JP4127589B2 - High frequency semiconductor device package and high frequency semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention is used in a communication device or sensor or the like using microwaves and millimeter waves, to a high-frequency semiconductor device having an improved method of mounting a high-frequency semiconductor element.
[0002]
[Prior art]
Conventionally, in a module whose main circuit element is a high-frequency semiconductor element that handles microwaves and millimeter waves, the high-frequency semiconductor element is housed in a semiconductor package whose main component is a metal housing. The high frequency semiconductor element is connected to a connection electrode or a line conductor disposed around the high frequency semiconductor element for connection to the external electric circuit board by wire bonding or the like, thereby connecting the high frequency semiconductor element to the external electric circuit board. An element is mounted on a semiconductor package to constitute a high-frequency semiconductor device.
[0003]
However, since it is difficult to achieve downsizing, cost reduction, and high performance by such a mounting method, in recent years, development of mounting methods of high-frequency semiconductor elements by so-called flip chip connection has been actively performed. ing.
[0004]
This flip-chip mounting method can shorten the connection path between the high-frequency semiconductor element and the connection electrode or line conductor to which the high-frequency semiconductor element is connected, thereby reducing the loss of the high-frequency signal and improving the performance. Become.
[0005]
[Problems to be solved by the invention]
However, in general, the flip-chip mounting method uses only one side of a semiconductor element on which connection terminal electrodes are formed, and therefore it is difficult to use a microstrip line having good high-frequency characteristics for wiring in the semiconductor element. There is a problem. Further, since the semiconductor element is not in close contact with the mounting portion, there is a problem that it is difficult to dissipate heat generated from the semiconductor element.
[0006]
Of these, regarding the problem of heat dissipation, as seen in, for example, Japanese Patent Laid-Open No. 10-256429, the back surface of the semiconductor element is fixed to a package body with good heat dissipation, and the surface on which the wiring and terminal electrodes are formed is provided as another auxiliary. Countermeasures such as flip chip mounting on a typical wiring board are being taken. In such a structure, the auxiliary wiring board must be made of a deformable resin, or the height (depth) accuracy of the recess for housing the semiconductor element of the package body must be suppressed to several μm or less. Such a response is required.
[0007]
However, deformable resins generally have poor electrical characteristics with respect to high frequencies, and there is a problem that they are difficult to use for high frequency semiconductor device packages used in microwaves and millimeter waves. Therefore, in the package used in the microwave and the millimeter wave, in order to use the auxiliary wiring substrate, the dimensional tolerance of the package has to be strict, and the mounting cost is increased because the flip chip mounting is used. There was a problem that it would be.
[0008]
In recent years, application of microwave or millimeter wave frequencies to automotive radars, large-capacity wireless communication systems, and the like has been studied. Due to their nature, these applications require the mass production of low cost devices. Therefore, there is a demand for a mounting technology that is small in size and low in price while having high performance in the mounting technology.
[0009]
In one direction of such mounting technology, a high-frequency semiconductor device called a multichip module in which all semiconductor elements constituting circuit elements are mounted in one package may be configured. This contributes to the overall miniaturization of the circuit, and at the same time, the loss in the line conductor, which is a transmission line, cannot be ignored at high frequencies such as microwaves or millimeter waves. It is possible to reduce the loss as a short one and obtain a high-frequency semiconductor device suitable for the new application.
[0010]
On the other hand, since a high-frequency semiconductor element does not necessarily have a high yield rate at the time of manufacture, it is preferable to have a structure in which a semiconductor element can be replaced for each chip when a defect is found after mounting the semiconductor element. In order to obtain such a structure, a low-cost chip carrier is required as an auxiliary wiring substrate for mounting.
[0011]
As a method for mounting a high-frequency semiconductor element on a chip carrier or the like as an auxiliary wiring substrate, the wire bonding method and the flip chip mounting method as described above are used. Of these, the wire bonding method has a reactance component that cannot be ignored especially in the high-frequency region because the wire connecting the semiconductor element and the substrate has a reactance component that is connected to the same connection pad with multiple wires, or is not a wire. It is necessary to take measures such as using a small ribbon. Further, since the connection between the semiconductor element and the chip carrier is a sequential connection for each connection pad, it takes a process man-hour and is not suitable for cost reduction.
