JP2003045952A - Holding apparatus, method of manufacturing same, and plasma processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To overcome the problem that when an electrostatic chunk made of sprayed ceramic which is subjected to sealing processing by a silicon resin is used to apply high frequency power to a wafer in a high vacuum area (for example 100m Torr) for plasma processing, as the applied time of high frequency power, extends surface temperature of the wafer under plasma processing gradually drops lower than the initial surface temperature with time. SOLUTION: A holding apparatus 10 according to the present invention comprises a holding body 11 for holding the wafer W, and an electrostatic chuck 12 which is formed on the holding body and comprised of a ceramic- sprayed layer 12A having an electrode layer 12b therein, and absorbs the wafer W with the aforementioned electrostatic chuck layer when processing by plasma, wherein the ceramic-sprayed layer 12 is subjected to sealing processing by methacrylate resin 12D.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mounting apparatus used in, for example, a plasma processing apparatus and a manufacturing method thereof,
More specifically, the present invention relates to a mounting apparatus in which an electrostatic chuck for adsorbing and fixing an object to be processed is integrated, a manufacturing method thereof, and a plasma processing apparatus.

[0002]

2. Description of the Related Art A mounting apparatus used in a conventional plasma processing apparatus is, for example, as shown in FIG.
And an electrostatic chuck 2 arranged on the mounting body 1, and a focus ring 3 arranged on the outer peripheral edge portion of the mounting body 1 so as to surround the electrostatic chuck 2 and the electrostatic chuck 2. An object to be processed (for example, a wafer) W is adsorbed and fixed via the.

A high frequency power source 4 is connected to the mounting body 1 via a matching unit 4A, and a predetermined high frequency power is applied from the high frequency power source 4 under a predetermined vacuum degree to an upper electrode (not shown). ) And plasma of the process gas are generated, and the plasma is focused on the wafer W via the focus ring 3. A cooling medium passage 1A is formed inside the mounting body 1. The cooling medium circulates through the cooling medium passage 1A to cool the mounting body 1 and thus to cool the wafer W whose temperature is raised by the plasma processing to maintain a constant processing temperature. Hold. Further, a gas passage 1B of a heat conductive gas (for example, He gas) is formed inside the mounting body 1, and the gas passages 1B are opened at a plurality of positions on the upper surface of the mounting body 1. A through hole 2A corresponding to the gas passage 1B is formed in the electrostatic chuck 2, and He gas supplied from the gas passage 1B is supplied from the through hole 2A of the electrostatic chuck 2 to the gap between the mounting body 1 and the wafer W. Then, thermal conductivity is given to the narrow gap between the electrostatic chuck 2 and the wafer W, and the wafer W is efficiently cooled by the mounting body 1. The electrostatic chuck 2 is formed into a plate shape by sintering a ceramic such as alumina, and an electrode plate 2B connected to the DC power source 5 is interposed inside the electrostatic chuck 2. The electrostatic chuck 2 electrostatically attracts the wafer W with static electricity generated by a high voltage applied from the DC power supply 5.

By the way, since the electrostatic chuck 2 is manufactured in the shape of a thin plate by sintering ceramics as described above, it becomes difficult to manufacture the electrostatic chuck 2 in accordance with the increase in the diameter of the wafer W. ing. Therefore, recently, an electrostatic chuck has been manufactured by using a ceramic spraying technique to cope with an increase in the diameter of the electrostatic chuck (for example, Japanese Patent No. 2971).
369). Since an electrostatic chuck by ceramic spraying has water absorbency by forming pores between ceramic particles, for example, a sealing treatment is performed using a silicone resin raw material liquid and the pores are sealed with a silicone resin. When performing the sealing treatment, for example, after impregnating the alumina sprayed layer of the electrostatic chuck with a silicone resin raw material liquid in which methylsilyltriisocyanate is dissolved in ethyl acetate, the temperature is changed to 70 ° C. in the atmosphere,
When heated for 8 hours, methylsilyltriisocyanate polymerizes and hardens to become a silicone resin. This impregnation and curing are repeated a plurality of times to complete the sealing treatment.

[0005]

However, a high vacuum region (for example, 100 mT) is used by using an electrostatic chuck made of ceramic sprayed and sealed with a silicone resin.
When high frequency power is applied to the wafer W for plasma processing, as shown in FIG. 7, as the application time of the high frequency power becomes longer, the wafer surface temperature during the plasma processing becomes the initial surface temperature. From the above, a phenomenon was observed that gradually decreased with time.

