JP2003163337A - Stripping method and method for producing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for stripping a layer not only of small area but also of large area with a high yield over the entire surface of the layer being stripped without causing any damage thereon, and to provide a lightweight semiconductor device produced by pasting the layer being stripped to various base materials and its producing method, especially a lightweight semiconductor device produced by pasting various elements represented by TFT to a flexible film and its producing method. <P>SOLUTION: A first material layer 11 is provided on a substrate, and a second material layer 12 is provided in contact with the first material layer 11. Even if deposition of a film, heat treatment at 500°C or above, or irradiation with laser light is carried out, the first material layer 11 can be separated clearly and readily by a physical means in the second material layer 12 or on the interface, so long as the first material layer 11 has a tensile stress before being stripped and the second material layer 12 has a compressive stress. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a peeling method for a peeled layer, and more particularly to a peeling method for a peeled layer including various elements. In addition, the present invention relates to a semiconductor device having a circuit including a thin film transistor (hereinafter referred to as a TFT) in which a peeled layer to be peeled is attached to a substrate and transferred, and a manufacturing method thereof. For example, an electro-optical device represented by a liquid crystal module or a light emitting device represented by an EL module,
And an electronic device in which such a device is mounted as a component.

[0002] In this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and electro-optical devices, light-emitting devices, semiconductor circuits, and electronic devices are all semiconductor devices.

[0003]

2. Description of the Related Art In recent years, a technique for forming a thin film transistor (TFT) using a semiconductor thin film (having a thickness of several to several hundreds nm) formed on a substrate having an insulating surface has been receiving attention. Thin film transistors are widely applied to electronic devices such as ICs and electro-optical devices, and their development is urgently needed especially as a switching element for image display devices.

Various applications using such an image display device are expected, but attention is particularly focused on their use in portable devices. At present, glass substrates and quartz substrates are often used, but they have the drawback of being fragile and heavy. Further, in mass production, it is difficult to increase the size of a glass substrate or a quartz substrate, which is not suitable. Therefore, it has been attempted to form a TFT element on a flexible substrate, typically a flexible plastic film.

However, since the heat resistance of the plastic film is low, the maximum temperature of the process has to be lowered, and as a result, it is not possible to form a TFT having electric characteristics as good as when formed on a glass substrate. . Therefore, high-performance liquid crystal display devices and light-emitting elements using plastic films have not been realized.

Further, a peeling method for peeling a layer to be peeled existing on a substrate via a separation layer from the substrate has been already proposed. For example, in the techniques disclosed in Japanese Patent Laid-Open Nos. 10-125929 and 10-125931, a separation layer made of amorphous silicon (or polysilicon) is provided, and laser light is irradiated through a substrate. The hydrogen contained in the amorphous silicon is released to generate voids and separate the substrate. In addition, JP-A-10-125930 discloses that a layer to be peeled (referred to as a layer to be transferred in the gazette) is attached to a plastic film to complete a liquid crystal display device using this technique.

However, in the above method, it is essential to use a substrate having a high light-transmitting property.
Further, since energy sufficient to release hydrogen contained in the amorphous silicon is applied, relatively large laser light irradiation is required, which causes a problem that the layer to be peeled is damaged. Further, in the above method, when an element is manufactured on the separation layer, if high-temperature heat treatment or the like is performed in the element manufacturing process, hydrogen contained in the separation layer is diffused and reduced, and the separation layer is irradiated with laser light. However, peeling may not be performed sufficiently. Therefore, since the amount of hydrogen contained in the separation layer is maintained, there is a problem that the process after formation of the separation layer is limited. Further, the above-mentioned publication describes that a light-shielding layer or a reflective layer is provided in order to prevent damage to the layer to be peeled, but in that case, it is difficult to manufacture a transmissive liquid crystal display device. In addition, according to the above method, it is difficult to peel off the peeled layer having a large area.

[0008]

The present invention has been made in view of the above problems, and the present invention provides a peeling method that does not damage the peeled layer, and the peeled layer having a small area. It is an object of the present invention not only to peel off, but also to peel a layer to be peeled having a large area over the entire surface.

Another object of the present invention is to provide a peeling method that does not limit the type of substrate in forming a layer to be peeled.

It is another object of the present invention to provide a light-weight semiconductor device in which a layer to be peeled is attached to various base materials and a manufacturing method thereof. In particular, various devices typified by TFTs (a thin film diode, a photoelectric conversion element (solar cell, sensor, etc.) made of a PIN junction of silicon, and a silicon resistance element) are attached to a flexible film to reduce the weight of a semiconductor device and It is an object to provide a manufacturing method thereof.

[0011]

Means for Solving the Problems The present inventors have made a number of experiments and studies, and provided a first material layer provided on a substrate, and further contacted with the first material layer. A second material layer is provided, and a film is formed or 50 on the second material layer.
When heat treatment was performed at 0 ° C. or higher and the internal stress of each film was measured, the first material layer had a tensile stress and the second material layer had a compressive stress. The lamination of the first material layer and the second material layer does not cause abnormalities in the process such as film peeling (peeling), while applying physical means, typically mechanical force, for example, It can be easily separated by peeling it with a human hand in the layer of the second material layer or at the interface.

That is, the bonding force between the first material layer and the second material layer has a strength capable of withstanding thermal energy, while the first material having a tensile stress immediately before peeling. Since there is stress strain between the layer and the second material layer having compressive stress, it is weak in mechanical energy and peels off. The present inventors have found that the peeling phenomenon is deeply related to the internal stress of the film, and thus the peeling step of peeling by utilizing the internal stress of the film is called a stress peel-off process.

Structure 1 of the invention relating to the peeling method disclosed in the present specification is a peeling method for peeling a layer to be peeled from a substrate, wherein a first material layer having a tensile stress is provided on the substrate. After forming a layer to be peeled, which is in contact with at least the first material layer and includes a second material layer having a compressive stress, on the substrate provided with the first material layer, and then peeling the layer. In the peeling method, the layer is peeled from the substrate provided with the first material layer by a physical means in the layer of the second material layer or at the interface.

Further, in the above-mentioned structure 1, the first material layer is characterized by having a tensile stress in the range of 1 to 1 × 10 ¹⁰ (Dyne / cm ² ). The first material layer is not particularly limited as long as it is a material having a tensile stress in the above range, and metal materials (Ti, Al, Ta, W, Mo,
Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, R
Any one layer of u, Rh, Pd, Os, Ir, Pt, etc., a semiconductor material (eg, Si, Ge, etc.), an insulator material, an organic material, or a stacked layer thereof can be used. A film having a tensile stress larger than 1 to 1 × 10 ¹⁰ (Dyne / cm ² ) is likely to cause peeling when heat treatment is applied.

Further, in the above-mentioned structure 1, the second material layer has a compressive stress in the range of -1 to -1 x 10 ¹⁰ (Dyne / cm ² ). If the second material layer is a material having a compressive stress in the above range,
There is no particular limitation, and metallic materials (Ti, Al, Ta, W, M
o, Cu, Cr, Nd, Fe, Ni, Co, Zr, Z
Any one layer of n, Ru, Rh, Pd, Os, Ir, Pt, etc., a semiconductor material (eg, Si, Ge, etc.), an insulator material, an organic material, or a stacked layer thereof can be used. Note that a film having a compressive stress larger than -1 × 10 ¹⁰ (Dyne / cm ² ) easily causes peeling when heat treatment is applied.

For the first material layer, a material having a compressive stress immediately after formation or a tensile stress immediately before peeling can be used. The constitution of the invention relating to the peeling method disclosed in this specification can be used. 2 is a peeling method for peeling a layer to be peeled from a substrate, wherein a first material layer is provided on the substrate, and at least the first material layer is provided on the substrate provided with the first material layer. After forming a layer to be peeled which is in contact with the material layer and includes a second material layer having a compressive stress, the layer to be peeled is formed from the substrate provided with the first material layer by a physical means. The peeling method is characterized in that the second material layer is peeled in the layer or at the interface.

Further, in the above-mentioned structure 2, the first material layer is 1 to 1 × 10 ¹⁰ (Dyne
It is characterized by having a tensile stress in the range of / cm ² ).

Further, the above-mentioned structure 2 is characterized in that a heat treatment or a laser light irradiation treatment is performed before the peeling.

Also, in the above-mentioned structure 2, the second material layer is characterized by having a compressive stress in the range of -1 to -1 x 10 ¹⁰ (Dyne / cm ² ).

Further, the support may be peeled after being adhered with an adhesive, and the third constitution of the invention relating to the peeling method disclosed in the present specification is a peeling method for peeling the layer to be peeled from the substrate, A first material layer having a tensile stress is provided on a substrate, and a second material which is in contact with at least the first material layer and has a compressive stress is provided on the substrate provided with the first material layer. After forming a layer to be peeled composed of a laminate including layers and adhering a support to the layer to be peeled, the layer to be peeled adhered to the support is physically formed from a substrate provided with the first material layer. The peeling method comprises peeling the second material layer in the layer or at the interface by means.

When a material having a compressive stress immediately after formation but a tensile stress immediately before peeling is used as the first material layer, the constitution 4 of the invention relating to the peeling method disclosed in the present specification is A peeling method for peeling a layer to be peeled from a substrate, wherein a first material layer is provided on the substrate, and at least the first material layer is provided on the substrate provided with the first material layer. After forming a layer to be peeled, which is in contact with and has a second material layer having a compressive stress, and a support is bonded to the layer to be peeled, the layer to be peeled bonded to the support is the first layer. The peeling method is characterized in that the second material layer is peeled from the substrate provided with the material layer by physical means in the layer or at the interface.

In Structure 3 or Structure 4, in order to further promote peeling, heat treatment or laser light irradiation may be performed before the support is bonded.
In this case, a material that absorbs laser light may be selected for the first material layer, and the first material layer may be heated to change the internal stress of the film and facilitate peeling. However, when using laser light, a light-transmitting substrate is used.

Further, in each of the above structures, another layer such as an insulating layer or a metal layer may be provided between the substrate and the first material layer to improve the adhesiveness, but in order to simplify the process. In particular, it is preferable that the first material layer be formed in contact with the substrate.

In the present specification, the physical means is a means recognized by physics rather than chemistry, and specifically, mechanical means or mechanical means having a process that can be reduced to the law of mechanics. It means a means and means to change some mechanical energy (mechanical energy).

However, also in the above constitution 3 or constitution 4, upon peeling by physical means, the bonding force between the first material layer and the second material layer becomes smaller than the bonding force with the support. It is necessary to

Further, in the present invention described above, not only the substrate having a light-transmitting property, but also any substrate such as a glass substrate,
A quartz substrate, a semiconductor substrate, a ceramics substrate, or a metal substrate can be used, and a layer to be peeled provided over the substrate can be peeled off.

Further, a semiconductor device can be manufactured by sticking (transferring) a layer to be peeled provided on a substrate to a transfer body by using the peeling method of the present invention. The method of the invention comprises the steps of forming a first material layer having a tensile stress on a substrate, forming a second material layer having a compressive stress on the first material layer, and The step of forming an insulating layer on the second material layer, the step of forming an element on the insulating layer, and the step of adhering a support to the element, and then applying the support from the substrate by physical means to the second layer. And a step of peeling the material layer in a layer or at an interface, and a step of adhering a transfer body to the insulating layer or the second material layer and sandwiching the element between the support body and the transfer body. And a method of manufacturing a semiconductor device.

When a material having a compressive stress immediately after formation but a tensile stress immediately before peeling is used as the first material layer, the structure of the invention relating to the method for manufacturing a semiconductor device disclosed in this specification is used. Includes a step of forming a first material layer on the substrate, a step of forming a second material layer having a compressive stress on the first material layer, and an insulating layer on the second material layer. Forming step, forming an element on the insulating layer, and adhering a support to the element, and then peeling the support from the substrate by physical means in the layer of the second material layer or at the interface. And a step of adhering a transfer body to the insulating layer or the second material layer and sandwiching the element between the support and the transfer body. Is.

Further, in order to promote peeling, a granular oxide is provided on the first material layer and a second oxide covering the granular oxide is provided.
The material layer may be provided to facilitate peeling.

In the above structure, in order to further promote peeling, heat treatment or laser light irradiation may be performed before the support is bonded. In this case, a material that absorbs laser light may be selected for the first material layer, and the first material layer may be heated to change the internal stress of the film and facilitate peeling. However, when using laser light, a light-transmitting substrate is used.

A semiconductor device may be manufactured by peeling a layer to be peeled provided on a substrate by using the peeling method of the present invention and then sticking the peeled layer to a first transfer body or a second transfer body. It is possible.

Further, in each of the above structures relating to the method for manufacturing a semiconductor device, the element is a thin film transistor having a semiconductor layer as an active layer, and the step of forming the semiconductor layer includes forming a semiconductor layer having an amorphous structure. It is characterized in that a semiconductor layer having a crystal structure is obtained by being crystallized by heat treatment or laser light irradiation treatment.

