HK1096194A1 - Electronic assembly wire and flat cable comprising same - Google Patents
Electronic assembly wire and flat cable comprising same Download PDFInfo
- Publication number
- HK1096194A1 HK1096194A1 HK07103072.8A HK07103072A HK1096194A1 HK 1096194 A1 HK1096194 A1 HK 1096194A1 HK 07103072 A HK07103072 A HK 07103072A HK 1096194 A1 HK1096194 A1 HK 1096194A1
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- plating layer
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- alloy plating
- flat cable
- layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/4557—Plural coating layers
- H01L2224/45572—Two-layer stack coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Non-Insulated Conductors (AREA)
- Insulated Conductors (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses a conductor of electronic part, which comprises the following parts: conductive base (1), Sn alloy coating layer (2) with Sn and Bi, Cu, Ag or Sn and Zn on the positive layer of conductive base (1), upper coating layer (3) with Zn coating layer, Ag coating layer, SnZn alloy coating layer, SnAg alloy coating layer or SnBi alloy coating layer on the surface of Sn alloy coating layer (2), wherein the density of Bi, Cu, Ag or Zn is 0.1-15%; the total thickness of Sn alloy coating layer (2) and upper coating layer (3) is 0.5-20 mum.
Description
Technical Field
The present invention relates to a lead wire for an electronic component and a flat cable using the same. More specifically, the present invention relates to a lead wire for electronic components and a flat cable which do not use toxic lead and have an effect of preventing short-circuit factors.
Background
Sn (tin) plating is widely used for weak electric industrial parts, electronic industrial parts, and the like as a protective film for improving solderability or a protective film for an etching resist.
It is known that whiskers (whisker) occur in Sn (tin) plating, and for example, in a flexible flat cable having a very small interval between flat cables, the whiskers may cause short-circuiting.
As measures for preventing this short circuit, there are a method of performing heat treatment such as annealing treatment and a method of replacing Sn plating with another plating protective film such as gold plating or SnPb alloy plating.
However, the occurrence of whiskers cannot be sufficiently prevented by merely performing the heat treatment of the prior art. Further, although gold plating and the like do not generate whiskers, the cost is too high, and SnPb alloy plating is not preferable from the viewpoint of environmental protection because lead is used. Therefore, in recent years, attention has been paid to SnBi (bismuth) alloy plating (see, for example, patent document 1), but it is still insufficient in preventing the generation of whiskers.
Patent document 1: japanese laid-open patent publication No. 2002-30468
Disclosure of Invention
The present invention has been made in view of the above problems, and an object thereof is to provide a low-cost lead wire for electronic components, which has a plating layer mainly composed of tin, is completely free of lead, and can reliably prevent the occurrence of whiskers, and a flat cable including the lead wire.
In order to solve the above problems, the lead for electronic parts according to the present invention is formed by forming an Sn alloy plating layer containing 0.1 to 15 wt% of at least one element selected from Bi, Cu (copper), Ag (silver), and Zn (zinc) on a conductive substrate, and forming a Zn plating layer, an Ag plating layer, an SnZn alloy plating layer, an SnAg alloy plating layer, or an SnBi alloy plating layer thereon. Here, the electronic component wire is preferably further subjected to a heat treatment such as reflow treatment to form an alloy layer in which tin is diffused.
Further, the total thickness of the Sn alloy plating layer and the Zn plating layer, Ag plating layer, SnZn alloy plating layer, SnAg alloy plating layer, or SnBi alloy plating layer formed thereon is preferably 0.5 to 20 μm.
The present invention also provides a flat cable produced by using these electronic component wires. Here, after rolling into a flat cable, the total thickness of the Sn alloy plating layer and the Zn plating layer, Ag plating layer, SnZn alloy plating layer, SnAg alloy plating layer, or SnBi alloy plating layer thereon is preferably 0.1 to 3 μm, and the flat cable is preferably subjected to a heat treatment such as an annealing treatment.
The lead wire and the flat cable using the same according to the present invention are lead-free and environmentally friendly, and have an effect of suppressing whiskers, since the Sn alloy plating layer containing 0.1 to 15 wt% of at least one element selected from Bi, Cu (copper), Ag (silver), and Zn (zinc) is formed on the conductive substrate, and further, the Zn plating layer, Ag plating layer, SnZn alloy plating layer, SnAg alloy plating layer, or SnBi alloy plating layer is formed thereon, so that the generation of whiskers can be more reliably prevented.
Further, since the tin is diffused into the Zn plating layer, Ag plating layer, SnZn alloy plating layer, SnAg alloy plating layer, or SnBi alloy plating layer as the upper layer by performing heat treatment such as reflow treatment and annealing treatment to form an alloy layer, the electrical characteristics thereof can be maintained.
