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IT8420144A0 - DYNAMIC RANDOM ACCESS SEMICONDUCTOR MEMORY DEVICE. - Google Patents

DYNAMIC RANDOM ACCESS SEMICONDUCTOR MEMORY DEVICE.

Info

Publication number
IT8420144A0
IT8420144A0 IT8420144A IT2014484A IT8420144A0 IT 8420144 A0 IT8420144 A0 IT 8420144A0 IT 8420144 A IT8420144 A IT 8420144A IT 2014484 A IT2014484 A IT 2014484A IT 8420144 A0 IT8420144 A0 IT 8420144A0
Authority
IT
Italy
Prior art keywords
memory device
random access
semiconductor memory
dynamic random
access semiconductor
Prior art date
Application number
IT8420144A
Other languages
Italian (it)
Other versions
IT1173897B (en
Inventor
Jun Kitano
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8420144A0 publication Critical patent/IT8420144A0/en
Application granted granted Critical
Publication of IT1173897B publication Critical patent/IT1173897B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
IT20144/84A 1983-03-23 1984-03-20 DYNAMIC RANDOM SEMICONDUCTOR MEMORY DEVICE IT1173897B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58047149A JPS59172761A (en) 1983-03-23 1983-03-23 Semiconductor device

Publications (2)

Publication Number Publication Date
IT8420144A0 true IT8420144A0 (en) 1984-03-20
IT1173897B IT1173897B (en) 1987-06-24

Family

ID=12767038

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20144/84A IT1173897B (en) 1983-03-23 1984-03-20 DYNAMIC RANDOM SEMICONDUCTOR MEMORY DEVICE

Country Status (6)

Country Link
JP (1) JPS59172761A (en)
KR (1) KR840008196A (en)
DE (1) DE3410794A1 (en)
FR (1) FR2543348A1 (en)
GB (1) GB2137018A (en)
IT (1) IT1173897B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0760858B2 (en) * 1984-10-26 1995-06-28 三菱電機株式会社 Semiconductor memory device
EP0464251B1 (en) * 1990-07-06 1996-03-13 Fujitsu Limited Dynamic random access memory having improved layout and method of arranging memory cell pattern
JP3171240B2 (en) * 1998-01-13 2001-05-28 日本電気株式会社 Resistance element, semiconductor device using the same, and method of manufacturing these

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE789501A (en) * 1971-09-30 1973-03-29 Siemens Ag ELECTRIC CAPACITOR IN AN INTEGRATED CIRCUIT, USED IN PARTICULAR AS MEMORY FOR A SEMICONDUCTOR MEMORY
US4140967A (en) * 1977-06-24 1979-02-20 International Business Machines Corporation Merged array PLA device, circuit, fabrication method and testing technique
JPS5457921A (en) * 1977-10-18 1979-05-10 Fujitsu Ltd Sense amplifier circuit
JPS5559759A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Semiconductor device
DE3029108A1 (en) * 1980-07-31 1982-02-18 Siemens AG, 1000 Berlin und 8000 München MONOLITHICALLY INTEGRATED SEMICONDUCTOR MEMORY
JPS57186354A (en) * 1981-05-13 1982-11-16 Hitachi Ltd Semiconductor memory storage and manufacture thereof
US4413330A (en) * 1981-06-30 1983-11-01 International Business Machines Corporation Apparatus for the reduction of the short-channel effect in a single-polysilicon, one-device FET dynamic RAM array
DE3137708A1 (en) * 1981-09-22 1983-04-07 Siemens AG, 1000 Berlin und 8000 München INTEGRATOR CIRCUIT WITH A DIFFERENTIAL AMPLIFIER
FR2519461A1 (en) * 1982-01-06 1983-07-08 Hitachi Ltd SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE

Also Published As

Publication number Publication date
JPS59172761A (en) 1984-09-29
KR840008196A (en) 1984-12-13
GB8404743D0 (en) 1984-03-28
FR2543348A1 (en) 1984-09-28
DE3410794A1 (en) 1984-09-27
GB2137018A (en) 1984-09-26
IT1173897B (en) 1987-06-24

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