[0012]
By the way, the high-frequency semiconductor element can be classified into a microstrip line type and a coplanar line type according to the structure of a line conductor as a transmission line formed on the surface thereof. Among these, the microstrip line type has a ground plane (ground electrode) on the back surface of the semiconductor element, and the microstrip line is mainly used for the signal line on the front side. On the other hand, the coplanar line type has no ground electrode on the back surface and has a structure in which ground conductors are arranged on both sides of the signal line on the front surface.
[0013]
The coplanar line type has a grounding conductor on the front side, so there is no need for backside processing or via hole processing to provide a grounding surface on the backside, or between the semiconductor element and the mounting board when flip-chip mounting. Although it has features such as easy connection between ground electrodes, a ground conductor is always required next to the signal line, so loss tends to increase when the signal line is bent or branched, It is a form that is difficult to miniaturize, such as a so-called air bridge that connects ground conductors with a ribbon or the like, and neither is superior to the microstrip line type.
[0014]
However, if a package for a high-frequency semiconductor device having a structure that can be easily flip-chip mounted using a microstrip line type semiconductor element, it is possible to cover some of the weak points of the microstrip line type and have excellent high frequency characteristics. Can be utilized.
[0015]
A microstrip line type high-frequency semiconductor element generally has a grounding pad formed on the surface, and it is relatively easy to connect the grounding surface of the substrate and the grounding surface of the element. However, when flip chip mounting is performed, at the connection portion between the semiconductor element and the mounting substrate, the grounding surface of the substrate, the grounding pad of the substrate, the grounding pad of the element, the grounding surface of the element, etc. around the signal line It is inevitable to form a small area where the ground planes overlap each other.
[0016]
When such a region where the ground planes are parallel is formed, the parallel plate mode in which electromagnetic waves propagate in the gap generally becomes stable from a relatively low frequency, so unnecessary radiation is formed and transmission loss increases. There is a problem that. Therefore, when a microstrip line type high frequency semiconductor device is to be flip-chip mounted, it is important to have a structure in which a parallel plate mode is not easily formed between the semiconductor device and the substrate.
[0017]
Based on the above, as a mounting technology for high-frequency semiconductor devices for new microwave / millimeter-wave applications such as automotive radar and high-capacity wireless communication, microstrip line type high-frequency semiconductor elements can be flip-chip mounted. It is desired to develop a package for a high-frequency semiconductor device for a multi-chip module that can use a chip carrier that is an auxiliary wiring substrate and that can be easily mounted.
[0018]
The present invention has been devised in view of the above circumstances, and its object is can be conveniently flip-chip mounting a semiconductor element for high frequency micro-strip line type, and the insertion loss for high frequency signal has a low and to provide a high-frequency semiconductor device.
[0019]
Frequency semiconductor equipment of the present invention, a high frequency semiconductor device having a ground electrode to the signal electrode and the back to the surface, and a wiring board which have a recess on the upper surface of the high frequency semiconductor element is accommodated, the opening of the recess A package main body having a first line conductor provided in the periphery, and a plurality of ground projecting terminals that are in contact with the ground electrode on the bottom surface of the recess and electrically connected while being deformed ; A mounting portion for mounting a semiconductor element is provided on the lower surface, an insulating substrate larger than the opening of the recess, and provided on the lower surface of the insulating substrate, having one end on the mounting portion side and the other end on the opposite side, the end the signal electrodes, in which the other end comprises a a mounting substrate having a second line conductor which is electrically connected to the first line conductor.
[0020]
The plurality of grounding protruding terminals are preferably bump-shaped.
[0021]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an exemplary embodiment of the present invention will be described in detail with reference to the drawings.
[0022]
FIG. 1 is a cross-sectional view showing an example of an embodiment of a package for a high-frequency semiconductor device and a high-frequency semiconductor device using the same according to the present invention, and shows an example in which a multichip module is configured. FIG. 2 is an enlarged cross-sectional view of a main part for explaining the configuration of the mounting portion of the high-frequency semiconductor element.
[0023]
In these drawings, 1 is a wiring board, 8 is a mounting board mounted on the wiring board 1, and 12 is a high-frequency semiconductor element mounted and mounted on the mounting board 8. The high-frequency semiconductor element 12 has a signal electrode 13 on the front surface side and a ground electrode 14 on the back surface side.