In the present specification, the term "transfer member" means
After being peeled off, it is to be adhered to the layer to be peeled off and is not particularly limited, and may be a base material of any composition such as plastic, glass, metal, ceramics and the like. Further, in the present specification, the support is for adhering to the layer to be peeled when peeling by a physical means, and is not particularly limited, and may have any composition such as plastic, glass, metal, and ceramics. It may be a substrate. The shape of the transfer body and the shape of the support are not particularly limited, and may be those having a flat surface, those having a curved surface, those having bendability, and those having a film shape. Further, if weight reduction is the top priority, film-like plastic substrates such as polyethylene terephthalate (PET), polyether sulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyether ether. Ketone (PEEK), polysulfone (PSF), polyetherimide (PEI), polyarylate (PA
Plastic substrates such as R) and polybutylene terephthalate (PBT) are preferred.

In each of the above-described structures relating to the method for manufacturing a semiconductor device, when a liquid crystal display device is manufactured, a support is used as a counter substrate and a sealant is used as an adhesive to bond the support to a layer to be peeled. . In this case, the element provided in the peeling layer has a pixel electrode, and a liquid crystal material is filled between the pixel electrode and the counter substrate.

Further, in the above-mentioned respective structures relating to the method for manufacturing a semiconductor device, when a light-emitting device represented by an EL light-emitting device is manufactured, an organic compound layer such as moisture or oxygen is externally applied with a support as a sealing material. It is preferable to completely block the light emitting element from the outside so as to prevent a substance that promotes deterioration from entering. Further, if the weight saving is the highest priority, a film-like plastic substrate is preferable, but since the effect of preventing a substance such as moisture or oxygen that promotes deterioration of the organic compound layer from entering from the outside is weak, If the first insulating film, the second insulating film, and the third insulating film are provided thereover, it is possible to sufficiently prevent entry of substances such as moisture and oxygen from the outside that promote deterioration of the organic compound layer. Good. However, the first insulating film (barrier film)
The second insulating film (stress relaxation film) sandwiched between the first insulating film and the third insulating film (barrier film) has a smaller film stress than the first insulating film and the third insulating film. To

When a light-emitting device represented by an EL light-emitting device is manufactured, not only the support but also the transfer member has the first insulating film, the second insulating film, and the third insulating film similarly. It is preferable to provide it and sufficiently prevent the entry of substances, such as water and oxygen, that promote the deterioration of the organic compound layer from the outside.

In the present specification, the internal stress of a film is a unit breakage which one side of the cross section exerts on the other side when an arbitrary cross section is considered inside the film formed on the substrate. It is the force per area. It can be said that internal stress is more or less always present in a thin film formed by vacuum vapor deposition, sputtering, vapor phase growth or the like. Its value reaches a maximum of 10 ⁹ N / m ² . The internal stress value changes depending on the material of the thin film, the substance of the substrate, the forming conditions of the thin film, and the like. In addition, the internal stress value also changes due to the heat treatment.

The state in which the force exerted on the other party through the unit cross-sectional area perpendicular to the substrate surface is in the tensile direction is called the tensile state, the internal stress at that time is the tensile stress, and the state in the pushing direction is the compressed state. The internal stress at that time is called compressive stress. In this specification, the tensile stress is positive (+) and the compressive stress is negative (-) when shown in graphs and tables.

(Experiment 1) Here, using titanium nitride as the first material layer and silicon oxide as the second material layer, the second material layer is provided in contact with the first material layer, and the second material layer is provided. The following experiment was conducted in order to confirm whether or not the layer to be peeled provided on the material layer could be peeled from the substrate.

First, a layered structure as shown in FIG. 3A is formed on the substrate.

As the substrate 30, a glass substrate (# 173
7) was used. Further, the aluminum-silicon alloy layer 31 having a film thickness of 300 nm was formed on the substrate 30 by the sputtering method. Then, a titanium nitride layer 32 of 100 n is formed on the aluminum-silicon alloy layer 31 by a sputtering method.
The film was formed with a film thickness of m.

Then, a silicon oxide layer 33 having a film thickness of 200 nm was formed by the sputtering method. Silicon oxide layer 3
The film forming conditions of No. 3 are as follows: RF sputtering apparatus, silicon oxide target (diameter 30.5 cm), substrate temperature 150 ° C., film forming pressure 0.4 Pa, film forming power 3 kW,
Argon flow rate / oxygen flow rate = 35 sccm / 15 sccm.

Next, a base insulating layer is formed on the silicon oxide layer 33 by the plasma CVD method. As the base insulating layer, a silicon oxynitride film 34a (composition ratio Si = 32%, O = 27%, N) formed by a plasma CVD method at a film forming temperature of 300 ° C. and source gases SiH ₄ , NH ₃ , and N ₂ O is used. = 2
4%, H = 17%) with a thickness of 50 nm. Next, after cleaning the surface with ozone water, the oxide film on the surface was diluted with dilute hydrofluoric acid (1 /
100 dilution). Then, a silicon oxynitride film 34b (composition ratio Si = 32%, O) formed by plasma CVD at a film forming temperature of 300 ° C. and source gases SiH ₄ and N ₂ O.
= 59%, N = 7%, H = 2%) to a thickness of 100 nm, and the amorphous structure is formed by a plasma CVD method at a film forming temperature of 300 ° C. and a film forming gas of SiH ₄ without exposing to the atmosphere. A semiconductor layer (here, the amorphous silicon layer 35) having
It was formed with a thickness of nm. (Fig. 3 (A))

Then, a nickel acetate salt solution containing 10 ppm by weight of nickel is applied by a spinner. Instead of coating, a method of spattering nickel element over the entire surface by a sputtering method may be used. Then, heat treatment is performed to crystallize the semiconductor film having a crystal structure (here, the polysilicon layer 3
6) is formed. (FIG. 3B) Here, after heat treatment for dehydrogenation (500 ° C., 1 hour), heat treatment for crystallization (550 ° C., 4 hours) is performed to obtain a silicon film having a crystal structure. . Although a crystallization technique using nickel as a metal element that promotes crystallization of silicon is used here, other known crystallization techniques such as a solid phase growth method and a laser crystallization method may be used.

Next, a film substrate 38 (here, polyethylene terephthalate (PET)) was attached to the polysilicon layer 36 by using an epoxy resin as the adhesive layer 37. (Fig. 3 (C))

After obtaining the state of FIG. 3C, the film substrate 38 and the substrate 30 were pulled by a human hand so as to be separated. It was confirmed that at least the titanium nitride and the aluminum-silicon alloy layer remained on the peeled substrate 30. This experiment shows that silicon oxide 33
It is expected to be peeled off in the layer or at the interface.

As described above, the second material layer is provided in contact with the first material layer, and the peeling layer provided on the second material layer is peeled off, so that the peeling layer is entirely removed from the substrate 30. Can be peeled over.

(Experiment 2) When the material of the first material layer is TiN, W, WN, Ta, or TaN, the second material layer (silicon oxide: film) is in contact with the first material layer. Thickness 20
0 nm) was provided and the following experiment was conducted in order to confirm whether or not the layer to be peeled provided on the second material layer can be peeled from the substrate.

As sample 1, after TiN was formed to a thickness of 100 nm on a glass substrate by sputtering,
A 200 nm thick silicon oxide film was formed by sputtering. After the formation of the silicon oxide film, stacking and crystallization were performed as in Experiment 1.

As sample 2, a W film having a thickness of 50 nm was formed on a glass substrate by using a sputtering method, and then a silicon oxide film having a film thickness of 200 nm was formed by using the sputtering method. After the formation of the silicon oxide film, stacking and crystallization were performed as in Experiment 1.

As Sample 3, a WN film having a thickness of 50 nm was formed on a glass substrate by a sputtering method, and then a silicon oxide film having a film thickness of 200 nm was formed by a sputtering method. After the formation of the silicon oxide film, stacking and crystallization were performed as in Experiment 1.

As sample 4, a TiN film having a thickness of 50 nm was formed on a glass substrate by sputtering, and then a silicon oxide film having a thickness of 200 nm was formed by sputtering. After the formation of the silicon oxide film, stacking and crystallization were performed as in Experiment 1.

As Sample 5, a sputtering method was used to form Ta on the glass substrate to a thickness of 50 nm, and then a sputtering method was used to form a 200 nm-thick silicon oxide film. After the formation of the silicon oxide film, stacking and crystallization were performed as in Experiment 1.

As Sample 6, a sputtering method was used to form TaN with a thickness of 50 nm, and then a sputtering method was used to form a silicon oxide film with a thickness of 200 nm. After the formation of the silicon oxide film, stacking and crystallization were performed as in Experiment 1.

Samples 1 to 6 were formed in this manner, and an experiment was conducted as to whether or not an adhesive tape was adhered to the layer to be peeled and peeled off. The results are shown in Table 1.

[0056]

[Table 1]

Further, a silicon oxide film, a TiN film, a W film,
The internal stress before and after the heat treatment (550 ° C., 4 hours) was measured for each of the Ta films. The results are shown in Table 2.

[0058]

[Table 2]

The silicon oxide film was measured by forming a film with a thickness of 400 nm on a silicon substrate by a sputtering method. For the TiN film, the W film and the Ta film, the sputtering method was performed on a glass substrate. After forming a film with a thickness of 400 nm by, the internal stress was measured, then a silicon oxide film was laminated as a cap film, and after heat treatment was performed, the cap film was removed by etching and the internal stress was measured again. . In addition, two samples were prepared and measured.

The W film has a compressive stress (about -7 × 10 ⁹ (Dyne / cm ² )) immediately after film formation, but a tensile stress (about 8 × 10 ^{9 to} 9 × 10 ⁹ ) due to heat treatment. (Dyne / c
m ² )), and the peeled state was good. Regarding the TiN film, the stress is almost the same before and after the heat treatment, and the tensile stress (about 3.9 × 10 ^{9 to} 4.5 × 10
⁹ (Dyne / cm ² )) but the film thickness is 50
If the thickness was less than nm, peeling failure occurred. As for the Ta film, the tensile stress (about 5.1 × 10 ⁹ to
9.2 × 10 ⁹ (Dyne / cm ² )), but the compressive stress (about −2 × 10 ⁹ to −7.8 × 10) by heat treatment.
⁹ (Dyne / cm ² )), and was not peeled off in the tape test. The stress of the silicon oxide film was almost the same before and after the heat treatment, and the silicon oxide film still had the compressive stress (about -9.4 × 10 ⁸ to -1.3 × 10 ⁹ (Dyne / cm ² )).

From these results, the peeling phenomenon is related to the adhesiveness due to various factors, but is particularly closely related to the internal stress, and the second material layer having the compressive stress is used, and the tensile stress is obtained after the heat treatment. It can be seen that when the film is used as the first material layer, the layer to be peeled can be peeled off over the entire surface from the substrate. In addition, as the first material layer,
When it is changed by heat treatment or laser light irradiation, it is desirable to use a material whose tensile stress value is larger than that before heat treatment or before laser light irradiation.

[0062]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below.

(Embodiment 1) A typical peeling procedure using the present invention will be briefly described below with reference to FIG.

In FIG. 1A, 10 is a substrate, 11 is a first material layer having a tensile stress, 12 is a material layer having a compressive stress, and 13 is a layer to be peeled.

In FIG. 1A, the substrate 10 can be a glass substrate, a quartz substrate, a ceramic substrate, or the like. Alternatively, a silicon substrate, a metal substrate, or a stainless substrate may be used.

First, as shown in FIG. 1A, the first material layer 11 is formed on the substrate 10. The first material layer 11 may have a compressive stress or a tensile stress immediately after film formation, but an abnormality such as peeling occurs due to heat treatment or laser light irradiation in forming the layer to be peeled. 1 to 1 × 10 ¹⁰ (Dyne / c
It is important to use materials with tensile stress in the m ² ) range. A typical example thereof is a single layer made of an element selected from W, WN, TiN, and TiW, an alloy material or a compound material containing the above element as a main component, or a stacked layer thereof.

Next, the second material layer 12 is formed on the first material layer 11. The second material layer 12 has no abnormalities such as peeling due to heat treatment or laser beam irradiation in forming the layer to be peeled, and has a thickness of 1 to 1 after the layer to be peeled is formed.
It is important to use a material having a compressive stress in the range of × 10 ¹⁰ (Dyne / cm ² ). As a typical example of the second material layer 12, silicon oxide, silicon oxynitride, a metal oxide material, or a stacked layer thereof is given. The second
The material layer 12 may be formed by any film forming method such as a sputtering method, a plasma CVD method, or a coating method.

In the present invention, this second material layer 12
Is the compressive stress, and the first material layer 11 is the tensile stress. Each film thickness is 1 nm to 1000 nm
The internal stress in the first material layer 11 and the internal stress in the second material layer 12 may be adjusted by appropriately setting the above range. In addition, heat treatment and laser light irradiation are performed to cause internal stress in the first material layer 11 and the second material layer 1.
The internal stress at 2 may be adjusted.

Further, although FIG. 1 shows an example in which the first material layer 11 is formed in contact with the substrate 10 for the purpose of simplifying the process, between the substrate 10 and the first material layer 11 is shown. An insulating layer or a metal layer serving as a buffer layer may be provided to improve the adhesion with the substrate 10.

Next, the layer to be peeled 1 is formed on the second material layer 12.
3 is formed. (FIG. 1A) The peeled layer 13 is a TFT.
Various devices represented by (thin film diode, photoelectric conversion element composed of silicon PIN junction, silicon resistance element)
May be a layer containing. In addition, heat treatment can be performed within a range that the substrate 10 can withstand. In the present invention,
Internal stress in the second material layer 12 and the first material layer 1
Even if the internal stresses in No. 1 are different, no film peeling occurs due to the heat treatment in the manufacturing process of the layer to be peeled 13.

