JP2000031312A - Semiconductor element mounting structure - Google Patents

Abstract

(57) [Problem] In a conventional flip-chip mounting method, it has been difficult to satisfactorily join a semiconductor element to a mounting substrate while maintaining good transmission characteristics of a high-frequency signal. SOLUTION: A lid substrate 5 having a semiconductor element 5 attached to a lower surface central portion is mounted on an upper surface of a mounting substrate 1 with a plurality of gap setting members 8 arranged on an outer peripheral portion of the lower surface, and a semiconductor device. The electrode pads on the lower surface of the element 4 are connected to the connection pads on the upper surface of the mounting substrate 1 via the conductor terminals 7, and the lid substrate 5 and the mounting substrate 1 including the gap setting member 8 are bonded with the sealing resin 9. This is a mounting structure of the semiconductor element 4 obtained. The semiconductor element 4 can be satisfactorily joined to the mounting substrate 1 without deteriorating the transmission characteristics of the high-frequency signal. If the lid substrate 5 and the gap setting member 8 are made conductive, the adverse effect of high frequency noise can be eliminated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mounting structure of a semiconductor element used for a high-frequency semiconductor device such as a microwave band or a millimeter wave band in the information communication field, the semiconductor field, and the like.
In particular, the present invention relates to a semiconductor element mounting structure in which a semiconductor element is mounted on a mounting substrate such as a circuit board or a package by a flip-chip mounting method, and both electrical characteristics and reliability are improved.

[0002]

2. Description of the Related Art In the field of information communication, several hundred M
The frequency has been increasing from microwaves to microwave bands of several GHz to millimeter-wave bands of 30 GHz or more, and wire bonding has been the mainstream in the past for electrical connection in mounting semiconductor elements that handle such high-frequency signals. However, from the viewpoint of avoiding the adverse effects of bonding wires due to the increase in frequency, recently, so-called flip-chip mounting, in which a semiconductor element is directly mounted on a mounting substrate by using conductor terminals as connection bumps for electrical connection, is often used. It has become.

There are various methods and structures for this flip chip mounting. For example, 1) gold bumps are used for electrical connection between electrode pads of a semiconductor element and connection pads of a mounting board, and the semiconductor element and the mounting board are used. 2) A method called an MBB (Micro Bump Bonding) method in which a connection is made by utilizing the shrinkage stress of a resin applied between the substrate and the substrate. 2) As a stud bump connection using a conductive adhesive material, gold is applied to an electrode pad of a semiconductor element. A bump is formed, a conductive paste is applied to the tip of the bump, and the bump is brought into contact with a connection pad of the mounting board. The semiconductor element and the mounting board are pressed and heated to cure the conductive paste. 3) A method of injecting and curing a sealing resin between the substrate and the mounting substrate. 3) As a stud bump connection without using a conductive adhesive material, the electrode pad of the semiconductor element and the mounting substrate are mounted. And the like by a method of bonding the connection pads by bump a pressurized heating only.

[0004]

However, in the above-described flip chip mounting, the mounting structure of a semiconductor element using a conductive adhesive material such as the MBB method of 1) or the stud bump connection method of 2). In such a case, a resin portion must be formed near the bump (conductor terminal) as a so-called underfill or sealing resin for the purpose of enhancing the bonding strength of the semiconductor element to the mounting substrate and improving connection reliability. For this reason, there has been a problem that the characteristic impedance is discontinuous in the resin portion near the bump or the electrical length of the wiring connected by the bump is different from the design, so that the transmission characteristic of the high-frequency signal is deteriorated.

[0005] In the case of a mounting structure in which bonding is performed only by pressing and heating, such as stud bump connection without using a conductive adhesive material in 3), no resin portion is formed near the bumps. Although such adverse effects do not occur, the transmission characteristics of high-frequency signals are good, but there is a problem in that the bonding strength of the semiconductor element is weaker than the mounting structure in which the resin portion is formed, so that the reliability is poor.

Further, when a plurality of semiconductor elements are mounted on the same mounting board by conventional flip chip mounting,
High-frequency signals interfere with each other among a plurality of semiconductor elements, causing noise, deteriorating characteristics, and causing malfunction of the circuit.

