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IT1282087B1 - Dispositivo di memoria a semiconduttore e metodo per fabbricare il medesimo - Google Patents

Dispositivo di memoria a semiconduttore e metodo per fabbricare il medesimo

Info

Publication number
IT1282087B1
IT1282087B1 IT96MI000141A ITMI960141A IT1282087B1 IT 1282087 B1 IT1282087 B1 IT 1282087B1 IT 96MI000141 A IT96MI000141 A IT 96MI000141A IT MI960141 A ITMI960141 A IT MI960141A IT 1282087 B1 IT1282087 B1 IT 1282087B1
Authority
IT
Italy
Prior art keywords
manufacturing
same
memory device
semiconductor memory
semiconductor
Prior art date
Application number
IT96MI000141A
Other languages
English (en)
Inventor
Ema Taiji
Anezaki Tohru
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of ITMI960141A0 publication Critical patent/ITMI960141A0/it
Publication of ITMI960141A1 publication Critical patent/ITMI960141A1/it
Application granted granted Critical
Publication of IT1282087B1 publication Critical patent/IT1282087B1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT96MI000141A 1995-01-31 1996-01-26 Dispositivo di memoria a semiconduttore e metodo per fabbricare il medesimo IT1282087B1 (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1374895 1995-01-31
JP31073795A JP3623834B2 (ja) 1995-01-31 1995-11-29 半導体記憶装置及びその製造方法

Publications (3)

Publication Number Publication Date
ITMI960141A0 ITMI960141A0 (it) 1996-01-26
ITMI960141A1 ITMI960141A1 (it) 1997-07-26
IT1282087B1 true IT1282087B1 (it) 1998-03-12

Family

ID=26349588

Family Applications (1)

Application Number Title Priority Date Filing Date
IT96MI000141A IT1282087B1 (it) 1995-01-31 1996-01-26 Dispositivo di memoria a semiconduttore e metodo per fabbricare il medesimo

Country Status (4)

Country Link
US (2) US5874756A (it)
JP (1) JP3623834B2 (it)
KR (2) KR100254965B1 (it)
IT (1) IT1282087B1 (it)

