CN1848305B - Electronic assembly wire and flat cable comprising same - Google Patents
Electronic assembly wire and flat cable comprising same Download PDFInfo
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- CN1848305B CN1848305B CN2006100727098A CN200610072709A CN1848305B CN 1848305 B CN1848305 B CN 1848305B CN 2006100727098 A CN2006100727098 A CN 2006100727098A CN 200610072709 A CN200610072709 A CN 200610072709A CN 1848305 B CN1848305 B CN 1848305B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/4557—Plural coating layers
- H01L2224/45572—Two-layer stack coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- Insulated Conductors (AREA)
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Abstract
The invention discloses a conductor of electronic part, which comprises the following parts: conductive base (1), Sn alloy coating layer (2) with Sn and Bi, Cu, Ag or Sn and Zn on the positive layer of conductive base (1), upper coating layer (3) with Zn coating layer, Ag coating layer, SnZn alloy coating layer, SnAg alloy coating layer or SnBi alloy coating layer on the surface of Sn alloy coating layer (2), wherein the density of Bi, Cu, Ag or Zn is 0.1-15%; the total thickness of Sn alloy coating layer (2) and upper coating layer (3) is 0.5-20 mum.
Description
Technical field
The present invention relates to the flat cable of electronic component-use lead and this lead of use.More particularly, the present invention relates to not use poisonous lead and have electronic component-use lead and the flat cable that prevents short circuit reason effect.
Background technology
Sn (tin) coating is widely used in light current industry with in parts and the used in electronic industry parts etc. as the diaphragm that improves weldability or diaphragm that underseal is used.
Knownly in Sn (tin) coating whisker (whisker) can take place, for example in the minimum pliability flat cable in the interval of flat cable, have this whisker to become the situation of short circuit reason.
As the countermeasure that prevents this short circuit, heat treatments such as the annealing in process of carrying out are arranged, and the method that replaces Sn coating with other coating diaphragm such as gold plate or SnPb alloy layer.
But, only carry out the heat treatment of such prior art, can't fully prevent the generation of whisker.And though whisker does not take place gold plate etc., cost is too high, and the SnPb alloy layer owing to use plumbously, is not preferred from the angle of environmental protection then.Therefore, in recent years, SnBi (bismuth) alloy layer just is being subjected to people's watch attentively (for example with reference to patent documentation 1), still, is preventing to remain inadequate on the whisker generation this point.
Patent documentation 1: TOHKEMY 2002-30468 communique
Summary of the invention
Therefore, the present invention is in view of the above problems and proposes, its purpose be to provide a kind of have coating based on tin, fully do not contain Toxic matter lead, cost is low and can reliably prevent the electronic component-use lead of whisker generation and the flat cable that is made of this lead.
In order to address the above problem, electronic component-use lead of the present invention, be the Sn alloy layer that on conducting base, forms at least a element among Bi, the Cu (copper) contain 0.1～15 weight %, Ag (silver), the Zn (zinc), and layer form Zn coating, Ag coating, SnZn alloy layer, SnAg alloy layer or SnBi alloy layer and constitute thereon.Here, preferably this electronic component-use lead is further implemented heat treatments such as reflow (reflow) processing, formed the alloy-layer of tin diffusion.
And the aggregate thickness of the Zn coating on preferred above-mentioned Sn alloy layer and its upper strata, Ag coating, SnZn alloy layer, SnAg alloy layer or SnBi alloy layer is 0.5～20 μ m.
And the present invention is to use these electronic component-use leads to make flat cable.Here, after rolling into flat cable, the aggregate thickness of the Zn coating on preferred above-mentioned Sn alloy layer and its upper strata, Ag coating, SnZn alloy layer, SnAg alloy layer or SnBi alloy layer is 0.1～3 μ m, and preferably to heat treatments such as this flat cable enforcement annealing in process.
Because lead of the present invention and the flat cable that uses it, it is the Sn alloy layer that on conducting base, forms at least a element among Bi, the Cu (copper) contain 0.1～15 weight %, Ag (silver), the Zn (zinc), so it is unleaded and be of value to environmental protection, and the effect of the whisker that can be inhibited, simultaneously, because layer is formed with Zn coating, Ag coating, SnZn alloy layer, SnAg alloy layer or SnBi alloy layer thereon, so can prevent the generation of whisker more reliably.
