GB2290908B - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number: GB2290908B
Authority: GB; United Kingdom
Prior art keywords: memory device; semiconductor memory; semiconductor; memory
Prior art date: 1991-09-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

GB9514098A

Other versions

GB2290908A (en

GB9514098D0 (en

Inventor

Dae-Je Chin

Tae-Young Chung

Young-Woo Park

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Samsung Electronics Co Ltd

Original Assignee

Samsung Electronics Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-09-07

Filing date

1992-09-07

Publication date

1996-05-01

1992-09-07 Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd

1992-09-07 Priority claimed from GB9218898A external-priority patent/GB2259406B/en

1995-09-13 Publication of GB9514098D0 publication Critical patent/GB9514098D0/en

1996-01-10 Publication of GB2290908A publication Critical patent/GB2290908A/en

1996-05-01 Application granted granted Critical

1996-05-01 Publication of GB2290908B publication Critical patent/GB2290908B/en

2012-09-07 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/714—Electrodes having non-planar surfaces, e.g. formed by texturisation having horizontal extensions

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Semiconductor Memories (AREA)
Semiconductor Integrated Circuits (AREA)

GB9514098A 1991-09-07 1992-09-07 Semiconductor memory device Expired - Fee Related GB2290908B (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
KR910015626		1991-09-07
KR920005409		1992-03-31
GB9218898A GB2259406B (en)	1991-09-07	1992-09-07	Semiconductor memory devices

Publications (3)

Publication Number	Publication Date
GB9514098D0 GB9514098D0 (en)	1995-09-13
GB2290908A GB2290908A (en)	1996-01-10
GB2290908B true GB2290908B (en)	1996-05-01

Family

ID=27266354

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
GB9514098A Expired - Fee Related GB2290908B (en)	1991-09-07	1992-09-07	Semiconductor memory device
GB9521898A Expired - Fee Related GB2293691B (en)	1991-09-07	1992-09-07	Semiconductor memory devices

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
GB9521898A Expired - Fee Related GB2293691B (en)	1991-09-07	1992-09-07	Semiconductor memory devices

Country Status (1)

Country	Link
GB (2)	GB2290908B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TW373320B (en) *	1996-05-27	1999-11-01	United Microelectronics Corporaiton	Structure and production method of capacitor of dynamic RAM
EP0813241A1 (en) *	1996-06-12	1997-12-17	United Microelectronics Corporation	Storage capacitor for DRAM memory cell and the process of fabricating the same
JP2930016B2 (en) *	1996-07-04	1999-08-03	日本電気株式会社	Method for manufacturing semiconductor device
CN116234295B (en) *	2021-12-08	2024-03-15	北京超弦存储器研究院	Dynamic random access memory unit, preparation method thereof and dynamic random access memory

Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2130009A (en) *	1982-11-12	1984-05-23	Rca Corp	Polycrystalline silicon layers for semiconductor devices
EP0436491A1 (en) *	1990-01-03	1991-07-10	Micron Technology, Inc.	Dram cell having a texturized polysilicon lower capacitor plate for increased capacitance
US5037773A (en) *	1990-11-08	1991-08-06	Micron Technology, Inc.	Stacked capacitor doping technique making use of rugged polysilicon
EP0448374A1 (en) *	1990-03-20	1991-09-25	Nec Corporation	Method for fabricating a semiconductor device having a capacitor with polycrystalline silicon having micro roughness on the surface
GB2250377A (en) *	1990-11-29	1992-06-03	Samsung Electronics Co Ltd	Method for manufacturing a semiconductor device with villus type capacitor
EP0521644A1 (en) *	1991-06-21	1993-01-07	Nec Corporation	Method of manufacturing polysilicon film

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR930009593B1 (en) *	1991-01-30	1993-10-07	삼성전자 주식회사	Highly Integrated Semiconductor Memory Device and Manufacturing Method (HCC Cell)

1992
- 1992-09-07 GB GB9514098A patent/GB2290908B/en not_active Expired - Fee Related
- 1992-09-07 GB GB9521898A patent/GB2293691B/en not_active Expired - Fee Related

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2130009A (en) *	1982-11-12	1984-05-23	Rca Corp	Polycrystalline silicon layers for semiconductor devices
EP0436491A1 (en) *	1990-01-03	1991-07-10	Micron Technology, Inc.	Dram cell having a texturized polysilicon lower capacitor plate for increased capacitance
EP0448374A1 (en) *	1990-03-20	1991-09-25	Nec Corporation	Method for fabricating a semiconductor device having a capacitor with polycrystalline silicon having micro roughness on the surface
US5037773A (en) *	1990-11-08	1991-08-06	Micron Technology, Inc.	Stacked capacitor doping technique making use of rugged polysilicon
GB2250377A (en) *	1990-11-29	1992-06-03	Samsung Electronics Co Ltd	Method for manufacturing a semiconductor device with villus type capacitor
EP0521644A1 (en) *	1991-06-21	1993-01-07	Nec Corporation	Method of manufacturing polysilicon film

Also Published As

Publication number	Publication date
GB2293691B (en)	1996-06-19
GB9521898D0 (en)	1996-01-03
GB2293691A (en)	1996-04-03
GB2290908A (en)	1996-01-10
GB9514098D0 (en)	1995-09-13

Publication	Publication Date	Title
KR970002002B1 (en)	1997-02-20	Semiconductor memory device
EP0509811A3 (en)	1993-12-08	Semiconductor memory device
KR960016104B1 (en)	1996-11-27	Semiconductor memory device
KR970001894B1 (en)	1997-02-18	Semiconductor memory device
EP0473360A3 (en)	1993-02-03	Semiconductor memory device
EP0514679A3 (en)	1993-02-03	Semiconductor integrated memory device
EP0459316A3 (en)	1992-07-22	Semiconductor memory device
EP0520788A3 (en)	1995-02-15	Semiconductor memory devices
EP0463617A3 (en)	1993-08-18	Semiconductor memory device
EP0467607A3 (en)	1993-04-07	Semiconductor memory device
EP0477938A3 (en)	1994-09-28	Semiconductor memory device
EP0486902A3 (en)	1993-02-03	Semiconductor memory device
EP0449422A3 (en)	1992-02-26	Semiconductor memory device
GB9118624D0 (en)	1991-10-16	Semiconductor memory devices
KR100251036B1 (en)	2000-05-01	Semiconductor memory device
EP0473421A3 (en)	1992-05-06	Semiconductor memory device
EP0471535A3 (en)	1993-08-18	Semiconductor memory device
KR960001785B1 (en)	1996-02-05	Semiconductor memory device
EP0499460A3 (en)	1993-10-06	Semiconductor memory device
EP0520425A3 (en)	1995-03-22	Semiconductor memory device
GB2259406B (en)	1996-05-01	Semiconductor memory devices
EP0464548A3 (en)	1993-08-11	Semiconductor memory device
EP0503524A3 (en)	1993-11-03	Semiconductor memory device
GB9121767D0 (en)	1991-11-27	Semiconductor memory device
GB2253092B (en)	1994-11-16	Semiconductor memory device

Legal Events

Date	Code	Title	Description
2010-05-26	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 20090907