer 32 has an n-type or p-type impurity concentration corresponding to the semiconductor device in order to manufacture a semiconductor device, and the single-crystal Si layer 35 has a countermeasure against electrostatic damage and electromagnetic wave shielding. It is preferable to contain an arbitrary impurity concentration of n-type or p-type.

For forming a single crystal Si layer by the CVD method, in addition to monosilane (SiH ₄ ) as a hydride material, disilane (Si ₂ H ₆ ), trisilane (Si ₃ H ₈ ), and tetrasilane (Si) as hydride materials are also used. ₄ H ₁₀ ) or a raw material gas such as a halide raw material such as dichlorosilane (SiH ₂ Cl ₂ ), trichlorosilane (SiHCl ₃ ), and silicon tetrachloride (SiCl ₄ ) can be used. The method for forming the single crystal Si layer is not limited to the CVD method, but may be an MBE method, a sputtering method, or the like.

  The thickness of the single-crystal Si layer 32 of the epitaxial growth of the seed substrate 30 on which the semiconductor device is manufactured is equal to or less than the thickness of the single-crystal Si layer 35 of the other support substrate 33 of the epitaxial growth. This is because, due to the expansion of the porous Si layers (low porous Si layers 34a and 34c, high porous Si layer 34b) due to oxidation during the semiconductor device process, distortion occurs in the epitaxially grown single crystal Si layer 32 for manufacturing a semiconductor device. This is to reduce and prevent the operation.

  Also, the thickness of the epitaxially grown single-crystal Si layer 32 for finally producing a semiconductor device is preferably about 50 nm to 1 μm, and the thickness of the single-crystal Si layer 35 is preferably about 5 to 10 μm because it will eventually become a frame.

Further, the thickness of the SiO ₂ oxide film (insulating layer 36) of the single crystal Si layer 35 is desirably 200 to 300 nm. This is because if the thermal oxidation is performed for a long time and the thickness is increased to the order of μm, the single-crystal Si layer 35 is warped due to the thermal oxidation distortion of the highly porous Si layer 34b.

As the insulating film, in addition to the thermally oxidized silicon oxide film SiO ₂ , a silicon nitride film or a silicon nitride film and a silicon oxide film are formed on the single crystal Si layer 35 by low-pressure CVD and thermally oxidized to form a silicon oxide film and a silicon nitride film. A stacked film of films, or a stacked film of a silicon oxide film, a silicon nitride film, and a silicon oxide film (for example, SiO ₂ ; 200 nm and Si ₃ N ₄ ; 50 nm and SiO ₂ ; 200 nm) may be used. Further, a silicon oxynitride film (SiON) may be used. Note that the single-layer film or the multilayer insulating film may be formed by a CVD method, a sputtering method, an MBE method, or the like.

As described above, the presence of the nitride-based silicon film insulating film having an appropriate thickness allows the characteristic deterioration element, for example, the halogen element from the support substrate 33 side during LCD assembly or organic EL assembly or a semiconductor device process in a later process. It can be prevented from penetrating and contaminating the single crystal Si layer 32. Also, warpage of the epitaxially grown single-crystal Si layer 32 for manufacturing a semiconductor device is caused by expansion due to oxidation of the porous Si layers (low-porous Si layers 34a and 34c, high-porous Si layer 34b) during the semiconductor device process. Occurrence can be reduced and prevented.
Furthermore, since the nitride silicon film acts as an etching stopper when etching the porous Si layer under the insulating layer of the ultra-thin SOI structure after the separation, the ultra-thin SOI structure with no etching unevenness An electro-optic display element substrate is obtained.

  In addition, as a countermeasure against electrostatic damage and electromagnetic wave shielding in LCD assembling or organic EL assembling, set assembling and in the market, an arbitrary concentration of n-type or p-type impurities is added to the single crystal Si layer 35 during ion implantation or epitaxial growth to oxidize. It may be activated at the time of film formation or the like. By adding an arbitrary concentration of n-type or p-type impurities to the single-crystal Si layer 35 under the insulating layer 36 that remains to the end, the quality and reliability of the electro-optical display device can be improved.

(3) The seed substrate 30 and the support substrate 33 are bonded together (see FIG. 20).
At room temperature, the surfaces of the single-crystal Si layer 32 of the seed substrate 30 and the surface of the insulating layer 36 of the support substrate 33 are brought into contact with each other and bonded by Van der Waals force. Thereafter, a heat treatment is performed at 400 ° C. for 30 minutes for covalent bonding to strengthen the bonding.
If necessary, a heat treatment at a higher temperature than the above, for example, about 1000 ° C. for 30 to 60 minutes may be added to perform stronger bonding. The heat treatment is performed in nitrogen, an inert gas, or a mixed gas of nitrogen and an inert gas. At this time, it is confirmed that there is no dust or dirt on the surfaces of both substrates. In addition, when there is a foreign substance, it is separated and washed.

  Alternatively, two superimposed substrates are set in a reduced pressure heat treatment furnace, and are held at a predetermined pressure (for example, 133 Pa (1 Torr) or less) by evacuation, and are brought into close contact with each other by a pressure when a break occurs to the atmospheric pressure after a certain period of time. Alternatively, a continuous operation of performing heat treatment bonding by heating and heating in nitrogen, an inert gas, or a mixed gas of nitrogen and an inert gas continuously may be performed.

(4) Separating the seed substrate 30 from the highly porous Si layer 31b by a high-pressure fluid jet spray separation method such as a water jet, an air jet, or a water air jet, a laser processing separation method, or a laser water jet processing separation method (FIG. 21). reference). The separation method conforms to (A).
The single-crystal Si substrate of the separated seed substrate 30 can be reused by performing surface re-polishing, etching, heat treatment in an atmosphere containing hydrogen, and the like, as necessary.

  At this time, as shown in FIGS. 36 (a) and (b), the diameter of the seed substrate 30 on which the single crystal semiconductor layer 32 is formed via the porous semiconductor layers 31a, 31b, 31c is changed to the porous layer semiconductor layer 34a, It is preferable that the diameter is slightly smaller or larger than the diameter of the support substrate 33 on which the single crystal semiconductor layer 35 is formed via the layers 34b and 34c.

  Accordingly, for example, when the seed substrate diameter> the supporting substrate diameter in FIG. 36A, the high-pressure fluid jet is started from the sideways direction, and when the seed substrate diameter <the supporting substrate diameter in FIG. Injection or laser water jet injection is applied to the highly porous semiconductor layer 31b of the seed substrate 30 to separate the seed substrate 30, and at the same time, a high-pressure fluid jet injection force or laser water jet to the highly porous semiconductor layer 34b of the support substrate 33 is applied. The ejection force is weakened so that the support substrate is not separated from the highly porous semiconductor layer 34b of the support substrate 33.

  In addition, the porosity and thickness of the porous semiconductor layers of the seed substrate 30 and the support substrate 33 can be reduced, so that the single-crystal semiconductor layer 32 is formed on the support substrate 33 during the process of forming the display element and the peripheral circuit. It is possible to prevent the layers 34a, 34b, and 34c from being adversely affected by thermal expansion, for example, being subjected to warp distortion.

  Then, as shown in FIG. 37A, the periphery of the surface of the support substrate 33 including the single crystal semiconductor layers 32 and 35 and the porous layer semiconductor layers 31c, 34a, 34b, and 34c after the separation of the seed substrate is C-chamfered. By doing so, chipping, cracking, and cracking of the ultra-thin SOI layer and the like in the peripheral portion are prevented, so that yield and quality are improved, and cost reduction is realized. Further, if necessary, light etching may be performed with a hydrofluoric acid-based etchant to remove Si dust and microcracks.

(5) Wet etching of the remaining high-porous Si layer 31b and low-porous Si layer 31c with a hydrofluoric acid-based etchant or an alkali-based etchant such as a mixed solution of HF + H ₂ O ₂ + H ₂ O or a mixed solution of HF + HNO ₃ + CH ₃ COOH. I do.

  In the case of the high pressure fluid jet spray peeling method, which is physical peeling, the wet etching is necessary because the porous Si layer is easily peeled off. However, in the case of the laser processing peeling method or the laser water jet processing peeling method, local peeling is performed. Since the peeling is performed by heating and melting, the peeling residue of the porous Si layer hardly occurs, and the wet etching is not necessarily required, and only the dry etching by the hydrogen annealing treatment may be used.

  Thereafter, the single crystal Si layer 32 is dry-etched by hydrogen annealing to form an ultra-thin SOI structure of the single crystal Si layer 32 having a desired thickness and high flatness, for example, a thickness of 50 to 100 nm. The hydrogen annealing is performed at an etching rate of 0.0013 nm / min at 1,050 ° C. and 0.0022 nm / min at 1,100 ° C., for example.

If necessary, a single-crystal Si layer 13 having a higher crystallinity and an arbitrary thickness may be formed by Si epitaxial growth using the single-crystal Si layer 32 subjected to the hydrogen annealing treatment as a seed.
FIGS. 22A and 22B show a state in which the single-crystal Si layer 13 is formed after the hydrogen annealing etching, and FIG. 22A shows an example in which SiO ₂ 36a is formed as the insulating layer 36, and FIG. An example in which SiO ₂ 36a, Si ₃ N ₄ 36b and SiO ₂ 36a are formed is shown.

  At this time, as described in (A), a single-crystal Si layer 32 as a strain applying semiconductor layer, which is a SiGe layer having a Ge concentration of, for example, 20 to 30%, is formed via the porous Si layer of the seed substrate. When the single-crystal Si layer 13 as a strain channel layer is formed on the single-crystal Si layer 32 after the substrate separation, the electron mobility is about 1.76 times as large as that of the conventional single-crystal Si layer 32 as the strain-free channel layer. As a result, the MOSTFT display section and peripheral circuits that achieve the improvement of the above are realized, so that a high-performance, high-definition, high-quality ultra-thin electro-optical display device is realized.

If the Ge composition ratio is large, it is better. If the Ge composition ratio is much less than 0.2, a remarkable improvement in the mobility of the MOSTFT cannot be expected. If the Ge composition ratio exceeds 0.5, the SiGe layer surface unevenness increases and the film quality deteriorates. However, about 0.3 is preferable.
Further, the Ge concentration is gradually increased in the single crystal Si layer 32 as a strain applying semiconductor layer which is a SiGe layer to form a gradient composition having a desired concentration on the surface, and a strain channel layer is formed on the SiGe layer having this gradient composition. It is preferable to form the single-crystal Si layer 13 in this order.
That is, the single crystal Si layer 32 of the strain applying semiconductor layer has a gradient composition from a portion in contact with the insulating layer 36 so that the Ge concentration gradually increases and the surface concentration becomes a desired value of, for example, a Ge concentration of 20 to 30%. Preferably, the single crystal Si layer 13 as a strain channel layer is formed by Si epitaxial growth using the single crystal Si layer 32 as a strain applying semiconductor layer, which is a SiGe layer having this gradient composition, as a seed.

(6) A TFT or a wiring as a display element of an LCD or an organic EL, a TFT, a diode, a resistor, a capacitor, a coil or a wiring as a peripheral circuit are provided in a single crystal Si layer 32 having an ultra-thin SOI structure by a general-purpose technology. Then, one or both of the semiconductor element and the semiconductor integrated circuit are formed to manufacture an electro-optical display element substrate layer having an ultra-thin SOI structure. Since the single-crystal Si layer 32 has a high electron-hole mobility similar to a single-crystal Si substrate, a video signal processing circuit, an image correction circuit, a memory circuit, a CPU (Central Processing Unit) circuit, and a DSP (Digital Signal Processor) A circuit or the like may be incorporated. At the same time, an external extraction electrode such as a solder bump connected to a peripheral circuit of an electro-optical display element substrate layer having an ultra-thin SOI structure is formed. After the LCD panel is formed, anisotropic conductive film bonding, ultrasonic bonding, and soldering are performed. It is preferable to perform bonding with a flexible substrate or mounting on a PCB by attachment or the like. Illustration of TFTs, diodes, resistors, capacitors, coils, wirings, and the like is omitted. The steps of assembling the LCD and the organic EL conform to (A).
When a bump such as solder is formed on the external extraction electrode, the bump height is preferably equal to or less than the thickness of the counter substrate.

  At this time, by forming a peripheral circuit having a multilayer wiring structure or a display portion and a peripheral circuit on the single crystal semiconductor layer, the degree of integration is increased, and a high-definition, high-performance, high-quality, inexpensive ultra-thin electro-optical display device is obtained. Realize.

  Furthermore, by forming peripheral circuits also in the single crystal semiconductor layer in the seal region, the number of wafers to be taken per wafer due to shrinkage of the LCD panel size increases, thereby realizing cost reduction.

  In addition, by forming not only a display portion but also a part of a peripheral circuit including a memory circuit on a single crystal semiconductor layer below a reflective electrode, the integration degree is increased to achieve high definition, high performance, high quality and ultra-thin ultra-thin. Type electro-optical display device is realized.

Thereafter, it is desirable to form the groove 60 from the single-crystal Si layer 32 to at least the highly porous Si layer 34b along the division boundary in the scribe line, as described above. The groove 60 may be formed after the organic or inorganic alignment film 13b is formed on the electro-optical display element substrate layer (single-crystal Si layer 32) having the ultra-thin SOI structure and subjected to the alignment treatment. The groove 60 is formed by dry etching (plasma etching with SF ₆ , CF ₄ , Cl + O ₂ , HBr + O ₂ , reverse sputter etching, etc.), wet etching (HF + H ₂ O ₂ + H ₂ O mixed solution, HF + HNO ₃ + CH ₃ COOH). Single-crystal Si layer 32 having an arbitrary width by hydrofluoric acid-based etchant, alkali-based etchant, or the like of a mixed solution, or mechanical processing (cutting grooves by blade dicing, diamond cutter, cemented carbide cutter, ultrasonic cutter, or the like). It is desirable to form from the surface to at least the separation layer of the highly porous Si layer 34b. Thereby, separation from the separation layer can be easily performed.

Among these, ultra-thin by dry etching or wet etching having a high etching selectivity between Si and an insulating film (SiO ₂ , Si ₃ N _4, etc.) or by a combination of mechanical processing and dry etching or wet etching. By promoting side etching of the porous Si layer under the insulating film having the SOI structure, separation at the time of peeling may be promoted.

(7) In the case of an LCD, an organic or inorganic alignment film 13b is formed on an electro-optical display element substrate layer (single crystal Si layer 32) having an ultra-thin SOI structure, subjected to alignment treatment, washed, and coated with a sealant and a common agent. Similarly, an organic or inorganic alignment film 14b is formed on the transparent electrode 14a, and an alignment process is performed. Then, the substrate is overlapped with a cleaned, for example, 12-inch φ counter substrate 14 with a predetermined liquid crystal gap (see FIG. 23). Thereafter, the support substrate 33 and the counter substrate 14 are covered with at least an antistatic UV tape 16 having no adhesive residue, and a high-pressure fluid jet spray peeling method such as a water jet, an air jet, or a water air jet, a laser processing peeling method, or a laser water The support substrate 33 is separated from the highly porous Si layer 34b by a jet processing separation method or the like (see FIG. 24). The separation method conforms to (A). At this time, the support jig is supported from the highly porous Si layer 34b while cooling the opposing substrate 14 via the UV tape 16 using a support jig which is fluid-cooled as necessary. The substrate 33 may be separated. Note that the separated single-crystal Si substrate of the support substrate 33 can be reused by performing surface repolishing, etching, heat treatment in an atmosphere containing hydrogen, or the like, as necessary.

