[go: up one dir, main page]

JP2003101154A5 - - Google Patents

Download PDF

Info

Publication number
JP2003101154A5
JP2003101154A5 JP2002260153A JP2002260153A JP2003101154A5 JP 2003101154 A5 JP2003101154 A5 JP 2003101154A5 JP 2002260153 A JP2002260153 A JP 2002260153A JP 2002260153 A JP2002260153 A JP 2002260153A JP 2003101154 A5 JP2003101154 A5 JP 2003101154A5
Authority
JP
Japan
Prior art keywords
nitride semiconductor
layer
semiconductor layer
semiconductor device
superlattice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002260153A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003101154A (ja
JP4438274B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002260153A priority Critical patent/JP4438274B2/ja
Priority claimed from JP2002260153A external-priority patent/JP4438274B2/ja
Publication of JP2003101154A publication Critical patent/JP2003101154A/ja
Publication of JP2003101154A5 publication Critical patent/JP2003101154A5/ja
Application granted granted Critical
Publication of JP4438274B2 publication Critical patent/JP4438274B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2002260153A 1997-05-26 2002-09-05 窒化物半導体素子 Expired - Fee Related JP4438274B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002260153A JP4438274B2 (ja) 1997-05-26 2002-09-05 窒化物半導体素子

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP13421097 1997-05-26
JP9-134210 1997-05-26
JP24434297 1997-09-09
JP9-244342 1997-09-09
JP9-274438 1997-10-07
JP27443897 1997-10-07
JP2002260153A JP4438274B2 (ja) 1997-05-26 2002-09-05 窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP31127297A Division JP3478090B2 (ja) 1997-01-09 1997-10-27 窒化物半導体素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008283153A Division JP4947035B2 (ja) 1997-05-26 2008-11-04 窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2003101154A JP2003101154A (ja) 2003-04-04
JP2003101154A5 true JP2003101154A5 (de) 2005-07-07
JP4438274B2 JP4438274B2 (ja) 2010-03-24

Family

ID=40398642

Family Applications (3)

Application Number Title Priority Date Filing Date
JP31127297A Expired - Fee Related JP3478090B2 (ja) 1997-01-09 1997-10-27 窒化物半導体素子
JP2002260153A Expired - Fee Related JP4438274B2 (ja) 1997-05-26 2002-09-05 窒化物半導体素子
JP2008283153A Expired - Lifetime JP4947035B2 (ja) 1997-05-26 2008-11-04 窒化物半導体素子

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP31127297A Expired - Fee Related JP3478090B2 (ja) 1997-01-09 1997-10-27 窒化物半導体素子

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2008283153A Expired - Lifetime JP4947035B2 (ja) 1997-05-26 2008-11-04 窒化物半導体素子

Country Status (1)

Country Link
JP (3) JP3478090B2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2298491C (en) 1997-07-25 2009-10-06 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6838705B1 (en) * 1999-03-29 2005-01-04 Nichia Corporation Nitride semiconductor device
JP4554803B2 (ja) * 2000-12-04 2010-09-29 独立行政法人理化学研究所 低転位バッファーおよびその製造方法ならびに低転位バッファーを備えた素子
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
JP2003332688A (ja) 2002-03-08 2003-11-21 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体レーザ
JP2004055855A (ja) 2002-07-19 2004-02-19 Toyoda Gosei Co Ltd 通信装置
US7345297B2 (en) 2004-02-09 2008-03-18 Nichia Corporation Nitride semiconductor device
JP2006344689A (ja) 2005-06-07 2006-12-21 Rohm Co Ltd 半導体素子
US7462884B2 (en) 2005-10-31 2008-12-09 Nichia Corporation Nitride semiconductor device
JP2007142198A (ja) 2005-11-18 2007-06-07 Rohm Co Ltd 半導体レーザ及び半導体レーザ製造方法
JP2008311579A (ja) 2007-06-18 2008-12-25 Sharp Corp 窒化物半導体発光素子の製造方法
KR101007086B1 (ko) 2008-09-02 2011-01-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP2011091289A (ja) * 2009-10-26 2011-05-06 Sony Corp 半導体素子の製造方法および半導体素子
US8575592B2 (en) 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
US8860077B2 (en) 2010-02-12 2014-10-14 Lg Innotek Co., Ltd. Light emitting device and light emitting device package including the same
JP2013098232A (ja) * 2011-10-28 2013-05-20 Sharp Corp 窒化物半導体レーザ素子
JP2014192475A (ja) * 2013-03-28 2014-10-06 Japan Oclaro Inc 窒化物光半導体素子及び光半導体装置
JP6702523B1 (ja) * 2019-10-15 2020-06-03 三菱電機株式会社 半導体装置
JP7333504B2 (ja) * 2020-11-16 2023-08-25 日亜化学工業株式会社 発光素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2298735A (en) * 1995-03-08 1996-09-11 Sharp Kk Semiconductor device having a miniband

Similar Documents

Publication Publication Date Title
JP2003101154A5 (de)
JP3622562B2 (ja) 窒化物半導体発光ダイオード
JP5125513B2 (ja) 窒化物半導体素子
USRE46444E1 (en) Nitride semiconductor device
KR101488846B1 (ko) 다중 양자 우물 구조를 포함한 광전 반도체칩
US20110037049A1 (en) Nitride semiconductor light-emitting device
JP4954536B2 (ja) 窒化物半導体発光素子
AU2002257318A1 (en) Group iii nitride based light emitting diode structures with a quantum well and superlattice
US8993996B2 (en) Superlattice structure
JP2009027201A5 (de)
US20080191195A1 (en) Nitride semiconductor device
JP2004521495A (ja) アンドープクラッド層を有するｉｉｉ族窒化物ｌｅｄ
US20150207029A1 (en) Superlattice Structure
JP2012109436A (ja) 発光ダイオード
JP2004087908A5 (de)
US20130187125A1 (en) Gallium-nitride-based light emitting diodes with multiple potential barriers
KR100604406B1 (ko) 질화물 반도체 소자
JP2003101154A (ja) 窒化物半導体素子
JP2008251641A (ja) Ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体素子の製造方法
CN106025018B (zh) 超晶格结构
JP2001298215A (ja) 発光素子
JP2003243772A5 (de)
JP2011192821A (ja) 発光ダイオード
JP2005051170A (ja) Ｉｉｉ族窒化物系化合物半導体発光素子
KR100357118B1 (ko) 질화물 발광소자