The present invention has been made in view of the above-mentioned problems in the prior art, and has as its object to mount a semiconductor element with high accuracy while maintaining good transmission characteristics for high-frequency signals based on flip-chip mounting. Another object of the present invention is to provide a semiconductor element mounting structure that can improve reliability.

Another object of the present invention is that even when a plurality of semiconductor elements are mounted on the same mounting substrate, high-frequency signals interfere with each other between the semiconductor elements to cause noise or a normal circuit. It is an object of the present invention to provide a mounting structure of a semiconductor element having good transmission characteristics for high-frequency signals, which does not stop operation.

[0009]

According to the mounting structure of a semiconductor device of the present invention, a cover substrate having a semiconductor element attached to the lower surface center is provided with a plurality of gap setting members arranged on the outer periphery of the lower surface of the cover substrate. Placed on the upper surface of the mounting substrate with interposition, and bonding the electrode pads formed on the lower surface of the semiconductor element and the connection pads formed on the upper surface of the mounting substrate via conductor terminals, The lid substrate and the mounting substrate, including a gap setting member, are joined with a sealing resin.

The mounting structure of the semiconductor device of the present invention is as follows.
In the above configuration, the plurality of gap setting members are made conductive, and the distance between the gap setting members is set to two times of the operating frequency or noise frequency of the wavelength in the sealing resin of the semiconductor element.
It is characterized in that it is not more than one-half and is grounded.

Further, the mounting structure of the semiconductor element according to the present invention is characterized in that in each of the above-mentioned structures, the lid substrate is made conductive and grounded.

Further, in the semiconductor element mounting structure according to the present invention, in the above-described configuration in which the plurality of gap setting members are made conductive, the lower surface of the lid substrate is made conductive and the gap setting member is interposed therebetween. It is characterized by being grounded.

[0013]

According to the mounting structure of a semiconductor device of the present invention, a semiconductor device having an electrode pad formed on the lower surface and a mounting substrate having a connection pad corresponding to the electrode pad formed on the upper surface are projected. In a mounting structure in which flip-chip mounting is performed face-down via a conductive terminal in the shape of a ball or a ball, a semiconductor element is previously attached to the center of the lower surface of the lid substrate, and the outer peripheral portion of the lower surface of the lid substrate, that is, the semiconductor element is mounted. It is placed on the top surface of the mounting substrate with a plurality of gap setting members arranged around it, and the electrode pads of the semiconductor element and the connection pads of the mounting substrate are joined via conductive terminals, and mounted on the lid substrate. The lid is bonded to the mounting board with the sealing resin because the board is aligned with the mounting board and bonded with the sealing resin formed so as to include the gap setting member therein. The bonding between the semiconductor element and the mounting board can be made stronger by the plate.

Therefore, there is no need to form a resin portion such as an underfill or a sealing resin in the vicinity of the conductor terminal between the semiconductor element and the mounting substrate for the purpose of strengthening the bonding force and improving the connection reliability. Discontinuity of characteristic impedance is not caused by the resin part near the conductor terminal, and the electrical length of the wiring connected by the conductor terminal is different from the design, so that the transmission characteristics of the high frequency signal will not be deteriorated. As compared with a flip-chip mounting structure that requires a resin portion such as a sealing resin, a semiconductor element mounting structure that can mount a semiconductor element without deteriorating transmission characteristics of a high-frequency signal is provided. In addition, since the semiconductor element is sealed with the lid substrate and the sealing resin, the mounting structure is stable and highly reliable against environmental changes.

Further, by adjusting the size of the gap setting member which is disposed in the sealing resin and is in contact with and interposed between the lid substrate and the mounting substrate, the electrode pad of the semiconductor element and the connection pad of the mounting substrate are adjusted. And the amount of pressure applied to the conductor terminal that joins them can also be adjusted. Therefore, the shape, material or number of conductor terminals (protruding electrodes), the material of the semiconductor element, An optimal mounting structure according to the size can be realized.

Further, if the cover substrate is made of a material having good thermal conductivity, heat generated during operation of the semiconductor element can be efficiently dissipated by the cover substrate, and the gap setting member also has good heat conductivity. In this case, heat can be conducted and dissipated to the mounting substrate via these components, and a highly reliable mounting structure with stable characteristics can be obtained.