[0024]
The wiring substrate 1 constitutes a package body, and has a recess 3 for accommodating the high-frequency semiconductor element 12 on the upper surface of the insulating substrate 2. A plurality of first line conductors 4 as high-frequency transmission lines to which the signal electrodes 13 of the semiconductor element 12 are electrically connected are formed corresponding to the signal electrodes 13. Reference numeral 4 denotes a first line conductor, which is connected to a wiring conductor, a through conductor, a surface wiring conductor, a connection pad, and the like inside the insulating base 2.
[0025]
Reference numeral 5 denotes a plurality of grounding protruding terminals formed on the bottom surface of the recess 3. These grounding protruding terminals 5 are in contact with the ground electrode 14 on the back surface of the high-frequency semiconductor element 12 and are electrically connected to the ground electrode 14 while being deformed. The grounding protruding terminal 5 is connected to the ground conductor 7 in the insulating base 2 and grounded.
[0026]
The mounting substrate 8 has a mounting portion 10 for the high-frequency semiconductor element 12 on the lower surface of the insulating substrate 9 having a size larger than the opening of the recess 3, and the second line conductor 11 extends from the vicinity of the mounting portion 10 on the lower surface to the peripheral portion. Is formed. One end of the second line conductor 11 on the mounting portion 10 side is electrically connected to the signal electrode 13 of the high-frequency semiconductor element 12 and the other end is electrically connected to the first line conductor 4 around the opening of the recess 3.
[0027]
Reference numeral 15 denotes a lid, which is bonded to the opening of the second recess provided on the upper surface of the wiring board 1 so as to accommodate the mounting board 8 via a sealing material, and the mounting board 8 and the high-frequency semiconductor element are contained therein. This is for hermetically sealing 12. The lid 15 is not particularly required when the mounting substrate 8 is covered and sealed with a sealing resin or the like.
[0028]
According to the high-frequency semiconductor device package and the high-frequency semiconductor device of the present invention, the high-frequency semiconductor element 12 is mounted on the mounting substrate 8 by flip-chip mounting as described above. The high frequency semiconductor element 12 is accommodated in the recess 3 so as to close the opening of the recess 3 formed on the upper surface, and the signal electrode 13 on the surface of the semiconductor element 12 is connected to the package body via the second line conductor 11 of the mounting substrate 8. On the other hand, the ground electrode 14 on the back surface of the semiconductor element 12 is brought into contact with a plurality of ground projecting terminals 5 formed on the bottom surface of the recess 3, and this ground projecting terminal is connected. Since 5 is deformed and electrically connected, it is composed of a chip carrier on which the high-frequency semiconductor element 12 is mounted and a package body on which the chip carrier is mounted. Thus, as a method of connecting the ground plane when the microstrip line type high frequency semiconductor element 12 is flip-chip mounted on the chip carrier, the semiconductor element 12 and the wiring board 1 of the package body can be electrically connected with a short wiring length. In addition, since it is possible to prevent the formation of a parallel ground plane that forms a parallel plate mode between them, the microstrip line type high frequency semiconductor element 12 can be simply flip-chip mounted, and It can have excellent high frequency characteristics with low insertion loss for high frequency signals.
[0029]
In addition, the connection of the semiconductor element 12 to the ground surface is brought into contact with the grounding projecting terminal 5 on the back surface of the ground electrode 14 instead of the element surface side on which the signal electrode 13 and the signal wiring are formed, and this is deformed and directly packaged. Since it is electrically connected to the grounding surface of the main body, when the mounting substrate 8 is mounted in the recess 3 of the wiring substrate 1, the grounding protruding terminal 5 provided on the bottom surface of the recess 3 causes the back surface of the high-frequency semiconductor element 12 to be connected. Sufficient electrical contact with the ground electrode 14 can be obtained, and sufficient grounding of the high-frequency semiconductor element 12 can be achieved.
[0030]
A plurality of such recesses 3 are formed in the package body, and a plurality of mounting substrates 8 on which the high-frequency semiconductor elements 12 are mounted are mounted on the respective recesses 3 to easily constitute a multichip module. Can do.