And, owing to implement heat treatments such as reflow processing and annealing in process, tin is diffused in Zn coating, Ag coating, SnZn alloy layer, SnAg alloy layer or the SnBi alloy layer on upper strata and forms alloy-layer, so can keep its electrical characteristic.
And, because the Sn alloy layer and the Zn coating on its upper strata, the aggregate thickness of Ag coating are 0.5～20 μ m on the lead, in addition, after rolling into flat cable, the aggregate thickness of the Zn coating on above-mentioned Sn alloy layer and its upper strata, Ag coating, SnZn alloy layer, SnAg alloy layer or SnBi alloy layer is 0.1～3 μ m, so can also prevent the generation of whisker reliably when keeping identical electrical characteristic.
Description of drawings
Fig. 1 (a) is the sectional view of the lead of first execution mode, (b) is the sectional view of the lead of second execution mode.
Fig. 2 (a) is the sectional view of the flat cable of the 3rd execution mode, (b) is the sectional view of the flat cable of the 4th execution mode.
Symbol description:
A, B-lead
C, D-flat cable
The 1-conducting base
2-Sn alloy layer (bottom coating)
3-upper strata coating
The 4-alloy-layer
Embodiment
Below, be described with reference to the accompanying drawings embodiments of the present invention.
Fig. 1 is the cross section structure figure of expression lead, and Fig. 2 represents the cross section structure figure of flat cable.Fig. 1 (a) is the sectional view of the lead of first execution mode, (b) is the sectional view of the lead of second execution mode.Fig. 2 (a) is the sectional view of the flat cable of the 3rd execution mode, (b) is the sectional view of the flat cable of the 4th execution mode.Symbol 1 expression conducting base among the figure, 2 expression Sn alloy layers (bottom coating), 3 expression upper strata coating, 4 expression alloy-layers.
Shown in Fig. 1 (a), the lead A of first execution mode, be by conducting base 1, cover in the above Sn and the Sn alloy layer (bottom coating) 2 of Bi, Cu, Ag or Sn and Zn, and the upper strata coating 3 of Zn coating, Ag coating, SnZn alloy layer, SnAg alloy layer or the SnBi alloy layer of layer formation constitutes thereon.
As conducting base 1, can use copper alloy wires such as copper cash, or brass, phosphor bronze, also can use the surface coverage of iron wires such as CP line that the line of copper or copper alloy is arranged.
Bi in the Sn alloy layer 2, Cu, Ag or Zn, containing under the multiple situation, its mean concentration is set at 0.1～15 weight %, and in addition, this Sn alloy layer 2 is set in the scope of 0.5～20 μ m with the aggregate thickness of the upper strata coating 3 of layer formation thereon.
By in Sn, containing at least a among Bi, Cu, Ag or the Zn, though can prevent the generation of whisker to a certain extent, but at above-mentioned content during less than 0.1 weight %, can not fully be prevented the effect that whisker takes place, and during greater than 15 weight %, the hardness of Sn alloy layer 2 increases, unfavorable condition such as take place that crackle breaks easily, and cost also increases.
The present invention is by further forming the upper strata coating 3 that is made of Zn coating, Ag coating, SnZn alloy layer, SnAg alloy layer or SnBi alloy layer on this Sn alloy layer 2, can not lose its electrical characteristic, and prevent the generation of whisker more reliably.But because this upper strata coating is when blocked up, electrical characteristic descends, thus be preferably below the 2 μ m, more preferably below the 0.5 μ m.For example, in the layer after constituting coating 2 by the ZnSn alloy and implementing Zn coating thereon, comprise the Zn concentration among Sn alloy layer 2 and upper strata coating 3 all, the situation above 15 weight % is arranged certainly.This point is also identical in following other execution mode.
Then, lead B in second execution mode, be that the Sn alloy layer 2 of described first execution mode is carried out heat treatments such as reflow (reflow) processing with the upper strata coating 3 of Zn coating, Ag coating, SnZn alloy layer, SnAg alloy layer or the SnBi alloy layer on its upper strata, thereby be changed to the lead of the alloy-layer 4 of tin diffusion.
Then, the flat cable C in the 3rd execution mode, the cable that is to use lead A to make, the flat cable D in the 4th execution mode, the cable that is to use lead B to make by extending and rolling machine by extending and rolling machine.
The aggregate thickness that these roll into Sn alloy layer 2 and upper strata coating 3 behind the flat cable is preferably 0.1～3 μ m, more preferably 0.3～0.7 μ m.