According to the semiconductor element mounting structure of the present invention, the plurality of gap setting members are made conductive, and the interval between them is set to the operating frequency of the semiconductor element or the noise frequency in the sealing resin of the noise frequency. If it is less than one-half and grounded, the amount of high-frequency noise radiated from the semiconductor element to the outside is reduced because the gap setting member functions as an electromagnetic wave shield. Therefore, when a plurality of semiconductor elements are mounted on the same surface of a mounting board in such a mounting structure, the semiconductor elements emit radiation compared to a case where a plurality of semiconductor elements are mounted in a conventional mounting structure. It is possible to reduce the possibility that the matched high-frequency noises interfere with each other and adversely affect each other's operation, suppress the deterioration of the characteristics, and operate the high-frequency circuit stably and normally.

The gap setting member may be either insulative or conductive. To make the gap setting member conductive, the gap setting member is made of various metals, solders, brazing materials and the like. It may be formed of a conductive material, or may be formed of an insulating material having a surface coated with various metal layers, plating layers, solder layers, or other conductive films. The shape is spherical, cylindrical, elliptical, prismatic, plate-like, conical, pyramidal,
Any shape, such as a truncated cone, a truncated pyramid, or a deformed version thereof, can be used as long as it can be set between the mounting substrate and the lid substrate and brought into contact with both to set a predetermined gap. . The dimensions in the direction of setting the gap include the thickness of the semiconductor element, the thickness of an adhesive or the like for attaching the lid substrate to the semiconductor element, and the conductor after the electrode pad and the connection pad are joined. The dimensions may be determined based on the sum of the heights of the terminals, and other dimensions may be determined depending on the material of the gap setting member so as to maintain the strength not to be broken when the lid substrate and the mounting substrate are weighted.

Such a gap setting member may be made of, for example, Au. Ag, which is conductive and has good thermal conductivity.
-A metal such as Cu or an alloy such as Pb-Sn-Au-Sn may be used.

When the gap setting member is conductive, disposing the gap setting member on or near the signal wiring may cause a characteristic impedance mismatch of the signal wiring. It is preferable to arrange them avoiding them. Also in this case, in order to avoid mutual interference and noise of the semiconductor element, the interval between the gap setting members sandwiching the signal wiring should be equal to or less than half of the operating frequency or noise frequency of the semiconductor element in the sealing resin. By doing so, it can function as an electromagnetic wave shield.

Further, according to the mounting structure of the semiconductor device of the present invention, when the cover substrate is made conductive and grounded, the cover substrate functions as an electromagnetic wave shield, and the high frequency noise of the semiconductor device is reduced. The amount of radiation to the outside is reduced, and the amount of electromagnetic waves entering from the outside is also reduced. Therefore, in such a mounting structure, it is possible to reduce the possibility that high-frequency noise radiated by the semiconductor element adversely affects an external electric circuit, or that high-frequency noise enters from outside and adversely affects the operation of the semiconductor element. Is suppressed, and the high-frequency circuit can be operated stably and normally. Also, even when a plurality of semiconductor elements are mounted on the same surface of the mounting board, high-frequency noise radiated by the semiconductor elements is mutually different as compared with a case where a plurality of semiconductor elements are mounted in a conventional mounting structure. And adversely affect each other's operation due to interference.

In particular, the plurality of gap setting members are made conductive, and the interval between them is set to be equal to or less than half the wavelength of the operating frequency or noise frequency of the semiconductor element in the sealing resin, and grounded. When the board is made conductive and grounded, the function of the board as an electromagnetic wave shield becomes extremely good, and high-frequency noise can be hardly radiated to the outside and intrusion from the outside can be almost eliminated. It can be operated stably and normally.

