GB9218898D0 - Semiconductor memory devices - Google Patents

Semiconductor memory devices

Info

Publication number: GB9218898D0
Authority: GB; United Kingdom
Prior art keywords: semiconductor memory; memory devices; devices; semiconductor; memory
Prior art date: 1991-09-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

GB929218898A

Other versions

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Samsung Electronics Co Ltd

Original Assignee

Samsung Electronics Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-09-07

Filing date

1992-09-07

Publication date

1992-10-21

1992-09-07 Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd

1992-09-07 Priority to GB9514098A priority Critical patent/GB2290908B/en

1992-09-07 Priority to GB9521898A priority patent/GB2293691B/en

1992-10-21 Publication of GB9218898D0 publication Critical patent/GB9218898D0/en

1993-03-10 Publication of GB2259406A publication Critical patent/GB2259406A/en

1996-05-01 Application granted granted Critical

1996-05-01 Publication of GB2259406B publication Critical patent/GB2259406B/en

2012-09-07 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/714—Electrodes having non-planar surfaces, e.g. formed by texturisation having horizontal extensions

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Semiconductor Memories (AREA)
Semiconductor Integrated Circuits (AREA)

GB9218898A 1991-09-07 1992-09-07 Semiconductor memory devices Expired - Fee Related GB2259406B (en)

Priority Applications (2)

Application Number	Priority Date	Filing Date	Title
GB9514098A GB2290908B (en)	1991-09-07	1992-09-07	Semiconductor memory device
GB9521898A GB2293691B (en)	1991-09-07	1992-09-07	Semiconductor memory devices

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
KR910015626		1991-09-07
KR920005409		1992-03-31

Publications (3)

Publication Number	Publication Date
GB9218898D0 true GB9218898D0 (en)	1992-10-21
GB2259406A GB2259406A (en)	1993-03-10
GB2259406B GB2259406B (en)	1996-05-01

Family

ID=26628732

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB9218898A Expired - Fee Related GB2259406B (en)	1991-09-07	1992-09-07	Semiconductor memory devices

Country Status (6)

Country	Link
JP (1)	JP2690434B2 (en)
DE (1)	DE4229837C2 (en)
FR (1)	FR2681178A1 (en)
GB (1)	GB2259406B (en)
IT (1)	IT1256130B (en)
TW (1)	TW222710B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR960002097B1 (en) *	1992-02-28	1996-02-10	삼성전자주식회사	Method of making a capacitor for a semiconductor device
US5254503A (en) *	1992-06-02	1993-10-19	International Business Machines Corporation	Process of making and using micro mask
JPH0774268A (en) *	1993-07-07	1995-03-17	Mitsubishi Electric Corp	Semiconductor memory and fabrication thereof
US5383088A (en) *	1993-08-09	1995-01-17	International Business Machines Corporation	Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics
US5512768A (en) *	1994-03-18	1996-04-30	United Microelectronics Corporation	Capacitor for use in DRAM cell using surface oxidized silicon nodules
US5869368A (en) *	1997-09-22	1999-02-09	Yew; Tri-Rung	Method to increase capacitance
KR100675275B1 (en)	2004-12-16	2007-01-26	삼성전자주식회사	Semiconductor Device and Pad Arrangement Method
TWI295822B (en)	2006-03-29	2008-04-11	Advanced Semiconductor Eng	Method for forming a passivation layer
FR2988712B1 (en)	2012-04-02	2014-04-11	St Microelectronics Rousset	INTEGRATED CIRCUIT EQUIPPED WITH A DEVICE FOR DETECTING ITS SPACE ORIENTATION AND / OR CHANGE OF THIS ORIENTATION.
FR2998417A1 (en) *	2012-11-16	2014-05-23	St Microelectronics Rousset	METHOD FOR PRODUCING AN INTEGRATED CIRCUIT POINT ELEMENT, AND CORRESPONDING INTEGRATED CIRCUIT
US11825645B2 (en)	2020-06-04	2023-11-21	Etron Technology, Inc.	Memory cell structure
JP7339319B2 (en) *	2021-12-03	2023-09-05	▲ゆ▼創科技股▲ふん▼有限公司	memory cell structure