Further, the total thickness of the Sn alloy plating layer and the Zn plating layer and Ag plating layer on the upper layer of the Sn alloy plating layer on the lead is 0.5 to 20 μm, and the total thickness of the Sn alloy plating layer and the Zn plating layer, Ag plating layer, SnZn alloy plating layer, SnAg alloy plating layer or SnBi alloy plating layer on the upper layer of the Sn alloy plating layer after rolling into the flat cable is 0.1 to 3 μm, so that the generation of whiskers can be reliably prevented while maintaining the same electrical characteristics.
Drawings
Fig. 1(a) is a sectional view of a lead of a first embodiment, and (b) is a sectional view of a lead of a second embodiment.
Fig. 2(a) is a sectional view of the flat cable of the third embodiment, and (b) is a sectional view of the flat cable of the fourth embodiment.
Description of the symbols:
A. b-conductor
C. D-flat cable
1-conductive base
2-Sn alloy plating (bottom plating)
3-upper layer coating
4-alloy layer
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
Fig. 1 is a sectional configuration view showing a lead wire, and fig. 2 is a sectional configuration view showing a flat cable. Fig. 1(a) is a sectional view of a lead of a first embodiment, and (b) is a sectional view of a lead of a second embodiment. Fig. 2(a) is a sectional view of the flat cable of the third embodiment, and (b) is a sectional view of the flat cable of the fourth embodiment. In the drawing, reference numeral 1 denotes a conductive base, 2 denotes an Sn alloy plating layer (under plating layer), 3 denotes an upper plating layer, and 4 denotes an alloy layer.
As shown in fig. 1 a, the lead a of the first embodiment is composed of a conductive base 1, a Sn alloy plating layer (undercoat plating layer) 2 of Sn and Bi, Cu, Ag, or Sn and Zn formed thereon, and an upper plating layer 3 of Zn plating layer, Ag plating layer, SnZn alloy plating layer, SnAg alloy plating layer, or SnBi alloy plating layer formed thereon.
As the conductive base 1, a copper wire, a copper alloy wire such as brass or phosphor bronze, or a wire in which the surface of an iron wire such as a CP wire is covered with copper or a copper alloy may be used.
When the Sn alloy plating layer 2 contains a plurality of Bi, Cu, Ag or Zn, the average concentration thereof is set to 0.1 to 15 wt%, and the total thickness of the Sn alloy plating layer 2 and the upper plating layer 3 formed thereon is set to 0.5 to 20 μm.
Although the inclusion of at least one of Bi, Cu, Ag, and Zn in Sn can prevent the occurrence of whiskers to some extent, when the content is less than 0.1 wt%, the effect of preventing the occurrence of whiskers cannot be sufficiently obtained, whereas when the content is more than 15 wt%, the hardness of the Sn alloy plating layer 2 increases, and defects such as cracking and breaking are likely to occur, and the cost also increases.
The present invention can more reliably prevent the generation of whiskers without losing the electrical characteristics thereof by further forming the upper plating layer 3 composed of a Zn plating layer, an Ag plating layer, an SnZn alloy plating layer, an SnAg alloy plating layer, or an SnBi alloy plating layer on the Sn alloy plating layer 2. However, since the electrical characteristics are deteriorated when the upper plating layer is excessively thick, it is preferably 2 μm or less, and more preferably 0.5 μm or less. For example, in the layer on which the plating layer 2 is made of a ZnSn alloy and the Zn plating layer is applied, the Zn concentration in the entire of the Sn alloy plating layer 2 and the upper plating layer 3 is contained, and of course, may exceed 15 wt%. This point is also the same in other embodiments below.
Next, the lead wire B according to the second embodiment is a lead wire in which the Sn alloy plating layer 2 of the first embodiment and the upper plating layer 3 of the upper layer thereof, such as a Zn plating layer, an Ag plating layer, an SnZn alloy plating layer, an SnAg alloy plating layer, or an SnBi alloy plating layer, are changed into a tin-diffused alloy layer 4 by applying a heat treatment such as reflow treatment.
Next, the flat cable C in the third embodiment is a cable produced by an extension calender using the lead wire a, and the flat cable D in the fourth embodiment is a cable produced by an extension calender using the lead wire B.
The total thickness of the Sn alloy plating layer 2 and the upper plating layer 3 after rolling into a flat cable is preferably 0.1 to 3 μm, and more preferably 0.3 to 0.7 μm.
The flat cable D according to the fourth embodiment is produced by subjecting the flat cable C to heat treatment such as electric annealing.
(example 1)
After a copper wire (conductive substrate) having a diameter of 0.6mm is subjected to pretreatment such as electrolytic degreasing and acid washing, Sn-Bi alloy plating is performed using a plating chemical produced by Shiyakong chemical company (Japanese name: Shiyakong) to form an Sn alloy plating layer (primer plating layer).