(8) Here, in the case of a reflection-type LCD, for example, an adhesive 17 having a high thermal conductivity of a predetermined dimension of, for example, 12 inches φ or one panel size, for example, a metal supporting substrate 18 having a high thermal conductivity and an electrical conductivity, The UV tape 16 is peeled off by UV irradiation curing. The opposing substrate 14, the electro-optical display element substrate layer (single-crystal Si layer 32) having an ultra-thin SOI structure, the metal supporting substrate 18, and the like are divided by a laser or the like. Thereafter, the liquid crystal is injected and sealed, and if necessary, heated and quenched to perform a liquid crystal alignment treatment, whereby a reflection type LCD shown in FIG. 25 is obtained. Others conform to (A).

(9) In the case of a top emission type organic EL, it is bonded to a metal support substrate 18 having a predetermined dimension of, for example, 12 inches or 1 panel by using an adhesive 17 having high thermal conductivity and electrical conductivity, and cured by UV irradiation. Then, the UV tape 16 is peeled off and divided by a laser or the like along the division boundary line in the scribe line, whereby the top emission organic EL shown in FIG. 26 is obtained. Others conform to (A).

(10) When manufacturing a transmissive LCD, a transflective LCD, or a bottom emission organic EL, as described in (7), an electro-optical display element substrate layer is formed in a single crystal Si layer 32 having an ultra-thin SOI structure. After the fabrication, the support substrate 33 is separated from the highly porous Si layer 34b by bonding the UV tape 16 as described in (5) of (A), and the heat-resistant transparent substrate 22 is formed on the transparent support substrate 22 having a diameter of, for example, 12 inches. Adhere with adhesive. Thereafter, the UV tape 16 is removed by irradiating ultraviolet rays to display the electro-optical display element layer (single-crystal Si layer 32), the insulating layer 36, the single-crystal Si layer 35, and the low-porosity Si layer 34c having the ultra-thin SOI structure. The portion corresponding to the pixel opening of the portion is removed by etching, and the removed portion is buried with a transparent resin or an inorganic transparent film (such as SiO ₂ ) 23 as a light-transmitting material to flatten the surface, and display thereon. A transparent electrode 13c connected to the drain of the TFT for use or a pixel electrode 13c having two regions of a reflective electrode and a transparent electrode having a moderately uneven shape, for example, a counter substrate 14 of 12 inch φ or 1 panel size and a predetermined liquid crystal gap. Seal with overlapping. The subsequent steps conform to (A).

Alternatively, in the case of a transmissive LCD, before separating the support substrate 33, an electro-optical display element substrate layer (single-crystal Si layer 32) having an ultra-thin SOI structure, an insulating layer 36, a single-crystal Si layer 35, and a low-porosity The portion corresponding to the pixel opening of the display portion of the Si layer 34c is removed by etching, and the removed portion is buried with a transparent resin or an inorganic transparent film (such as SiO ₂ ) 23 as a light transmitting material to flatten the surface. Then, a transparent electrode 13c connected to the drain of the display TFT is formed thereon, and the transparent electrode 13c is overlapped and sealed with a counter substrate 14 of, for example, 12 inches or 1 panel size at a predetermined liquid crystal gap. The subsequent steps conform to (A).

Alternatively, in the case of a transflective LCD, before separating the support substrate 33, an electro-optical display element substrate layer (single-crystal Si layer 32) having an ultra-thin SOI structure, an insulating layer 36, a single-crystal Si layer 35, and a low-porosity The portion corresponding to the pixel opening of the display portion of the porous Si layer 34c is removed by etching, and the removed portion is buried with a transparent resin or an inorganic transparent film (such as SiO ₂ ) 23 as a light transmitting material to make the surface flat. And a pixel electrode 13c having two regions of a reflective electrode and a transparent electrode having a moderate unevenness connected to the drain of the display TFT is formed thereon. Seal by overlapping with the liquid crystal gap. Subsequent steps conform to (A).

Alternatively, in the case of the bottom emission organic EL, before separating the support substrate 33, an electro-optical display element substrate layer (single-crystal Si layer 32) having an ultra-thin SOI structure, an insulating layer 36, a single-crystal Si layer 35, The portion corresponding to the pixel opening of the display portion of the porous Si layer 34c is removed by etching, and the removed portion is buried with a transparent resin or an inorganic transparent film (such as SiO ₂ ) 23 as a light transmissive material to form a surface. After flattening, a transparent electrode 20a connected to the source of the display TFT is formed thereon, an organic EL light emitting layer 20b and a metal electrode 20c are formed, and the entire surface is sealed with a moisture resistant resin 21. The subsequent steps conform to (A).

In the case of the above-mentioned transmissive LCD, transflective LCD or bottom emission organic EL, a portion corresponding to a pixel opening of a display portion of an electro-optical display element substrate layer (single crystal Si layer 32) having an ultra-thin SOI structure. Was removed by etching, and the removed portion was buried with a transparent resin or an inorganic transparent film (such as SiO ₂ ) 23 as a light-transmitting material to flatten the surface, and then connected to the drain or source of the display TFT. After the pixel electrode 13a is formed and the support substrate 33 is separated, all the single crystal Si layers 35 and the low porous Si layer 34c below the insulating layer 36 are etched using the insulating layer 36 as an etching stopper. It may be attached to a transparent substrate 22 of inch φ or one panel size with a transparent adhesive. In the case of the above-mentioned reflective LCD, transmissive LCD or semi-transmissive LCD, an organic substrate is formed on an opto-substrate 14 having an ultra-thin SOI structure electro-optical display element substrate layer (single-crystal Si layer 32) and a transparent electrode. It goes without saying that a system or inorganic alignment film is formed and the alignment treatment is performed, and a sealant and a common agent are applied to either of them.

(C) Ion Implantation Layer Separation Method In this embodiment, a method for manufacturing an ultra-thin electro-optical display device by an ion implantation layer separation method using a hydrogen ion implantation layer will be described. 27 and 28 are manufacturing process diagrams of the ultra-thin electro-optical display device according to the present embodiment by the ion implantation layer separation method.

(1) For example, an LCD or an organic EL display portion and peripheral circuits are formed on a single-crystal Si substrate 10 as a support substrate having a diameter of 12 inches and a thickness of 1.2 mm to produce an ultra-thin electro-optical display element substrate layer. Thereafter, a high concentration hydrogen ion implanted layer 37 is formed at a depth of 3 to 5 μm from the surface of the single crystal Si substrate 10 (see FIG. 27). The dose of the hydrogen ion implantation is 300 to 500 keV and 5 × 10 ¹⁶ to 1 × 10 ¹⁷ atoms / cm ² .

At this time, as described in (A), a single-crystal Si layer as a strain applying semiconductor layer, for example, a SiGe layer having a Ge concentration of 20 to 30% is formed on the single-crystal Si substrate 10, and further, on the single-crystal Si layer. When a single-crystal Si layer is formed as a strained channel layer, a display portion and a peripheral circuit of a MOSTFT that achieve a significant improvement in electron mobility of about 1.76 times as compared with a single-crystal Si layer of a conventional unstrained channel layer Therefore, a high-performance, high-definition, high-quality ultra-thin electro-optical display device is realized.
Note that the thickness of the strain applying semiconductor layer and the strain channel layer may be the same as that of the high-concentration hydrogen ion implanted layer 37.

If the Ge composition ratio is large, it is better. If the Ge composition ratio is much less than 0.2, a remarkable improvement in the mobility of the MOSTFT cannot be expected. If the Ge composition ratio exceeds 0.5, the SiGe layer surface unevenness increases and the film quality deteriorates. However, about 0.3 is preferable.
Further, the Ge concentration is gradually increased in the SiGe layer to form a gradient composition having a desired concentration of, for example, 20 to 30% on the surface. It is preferable to form a single crystal Si layer as a strain channel layer by Si epitaxial growth using the layer as a seed.

At this time, in order to make the high-concentration hydrogen ion implanted layer 37 in the single-crystal Si substrate uniform and to prevent high-concentration hydrogen ion desorption, high-concentration hydrogen ion implantation is performed after the process step of 500 ° C. or higher. The layer 37 is formed.
In addition, since electrodes, wirings, and the like cause variations in the depth of hydrogen ion implantation, it is preferable to form them before or after peeling annealing after the hydrogen ion implantation step.

  However, in the case of forming electrodes and wirings before the peeling annealing, while cooling the electro-optical display element substrate layer side via a UV tape by a fluid-cooled support jig, the back side of the support substrate (single-crystal Si substrate 10) is used. Stripping annealing by rapid heating and rapid cooling RTA, laser processing stripping method without stripping annealing, and laser water jet processing stripping method are preferable.

  Since the single crystal Si layer 12b has high electron and hole mobilities similar to the single crystal Si substrate, not only a peripheral driving circuit but also a video signal processing circuit, an image quality correction circuit, a memory circuit, a CPU (Central Processing Unit) A circuit or a DSP (Digital Signal Processor) circuit may be incorporated. The conditions are based on (A). Illustration of diodes, resistors, capacitors, coils, wiring, and the like is omitted.

  At this time, by forming a peripheral circuit or a display portion and a peripheral circuit having a multi-layer wiring structure on the single crystal semiconductor layer, an ultra-thin electro-optical display device with high integration, high definition, high performance, high quality and low cost can be obtained. Realize.

  Further, by forming a peripheral circuit also in the single crystal semiconductor layer in the seal region, the number of wafers to be taken per wafer due to shrinkage of the LCD panel size is increased, thereby realizing cost reduction.

  In addition, by forming not only a display portion but also a part of a peripheral circuit including a memory circuit on a single crystal semiconductor layer below a reflective electrode, the integration degree is increased to achieve high definition, high performance, high quality and ultra-thin ultra-thin. Type electro-optical display device is realized.

  In addition, as the support substrate 10, not only a single-crystal Si substrate prepared by a CZ (Czochralski) method, an MCZ (Magnetic Field Applied Czochralski) method, an FZ (Floating Zone) method, but also the substrate surface is subjected to a hydrogen annealing treatment. A single crystal Si substrate, an epitaxial single crystal Si substrate, or the like can be used. Needless to say, a single-crystal SiGe substrate, or a single-crystal compound semiconductor substrate such as a SiC substrate, a GaAs substrate, or an InP substrate can be used instead of the single-crystal Si substrate.

(2) An annealing process for peeling is performed to generate a strained layer 38 in the hydrogen ion implanted layer 37. The annealing for peeling is, for example, a heat treatment at 400 to 600 ° C. for 1 to 20 minutes, or a rapid thermal annealing (RTA) of rapid heating and rapid cooling, for example, a halogen lamp annealing at about 800 ° C. for several seconds with a Xe flash lamp. Annealing is performed at a temperature of about 1000 ° C. for several milliseconds by heat treatment such as laser thermal processing using a carbon dioxide gas laser or the like.

Thus, the ion-implanted high-concentration hydrogen is thermally expanded, and a strain layer 38 is generated in the hydrogen ion-implanted layer 37 by the pressure action and the crystal rearrangement action in the microbubbles. In particular, if the peeling annealing is performed in a very short time of RTA (for example, halogen lamp annealing at about 800 ° C. for several seconds, Xe flash lamp annealing at about 1000 ° C. for several milliseconds), device characteristics and the like are adversely affected. Without distortion.
Note that the hydrogen ion implanted layer 37 may be separated by laser processing peeling or laser water jet processing peeling without performing the peeling annealing treatment.

The groove 60 is formed by dry etching (plasma etching with SF ₆ , CF ₄ , Cl + O ₂ , HBr + O ₂ , reverse sputter etching, etc.), wet etching (HF + H ₂ O ₂ + H ₂ O mixed solution, HF + HNO ₃ + CH ₃ COOH). Single-crystal Si substrate 10 having an arbitrary width by hydrofluoric acid-based etchant, alkali-based etchant, or the like of a mixed solution, or mechanical processing (cutting grooves by blade dicing, diamond cutter, cemented carbide cutter, ultrasonic cutter, or the like). It is preferable to form from the surface to at least the strained layer 38 of the hydrogen ion implanted layer 37. Thereby, separation from the strained layer 38 can be easily performed.

  In order to prevent damage to the ultra-thin electro-optic display element substrate layer, it is preferable to radiate heat from the back surface of the support substrate (single-crystal Si substrate 10) when performing rapid heating and rapid cooling RTA. In addition, while cooling the electro-optical display element substrate layer side via a UV tape by a fluid-cooled support jig as needed, RTA of rapid heating and rapid cooling is performed from the back surface of the support substrate (single crystal Si substrate 10). You may.

  After this, the transparent pixel electrodes, wiring, external extraction electrodes (solder bumps, etc.) of the display section are formed. After the LCD panel is formed, bonding to the flexible substrate by anisotropic conductive film bonding, ultrasonic bonding, soldering, etc. It is preferable to mount it on a printed circuit board (PCB). When a bump such as solder is formed on the external extraction electrode, the bump height is preferably equal to or less than the thickness of the counter substrate.

(3) The process of assembling the LCD and the organic EL conforms to (A).

(4) In the case of an LCD, the single crystal Si substrate 10 and the counter substrate 14 are covered with a UV tape, and are pulled off from the strain 38 of the hydrogen ion implanted layer 37 (see FIG. 28). After that, it is cured by UV irradiation, and the UV tape is removed. The separated single-crystal Si substrate 10 can be reused by performing surface re-polishing, etching, heat treatment in an atmosphere containing hydrogen, or the like, as necessary.

  The separation of the hydrogen ion-implanted layer 37 from the strain 38 can be performed by a high-pressure fluid jet spray separation method similar to that in FIG. Further, the separation can be performed by a laser processing separation method or a laser water jet processing separation method on the hydrogen ion implanted layer 37 without separation annealing.

In other words, the high-concentration hydrogen ion-implanted by the local heating of the laser processing exfoliation method is thermally expanded while cooling the opposing substrate 14 side via the UV tape by the support jig which is fluid-cooled as needed, and the microbubbles are formed. The support substrate (single-crystal Si substrate 10) may be separated by generating a strained layer 38 in the hydrogen ion implanted layer 37 by the pressure action and the crystal rearrangement action of.
In the laser water jet processing peeling method, since water for cooling is irradiated simultaneously with the laser, a support jig cooled by fluid is not necessarily required.

  Subsequent assembling steps of the reflection type LCD, the top emission type organic EL, the transmission type LCD, the semi-transmission type LCD or the bottom emission type organic EL are in accordance with (A). Although hydrogen ions are implanted in the present embodiment, a rare gas such as nitrogen or helium may be used instead.