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS63240057A (en) *	1987-03-27	1988-10-05	Fujitsu Ltd	stack type capacitor
JPH01282855A (en) *	1988-05-09	1989-11-14	Mitsubishi Electric Corp	How to form a capacitor on a semiconductor substrate
JPH03165552A (en) *	1989-11-24	1991-07-17	Sony Corp	Stacked capacitor type dram and manufacture thereof
JPH03166730A (en) *	1989-11-27	1991-07-18	Seiko Instr Inc	Manufacture of semiconductor device
DD299990A5 (en) *	1990-02-23	1992-05-14	Dresden Forschzentr Mikroelek	One-transistor memory cell arrangement and method for its production
US5049517A (en) *	1990-11-07	1991-09-17	Micron Technology, Inc.	Method for formation of a stacked capacitor
US5037773A (en) *	1990-11-08	1991-08-06	Micron Technology, Inc.	Stacked capacitor doping technique making use of rugged polysilicon
KR930009583B1 (en) *	1990-11-29	1993-10-07	삼성전자 주식회사	Manufacturing Method of Semiconductor Memory Device with Villi-shaped Capacitor Structure
JPH04207066A (en) *	1990-11-30	1992-07-29	Matsushita Electric Ind Co Ltd	Manufacture of semiconductor device
KR930009593B1 (en) *	1991-01-30	1993-10-07	삼성전자 주식회사	Highly Integrated Semiconductor Memory Device and Manufacturing Method (HCC Cell)
KR940005288B1 (en) *	1991-07-11	1994-06-15	금성일렉트론 주식회사	Manufacturing Method of Semiconductor Device

1992
- 1992-09-02 TW TW081106957A patent/TW222710B/zh active
- 1992-09-04 IT ITMI922067A patent/IT1256130B/en active IP Right Grant
- 1992-09-07 DE DE4229837A patent/DE4229837C2/en not_active Expired - Fee Related
- 1992-09-07 FR FR9210645A patent/FR2681178A1/en active Granted
- 1992-09-07 GB GB9218898A patent/GB2259406B/en not_active Expired - Fee Related
- 1992-09-07 JP JP4265348A patent/JP2690434B2/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
IT1256130B (en)	1995-11-29
ITMI922067A1 (en)	1994-03-04
GB2259406B (en)	1996-05-01
FR2681178B1 (en)	1997-02-07
DE4229837A1 (en)	1993-03-11
JP2690434B2 (en)	1997-12-10
DE4229837C2 (en)	1996-07-11
ITMI922067A0 (en)	1992-09-04
JPH05198745A (en)	1993-08-06
GB2259406A (en)	1993-03-10
TW222710B (en)	1994-04-21
FR2681178A1 (en)	1993-03-12

Publication	Publication Date	Title
KR970002002B1 (en)	1997-02-20	Semiconductor memory device
EP0509811A3 (en)	1993-12-08	Semiconductor memory device
KR970005694B1 (en)	1997-04-18	Semiconductor memory device
KR960016104B1 (en)	1996-11-27	Semiconductor memory device
KR950008480B1 (en)	1995-07-31	Semiconductor memory device
EP0519584A3 (en)	1993-09-22	Semiconductor memory
KR970001894B1 (en)	1997-02-18	Semiconductor memory device
EP0520788A3 (en)	1995-02-15	Semiconductor memory devices
GB9304655D0 (en)	1993-04-28	Semiconductor memory device
EP0514679A3 (en)	1993-02-03	Semiconductor integrated memory device
GB2280975B (en)	1997-11-26	Semiconductor memory devices
GB9118624D0 (en)	1991-10-16	Semiconductor memory devices
EP0449422A3 (en)	1992-02-26	Semiconductor memory device
KR100251036B1 (en)	2000-05-01	Semiconductor memory device
KR960009033B1 (en)	1996-07-10	Semiconductor memory
KR960001785B1 (en)	1996-02-05	Semiconductor memory device
EP0499460A3 (en)	1993-10-06	Semiconductor memory device
GB2259406B (en)	1996-05-01	Semiconductor memory devices
EP0520425A3 (en)	1995-03-22	Semiconductor memory device
GB9121767D0 (en)	1991-11-27	Semiconductor memory device
EP0503524A3 (en)	1993-11-03	Semiconductor memory device
EP0583163A3 (en)	1994-07-27	Semiconductor memory device
GB2253092B (en)	1994-11-16	Semiconductor memory device
EP0457347A3 (en)	1992-10-28	Semiconductor memory device
EP0454998A3 (en)	1993-03-17	Semiconductor memory device

Legal Events

Date	Code	Title	Description
2010-05-26	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 20090907