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Publication number
JP2003045952A5
JP2003045952A5 JP2002142168A JP2002142168A JP2003045952A5 JP 2003045952 A5 JP2003045952 A5 JP 2003045952A5 JP 2002142168 A JP2002142168 A JP 2002142168A JP 2002142168 A JP2002142168 A JP 2002142168A JP 2003045952 A5 JP2003045952 A5 JP 2003045952A5
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JP
Japan
Prior art keywords
mounting
layer
ceramic sprayed
mounting apparatus
sprayed layer
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Pending
Application number
JP2002142168A
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Japanese (ja)
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JP2003045952A (en
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Priority to JP2002142168A priority Critical patent/JP2003045952A/en
Priority claimed from JP2002142168A external-priority patent/JP2003045952A/en
Publication of JP2003045952A publication Critical patent/JP2003045952A/en
Publication of JP2003045952A5 publication Critical patent/JP2003045952A5/ja
Pending legal-status Critical Current

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Claims (14)

被処理体を載置する載置体と、この載置体上に形成され且つ内部に電極層を有するセラミック溶射層からなる静電チャック層を備え、プラズマ処理時に上記静電チャック層で被処理体を吸着する載置装置であって、上記セラミック溶射層は、上記電極層の上側がメタクリル樹脂によって封孔処理されてなることを特徴とする載置装置。A mounting body for mounting a target object, and an electrostatic chuck layer formed on the mounting body and made of a ceramic sprayed layer having an electrode layer inside, are processed by the electrostatic chuck layer during plasma processing. A mounting apparatus for adsorbing a body, wherein the ceramic sprayed layer is formed by sealing the upper side of the electrode layer with methacrylic resin. 上記セラミック溶射層は、上記電極層の下側がメタクリル樹脂によって封孔処理されてなることを特徴とする請求項1に記載の載置装置。The mounting apparatus according to claim 1, wherein the ceramic sprayed layer is formed by sealing a lower side of the electrode layer with methacrylic resin. 上記載置体の外周面は、上記静電チャック層のセラミック溶射層と一体的に形成されたセラミック溶射層によって被覆されていることを特徴とする請求項1または請求項2に記載の載置装置。The mounting surface according to claim 1 or 2, wherein an outer peripheral surface of the mounting body is covered with a ceramic sprayed layer formed integrally with the ceramic sprayed layer of the electrostatic chuck layer. apparatus. 上記載置体の外周面を被覆するセラミック溶射層は、メタクリル樹脂によって封孔処理されてなることを特徴とする請求項3に記載の載置装置。The mounting apparatus according to claim 3, wherein the ceramic sprayed layer covering the outer peripheral surface of the mounting body is sealed with methacrylic resin. 上記メタクリル樹脂はメタクリル酸メチルを主成分とする樹脂原料液が硬化してなることを特徴とする請求項1〜請求項4のいずれか1項に記載の載置装置。The mounting apparatus according to any one of claims 1 to 4, wherein the methacrylic resin is obtained by curing a resin raw material liquid containing methyl methacrylate as a main component. 上記セラミック溶射層が酸化アルミニウム、窒化アルミニウム、窒化硅素及び酸化チタンの少なくともいずれか一つからなることを特徴とする請求項1〜請求項5のいずれか1項に記載の載置装置。The mounting apparatus according to any one of claims 1 to 5, wherein the ceramic sprayed layer is made of at least one of aluminum oxide, aluminum nitride, silicon nitride, and titanium oxide. 上記セラミック溶射層の表面の平面度は、Ra=0.2〜0.3であることを特徴とする請求項1〜請求項6のいずれか1項に記載の載置装置。The flatness of the surface of the said ceramic sprayed layer is Ra = 0.2-0.3, The mounting apparatus of any one of Claims 1-6 characterized by the above-mentioned. 上記電極層の上側のセラミック溶射層の厚さは、250μm以下であることを特徴とする請求項1〜請求項7のいずれか1項に記載の載置装置。The mounting apparatus according to claim 1, wherein a thickness of the ceramic sprayed layer on the upper side of the electrode layer is 250 μm or less. 請求項1〜請求項8のいずれか1項に記載の載置装置を備えたことを特徴とするプラズマ処理装置。A plasma processing apparatus comprising the mounting apparatus according to claim 1 . 被処理体を載置する載置体と、この載置体上に形成され且つ内部に電極層を有するセラミック溶射層からなる静電チャック層を備え、プラズマ処理時に上記静電チャック層で被処理体を吸着する載置装置を製造する方法であって、上記載置体を加熱した状態でセラミック材料を溶射して上記載置体の載置面に上記静電チャック層を形成する工程を備えたことを特徴とする載置装置の製造方法。A mounting body for mounting a target object, and an electrostatic chuck layer formed on the mounting body and made of a ceramic sprayed layer having an electrode layer inside, are processed by the electrostatic chuck layer during plasma processing. a method of manufacturing a mounting device for adsorbing body, the more Engineering for forming the electrostatic chucking layer on the mounting surface of the upper described mounting body by spraying the ceramic material while heating the above described mounting body A method for manufacturing a mounting apparatus, comprising: 上記静電チャック層にメタクリル樹脂原料液を含浸させる工程と、上記メタクリル樹脂原料液を硬化させる工程とを備えたことを特徴とする請求項10に記載の載置装置の製造方法。The method for manufacturing a mounting apparatus according to claim 10, comprising a step of impregnating the electrostatic chuck layer with a methacrylic resin raw material liquid and a step of curing the methacrylic resin raw material liquid. 上記載置体に設けられたガス通路に圧縮空気を供給した状態でセラミック溶射層を形成することを特徴とする請求項10または請求項11に記載の載置装置の製造方法。The method for manufacturing a mounting apparatus according to claim 10 or 11 , wherein the ceramic sprayed layer is formed in a state where compressed air is supplied to a gas passage provided in the mounting body. 上記メタクリル樹脂原料液を硬化させる工程では脱気処理を行うことを特徴とする請求項10〜請求項12に記載の載置装置の製造方法。The method for manufacturing a mounting apparatus according to claim 10, wherein a deaeration process is performed in the step of curing the methacrylic resin raw material liquid. 上記脱気処理は、0.1Torr以下で行われることを特徴とする請求項13に記載の載置装置の製造方法。The method for manufacturing a mounting apparatus according to claim 13, wherein the deaeration process is performed at 0.1 Torr or less.
JP2002142168A 2001-05-25 2002-05-16 Holding apparatus, method of manufacturing same, and plasma processing apparatus Pending JP2003045952A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002142168A JP2003045952A (en) 2001-05-25 2002-05-16 Holding apparatus, method of manufacturing same, and plasma processing apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001156489 2001-05-25
JP2001-156489 2001-05-25
JP2002142168A JP2003045952A (en) 2001-05-25 2002-05-16 Holding apparatus, method of manufacturing same, and plasma processing apparatus