  In the case of hydrogen ion implantation, for example, in addition to an ion implantation apparatus for mass-separating and scanning a hydrogen ion beam (the same as an ion implantation apparatus for implanting impurities such as boron and phosphorus into a Si substrate), a plasma generating means is used. A hydrogen negative ion beam implanter for generating a hydrogen-containing plasma, extracting a hydrogen negative ion beam from the plasma, and implanting the hydrogen negative ions to a predetermined depth may be used.

(D) Double ion implantation layer separation method In the present embodiment, the double ion implantation layer separation method using a hydrogen ion implantation layer (separating the seed semiconductor substrate from the ion implantation layer formed on the seed semiconductor substrate, A method of manufacturing an ultra-thin electro-optical display device by separating the supporting semiconductor substrate from the ion-implanted layer formed on the supporting semiconductor substrate) will be described. FIG. 29 to FIG. 31 are manufacturing process diagrams of the ultra-thin electro-optical display device by the double hydrogen ion implantation layer separation method in the embodiment of the present invention.

(1) SiO ₂ 41a as an insulating layer (see FIG. 29A) or a laminated film of SiO ₂ 41a, Si ₃ N ₄ 41b and SiO ₂ 41a (for example, on a support substrate 40 having a diameter of 12 inches and a thickness of 1.2 mm) 29B), and a hydrogen ion implanted layer 43 is formed on a seed substrate 42 having a diameter of, for example, 12 inches and a thickness of 1.2 mm. The high-concentration hydrogen ions are implanted at a depth of about 1 μm at a dose of about 100 keV and 5 × 10 ¹⁶ to 1 × 10 ¹⁷ atoms / cm ² .

(2) The support substrate 40 and the seed substrate 42 are bonded together (see FIG. 29).
After cleaning the support substrate 40 and the seed substrate 42, the thermally oxidized film SiO ₂ 41a of the support substrate 40 (see FIG. 29A) or the laminated film of SiO ₂ 41a, Si ₃ N ₄ 41b, and SiO ₂ 41a (FIG. 29 (b)) The surface and the surface of the hydrogen ion implanted layer 43 of the seed substrate 42 are brought into contact with each other and bonded by Van der Waals force. Thereafter, a heat treatment is performed at 400 ° C. for 30 minutes for covalent bonding to strengthen the bonding. The heat treatment at this time needs to be set at a processing temperature and a processing time lower than the hydrogen ion desorption temperature, and is the same as that described in (B).

(3) After annealing for peeling, UV tapes 45 are attached to the back surfaces of both the support substrate 40 and the seed substrate 42, respectively, and pulled and peeled (see FIG. 30).
The peeling anneal conforms to (C).

  By the peeling annealing, the ion-implanted high-concentration hydrogen is thermally expanded to generate a strained layer 43a in the hydrogen ion-implanted layer 43 by the pressure action and the crystal rearrangement action in the microbubbles. Then, the UV tape 45 is peeled from the support substrate 40 and the seed substrate 42 by UV irradiation curing.

In addition, it can also be performed by the same high pressure fluid jet spray peeling method, laser processing peeling method, and laser water jet processing peeling method as in (A). Thereafter, as shown in FIG. 37B, after the seed substrate is separated, the single crystal Si layer (hydrogen ion implanted layer) 43, the thermal oxide film SiO ₂ 41a, and the peripheral portion of the surface of the support substrate are chamfered. Since chipping, cracking, and cracking of the ultra-thin SOI layer in the peripheral portion are prevented, yield and quality are improved, and cost reduction is realized. Further, if necessary, light etching may be performed with a hydrofluoric acid-based etchant to remove Si dust and micro cracks.

  The single-crystal Si substrate of the separated seed substrate 42 can be reused by performing surface re-polishing, etching, heat treatment in an atmosphere containing hydrogen, and the like, as necessary.

(4) Etching is performed by hydrogen annealing to obtain an ultra-thin SOI structure of the single-crystal Si layer 43 with high flatness.
If necessary, a part of the surface of the single-crystal Si layer 43 is etched with a hydrofluoric acid-based etchant, and further etched by hydrogen annealing to obtain a desired thickness and flatness of the single-crystal Si layer 43 having a thickness of, for example, 50 to 100 nm. A thin SOI structure is formed. Hydrogen annealing is performed at an etching rate of 0.0013 nm / min at 1050 ° C. and 0.0022 nm / min at 1100 ° C.
If necessary, a single crystal Si layer having a higher crystallinity and an arbitrary thickness may be laminated by Si epitaxial growth using the single crystal Si layer 43 etched by hydrogen annealing as a seed.

At this time, as in (A), Ge is grown on the surface of the single crystal Si substrate 42 as a seed substrate by Si epitaxial growth such as CVD so that the peeled hydrogen ion implanted layer (single crystal Si layer) 43 becomes a strain applying semiconductor layer. The single crystal Si layer 43 of the strain applying semiconductor layer may be formed as a SiGe layer having a concentration of 20 to 30%.
Then, the hydrogen ions may be implanted at a high concentration so as to have this thickness (depth) to form a hydrogen ion implanted layer (single crystal Si layer) 43.

  As a result, a display portion and a peripheral circuit of a MOSTFT that achieve a significant improvement in electron mobility of about 1.76 times as compared with the single crystal Si layer 43 of the conventional strain-free channel layer are realized, so that high performance and high definition are achieved. Thus, a high-quality ultra-thin electro-optical display device is realized.

At this time, the graded composition is such that the Ge concentration at the strained portion of the hydrogen ion implanted layer in the SiGe layer is a desired concentration, and the Ge concentration on the surface of the single crystal Si layer 43 that is the strain applying semiconductor layer after the separation of the seed substrate is equal to the desired concentration. Preferably, the single crystal Si layer 43 as the strain channel layer is formed by Si epitaxial growth using the single crystal Si layer 43 of the strain applying semiconductor layer, which is the SiGe layer having the gradient composition, as a seed.
That is, the single crystal Si layer 43 of the strain applying semiconductor layer has a gradient composition from the portion of the insulating layer in contact with the SiO ₂ film 41a, the Ge concentration gradually increases, and the surface concentration is, for example, a desired value of 20 to 30%. It is preferable that

(5) An LCD or an organic EL display unit and peripheral circuits are formed in the ultra-thin SOI structure single crystal Si layer 43 by a general-purpose technique to produce an ultra-thin SOI structure electro-optical display element substrate layer. The formation of the display element and the peripheral circuit is in accordance with (A).

  At this time, by forming a peripheral circuit or a display portion and a peripheral circuit having a multi-layer wiring structure on the single crystal semiconductor layer, an ultra-thin electro-optical display device with high integration, high definition, high performance, high quality and low cost can be obtained. Realize.

  Further, by forming a peripheral circuit also in the single crystal semiconductor layer in the seal region, the number of wafers to be taken per wafer due to shrinkage of the LCD panel size is increased, thereby realizing cost reduction.

  In addition, by forming not only a display portion but also a part of a peripheral circuit including a memory circuit on a single crystal semiconductor layer below a reflective electrode, the integration degree is increased to achieve high definition, high performance, high quality and ultra-thin ultra-thin. Type electro-optical display device is realized.

(6) A high concentration of hydrogen ions is implanted to a depth of 3 to 5 μm from the surface, and annealing treatment for peeling is performed to generate a strained layer 40b (see FIG. 31). Hydrogen ion implantation is performed at 300 to 500 keV and 5 × 10 ¹⁶ to 1 × 10 ¹⁷ atoms / cm ² .

At this time, in order to homogenize the high-concentration hydrogen ion implanted layer 37 in the single-crystal Si substrate and to prevent high-concentration hydrogen ion desorption in the same manner as in the above (3), the process is performed after the process step of 500 ° C. or more. A high concentration hydrogen ion implanted layer 40a is formed.
In addition, since electrodes, wirings, and the like cause variations in the depth of hydrogen ion implantation, it is preferable to form them before or after peeling annealing after the hydrogen ion implantation step.

  However, in the case of forming electrodes and wirings before the peeling annealing, while cooling the electro-optical display element substrate layer side via a UV tape by a fluid-cooled support jig, the back side of the support substrate (single-crystal Si substrate 10) is used. Stripping annealing by rapid heating and rapid cooling RTA, laser processing stripping method without stripping annealing, and laser water jet processing stripping method are preferable.

The peeling anneal conforms to the above (3). The groove 60 is formed by dry etching (plasma etching with SF ₆ , CF ₄ , Cl + O ₂ , HBr + O ₂ , reverse sputter etching, etc.), wet etching (HF + H ₂ O ₂ + H ₂ O mixed solution, HF + HNO ₃ + CH ₃ COOH) Single-crystal Si layer 43 having an arbitrary width by hydrofluoric acid-based etchant, alkali-based etchant, or the like of a mixed solution, or mechanical processing (cutting grooves by blade dicing, diamond cutter, cemented carbide cutter, ultrasonic cutter, or the like). It is desirable to form from the surface to at least the strained layer 40b of the hydrogen ion implanted layer. Thereby, separation from the strained layer 40b can be facilitated. Among them, in the case of dry etching or wet etching in which the etching selectivity between Si and an insulating film (SiO ₂ , Si ₃ N _4, etc.) is high, the distortion of the single crystal Si layer under the insulating film having an ultra-thin SOI structure. By promoting the side etching of the layer 40b, separation becomes easy.

  At this time, device constituent films such as a silicon oxide film and a silicon nitride film are present on the support substrate 40, and a hydrogen ion implanted layer 40a is formed under the insulating film 41a so as to penetrate them, and the strained layer 40b is formed by heat treatment. Generate. In addition, RTA of rapid heating and rapid cooling is preferable for the annealing for peeling. Particularly, if the flash lamp annealing is performed in a very short time (for example, Xe flash lamp annealing at about 1000 ° C. for several milliseconds), device characteristics are adversely affected. The strain layer 40b can be generated without giving.

After this, the transparent electrodes, wiring, external extraction electrodes (including bumps), etc. of the display section and peripheral circuits are formed. It is preferable to join or mount on a PCB (Printed Circuit Board).
When a bump such as solder is formed on the external extraction electrode, the bump height is preferably equal to or less than the thickness of the counter substrate.

(7) The process of assembling the LCD and the organic EL conforms to (B).

(8) In the case of an LCD, the support substrate 40 and the counter substrate 14 are covered with at least an antistatic UV tape 16 having no adhesive residue, and are peeled off from the strained layer 40b of the hydrogen ion implanted layer (FIG. 31 (single-crystal Si layer 43). (In the case where the insulating layer 41a (SiO ₂ ) is provided below) Then, UV curing is performed to remove the UV tape 16. The single-crystal Si substrate of the separated support substrate 40 is subjected to surface re-polishing, etching, and hydrogen if necessary. The hydrogen ion-implanted layer can be separated from the strained layer 40b by heat treatment in an atmosphere containing, for example. In addition, the laser processing peeling method or the laser water jet processing peeling method for the hydrogen ion implanted layer 40a without peeling annealing can be performed. It can also be.

In other words, high-concentration hydrogen ion-implanted by the local heating of the laser processing peeling method is thermally expanded while cooling the opposing substrate 14 side via the UV tape by the support jig which is fluid-cooled as needed, and the microbubbles are formed. The support substrate (single-crystal Si substrate) 40 may be separated by generating a strained layer 40b in the hydrogen ion-implanted layer 40a by the pressure action and the crystal rearrangement action.
In the laser water jet processing peeling method, since water for cooling is irradiated simultaneously with the laser, a support jig cooled by fluid is not necessarily required.

  Subsequent assembling steps of the reflection type LCD, the top emission type organic EL, the transmission type LCD, the semi-transmission type LCD or the bottom emission type organic EL are in accordance with (A). Although hydrogen ions are implanted in the present embodiment, a rare gas such as nitrogen or helium may be used instead.

  In addition, for example, hydrogen ion implantation is similar to (C) except for an ion implantation apparatus for mass-separating and scanning a hydrogen ion beam (the same as an ion implantation apparatus for implanting impurities such as boron and phosphorus into a Si substrate). A hydrogen negative ion beam implanter for generating a plasma containing hydrogen by the plasma generating means, extracting a hydrogen negative ion beam from the plasma, and implanting the hydrogen negative ions to a predetermined depth may be used.

(E) Porous Semiconductor Layer / Ion Implantation Layer Separation Method In the present embodiment, a porous semiconductor layer / ion implantation layer separation method using a porous Si layer and a hydrogen ion implantation layer (for ion-implantation on a seed semiconductor substrate) A method for manufacturing an ultra-thin electro-optical display device by separating a seed semiconductor substrate from an injection layer and separating a supporting semiconductor substrate from a porous semiconductor layer formed on the supporting semiconductor substrate) will be described. 32 to 34 are manufacturing process diagrams of an ultra-thin electro-optical display device using a porous Si layer / hydrogen ion implanted layer separation method according to an embodiment of the present invention.

(1) Hydrogen ions are implanted at a high concentration into a seed substrate 50 having a diameter of, for example, 12 inches and a thickness of 1.2 mm to form a hydrogen ion implanted layer 51. Note that hydrogen ions are implanted at a depth of about 1 μm at a dose of about 100 keV and 5 × 10 ¹⁶ to 1 × 10 ¹⁷ atoms / cm ² (see FIG. 32). The formation method conforms to (C).

(2) For example, a low-porous Si layer 53, a high-porous Si layer 54, and a low-porous Si layer 55 are formed on a support substrate 52 having a diameter of 12 inches and a thickness of 1.2 mm by anodization. A layer 56 is formed, and an insulating layer 57 made of a SiO ₂ oxide film or a laminated film of SiO ₂ , Si ₃ N ₄ and SiO ₂ is formed (see FIG. 32). The formation method conforms to (A).

(3) The seed substrate 50 and the support substrate 52 are bonded together (see FIG. 33).
At room temperature, the surfaces of the hydrogen ion implanted layer 51 of the seed substrate 50 and the surface of the insulating layer 57 of the support substrate 52 are brought into contact with each other and bonded by Van der Waals force. Thereafter, a heat treatment is performed at 400 ° C. for 30 minutes for covalent bonding to strengthen the bonding. The heat treatment at this time needs to be set at a treatment temperature and a treatment time lower than the hydrogen ion desorption temperature, and the heat treatment method is in accordance with (B).

(4) The ion-implanted high-concentration hydrogen is thermally expanded by peeling annealing, and a strain layer 58 is generated in the hydrogen ion-implanted layer 51 by a pressure action and a crystal rearrangement action in the microbubbles. Then, the UV tape 45 is bonded to both the seed substrate 50 and the support substrate 52, and the seed substrate 50 is pulled and separated (see FIG. 34). At this time, it is important to adjust the porosity and thickness so as not to peel off from the highly porous Si layer 54. The peeling anneal conforms to (C).

  At this time, as shown in FIG. 37C, after the seed substrate is separated, a single-crystal Si layer (hydrogen ion implanted layer) 51, an insulating layer 57, a single-crystal Si layer 56, a low-porosity Si layer 55, a high-porosity Si layer The peripheral portion of the surface of the Si layer 54, the low-porous Si layer 53, and the support substrate 52 is chamfered to prevent chipping, cracking, and cracking of the ultra-thin SOI layer in the peripheral portion. And the cost is reduced. Further, if necessary, light etching may be performed with a hydrofluoric acid-based etchant to remove Si dust and microcracks.