The present invention has been made in order to solve the above problems, and there is no fear that the temperature of the object to be processed will decrease over time, and the object to be processed can be always processed at a stable temperature. An object of the present invention is to provide an apparatus, a manufacturing method thereof, and a plasma processing apparatus.

[0007]

Means for Solving the Problems As a result of various studies on the cause of the decrease in the temperature of the object to be treated during the treatment, the present inventor has impregnated the alumina resin sprayed layer with the silicone resin raw material liquid, and then polymerizes and cures Therefore, the surface of the alumina particles is coated with the silicone resin to form a silicone resin layer. However, after ethyl acetate, which is the diluting organic solvent, evaporates from the alumina sprayed layer, as shown conceptually in (b) of FIG. Pores 2C remain as evaporation marks between the alumina particles. Further, as shown in FIG. 9A, a film 2D made of silicone resin is also formed on the attracting surface of the electrostatic chuck 2. However, a part of the silicone resin film 2D on the attracting surface due to transportation of the wafer W or the like. 2E may be attached to the wafer W and peeled off as shown in FIG.
As a result, pores between the ceramic particles become visible on the adsorption surface. These pores peel off the silicone resin on the mounting surface and form recesses on the mounting surface, which increases the gap between the wafer and the adsorption surface (the area where the thermally conductive gas accumulates), improving the thermal conductivity and It was found that the surface temperature of the object to be treated is lowered. In particular, this phenomenon is remarkable on the side where the supply pressure of the heat conductive gas is low. In the figure, the silicone resin is schematically shown by black dots, and the state in which ceramic particles are coated with the silicone resin is schematically shown.

The present invention has been made on the basis of the above findings, and a mounting apparatus according to a first aspect is a mounting body on which a target object is mounted, and a mounting body formed on and inside the mounting body. A mounting apparatus, comprising an electrostatic chuck layer made of a ceramic sprayed layer having an electrode layer, for adsorbing an object to be processed by the electrostatic chuck layer during plasma processing, wherein the ceramic sprayed layer is sealed with a methacrylic resin. It is characterized by

Further, in the mounting apparatus according to the second aspect of the present invention, in the invention according to the first aspect, the methacrylic resin is obtained by curing a resin raw material liquid containing methyl methacrylate as a main component. It is a feature.

Further, in the mounting apparatus according to claim 3 of the present invention, in the invention according to claim 1 or 2, the ceramic sprayed layer is at least aluminum oxide, aluminum nitride, silicon nitride and titanium oxide. It is characterized by consisting of either one.

A plasma processing apparatus according to a fourth aspect of the present invention is characterized by including the mounting apparatus according to any one of the first to third aspects.

According to a fifth aspect of the present invention, there is provided a method of manufacturing a mounting apparatus, wherein a mounting body on which a target object is mounted and a ceramic having an electrode layer formed inside the mounting body are provided. A method of manufacturing a mounting apparatus, comprising an electrostatic chuck layer made of a sprayed layer, for adsorbing an object to be processed by the electrostatic chuck layer during plasma processing, comprising: spraying a ceramic material to mount the object. A step of forming the electrostatic chuck layer on the surface,
The method is characterized by comprising a step of impregnating the methacrylic resin raw material liquid in the electrostatic chuck layer and a step of curing the methacrylic resin raw material liquid.

The method of manufacturing a mounting apparatus according to a sixth aspect of the present invention is characterized in that, in the invention according to the fifth aspect, the ceramic sprayed layer is formed while the mounting body is heated. To do.