Next, the substrate 10 provided with the first material layer 11 is peeled off by a physical means. (Fig. 1
(B) Since the second material layer 12 has a compressive stress and the first material layer 11 has a tensile stress, it can be peeled off with a relatively small force. In addition, here, the layer to be peeled 13
However, when the peeled layer 13 has insufficient mechanical strength, a support (not shown) for fixing the peeled layer 13 is attached. It is preferable to peel after applying.

Thus, the layer to be peeled 13 formed on the second material layer 12 can be separated from the substrate 10.
The state after peeling is shown in FIG.

After peeling, the peeled layer 13 may be attached to a transfer body (not shown).

Further, the present invention can be used in various manufacturing methods of semiconductor devices. In particular, weight reduction can be achieved by using a plastic substrate for the transfer body and the support body.

In the case of manufacturing a liquid crystal display device, the support may be used as the counter substrate, and the support may be adhered to the layer to be peeled using the sealing material as the adhesive. In this case, the element provided in the layer to be peeled has a pixel electrode, and a liquid crystal material is filled between the pixel electrode and the counter substrate. The order of manufacturing the liquid crystal display device is not particularly limited, and a counter substrate as a supporting body may be attached, and after injecting liquid crystal, the substrate may be peeled off and a plastic substrate as a transfer body may be attached, After the pixel electrode is formed, the substrate may be peeled off, a plastic substrate as a first transfer body may be attached, and then an opposite substrate as a second transfer body may be attached.

When a light-emitting device represented by an EL light-emitting device is manufactured, a support is used as a sealing material to prevent entry of substances such as moisture and oxygen, which promote deterioration of the organic compound layer, from the outside. It is preferable to completely shield the light emitting device from the outside. When manufacturing a light emitting device represented by an EL light emitting device, not only the support but also the
Similarly, in the transfer body, it is preferable to sufficiently prevent the entry of substances, such as water and oxygen, which promote the deterioration of the organic compound layer, from the outside. The order of manufacturing the light-emitting device is not particularly limited, and after forming the light-emitting element, a plastic substrate as a support may be attached, the substrate may be peeled off, and a plastic substrate as a transfer member may be attached. After the light emitting element is formed, the substrate may be peeled off, the plastic substrate as the first transfer body may be attached, and then the plastic substrate as the second transfer body may be attached.

Embodiment Mode 2 In this embodiment mode, a peeling procedure for peeling a substrate while providing a base insulating layer in contact with a layer to be peeled and preventing diffusion of impurities from the first material layer and the substrate is described. This is briefly shown using FIG.

In FIG. 2A, 20 is a substrate, 21 is a first material layer having a tensile stress, and 22 is a second material layer having a compressive stress.
Material layers, 23a and 23b are base insulating layers, and 24 is a layer to be peeled.

In FIG. 2A, the substrate 20 can be a glass substrate, a quartz substrate, a ceramic substrate, or the like. Alternatively, a silicon substrate, a metal substrate, or a stainless substrate may be used.

First, as shown in FIG. 2A, the first material layer 21 is formed on the substrate 20. Although the first material layer 21 may have a compressive stress or a tensile stress immediately after the film formation, an abnormality such as peeling occurs due to heat treatment or laser light irradiation in forming the layer to be peeled. 1 to 1 × 10 ¹⁰ (Dyne / c
It is important to use materials with tensile stress in the m ² ) range. A typical example thereof is a single layer made of an element selected from W, WN, TiN, and TiW, an alloy material or a compound material containing the above element as a main component, or a stacked layer thereof.

Next, the second material layer 22 is formed on the first material layer 21. As the second material layer 22, abnormality such as peeling does not occur due to heat treatment or irradiation of laser light in forming the layer to be peeled, and 1 to 1 after the layer to be peeled is formed.
It is important to use a material having a compressive stress in the range of × 10 ¹⁰ (Dyne / cm ² ). As a typical example of the second material layer 22, silicon oxide, silicon oxynitride, a metal oxide material, or a stacked layer thereof is given. The second
The material layer 22 may be formed by any film forming method such as a sputtering method, a plasma CVD method, or a coating method.

In the present invention, this second material layer 22
Is the compressive stress and the first material layer 21 is the tensile stress. Each film thickness is 1 nm to 1000 nm
The internal stress in the first material layer 21 and the internal stress in the second material layer 22 may be adjusted by appropriately setting the above range. In addition, heat treatment and laser light irradiation are performed to cause internal stress in the first material layer 21 and the second material layer 2.
The internal stress at 2 may be adjusted.

Further, although FIG. 2 shows an example in which the first material layer 21 is formed in contact with the substrate 20 for the purpose of simplifying the process, between the substrate 20 and the first material layer 21 is shown. An insulating layer or a metal layer serving as a buffer layer may be provided to improve the adhesion with the substrate 20.

Next, base insulating layers 23a and 23b are formed on the second material layer 22. Here, plasma CVD
Deposition temperature of 400 ° C., source gas SiH ₄ , NH ₃ , N ₂
A silicon oxynitride film 23a (composition ratio S
i = 32%, O = 27%, N = 24%, H = 17%) with a thickness of 50 nm (preferably 10 to 200 nm) is formed.
Silicon oxynitride film 23b made of H ₄ and N ₂ O
(Composition ratio Si = 32%, O = 59%, N = 7%, H = 2
%) Is laminated to a thickness of 100 nm (preferably 50 to 200 nm), but is not particularly limited, and may be a single layer or a laminate of three or more layers.

Next, the layer to be peeled 2 is formed on the base insulating layer 23b.
4 is formed. (Fig. 2 (A))

Such two base insulating layers 23a, 23
In the case of b, in the process of forming the layer to be peeled 24, the first material layer 21 and the second material layer 22, and the substrate 2
The diffusion of impurities from 0 can be prevented. Further, the base insulating layers 23a and 23b can improve the adhesion between the second material layer 22 and the layer to be peeled 24.

In addition, the first material layer 21 and the second material layer 2
When unevenness is formed on the surface by 2, the surface may be flattened before and after forming the base insulating layer. It is preferable to perform flattening because coverage in the layer to be peeled 24 is favorable and element characteristics are easily stabilized when the layer to be peeled 24 including an element is formed. As the flattening treatment, an etch back method or a mechanical chemical polishing method (CMP method) in which a coating film (resist film or the like) is formed and then flattened by etching or the like may be used.

Then, the substrate 20 provided with the first material layer 21 is peeled off by a physical means. (Fig. 2
(B) Since the second material layer 22 has a compressive stress and the first material layer 21 has a tensile stress, it can be peeled off with a relatively small force. Further, here, the layer to be peeled 24
However, when the peeled layer 24 has insufficient mechanical strength, a support (not shown) for fixing the peeled layer 24 is attached. It is preferable to peel after applying.

Thus, the layer to be peeled 24 formed on the base insulating layer 22 can be separated from the substrate 20. The state after peeling is shown in FIG.

After peeling, the peeled layer 24 may be attached to a transfer body (not shown).

Further, the present invention can be applied to various manufacturing methods of semiconductor devices. In particular, weight reduction can be achieved by using a plastic substrate for the transfer body and the support body.

In the case of manufacturing a liquid crystal display device, the supporting body may be an opposite substrate and the sealing material may be used as an adhesive material to adhere the supporting body to the layer to be peeled. In this case, the element provided in the layer to be peeled has a pixel electrode, and a liquid crystal material is filled between the pixel electrode and the counter substrate. The order of manufacturing the liquid crystal display device is not particularly limited, and a counter substrate as a supporting body may be attached, and after injecting liquid crystal, the substrate may be peeled off and a plastic substrate as a transfer body may be attached, After the pixel electrode is formed, the substrate may be peeled off, a plastic substrate as a first transfer body may be attached, and then an opposite substrate as a second transfer body may be attached.

When a light-emitting device represented by an EL light-emitting device is manufactured, a support is used as a sealing material to prevent entry of substances, such as moisture and oxygen, that promote deterioration of the organic compound layer from the outside. It is preferable to completely shield the light emitting device from the outside. When manufacturing a light emitting device represented by an EL light emitting device, not only the support but also the
Similarly, in the transfer body, it is preferable to sufficiently prevent the entry of substances, such as water and oxygen, which promote the deterioration of the organic compound layer, from the outside. The order of manufacturing the light-emitting device is not particularly limited, and after forming the light-emitting element, a plastic substrate as a support may be attached, the substrate may be peeled off, and a plastic substrate as a transfer member may be attached. After the light emitting element is formed, the substrate may be peeled off, the plastic substrate as the first transfer body may be attached, and then the plastic substrate as the second transfer body may be attached.

(Embodiment Mode 3) In addition to Embodiment Mode 1, Embodiment Mode 3 shows an example in which laser light irradiation or heat treatment is performed in order to further promote peeling.

In FIG. 4A, 40 is a substrate, 41 is a first material layer, 42 is a second material layer, and 43 is a layer to be peeled.

The process of forming the layer to be peeled 43 is the same as that of the first embodiment, and therefore its description is omitted.

After the layer 43 to be peeled is formed, laser light irradiation is performed. (FIG. 3A) As the laser light, a gas laser such as an excimer laser, a solid laser such as a YVO ₄ laser or a YAG laser, or a semiconductor laser may be used. Further, the form of laser oscillation may be continuous oscillation or pulse oscillation, and the shape of the laser beam may be linear, rectangular, circular, or elliptical. The wavelength used may be any of the fundamental wave, the second harmonic, and the third harmonic. The scanning method may be any of the vertical direction, the horizontal direction, and the oblique direction, and may be reciprocated.

As the material used for the first material layer 41, it is desirable to use a material that easily absorbs laser light, and a metal material or a metal nitride material such as titanium nitride is preferable. In addition, since the laser light is passed therethrough, the substrate 40
Is a substrate having a light-transmitting property.

Then, the substrate 40 provided with the first material layer 41 is peeled off by a physical means. (Fig. 4
(B) Since the second material layer 42 has a compressive stress and the first material layer 41 has a tensile stress, it can be peeled off with a relatively small force.

By irradiating with laser light, the first
By heating the material layer 41 and the second material layer 42, the mutual internal stress can be changed to promote peeling, and peeling can be performed with a smaller force. In addition, here, an example in which the mechanical strength of the layer to be peeled 43 is assumed to be sufficient is shown, but when the mechanical strength of the layer to be peeled 43 is insufficient, the layer to be peeled 43 is fixed. It is preferable that the support (not shown) is attached and then peeled off.

In this way, the layer to be peeled 43 formed on the second material layer 42 can be separated from the substrate 40.
The state after peeling is shown in FIG.

Further, it is not limited to laser light, and visible light from a light source such as a halogen lamp, infrared rays, ultraviolet rays, microwaves, etc. may be used.

Further, heat treatment in an electric furnace may be used instead of laser light.

Further, a heating treatment or a laser light irradiation treatment may be carried out before the support is adhered or before the support is peeled off by the physical means.

Further, this embodiment can be combined with the second embodiment.

(Embodiment 4) In this embodiment, in addition to Embodiment 1, granular oxide is added to the interface between the first material layer and the second material layer in order to further promote peeling. FIG. 5 shows an example of the arrangement in the.

In FIG. 5A, 50 is a substrate, 51 is a first material layer having a tensile stress, 52a is a granular oxide, and 52a is a particulate oxide.
Reference numeral b is a second material layer having a compressive stress, and 53 is a layer to be peeled.

Since the process of forming the first material layer 51 is the same as that of the first embodiment, it is omitted.

After forming the first material layer 51, a granular oxide 52a is formed. As the granular oxide 52a, a metal oxide material such as ITO (indium oxide-tin oxide alloy) or indium oxide-zinc oxide alloy (In ₂ O ₃ —Zn) is used.
O), zinc oxide (ZnO), or the like may be used.

Next, the second oxide is covered with the granular oxide 52a.
Forming the material layer 52b. Typical examples of the second material layer 52b include silicon oxide, silicon oxynitride,
A metal oxide material may be used. Note that the second material layer 52
For b, any film forming method such as a sputtering method, a plasma CVD method, or a coating method may be used.

Next, the layer to be peeled 53 is formed on the second material layer 52b. (Figure 5 (A))

Then, the substrate 50 provided with the first material layer 51 is peeled off by a physical means. (Fig. 5
(B) Since the second material layer 52b has a compressive stress and the first material layer 51 has a tensile stress, it can be peeled off with a relatively small force.

By providing the granular oxide 52a, the bonding force between the first material layer 51 and the second material layer 52 can be weakened, the mutual adhesiveness can be changed, and peeling can be promoted. It can be peeled off with a smaller force. Further, here, an example is shown in which the mechanical strength of the layer to be peeled 53 is assumed to be sufficient, but when the mechanical strength of the layer to be peeled 53 is insufficient, the layer to be peeled 53 is fixed. It is preferable that the support (not shown) is attached and then peeled off.

In this way, the layer to be peeled 53 formed on the second material layer 52b can be separated from the substrate 50. The state after peeling is shown in FIG.

Further, this embodiment mode can be combined with the second embodiment mode or the third embodiment mode.

The present invention configured as described above will be described in more detail with reference to the following examples.