  If necessary, the hydrogen ion implanted layer 51 generated by the strained layer 58 may be peeled by jetting a high-pressure fluid jet, or the hydrogen ion implanted layer 51 without annealing for peeling may be peeled by laser processing or laser water jet processing. In addition, the porosity and thickness conditions of the highly porous Si layer 54 formed on the supporting substrate can be reduced.

In other words, the high-concentration hydrogen ion-implanted by the local heating of the laser processing exfoliation method is thermally expanded while cooling the opposing substrate 14 side via the UV tape by the support jig which is fluid-cooled as needed, and the microbubbles are formed. The support substrate (single-crystal Si substrate) 52 may be separated by generating a strained layer 58 in the hydrogen ion implanted layer 51 by the pressure action and the crystal rearrangement action of.
In the laser water jet processing peeling method, since water for cooling is irradiated simultaneously with the laser, a support jig cooled by fluid is not necessarily required.

(5) If necessary, a part of the surface of the single-crystal Si layer 51 peeled off with a hydrofluoric acid-based etchant is etched, and further etched by hydrogen annealing to obtain a single layer having a desired thickness and high flatness, for example, 50 to 100 nm. An ultra-thin SOI structure of the crystalline Si layer 51 is formed. The hydrogen annealing is performed at an etching rate of 0.0013 nm / min at 1050 ° C. and 0.0022 nm / min at 1100 ° C., for example.
If necessary, a single crystal Si layer having a higher crystallinity and an arbitrary thickness may be stacked by Si epitaxial growth using the single crystal Si layer 51 etched by hydrogen annealing as a seed.

At this time, similarly to (A), Ge is grown by Si epitaxial growth such as CVD on the surface of the single crystal Si substrate 50 as a seed substrate so that the peeled hydrogen ion implanted layer (single crystal Si layer) 51 becomes a strain applying semiconductor layer. The single crystal Si layer 51 of the strain applying semiconductor layer may be formed as a SiGe layer having a concentration of 20 to 30%, and the single crystal Si layer 51 of the strain channel layer may be formed by Si epitaxial growth using the single crystal Si layer 51 as a seed. .
Then, the hydrogen ions may be implanted at a high concentration so as to have this thickness (depth) to form a hydrogen ion implanted layer (single-crystal Si layer) 51.

  As a result, a MOSTFT display portion and a peripheral circuit that achieve a significant improvement in electron mobility of about 1.76 times as compared with the single crystal Si layer 51 of the conventional strain-free channel layer can be realized, so that high performance and high definition can be achieved. Thus, a high-quality ultra-thin electro-optical display device is realized.

At this time, the Ge concentration in the strained portion of the hydrogen ion implanted layer in the SiGe layer is set to a gradient composition such that the Ge concentration becomes a desired concentration. Preferably, the concentration is set to a desired concentration, and the single crystal Si layer 43 as a strain channel layer is formed by Si epitaxial growth using the single crystal Si layer 43 as the strain applying semiconductor layer of the SiGe layer having the gradient composition as a seed.
In other words, the single crystal Si layer 51 of the strain applying semiconductor layer has a gradient composition from the portion in contact with the insulating layer 57 so that the Ge concentration gradually increases and the surface concentration becomes a desired value of, for example, 20 to 30% Ge concentration. Is preferred.

(6) An LCD or an organic EL display element and a peripheral circuit are formed in the ultra-thin SOI structure single crystal Si layer 51 by a general-purpose technique to produce an ultra-thin SOI structure electro-optical display element substrate layer. The formation of the display element and the peripheral circuit is in accordance with (A).
When a bump such as solder is formed on the external extraction electrode, the bump height is preferably equal to or less than the thickness of the counter substrate.

  At this time, by forming a peripheral circuit or a display portion and a peripheral circuit having a multi-layer wiring structure on the single crystal semiconductor layer, an ultra-thin electro-optical display device with high integration, high definition, high performance, high quality and low cost can be obtained. Realize.

  Further, by forming a peripheral circuit also in the single crystal semiconductor layer in the seal region, the number of wafers to be taken per wafer due to shrinkage of the LCD panel size is increased, thereby realizing cost reduction.

  In addition, by forming not only a display portion but also a part of a peripheral circuit including a memory circuit on a single crystal semiconductor layer below a reflective electrode, the integration degree is increased to achieve high definition, high performance, high quality and ultra-thin ultra-thin. Type electro-optical display device is realized.

The groove 60 is formed by dry etching (plasma etching with SF ₆ , CF ₄ , Cl + O ₂ , HBr + O ₂ , reverse sputter etching, etc.), wet etching (HF + H ₂ O ₂ + H ₂ O mixed solution, HF + HNO ₃ + CH ₃ COOH). Single-crystal Si layer 51 having an arbitrary width by hydrofluoric acid-based etchant, alkali-based etchant, or the like of a mixed solution, or mechanical processing (cutting groove by blade dicing, diamond cutter, cemented carbide cutter, ultrasonic cutter, or the like). It is preferable to form at least the highly porous Si layer 54 from the surface. Thereby, separation from the strained layer 58 can be easily performed. Among them, in the case of dry etching or wet etching having a high etching selectivity between Si and an insulating film (SiO ₂ , Si ₃ N _4, etc.), particularly a porous Si layer under an insulating film having an ultra-thin SOI structure is formed. By promoting the etching, separation becomes easier.

  Subsequent assembling steps of the reflection type LCD, the top emission type organic EL, the transmission type LCD, the semi-transmission type LCD, and the bottom emission type organic EL conform to (A).

  In the above-mentioned transmissive LCD, semi-transmissive LCD and bottom emission organic EL, the pixel opening of the display portion of the electro-optic display element substrate (single crystal Si layer 12) having a thickness with insufficient light transmittance is etched and light is emitted. An example is shown in which a transparent material is embedded and a surface flattening process is performed. On the other hand, in the case of an electro-optical display element substrate having an ultra-thin single-crystal Si layer 12 having a thickness of, for example, 10 to 50 nm, the light transmittance of the pixel opening is sufficient for some applications. Layer 12 need not necessarily be etched.

  In particular, in the case of an electro-optical display element substrate having an ultra-thin SOI structure having a thickness of 10 to 50 nm, for example, a single-crystal Si layer, the insulating film serving as an etching stopper serves as an underlying single-crystal Si layer, a low-porosity Si layer, and a high-porosity Si layer. The transmissive LCD, the transflective LCD and the bottom emission with appropriate transmittance, without etching the transparent Si layer and without etching the single crystal Si layer in the pixel opening without embedding the light transmissive material and flattening the surface. It becomes possible to obtain a type organic EL. As a result, costs can be reduced by reducing man-hours.

  Note that, in the present embodiment, an example in which hydrogen is used as ions to be implanted at a high concentration is described. However, ions to be implanted are not limited to this, and ions such as a rare gas such as nitrogen and helium are used. Can also be used.

  In addition, for example, hydrogen ion implantation is the same as (C) except for an ion implantation apparatus for mass-separating and scanning a hydrogen ion beam (the same as an ion implantation apparatus for implanting impurities such as boron and phosphorus into a Si substrate). A hydrogen negative ion beam implanter for generating a plasma containing hydrogen by the plasma generating means, extracting a hydrogen negative ion beam from the plasma, and implanting the hydrogen negative ions to a predetermined depth may be used.

  In addition, instead of the single-crystal Si substrate, a single-crystal SiGe substrate, and further using a single-crystal compound semiconductor substrate such as a SiC substrate, a GaAs substrate, or an InP substrate, a reflection type LCD, a semi-transmission type LCD, a top emission type organic EL, An ultra-thin electro-optical display device such as a transmission type LCD and a bottom emission type organic EL can be manufactured.

(F) In the above (A) to (E), an example in which the TFT substrate subjected to the alignment treatment and the opposing substrate are superposed on each other in the substrate state (surface), that is, by so-called surface liquid crystal assembly, is mainly described. As described above, it is also possible to perform so-called single-panel liquid crystal assembly, which superimposes non-defective chips (single) on an opposite substrate that has been subjected to alignment processing on non-defective chips in a TFT substrate (plane) that has been subjected to alignment processing. is there.

In addition, another good chip (single) that has been subjected to alignment treatment and the like on the opposing substrate (surface) is superimposed on the good chip (single) that has been cut by performing alignment processing and the like on the TFT substrate (surface). It is also possible to carry out by a single liquid crystal assembly.
In this case, a good chip (single) of the TFT substrate and a good chip (single) of the counter substrate are overlapped and sealed, and then the support substrate is separated, and a transparent or opaque support chip is attached with a transparent or opaque adhesive. It is preferable to combine them.

Alternatively, a non-defective chip (single) that has been subjected to an orientation process or the like after cutting the TFT substrate (surface) is superimposed on a non-defective chip (single) that has been subjected to an orientation process after cutting the opposing substrate (surface). It is also possible to carry out by assembling a single liquid crystal.
At this time, the non-defective chip (single) of the TFT substrate and the non-defective chip (single) of the counter substrate are overlapped and sealed, and then the support substrate is separated, and a transparent or opaque support chip is attached with a transparent or opaque adhesive. It is preferable to combine them.
At this time, it is needless to say that liquid crystal injection and sealing are performed before the separation of the support substrate or after the separation of the support substrate in another plane single liquid crystal assembly and a single single liquid crystal assembly.

  Hereinafter, a reflection type LCD, a transmission type LCD, a semi-transmission type LCD, a top emission type organic EL and a bottom emission type organic EL are assembled from the electro-optical display element substrate formed by each of the above methods (A) to (E). Each of the typical methods will be described.

(Reflective LCD)
After forming a display portion and a peripheral circuit portion on the single crystal semiconductor substrate layer formed by the above (A) to (E), an alignment film is formed and alignment processing is performed to form an electro-optical display element substrate layer, and a transparent electrode is formed. After overlapping and sealing the counter substrate with alignment film formation and alignment treatment through a predetermined liquid crystal gap, the support substrate is separated from the separation layer such as the porous layer or the strained part of the ion-implanted layer, and the ultra-thin electro-optic A display element substrate is formed. Thereafter, the support is bonded with an adhesive, and the liquid crystal is injected and sealed after cutting and dividing into each ultra-thin electro-optical display device. Alternatively, an opaque support chip is attached to a non-defective chip in the ultra-thin electro-optical display element substrate after separation with an adhesive, and the liquid crystal is injected and sealed after cutting and dividing.

  Alternatively, a display portion and a peripheral circuit portion are formed on the single crystal semiconductor substrate layer formed by the above (A) to (E) to form an electro-optic display element substrate layer, the surface is protected with a UV tape, and a separation layer is formed. The support substrate is separated to form an ultra-thin electro-optical display element substrate, and the support is attached with an adhesive to form an electro-optical display element substrate. Thereafter, in the case of the plane liquid crystal assembling method, an alignment film is formed on this electro-optical display element substrate and subjected to an alignment process, and a transparent electrode is formed, and the alignment substrate is formed and aligned. After sealing and cutting and dividing, liquid crystal injection sealing is performed.

  In the case of a plane single liquid crystal assembling method, a non-defective chip of a counter substrate which is formed by forming a transparent electrode and forming an alignment film, and performing alignment processing, is cut into an ultra-thin electro-optical display element substrate having an alignment film formed and alignment processed. A non-defective chip is overlapped and sealed with a predetermined liquid crystal gap, sealed by liquid crystal injection, and then cut and divided. Alternatively, in the case of another plane single liquid crystal assembling method, a non-defective chip of the opposite substrate formed by forming a transparent electrode and forming an alignment film and performing alignment processing is cut, and an electro-optical display element substrate obtained by forming an alignment film and performing alignment processing and cutting is performed. The non-defective chip is overlapped with a predetermined liquid crystal gap and sealed. Thereafter, the support substrate is separated from a separation layer such as a porous layer or a strained portion of the ion implantation layer, and an opaque support chip is bonded with an adhesive.

(Transmissive LCD)
After forming a display portion and a peripheral circuit portion on the single crystal semiconductor substrate layer formed by the above (A) to (E) to form an electro-optic display element substrate layer, a pixel material of the display portion is etched to form a transparent material. A transparent electrode connected to the drain of the TFT is formed thereon, and an alignment film is formed thereon and subjected to an alignment process. After overlapping and sealing, the support substrate is separated from the separation layer to form an ultra-thin electro-optical display element substrate. Thereafter, a transparent support is attached with a transparent adhesive, and after cutting and dividing, liquid crystal is injected and sealed. Alternatively, a non-defective chip in a transparent support is bonded to a non-defective chip in the ultra-thin electro-optical display element substrate after separation with a transparent adhesive, and the liquid crystal is injected and sealed after cutting and dividing.

  Alternatively, a display portion and a peripheral circuit portion are formed on the single crystal semiconductor substrate layer formed by the above (A) to (E) to form an electro-optic display element substrate layer, the surface is protected with a UV tape, and a separation layer is formed. The support substrate is separated to form an ultra-thin electro-optical display element substrate, and a transparent support is attached with a transparent adhesive to form an electro-optical display element substrate. After that, in the case of the plane liquid crystal assembly method, the pixel opening of the display portion of the electro-optical display element substrate is etched and buried with a transparent material to flatten the surface, and after forming a transparent electrode connected to the drain of the TFT, the alignment film is formed. After forming and aligning, a counter electrode on which a transparent electrode is formed and an alignment film is formed and aligned is superposed and sealed at a predetermined liquid crystal gap.

  In addition, in the case of the plane single liquid crystal assembling method, a non-defective chip of the opposite substrate which is formed by forming a transparent electrode and forming an alignment film and aligning and processing is buried with a transparent material by etching a pixel opening portion of a display portion and flattening the surface. A transparent electrode connected to the drain of the TFT is formed, an alignment film is formed, and a non-defective chip in the electro-optic display element substrate on which alignment processing is performed is overlapped with a predetermined liquid crystal gap and sealed, and then liquid crystal injection sealing is performed. The support substrate is separated from the substrate, and the transparent support is bonded with a transparent adhesive, and then cut and divided. Alternatively, in the case of another plane single liquid crystal assembling method, a non-defective chip of the opposite substrate formed by forming a transparent electrode and forming an alignment film, and performing alignment treatment, is etched with a transparent material by etching a pixel opening of a display unit. After flattening, forming a transparent electrode connected to the drain of the TFT, forming an alignment film, aligning and cutting the non-defective chip of the electro-optical display element substrate at a predetermined liquid crystal gap, and then sealing the liquid crystal. Then, the support substrate is separated from the separation layer, and the transparent support is bonded with a transparent adhesive.