According to a seventh aspect of the present invention, there is provided a method of manufacturing a mounting apparatus according to the fifth or sixth aspect, wherein compressed air is supplied to a gas passage provided in the mounting body. In this state, the ceramic sprayed layer is formed.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described below based on the embodiments shown in FIGS. Placement device 1 of the present embodiment
For example, as shown in FIG. 1A, 0 indicates a mounting body 11 whose outer peripheral edge portion is made of aluminum, for example, lower than its central portion, and alumina is mounted on the mounting surface of the mounting body 11. Electrostatic chuck layer 12 formed by thermal spraying
And a focus ring 13 arranged so as to surround the electrostatic chuck layer 12. In addition, the mounting body 11
The outer peripheral surface of is covered with an alumina sprayed layer 14 formed by alumina spraying. Electrostatic chuck layer 12
The alumina sprayed layer of 1 is integrated with the alumina sprayed layer 14. The alumina sprayed layer is then sealed with a curable resin as described later. The curable resin may be either a thermosetting type or a photocuring type. In this embodiment, the case where the electrostatic chuck layer 12 and the outer peripheral surface of the mounting body 11 are formed by spraying alumina will be described. However, in addition to alumina, at least one of ceramics such as aluminum nitride, silicon nitride, and titanium oxide is used. The ceramic sprayed layer may be formed by selecting one of them and spraying it, or by appropriately mixing two or more kinds of ceramics and spraying them.

The electrostatic chuck layer 12 has, for example, the above-mentioned alumina sprayed layer 12A and an electrode layer 12B formed of, for example, tungsten inside, and the total layer thickness is set to, for example, 600 μm. Electrode layer 12B
The layer itself is formed by tungsten spraying to have a layer thickness of, for example, 50 μm. The alumina sprayed layer 12A is sealed with a curable resin as described above. That is,
For example, liquid methyl methacrylate (methacrylic resin raw material liquid) is impregnated into the pores in the alumina sprayed layer 12A,
The methacrylic resin is filled in the pores in the alumina sprayed layer 12A by curing the methacrylic resin raw material liquid. Since this methacrylic resin does not contain volatile components,
As conceptually shown in FIG. 1 (b), the pores between the alumina particles can be completely filled with the methacrylic resin (hatched portion) 12D so that the pores remain after the organic solvent evaporates like silicone resin. There is nothing. Further, the surface of the electrostatic chuck layer 12 is polished to have a flatness of Ra 0.2 to 0.3.

A refrigerant passage 11A and a gas passage 11B are formed inside the mounting body 11 as in the conventional case, and a through hole 12C corresponding to the gas passage 11B is formed in the electrostatic chuck layer 12. . Therefore, a thermally conductive gas such as He gas is supplied from the through hole 12C between the wafer W and the electrostatic chuck layer 12, and the thermally conductive gas enhances the thermal conductivity between the two, so that the mounting body The wafer 11 can be efficiently cooled by the number 11. Also, the mounting body 1
1 has a high frequency power source 1 through a matching unit 15A as in the conventional case.
5 is connected, and a DC power supply 17 is connected to the electrode layer 12B of the electrostatic chuck layer 12 via a power feeding pin 16.

Next, a method of manufacturing the mounting table device 10 will be described with reference to FIGS. First, the mounting body 11 in which the refrigerant passage 11A and the gas passage 11B are formed is prepared. In a state where the mounting body 11 is heated to, for example, 150 ° C., the low outer peripheral edge portion of the upper surface of the mounting body 11 is masked, and then compressed air of 98 KPa is supplied to the gas flow passage 11B of the mounting body 11 with a gauge pressure, for example. Then, spray the compressed air through the opening to spray alumina, for example 450μ
m alumina sprayed layer 12A is formed as shown in FIG. Alumina sprayed layer 1 by supplying compressed air
A through hole 12C can be formed in 2A. afterwards,
The alumina sprayed layer 12A is polished until the layer thickness becomes 300 μm, for example.

Next, the electrode layer 12B is formed. To do this, after masking the part of the alumina sprayed layer 12A other than the part where the electrode layer 12B is formed, tungsten is sprayed while supplying compressed air to the gas passage 11B at room temperature. For example, an electrode layer 12B of 50 μm is shown in FIG. When formed in this manner, the through hole 12C is also formed in the electrode layer 12B at the same time. Then, the periphery of the through hole 12C is blasted by using No. 60 blasting so that the through hole 12C is not clogged.

Subsequently, while the mounting body 11 is heated to, for example, 150 ° C., alumina is sprayed while ejecting compressed air from the opening of the gas passage 11B to form an alumina sprayed layer 12A of 400 μm as shown in FIG. To do. By this operation, as shown in the same figure, the alumina sprayed layer 12A
The electrostatic chuck layer 12 in which the electrode layer 12B is interposed is formed integrally with the mounting body 11. A through hole 12C is automatically formed in the electrostatic chuck layer 12 at the same time when the alumina spraying is completed.