[0031]
On the other hand, according to the high-frequency semiconductor device of the present invention, since the high-frequency semiconductor device package having the above-described features is used, the microstrip line type high-frequency semiconductor element 12 is similarly provided. It has excellent high-frequency characteristics that are easily flip-chip mounted and has low insertion loss for high-frequency signals. In addition, since the high-frequency semiconductor element 12 can be easily removed from the package, the high-frequency semiconductor element 12 can be easily replaced. The multichip module can be easily configured.
[0032]
In the present invention, the wiring board 1 can be a variety of wiring boards used for high-frequency semiconductor element storage packages, multilayer circuit boards, and the like, and the shape and size of the recesses 3 of the high-frequency semiconductor element 12 to be accommodated. What is necessary is just to set suitably according to a magnitude | size or a specification. The first line conductor 4 may be a microstrip line or a coplanar line as a high-frequency transmission line, and may be appropriately formed according to the specifications of the high-frequency semiconductor device or the high-frequency semiconductor element 12.
[0033]
The grounding protruding terminal 5 formed on the bottom surface of the recess 3 can be grounded by a single one depending on the specifications of the high-frequency semiconductor element 12, but can be formed from the viewpoint of sufficient grounding. It is desirable to form as many as possible with respect to the ground electrode 14. Further, for example, it is desirable to dispose the ground protruding terminal 15 connected to the ground electrode 14 immediately below the connecting portion between the high frequency semiconductor element 12 and the mounting substrate 8.
[0034]
Also, in order to make the ground electrode 14 of the high-frequency semiconductor element 12 abut and make an electrical connection while being easily deformed, the ground projecting terminal 15 has no surface oxidation and is an electrode terminal as small as possible. Is desirable. Such a grounding protruding terminal 15 may be formed in a so-called bump shape using a device such as a wire bonder using, for example, a gold wire.
[0035]
FIGS. 3A to 3C show examples of grounding protruding terminals 5 suitable for the present invention in a side view or a sectional view, respectively. The grounding protruding terminal 5 shown in FIG. 3A has the same bump shape as that shown in FIG. 3 and can be formed by cutting a gold wire short using a wire bonding apparatus. The grounding protruding terminal 5 ′ shown in FIG. 3B is a bump formed by forming a small loop of gold wire using a wire bonding apparatus. The grounding protruding terminal 5 ″ shown in FIG. 3C uses a bump produced by soldering metal particles. In addition, the grounding protruding terminal may be a so-called bump having conductivity. Any shape can be used, but from the point of contact with the ground electrode 14 of the high-frequency semiconductor element 12 and sufficient grounding, it is composed of a conductor with low resistance and a bump shape with a large contact area It is desirable that
[0036]
In general, the high-frequency semiconductor element 12 is often formed by using GaAs as a semiconductor material, but many of the element substrates are thin and weak in strength. Therefore, when the mounting substrate 8 on which the high-frequency semiconductor element 12 is mounted is mounted on the wiring board 1 and the ground electrode 14 of the high-frequency semiconductor element 12 is brought into contact with the ground protruding terminal 5, sufficient contact is obtained, and In order not to mechanically destroy the semiconductor element 12, the grounding protruding terminal 5 is desirably a bump having a soft material and a structure that is easily deformed as described above.
[0037]
Further, in order to make the grounding due to the contact between the grounding protruding terminal 5 and the grounding electrode 14 more complete, metal bonding may be performed between them using solder or the like.
[0038]
As the mounting substrate 8, for example, a substrate in which a predetermined wiring conductor pattern is formed on the surface of an alumina ceramic substrate by a thin film forming method or the like may be used.
[0039]
Like the first line conductor 4, the second line conductor 11 formed on the lower surface of the mounting substrate 8 may be a microstrip line or a coplanar line as a high-frequency transmission line. According to the specifications of the semiconductor element 12, the signal electrode 13 and the first line conductor 4 may be appropriately formed so as to be electrically connected with good high frequency characteristics.
[0040]
FIG. 4 is a plan view showing an example of the wiring pattern of the second line conductor 13 formed on the mounting substrate 8. On the lower surface of the insulating substrate 9 of the mounting substrate 9, a mounting portion 10 is provided in a portion surrounded by a square dotted line, and the high-frequency semiconductor element 12 is flip-chip mounted on the mounting portion 10.