Further, in order to ground the gap setting member and the lid substrate, one of the gap setting members is connected to a ground wiring or a ground electrode of the mounting substrate, and the lid substrate is grounded and joined thereto via the connection. The other gap setting members can also be integrally grounded, so that it is not necessary to route or add wiring for grounding, and it is possible to easily realize a stable grounding state while achieving downsizing. Becomes

The lid substrate may be either insulative or conductive. To make the lid substrate conductive in this way, the lid substrate is made of a plate of various metals or other conductive materials. It may be formed of a plate-like body of an insulating material having a surface coated with various metal layers, plating layers, solder layers, and other conductive films. In addition, the shape thereof is a flat plate, such as a square, a rectangle, a rhombus, or a rectangle, a circle, an ellipse, or a shape obtained by deforming them. Any one that can function as a sealing lid after mounting a semiconductor element according to the specifications of the mounting substrate, such as a cap-shaped one provided with a wall at a portion where a gap setting member is interposed therebetween, Shape.

As described above, when the lid substrate is formed in a flat plate shape, the processing of the lid substrate is easy and the mounting structure can be made simple. When the lid substrate is formed in a cap shape, it functions as an electromagnetic wave shield. Can be further improved.

The size may be determined in consideration of the size of the semiconductor element, the size of the gap setting member, the width of the sealing resin, the application margin of the sealing resin, and the like.

As such a lid substrate, a general one as a lid in a conventional package may be used as a substrate having good conductivity and good thermal conductivity.
It is preferable to use a metal such as a metal such as -Ni-Co alloy or Fe-Ni alloy / Ni, or ceramics.

Further, according to the semiconductor element mounting structure of the present invention, the plurality of gap setting members are made conductive, and the interval between the gap setting members is determined by the wavelength of the operating frequency or noise frequency of the semiconductor element in the sealing resin. When it is grounded by half or less and grounded, and when the lower surface of the lid substrate, that is, the main surface on which the semiconductor element is attached is made conductive and grounded via a gap setting member, the function as an electromagnetic wave shield is performed. It is extremely good, it can hardly radiate high frequency noise to the outside and invade from the outside, and it can easily ground the attached semiconductor element via its main surface. The grounding state of the element can be stabilized, and the high-frequency circuit can be operated extremely stably and normally.

Hereinafter, the mounting structure of the semiconductor device of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a sectional view showing an example of an embodiment of a mounting structure of a semiconductor device according to the present invention. In FIG. 1, 1
Is a mounting substrate such as a wiring board or a multilayer wiring board formed of various ceramics or organic insulating materials and the like and a wiring conductor, or a base of a package for storing semiconductor elements.
Is a signal wiring formed on the mounting substrate 1, and 3 is a connection pad formed at an end of the signal wiring 2 and electrically connected thereto.

Reference numeral 4 denotes a semiconductor element, 5 denotes a lid substrate, and the semiconductor element 4 has an electrode pad (not shown) on the front surface (lower surface in the figure). It is so-called die-bonded and attached to the center of the lower surface of the lid substrate 5 with an adhesive 6 such as tin. The electrode pads formed on the surface of the semiconductor element 4 and the connection pads 3 correspondingly formed on the upper surface of the mounting substrate 1 are formed by connection bumps such as gold bumps or solder bumps or conductive paste. The connection is made via the conductor terminals 7, whereby the internal wiring of the semiconductor element 4 and the signal wiring 2 of the mounting board 1 are electrically connected.

The conductor terminals 7 may be made of resin balls whose surfaces are made conductive by gold plating or the like. If resin balls are used, the mounting substrate 1 and the lid substrate 5 may be used.
Even if the gap slightly changes, the amount of change can be canceled by the elasticity of the resin, and good bonding can be achieved.

A plurality of reference numerals 8 are arranged on the outer peripheral portion of the lower surface of the lid substrate 5, that is, around the semiconductor element 4, and are interposed between the lid substrate 5 and the mounting substrate 1 so that the gap between them is a predetermined size. Is a sealing resin which is formed so as to include the gap setting member 8 therein and which joins the lid substrate 5 and the mounting substrate 1. By forming the sealing resin 9 around the semiconductor element 4 in this manner, the semiconductor element 4 mounted on the mounting substrate 1 via the conductor terminals 7 is sealed with the mounting substrate 1 and the lid substrate 5. It is sealed inside the space surrounded by the resin 9.