(Embodiment) [Embodiment 1] An embodiment of the present invention will be described with reference to FIGS. Here, a pixel portion and TFTs (n-channel type TFT and p-type TFT) of a driving circuit provided around the pixel portion are provided on the same substrate.
A method of simultaneously producing channel type TFTs will be described in detail.

First, the first material layer 10 is formed on the substrate 100.
1, a second material layer 102, a base insulating film 103 are formed,
After obtaining the semiconductor film having a crystal structure, the semiconductor layers 104 to 10 are separated into islands by etching into a desired shape.
8 is formed.

As the substrate 100, a glass substrate (# 17
37) is used.

As the first material layer 101, 1 to 1 × 10 ¹⁰ (Dyne / cm ² ) is provided immediately before the peeling step performed later.
The material is not particularly limited as long as it has a tensile stress in the range of, and metal materials (Ti, Al, Ta, W, Mo, Cu, C
r, Nd, Fe, Ni, Co, Zr, Zn, Ru, R
Any one of h, Pd, Os, Ir, Pt, etc., a semiconductor material (eg, Si, Ge, etc.), an insulator material, an organic material, or a stacked layer thereof can be used. Here, a titanium nitride film with a thickness of 100 nm is used by a sputtering method.

As the second material layer 102, −1 to −1 × 10 ¹⁰ (Dyne / c) is provided immediately before the peeling step to be performed later.
The material is not particularly limited as long as it has a compressive stress in the range of m ² ) and metal materials (Ti, Al, Ta, W, Mo, C
u, Cr, Nd, Fe, Ni, Co, Zr, Zn, R
Any one layer of u, Rh, Pd, Os, Ir, Pt, etc., a semiconductor material (eg, Si, Ge, etc.), an insulator material, an organic material, or a stacked layer thereof can be used. A single layer made of a silicon oxide material or a metal oxide material, or a stacked layer thereof may be used. Here, a 200-nm-thick silicon oxide film is used by a sputtering method. The bonding force between the first material layer 101 and the second material layer 102 is strong against heat treatment and film peeling (also called peeling).
However, it can be easily peeled by a physical means in the layer of the second material layer or at the interface.

The base insulating film 103 is formed by plasma CVD at a film forming temperature of 400 ° C. and source gases of SiH ₄ and N 2.
Silicon oxynitride film 103a made of H ₃ and N ₂ O
(Composition ratio Si = 32%, O = 27%, N = 24%, H =
17%) is formed to 50 nm (preferably 10 to 200 nm). Next, after cleaning the surface with ozone water, the oxide film on the surface is removed with dilute hydrofluoric acid (diluted by 1/100). Then, the film formation temperature is 400 ° C. by the plasma CVD method, and the source gas Si
Silicon oxynitride film 103b made of H ₄ and N ₂ O
(Composition ratio Si = 32%, O = 59%, N = 7%, H = 2
%) To have a thickness of 100 nm (preferably 50 to 200 nm), and a semiconductor film having an amorphous structure with a film forming temperature of 300 ° C. and a film forming gas of SiH ₄ by a plasma CVD method without exposing to the atmosphere ( Here, an amorphous silicon film) is formed with a thickness of 54 nm (preferably 25 to 80 nm).

Although the base film 103 has a two-layer structure in this embodiment, it may have a single-layer structure of the insulating film or a structure in which two or more layers are laminated. The material of the semiconductor film is not limited, but is preferably silicon or silicon germanium (Si _x Ge _1-x (X = 0.0001 to 0.0).
2)) Using alloys or the like, known means (sputtering method, LP
It may be formed by a CVD method, a plasma CVD method, or the like. Further, the plasma CVD apparatus may be a single wafer type apparatus or a batch type apparatus. Alternatively, the base insulating film and the semiconductor film may be successively formed in the same film formation chamber without exposure to the air.

Then, after cleaning the surface of the semiconductor film having an amorphous structure, an extremely thin oxide film of about 2 nm is formed on the surface with ozone water. Next, a slight amount of impurity element (boron or phosphorus) is doped to control the threshold value of the TFT. Here, an ion doping method in which diborane (B ₂ H ₆ ) is plasma-excited without mass separation is used, the doping condition is an acceleration voltage of 15 kV, and diborane is hydrogen at 1%.
Flow rate of diluted gas to 30 sccm, dose amount 2 × 10 ¹²
Boron was added to the amorphous silicon film at a rate of / cm ² .

Next, a nickel acetate salt solution containing 10 ppm by weight of nickel is applied by a spinner. Instead of coating, a method of spattering nickel element over the entire surface by a sputtering method may be used.

Then, heat treatment is performed for crystallization to form a semiconductor film having a crystalline structure. For this heat treatment, heat treatment of an electric furnace or irradiation of strong light may be used. When it is performed by heat treatment in an electric furnace, it is 4 to 24 at 500 to 650 ° C
You can do it in time. Here, after the heat treatment for dehydrogenation (500 ° C., 1 hour), the heat treatment for crystallization (5
50 ° C., 4 hours) to obtain a silicon film having a crystal structure. Note that here, although crystallization is performed by heat treatment using a furnace, crystallization may be performed by a lamp annealing apparatus. Although a crystallization technique using nickel as a metal element that promotes crystallization of silicon is used here, other known crystallization techniques such as a solid phase growth method and a laser crystallization method may be used.

Then, after removing the oxide film on the surface of the silicon film having a crystal structure with dilute hydrofluoric acid or the like, the crystallization rate is increased,
Irradiation with the first laser light (XeCl: wavelength 308 nm) for repairing defects left in crystal grains is performed in the air or an oxygen atmosphere. Laser light has a wavelength of 400 nm
The following excimer laser light and the second and third harmonics of a YAG laser are used. In any case, using pulsed laser light with a repetition frequency of about 10 to 1000 Hz,
The laser light may be focused at 100 to 500 mJ / cm ² by an optical system and irradiated with an overlap rate of 90 to 95% to scan the surface of the silicon film. Here, irradiation with the first laser light is performed in the atmosphere with a repetition frequency of 30 Hz and an energy density of 393 mJ / cm ² . Since it is performed in the air or an oxygen atmosphere, an oxide film is formed on the surface by irradiation with the first laser light.

Next, after removing the oxide film formed by the irradiation of the first laser light with dilute hydrofluoric acid, the irradiation of the second laser light is performed in a nitrogen atmosphere or in a vacuum to flatten the surface of the semiconductor film. To do. This laser light (second laser light) is an excimer laser light with a wavelength of 400 nm or less, or Y
The second and third harmonics of the AG laser are used. Second
The energy density of the laser light is larger than that of the first laser light, and preferably 30 to 60 m.
Increase J / cm ² . Here, the repetition frequency 30
Irradiation with the second laser beam was performed at a frequency of Hz and an energy density of 453 mJ / cm ² , and the PV value (Peak to Valley, the difference between the maximum height and the minimum height) of the unevenness on the semiconductor film surface was 5
It becomes 0 nm or less. This PV value is obtained by AFM (atomic force microscope).

Further, in this embodiment, the second laser beam was applied to the entire surface, but the reduction of the off current is caused by the TF of the pixel portion.
Since T is particularly effective, at least the pixel portion may be selectively irradiated.

Next, the surface is treated with ozone water for 120 seconds to form a barrier layer composed of an oxide film having a total thickness of 1 to 5 nm.

Then, a barrier layer is formed on the barrier layer by a sputtering method.
Amorphous silicon containing elemental argon that acts as a tarring site
Forming a film having a thickness of 150 nm. Sputtering of this example
The film forming conditions by the method are as follows: film forming pressure is 0.3 Pa, gas is
(Ar) flow rate is 50 (sccm) and film formation power is 3 kW
And the substrate temperature is 150 ° C. In addition, under the above conditions
Atomic concentration of argon element contained in amorphous silicon film
Is 3 × 10²⁰/ Cm³~ 6 × 10²⁰/ Cm³, The source of oxygen
Child concentration is 1 × 10¹⁹/ Cm³~ 3 x 10¹⁹/ Cm ³And
It Then, using a lamp annealing device at 650 ° C., 3
Gettering is performed by heat treatment for a minute.

Then, the barrier layer is used as an etching stopper to selectively remove the amorphous silicon film containing the argon element which is the gettering site, and then the barrier layer is selectively removed with dilute hydrofluoric acid. In addition, at the time of gettering,
Since nickel tends to move to a region having a high oxygen concentration, it is desirable to remove the barrier layer made of an oxide film after gettering.

Next, after forming a thin oxide film with ozone water on the surface of the obtained silicon film having a crystal structure (also referred to as a polysilicon film), a mask made of a resist is formed and an etching process is performed to a desired shape. The semiconductor layers 104 to 108 separated into islands are formed. After forming the semiconductor layer, the resist mask is removed.

Then, after removing the oxide film with an etchant containing hydrofluoric acid and simultaneously cleaning the surface of the silicon film,
An insulating film containing silicon as its main component is formed to be the gate insulating film 109. In this embodiment, 11 is formed by the plasma CVD method.
A silicon oxynitride film with a thickness of 5 nm (composition ratio Si = 32
%, O = 59%, N = 7%, H = 2%).

Next, as shown in FIG. 6A, the first conductive film 110a having a film thickness of 20 to 100 nm and the second conductive film 1 having a film thickness of 100 to 400 nm are formed on the gate insulating film 109.
And 10b are laminated. In this embodiment, a tantalum nitride film with a thickness of 50 nm and a thickness of 370 are formed on the gate insulating film 109.
nm tungsten films are sequentially stacked.

As the conductive material for forming the first conductive film and the second conductive film, Ta, W, Ti, Mo, Al and Cu are used.
It is formed of an element selected from the above or an alloy material or a compound material containing the above element as a main component. A semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus as the first conductive film and the second conductive film,
You may use AgPdCu alloy. Further, the structure is not limited to the two-layer structure.
A three-layer structure in which a Si) film and a titanium nitride film having a film thickness of 30 nm are sequentially laminated may be used. In the case of a three-layer structure, tungsten nitride may be used instead of tungsten of the first conductive film, or aluminum may be used instead of the aluminum-silicon alloy (Al-Si) film of the second conductive film. An alloy film of titanium (Al—Ti) may be used, or a titanium film may be used instead of the titanium nitride film of the third conductive film.
Further, it may have a single layer structure.

Next, as shown in FIG. 6B, masks 112 to 117 made of resist are formed by a light exposure process, and a first etching process for forming gate electrodes and wirings is performed. The first etching process is performed under the first and second etching conditions. ICP (In
It is advisable to use an inductively coupled plasma etching method. Using ICP etching method,
Etching conditions (electric power applied to the coil type electrode,
By appropriately adjusting the amount of electric power applied to the electrode on the substrate side, the electrode temperature on the substrate side, etc., the film can be etched into a desired tapered shape. As the etching gas, chlorine-based gas represented by Cl ₂ , BCl ₃ , SiCl ₄ , CCl ₄ or the like or CF ₄ , SF ₆ , NF _{3 is used.}
A fluorine-based gas typified by, for example, or O ₂ can be appropriately used.

In this embodiment, 150 W of RF (13.56 MHz) power is also applied to the substrate side (sample stage) to apply a substantially negative self-bias voltage. The electrode area size on the substrate side is 12.5 cm × 12.5 cm, and the coil type electrode area size (here, a quartz disk provided with a coil) is a disk having a diameter of 25 cm. The W film is etched under the first etching condition so that the end portion of the first conductive layer is tapered. The etching rate for W under the first etching condition is 200.39 nm / m
Etching rate for in and TaN is 80.32 nm
/ Min, and the selection ratio of W to TaN is about 2.5.
Is. In addition, depending on the first etching condition, W
The taper angle of is about 26 °. After that, the masks 112 to 117 made of resist are not removed, and the second etching conditions are changed to CF ₄ and Cl _{2 as} etching gas, and the gas flow rate ratio of each is 30/30 (sccm).
With a pressure of 1 Pa, RF (1 W
(3.56 MHz) Power was applied to generate plasma and etching was performed for about 30 seconds. 20 W RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. Under the second etching condition in which CF ₄ and Cl ₂ are mixed, the W film and the TaN film are etched to the same extent. The etching rate for W under the second etching condition is 58.97 nm / min, Ta
The etching rate for N is 66.43 nm / min. Note that in order to perform etching without leaving a residue on the gate insulating film, the etching time may be increased at a rate of about 10 to 20%.

In the first etching process, the shape of the mask made of resist is adjusted to
The edges of the first conductive layer and the second conductive layer are tapered due to the effect of the bias voltage applied to the substrate side. The angle of the tapered portion may be 15 to 45 °.

Thus, the first shape conductive layers 119 to 124 (first conductive layers 119a to 124a and second conductive layer 119b) formed of the first conductive layer and the second conductive layer are formed by the first etching treatment. ~ 124b) are formed. The insulating film 109 serving as a gate insulating film is etched by about 10 to 20 nm, and becomes a gate insulating film 118 in which a region which is not covered with the first shape conductive layers 119 to 124 is thinned.