(Semi-transmissive LCD)
After forming a display portion and a peripheral circuit portion on the single crystal semiconductor substrate layer formed by the above (A) to (E) to form an electro-optic display element substrate layer, a pixel material of the display portion is etched to form a transparent material. Is embedded to form a flat surface, and a pixel electrode having two regions of a reflective electrode and a transparent electrode having an appropriate uneven shape connected to the drain of the TFT is formed thereon, and an alignment film is formed thereon and an alignment process is performed to form a transparent electrode. After overlapping and sealing with a predetermined liquid crystal gap on the counter substrate on which the alignment film is formed and subjected to the alignment treatment, the support substrate is separated from the separation layer to form an ultra-thin electro-optical display element substrate. Thereafter, a transparent support is attached with a transparent adhesive, and after cutting and dividing, liquid crystal is injected and sealed. Alternatively, a transparent support chip is bonded to a good chip in the separated electro-optical display element substrate with a transparent adhesive, and the liquid crystal is injected and sealed after cutting and dividing.

  Alternatively, a display portion and a peripheral circuit portion are formed on the single crystal semiconductor substrate layer formed by the above (A) to (E) to form an electro-optic display element substrate layer, the surface is protected with a UV tape, and a separation layer is formed. The support substrate is separated to form an ultra-thin electro-optical display element substrate, and a transparent support is attached with a transparent adhesive to form an electro-optical display element substrate. Thereafter, in the case of the surface liquid crystal assembling method, the pixel opening of the display portion of the electro-optical display element substrate is etched and buried with a transparent material to flatten the surface, and a reflection electrode having an appropriate uneven shape connected to the drain of the TFT and After forming a pixel electrode having two regions of a transparent electrode, an alignment film is formed and an alignment process is performed, and a transparent substrate is formed, an alignment film is formed and an alignment process is performed. The liquid crystal is injected and sealed later.

  In addition, in the case of the plane single liquid crystal assembling method, a non-defective chip of the opposite substrate which is formed by forming a transparent electrode and forming an alignment film and aligning and processing is buried with a transparent material by etching a pixel opening portion of a display portion and flattening the surface. A non-defective chip in an electro-optical display element substrate formed with an alignment film after forming a pixel electrode having two regions of a moderately uneven reflective electrode and a transparent electrode connected to the drain of the TFT, and a predetermined liquid crystal gap. Then, the liquid crystal is injected and sealed, the support substrate is separated from the separation layer, the transparent support is bonded with a transparent adhesive, and then cut and divided.

  Alternatively, in the case of another plane single liquid crystal assembling method, a non-defective chip of the opposite substrate formed by forming a transparent electrode and forming an alignment film, and performing alignment treatment, is etched with a transparent material by etching a pixel opening of a display unit. A non-defective chip of an electro-optical display element substrate which is flattened and formed by forming a pixel electrode having two regions of a moderately uneven reflective electrode and a transparent electrode connected to the drain of the TFT, and then forming and orienting an alignment film, and cutting; After overlapping and sealing with a predetermined liquid crystal gap, liquid crystal injection and sealing are performed. Thereafter, the support substrate is separated from the separation layer, and the transparent support is bonded with a transparent adhesive.

(Top-emitting organic EL)
A display portion and a peripheral circuit portion are formed on the single crystal semiconductor substrate layer formed by the above (A) to (E) to form an electro-optical display element substrate layer. Here, the display unit covers an organic EL light emitting layer of red, blue, green or the like for each pixel on a cathode (Li-AL, Mg-Ag, etc.) connected to the drain of the current driving MOSTFT of each pixel. Then, an anode (ITO film or the like) is formed on the upper portion, an anode is formed on the entire surface as needed, and a structure is formed in which the entire surface is covered with a moisture-resistant transparent resin. Then, the support substrate is separated from the separation layer to form an ultra-thin electro-optical display element substrate. Thereafter, a support substrate is attached to the ultra-thin electro-optical display element substrate with an adhesive and cut and divided. Alternatively, a non-defective chip in the ultra-thin electro-optical display element substrate is bonded to a non-defective chip of the support substrate with an adhesive and cut and divided.

  Alternatively, a display portion and a peripheral circuit portion are formed on the single crystal semiconductor substrate layer formed by the above (A) to (E) to form an electro-optic display element substrate layer, the surface is protected with a UV tape, and a separation layer is formed. The support substrate is separated to form an ultra-thin electro-optical display element substrate, and the support is attached with an adhesive to form an electro-optical display element substrate. Here, the display unit is provided with an organic EL light emitting layer of red, blue, green or the like for each pixel on a cathode (Li-AL, Mg-Ag, etc.) connected to the drain of the current driving TFT of each pixel. Then, an anode (ITO film or the like) is formed on the upper portion, an anode is formed on the entire surface as needed, and a structure is formed in which the entire surface is covered with a moisture-resistant transparent resin. After that, it is cut and divided.

(Bottom-emitting organic EL)
After forming a display portion and a peripheral circuit portion on the single crystal semiconductor substrate layer formed by the above (A) to (E) to form an electro-optic display element substrate layer, a pixel material of the display portion is etched to form a transparent material. To make the embedded surface flat. An anode (ITO film, etc.) connected to the source of the current driving MOSTFT of each pixel is formed thereon, and an organic EL light emitting layer of red, blue, green or the like is deposited for each pixel, and a cathode is formed on the upper portion thereof. (Li-AL, Mg-Ag, etc.), a cathode is formed on the entire surface as needed, and a structure is formed on the entire surface covered with a moisture-resistant resin. Then, the support substrate is separated from the separation layer to form an ultra-thin electro-optical display element substrate. Thereafter, a transparent support substrate is attached with a transparent adhesive and cut and divided. Alternatively, a non-defective chip in the ultra-thin electro-optical display element substrate is bonded to a non-defective chip of a transparent support with a transparent adhesive and cut and divided.

  Alternatively, a display portion and a peripheral circuit portion are formed on the single crystal semiconductor substrate layer formed by the above (A) to (E) to form an electro-optic display element substrate layer, the surface is protected with a UV tape, and a separation layer is formed. The support substrate is separated to form an ultra-thin electro-optical display element substrate, and a transparent support is attached with a transparent adhesive to form an electro-optical display element substrate. The pixel openings in the display section of the electro-optic display element substrate are etched and buried with a transparent material to flatten the surface. An anode (ITO film or the like) connected to the source of the current driving TFT for each pixel is formed thereon, and an organic EL light emitting layer of red, blue, green, or the like is deposited for each pixel. A cathode (Li-AL, Mg-Ag, etc.) is formed, a cathode is formed on the entire surface as needed, and a structure is formed in which the entire surface is covered with a moisture-resistant resin. After that, it is cut and divided.

The above assembling methods are shown in FIGS. 38 to 42 according to the separation methods (A) to (E). 38A shows a method of assembling an LCD and an organic EL by the porous semiconductor layer separation method shown in FIG. 38A, FIG. 39B shows a method of assembling the LCD and the organic EL by the double porous semiconductor layer separation method shown in FIG. (C) Method of assembling LCD and organic EL by ion implantation layer separation method, FIG. 41 (D) Method of assembling LCD and organic EL by double ion implantation layer separation method, FIG. 42 (E) Porous semiconductor 1 shows a method of assembling an LCD and an organic EL by a layer / ion implantation layer separation method.
Here, the surface liquid crystal assembly is abbreviated as the surface assembly and the surface single liquid crystal assembly is abbreviated as the surface single assembly.
It goes without saying that various other assembling methods can be implemented by applying the above assembling method.

  In FIGS. 38 to 42, the TFT substrate layer is an electro-optical display element layer. The above-described example of LCD assembly is basically performed by superposing an ultra-thin electro-optical display element substrate layer of a single crystal semiconductor layer and an opposing substrate, sealing the substrate, separating the support substrate from the separation layer, and forming an ultra-thin electro-optical display. This is a method in which the element substrate is bonded to a support or a support chip, and liquid crystal injection and sealing are performed after cutting and dividing. After overlaying and sealing non-defective chips on the substrate and injecting and sealing the liquid crystal, the support substrate is separated from the separation layer, and cut and divided after bonding the ultra-thin electro-optical display element substrate to the support or the support chip. It shows that the method may be used.

  FIG. 43 shows a microlens array formed of a high-refractive-index material, for example, a high-refractive-index transparent resin, on a counter substrate and a transparent support substrate. An embodiment of a transmissive LCD for a projector having a so-called dual microlens (also referred to as a double microlens) structure in which an ultra-thin electro-optical display element substrate having a high-precision film thickness is sandwiched between transparent supporting substrates having a functioning microlens. ing. Needless to say, the microlens array may be formed of an inorganic high refractive index transparent film.

As a specific example of this implementation, for example, as shown in FIG.
[1] A microlens array is formed on a quartz glass substrate of the counter substrate 14 by general-purpose lithography and etching. At this time, a reflective film made of aluminum or the like is formed around the micro-lens array corresponding to the display element region of the ultra-thin electro-optical display element substrate and the pixel opening to reflect unnecessary portions of strong incident light, and to the liquid crystal. It is preferable to increase the contrast and improve the image quality by reducing the light-shielding effect, and to reduce the temperature rise of the liquid crystal to extend the life of the LCD.
[2] A high refractive index transparent resin 27 is filled, and a transparent glass substrate 29 is bonded with a transparent adhesive 25. At this time, the transparent glass substrate 29 may be bonded to the counter substrate 14 with the high refractive index transparent resin 27, and the transparent adhesive 25 may not be used.
[3] A counter substrate with a microlens array covered with a transparent glass substrate 29 (stack thickness) of about 20 μm is formed by single-side polishing or double-side polishing.
[4] A counter substrate with a microlens array on which a transparent electrode 14a and an alignment film 14b are formed and subjected to alignment treatment, and a pixel opening of a display unit is etched to bury a light-transmitting material 23 to flatten the surface and connect to a display element The transparent electrode 13c and the alignment film 13b are formed and superposed on the ultra-thin electro-optical display element substrate layer which has been subjected to the alignment treatment and sealed. Thereafter, a transmission type LCD having a single microlens structure in which liquid crystal is injected and sealed is produced.
[5] separating the support substrate from the strain of the ultra-slim electrooptic display porous layer under the element substrate layer or ion implantation layer, a peel remaining is removed by chemical etching as needed, SiO ₂ layer 104, The light transmitting material 23 is exposed through the SiO ₂ layer 105.
[6] A transparent support substrate with a microlens array covered with, for example, a transparent glass substrate 29 (stack thickness) of about 20 μm manufactured in the same manner as in 3 above is bonded to this ultra-thin electro-optical display element substrate layer with a transparent adhesive. Thus, a transmission type LCD having a dual microlens structure is obtained.

At this time, not only the formation of the light-shielding film on the single crystal Si layer and the side surface of the display element portion, but also a reflection film on the incident side and a low-reflection light-shielding film on the emission side around the microlens array corresponding to this display element portion. If it is formed, TFT leakage current due to strong incident light leakage from a projector or the like can be prevented, and higher luminance, image quality and longer life can be achieved.
Conventionally, an ultra-thin electro-optical display element substrate of, for example, about 20 μm is manufactured by optically polishing and chemically etching the back surface of the electro-optical display element substrate which is superimposed on a counter substrate with a micro-lens array. A transparent support substrate was bonded with a transparent adhesive to obtain a transmissive LCD having a dual microlens structure. However, it was difficult to obtain the precision of optical polishing, and it was difficult to obtain a desired high brightness as designed. .

  However, according to each separation method of the present invention, a microlens array functioning as a field lens is formed on an ultra-thin electro-optical display element substrate layer having a high-precision film thickness formed by superposing a counter substrate formed with a microlens array functioning as a condensing lens. By bonding the transparent support substrate for forming the lens array, the light can be condensed by the double microlens function, which is more accurate than the conventional dual microlens structure, and the light source light use efficiency can be increased. A transmission type LCD for a projector having a dual microlens structure with high brightness, high definition, and long life can be realized.

Furthermore, on the ultra-thin electro-optical display element substrate layer of high precision film thickness, which is formed by superimposing a reflective film-forming counter substrate around the micro lens array functioning as a condenser lens, and around the micro lens array functioning as a field lens. By bonding a transparent support substrate with a low-reflection light-shielding film, the light is condensed by a high-precision double microlens function to improve the light use efficiency of the light from the light source, and unnecessary incident light and reflected light are removed. A high-brightness, high-contrast, high-definition, long-life transmissive LCD for a projector having a dual microlens structure can be realized.
This dual microlens structure can increase the effective aperture ratio of the pixel to the maximum.

FIG. 44 shows a mounting example of a transmissive LCD and a reflective LCD for a projector.
FIG. 44 (a) shows an example of mounting a transmission type LCD for a projector, in which an ultra-thin electro-optical display element substrate layer and a counter substrate 14 are overlapped and sealed to inject and seal a liquid crystal, and the support substrate is separated and then transparent. A flexible substrate 107 is attached to an external extraction electrode 106 of an LCD panel composed of an ultra-thin electro-optical display element substrate in which a support substrate 22 is bonded with a transparent adhesive 17a. Then, the dust-proof glass with low-reflection film 108 is bonded to the incident-side counter substrate with a transparent adhesive, and the dust-proof glass with low-reflection film is bonded to the emission-side transparent support substrate with a transparent adhesive. Then, it is fixed to the aluminum metal frame 109 which has been subjected to the alumite blackening treatment with the high heat conductive mold resin 110. After that, the parting plate 111 is attached to the incident side.

  FIG. 44 (b) shows an example of mounting a reflective LCD for a projector, in which an ultra-thin electro-optical display element substrate layer and a counter substrate 14 are overlapped and sealed to inject and seal a liquid crystal. A flexible substrate 107 is attached to an external extraction electrode 106 of an LCD panel made of an ultra-thin electro-optical display element substrate in which a support substrate 18 is bonded with a high thermal conductive and conductive adhesive 17. Then, a dust-proof glass 108 with a low-reflection film is attached to the opposite substrate on the incident side with a transparent adhesive, and is fixed to an aluminum metal frame 109 that has been anodized with a high thermal conductive mold resin 110. After that, the parting plate 111 is attached to the incident side.