For the mounting structure of the semiconductor element of the present invention, when applying a sealing resin 9 for bonding the lid substrate 5 to a portion of the upper surface of the mounting substrate 1 facing the outer peripheral portion of the lower surface of the lid substrate 5. Alternatively, the gap setting member 8 may be mixed with the sealing resin 9 and applied with a dispenser or the like. Further, after only the sealing resin is applied, the gap setting member 8 may be arranged at a desired position, or after the gap setting member 8 is arranged, the sealing resin may be applied.

The signal wiring 2 is made of, for example, Cr / Cu / Ni /
It is formed of a wiring conductor made of Au, Ti / Pd / Au, or the like.
Calculated from the thickness and the like, the operating frequency of the semiconductor element 4, and the like, the characteristic impedance is usually set so as to be 50Ω.

Reference numeral 10 denotes an insulating film formed as necessary to ensure the insulation of the signal wiring 2. The insulating film 10 is used to insulate the signal wiring 2 from each other or to form a conductive gap on the signal wiring 2 as shown in FIG. When the setting member 8 is located and insulated from it,
For example, it is appropriately formed of polyimide or the like. In addition, even if the gap setting member 8 is directly in contact with the upper surface of the mounting substrate 1,
It may be in contact with a ground electrode pad or a ground wiring of the mounting substrate 1 or may be directly in contact with the signal wiring 2 as an insulating material.

Thus, the semiconductor element 4 is placed on the lid substrate 5.
After mounting, the electrode pads of the semiconductor element 4 and the mounting substrate 1
And the connection pads 3 are connected via the conductor terminals 7, and a plurality of cover substrates 5 and the mounting substrate 1 are arranged around the semiconductor element 4 so as to be interposed between the lid substrate 5 and the mounting substrate 1. Since the gap setting member 8 and the sealing resin 9 are joined together, the gap between the mounting substrate 1 and the cover substrate 5 can be adjusted by the gap setting member 8, and the semiconductor element 4 can be adjusted by the gap adjustment. The amount of pressurization of the conductor terminal 7 that joins the electrode pad and the connection pad 3 of the mounting substrate 1 can be adjusted, and the semiconductor element 4 is flip-chip mounted on the mounting substrate 1 in a desired good mounting state. In addition, the semiconductor element 4 is sealed with the lid substrate 5 and the sealing resin 9 to provide a highly reliable mounting structure that can be operated stably with respect to environmental changes.

Next, another example of the embodiment of the mounting structure of the semiconductor device of the present invention is shown in a perspective view in FIG. In FIG. 2, the same parts as those in FIG. 1 are denoted by the same reference numerals,
Adhesive 6, sealing resin 9, insulating film
10 is not shown, and a part of the lid substrate 5 is cut away.

In this example, the gap setting member 8 is in direct contact with the mounting substrate 1 and the lid substrate 5, respectively. Setting becomes easier. In addition, a plurality of conductive elements are arranged at intervals equal to or less than half the wavelength of the operating frequency of the semiconductor element 4 in the sealing resin so as to have a function as an electromagnetic wave shield.

When conductors are arranged at an interval of one half of the wavelength of the electromagnetic wave, a current flows between the conductors, and the electromagnetic wave passes through the conductor. If there is any electromagnetic wave, the electromagnetic wave will not pass. Therefore, according to such a mounting structure, the conductive gap setting member 8 is arranged at an interval of half or less of the wavelength, so that the electromagnetic wave does not leak to the outside.

In this case, the conductive gap setting member 8
Is set to be not more than 分 の of the wavelength of the operating frequency of the semiconductor element 4 in the sealing resin, the electromagnetic wave can be more reliably cut off, and it can function well as an electromagnetic wave shield. Therefore, it becomes more preferable.

FIG. 3 is a top view of a mounting substrate of another embodiment of the semiconductor device mounting structure of the present invention, and FIG. 4 is a perspective view of the mounting structure similar to FIG. The figure is shown. In these drawings, the same parts as those in FIGS. 1 and 2 are denoted by the same reference numerals.

FIG. 3A is a top view of the mounting substrate 1,
(B) is a top view showing a pattern of the signal wiring 2 and other wiring conductors formed on the upper surface of the mounting substrate 1, (c) is a top view showing a pattern of the insulating film 10, and the wiring shown in (b) The mounting substrate 1 shown in (a) is formed by superposing and forming the insulating film pattern shown in (c) on the conductor pattern.