Wherein, the flat cable D in the 4th execution mode makes by heat treatments such as annealing that flat cable C is switched on.
(embodiment 1)
After the copper cash (conducting base) that to diameter is 0.6mm carried out pre-treatments such as electrolytic degreasing, pickling, (Japanese first name: the former medicine of stone) the plating medicine of producing was implemented the SnBi alloy plating, forms Sn alloy layer (bottom coating) to use the former drug company of stone.
Then, implement Zn and electroplate, form upper strata coating, constitute lead with double-deck coating.And (Japanese first name: サ イ カ ワ) extending and rolling machine of Sheng Chaning extends, rolls and the annealing in process of switching on, and makes flat cable by SAIKAWA company.
(embodiment 2)
After the copper cash (conducting base) that to diameter is 0.6mm carries out pre-treatments such as electrolytic degreasing, pickling, (Japanese first name: day Mining メ タ Le プ レ one テ ィ Application グ) the plating medicine of producing is implemented the SnZn alloy plating, forms Sn alloy layer (bottom coating) to use a day ore deposit Metal Plating company.
Then, implement Zn and electroplate, form upper strata coating, constitute lead with double-deck coating.And, extend, roll and the annealing in process of switching on by above-mentioned extending and rolling machine, make flat cable.
(embodiment 3)
After the copper cash (conducting base) that to diameter is 0.6mm carried out pre-treatments such as electrolytic degreasing, pickling, the electroplate liquid that village industrial group in the use (Japanese first name: go up village's industry) produces was implemented the SnCu alloy plating, forms Sn alloy layer (bottom coating).
Then, implement Zn and electroplate, form upper strata coating, constitute lead with double-deck coating.And, extend, roll and the annealing in process of switching on by above-mentioned extending and rolling machine, make flat cable.
(embodiment 4)
After the copper cash (conducting base) that to diameter is 0.6mm carried out pre-treatments such as electrolytic degreasing, pickling, the plating medicine that uses the former drug company of stone to produce was implemented the SnAg alloy plating, forms Sn alloy layer (bottom coating).
Then, implement Zn and electroplate, form upper strata coating, constitute lead with double-deck coating.And, extend, roll and the annealing in process of switching on by above-mentioned extending and rolling machine, make flat cable.
(embodiment 5)
After the copper cash (conducting base) that to diameter is 0.6mm carried out pre-treatments such as electrolytic degreasing, pickling, the plating medicine that uses the former drug company of stone to produce was implemented the SnBi alloy plating, forms Sn alloy layer (bottom coating).
Then, (Japanese first name: メ Le テ ッ Network ス) electroplate liquid of producing is implemented the Ag plating, forms upper strata coating, constitutes the lead with double-deck coating to use Meltex company.And, extend, roll and the annealing in process of switching on by above-mentioned extending and rolling machine, make flat cable.
(embodiment 6)
After the copper cash (conducting base) that to diameter is 0.6mm carried out pre-treatments such as electrolytic degreasing, pickling, the plating medicine that uses the former drug company of stone to produce was implemented the SnBi alloy plating, forms Sn alloy-layer (bottom coating).
Then, use day electroplate liquid of ore deposit Metal Plating company production to form the SnZn alloy layer, constitute lead with double-deck coating.And, extend, roll and the annealing in process of switching on by above-mentioned extending and rolling machine, make flat cable.
(embodiment 7)
After the copper cash (conducting base) that to diameter is 0.6mm carries out pre-treatments such as electrolytic degreasing, pickling, use day electroplate liquid of ore deposit Metal Plating company production to implement the SnZn alloy plating, form Sn alloy-layer (bottom coating).
Then, use day electroplate liquid of ore deposit Metal Plating company production, form the SnZn coating of Zn concentration (%), constitute lead with double-deck coating than plated underlayer floor height.And, extend, roll and the annealing in process of switching on by above-mentioned extending and rolling machine, make flat cable.
(embodiment 8)
After the copper cash (conducting base) that to diameter is 0.6mm carries out pre-treatments such as electrolytic degreasing, pickling, use day electroplate liquid of ore deposit Metal Plating company production to implement the SnZn alloy plating, form Sn alloy-layer (bottom coating).
Then, the electroplate liquid that uses the former drug company of stone to produce forms the SnBi alloy layer, constitutes the lead with double-deck coating.And, extend, roll and the annealing in process of switching on by above-mentioned extending and rolling machine, make flat cable.