Then, a second etching process is performed without removing the resist mask. Here, SF ₆ , Cl _2, and O ₂ are used as etching gases, and the gas flow rate ratios thereof are set to 24/12/24 (sccm).
700W RF (13.56MH) on coil type electrode with pressure of Pa
z) Applying electric power to generate plasma for etching 2
It went for 5 seconds. RF of 10W on the substrate side (sample stage)
(13.56MHz) Apply power and apply substantially negative self-bias voltage. In the second etching treatment, the etching rate for W is 227.3 nm / min, the etching rate for TaN is 32.1 nm / min, and
The selection ratio of W with respect to aN is 7.1, and the insulating film 118
Etching rate for SiON is 33.7 nm
/ Min, and the selection ratio of W to SiON is 6.8.
It is 3. As described above, when SF ₆ is used as the etching gas, the selection ratio to the insulating film 118 is high, so that the film loss can be suppressed. In this embodiment, the insulating film 118 is reduced by about 8 nm.

The taper angle of W became 70 ° by this second etching treatment. The second conductive layers 126b to 131b are formed by this second etching process. On the other hand, the first conductive layer is hardly etched,
Of the conductive layers 126a to 131a. Note that the first conductive layers 126a to 131a are the first conductive layers 119a to 12a.
It is almost the same size as 4a. Actually, the width of the first conductive layer is about 0.3 μm as compared with that before the second etching process.
In some cases, the line width may recede by about 0.6 μm, but there is almost no change in size.

Further, instead of the two-layer structure, a three-layer structure in which a tungsten film having a film thickness of 50 nm, an alloy of aluminum and silicon (Al-Si) film having a film thickness of 500 nm, and a titanium nitride film having a film thickness of 30 nm are sequentially laminated is provided. In this case, as the first etching condition of the first etching process, BCl ₃ , Cl ₂ and O ₂ are used as source gases, and the gas flow rate ratio of each is set to 65/10/5 (sccm). The RF power (13.56 MHz) of 300 W is applied to the (sample stage), and the RF power (13.56 MHz) of 450 W is applied to the coil-shaped electrode at a pressure of 1.2 Pa to generate plasma for 117 seconds. Etching may be performed. As the second etching condition of the first etching process, CF ₄ , Cl _2, and O ₂ are used, and the gas flow rate ratio of each is 25/2.
5/10 (sccm), 20W of RF (13.56MHz) power was also applied to the substrate side (sample stage),
RF of 500 W (13.
56MHz) Power is generated and plasma is generated for about 30
It suffices to perform the etching for about a second. BCl ₃ and Cl ₂ are used for the second etching treatment, and the gas flow rate ratio of each is set to 20/60 (sccm) and the substrate side (sample stage)
RF (13.56 MHz) power of 100 W is applied to the coil, and a pressure of 1.2 Pa is applied to the coil-shaped electrode to generate R of 600 W.
It suffices to apply F (13.56 MHz) power to generate plasma and perform etching.

Next, after removing the resist mask, a first doping process is performed to obtain the state of FIG. 6 (D). The doping treatment may be performed by an ion doping method or an ion implantation method. The conditions of the ion doping method are a dose amount of 1.5 × 10 ¹⁴ atoms / cm ² and an acceleration voltage of 60.
~ 100 keV. Phosphorus (P) or arsenic (As) is typically used as the impurity element imparting n-type. In this case, the first conductive layer 126 and the second conductive layer 126
˜130 serve as a mask for the impurity element imparting n-type, and the first impurity regions 132 to 136 are formed in a self-aligned manner. 1 × is included in the first impurity regions 132 to 136.
An impurity element imparting n-type is added within a concentration range of 10 ¹⁶ to 1 × 10 ¹⁷ / cm ³ . Here, a region having the same concentration range as the first impurity region is also called an n ⁻ region.

In this embodiment, the first doping process is performed after removing the resist mask. However, the first doping process may be performed without removing the resist mask.

Next, as shown in FIG. 7A, masks 137 to 139 made of resist are formed and a second doping process is performed. A mask 137 is a mask that protects a channel formation region of a semiconductor layer that forms a p-channel TFT of a driver circuit and a peripheral region thereof, and a mask 138 is a semiconductor layer that forms one of n-channel TFTs of the driver circuit. The mask is a mask that protects the channel formation region and its peripheral region, and the mask 139 is a mask that protects the channel formation region of the semiconductor layer forming the TFT of the pixel portion, the peripheral region thereof, and the region to be the storage capacitor.

The condition of the ion doping method in the second doping process is that the dose amount is 1.5 × 10 ¹⁵ atoms / cm ² and the accelerating voltage is 60 to 100 keV, and phosphorus (P) is doped. Here, the second conductive layers 126 b to 1
An impurity region is formed in each semiconductor layer in a self-aligned manner using 28b as a mask. Of course, it is not added to the region covered with the masks 137 to 139. In this way, the second impurity regions 140 to 142 and the third impurity region 144 are formed. 1 × 10 ²⁰ is formed in the second impurity regions 140 to 142.
An impurity element imparting n-type is added in a concentration range of 1 × 10 ²¹ / cm ³ . Here, a region having the same concentration range as the second impurity region is also called an n ⁺ region.

Further, the third impurity region is formed at a concentration lower than that of the second impurity region by the first conductive layer and is 1 × 1.
An impurity element imparting n-type is added in the concentration range of 0 ¹⁸ to 1 × 10 ¹⁹ / cm ³ . Note that the third impurity region has a concentration gradient in which the impurity concentration increases toward the end portion of the tapered portion because doping is performed by passing through the portion of the first conductive layer having a tapered shape. . Here, a region having the same concentration range as the third impurity region is also called an n ⁻ region. Further, in the region covered with the masks 138 and 139, the impurity element is not added in the second doping treatment,
The first impurity regions 146 and 147 are formed.

Next, a mask 137 made of resist is used.
After removing 139, a mask 1 made of a new resist
48 to 150 are formed and a third doping process is performed as shown in FIG.

In the drive circuit, by the third doping process, a fourth impurity element imparting p-type conductivity is added to the semiconductor layer forming the p-channel TFT and the semiconductor layer forming the storage capacitor. Impurity region 151,
152 and fifth impurity regions 153 and 154 are formed.

In addition, in the fourth impurity regions 151 and 152,
Is 1 × 10²⁰~ 1 x 10^{twenty one}/cm³P-type in the concentration range of
The impurity element to be added is added. In addition, the fourth failure
Phosphorus (P) was added to the pure material regions 151 and 152 in the previous process.
Added region (n^-Region), but the
Conductive because the concentration of pure element is 1.5 to 3 times that of pure element
The mold is p-type. Here, the fourth impurity region and
P in the same concentration range ⁺Also called a region.

The fifth impurity regions 153 and 154 are formed in regions overlapping the taper portion of the second conductive layer 127a, and have a concentration range of 1 × 10 ¹⁸ to 1 × 10 ²⁰ / cm ^3. An impurity element imparting p-type is added. Here, a region having the same concentration range as the fifth impurity region is also called ap ⁻ region.

By the steps up to this point, each semiconductor layer has n
An impurity region having a conductivity type of p-type or p-type is formed. The conductive layers 126 to 129 serve as the gate electrodes of the TFT. In addition, the conductive layer 130 serves as one electrode which forms a storage capacitor in the pixel portion. Further, the conductive layer 131 forms a source wiring in the pixel portion.

Next, an insulating film (not shown) is formed to cover almost the entire surface. In this embodiment, a silicon oxide film having a film thickness of 50 nm is formed by the plasma CVD method. Of course, this insulating film is not limited to the silicon oxide film, and another insulating film containing silicon may be used as a single layer or a laminated structure.

Then, a step of activating the impurity element added to each semiconductor layer is performed. This activation step is performed by a rapid thermal annealing method (RTA method) using a lamp light source, a method of irradiating the back surface with a YAG laser or an excimer laser, a heat treatment using a furnace, or a combination of these methods. By the method.

In this embodiment, an example in which the insulating film is formed before the activation is shown, but after the activation is performed,
It may be a step of forming an insulating film.

Next, a step of hydrogenating the semiconductor layer is performed by forming a first interlayer insulating film 155 made of a silicon nitride film and performing heat treatment (heat treatment at 300 to 550 ° C. for 1 to 12 hours). (FIG. 7C) This step is a step of terminating the dangling bond of the semiconductor layer by hydrogen contained in the first interlayer insulating film 155. The semiconductor layer can be hydrogenated regardless of the presence of an insulating film (not shown) made of a silicon oxide film. However, in this embodiment, since the material containing aluminum as the main component is used as the second conductive layer, it is important to set the heat treatment conditions that the second conductive layer can withstand in the hydrogenation step. Plasma hydrogenation (using hydrogen excited by plasma) may be performed as another means of hydrogenation.

Next, a second interlayer insulating film 156 made of an organic insulating material is formed on the first interlayer insulating film 155. In this embodiment, an acrylic resin film having a thickness of 1.6 μm is formed. Next, a contact hole reaching the source wiring 131, a contact hole reaching the conductive layers 129 and 130, and a contact hole reaching each impurity region are formed. In this embodiment, a plurality of etching processes are sequentially performed.
In this embodiment, after etching the second interlayer insulating film using the first interlayer insulating film as an etching stopper, the first interlayer insulating film is etched using an insulating film (not shown) as an etching stopper, and then the insulating film (illustrated). Not etched).

After that, wirings and pixel electrodes are formed by using Al, Ti, Mo, W or the like. As a material of these electrodes and pixel electrodes, it is desirable to use a material having excellent reflectivity such as a film containing Al or Ag as a main component, or a laminated film thereof. Thus, the source or drain electrodes 157 to 162, the gate wiring 164, the connection wiring 163,
The pixel electrode 165 is formed.

As described above, the n-channel TFT 20
1, p-channel TFT 202, n-channel TFT 2
The pixel portion 207 including the driver circuit 206 including the pixel 03, the pixel TFT 204 including the n-channel TFT, and the storage capacitor 205 can be formed over the same substrate. (FIG. 8) In this specification, such a substrate is referred to as an active matrix substrate for convenience. In this specification, such a substrate is referred to as an active matrix substrate for convenience.

In the pixel portion 207, the pixel TFT 204
The (n-channel TFT) has a channel formation region 169,
A first impurity region (n ⁻ region) 147 formed outside the conductive layer 129 forming the gate electrode and a second impurity region (n ⁻ ) functioning as a source region or a drain region (n
⁺ Area) 142, 171. Further, a fourth impurity region 152 and a fifth impurity region 154 are formed in the semiconductor layer functioning as one electrode of the storage capacitor 205. The storage capacitor 205 is formed of the second electrode 130 and the semiconductor layers 152, 154, and 170 using the insulating film (the same film as the gate insulating film) 118 as a dielectric.

In the driving circuit 206, the n-channel TFT 201 (first n-channel TFT) is the channel forming region 166 and the conductive layer 12 forming the gate electrode.
Third impurity region (n
^- has a second impurity region (n ⁺ region) 140 functioning as a region) 144 and a source region or a drain region.

In the drive circuit 206, the p-channel TFT 202 has a channel formation region 167 and a fifth impurity region (p ⁻ region) 153 overlapping a part of the conductive layer 127 forming the gate electrode with an insulating film interposed therebetween. A fourth impurity region (p
⁺ Area) 151.

In the drive circuit 206, the n-channel TFT 203 (second n-channel TFT) has the channel forming region 168 and the conductive layer 1 forming the gate electrode.
A first impurity region (n ⁻ region) 146 and a second impurity region (n ⁺ region) 141 functioning as a source region or a drain region are provided outside 28.

A drive circuit 206 may be formed by appropriately combining these TFTs 201 to 203 to form a shift register circuit, a buffer circuit, a level shifter circuit, a latch circuit, and the like. For example, when forming a CMOS circuit, an n-channel TFT 201 and a p-channel TFT
It may be formed by connecting 202 complementarily.

In particular, for a buffer circuit having a high driving voltage,
The structure of the n-channel TFT 203 is suitable for the purpose of preventing deterioration due to the hot carrier effect.

For a circuit in which reliability is the highest priority,
The structure of the n-channel TFT 201 having the GOLD structure is suitable.

Since the reliability can be improved by improving the flatness of the surface of the semiconductor film, G
In the TFT having the OLD structure, sufficient reliability can be obtained even if the area of the impurity region overlapping the gate electrode and the gate insulating film is reduced. Specifically, in the GOLD structure TFT, sufficient reliability can be obtained even if the size of the gate electrode tapered portion is reduced.

Further, in the GOLD structure TFT, the parasitic capacitance increases as the gate insulating film becomes thinner, but if the size of the tapered portion of the gate electrode (first conductive layer) is reduced to reduce the parasitic capacitance, f characteristic (frequency characteristic)
Also, the TFT can be operated at a higher speed, and the TFT has sufficient reliability.

Also in the pixel TFT of the pixel portion 207, the reduction of the off current and the variation can be realized by the irradiation of the second laser light.

In this embodiment, an example of manufacturing an active matrix substrate for forming a reflection type display device is shown. However, when the pixel electrode is formed of a transparent conductive film, the number of photomasks is increased by one, but it is transparent. Mold display device can be formed.

Although a glass substrate is used in this embodiment, it is not particularly limited, and a quartz substrate, a semiconductor substrate, a ceramics substrate, or a metal substrate can be used.

After the state of FIG. 8 is obtained, if the layer including the TFT (layer to be peeled) provided on the second material layer 102 has sufficient mechanical strength, the substrate 100 can be peeled off. Good. Since the second material layer 102 has a compressive stress and the first material layer 101 has a tensile stress, the second material layer 102 can be peeled off with a relatively small force. In this example, since the mechanical strength of the layer to be peeled is insufficient, it is preferable to peel the layer to be peeled after attaching a support (not shown) for fixing the layer to be peeled.