3 and 4, reference numeral 1 denotes a mounting substrate, 2 denotes a signal wiring formed on an upper surface thereof, 3 denotes a connection pad formed corresponding to an electrode pad of the semiconductor element 4, and 10 denotes an insulating pad. It is a membrane. In the insulating film 10, a connection pad window 3 'for exposing the wiring conductor of the signal wiring 2 as the connection pad 3 is formed at a position overlapping with the signal wiring 2 and at a position corresponding to the electrode pad of the semiconductor element 4 to be mounted. ing.
Note that the illustration of the insulating film 10 is omitted in FIG.

Reference numeral 11 denotes a ground conductor formed on the upper surface of the mounting substrate 1 at a position opposed to the outer peripheral portion of the lower surface of the lid substrate 5. In this example, a conductive gap setting member 8 is disposed on the ground conductor 11. Thereby, the gap setting member 8 is grounded, and the conductive lid substrate 5 is also grounded via the gap setting member 8. Reference numeral 12 denotes a power supply line to the semiconductor element 4. The insulating film 10 is formed in a pattern that avoids the ground conductor 11 and ensures insulation between the signal wiring 2 and the ground and insulation between the power supply line 12 and the ground.

According to such a mounting structure, since the insulating film 10 is formed so as to cover the power supply line 12, even if the conductive gap setting member 8 is disposed above the power supply line 12, the short circuit occurs. Therefore, it is easy to arrange the conductive gap setting member 8 at an interval equal to or less than half the wavelength of the operating frequency of the semiconductor element 4 in the sealing resin.

It should be noted that the above is only an example of the embodiment of the present invention, and the present invention is not limited to the embodiment. Various changes and improvements can be made without departing from the gist of the present invention. No problem. For example, the insulating film 10
May be formed on the entire surface of the mounting substrate 1, and a connection pad window may be formed at a required location on the ground conductor 11 or a required location on the signal wiring 2.

Further, the lid substrate 5 may be formed in a cap shape having a side wall on the outer periphery of the lower surface, and the gap setting member 8 may be interposed between the end of the side wall and the upper surface of the mounting substrate 1.

A plurality of semiconductor elements 4 are attached to the center of the lower surface of the lid substrate 5, and a gap setting member 8 is arranged between the semiconductor elements 4 together with the outer peripheral portion of the lower surface of the lid substrate 5, so that a so-called multi-chip It may be a modular mounting structure.

[0050]

As described above, according to the semiconductor device mounting structure of the present invention, a semiconductor device is mounted on the lower surface of the lid substrate in advance, and a plurality of gap setting members are arranged on the outer peripheral portion of the lower surface of the lid substrate. Placed on the top surface of the mounting board with members interposed, the electrode pads of the semiconductor element and the connection pads of the mounting board are joined via conductor terminals, and the lid substrate and the mounting board are placed therein. Because the sealing resin formed so as to include the gap setting member is used, the bonding between the semiconductor element and the mounting substrate is strengthened by the lid substrate bonded to the mounting substrate with the sealing resin. It is not necessary to form a resin part such as underfill near the conductor terminal,
The semiconductor element is mounted with good high-frequency signal transmission characteristics without discontinuity in the characteristic impedance near the conductor terminal or the deterioration of the transmission characteristics of high-frequency signals due to differences in the electrical length of the connecting wires from the design. can do. In addition, since the semiconductor element is hermetically sealed with the lid substrate and the sealing resin, the semiconductor element is stable and highly reliable against environmental changes.

Therefore, according to the present invention, there is provided a semiconductor element mounting structure which is based on flip-chip mounting, can mount a semiconductor element with high accuracy while maintaining good transmission characteristics for high frequency signals, and can improve reliability. I was able to.

Further, if the lid substrate and the gap setting member are made of a material having good thermal conductivity, heat generated during the operation of the semiconductor element can be efficiently dissipated through them, and the characteristics are stable and the reliability is high. Mounting structure.