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KR100285698B1 (ko) * 1998-07-13 2001-04-02 윤종용 반도체장치의제조방법
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US6458649B1 (en) * 1999-07-22 2002-10-01 Micron Technology, Inc. Methods of forming capacitor-over-bit line memory cells
US6589876B1 (en) * 1999-07-22 2003-07-08 Micron Technology, Inc. Methods of forming conductive capacitor plugs, methods of forming capacitor contact openings, and methods of forming memory arrays
US6159818A (en) * 1999-09-02 2000-12-12 Micron Technology, Inc. Method of forming a container capacitor structure
FR2800199B1 (fr) * 1999-10-21 2002-03-01 St Microelectronics Sa Fabrication de memoire dram
KR100317331B1 (ko) * 1999-11-11 2001-12-24 박종섭 불휘발성 강유전체 메모리 소자 및 그 제조방법
US6563156B2 (en) 2001-03-15 2003-05-13 Micron Technology, Inc. Memory elements and methods for making same
US6498088B1 (en) 2000-11-09 2002-12-24 Micron Technology, Inc. Stacked local interconnect structure and method of fabricating same
US6642584B2 (en) * 2001-01-30 2003-11-04 International Business Machines Corporation Dual work function semiconductor structure with borderless contact and method of fabricating the same
JP3989697B2 (ja) * 2001-05-30 2007-10-10 富士通株式会社 半導体装置及び半導体装置の位置検出方法
FR2828763B1 (fr) * 2001-08-16 2004-01-16 St Microelectronics Sa Circuit integre, notamment cellule memoire dram avec contact a faible facteur de forme et procede de fabrication
FR2828766B1 (fr) * 2001-08-16 2004-01-16 St Microelectronics Sa Circuit integre comprenant des elements actifs et au moins un element passif, notamment des cellules memoire dram et procede de fabrication
FR2828764B1 (fr) * 2001-08-16 2004-01-23 St Microelectronics Sa Circuit integre et son procede de fabrication, et cellule de memoire incorporant un tel circuit
JP2003163283A (ja) * 2001-11-27 2003-06-06 Mitsubishi Electric Corp 半導体装置の製造方法および半導体装置
FR2832854B1 (fr) * 2001-11-28 2004-03-12 St Microelectronics Sa Fabrication de memoire dram et de transistor mos
US7317208B2 (en) * 2002-03-07 2008-01-08 Samsung Electronics Co., Ltd. Semiconductor device with contact structure and manufacturing method thereof
US7125781B2 (en) * 2003-09-04 2006-10-24 Micron Technology, Inc. Methods of forming capacitor devices
JP4908748B2 (ja) * 2003-09-22 2012-04-04 三星電子株式会社 半導体素子を製造するためのエッチング方法
US7005379B2 (en) * 2004-04-08 2006-02-28 Micron Technology, Inc. Semiconductor processing methods for forming electrical contacts
US7439152B2 (en) 2004-08-27 2008-10-21 Micron Technology, Inc. Methods of forming a plurality of capacitors
JP4074292B2 (ja) * 2005-01-17 2008-04-09 株式会社東芝 半導体装置及びその製造方法
US7768014B2 (en) * 2005-01-31 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method thereof
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KR100724568B1 (ko) * 2005-10-12 2007-06-04 삼성전자주식회사 반도체 메모리 소자 및 그 제조방법
JP2006191137A (ja) * 2006-02-23 2006-07-20 Renesas Technology Corp 半導体集積回路装置の製造方法
US7557013B2 (en) 2006-04-10 2009-07-07 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
JP4533919B2 (ja) * 2007-09-18 2010-09-01 株式会社東芝 不揮発性半導体メモリの製造方法
JP2008034866A (ja) * 2007-09-18 2008-02-14 Toshiba Corp 半導体装置
KR20120019262A (ko) * 2010-08-25 2012-03-06 삼성전자주식회사 반도체 소자 및 이를 제조하는 방법
KR101153815B1 (ko) * 2010-11-16 2012-06-14 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
JP2011049601A (ja) * 2010-12-03 2011-03-10 Renesas Electronics Corp 半導体装置
JP5991729B2 (ja) 2011-10-07 2016-09-14 キヤノン株式会社 固体撮像装置の製造方法
US9076680B2 (en) 2011-10-18 2015-07-07 Micron Technology, Inc. Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array
US8946043B2 (en) 2011-12-21 2015-02-03 Micron Technology, Inc. Methods of forming capacitors
KR101709810B1 (ko) * 2012-06-14 2017-03-08 삼성전기주식회사 고주파 인덕터의 제조방법
KR102437295B1 (ko) * 2015-11-09 2022-08-30 삼성전자주식회사 반도체 소자의 제조 방법
US10930516B2 (en) * 2016-06-15 2021-02-23 Sony Corporation Semiconductor device and semiconductor device manufacturing method
US20230413514A1 (en) * 2022-06-19 2023-12-21 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit and manufacturing method thereof

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JPH0673368B2 (ja) * 1985-01-31 1994-09-14 富士通株式会社 半導体記憶装置およびその製造方法
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JP2932540B2 (ja) * 1989-11-28 1999-08-09 ソニー株式会社 半導体メモリ装置
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US5110754A (en) * 1991-10-04 1992-05-05 Micron Technology, Inc. Method of making a DRAM capacitor for use as an programmable antifuse for redundancy repair/options on a DRAM
KR940006682B1 (ko) * 1991-10-17 1994-07-25 삼성전자 주식회사 반도체 메모리장치의 제조방법
US5150276A (en) * 1992-01-24 1992-09-22 Micron Technology, Inc. Method of fabricating a vertical parallel cell capacitor having a storage node capacitor plate comprising a center fin effecting electrical communication between itself and parallel annular rings
US5292677A (en) * 1992-09-18 1994-03-08 Micron Technology, Inc. Reduced mask CMOS process for fabricating stacked capacitor multi-megabit dynamic random access memories utilizing single etch stop layer for contacts
US5605857A (en) * 1993-02-12 1997-02-25 Micron Technology, Inc. Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells

Also Published As

Publication number Publication date
US6395599B1 (en) 2002-05-28
ITMI960141A0 (it) 1996-01-26
JP3623834B2 (ja) 2005-02-23
KR960030423A (ko) 1996-08-17
KR100254965B1 (ko) 2000-05-01
ITMI960141A1 (it) 1997-07-26
US5874756A (en) 1999-02-23
JPH08274278A (ja) 1996-10-18
KR100354296B1 (ko) 2002-09-28

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