By the way, at least as a dustproof glass on the incident side, a high thermal conductivity glass having a thermal conductivity of 1 (W / m · K) or more that satisfies optical characteristics, such as quartz glass, transparent crystallized glass (neoceram, clear serum, zerodur, etc.), Further, a thermally conductive glass such as highly translucent ceramic polycrystal ｛electrode fused MgO, sintered MgO, Y ₂ O ₃ , Gd ₂ O ₃ , CaO (calcia), AL ₂ O ₃ (sapphire ), BeO (beryllia), ZrO ₂ , PbO, TiO ₂ , polycrystalline sapphire, or a double oxide crystal of YAG (Yttrium Aluminum Garnet), MgAl ₂ O ₄ (spinel; 71.8 Al ₂ O ₃ , 28. _{2MgO), LiNbO 3, BaTiO 3} , SBN75GGG, Bi 12 GeO 20, SrTiO 2, 3Al 2 O 3 · 2SiO 2, A _{2 O 3 · SiO 2, CaCO} 2, ZrSiO 4, (Pb, La) (Zr, Ti) , etc. _{O 3},} CaF ₂ (calcium fluoride), CVD diamond film coated high light-ceramic polycrystalline When the body, transparent crystallized glass, quartz, and the like are bonded together with a transparent adhesive, thermal cooling is promoted, and a high-luminance transmissive LCD and a reflective LCD for a projector are realized.
For example, the material configuration of a counter substrate of a high thermal conductive glass formed with a low reflective film from the incident side, a liquid crystal, an ultra-thin electro-optical display element substrate, and a transparent support substrate of a high thermal conductive glass, or a high thermal conductivity formed of a low reflective film Opposite substrate (including microlens substrate, black mask substrate, etc.) of glass dust-proof glass and high thermal conductive glass, liquid crystal, ultra-thin electro-optical display element substrate, transparent support substrate of high thermal conductive glass and low reflection film With the material configuration of the dustproof glass of the high heat conductive glass described above, thermal cooling is promoted and a transmissive LCD for a projector with high brightness is realized.
Further, for example, the material configuration of the counter substrate of high thermal conductive glass formed with a low reflection film from the incident side, the liquid crystal, the ultra-thin electro-optical display element substrate, and the metal support substrate, or dustproof glass of high thermal conductive glass formed with a low reflection film And a high thermal conductive glass opposing substrate (including a black mask substrate), a liquid crystal, an ultra-thin electro-optical display element substrate, and a metal supporting substrate. LCD is realized.

FIG. 45 shows a mounting example using the ultra-thin electro-optical display device for direct viewing according to the present invention.
(A) In the case of an ultra-thin transmissive or semi-transmissive LCD for direct viewing A light diffusion plate 121 for preventing light unevenness is adhered to the surface of a backlight module 120 having a built-in backlight with a transparent adhesive. An ultra-thin transmissive or semi-transmissive LCD 123 in which a polarizing plate 122 is directly bonded to a counter substrate with a transparent adhesive and a polarizing plate is directly bonded to the back surface of the transparent support substrate with a transparent adhesive is used as a light diffusing plate with a transparent adhesive. To form a transmissive or transflective LCD module. Then, it is set at a predetermined position on a PCB (Printed Circuit Board) 125, and the wiring bump electrode 126 of the PCB is joined to the external extraction bump electrode 127 of the ultra-thin transmissive or semi-transmissive LCD, and is used for backlight. After connecting the wiring 128 to the wiring bump electrode 126 of the PCB, it is fixed with a mold resin.
(B) In the case of an ultra-thin reflective LCD for direct viewing An ultra-thin reflective LCD 129 in which a polarizing plate 122 is directly adhered to a counter substrate with a transparent adhesive is set at a predetermined position on a PCB 125, and a bump for taking out the LCD is provided. After bonding the electrode 127 and the bump electrode 126 for wiring of the PCB, it is fixed with a mold resin.
(C) In the case of an ultra-thin bottom-emitting organic EL for direct viewing The moisture-resistant resin side of the ultra-thin bottom-emitting organic EL 130 is set at a predetermined position on the PCB 125, and the external extraction bump electrode 127 and the wiring of the PCB After bonding the bump electrodes 126 for use, the resin is fixed to the mold resin.
(D) In the case of an ultra-thin top-emitting organic EL for direct viewing The transparent resin side of the ultra-thin top-emitting organic EL 131 is set at a predetermined position on the PCB 125, and the external extraction bump electrode 127 and the wiring for the PCB are provided. After the bump electrodes 126 are joined, they are fixed with a mold resin.

Further, FIG. 46 shows a specific example of an ultra-thin electronic product using the present invention.
In the case of a business card or a cash card type ultra-thin mobile phone (voice input type), the ultra-thin electro-optical display device 133 of the present invention, for example, a reflective LCD for direct viewing, and the ultra-thin applying the present invention are provided on the surface of the multilayer PCB 132. MOS LSI 134 (DSP circuit, CPU circuit, video and audio memory circuit, video signal processing circuit, image quality correction circuit, audio signal processing circuit, audio correction circuit, etc.), ultra-thin CCD 135 and ultra-thin microphone 136 to which the present invention is applied. , An ultra-thin speaker 137, an antenna 138, and the like are mounted, and a lithium-ion polymer battery pack 139 with a built-in power supply circuit is mounted on the back surface thereof, and the multilayer PCB is connected with appropriate wiring and through holes.

It is sectional drawing which shows the manufacturing process of the electro-optical display device by a porous Si layer separation method. It is sectional drawing which shows the manufacturing process of the electro-optical display device by a porous Si layer separation method. It is sectional drawing which shows the manufacturing process of the electro-optical display device by a porous Si layer separation method. It is sectional drawing which shows the manufacturing process of a reflective LCD by a porous Si layer separation method. It is sectional drawing which shows the manufacturing process of a reflective LCD by a porous Si layer separation method. It is sectional drawing which shows the reflection type LCD produced by the porous Si layer separation method. It is sectional drawing which shows the manufacturing process of the top emission type organic EL by a porous Si layer separation method. It is sectional drawing which shows the top emission type organic EL produced by the porous Si layer separation method. It is sectional drawing of the display part which shows the manufacturing process of a transmissive LCD, a transflective LCD, or a bottom emission organic EL. It is sectional drawing of the display part which shows the manufacturing process of a transmissive LCD, a transflective LCD, or a bottom emission organic EL. It is sectional drawing which shows the manufacturing process of a transmission type LCD or a transflective type or bottom emission type organic EL. It is sectional drawing which shows the manufacturing process of a transmissive LCD or bottom emission or transflective LCD or bottom emission organic EL. It is sectional drawing which shows the manufacturing process of a transmissive LCD or bottom emission or transflective LCD or bottom emission organic EL. FIG. 3 is a cross-sectional view for explaining a transflective LCD. It is sectional drawing for demonstrating the TFT leak countermeasure. It is sectional drawing which shows the transmission type LCD or the semi-transmission type LCD produced by the porous Si layer separation method. It is sectional drawing which shows the bottom emission organic EL produced by the porous Si layer separation method. It is sectional drawing which shows the manufacturing process of the electro-optical display device by the double porous Si layer separation method. It is sectional drawing which shows the manufacturing process of the electro-optical display device by the double porous Si layer separation method. It is sectional drawing which shows the manufacturing process of the electro-optical display device by the double porous Si layer separation method. It is sectional drawing which shows the manufacturing process of the electro-optical display device by the double porous Si layer separation method. A cross-sectional view showing a manufacturing process of the electro-optical display device according to the double porous Si layer separation method, (a) shows the diagram showing an example of a case of forming the SiO ₂ as the insulating layer, (b) as the insulating layer it is a diagram illustrating an example of a case of forming the SiO ₂ and Si ₃ N ₄ and SiO _2. It is sectional drawing which shows the manufacturing process of the reflection type LCD by a double porous Si layer separation method. It is sectional drawing which shows the manufacturing process of the reflection type LCD by a double porous Si layer separation method. It is sectional drawing which shows the manufacturing process of the reflection type LCD by a double porous Si layer separation method. It is sectional drawing which shows the reflection type LCD produced by the double porous Si layer separation method. It is sectional drawing which shows the manufacturing process of the electro-optical display device by a hydrogen ion implantation layer separation method. It is sectional drawing which shows the manufacturing process of the electro-optical display device by a hydrogen ion implantation layer separation method. A cross-sectional view showing a manufacturing process of the electro-optical display device according deuterium ion implantation layer separation method, (a) shows the diagram showing an example of a case of forming the SiO ₂ as the insulating layer, (b) as the insulating layer it is a diagram illustrating an example of a case of forming the SiO ₂ and Si ₃ N ₄ and SiO _2. It is sectional drawing which shows the manufacturing process of the electro-optical display device by a double hydrogen ion implantation layer separation method. It is sectional drawing which shows the manufacturing process of the electro-optical display device by a double hydrogen ion implantation layer separation method. It is sectional drawing which shows the manufacturing process of the electro-optical display device by a porous Si layer and a hydrogen ion implantation layer separation method. It is sectional drawing which shows the manufacturing process of the electro-optical display device by a porous Si layer and a hydrogen ion implantation layer separation method. It is sectional drawing which shows the manufacturing process of the electro-optical display device by a porous Si layer and a hydrogen ion implantation layer separation method. BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic sectional drawing of the high pressure fluid jet spray peeling apparatus in embodiment of this invention. It is sectional drawing which shows the manufacturing process of the electro-optical display device by the double porous Si layer separation method. It is sectional drawing for demonstrating C chamfering of the peripheral part of the support substrate surface after seed substrate separation. FIG. 4A is a diagram showing a method of assembling an LCD and an organic EL by the porous semiconductor layer separation method of FIG. It is a figure which shows the assembly method of LCD and organic EL by the double porous semiconductor layer separation method of (B). It is a figure which shows the assembly method of LCD and organic EL by the ion implantation layer separation method of (C). It is a figure which shows the assembly method of LCD and organic EL by the double ion implantation layer separation method of (D). It is a figure which shows the assembly method of LCD and organic EL by the porous semiconductor layer and ion implantation layer separation method of (E). FIG. 2 is a cross-sectional view showing a transmission type LCD for a projector having a dual microlens (double microlens) structure. It is sectional drawing which shows the transmission type LCD for projectors, and the reflection type LCD. It is sectional drawing which shows the example of mounting using the ultra-thin electro-optic display device for direct vision of this invention. It is sectional drawing which shows the specific example of the ultra-thin electronic product using this invention.

Explanation of reference numerals

10 Single crystal Si substrate 11a, 11c, 31a, 31c, 34a, 34c, 53, 55 Low porous Si layer 11b, 31b, 34b, 54 High porous Si layer 12, 13, 32, 35, 40a, 43, 51 , 56 Single crystal Si layer 13a Reflective electrode 13c, 14a Transparent electrode 13b, 14b Alignment film 14 Counter substrate 14c Color filter, etc. 15 Sealant 16, 45 UV tape 17 Adhesive 17a, 25 Transparent adhesive 18 Metal support substrate 19 Liquid crystal 20a Transparent electrode 20b Organic EL light emitting layer 20c Metal electrode 21 Moisture resistant transparent resin 22 Transparent support substrate 23 Transparent resin or SiO ₂
26a light shielding film 26b reflection film 26c light shielding metal film 27 high refractive index transparent resin 29 transparent glass substrate 30, 42, 50 seed substrate 33, 40, 52 supporting substrate 36, 57 insulating layer 36a, 41a SiO ₂
36b Si ₃ N ₄
37 Hydrogen ion implanted layer 38, 40b, 58 Strain layer 60 Groove 80 Guard ring stopper 81a, 81b Holder 82 High pressure fluid jet 83 Micro nozzle 84 Slit hole 100 Pixel opening 101 Photosensitive resin film with moderate unevenness 102 Moderate unevenness Reflective electrode 103 TFT for display
104, 105 SiO ₂ layer 106 External extraction electrode 107 Flexible substrate 108 Dustproof glass with low reflection film 109 Metal frame 110 High heat conductive mold resin 111 Parting plate 120 Backlight module 121 Light diffusion plate 122 Polarizing plate 123 Ultra thin transmission or Transflective LCD
124 Mold resin 125 PCB
126 Bump electrode for PCB wiring 127 Bump electrode for external extraction 128 Backlight wiring 129 Ultra-thin reflective LCD
130 Ultra-thin bottom-emitting organic EL
131 Ultra-thin top-emitting organic EL
132 multilayer PCB
133 Ultra-thin electro-optical display device of the present invention 134 Ultra-thin MOS LSI of the present invention
135 Ultra-thin CCD of the present invention
136 Ultra-thin microphone 137 Ultra-thin speaker 138 Antenna 139 Polymer battery pack with built-in power circuit

Claims (76)