[0041]
In this example, the second line conductor 13 as the high frequency signal transmission wiring of the chip carrier is formed as a coplanar line as indicated by an ellipse on the right side of the figure, and this coplanar line is the second line conductor. 13 and grounding conductors 16 on both sides thereof. Reference numeral 13 'denotes a second line conductor used as a wiring for a signal line such as a power source or an intermediate frequency.
[0042]
In order to mount and mount the high-frequency semiconductor element 12 on such a mounting substrate 8, for example, a conductor bump for flip chip connection is formed on the signal electrode 13 side of the semiconductor element 12, and the conductor bump and the second of the mounting substrate 8. The semiconductor element 12 is mounted on the mounting substrate 8 by joining the leading end portions of the patterns such as the line conductors 13 using ultrasonic waves, solder, or the like.
[0043]
Normally, when connecting high-frequency signal lines, the grounding pads are also connected together for mounting. In this case, since a part of the ground surface on the substrate side on which the semiconductor element is mounted is formed in a portion facing the semiconductor element, a parallel ground surface is formed between the two, Due to this limitation, the overlapping of the ground planes must have a finite value.
[0044]
However, according to the present invention, since the semiconductor element 12 is directly grounded by connecting the ground electrode 14 on the back surface to the grounding protruding terminal 5, the wiring surface of the mounting substrate 8 on which the semiconductor element 12 is mounted and mounted is grounded. For this reason, the ground planes do not overlap and unnecessary radiation due to the parallel plate mode does not occur.
[0045]
FIG. 4 shows a substrate using a coplanar line that can be mounted most easily due to the structure of the present invention. However, when each of the recesses 3 is individually hermetically sealed by the mounting substrate 8. Alternatively, a microstrip line may be provided on the back surface of the mounting substrate 8 and connected using electromagnetic coupling or the like to form a high frequency signal line. Needless to say, a microstrip line may be used as the second line conductor 11.
[0046]
【Example】
Next, specific examples of the package for a high-frequency semiconductor device and the high-frequency semiconductor device of the present invention will be described.
[0047]
As materials for the insulating substrate 2 of the wiring substrate 1 and the insulating substrate 9 of the mounting substrate 8, 92% purity multilayer ceramic alumina was used. Alumina ceramics is formed into a raw sheet of a predetermined thickness, a predetermined conductor pattern is printed on this sheet using tungsten paste, cut into a predetermined shape, and fired in a humidified gas at 1600 ° C for 1 hour. Was done. Thereafter, the surface of the tungsten metallized conductor was plated with nickel at 1 μm and gold at 1.5 μm to obtain the wiring board 1 and the mounting board 8. Then, bumps are formed on the bottom surface of the recess 3 of the wiring board 1 in a grid-like arrangement at intervals of 100 μm using gold wires with a diameter of 20 μm so as to correspond to the ground electrodes 14 of the high-frequency semiconductor element 12. A grounding protruding terminal 5 was obtained.
[0048]
For comparison, a mounting substrate having a structure in which a grounding connection terminal is not formed in the recess of the wiring substrate but a grounding connection pad is provided on the mounting substrate side and grounding is performed from the surface side of the semiconductor element was also manufactured.
[0049]
A dummy chip composed only of a microstrip line is mounted and mounted on these mounting boards instead of the high-frequency semiconductor element, and then the mounting board is mounted on the wiring board so as to be accommodated in the recesses of the wiring board. Implemented. And the permeation | transmission coefficient of the high frequency signal was measured with the network analyzer about one recessed part of a wiring board. The frequency characteristics of the transmission coefficient obtained as a result are shown in FIG.
[0050]
In FIG. 5, the horizontal axis represents the frequency (unit: GHz), the vertical axis represents the transmission coefficient (unit: dB), and the characteristic curve A indicated by the solid line is the characteristic curve B indicated by the dotted line in the embodiment of the present invention. The frequency characteristic of the transmission coefficient of a comparative example is shown.
[0051]
As is clear from this figure, there is a point where the loss increases in the vicinity of 57 GHz and 62 GHz in the comparative example in which the ground pad is provided on the mounting substrate side, but in the example of the present invention, such a point is present. No significant increase in loss was observed at any frequency, and the insertion loss was 2 dB or less up to 60 GHz. As a result, according to the present invention, a microstrip line type high frequency semiconductor element can be simply flip-chip mounted, and a high frequency semiconductor device package and a high frequency semiconductor device with low insertion loss for high frequency signals can be obtained. I was able to confirm.
