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GB9304655D0 - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
GB9304655D0
GB9304655D0 GB939304655A GB9304655A GB9304655D0 GB 9304655 D0 GB9304655 D0 GB 9304655D0 GB 939304655 A GB939304655 A GB 939304655A GB 9304655 A GB9304655 A GB 9304655A GB 9304655 D0 GB9304655 D0 GB 9304655D0
Authority
GB
United Kingdom
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB939304655A
Other versions
GB2269049A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9304655D0 publication Critical patent/GB9304655D0/en
Publication of GB2269049A publication Critical patent/GB2269049A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB9304655A 1992-07-13 1993-03-08 Semiconductor memory device Withdrawn GB2269049A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920012438A KR940003026A (en) 1992-07-13 1992-07-13 Semiconductor device using triple well

Publications (2)

Publication Number Publication Date
GB9304655D0 true GB9304655D0 (en) 1993-04-28
GB2269049A GB2269049A (en) 1994-01-26

Family

ID=19336233

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9304655A Withdrawn GB2269049A (en) 1992-07-13 1993-03-08 Semiconductor memory device

Country Status (7)

Country Link
JP (1) JPH0685200A (en)
KR (1) KR940003026A (en)
DE (1) DE4300826A1 (en)
FR (1) FR2693587A1 (en)
GB (1) GB2269049A (en)
IT (1) IT1271946B (en)
TW (1) TW210402B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113257293A (en) * 2020-01-28 2021-08-13 美光科技公司 Semiconductor device including array power pads and associated semiconductor device packages and systems

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3002371B2 (en) 1993-11-22 2000-01-24 富士通株式会社 Semiconductor device and manufacturing method thereof
US5595925A (en) * 1994-04-29 1997-01-21 Texas Instruments Incorporated Method for fabricating a multiple well structure for providing multiple substrate bias for DRAM device formed therein
WO1995035572A1 (en) 1994-06-20 1995-12-28 Neomagic Corporation Graphics controller integrated circuit without memory interface
JP4037470B2 (en) 1994-06-28 2008-01-23 エルピーダメモリ株式会社 Semiconductor device
US5696721A (en) * 1995-05-05 1997-12-09 Texas Instruments Incorporated Dynamic random access memory having row decoder with level translator for driving a word line voltage above and below an operating supply voltage range
JPH0955483A (en) * 1995-06-09 1997-02-25 Mitsubishi Electric Corp Semiconductor memory device
TW328641B (en) * 1995-12-04 1998-03-21 Hitachi Ltd Semiconductor integrated circuit device and process for producing the same
US6750527B1 (en) 1996-05-30 2004-06-15 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device having a plurality of wells, test method of testing the semiconductor integrated circuit device, and test device which executes the test method
JP4534163B2 (en) * 1997-06-16 2010-09-01 エルピーダメモリ株式会社 Semiconductor integrated circuit device
JP4014708B2 (en) 1997-08-21 2007-11-28 株式会社ルネサステクノロジ Method for designing semiconductor integrated circuit device
KR100275725B1 (en) * 1997-12-27 2000-12-15 윤종용 Semiconductor memory device with triple well structure and manufacturing method therefor
JP2000101045A (en) * 1998-07-23 2000-04-07 Mitsubishi Electric Corp Semiconductor device
JP2001291779A (en) * 2000-04-05 2001-10-19 Mitsubishi Electric Corp Semiconductor device and method of manufacturing the same
JPWO2003003461A1 (en) * 2001-06-27 2004-10-21 株式会社ルネサステクノロジ Semiconductor integrated circuit device and noise reduction method
US6930930B2 (en) 2002-11-06 2005-08-16 Infineon Technologies Ag Using isolated p-well transistor arrangements to avoid leakage caused by word line/bit line shorts
TWI256724B (en) * 2003-08-06 2006-06-11 Sanyo Electric Co Semiconductor device
KR100571650B1 (en) 2005-03-31 2006-04-17 주식회사 하이닉스반도체 Low Voltage Semiconductor Memory Device
DE102005030372A1 (en) 2005-06-29 2007-01-04 Infineon Technologies Ag Apparatus and method for controlling the threshold voltage of a transistor, in particular a transistor of a sense amplifier of a semiconductor memory device
JP4967478B2 (en) * 2006-06-30 2012-07-04 富士通セミコンダクター株式会社 Semiconductor device and manufacturing method thereof
JP5022643B2 (en) * 2006-07-13 2012-09-12 株式会社東芝 ESD protection circuit for semiconductor device
KR100817417B1 (en) * 2006-12-26 2008-03-27 동부일렉트로닉스 주식회사 High voltage CMOS device and its manufacturing method
JP5104377B2 (en) * 2008-02-15 2012-12-19 セイコーエプソン株式会社 Voltage stabilizer
KR101610829B1 (en) 2009-12-15 2016-04-11 삼성전자주식회사 Flash semiconductor device having tripple well structure
KR101585616B1 (en) 2009-12-16 2016-01-15 삼성전자주식회사 Semiconductor device and method for fabricating the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62155555A (en) * 1985-09-18 1987-07-10 Sony Corp Complementary MOS transistor
DE3900769A1 (en) * 1989-01-12 1990-08-09 Fraunhofer Ges Forschung INTEGRATED CIRCUIT WITH AT LEAST ONE N-CHANNEL FET AND AT LEAST ONE P-CHANNEL FET
US5157281A (en) * 1991-07-12 1992-10-20 Texas Instruments Incorporated Level-shifter circuit for integrated circuits

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113257293A (en) * 2020-01-28 2021-08-13 美光科技公司 Semiconductor device including array power pads and associated semiconductor device packages and systems
CN113257293B (en) * 2020-01-28 2023-02-03 美光科技公司 Semiconductor devices including array power pads and associated semiconductor device packages and systems

Also Published As

Publication number Publication date
GB2269049A (en) 1994-01-26
ITMI930230A0 (en) 1993-02-10
ITMI930230A1 (en) 1994-08-10
JPH0685200A (en) 1994-03-25
IT1271946B (en) 1997-06-10
KR940003026A (en) 1994-02-19
DE4300826A1 (en) 1994-01-20
FR2693587A1 (en) 1994-01-14
TW210402B (en) 1993-08-01

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)