Forming a porous semiconductor layer on a supporting substrate made of a single crystal semiconductor,
Forming a single crystal semiconductor layer on the support substrate via the porous semiconductor layer,
Forming a display element and a peripheral circuit in the single crystal semiconductor layer;
Separating the support substrate from the porous semiconductor layer,
Affixing a support to the back surface of the ultra-thin electro-optical display element substrate after the separation,
Separating the ultra-thin electro-optical display device after the support is attached to the electro-optical display device. A step of forming a porous semiconductor layer on both the seed substrate and the support substrate each made of a single crystal semiconductor,
Forming a single crystal semiconductor layer on both the seed substrate and the support substrate via the porous semiconductor layer,
Forming an insulating layer on at least one of the seed substrate and the support substrate with the single crystal semiconductor layer interposed therebetween;
A step of bonding the seed substrate and the support substrate on the surface on which the insulating layer is formed and the surface on which the single crystal semiconductor layer is formed via the porous semiconductor layer,
Separating the seed substrate from the porous semiconductor layer of the seed substrate,
A step of etching and flattening the surface of the single crystal semiconductor layer exposed by the separation of the seed substrate by at least a hydrogen annealing treatment,
Forming a display element and a peripheral circuit on the single crystal semiconductor layer of the support substrate;
Separating the supporting substrate from the porous semiconductor layer of the supporting substrate,
Affixing a support to the back surface of the ultra-thin electro-optical display element substrate after the separation,
Separating the ultra-thin electro-optical display device after the support is attached to the electro-optical display device. A step of forming a display element and a peripheral circuit on a support substrate made of a single crystal semiconductor,
Forming an ion-implanted layer on the support substrate,
Performing an annealing treatment for separation, and separating the support substrate from the strained portion of the ion-implanted layer;
Affixing a support to the back surface of the ultra-thin electro-optical display element substrate after the separation,
Separating the ultra-thin electro-optical display device after the support is attached to the electro-optical display device. A step of forming an ion-implanted layer on a seed substrate made of a single-crystal semiconductor,
Forming an insulating layer on a supporting substrate made of a single crystal semiconductor;
Bonding the ion-implanted layer of the seed substrate and the insulating layer of the support substrate, and forming a single-crystal semiconductor layer by covalently bonding the ion-implanted layer and the insulating layer by heat treatment;
Performing a peeling annealing process, separating the seed substrate from the strained portion of the ion implantation layer of the seed substrate,
Etching and flattening the surface of the single crystal semiconductor layer by at least hydrogen annealing;
Forming a display element and a peripheral circuit on the single crystal semiconductor layer of the support substrate;
After these steps, a step of forming an ion-implanted layer on the support substrate and performing an annealing treatment for peeling;
Separating the support substrate from the strained portion of the ion implantation layer of the support substrate,
Affixing a support to the back surface of the ultra-thin electro-optical display element substrate after the separation,
Separating the ultra-thin electro-optical display device after the support is attached to the electro-optical display device. A step of forming an ion-implanted layer on a seed substrate made of a single-crystal semiconductor,
Forming a porous semiconductor layer on a supporting substrate made of a single crystal semiconductor,
Forming a single crystal semiconductor layer on the support substrate via the porous semiconductor layer;
Forming an insulating layer on the single crystal semiconductor layer;
Laminating the ion-implanted layer of the seed substrate and the insulating layer of the support substrate, and forming a single crystal semiconductor layer by covalently bonding the ion-implanted layer of the seed substrate and the insulating layer of the support substrate by heat treatment; ,
Performing a peeling annealing process, separating the seed substrate from the strained portion of the ion implantation layer,
Etching and flattening the surface of the single crystal semiconductor layer by at least hydrogen annealing;
Forming a display element and a peripheral circuit on the single crystal semiconductor layer of the support substrate;
Separating the support substrate from the porous semiconductor layer,
Affixing a support to the back surface of the ultra-thin electro-optical display element substrate after the separation,
Separating the ultra-thin electro-optical display device after the support is attached to the electro-optical display device. The separation of the support substrate is performed after forming a groove from the single crystal semiconductor layer to at least the porous semiconductor layer along a division line in a division region when dividing into the electro-optical display devices. The method for manufacturing an ultra-thin electro-optical display device according to claim 1, 2, or 5. The separation of the support substrate is performed after forming a groove from the single crystal semiconductor layer to at least a strained portion of the ion implantation layer of the support substrate along a division line in a division region when dividing into the electro-optical display devices. The method according to claim 3, wherein the method is performed. The separation from the porous semiconductor layer is performed by jetting a high-pressure fluid jet of a gas, a liquid, or a mixture of a gas and a liquid onto the rotating porous semiconductor layer. 7. The method of manufacturing an ultra-thin electro-optical display device according to claim 5, 5 or 6. The separation of the ion-implanted layer from the strained portion after the peeling annealing treatment is performed by jetting a high-pressure fluid jet of a gas, a liquid, or a mixture of a gas and a liquid onto the rotating ion-implanted layer. The method for manufacturing an ultra-thin electro-optical display device according to claim 3, 4, 5, or 7. The method according to claim 8, wherein the high-pressure fluid jet is obtained by adding a fine solid. The method for manufacturing an ultra-thin electro-optical display device according to claim 8, wherein the high-pressure fluid jet is applied with ultrasonic waves. 7. The ultra-thin electro-optical display device according to claim 1, wherein the separation from the porous semiconductor layer is performed by laser processing the rotating porous semiconductor layer. Method. The method for manufacturing an ultra-thin electro-optical display device according to claim 3, wherein the separation from the ion-implanted layer is performed by laser processing on the rotating ion-implanted layer. 7. The ultra-thin electro-optical display device according to claim 1, wherein the separation from the porous semiconductor layer is performed by laser water jet processing on the rotating porous semiconductor layer. Manufacturing method. The manufacturing of the ultra-thin electro-optical display device according to claim 3, wherein separation from the ion implantation layer is performed by laser water jet processing on the rotating ion implantation layer. Method. The method for manufacturing an ultra-thin electro-optical display device according to claim 3, wherein the annealing for peeling is performed by rapid thermal annealing. 17. The method of manufacturing an ultra-thin electro-optical display device according to claim 16, wherein the peeling annealing radiates heat from the back surface of the support substrate. 18. The method of manufacturing an ultra-thin electro-optical display device according to claim 17, wherein the surface of the single crystal semiconductor layer is fluid-cooled via an ultraviolet irradiation curing tape. The support substrate is separated after overlapping and sealing an opposing substrate via a predetermined liquid crystal gap on the electro-optic display element substrate of the single crystal semiconductor layer,
Affixing the support with an adhesive to the ultra-thin electro-optical display element substrate after the separation,
8. The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein liquid crystal injection and sealing are performed after dividing into each of the ultra-thin electro-optical display devices. The support substrate is separated after overlapping and sealing an opposing substrate via a predetermined liquid crystal gap on the electro-optic display element substrate of the single crystal semiconductor layer,
A good chip of the support is attached to a good chip in the ultra-thin electro-optical display element substrate after the separation with an adhesive,
8. The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein liquid crystal injection and sealing are performed after dividing into each of the ultra-thin electro-optical display devices. After attaching the support to the ultra-thin electro-optical display element substrate after the separation with an adhesive,
The opposing substrate on which the transparent electrode is formed and the alignment film is formed and the alignment process is performed, and the electro-optical display device substrate on which the alignment film is formed and the alignment process is overlapped and sealed via a predetermined liquid crystal gap.
8. The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein liquid crystal injection and sealing are performed after dividing into each of the ultra-thin electro-optical display devices. After attaching the support to the ultra-thin electro-optical display element substrate after the separation with an adhesive,
The non-defective chip of the opposing substrate, which is formed by forming the transparent electrode and forming the alignment film, and then cut by performing the alignment treatment, is superimposed on the non-defective chip in the electro-optical display element substrate having undergone the alignment film formation and the alignment treatment via a predetermined liquid crystal gap. And seal,
8. The liquid crystal display device according to claim 1, wherein the liquid crystal display device is divided into the respective ultra-thin electro-optical display devices and then divided into the respective ultra-thin electro-optical display devices after the liquid crystal is injected and sealed. 3. The method for manufacturing an ultra-thin electro-optical display device according to item 1. A support is attached to the ultra-thin electro-optical display element substrate after the separation using an adhesive, and an alignment film is formed and aligned. The non-defective chips of the counter substrate are overlapped and sealed via a predetermined liquid crystal gap,
8. The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein liquid crystal is injected and sealed. Non-defective chips in the electro-optical display element substrate of the single crystal semiconductor layer are overlapped and sealed with non-defective chips of the opposite substrate through a predetermined liquid crystal gap,
After the liquid crystal injection sealing, the support substrate is separated,
Affixing the support with an adhesive in the ultra-thin electro-optical display element substrate after the separation,
The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein each of the ultra-thin electro-optical display devices is divided. Non-defective chips in the electro-optical display element substrate of the single crystal semiconductor layer are overlapped and sealed with non-defective chips of the opposite substrate through a predetermined liquid crystal gap,
After the liquid crystal injection sealing, the support substrate is separated,
A good chip of the support is attached to a good chip in the ultra-thin electro-optical display element substrate after the separation with an adhesive,
The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein each of the ultra-thin electro-optical display devices is divided. A portion corresponding to a pixel opening of a display unit of the electro-optical display element substrate is removed by etching,
The removed portion is buried with a light transmissive material to flatten the surface, a transparent electrode connected to the pixel display element is formed thereon, an alignment film is formed, and an alignment process is performed on the electro-optical display element substrate. After the alignment substrate is formed and aligned, the counter substrate is overlapped and sealed via a predetermined liquid crystal gap,
Performing the separation of the support substrate, exposing at least the light transmitting material of the pixel opening of the display unit,
A transparent support is attached to the ultra-thin electro-optical display element substrate after separation with a transparent adhesive,
8. The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein liquid crystal injection and sealing are performed after dividing into each of the ultra-thin electro-optical display devices. A portion corresponding to a pixel opening of a display unit of the electro-optical display element substrate is removed by etching,
The removed portion is buried with a light transmissive material to flatten the surface, a transparent electrode connected to the pixel display element is formed thereon, an alignment film is formed, and an alignment process is performed on the electro-optical display element substrate. After the alignment substrate is formed and aligned, the counter substrate is overlapped and sealed via a predetermined liquid crystal gap,
Performing the separation of the support substrate, exposing at least the light transmitting material of the pixel opening of the display unit,
A good chip of a transparent support is attached to a good chip in the ultra-thin electro-optical display element substrate after the separation with a transparent adhesive,
8. The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein liquid crystal injection and sealing are performed after dividing into each of the ultra-thin electro-optical display devices. A portion corresponding to a pixel opening of a display unit of the electro-optical display element substrate is removed by etching,
The removed portion is buried with a light transmissive material and the surface is flattened, a transparent electrode connected to the pixel display element is formed thereon, and an alignment film is formed and alignment processing is performed. Non-defective chips of the counter substrate on which the electrodes are formed, the alignment film is formed and the alignment processing is performed, and the liquid crystal is injected and sealed after being overlapped and sealed via a predetermined liquid crystal gap,
Performing the separation of the support substrate, exposing at least the light transmitting material of the pixel opening of the display unit,
A transparent support is attached to the ultra-thin electro-optical display element substrate after separation with a transparent adhesive,
The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein each of the ultra-thin electro-optical display devices is divided. A portion corresponding to a pixel opening of a display unit of the electro-optical display element substrate is removed by etching,
The removed portion is buried with a light transmissive material and the surface is flattened, a transparent electrode connected to the pixel display element is formed thereon, and an alignment film is formed and alignment processing is performed. Non-defective chips of the counter substrate on which the electrodes are formed, the alignment film is formed and the alignment processing is performed, and the liquid crystal is injected and sealed after being overlapped and sealed via a predetermined liquid crystal gap,
Performing the separation of the support substrate, exposing at least the light transmitting material of the pixel opening of the display unit,
A good chip of a transparent support is attached to a good chip in the ultra-thin electro-optical display element substrate after the separation with a transparent adhesive,
The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein each of the ultra-thin electro-optical display devices is divided. The non-defective chips in the electro-optical display element substrate on which the alignment film was formed and the alignment treatment were performed, and the non-defective chips of the counter substrate on which the transparent electrode was formed and the alignment film was formed and the alignment treatment was overlapped and sealed via a predetermined liquid crystal gap. After filling and sealing the liquid crystal,
Separating the support substrate,
Paste a transparent support with a transparent adhesive inside the ultra-thin electro-optical display element substrate after this separation,
The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein each of the ultra-thin electro-optical display devices is divided. The non-defective chips in the electro-optical display element substrate on which the alignment film was formed and the alignment treatment were performed, and the non-defective chips of the counter substrate on which the transparent electrode was formed and the alignment film was formed and the alignment treatment was overlapped and sealed via a predetermined liquid crystal gap. After filling and sealing the liquid crystal,
Separating the support substrate,
A good chip of a transparent support is attached to a good chip in the ultra-thin electro-optical display element substrate after the separation with a transparent adhesive,
The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein each of the ultra-thin electro-optical display devices is divided. After pasting a transparent support with a transparent adhesive on the ultra-thin electro-optical display element substrate after the separation,
A portion corresponding to a pixel opening of a display unit of the electro-optical display element substrate is removed by etching,
The removed portion is buried with a light transmissive material to flatten the surface, a transparent electrode connected to the pixel display element is formed thereon, an alignment film is formed, and an alignment process is performed on the electro-optical display element substrate. The counter substrate subjected to alignment film formation and alignment treatment is overlapped and sealed via a predetermined liquid crystal gap,
8. The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein liquid crystal injection and sealing are performed after dividing into each of the ultra-thin electro-optical display devices. After pasting a transparent support with a transparent adhesive on the ultra-thin electro-optical display element substrate after the separation,
A portion corresponding to a pixel opening of a display unit of the electro-optical display element substrate is removed by etching,
The removed portion is buried with a light transmissive material and the surface is flattened, and a transparent electrode connected to the pixel display element is formed thereon,
Further, a non-defective chip in the opposing substrate formed by forming a transparent electrode, forming an alignment film, and performing an alignment treatment is superimposed on a non-defective chip in the electro-optical display element substrate on which an alignment film is formed and subjected to an alignment treatment via a predetermined liquid crystal gap. Seal together,
8. The liquid crystal display device according to claim 1, wherein the liquid crystal display device is divided into the respective ultra-thin electro-optical display devices and then divided into the respective ultra-thin electro-optical display devices after the liquid crystal is injected and sealed. 3. The method for manufacturing an ultra-thin electro-optical display device according to item 1. After pasting a transparent support with a transparent adhesive on the ultra-thin electro-optical display element substrate after the separation,
A portion corresponding to a pixel opening of a display unit of the electro-optical display element substrate is removed by etching,
The removed portion is buried with a light transmissive material and the surface is flattened, and a transparent electrode connected to the pixel display element is formed thereon,
Further, a non-defective chip of the electro-optical display element substrate cut by performing the alignment film formation and the alignment treatment is connected to a non-defective chip of the counter substrate cut by the transparent electrode formation and the alignment film formation and the alignment treatment through a predetermined liquid crystal gap. And seal it on top of each other.
8. The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein liquid crystal is injected and sealed. A light-resistant transparent adhesive is used on the ultra-thin electro-optical display element substrate after separation, wherein at least a transparent support having a high thermal conductivity of 1 (W / m · K) or more that satisfies optical characteristics is used as a transparent support. The method for manufacturing an ultra-thin electro-optical display device according to any one of claims 1 to 7, wherein the method is applied. The high thermal conductive glass having a low reflective film formed from the incident side, the counter substrate of the high thermal conductive glass, a liquid crystal layer, an ultra-thin electro-optical display element substrate, a support substrate of the high thermal conductive glass, and the low reflective film are formed. The method for manufacturing an ultra-thin electro-optical display device according to claim 35, wherein the high thermal conductive glasses are bonded together with a light-resistant transparent adhesive. As the high thermal conductive glass having a low reflective film formed from the incident side, a counter substrate of the high thermal conductive glass, a liquid crystal layer, an ultra-thin electro-optical display element substrate and a high thermal conductive opaque support substrate, The high thermal conductive glass and the opposite substrate of the high thermal conductive glass are bonded with a light-resistant transparent adhesive, and the ultra-thin electro-optic display element substrate and the high thermal conductive opaque support substrate are bonded with a high thermal conductive adhesive. The method for manufacturing an ultra-thin electro-optical display device according to claim 35, wherein: Electro-optics in which the opposing substrate on which a microlens array is formed and the light-transmitting material are buried by etching the pixel openings of the display section to flatten the surface, and a transparent electrode connected to the display element and an alignment film are formed to perform alignment processing. After overlaying and sealing the display element substrate and injecting and sealing the liquid crystal,