Further, the methacrylic resin raw material liquid is applied to the electrostatic chuck layer 12 using a roller. As a result, the methacrylic resin raw material liquid permeates and is impregnated into the pores of the alumina sprayed layer 12A of the electrostatic chuck layer 12. Then, the mounting body 11 is put into the vacuum container, and deaeration is performed under a vacuum of 0.1 Torr. Alumina sprayed layer 1 during vacuum degassing
In 2A, the methacrylic resin raw material liquid is polymerized through a polymerization catalyst to form a methacrylic resin, and the alumina sprayed layer 12
The pores in A are filled with methacrylic resin 12D as shown in FIG. 1 (b). Further, as a method for curing the methacrylic resin raw material liquid which is the impregnating agent, instead of the above-described degassing treatment method, the mounting table 11 is heated at a temperature of 60 to 70 ° C. for 5 hours.
A firing treatment method of heating and firing for up to 8 hours can also be used. In this embodiment, the methacrylic resin raw material liquid is applied only to the upper alumina sprayed layer 12A after the electrode layer 12B is formed, but the lower alumina sprayed layer before the electrode layer 12B is formed. By applying the methacrylic resin raw material liquid to 12A as well, the electrostatic chuck layer 12 is formed.
It is possible to prevent the formation of pores inside with a high probability.

Next, after masking the portions other than the outer peripheral edge of the electrostatic chuck layer 12 and removing the mask material on the outer peripheral edge of the upper surface of the mounting body 11, alumina is sprayed onto the outer peripheral surface of the mounting body 11 at room temperature. Then, the alumina sprayed layer 14 of 750 μm, for example, is formed as shown in FIG. By this operation, the alumina sprayed layer 12A and the alumina sprayed layer as shown in FIG.
14 are integrated. Then, the alumina sprayed layer 14A on the outer peripheral surface of the electrostatic chuck 12 is coated with and impregnated with the methacrylic resin raw material liquid, and the other alumina sprayed layer 14B is coated with and impregnated with, for example, a silicone resin raw material liquid. Another alumina sprayed layer 14B may be impregnated with the methacrylic resin raw material liquid.

After removing the mask material from the electrostatic chuck layer 12, the electrostatic chuck layer 12 is grinded.
Further, the alumina sprayed layer 14 is polished to finish the surface of the mounting body 11 as shown in FIG. 6 and the peripheral surface of the mounting body 11 as well. The flatness of the surface of the electrostatic chuck layer 12 is adjusted to Ra 0.2 to 0.3. Electrostatic chuck layer 1
The alumina sprayed layer 12A on the upper side of the second electrode layer 12B is
The thickness is preferably thin, and more preferably 250 μm or less.

Further, the electrode layer 12B of the electrostatic chuck layer 12
The power supply pin 16 that connects the DC power supply 17 with the
As shown in FIG. 1, the pin body 16A made of a conductive material such as aluminum, titanium, and stainless steel, and the pin body 1
6A, and an insulating layer 16B such as an alumina sprayed layer. The tip of the power supply pin 16 (electrode layer 12
The connection portion with B) is formed in a taper shape as shown in the figure, and relaxes the stress due to the thermal expansion of the alumina sprayed layer,
The cracking of the alumina sprayed layer due to this portion is prevented.
That is, the tip of the power supply pin 16 is formed in a tapered shape, and the thickness of the alumina sprayed layer and the insulating layer 16B is reduced to improve the elasticity of the alumina sprayed layer, and stress is exerted due to the difference in thermal expansion from the aluminum base material. It is possible to reliably prevent the cracking of the alumina sprayed layer.

For example, on the surface of an aluminum base material, 90
An alumina sprayed layer having a thickness of 0 μm, 600 μm, 300 μm, and 100 μm was formed, and the aluminum base material was heated to test at what temperature the cracking occurred in the sprayed layer. As a result, when the thickness of the alumina sprayed layer is 900 μm, 90
Cracking occurred at 115 ° C. when the temperature was 600 μm, and 135 ° C. when the temperature was 300 μm, but no cracking occurred up to 180 ° C. when the thickness of the alumina irradiation layer was 100 μm. By thinning the alumina sprayed layer formed on the surface of the aluminum base material in this way, the elasticity of the alumina sprayed layer is improved, and the alumina sprayed layer expands and contracts in accordance with the thermal expansion of the aluminum base material. It is highly probable that cracking was suppressed.