[Embodiment 2] In this embodiment, a process of peeling the substrate 100 from the active matrix substrate manufactured in Embodiment 1 and adhering a plastic substrate to manufacture an active matrix type liquid crystal display device will be described below. To do. FIG. 9 is used for the description.

In FIG. 9A, 400 is a substrate, and 40 is
Reference numeral 1 is a first material layer, 402 is a second material layer, 403 is a base insulating layer, 404a is an element of the driver circuit 413, and 404b.
The elements 404b and 405 of the pixel portion 414 are pixel electrodes. Here, the element refers to a semiconductor element (typically a TFT) or a MIM element used as a switching element of a pixel in an active matrix type liquid crystal display device. The active matrix substrate shown in FIG. 9A is a simplified version of the active matrix substrate shown in FIG. 8, and the substrate 100 in FIG. 8 corresponds to the substrate 400 in FIG. 9A. There is. Similarly, 4 in FIG. 9 (A)
01 is 101 in FIG. 8 and 402 in FIG. 9A is
Reference numeral 102 in FIG. 8, 403 in FIG. 9A is 103, and 404a in FIG. 9A is 201 in FIG.
And 202, 404b in FIG. 9A is 2 in FIG.
04, 405 in FIG. 9A corresponds to 165 in FIG.

First, according to the first embodiment, after obtaining the active matrix substrate in the state of FIG. 8, the alignment film 406a is formed on the active matrix substrate of FIG. 8 and rubbing treatment is performed. In this example, before forming the alignment film, a columnar spacer (not shown) for holding the space between the substrates was formed at a desired position by patterning an organic resin film such as an acrylic resin film. Further, spherical spacers may be dispersed over the entire surface of the substrate instead of the columnar spacers.

Next, a counter substrate to be the support 407 is prepared. The counter substrate is provided with a color filter (not shown) in which a colored layer and a light shielding layer are arranged corresponding to each pixel. Further, a light-shielding layer was also provided in the drive circuit portion. A flattening film (not shown) covering the color filter and the light shielding layer was provided. Next, a counter electrode 408 made of a transparent conductive film was formed in the pixel portion over the planarization film, an alignment film 406b was formed over the entire surface of the counter substrate, and a rubbing treatment was performed.

Then, the active matrix substrate 400 on which the pixel portion and the driving circuit are formed and the support 407 are attached to each other with a sealing material which becomes an adhesive layer 409. A filler is mixed in the sealing material, and the two substrates are bonded to each other with a uniform interval by the filler and the columnar spacer. After that, a liquid crystal material 410 is injected between both substrates and completely sealed by a sealant (not shown). A known liquid crystal material may be used as the liquid crystal material 410 (FIG. 9B).

Then, the substrate 400 provided with the first material layer 401 is peeled off by a physical means. (Fig. 9
(C) Since the second material layer 402 has a compressive stress and the first material layer 401 has a tensile stress, it can be peeled off with a relatively small force.

Next, an adhesive layer 411 made of epoxy resin or the like.
It is attached to the transfer body 412 by. In this embodiment, the transfer member 412 is made of a plastic film substrate to reduce the weight.

In this way, a flexible active matrix type liquid crystal display device is completed. Then, if necessary, the flexible substrate 412 or the counter substrate is cut into a desired shape. Further, a polarizing plate (not shown) and the like are appropriately provided by using a known technique. Then, an FPC (not shown) was attached using a known technique.

[Embodiment 3] In Embodiment 2, an example was shown in which a counter substrate as a support was attached, a liquid crystal was injected, and then the substrate was peeled off to attach a plastic substrate as a transfer body. In the embodiment, after forming the active matrix substrate shown in FIG. 8, the substrate is peeled off, and the plastic substrate as the first transfer body and the plastic substrate as the second transfer body are attached. Figure 10 for explanation
To use.

In FIG. 10A, reference numeral 500 denotes a substrate, 5
01 is a first material layer, 502 is a second material layer, 503 is a base insulating layer, 504a is an element of the driving circuit 514, 504
Reference numeral b denotes elements 504b and 505 of the pixel portion 515, which are pixel electrodes. The active matrix substrate shown in FIG. 10A is a simplified version of the active matrix substrate shown in FIG. 8, and the substrate 100 in FIG. 8 is shown in FIG.
It corresponds to the substrate 500 inside. Similarly, 501 in FIG. 10A corresponds to 101 in FIG. 8 and 50 in FIG.
2 is 102 in FIG. 8 and 503 in FIG.
8 is the same as 103 in FIG. 8 and 504a in FIG.
Numerals 201 and 202 indicate 504b in FIG.
8 corresponds to 204 in FIG. 8 and 505 in FIG. 10A corresponds to 165 in FIG.

First, according to Example 1, after obtaining the active matrix substrate in the state of FIG. 8, the substrate 500 provided with the first material layer 501 is peeled off by a physical means. (FIG. 10B) Since the second material layer 502 has a compressive stress and the first material layer 501 has a tensile stress, the second material layer 502 can be peeled off with a relatively small force.

Next, an adhesive layer 506 made of epoxy resin or the like.
Then, it is attached to the transfer body 507 (first transfer body). In this embodiment, the transfer body 507 is made of a plastic film substrate to reduce the weight. (Figure 10 (C))

Then, an alignment film 508a is formed and a rubbing process is performed. In this example, before forming the alignment film, a columnar spacer (not shown) for holding the space between the substrates was formed at a desired position by patterning an organic resin film such as an acrylic resin film. Further, spherical spacers may be dispersed over the entire surface of the substrate instead of the columnar spacers.

Next, a counter substrate to be the support 510 (second transfer body) is prepared. This counter substrate has a colored layer,
A color filter (not shown) in which the light shielding layer is arranged corresponding to each pixel is provided. Further, a light-shielding layer was also provided in the drive circuit portion. A flattening film (not shown) covering the color filter and the light shielding layer was provided. Next, a counter electrode 509 made of a transparent conductive film was formed on the flattening film in the pixel portion, an alignment film 508b was formed over the entire surface of the counter substrate, and rubbing treatment was performed.

Then, the plastic film substrate 507 to which the pixel portion and the driving circuit are adhered and the support body 510 are attached to each other with a sealing material which becomes an adhesive layer 512. (Fig. 10
(D) The filler is mixed in the sealing material, and the filler and the columnar spacers provide a uniform spacing.
The substrates are bonded together. After that, a liquid crystal material 513 is injected between both substrates and completely sealed with a sealant (not shown). (FIG. 10D) A known liquid crystal material may be used as the liquid crystal material 513.

In this way, a flexible active matrix type liquid crystal display device is completed. Then, if necessary, the flexible substrate 507 or the counter substrate is cut into a desired shape. Further, a polarizing plate (not shown) and the like are appropriately provided by using a known technique. Then, an FPC (not shown) was attached using a known technique.

[Embodiment 4] The structure of the liquid crystal module obtained in Embodiment 2 or Embodiment 3 will be described with reference to the top view of FIG. The substrate 412 in the second embodiment or the substrate 507 in the third embodiment corresponds to the substrate 301.

A pixel portion 304 is arranged at the center of the substrate 301. A source signal line driver circuit 302 for driving a source signal line is arranged above the pixel portion 304. A gate signal line driver circuit 303 for driving a gate signal line is arranged on the left and right of the pixel portion 304. In the example shown in this embodiment, the gate signal line drive circuit 303 is arranged symmetrically with respect to the pixel portion, but this may be arranged on only one side, and the designer may consider the substrate size of the liquid crystal module or the like. May be selected as appropriate. However, considering the operation reliability and drive efficiency of the circuit,
The symmetrical arrangement shown in is preferable.

Input of a signal to each drive circuit is performed by a flexible printed circuit (FPC) 3
It starts from 05. The FPC 305 opens a contact hole in the interlayer insulating film and the resin film so as to reach the wiring arranged up to a predetermined position on the substrate 301, and
After forming 09, it is pressure-bonded through an anisotropic conductive film or the like. In this embodiment, the connection electrode is made of ITO.

A sealant 307 is applied to the periphery of the driving circuit and the pixel portion along the outer circumference of the substrate, and a constant gap is formed by a spacer 310 formed on the film substrate in advance (a gap between the substrate 301 and the counter substrate 306). The counter substrate 306 is attached while maintaining After that, a liquid crystal material is injected from a portion where the sealant 307 is not applied and is sealed with a sealant 308. The liquid crystal module is completed through the above steps.

Although an example in which all the drive circuits are formed on the film substrate is shown here, several ICs may be used as a part of the drive circuits.

Further, this embodiment can be freely combined with the first embodiment.

[Embodiment 5] In Embodiment 1, an example of a reflection type display device in which the pixel electrode is formed of a reflective metal material is shown, but in this embodiment, the pixel electrode is made of a light-transmitting conductive material. An example of a transmissive display device formed of a film is shown.

Example 1 up to the step of forming the interlayer insulating film
Since it is the same as, it is omitted here. After the interlayer insulating film is formed according to Example 1, the pixel electrode 601 made of a light-transmitting conductive film is formed. As the light-transmitting conductive film, ITO (indium oxide-tin oxide alloy), indium oxide-zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (ZnO), or the like may be used.

After that, a contact hole is formed in the interlayer insulating film 600. Next, the connection electrode 6 overlapping the pixel electrode
02 is formed. The connection electrode 602 is connected to the drain region through a contact hole. At the same time as the connection electrode, the source electrode or drain electrode of another TFT is also formed.

Although an example in which all the driving circuits are formed on the substrate is shown here, several ICs may be used as a part of the driving circuits.

The active matrix substrate is formed as described above. Using this active matrix substrate, after peeling off the substrate, a film (not shown) having a compressive stress and a plastic substrate are bonded together to produce a liquid crystal module according to Examples 2 to 4, and a backlight 604,
By providing the light guide plate 605 and covering it with the cover 606, an active matrix type liquid crystal display device as shown in the partial cross-sectional view of FIG. 12 is completed. The cover and the liquid crystal module are attached to each other with an adhesive or an organic resin. Also,
When the plastic substrate and the counter substrate are attached to each other, they may be surrounded by a frame and filled with an organic resin between the frame and the substrate for adhesion. Further, since it is a transmissive type, the polarizing plate 603 is attached to both the plastic substrate and the counter substrate.

This embodiment can be freely combined with Embodiments 1 to 4.

[Embodiment 6] In this embodiment, an example of manufacturing a light emitting display device including an EL (Electro Luminescence) element formed on a plastic substrate is shown in FIG.

In FIG. 13A, 700 is a substrate and 7
01 is a first material layer, 702 is a second material layer, 703 is a base insulating layer, 704a is an element of the driving circuit 711, 704
Reference numerals b and 704c are elements of the pixel portion 712, and 705 is an organic light emitting device. Here, the element refers to a semiconductor element (typically a TFT) used as a switching element of a pixel in an active matrix light emitting device, a MIM element, an organic light emitting element, or the like. Then, an interlayer insulating film 706 is formed so as to cover these elements. The surface of the interlayer insulating film 706 after film formation is preferably flatter. The interlayer insulating film 7
06 does not necessarily have to be provided.

701 to 70 provided on the substrate 700
3 may be formed according to any one of the second to fourth embodiments.

These elements (704a, 704b, 70)
4c) is included in the n-channel TFT 2 of the first embodiment.
01, it may be manufactured according to the p-channel TFT 202 of the first embodiment.

The organic light emitting element 705 is a layer containing an organic compound (organic light emitting material) capable of obtaining luminescence generated by applying an electric field (hereinafter,
An organic light emitting layer), an anode layer, and a cathode layer. Luminescence in an organic compound includes light emission (fluorescence) when returning from a singlet excited state to a ground state and light emission when returning to a ground state from a triplet excited state (phosphorescence). One of the above-mentioned light emissions may be used, or both of the light emissions may be used. In the present specification, all layers formed between the anode and the cathode of the organic light emitting device are defined as the organic light emitting layer. The organic light emitting layer specifically includes a light emitting layer, a hole injection layer, an electron injection layer, a hole transport layer, an electron transport layer, and the like. Basically, the organic light emitting device has a structure in which an anode / a light emitting layer / a cathode are laminated in this order. In addition to this structure,
It may have a structure in which an anode / hole injection layer / light emitting layer / cathode or an anode / hole injection layer / light emitting layer / electron transport layer / cathode are laminated in this order.

When an organic compound film composed of a plurality of functional regions is formed between the anode and the cathode of the light emitting element, the first functional region and the second functional region and the second functional region are not formed in the conventional laminated structure having a clear interface. It is possible to form a structure having a mixed region composed of both the material forming the first functional region and the material forming the second functional region between the first and second functional regions.
In addition, the case where a material capable of converting triplet excitation energy into luminescence is added to the mixed region as a dopant is also included. In forming the mixed region, the mixed region may have a concentration gradient. It is considered that by applying such a structure, the energy barrier existing between the functional regions is reduced as compared with the conventional structure, and the carrier injection property is improved. That is, the energy barrier between the functional regions is relaxed by forming the mixed region. Therefore,
It is possible to reduce the driving voltage and prevent the brightness from decreasing.