Separating the supporting substrate from the strained portion of the porous semiconductor layer or the ion implantation layer,
A microlens array-forming transparent support substrate that functions as a field lens is adhered to a super-thin electro-optical display element substrate in which the light-transmitting material is exposed by etching the peeling residue. A method for manufacturing the ultra-thin electro-optical display device according to claim 1. A microlens array and a counter substrate having a reflective film formed around the microlenses, and a pixel opening of the display section being etched to bury a light-transmitting material to flatten the surface, and forming a transparent electrode and an alignment film connected to the display element After overlaying and sealing the electro-optical display element substrate that has been subjected to the alignment process and sealing and injecting liquid crystal,
Separating the supporting substrate from the strained portion of the porous semiconductor layer or the ion implantation layer,
A transparent support substrate with a low-reflection light-shielding film formed around a microlens array that functions as a field lens is adhered to the ultra-thin electro-optical display element substrate with the light-transmitting material exposed by etching the peeling residue. The method for manufacturing an ultra-thin electro-optical display device according to any one of claims 1 to 7, wherein: After removing the single crystal semiconductor layer at the pixel opening in the display area of the ultra-thin electro-optical display element substrate,
At least an insulating film and a light-shielding metal film are sequentially formed on at least the inner surface thereof, and the light-transmitting material is buried to flatten the surface,
A transparent electrode connected to the display element is formed thereon, so that a side part or an upper part and a side part of the single crystal semiconductor layer on which the display element is formed are covered with a light-shielding metal film via an insulating film. Item 8. A method for manufacturing an ultra-thin electro-optical display device according to any one of Items 1 to 7. The method of manufacturing an ultra-thin electro-optical display device according to claim 40, wherein the light-transmitting material is embedded after removing the light-shielding metal film on the bottom surface of the pixel opening in the display area. 42. The method according to claim 40, wherein the light-shielding metal film on the inner wall of the pixel opening is dropped to a ground potential. A portion corresponding to a pixel opening of a display unit of the electro-optical display element substrate is removed by etching,
The removed portion is buried with a light transmissive material and the surface is flattened, and a pixel electrode of two regions of reflection and transmission connected to the pixel display element is formed thereon, and an alignment film is formed and the alignment process is performed on the electro-optical display element substrate. After forming a transparent electrode, forming an alignment film and performing an alignment treatment, the opposing substrate is overlapped and sealed via a predetermined liquid crystal gap.
Performing the separation of the support substrate, exposing at least the light transmitting material of the pixel opening of the display unit,
A transparent support is attached to the ultra-thin electro-optical display element substrate after separation with a transparent adhesive,
8. The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein liquid crystal injection and sealing are performed after dividing into each of the ultra-thin electro-optical display devices. A portion corresponding to a pixel opening of a display unit of the electro-optical display element substrate is removed by etching,
The removed portion is buried with a light transmissive material and the surface is flattened, and a pixel electrode of two regions of reflection and transmission connected to the pixel display element is formed thereon, and an alignment film is formed and the alignment process is performed on the electro-optical display element substrate. After forming a transparent electrode, forming an alignment film and performing an alignment treatment, the opposing substrate is overlapped and sealed via a predetermined liquid crystal gap.
Performing the separation of the support substrate, exposing at least the light transmitting material of the pixel opening of the display unit,
A good chip of a transparent support is attached to a good chip in the ultra-thin electro-optical display element substrate after the separation with a transparent adhesive,
8. The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein liquid crystal injection and sealing are performed after dividing into each of the ultra-thin electro-optical display devices. A portion corresponding to a pixel opening of a display unit of the electro-optical display element substrate is removed by etching,
The removed portion is buried with a light transmissive material and the surface is flattened, and a pixel electrode in two regions of reflection and transmission connected to the pixel display element is formed thereon to form an alignment film and perform an alignment treatment in the electro-optical display element substrate. A non-defective chip, a non-defective chip of a counter substrate, on which a transparent electrode is formed and an alignment film is formed and subjected to alignment treatment, is overlapped and sealed via a predetermined liquid crystal gap, and then liquid crystal injection sealing is performed.
Performing the separation of the support substrate, exposing at least the light transmitting material of the pixel opening of the display unit,
A transparent support is attached to the ultra-thin electro-optical display element substrate after separation with a transparent adhesive,
The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein each of the ultra-thin electro-optical display devices is divided. A portion corresponding to a pixel opening of a display unit of the electro-optical display element substrate is removed by etching,
The removed portion is buried with a light transmissive material and the surface is flattened, and a pixel electrode in two regions of reflection and transmission connected to the pixel display element is formed thereon to form an alignment film and perform an alignment treatment in the electro-optical display element substrate. A non-defective chip, a non-defective chip of a counter substrate, on which a transparent electrode is formed and an alignment film is formed and subjected to alignment treatment, is overlapped and sealed via a predetermined liquid crystal gap, and then liquid crystal injection sealing is performed.
Performing the separation of the support substrate, exposing at least the light transmitting material of the pixel opening of the display unit,
A good chip of a transparent support is attached to a good chip in the ultra-thin electro-optical display element substrate after the separation with a transparent adhesive,
The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein each of the ultra-thin electro-optical display devices is divided. A transparent electrode was formed on the non-defective chip in the electro-optic display element substrate on which an alignment film was formed and aligned by forming a pixel electrode in two regions of reflection and transmission connected to the pixel display element, and an alignment film was formed and aligned. Non-defective chips of the opposing substrate are stacked and sealed via a predetermined liquid crystal gap, and then sealed and injected with liquid crystal.
Separating the support substrate,
Paste a transparent support with a transparent adhesive inside the ultra-thin electro-optical display element substrate after this separation,
The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein each of the ultra-thin electro-optical display devices is divided. A transparent electrode was formed on the non-defective chip in the electro-optic display element substrate on which an alignment film was formed and aligned by forming a pixel electrode in two regions of reflection and transmission connected to the pixel display element, and an alignment film was formed and aligned. Non-defective chips of the opposing substrate are stacked and sealed via a predetermined liquid crystal gap, and then sealed and injected with liquid crystal.
Separating the support substrate,
A good chip of a transparent support is attached to a good chip in the ultra-thin electro-optical display element substrate after the separation with a transparent adhesive,
The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein each of the ultra-thin electro-optical display devices is divided. After pasting a transparent support with a transparent adhesive on the ultra-thin electro-optical display element substrate after the separation,
A portion corresponding to a pixel opening of a display unit of the electro-optical display element substrate is removed by etching,
The removed portion is buried with a light transmissive material and the surface is flattened, and a pixel electrode of two regions of reflection and transmission connected to the pixel display element is formed thereon, and an alignment film is formed and the alignment process is performed on the electro-optical display element substrate. The transparent substrate is formed, the alignment film is formed and the alignment treatment is performed, and the counter substrate is overlapped and sealed via a predetermined liquid crystal gap.
8. The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein liquid crystal injection and sealing are performed after dividing into each of the ultra-thin electro-optical display devices. After pasting a transparent support with a transparent adhesive on the ultra-thin electro-optical display element substrate after the separation,
A portion corresponding to a pixel opening of a display unit of the electro-optical display element substrate is removed by etching,
The removed portion is buried with a light-transmitting material and the surface is flattened, and a pixel electrode in two regions of reflection and transmission connected to the pixel display element is formed there.
Further, a non-defective chip in the opposing substrate formed by forming a transparent electrode, forming an alignment film, and performing an alignment treatment is superimposed on a non-defective chip in the electro-optical display element substrate on which an alignment film is formed and subjected to an alignment treatment via a predetermined liquid crystal gap. Seal together
The method for manufacturing an ultra-thin electro-optical display device according to any one of claims 1 to 7, wherein the liquid crystal display device is divided into the ultra-thin electro-optical display devices after liquid crystal injection and sealing. After pasting a transparent support with a transparent adhesive on the ultra-thin electro-optical display element substrate after the separation,
A portion corresponding to a pixel opening of a display unit of the electro-optical display element substrate is removed by etching,
The removed portion is buried with a light-transmitting material and the surface is flattened, and a pixel electrode in two regions of reflection and transmission connected to the pixel display element is formed there.
Further, a non-defective chip in the opposing substrate formed by forming a transparent electrode, forming an alignment film, and performing an alignment treatment is superimposed on a non-defective chip in the electro-optical display element substrate on which an alignment film is formed and subjected to an alignment treatment via a predetermined liquid crystal gap. Seal together,
8. The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein liquid crystal is injected and sealed after dividing into each of the ultra-thin electro-optical display devices. After pasting a transparent support with a transparent adhesive on the ultra-thin electro-optical display element substrate after the separation,
A portion corresponding to a pixel opening of a display unit of the electro-optical display element substrate is removed by etching,
The removed portion is buried with a light-transmitting material and the surface is flattened, and a pixel electrode in two regions of reflection and transmission connected to the pixel display element is formed there.
Further, a non-defective chip of the electro-optical display element substrate cut by performing the alignment film formation and the alignment treatment is connected to a non-defective chip of the counter substrate cut by the transparent electrode formation and the alignment film formation and the alignment treatment through a predetermined liquid crystal gap. And seal it on top of each other.
8. The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein liquid crystal is injected and sealed. Forming a cathode, an organic EL light emitting layer and an anode on a pixel display element of a display portion of the electro-optic display element substrate of the single crystal semiconductor layer,
After sealing with a moisture-resistant transparent resin, the support substrate is separated,
Affixing the support with an adhesive to the ultra-thin electro-optical display element substrate after the separation,
The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein each of the ultra-thin electro-optical display devices is divided. Forming a cathode, an organic EL light emitting layer and an anode on a pixel display element of a display portion of the electro-optic display element substrate of the single crystal semiconductor layer,
After sealing with a moisture-resistant transparent resin, the support substrate is separated,
A good-quality support chip is attached to a good-quality chip in the ultra-thin electro-optical display element substrate after the separation with an adhesive,
The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein each of the ultra-thin electro-optical display devices is divided. After attaching the support to the ultra-thin electro-optical display element substrate after the separation with an adhesive,
Forming a cathode, an organic EL light emitting layer and an anode on a pixel display element of a display section of the electro-optical display element substrate;
The method for manufacturing an ultra-thin electro-optical display device according to any one of claims 1 to 7, wherein the device is divided into the ultra-thin electro-optical display devices after sealing with a moisture-resistant transparent resin. A portion corresponding to a pixel opening of a display unit of the electro-optical display element substrate is removed by etching,
The removed portion is buried with a light transmissive material to flatten the surface,
An anode connected to the pixel display element, an organic EL light emitting layer and a cathode are formed thereon,
Separate the support substrate after sealing with moisture resistant resin,
At least exposing the light transmitting material of the pixel opening of the display unit,
A transparent support is attached to the ultra-thin electro-optical display element substrate after separation with a transparent adhesive,
The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein each of the ultra-thin electro-optical display devices is divided. A portion corresponding to a pixel opening of a display unit of the electro-optical display element substrate is removed by etching,
The removed portion is buried with a light transmissive material to flatten the surface,
An anode connected to the pixel display element, an organic EL light emitting layer and a cathode are formed thereon,
Separate the support substrate after sealing with moisture resistant resin,
At least exposing the light transmitting material of the pixel opening of the display unit,
A good chip of a transparent support is attached to a good chip in the ultra-thin electro-optical display element substrate after the separation with a transparent adhesive,
The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein each of the ultra-thin electro-optical display devices is divided. After pasting a transparent support with a transparent adhesive on the ultra-thin electro-optical display element substrate after the separation,
A portion corresponding to a pixel opening of a display unit of the electro-optical display element substrate is removed by etching,
The removed portion is buried with a light transmissive material to flatten the surface,
An anode connected to the pixel display element, an organic EL light emitting layer and a cathode are formed thereon,
The method for manufacturing an ultra-thin electro-optical display device according to any one of claims 1 to 7, wherein the device is divided into the ultra-thin electro-optical display devices after sealing with a moisture-resistant resin. A white color is applied to the liquid crystal side of an area corresponding to a peripheral area of a pixel opening in the display area of the ultra-thin electro-optical display element substrate and an entire peripheral circuit area of the ultra-thin electro-optical display element substrate. Forming a reflective film,
In the surface of the transparent support substrate, in the peripheral region of the pixel opening in the display region of the ultra-thin electro-optical display element substrate and in the region corresponding to the entire peripheral circuit region of the ultra-thin electro-optical display element substrate, a black-based low The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein a reflective light-shielding film is formed. The ultra-thin electro-optical display device according to any one of claims 1 to 7, wherein the display portion or a part of the display portion and peripheral circuits are formed in the single crystal semiconductor layer below the reflective electrode of the pixel display portion. Manufacturing method. 8. The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein a peripheral circuit is also formed on the single crystal semiconductor layer in the seal region. 8. The method for manufacturing an ultra-thin electro-optical display device according to claim 1, wherein a peripheral circuit or a display portion and a peripheral circuit having a multilayer wiring structure are formed on the single crystal semiconductor layer. A channel semiconductor layer in which a channel is induced;
7. The ultra-small semiconductor device according to claim 1, wherein the lattice constant is different from that of the channel semiconductor layer, and a strain applying semiconductor layer for applying a strain to the channel semiconductor is formed on the porous semiconductor layer. A method for manufacturing a thin electro-optical display device. A channel semiconductor layer in which a channel is induced;
The superlattice according to any one of claims 1 to 7, wherein a lattice constant is different from that of the channel semiconductor layer, and a strain applying semiconductor layer for applying a strain to the channel semiconductor is formed on the single crystal semiconductor layer. A method for manufacturing a thin electro-optical display device. A channel semiconductor layer in which a channel is induced;
6. The ultra-thin electro-optic according to claim 2, wherein a lattice constant is different from that of the channel semiconductor layer, and a strain applying semiconductor layer for applying a strain to the channel semiconductor is formed on the insulating layer. A method for manufacturing a display device. The method according to any one of claims 63 to 65, wherein the channel semiconductor layer is a silicon layer, and the strain applying semiconductor layer is a silicon germanium layer. The germanium concentration in the strain applying semiconductor layer gradually increases from the contact surface of the porous semiconductor layer, from the contact surface of the single crystal semiconductor layer, or from the contact surface of the insulating layer, 67. The method of manufacturing an ultra-thin electro-optical display device according to claim 63, wherein the gradient composition has a desired concentration on the surface. The method for manufacturing an ultra-thin electro-optical display device according to any one of claims 1 to 7, wherein the separation is performed while being held by an ultraviolet irradiation curing type tape. The method according to claim 2, wherein a porous semiconductor layer formed on the seed substrate has a higher porosity than a porous semiconductor layer formed on the support substrate. . 3. The method according to claim 2, wherein a porous semiconductor layer formed on the seed substrate is thicker than a porous semiconductor layer formed on the support substrate. 6. The method for manufacturing an ultra-thin electro-optical display device according to claim 2, wherein the periphery of the surface of the support substrate including the ultra-thin SOI layer after the separation of the seed substrate is C-chamfered. Method. After bonding the diameter of the seed substrate formed with the single crystal semiconductor layer through the porous semiconductor layer and the diameter of the support substrate formed with the single crystal semiconductor layer and the insulating layer through the porous semiconductor layer with different sizes,
High pressure fluid jet injection or laser water jet injection or laser is applied to the porous semiconductor layer of the seed substrate from the sideways or oblique direction to separate the seed substrate,
3. The method for manufacturing an ultra-thin electro-optical display device according to claim 2, wherein a peripheral portion of a surface of the support substrate including the ultra-thin SOI layer after the separation of the seed substrate is C-chamfered. The insulating layer,
Silicon oxide film,
Silicon oxynitride film,
A stacked film of silicon oxide and silicon nitride,
Silicon nitride film,
A stacked film in which silicon oxide, silicon nitride, and silicon oxide are sequentially stacked;
6. The method for manufacturing an ultra-thin electro-optical display device according to claim 2, wherein the method includes at least one of an aluminum oxide film. An ultra-thin electro-optical display device characterized by obtaining an ultra-thin electro-optical display device by applying a laser water jet combining a laser beam and a water jet irradiated from an output portion to a separating layer of a rotating substrate and separating the laser beam. Display device manufacturing equipment. An apparatus for manufacturing an ultra-thin electro-optical display device, wherein an ultra-thin electro-optical display device is obtained by applying a laser beam emitted from an output section to a separation layer of a rotating substrate to thereby separate the layer. An ultra-thin electro-optical display device is obtained by applying high-pressure fluid jet or laser water jet, which is controlled by the fine nozzle diameter of the output part and the width of the slit hole of the guard ring stopper, to the separation layer of the rotating substrate. An apparatus for manufacturing an ultra-thin electro-optical display device, comprising:

Images