Next, a red check was conducted to confirm the filling condition of the pores of the alumina sprayed layer 12A with the methacrylic resin 12D. Further, the conventional silicone resin was also red-checked similarly and compared with the methacrylic resin. The red check is an inspection method in which a red dye is applied, and after the surface dye is wiped off, the presence or absence of pores is confirmed by the presence or absence of coloring by the red dye.

The electrostatic chuck layer 12 of the present embodiment is obtained by impregnating the methacrylic resin raw material liquid three times and performing a sealing treatment. When a red check was performed on the electrostatic chuck layer 12, no coloring was recognized on the surface. Furthermore, the surface is 75 μm, 100 μm, 150
Polishing was performed in 5 stages of μm, 200 μm, and 250 μm, and the presence or absence of coloration on the surface was examined by red check at each stage.
As a result, no coloring was observed on any surface.
Therefore, it is confirmed that the electrostatic chuck layer 12 of the present embodiment is surely sealed with the methacrylic resin 12D to a depth of at least 250 μm and the pores are filled with the methacrylic resin 12D, so that the sealing treatment is surely performed. did it.

For comparison, a silicone resin 5 was used.
The electrostatic chuck layer was subjected to the sealing treatment once, ten times, fifteen times, and twenty times, and a red check was performed for each. As a result, as the number of treatments increased, the coloring became lighter, but coloring was recognized in all the electrostatic chuck layers.
Furthermore, the electrostatic chuck layers after the sealing treatment were cut, and the degree of penetration of the red dye was examined from the cross section. As a result, the coloring of the cross section became lighter as the number of impregnation treatments increased, similar to the coloring of the surface. . Therefore, it was found that the pores remained in the electrostatic chuck layer when the sealing treatment was performed with the silicone resin.

Next, the wafer W is subjected to plasma processing under predetermined conditions using the mounting apparatus 10 of this embodiment, and the application time of the high frequency power and the surface temperature of the wafer W are obtained. As a result, as shown in FIG. It has been found that the surface temperature of the wafer W is constant and does not decrease even when the application time of the high frequency power is long. In other words, when methacrylic resin is used for the sealing treatment in the electrostatic chuck 12, pores as evaporation marks are not formed between alumina particles as in the conventional case, so that the plasma treatment in the high vacuum region is performed with time. It is possible to prevent a significant decrease in wafer temperature. Particularly, in the process of controlling the temperature of the wafer W by switching it from 100 ° C. to 120 ° C., for example, the supply pressure of the heat conductive gas is 10 to 40 T.
Even when the pressure is switched from orr to a low pressure of 5 to 10 Torr, the low-pressure thermally conductive gas does not permeate between the alumina particles of the alumina sprayed layer 12A, and the thermally conductive gas is not wasted on the wafer W. Since the back surface is sufficiently reached, the temperature of the wafer W can be controlled with high accuracy.

As described above, according to this embodiment,
After forming the electrostatic chuck layer 12 on the mounting surface of the mounting body 11, and then coating and impregnating the methacrylic resin raw material liquid on the alumina sprayed layer 12A of the electrostatic chuck layer 12, the methacrylic resin raw material liquid is cured. Since the pores in the alumina sprayed layer 12A of the electrostatic chuck layer 12 are sealed, the pores in the alumina sprayed layer 12A can be filled with the methacrylic resin 12D, and the processing of the wafer W in the high vacuum region is prolonged. The surface temperature of the wafer W does not decrease even after a long time, and stable plasma processing can be performed at a predetermined temperature. Further, in the past, there was a risk that the sprayed film on the adsorption surface of the electrostatic chuck would crack due to the difference in the thermal expansion coefficient between the aluminum base material and the ceramic sprayed film, so there are restrictions when using the mounting device in a high temperature region. However, in the present embodiment, since the mounting body 11 is heated to thermally spray the alumina in a state where the aluminum base material is thermally expanded, the thermal stress between the aluminum base material and the ceramic sprayed layer 12A is relaxed. You can
The heat resistant temperature of the mounting device 10 can be increased.

The present invention is not limited to the above embodiment. In short, the present invention includes a mounting device in which pores in the electrostatic chuck layer are sealed using a curable resin that does not contain an organic solvent as a diluting liquid, a manufacturing method thereof, and a plasma processing device. .