Publications (2)

Publication Number Publication Date
JP2003045952A JP2003045952A (en) 2003-02-14
JP2003045952A5 true JP2003045952A5 (en) 2005-09-15

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JP2002142168A Pending JP2003045952A (en) 2001-05-25 2002-05-16 Holding apparatus, method of manufacturing same, and plasma processing apparatus

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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004082007A1 (en) 2003-03-12 2004-09-23 Tokyo Electron Limited Substrate holding structure for semiconductor processing, and plasma processing device
CN1310285C (en) * 2003-05-12 2007-04-11 东京毅力科创株式会社 Processing device
JP4369765B2 (en) * 2003-07-24 2009-11-25 京セラ株式会社 Electrostatic chuck
JP4421874B2 (en) * 2003-10-31 2010-02-24 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
KR100697557B1 (en) * 2005-02-24 2007-03-21 주식회사 에이디피엔지니어링 Plasma treatment device and temperature control plate manufacturing method
JP2007005740A (en) * 2005-06-23 2007-01-11 Creative Technology:Kk Structure for electrostatic chuck potential supply part and its manufacturing and reproduction method
JP4942471B2 (en) * 2005-12-22 2012-05-30 京セラ株式会社 Susceptor and wafer processing method using the same
CN102124820B (en) * 2008-08-19 2014-09-10 朗姆研究公司 Edge rings for electrostatic chucks
JP6497248B2 (en) * 2015-07-13 2019-04-10 住友電気工業株式会社 Wafer holder
US11911863B2 (en) 2019-09-11 2024-02-27 Creative Technology Corporation Attachment and detachment device
KR102387231B1 (en) * 2020-07-17 2022-04-15 와이엠씨 주식회사 Sealing method of dielectric of electrostatic chuck
CN114981949A (en) * 2020-12-24 2022-08-30 东华隆股份有限公司 Electrostatic chuck and processing device
JP7619862B2 (en) 2021-03-30 2025-01-22 東京エレクトロン株式会社 Method for polishing substrate placement table and substrate processing apparatus
CN115295459A (en) * 2022-08-26 2022-11-04 苏州众芯联电子材料有限公司 Electrostatic chuck heating member manufacturing process, electrostatic chuck manufacturing process, and electrostatic chuck

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