According to the semiconductor element mounting structure of the present invention, the plurality of gap setting members are made conductive, and the interval between them is set to the operating frequency of the semiconductor element or the noise frequency of 4 in the sealing resin. If it is less than one-half and grounded, the amount of high-frequency noise radiated from the semiconductor elements to the outside is reduced, and the high-frequency noise radiated by the semiconductor elements interferes with each other to affect each other's operation. The adverse effects can be reduced, and the deterioration of the characteristics can be suppressed.
The high-frequency circuit can be operated stably and normally.

Further, according to the mounting structure of the semiconductor element of the present invention, when the lid substrate is made conductive and grounded, the lid substrate functions as an electromagnetic wave shield, thereby reducing the high frequency noise of the semiconductor element. The amount of radiation to the outside is reduced, and the amount of intrusion of electromagnetic waves from the outside is also reduced. In addition, it is possible to reduce the possibility that the semiconductor elements interfere with each other and adversely affect each other's operations, suppress the deterioration of the characteristics, and operate the high-frequency circuit stably and normally.

In particular, the plurality of gap setting members are made conductive, the interval between them is set to be not more than 波長 of the wavelength of the operating frequency or noise frequency of the semiconductor element in the sealing resin, and grounded. When the substrate is made conductive and grounded, the function as an electromagnetic wave shield thereby becomes extremely good.

Further, according to the semiconductor element mounting structure of the present invention, the plurality of gap setting members are made conductive, and the interval between them is determined by the wavelength of the operating frequency or noise frequency of the semiconductor element in the sealing resin. When it is grounded via a gap setting member while the lower surface of the lid substrate is conductive and grounded through a quarter or less, the function as an electromagnetic wave shield becomes extremely good,
Grounding of the attached semiconductor element can be easily performed.

Therefore, according to the present invention, even when a plurality of semiconductor elements are mounted on the same mounting substrate, high-frequency signals interfere with each other between the semiconductor elements to cause noise or the circuit operates normally. It is possible to provide a mounting structure of a semiconductor element having good transmission characteristics for high-frequency signals, which does not disappear.

Further, according to the semiconductor element mounting structure of the present invention, the semiconductor element can be mounted using a conventional mounting apparatus for flip chip mounting, and the semiconductor element is mounted on the lower surface of the lid substrate. Therefore, it is possible to perform flip-chip mounting not only on a semiconductor element designed for flip-chip but also on a conventional semiconductor element designed for wire bonding. Since the back surface of the semiconductor element is in contact with the lid substrate, a mounting structure having excellent heat dissipation is obtained.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating an example of an embodiment of a semiconductor element mounting structure according to the present invention.

FIG. 2 is a perspective view showing another example of the embodiment of the mounting structure of the semiconductor element of the present invention.

3A is a top view of a mounting board in an embodiment of a semiconductor element mounting structure according to the present invention, FIG. 3B is a top view showing a wiring conductor pattern, and FIG. It is a top view showing a pattern.

FIG. 4 is a perspective view showing still another example of the embodiment of the mounting structure of the semiconductor element of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Mounting board 2 ... Signal wiring 3 ... Connection pad 4 ... Semiconductor element 5 ... Lid board 7 ... Conductor terminal 8 ... Gap setting member 9 ... Sealing resin

Claims (4)

[Claims] 1. A lid substrate having a semiconductor element attached to a lower central portion thereof is mounted on an upper surface of a mounting substrate with a plurality of gap setting members arranged on an outer peripheral portion of a lower surface of the lid substrate, and An electrode pad formed on the lower surface of the semiconductor element and a connection pad formed on the upper surface of the mounting substrate are joined via conductor terminals, and the lid substrate and the mounting substrate including the gap setting member are included. A mounting structure of a semiconductor element, wherein a gap is joined with a sealing resin. 2. A method according to claim 1, wherein the plurality of gap setting members are made conductive, and an interval between the plurality of gap setting members is set to a half or less of a wavelength of an operating frequency or a noise frequency of the semiconductor element in the sealing resin and grounded. The mounting structure of a semiconductor device according to claim 1, wherein: 3. The mounting structure of a semiconductor device according to claim 1, wherein said lid substrate is made conductive and grounded. 4. The mounting structure of a semiconductor device according to claim 2, wherein the lower surface of said lid substrate is made conductive and grounded via said gap setting member.