[go: up one dir, main page]

GB910589A - Improvements in semiconductor rectifiers - Google Patents

Improvements in semiconductor rectifiers

Info

Publication number
GB910589A
GB910589A GB261/61A GB26161A GB910589A GB 910589 A GB910589 A GB 910589A GB 261/61 A GB261/61 A GB 261/61A GB 26161 A GB26161 A GB 26161A GB 910589 A GB910589 A GB 910589A
Authority
GB
United Kingdom
Prior art keywords
rectifier
jan
semi
resistance
series
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB261/61A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Publication of GB910589A publication Critical patent/GB910589A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Rectifiers (AREA)
  • Dc-Dc Converters (AREA)
  • Protection Of Static Devices (AREA)

Abstract

910,589. Semi-conductor devices; circuit assemblies. NIPPON ELECTRIC CO. Ltd. Jan. 3, 1961 [Jan. 20, 1960], No. 261/61. Class 37. A semi-conductor rectifier 17 to be used in a smoothing circuit is protected from switching surges by a series thermistor 16 in the same sealed housing as the rectifier. The resistance of the thermistor falls as the rectifier heats up so that the resistance in series with the rectifier is reduced under working conditions.
GB261/61A 1960-01-20 1961-01-03 Improvements in semiconductor rectifiers Expired GB910589A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP135760 1960-01-20

Publications (1)

Publication Number Publication Date
GB910589A true GB910589A (en) 1962-11-14

Family

ID=11499227

Family Applications (1)

Application Number Title Priority Date Filing Date
GB261/61A Expired GB910589A (en) 1960-01-20 1961-01-03 Improvements in semiconductor rectifiers

Country Status (2)

Country Link
DE (1) DE1238102B (en)
GB (1) GB910589A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3513032C2 (en) * 1985-03-20 1987-02-19 thielscher-electronic GmbH, 4100 Duisburg Power supply

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2846592A (en) * 1955-05-20 1958-08-05 Ibm Temperature compensated semiconductor devices
DE1197988B (en) * 1955-09-30 1965-08-05 Philips Nv Semiconducting electrode system
US2930904A (en) * 1956-12-31 1960-03-29 Minnesota Mining & Mfg Temperature modifying means for semiconductor device
NL216859A (en) * 1957-05-01
DE1067531B (en) * 1957-12-14 1959-10-22 Siemens Ag Arrangement with transistors in cascade connection

Also Published As

Publication number Publication date
DE1238102B (en) 1967-04-06

Similar Documents

Publication Publication Date Title
CH401272A (en) High voltage semiconductor rectifier
GB1031465A (en) Alternating current overload protection circuits
GB935710A (en) Improvements in controlled semiconductor rectifiers
JPS5380542A (en) Protective device of gate turn off thyristor
GB910589A (en) Improvements in semiconductor rectifiers
CH438491A (en) Electrical semiconductor arrangement, in particular power rectifier arrangement
BE604166A (en) Semiconductor photovoltaic device
CH412090A (en) Rectifier circuit with several semiconductor rectifier elements
GB1069593A (en) Improvements in or relating to circuit arrangements comprising at least two series-connected semiconductor controlled rectifiers
GB966594A (en) Improvements in or relating to methods of manufacturing semiconductor devices
JPS52137245A (en) Semiconductor gate circuit
AU253876B2 (en) Improvements relating to circuit arrangements employing semiconductor diodes
AU867261A (en) Improvements relating to circuit arrangements employing semiconductor diodes
CA610791A (en) Semiconductor translating devices with embedded electrode
KEMENY The effect of structural unhomogeneity on the p-n boundaries, in relationship to avalanche breakdown(Lowering of avalanche breakdown voltage caused by effect of structural inhomogeneity at p-n semiconductor boundaries)
CA595666A (en) Semiconductor rectifier assembly
FR1295241A (en) Semiconductor rectifier device with self-protection against overvoltage
AU254638B2 (en) Improvements in or relating to electric circuit arrangements incorporating semiconductor controlled rectifiers
AU254637B2 (en) Improvements in or relating to electric circuit arrangements incorporating semiconductor controlled rectifiers
ES266816A1 (en) Stabilization of a transistor oscillator by means of an overflow circuit with reduced power loss
CA618429A (en) Semiconductor power rectifier
AU249061A (en) Improvements in or relating to electric circuit arrangements incorporating semiconductor controlled rectifiers
GB1071667A (en) Improvements in and relating to static switching apparatus
CA609051A (en) Semiconductor switching circuit
GB1041268A (en) Improvements in or relating to rectifier circuits