Then, Zn plating is performed to form an upper plating layer, thereby forming a lead wire having a plating layer of a two-layer structure. Further, an elongation calender manufactured by SAIKAWA corporation (Japanese name: サイカワ) performs elongation, calendering, and electric annealing to prepare a flat cable.
(example 2)
After a copper wire (conductive substrate) having a diameter of 0.6mm was subjected to pretreatment such as electrolytic degreasing and pickling, Sn-Zn alloy Plating was performed using a Plating chemical manufactured by Nissan Metal Plating Co., Ltd. (Japanese name: Nissan メタルプレ - ティング) to form an Sn alloy Plating layer (undercoat Plating layer).
Then, Zn plating is performed to form an upper plating layer, thereby forming a lead wire having a plating layer of a two-layer structure. Then, the flat cable is produced by drawing, rolling and electric annealing treatment by the drawing and rolling machine.
(example 3)
After a copper wire (conductive substrate) having a diameter of 0.6mm was subjected to pretreatment such as electrolytic degreasing and acid pickling, Sn-Cu alloy plating was performed using a plating solution manufactured by Korea industries, Japan, Ltd. (Korea, Japan: Korea, ), to form an Sn alloy plating layer (undercoat plating layer).
Then, Zn plating is performed to form an upper plating layer, thereby forming a lead wire having a plating layer of a two-layer structure. Then, the flat cable is produced by drawing, rolling and electric annealing treatment by the drawing and rolling machine.
(example 4)
After a copper wire (conductive substrate) having a diameter of 0.6mm is subjected to pretreatment such as electrolytic degreasing and pickling, Sn — Ag alloy plating is performed using a plating chemical produced by shiyasu chemicals, to form an Sn alloy plating layer (undercoat plating layer).
Then, Zn plating is performed to form an upper plating layer, thereby forming a lead wire having a plating layer of a two-layer structure. Then, the flat cable is produced by drawing, rolling and electric annealing treatment by the drawing and rolling machine.
(example 5)
After a copper wire (conductive substrate) having a diameter of 0.6mm is subjected to pretreatment such as electrolytic degreasing and pickling, Sn — Bi alloy plating is performed using a plating chemical produced by shiyasu chemicals, to form an Sn alloy plating layer (undercoat plating layer).
Next, Ag plating was performed using a plating solution manufactured by Meltex corporation (Japanese name: メルテックス) to form an upper plating layer, thereby forming a lead wire having a two-layer structure plating layer. Then, the flat cable is produced by drawing, rolling and electric annealing treatment by the drawing and rolling machine.
(example 6)
After a copper wire (conductive substrate) having a diameter of 0.6mm is subjected to pretreatment such as electrolytic degreasing and pickling, Sn — Bi alloy plating is performed using a plating chemical produced by shiyasu chemicals to form an Sn alloy layer (undercoat layer).
Next, an Sn-Zn alloy Plating layer was formed using a Plating solution manufactured by Nissan Metal Plating, thereby forming a lead wire having a Plating layer of a two-layer structure. Then, the flat cable is produced by drawing, rolling and electric annealing treatment by the drawing and rolling machine.
(example 7)
After a copper wire (conductive substrate) having a diameter of 0.6mm is subjected to pretreatment such as electrolytic degreasing and acid pickling, an Sn — Zn alloy Plating is performed using a Plating solution manufactured by Metal Plating, ltd, to form an Sn alloy layer (undercoat Plating layer).
Then, an Sn-Zn Plating layer having a higher Zn concentration (%) than that of the under-Plating layer was formed using a Plating solution manufactured by Nissan Metal Plating, thereby forming a lead wire having a Plating layer of a two-layer structure. Then, the flat cable is produced by drawing, rolling and electric annealing treatment by the drawing and rolling machine.
(example 8)
After a copper wire (conductive substrate) having a diameter of 0.6mm is subjected to pretreatment such as electrolytic degreasing and acid pickling, an Sn — Zn alloy Plating is performed using a Plating solution manufactured by Metal Plating, ltd, to form an Sn alloy layer (undercoat Plating layer).
Then, a Sn-Bi alloy plating layer was formed using a plating solution produced by Shigaku chemical Co., Ltd to construct a lead having a plating layer of a two-layer structure. Then, the flat cable is produced by drawing, rolling and electric annealing treatment by the drawing and rolling machine.
Comparative examples 1 to 3
After a copper wire (conductive base) having a diameter of 0.6mm was subjected to pretreatment such as electrolytic degreasing and acid washing, Sn plating was performed using a plating chemical produced by shiyasu chemicals, to form a lead wire having an Sn plating layer. Then, the flat cable is produced by drawing, rolling and electric annealing treatment by the drawing and rolling machine.