[0052]
Note that the above are merely examples of the embodiments of the present invention, and the present invention is not limited to these embodiments, and various modifications and improvements may be added without departing from the scope of the present invention. . For example, the material of the insulating substrate of the wiring board and the insulating board of the mounting board is not limited to the alumina ceramics for multilayers, and may be other ceramic materials or resin materials.
[0053]
【The invention's effect】
As described above, according to the package for a high-frequency semiconductor device of the present invention, the high-frequency semiconductor element is mounted on the mounting board by flip-chip mounting, and the opening of the concave portion formed on the upper surface of the wiring board is closed with this mounting board. Thus, the high-frequency semiconductor element is accommodated in the recess, and the signal electrode on the surface of the semiconductor element is electrically connected to the first line conductor of the wiring board via the second line conductor of the mounting board, while the back surface of the semiconductor element Since the ground electrode is made to contact a plurality of ground projecting terminals formed on the bottom surface of the recess and the ground projecting terminals are deformed and electrically connected, the microstrip line type high frequency A semiconductor element and a wiring board as a package body can be electrically connected with a short wiring length, and a parallel ground plane that forms a parallel plate mode is formed between them. It is possible to prevent a high frequency semiconductor device can easily flip-chip mounting, and the insertion loss for high frequency signals can be made to have a low excellent high frequency characteristics.
[0054]
In addition, since the grounding electrode on the back surface is brought into contact with the grounding projecting terminal and the semiconductor element is directly connected to the grounding surface of the package body by connecting the grounding electrode on the back surface to the grounding surface of the package body. At the time of mounting in the concave portion, sufficient grounding can be achieved by sufficient electrical contact with the ground electrode on the back surface of the high-frequency semiconductor element by the grounding protruding terminal.
[0055]
A multichip module can be easily configured by forming a plurality of such recesses in the package body and mounting a plurality of mounting boards on which the high-frequency semiconductor elements are mounted in each recess. Replacement of each element can be easily performed.
[0056]
On the other hand, according to the high frequency semiconductor device of the present invention, since it is configured using the package for a high frequency semiconductor device having the above-described features, the microstrip line type high frequency semiconductor element is similarly simple. In addition, it has an excellent high frequency characteristic that is flip-chip mounted and has a low insertion loss with respect to a high frequency signal. Further, it is easy to replace a high frequency semiconductor element, and various multichip modules can be easily configured.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an example of an embodiment of a package for a high-frequency semiconductor device and a high-frequency semiconductor device using the same according to the present invention.
2 is an essential part enlarged cross-sectional view for explaining a configuration of a mounting portion of a high-frequency semiconductor element in the example of FIG. 1;
FIGS. 3A to 3C are side views or cross-sectional views showing examples of grounding protruding terminals in the present invention. FIGS.
FIG. 4 is a plan view showing an example of a wiring pattern of a mounting board in the present invention.
FIG. 5 is a diagram showing frequency characteristics of a transmission coefficient of a high-frequency signal in an example of the present invention and a comparative example.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Wiring board 2 ... Insulation base | substrate 3 ... Recessed part 4 ... 1st line conductor 5 ... Protruding terminal 8 for grounding ... Mounting board
10 ... Mounting part
11 ... Second line conductor
12 ... High frequency semiconductor devices
13 ... Signal electrode
14 ... Grounding electrode

Claims (2)

A high-frequency semiconductor element having a signal electrode on the front surface and a ground electrode on the back surface;
Wherein a wiring board high frequency semiconductor element is closed on the top surface of the recess to be accommodated, and the first line conductor provided on an opening periphery of the recess, a bottom surface of the recess, wherein the ground electrode is in contact, deforms A plurality of ground protruding terminals that are electrically connected while being packaged, and
A mounting portion for mounting the high-frequency semiconductor element on a lower surface ; an insulating substrate larger than the opening of the recess; and a lower surface of the insulating substrate, with one end on the mounting portion side and the other end on the opposite side. has, in the end the signal electrode, and a mounting substrate having a second line conductors the other end is electrically connected to the first line conductor,
A high-frequency semiconductor device comprising: The high-frequency semiconductor device according to claim 1, wherein the plurality of ground protruding terminals are bump-shaped .

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