(comparative example 1～3)
After the copper cash (conducting base) that to diameter is 0.6mm carried out pre-treatments such as electrolytic degreasing, pickling, the plating medicine that uses the former drug company of stone to produce was implemented Sn and is electroplated, and forms the lead with Sn coating.And, extend, roll and the annealing in process of switching on by above-mentioned extending and rolling machine, make flat cable.
(comparative example 4)
After the copper cash (conducting base) that to diameter is 0.6mm carried out pre-treatments such as electrolytic degreasing, pickling, similarly to Example 1, the plating medicine that uses the former drug company of stone to produce was implemented the SnBi alloy plating, forms the lead with this alloy layer.And, extend, roll and the annealing in process of switching on by above-mentioned extending and rolling machine, make flat cable.
(comparative example 5)
After the copper cash (conducting base) that to diameter is 0.6mm carries out pre-treatments such as electrolytic degreasing, pickling, similarly to Example 2, use day plating medicine of ore deposit Metal Plating company production to implement the SnZn alloy plating, form lead with this alloy layer.And, extend, roll and the annealing in process of switching on by above-mentioned extending and rolling machine, make flat cable.
For to the foregoing description 1～8, each flat cable of comparative example 1～5 is estimated separately and is carried out lamination (laminate) and process, connector tabling with the Sn plating of carrying out the reflow processing, after at room temperature placing 1000 hours, the situation that the scanning electron microscopy of producing with the Hitachi takes place whisker is confirmed and is estimated.
The evaluation result of each embodiment and comparative example is as shown in table 1 below.
The thickness of the bottom coating in the table 1, the thickness of upper strata coating, aggregate thickness are the thickness that rolls in the preceding lead of flat cable, maximum length (μ m) during whisker is estimated is the length of long whisker in the whisker that takes place, and incidence (%) is (number of whisker generation conductor)/(estimating the sum of conductor).
Table 1
Can obtain following result by table 1.
(1) all below 20 μ m, the whisker incidence is all below 10% for any one of embodiment 1～8, whisker maximum length.Hence one can see that, even compare with comparative example 4,5, also can reliably prevent the generation of whisker.
(2) as can be known, all more than 50 μ m, the whisker incidence is all more than 20% for any one whisker maximum length by comparative example 1～5.Comparative example 1～3 is compared with comparative example 4,5, though can confirm the Sn-Bi alloy layer, the Sn-Zn alloy layer has the effect that prevents that whisker from taking place, and compares with embodiment 1～8, and this effect differs greatly, and the effect of comparative example 4,5 is inadequate as can be known.
Claims (6)
1. electronic component-use lead is characterized in that:
Form the Sn alloy layer of at least a element among Bi, the Ag contain 0.1～15 weight %, the Zn on conducting base, layer is formed with Zn coating, SnZn alloy layer or SnBi alloy layer thereon,
The combination of the coating on described Sn alloy layer and upper strata thereof is selected from
The combination of SnBi alloy layer and Zn coating,
The combination of SnZn alloy layer and Zn coating,
The combination of SnAg alloy layer and Zn coating,
The combination of SnBi alloy layer and SnZn alloy layer,
The combination of SnZn alloy layer and SnZn alloy layer and
In the combination of SnZn alloy layer and SnBi alloy layer any.
2. electronic component-use lead according to claim 1 is characterized in that:
This electronic component-use lead is implemented the heat treatment that reflow is handled.
3. electronic component-use lead according to claim 1 and 2 is characterized in that:
The aggregate thickness of the Zn coating on described Sn alloy layer and its upper strata, SnZn alloy layer or SnBi alloy layer is 0.5～20 μ m.
4. flat cable that uses each described electronic component-use wire producing in the claim 1～3.
5. flat cable according to claim 4 is characterized in that:
After rolling into flat cable, the aggregate thickness of the Zn coating on described Sn alloy layer and its upper strata, SnZn alloy layer or SnBi alloy layer is 0.1～3 μ m.
6. flat cable of claim 4 or 5 described flat cables being implemented the heat treatment of annealing in process and forming.