When the state shown in FIG. 13A is obtained by the above method, the support 708 is attached by the adhesive layer 707. (FIG. 13B) In this embodiment, a plastic substrate is used as the support 708. Specifically, as the support, a resin substrate having a thickness of 10 μm or more, such as PES (polyethylene monkey file), PC (polycarbonate),
PET (polyethylene terephthalate) or PEN
(Polyethylene naphthalate) can be used.
In addition, when it is located on the observer side (user side of the light emitting device) when viewed from the organic light emitting element, the support 708 and the adhesive layer 70 are provided.
7 needs to be a material that transmits light.

Then, the substrate 700 provided with the first material layer 701 is peeled off by a physical means. (Fig. 1
3 (C)) the second material layer 702 has compressive stress, and
Since the material layer 701 of 1 has tensile stress, it can be peeled off with a relatively small force.

Next, an adhesive layer 709 made of epoxy resin or the like.
To be attached to the transfer body 710. (FIG. 13D) In this embodiment, the transfer member 710 is made of a plastic film substrate to reduce the weight.

Thus, the flexible support 708,
It is possible to obtain a flexible light emitting device sandwiched between the transfer bodies 710 having flexibility. The support 70
8 and the transfer member 710 are made of the same material, the coefficients of thermal expansion become equal to each other, so that it is possible to reduce the influence of stress strain due to temperature change.

Then, if necessary, the flexible support member 708 and the flexible transfer member 610 are divided into desired shapes. Then, an FPC (not shown) was attached using a known technique.

[Embodiment 7] In Embodiment 6, an example was shown in which after the support was attached, the substrate was peeled off and the plastic substrate as the transfer body was attached. However, in this embodiment, the substrate is peeled off. After that, a plastic substrate as a first transfer body and a plastic substrate as a second transfer body are attached to each other to manufacture an EL (a light emitting display device including an element. An example is shown in FIG. .

In FIG. 14A, reference numeral 800 denotes a substrate, and 8
01 is a first material layer, 802 is a second material layer, 803 is a base insulating layer, 804a is an element of the driving circuit 811, and 804
Reference numerals b and 804c are elements of the pixel portion 812, and 805 is an organic light emitting device. Here, the element refers to a semiconductor element (typically a TFT) used as a switching element of a pixel in an active matrix light emitting device, a MIM element, an organic light emitting element, or the like. Then, the interlayer insulating film 8 is formed so as to cover these elements.
06 is formed. The interlayer insulating film 806 preferably has a flatter surface after film formation. The interlayer insulating film 80
6 does not necessarily have to be provided.

801 to 80 provided on the substrate 800
3 may be formed according to any one of the second to fourth embodiments.

These elements (804a, 804b, 80)
4c) is included in the n-channel TFT 2 of the first embodiment.
01, it may be manufactured according to the p-channel TFT 202 of the first embodiment.

When the state shown in FIG. 14A is obtained by the above method, the substrate 800 provided with the first material layer 801 is provided.
Is peeled off by physical means. (FIG. 14B) Second
Material layer 802 has compressive stress, and the first material layer 801
Has a tensile stress, it can be peeled off with a relatively small force.

Next, an adhesive layer 809 made of epoxy resin or the like.
It is attached to a transfer body (first transfer body) 810 by. In this embodiment, the transfer body 810 is made of a plastic film substrate to reduce the weight.

Next, a base material (second transfer member) 808 is attached by an adhesive layer 807. (FIG. 14C) In this embodiment, a plastic substrate is used as the base material 808.
Specifically, as the transfer body 810 and the base material 808, a resin substrate having a thickness of 10 μm or more, for example, PES (polyethylene monkey file), PC (polycarbonate), PET
(Polyethylene terephthalate) or PEN (polyethylene naphthalate) can be used. In addition,
Observer side as seen from the organic light emitting element (user side of light emitting device)
When located at, the base material 808 and the adhesive layer 807 need to be materials that transmit light.

Thus, a flexible light emitting device sandwiched between the flexible base material 808 and the flexible transfer body 810 can be obtained. When the base material 808 and the transfer body 810 are made of the same material, the thermal expansion coefficients become equal to each other, so that it is possible to reduce the influence of stress strain due to temperature change.

Then, if necessary, the flexible base material 808 and the flexible transfer body 810 are cut into desired shapes. Then, an FPC (not shown) was attached using a known technique.

[Embodiment 8] The construction of the EL module obtained in Embodiment 6 or 7 will be described with reference to the top view and sectional view of FIG. Transfer member 81 in Example 7
0 corresponds to the film substrate 900.

FIG. 15A is a top view showing the EL module, and FIG. 15B is a sectional view taken along the line AA ′ in FIG. 15A. In FIG. 15A, a flexible film substrate 900 (for example, a plastic substrate or the like)
A film 901 (for example, a silicon oxide film) having a compressive stress is provided in the above, and a pixel portion 902, a source side driver circuit 904, and a gate side driver circuit 903 are formed thereover. These pixel portion and drive circuit can be obtained according to the first and second embodiments.

Reference numeral 918 denotes an organic resin, 919 denotes a protective film, the pixel portion and the driving circuit portion are covered with the organic resin 918, and the organic resin is covered with the protective film 919. Further, it is sealed with a cover material 920 using an adhesive. The cover material 920 is adhered as a support before peeling. Cover material 92 to withstand deformation due to heat or external force
0 is preferably made of the same material as the film substrate 900, for example, a plastic substrate, which is processed into the concave shape (depth 3 to 10 μm) shown in FIG. 15B. It is desirable to further process to form a recess (depth of 50 to 200 μm) in which the desiccant 921 can be installed.
Further, in the case of manufacturing an EL module by multi-chambering, the substrate and the cover material may be bonded together and then cut using a CO ₂ laser or the like so that the end faces are aligned.

Reference numeral 908 denotes wiring for transmitting a signal input to the source side driving circuit 904 and the gate side driving circuit 903, and a video signal or a clock signal from an FPC (flexible printed circuit) 909 which is an external input terminal. To receive. Although only the FPC is shown here, a printed wiring board (P
WB) may be attached. The light emitting device in this specification includes not only the light emitting device main body but also the FPC.
Alternatively, the state in which the PWB is attached is also included.

Next, the sectional structure will be described with reference to FIG. A film 901 having thermal conductivity is provided on the film substrate 900, an insulating film 910 is provided thereon, and a pixel portion 902 and a gate side driver circuit 903 are formed above the insulating film 910. 902 is formed by a plurality of pixels including a current control TFT 911 and a pixel electrode 912 electrically connected to its drain. The gate side drive circuit 903 is an n-channel TFT 91.
CMO combining 3 and p-channel TFT 914
It is formed using an S circuit.

These TFTs (911, 913, 914)
Are included) according to the n-channel TFT of the first embodiment and the p-channel TFT of the first embodiment.

Note that after the pixel portion 902, the source side driver circuit 904, and the gate side driver circuit 903 are formed over the same substrate in accordance with Embodiments 1 and 2, a support body (cover material here) is formed according to the embodiment. ), The substrate (not shown) is peeled off, and then the film substrate 900 is attached.

When the cover material 920 is formed into a concave shape as shown in FIG. 15B, the wiring lead-out terminal portion (connection portion) is insulated when the cover material 920 serving as a support is adhered and then peeled off. Since only the film 910 is formed and the mechanical strength becomes weak, it is desirable to attach the FPC 909 before peeling and further fix it with the organic resin 922.

The insulating film provided between the TFT and the organic light emitting element not only blocks the diffusion of impurity ions such as alkali metal ions and alkaline earth metal ions, but also actively blocks the alkali metal ions and alkaline earth metal ions. A material that adsorbs impurity ions such as ions is preferable, and a material that can withstand the subsequent process temperature is suitable. As an example of a material satisfying these conditions, a silicon nitride film containing a large amount of fluorine can be given. The concentration of fluorine contained in the silicon nitride film is 1 × 10 ¹⁹ / cm ³ or more, and preferably the composition ratio of fluorine in the silicon nitride film is 1 to 5%. Fluorine in the silicon nitride film is combined with alkali metal ions, alkaline earth metal ions, etc. and adsorbed in the film. Further, as another example, an organic resin film containing fine particles of an antimony (Sb) compound, a tin (Sn) compound, or an indium (In) compound that adsorbs alkali metal ions, alkaline earth metal ions, and the like, for example, antimony pentoxide. An organic resin film containing fine particles (Sb ₂ O ₅ .nH ₂ O) is also included. The organic resin film contains fine particles having an average particle size of 10 to 20 nm and has a very high light transmittance. The antimony compound represented by the antimony pentoxide fine particles easily adsorbs impurity ions such as alkali metal ions and alkaline earth metal ions.

The pixel electrode 912 functions as a cathode of a light emitting element (organic light emitting element). Further, banks 915 are formed on both ends of the pixel electrode 912, and an organic compound layer 916 and an anode 917 of the light emitting element are formed on the pixel electrode 912.

As the organic compound layer 916, an organic compound layer (a layer for emitting light and moving carriers therefor) may be formed by freely combining a light emitting layer, a charge transport layer or a charge injection layer. For example, a low molecular weight organic compound material or a high molecular weight organic compound material may be used. As the organic compound layer 916, a thin film formed of a light emitting material (singlet compound) which emits light (fluorescence) by singlet excitation or a thin film formed of a light emitting material (triplet compound) which emits (phosphorescence) by triplet excitation is used. it can. Further, it is also possible to use an inorganic material such as silicon carbide for the charge transport layer and the charge injection layer. Known materials can be used as these organic materials and inorganic materials.

The anode 917 also functions as a wiring common to all pixels, and is electrically connected to the FPC 909 via the connection wiring 908. Further, all the elements included in the pixel portion 902 and the gate side driver circuit 903 are covered with the anode 917, the organic resin 918, and the protective film 919.

As the organic resin 918, it is preferable to use a material which is transparent or semitransparent to visible light as much as possible. In addition, it is desirable that the organic resin 918 be a material that does not transmit moisture and oxygen as much as possible.

After the light emitting element is completely covered with the organic resin 918, it is preferable to provide a protective film 919 on the surface (exposed surface) of the organic resin 918 as shown in FIG. 15 at least. Further, a protective film may be provided on the entire surface including the back surface of the substrate. Here, it is necessary to take care so that the protective film is not formed on the portion where the external input terminal (FPC) is provided. The protective film may be prevented from being formed by using a mask, or the external input terminal portion may be covered with a tape such as Teflon (registered trademark) used as a masking tape in the CVD device so that the protective film is not formed. Good.

The light emitting device having the above structure is used as the protective film 91.
By enclosing the light emitting element with 9, it is possible to completely shield the light emitting element from the outside, and it is possible to prevent intrusion of a substance such as moisture or oxygen, which promotes deterioration due to oxidation of the organic compound layer, from the outside. In addition, heat can be dissipated by the film having heat conductivity. Therefore, a highly reliable light emitting device can be obtained.

Further, the pixel electrode is an anode (a metal material having a large work function, such as W, Ni, Cr, Pt, etc.), the TFT connected to the pixel electrode is a p-channel TFT, and the cathode is a transparent metal. A thin film (a metal material having a small work function, such as Al or Ag) or a stacked layer of the thin metal film and a transparent conductive film may be configured to emit light in the same direction as in FIG.

Further, the pixel electrode may be used as an anode, and the organic compound layer and the cathode may be laminated to emit light in the direction opposite to that shown in FIG. FIG. 16 shows an example thereof. Since the top view is the same, it is omitted.

The sectional structure shown in FIG. 16 will be described below. The insulating film 1010 is provided on the film substrate 1000, and the pixel portion 1002 and the gate side driver circuit 1003 are formed above the insulating film 1010.
02 is formed by a plurality of pixels including a current control TFT 1011 and a pixel electrode 1012 electrically connected to its drain. According to the embodiment, the film substrate 1000 is attached after the layer to be peeled formed on the substrate is peeled off. In addition, the gate side drive circuit 1003 is n
Channel type TFT 1013 and p channel type TFT 101
It is formed by using a CMOS circuit in which 4 and 4 are combined.

These TFTs (1011, 1013, 1
(Including 014) is the n-channel TFT of the first embodiment.
201, according to the p-channel TFT 202 of the first embodiment.

The pixel electrode 1012 functions as an anode of a light emitting element (organic light emitting element). Further, banks 1015 are formed at both ends of the pixel electrode 1012,
The organic compound layer 1016 and the cathode 10 of the light emitting device
17 is formed.

The cathode 1017 also functions as a wiring common to all pixels, and the FPC 1009 is connected via the connection wiring 1008.
Electrically connected to. Further, all the elements included in the pixel portion 1002 and the gate side driver circuit 1003 are covered with the cathode 1017, the organic resin 1018, and the protective film 1019. In addition, the cover material 1020 and the cover material 1020 are attached to each other with an adhesive. In addition, the cover material is provided with a recessed portion so that the desiccant 1
021 is installed.

When the cover material 1020 is formed into a concave shape as shown in FIG. 16, when the cover material 1020 serving as a support is adhered and then peeled off, the wiring lead-out terminal portion is only the insulating film 1010 and mechanical strength is increased. Since it becomes weak, the FPC 1009 is attached before peeling, and the organic resin 102
It is desirable to fix at 2.

Also, in FIG. 16, the pixel electrode is used as an anode,
Since the organic compound layer and the cathode are laminated, the emission direction is as shown in FIG.
It is in the direction of the arrow shown in.