[0032]

According to the first to seventh aspects of the present invention, there is no fear that the temperature of the object to be processed will decrease with time, and the object to be processed is always treated at a stable temperature. It is possible to provide a mounting apparatus capable of performing the above, a manufacturing method thereof, and a plasma processing apparatus.

[Brief description of drawings]

FIG. 1 is a view showing an embodiment of a mounting device of the present invention,
(A) is the sectional view, (b) is sectional drawing which shows the electrostatic chuck layer of (a) notionally.

FIG. 2 is a cross-sectional view showing a manufacturing process of the mounting apparatus shown in FIG. 1, showing a state in which an alumina sprayed layer forming an electrostatic chuck layer is formed on a mounting surface of a mounting body.

FIG. 3 is a cross-sectional view showing a manufacturing process of the mounting device shown in FIG. 1, showing a state in which an electrode layer constituting an electrostatic chuck layer is formed.

FIG. 4 is a cross-sectional view showing a manufacturing process of the mounting device shown in FIG. 1, showing a state in which an electrostatic chuck layer is formed.

5 is a view showing a manufacturing process of the mounting apparatus shown in FIG. 1, and a sectional view showing a state in which an alumina sprayed layer is formed on the outer peripheral surface of the mounting body.

6 is a cross-sectional view showing a manufacturing process of the mounting device shown in FIG. 1, showing a state after the alumina sprayed layer is subjected to a polishing treatment.

FIG. 7 is an enlarged cross-sectional view showing a connection portion between the electrostatic chuck and the power feeding pin of the mounting device shown in FIG.

FIG. 8 is a graph showing a relationship between a high-frequency power application time and a wafer temperature when plasma processing is performed on a wafer using the mounting apparatus shown in FIG. 1 and a conventional mounting apparatus.

9 is a view corresponding to FIG. 1 showing an example of a conventional mounting device,
(A) is the sectional view, (b) is sectional drawing which shows notionally the alumina sprayed layer of the electrostatic chuck of (a).

10 is a sectional view conceptually showing a part of the alumina sprayed layer of the electrostatic chuck shown in FIG. 9, and FIG.
(B) is a sectional view showing a state where a part of the surface of the alumina sprayed layer of the electrostatic chuck of (a) is peeled off.

[Explanation of symbols]

10 Placement device 11 Placement 12 Electrostatic chuck 12A Alumina sprayed layer (ceramic sprayed layer) 12B electrode layer 12D methacrylic resin

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Nobuyuki Okayama             TBS release, 5-3-6 Akasaka, Minato-ku, Tokyo             Sending Center Tokyo Electron Limited F-term (reference) 4K030 GA02 KA47                 5F031 CA02 HA02 HA03 HA19 HA39                       NA01 NA05 PA18

Claims (7)

[Claims] 1. A mounting body on which a target object is mounted, and an electrostatic chuck layer formed of a ceramic sprayed layer formed on the mounting body and having an electrode layer inside, the electrostatic chuck layer being provided during the plasma processing. A placing device for adsorbing a target object by a chuck layer, wherein the ceramic sprayed layer is subjected to sealing treatment with methacrylic resin. 2. The mounting apparatus according to claim 1, wherein the methacrylic resin is formed by curing a resin raw material liquid containing methyl methacrylate as a main component. 3. The ceramic sprayed layer is made of at least one of aluminum oxide, aluminum nitride, silicon nitride and titanium oxide.
Alternatively, the mounting device according to claim 2. 4. A plasma processing apparatus comprising the mounting apparatus according to claim 1. 5. An electrostatic chuck layer formed of a ceramic sprayed layer, which is formed on the mounting body and has an electrode layer inside, is provided on the mounting body on which the object to be processed is mounted. A method of manufacturing a mounting device for adsorbing a target object with a chuck layer, the method comprising spraying a ceramic material to form the electrostatic chuck layer on a mounting surface of the mounting body,
A method for manufacturing a mounting apparatus, comprising: a step of impregnating the methacrylic resin raw material liquid in the electrostatic chuck layer; and a step of curing the methacrylic resin raw material liquid. 6. The method for manufacturing a mounting apparatus according to claim 5, wherein the ceramic sprayed layer is formed while the mounting body is heated. 7. The method for manufacturing a mounting apparatus according to claim 5, wherein the ceramic sprayed layer is formed in a state in which compressed air is supplied to the gas passage provided in the mounting body. .