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005-110003 | 2005-04-06 | ||
| JP2005110003 | 2005-04-06 | ||
| JP2005110003 | 2005-04-06 | ||
| JP2005207607 | 2005-07-15 | ||
| JP2005207607 | 2005-07-15 | ||
| JP2005-207607 | 2005-07-15 | ||
| JP2006-076122 | 2006-03-20 | ||
| JP2006076122A JP2007046150A (en) | 2005-04-06 | 2006-03-20 | Lead wire for electronic part and flat cable comprising the same |
| JP2006076122 | 2006-03-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1848305A CN1848305A (en) | 2006-10-18 |
| CN1848305B true CN1848305B (en) | 2010-08-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006100727098A Active CN1848305B (en) | 2005-04-06 | 2006-04-06 | Electronic assembly wire and flat cable comprising same |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2007046150A (en) |
| CN (1) | CN1848305B (en) |
| HK (1) | HK1096194A1 (en) |
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| CN101051535B (en) * | 2006-04-06 | 2012-09-19 | 日立电线株式会社 | Conductor for wiring, manufacturing method thereof, terminal connection portion, lead-free solder alloy |
| CN101308713B (en) * | 2007-05-16 | 2012-04-11 | 住友电气工业株式会社 | Flat cable |
| JP5479766B2 (en) * | 2008-03-31 | 2014-04-23 | 古河電気工業株式会社 | Metal square wire for connecting parts and manufacturing method thereof |
| JP5479767B2 (en) * | 2008-03-31 | 2014-04-23 | 古河電気工業株式会社 | Metal square wire for connecting parts and manufacturing method thereof |
| JP5181876B2 (en) * | 2008-06-30 | 2013-04-10 | 住友電気工業株式会社 | Flat cable manufacturing method |
| CN102575369B (en) * | 2009-06-29 | 2015-08-05 | Om产业股份有限公司 | The manufacture method of electrical element and electrical element |
| CN102082001B (en) * | 2009-11-30 | 2013-12-18 | 住友电气工业株式会社 | Flat cable and manufacturing method thereof |
| JP2012124025A (en) * | 2010-12-08 | 2012-06-28 | Hitachi Cable Ltd | Plated copper wire and manufacturing method thereof |
| CN103103525B (en) * | 2012-11-26 | 2016-02-03 | 晶锋集团股份有限公司 | The manufacture method of lead-free aluminium conductor in a kind of coating |
| JPWO2015147213A1 (en) * | 2014-03-26 | 2017-04-13 | 新日鉄住金マテリアルズ株式会社 | Interconnector for conductors and solar cells |
| CN104392773B (en) * | 2014-11-13 | 2016-06-08 | 无锡信大气象传感网科技有限公司 | Copper alloy conduction line and manufacture method |
| JP6839952B2 (en) * | 2016-10-05 | 2021-03-10 | Ｄｏｗａメタルテック株式会社 | Sn plating material and its manufacturing method |
| CN109509731A (en) * | 2017-09-14 | 2019-03-22 | 屏东科技大学 | Tin-silver joint structure of semiconductor and its manufacturing method |
| CN111261317B (en) * | 2020-04-09 | 2021-08-31 | 江东合金技术有限公司 | A kind of preparation method of high-performance anti-oxidation copper conductor material for special cable |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11330340A (en) * | 1998-05-21 | 1999-11-30 | Hitachi Ltd | Semiconductor device and its mounting structure |
| JP2000123637A (en) * | 1998-10-15 | 2000-04-28 | Hitachi Cable Ltd | Electronic component leads |
| JP2000156450A (en) * | 1998-11-19 | 2000-06-06 | Hitachi Cable Ltd | Electronic component leads |
| JP2002317295A (en) * | 2001-04-19 | 2002-10-31 | Furukawa Electric Co Ltd:The | REFLOW TREATED Sn ALLOY PLATING MATERIAL AND FIT TYPE CONNECTING TERMINAL USING THE SAME |
| JP2005048205A (en) * | 2003-07-29 | 2005-02-24 | Fujikura Ltd | Heat treatment method for connector-fitted part of electroplated terminal part of flexible flat cable, flexible printed circuit board or the like |
| JP4367149B2 (en) * | 2004-01-30 | 2009-11-18 | 日立電線株式会社 | Flat cable conductor, method of manufacturing the same, and flat cable |
-
2006
- 2006-03-20 JP JP2006076122A patent/JP2007046150A/en active Pending
- 2006-04-06 CN CN2006100727098A patent/CN1848305B/en active Active
-
2007
- 2007-03-22 HK HK07103072.8A patent/HK1096194A1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| HK1096194A1 (en) | 2007-05-25 |
| JP2007046150A (en) | 2007-02-22 |
| CN1848305A (en) | 2006-10-18 |
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