Although the top gate type TFT has been described here as an example, the present invention can be applied regardless of the TFT structure. For example, a bottom gate type (reverse stagger type) TFT or a forward stagger type TFT can be applied. It is possible to apply.

[Embodiment 9] In Embodiment 8, an example using a top gate type TFT is shown.
It is also possible to use FT. Here, an example using a bottom gate type TFT is shown in FIG.

As shown in FIG. 17, the n-channel TF
The T1113, the p-channel TFT 1114, and the n-channel TFT 1111 all have a bottom gate structure. These bottom gate structures may be manufactured using a known technique. The active layers of these TFTs are semiconductor films (polysilicon or the like) having a crystal structure.

Further, in FIG. 17, reference numeral 1100 denotes a flexible film substrate (eg, plastic substrate).
101 is a film having a compressive stress (for example, a silicon oxide film), 1102 is a pixel portion, 1103 is a gate side driving circuit, 1110 is an insulating film, 1112 is a pixel electrode (cathode),
1115 is a bank, 1116 is an organic compound layer, 1117
Is an anode, 1118 is an organic resin, 1119 is a protective film, 11
Reference numeral 20 is a cover material, 1211 is a desiccant, and 1122 is an organic resin.

Further, the n-channel type TFT 1113, the p-channel type TFT 1114 and the n-channel type TFT 1111.
The configuration other than that is the same as that of the eighth embodiment, and thus the description thereof is omitted here.

[Embodiment 10] Various modules (active matrix type liquid crystal module, active matrix type E) are used for the driving circuits and pixel portions formed by implementing the present invention.
L module, active matrix type EC module). That is, the present invention can be applied to all electronic devices in which they are incorporated in the display section.

Examples of such electronic equipment include video cameras, digital cameras, head mounted displays (goggles type displays), car navigations, projectors, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones, electronic books, etc.). ) And the like. Examples of these are shown in FIGS. 18 and 19.

FIG. 18A shows a personal computer, which has a main body 2001, an image input section 2002, and a display section 20.
03, keyboard 2004 and the like. Display unit 2 of the present invention
003 can be applied.

FIG. 18B shows a video camera, which includes a main body 2101, a display portion 2102, a voice input portion 2103, operation switches 2104, a battery 2105, and an image receiving portion 210.
Including 6 etc. The present invention can be applied to the display portion 2102.

FIG. 18C shows a mobile computer (mobile computer), which includes a main body 2201, a camera portion 2202, an image receiving portion 2203, operation switches 2204, a display portion 2205, and the like. The present invention can be applied to the display portion 2205.

FIG. 18D shows a goggle type display, which includes a main body 2301, a display portion 2302 and an arm portion 230.
Including 3 etc. The present invention can be applied to the display portion 2302.

FIG. 18E shows a player that uses a recording medium (hereinafter referred to as a recording medium) in which a program is recorded, and has a main body 2401, a display section 2402, and a speaker section 240.
3, a recording medium 2404, operation switches 2405 and the like. This player uses a DVD (D
optical Versatile Disc), CD
It is possible to play music, watch movies, play games, and use the internet. The present invention can be applied to the display portion 2402.

FIG. 18F shows a digital camera, which includes a main body 2501, a display portion 2502, an eyepiece portion 2503, operation switches 2504, an image receiving portion (not shown) and the like. The present invention can be applied to the display portion 2502.

FIG. 19A shows a mobile phone, which is a main body 29.
01, voice output unit 2902, voice input unit 2903, display unit 2904, operation switch 2905, antenna 290
6. Image input unit (CCD, image sensor, etc.) 2907
Including etc. The present invention can be applied to the display portion 2904.

FIG. 19B shows a portable book (electronic book) including a main body 3001, display portions 3002 and 3003, a storage medium 3004, operation switches 3005, an antenna 3006.
Including etc. The present invention can be applied to the display portions 3002 and 3003.

FIG. 19C shows a display, which includes a main body 3101, a support base 3102, a display portion 3103 and the like.
The present invention can be applied to the display portion 3103.

By the way, the display shown in FIG. 19C has a small or medium size or a large size, for example, a screen size of 5 to 20 inches. Further, in order to form a display portion having such a size, it is preferable to use a substrate whose one side is 1 m and perform multi-chambering for mass production.

As described above, the applicable range of the present invention is extremely wide, and the present invention can be applied to electronic device manufacturing methods in all fields. In addition, the electronic device of the present embodiment is
It can be realized by using any combination of nine.

[Embodiment 11] In this embodiment, Embodiment 10 will be described.
An example in which an electrophoretic display device is used as the display unit described in 1. It is typically applied to the display portions 3002 and 3003 of the portable book (electronic book) shown in FIG.

The electrophoretic display device (electrophoretic display) is also called electronic paper, and has the advantages of the same readability as paper, lower power consumption than other display devices, and a thin and light shape. have.

The electrophoretic display may have various forms, but a plurality of microcapsules containing first particles having a positive charge and second particles having a negative charge are dispersed in a solvent or a solute. By applying an electric field to the microcapsules, the particles in the microcapsules are moved in opposite directions and only the color of the particles that have gathered on one side is displayed. The first particles or the second particles contain a dye and do not move in the absence of an electric field. In addition, the color of the first particles and the color of the second particles are different (including colorless)
And

Thus, the electrophoretic display is a display utilizing the so-called dielectrophoretic effect in which a substance having a high dielectric constant moves to a high electric field region. The electrophoretic display does not require a polarizing plate and a counter substrate, which are necessary for a liquid crystal display device, for the electrophoretic display device, and the thickness and weight are halved.

A dispersion of the above-mentioned microcapsules in a solvent is called electronic ink, and this electronic ink can be printed on the surface of glass, plastic, cloth, paper and the like.

If a plurality of the above-mentioned microcapsules are appropriately arranged on the active matrix substrate so as to be sandwiched between the two electrodes, an active matrix type display device is completed. It can be carried out.

The first particles and the second particles in the microcapsules are conductor materials, insulator materials, semiconductor materials, magnetic materials, liquid crystal materials, ferroelectric materials, electroluminescent materials, electrochromic materials. , A kind of material selected from magnetophoretic materials, or a composite material thereof may be used.

[0270]

According to the present invention, since it is peeled from the substrate by physical means, the reliability of the device can be improved without damaging the semiconductor layer.

Further, according to the present invention, not only the peeled layer having a small area but also the peeled layer having a large area can be peeled over the entire surface with a good yield.

In addition, the present invention can be said to be a process suitable for mass production because it can be easily peeled off by physical means, for example, peeled off by a human hand. Further, when a manufacturing apparatus for peeling off the layer to be peeled off is manufactured at the time of mass production, a large manufacturing apparatus can be manufactured at low cost.

[Brief description of drawings]

FIG. 1 is a diagram illustrating a first embodiment.

FIG. 2 is a diagram illustrating a second embodiment.

FIG. 3 is a diagram illustrating an experiment.

FIG. 4 is a diagram illustrating a third embodiment.

FIG. 5 is a diagram illustrating a fourth embodiment.

FIG. 6 is a diagram showing a manufacturing process of an active matrix substrate.

FIG. 7 is a diagram showing a manufacturing process of an active matrix substrate.

FIG. 8 is a diagram showing an active matrix substrate.

FIG. 9 is a diagram illustrating a second embodiment.

FIG. 10 is a diagram illustrating a third embodiment.

FIG. 11 is a diagram illustrating a fourth embodiment.

FIG. 12 is a diagram illustrating a fifth embodiment.

FIG. 13 is a diagram illustrating a sixth embodiment.

FIG. 14 is a diagram illustrating a seventh embodiment.

FIG. 15 is a diagram illustrating an eighth embodiment.

FIG. 16 is a diagram illustrating an eighth embodiment.

FIG. 17 is a diagram illustrating a ninth embodiment.

FIG. 18 illustrates examples of electronic devices.

FIG. 19 illustrates an example of an electronic device.

─────────────────────────────────────────────────── ─── Continued Front Page (51) Int.Cl. ⁷ Identification Code FI Theme Coat (Reference) G09F 9/30 360 G09F 9/30 360 9/35 9/35 H01L 21/20 H01L 21/20 21/268 21/268 E 21/336 H05B 33/10 29/786 33/14 A H05B 33/10 H01L 29/78 627D 33/14 626C

Claims (22)

[Claims] 1. A peeling method for peeling a layer to be peeled from a substrate, wherein a first material layer having a tensile stress is provided on the substrate, and the first material layer is provided on the substrate. A layer to be peeled, which is in contact with at least the first material layer and includes a second material layer having a compressive stress, and the layer to be peeled is provided on the substrate provided with the first material layer. The peeling method, wherein the peeling is performed in the layer or the interface of the second material layer by a physical means. 2. The method according to claim 1, wherein the first material layer is
A peeling method, which has a tensile stress in the range of 1 to 1 × 10 ¹⁰ (Dyne / cm ² ). 3. The peeling method according to claim 1 or 2, wherein the second material layer has a compressive stress in the range of −1 to −1 × 10 ¹⁰ (Dyne / cm ² ). . 4. A peeling method for peeling a layer to be peeled from a substrate, wherein a first material layer is provided on the substrate, and at least the first material layer is provided on the substrate provided with the first material layer. After forming a layer to be peeled which is in contact with the first material layer and includes a second material layer having a compressive stress, the layer to be peeled is formed by a physical means from a substrate provided with the first material layer. The peeling method is characterized in that the peeling is performed in the layer of the second material layer or at the interface. 5. The method according to claim 4, wherein the first material layer is
Immediately before peeling, 1 to 1 × 10 ^Ten(Dyne / cm²)of
A peeling method having a tensile stress in a range. 6. The peeling method according to claim 4 or 5, wherein a heat treatment or a laser light irradiation treatment is performed before the peeling. 7. The method according to claim 4, wherein the first material layer has a compressive stress immediately after being formed,
Moreover, a peeling method having a tensile stress immediately before peeling. 8. The method according to claim 4, wherein the second material layer has a thickness of -1 to -1 immediately before peeling.
A peeling method having a compressive stress in the range of × 10 ¹⁰ (Dyne / cm ² ). 9. A peeling method for peeling a layer to be peeled from a substrate, wherein a first material layer having a tensile stress is provided on the substrate, and the substrate is provided with the first material layer. A layer to be peeled which is in contact with at least the first material layer and includes a second material layer having a compressive stress, and a support is bonded to the layer to be peeled and then bonded to the support. A peeling method comprising peeling the peeled layer to be peeled from a substrate provided with the first material layer at a layer inside or at an interface of the second material layer by a physical means. 10. A peeling method for peeling a layer to be peeled from a substrate, wherein a first material layer is provided on the substrate,
On a substrate provided with the first material layer, a layer to be peeled, which is in contact with at least the first material layer and includes a second material layer having a compressive stress, is formed, and the layer to be peeled is formed. After the support is adhered, the layer to be separated adhered to the support may be separated from the substrate provided with the first material layer by physical means in the layer of the second material layer or at the interface. Characteristic peeling method. 11. The peeling method according to claim 10, wherein the first material layer has a compressive stress immediately after formation and a tensile stress immediately before peeling. 12. The peeling method according to claim 9, wherein a heat treatment or a laser light irradiation treatment is performed before the support is bonded. 13. A step of forming a first material layer having a tensile stress on a substrate, a step of forming a second material layer having a compressive stress on the first material layer, and the second step. Forming an insulating layer on the material layer; forming an element on the insulating layer; adhering a support to the element; And a step of adhering the transfer body to the insulating layer or the second material layer and sandwiching the element between the support and the transfer body. And a method for manufacturing a semiconductor device. 14. A step of forming a first material layer on a substrate, a step of forming a second material layer having a compressive stress on the first material layer, and a step of forming on the second material layer. A step of forming an insulating layer, a step of forming an element on the insulating layer,
A step of adhering a support to the element and then peeling the support from the substrate at a layer or interface of the second material layer by a physical means; and a transfer body to the insulating layer or the second material layer. And a step of sandwiching the element between the support and the transfer body, the method for manufacturing a semiconductor device. 15. The peeling method according to claim 14, wherein the first material layer has a compressive stress immediately after formation and a tensile stress immediately before peeling. 16. The method for manufacturing a semiconductor device according to claim 13, wherein the support is a film substrate or a base material. 17. The method of manufacturing a semiconductor device according to claim 13, wherein the transfer body is a film substrate or a base material. 18. A method for manufacturing a semiconductor device according to claim 13, wherein a heat treatment or a laser light irradiation treatment is performed before the support is bonded. 19. The method for manufacturing a semiconductor device according to claim 13, wherein heat treatment or laser light irradiation treatment is performed before peeling by the physical means. 20. The device according to claim 13, wherein the element is a thin film transistor having a semiconductor layer as an active layer, and the step of forming the semiconductor layer includes heating a semiconductor layer having an amorphous structure. A method for manufacturing a semiconductor device, which comprises crystallizing a semiconductor layer having a crystal structure by a treatment or a treatment of irradiating a laser beam. 21. The support according to claim 13, wherein the support is a counter substrate, the element has a pixel electrode, and the pixel electrode and the counter substrate are provided between the pixel electrode and the counter substrate. A method for manufacturing a semiconductor device, which is filled with a liquid crystal material. 22. The method for manufacturing a semiconductor device according to claim 13, wherein the support is a sealing material, and the element is a light emitting element.