Comparative example 4
After a copper wire (conductive base) having a diameter of 0.6mm was subjected to pretreatment such as electrolytic degreasing and pickling, Sn — Bi alloy plating was performed using a plating chemical produced by shiyasu chemicals, in the same manner as in example 1, to form a lead having the alloy plating layer. Then, the flat cable is produced by drawing, rolling and electric annealing treatment by the drawing and rolling machine.
Comparative example 5
After a copper wire (conductive base) having a diameter of 0.6mm was subjected to pretreatment such as electrolytic degreasing and pickling, Sn — Zn alloy Plating was performed using a Plating chemical manufactured by Nissan Metal Plating, in the same manner as in example 2, to form a lead wire having the alloy Plating layer. Then, the flat cable is produced by drawing, rolling and electric annealing treatment by the drawing and rolling machine.
In order to evaluate each of the flat cables of examples 1 to 8 and comparative examples 1 to 5, the flat cables were subjected to a lamination (plating) process, fitted with a reflow Sn-plated connector, left at room temperature for 1000 hours, and then the occurrence of whiskers was confirmed and evaluated by a scanning electron microscope produced by hitachi.
The evaluation results of the examples and comparative examples are shown in table 1 below.
The thickness of the lower plating layer, the thickness of the upper plating layer, and the total thickness in table 1 are thicknesses in the conductor before rolling into a flat cable, the maximum length (μm) in whisker evaluation is the length of the longest whisker among the generated whiskers, and the occurrence rate (%) is (number of whisker-generated conductors)/(total number of evaluation conductors).
TABLE 1
The following results were obtained from table 1.
(1) In any of examples 1 to 8, the maximum length of the whiskers was 20 μm or less, and the whisker occurrence rate was 10% or less. From this, it is understood that the generation of whiskers can be reliably prevented even in comparison with comparative examples 4 and 5.
(2) As is clear from comparative examples 1 to 5, the maximum length of any one whisker was 50 μm or more, and the whisker occurrence rate was 20% or more. Although it was confirmed that the Sn-Bi alloy plating layer and the Sn-Zn alloy plating layer have the effect of preventing the generation of whiskers in comparative examples 1 to 3 as compared with comparative examples 4 and 5, the effect was greatly different from that in examples 1 to 8, and it was found that the effects in comparative examples 4 and 5 were insufficient.
Claims (6)
1. A lead for electronic components, characterized in that:
forming a Sn alloy plating layer containing 0.1 to 15 wt% of at least one element of Bi, Ag and Zn on a conductive substrate, forming a Zn plating layer, a SnZn alloy plating layer or a SnBi alloy plating layer thereon,
the combination of the Sn alloy plating layer and the plating layer on the upper layer is selected from
A combination of the SnBi alloy plating layer and the Zn plating layer,
A combination of the SnZn alloy coating and the Zn coating,
A combination of SnAg alloy coating and Zn coating,
A combination of the SnBi alloy coating and the SnZn alloy coating,
Combination of SnZn alloy coating and SnZn alloy coating, and
any one of combinations of the SnZn alloy plating layer and the SnBi alloy plating layer.
2. The lead for electronic components according to claim 1, wherein:
the lead for electronic parts is subjected to a heat treatment of reflow treatment.
3. The lead for electronic components according to claim 1 or 2, characterized in that:
the total thickness of the Sn alloy plating layer and the Zn plating layer, the SnZn alloy plating layer or the SnBi alloy plating layer on the Sn alloy plating layer is 0.5-20 mu m.
4. A flat cable produced by using the conductive wire for electronic components according to any one of claims 1 to 3.
5. The flat cable according to claim 4, wherein:
after rolling into a flat cable, the total thickness of the Sn alloy plating layer and the Zn plating layer, the SnZn alloy plating layer or the SnBi alloy plating layer on the upper layer is 0.1-3 μm.
6. A flat cable obtained by subjecting the flat cable according to claim 4 or 5 to a heat treatment such as annealing treatment.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005110003 | 2005-04-06 | ||
| JP2005-110003 | 2005-04-06 | ||
| JP2005207607 | 2005-07-15 | ||
| JP2005-207607 | 2005-07-15 | ||
| JP2006076122A JP2007046150A (en) | 2005-04-06 | 2006-03-20 | Lead wire for electronic parts and flat cable comprising the lead wire |
| JP2006-076122 | 2006-03-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| HK1096194A1 true HK1096194A1 (en) | 2007-05-25 |
| HK1096194B HK1096194B (en) | 2010-10-29 |
Family
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Also Published As
| Publication number | Publication date |
|---|---|
| CN1848305A (en) | 2006-10-18 |
| JP2007046150A (en) | 2007-02-22 |
| CN1848305B (en) | 2010-08-18 |
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