IT1167386B - SEMICONDUCTOR DYNAMIC RANDOM ACCESS MEMORY - Google Patents

SEMICONDUCTOR DYNAMIC RANDOM ACCESS MEMORY

Info

Publication number: IT1167386B
Authority: IT; Italy
Prior art keywords: random access; access memory; dynamic random; semiconductor dynamic; semiconductor
Prior art date: 1982-09-10

Application number

IT22792/83A

Other languages

Italian (it)

Other versions

IT8322792A1 (en

IT8322792A0 (en

Inventor

Yamaguchi Yasunori

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1982-09-10

Filing date

1983-09-06

Publication date

1987-05-13

1983-09-06 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1983-09-06 Publication of IT8322792A0 publication Critical patent/IT8322792A0/en

1985-03-06 Publication of IT8322792A1 publication Critical patent/IT8322792A1/en

1987-05-13 Application granted granted Critical

1987-05-13 Publication of IT1167386B publication Critical patent/IT1167386B/en

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Dram (AREA)
Semiconductor Memories (AREA)
Static Random-Access Memory (AREA)

IT22792/83A 1982-09-10 1983-09-06 SEMICONDUCTOR DYNAMIC RANDOM ACCESS MEMORY IT1167386B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP57156662A JPS5948889A (en)	1982-09-10	1982-09-10	Mos storage device

Publications (3)

Publication Number	Publication Date
IT8322792A0 IT8322792A0 (en)	1983-09-06
IT8322792A1 IT8322792A1 (en)	1985-03-06
IT1167386B true IT1167386B (en)	1987-05-13

Family

ID=15632554

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT22792/83A IT1167386B (en)	1982-09-10	1983-09-06	SEMICONDUCTOR DYNAMIC RANDOM ACCESS MEMORY

Country Status (6)

Country	Link
JP (1)	JPS5948889A (en)
KR (1)	KR840005884A (en)
DE (1)	DE3332481A1 (en)
FR (1)	FR2533061A1 (en)
GB (1)	GB2127246B (en)
IT (1)	IT1167386B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS61104395A (en) *	1984-10-22	1986-05-22	Nec Ic Microcomput Syst Ltd	Dynamic type semiconductor storage device
JPS6364695A (en) *	1986-09-04	1988-03-23	Fujitsu Ltd	Semiconductor integrated circuit
JPH07118193B2 (en) *	1986-09-18	1995-12-18	富士通株式会社	Semiconductor memory device
JPH07107797B2 (en) *	1987-02-10	1995-11-15	三菱電機株式会社	Dynamic random access memory
KR910009551B1 (en) *	1988-06-07	1991-11-21	삼성전자 주식회사	Sense Amplifier Division Control Circuit of Memory Device
JP2878713B2 (en) *	1989-06-13	1999-04-05	株式会社東芝	Semiconductor storage device
KR940007639B1 (en) *	1991-07-23	1994-08-22	삼성전자 주식회사	Data transmitting circuit having divided input/output line
KR0179097B1 (en) *	1995-04-07	1999-04-15	김주용	Data read and write method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4061999A (en) *	1975-12-29	1977-12-06	Mostek Corporation	Dynamic random access memory system
DE2743662A1 (en) *	1977-09-28	1979-04-05	Siemens Ag	A TRANSISTOR MEMORY ELEMENT AND METHOD FOR ITS MANUFACTURING
US4241425A (en) *	1979-02-09	1980-12-23	Bell Telephone Laboratories, Incorporated	Organization for dynamic random access memory
JPS5616992A (en) *	1979-07-20	1981-02-18	Hitachi Ltd	Signal readout circuit
JPS6027119B2 (en) *	1980-04-22	1985-06-27	株式会社東芝	semiconductor memory
US4556961A (en) *	1981-05-26	1985-12-03	Tokyo Shibaura Denki Kabushiki Kaisha	Semiconductor memory with delay means to reduce peak currents

1982
- 1982-09-10 JP JP57156662A patent/JPS5948889A/en active Pending
1983
- 1983-05-31 FR FR8308994A patent/FR2533061A1/en active Pending
- 1983-06-24 KR KR1019830002856A patent/KR840005884A/en not_active Application Discontinuation
- 1983-06-30 GB GB08317749A patent/GB2127246B/en not_active Expired
- 1983-09-06 IT IT22792/83A patent/IT1167386B/en active
- 1983-09-08 DE DE19833332481 patent/DE3332481A1/en not_active Withdrawn

Also Published As

Publication number	Publication date
GB8317749D0 (en)	1983-08-03
IT8322792A1 (en)	1985-03-06
GB2127246B (en)	1985-12-11
KR840005884A (en)	1984-11-19
JPS5948889A (en)	1984-03-21
IT8322792A0 (en)	1983-09-06
FR2533061A1 (en)	1984-03-16
GB2127246A (en)	1984-04-04
DE3332481A1 (en)	1984-03-15

Publication	Publication Date	Title
IT1160500B (en)	1987-03-11	MOSDYNAMIC RANDOM ACCESS MEMORY
EP0473201A3 (en)	1992-03-25	Dynamic semiconductor random access memory
GB2093236B (en)	1984-12-12	Semiconductor random access memory arrangements
IT1168296B (en)	1987-05-20	SEMICONDUCTOR MEMORY DEVICE AND IN PARTICULAR DYNAMIC MEMORY WITH RANDOM ACCESS
IT1161895B (en)	1987-03-18	SEMICONDUCTOR MEMORY
DE3379854D1 (en)	1989-06-15	Semiconductor dynamic memory device
KR900012276A (en)	1990-08-03	Dynamic type semiconductor memory device
DE69120448D1 (en)	1996-08-01	Dynamic type semiconductor memory devices
IT8067197A0 (en)	1980-02-08	RANDOM ACCESS DYNAMIC MEMORY DEVICE
IT1151245B (en)	1986-12-17	SEMICONDUCTOR MEMORY DEVICE IN PARTICULAR DYNAMIC RANDOM ACCESS
DE3071677D1 (en)	1986-09-04	Semiconductor circuit for a dynamic random access memory
DE3379128D1 (en)	1989-03-09	Dynamic type semiconductor memory device
DE69120447D1 (en)	1996-08-01	Dynamic type semiconductor memory device
DE69025284D1 (en)	1996-03-21	Semiconductor memory dynamic type
DE3174796D1 (en)	1986-07-17	Dynamic semiconductor memory
DE3484142D1 (en)	1991-04-04	DYNAMIC SEMICONDUCTOR MEMORY ARRANGEMENT.
DE3379520D1 (en)	1989-05-03	A dynamic semiconductor memory device
DE3380542D1 (en)	1989-10-12	Dynamic semiconductor memory device
IT8322980A0 (en)	1983-09-23	DYNAMIC MEMORY CELL SEMICONDUCTOR MEMORY.
IT1167386B (en)	1987-05-13	SEMICONDUCTOR DYNAMIC RANDOM ACCESS MEMORY
IT1168282B (en)	1987-05-20	MOS TYPE RANDOM ACCESS MEMORY
DE3380133D1 (en)	1989-08-03	A dynamic semiconductor memory device
IT8420144A0 (en)	1984-03-20	DYNAMIC RANDOM ACCESS SEMICONDUCTOR MEMORY DEVICE.
DE3482806D1 (en)	1990-08-30	DYNAMIC RANDOM MEMORY.
IT1209595B (en)	1989-08-30	SEMICONDUCTOR MEMORY DEVICE, IN PARTICULAR DYNAMIC RANDOM ACCESS.