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GB935710A - Improvements in controlled semiconductor rectifiers - Google Patents

Improvements in controlled semiconductor rectifiers

Info

Publication number
GB935710A
GB935710A GB9852/61A GB985261A GB935710A GB 935710 A GB935710 A GB 935710A GB 9852/61 A GB9852/61 A GB 9852/61A GB 985261 A GB985261 A GB 985261A GB 935710 A GB935710 A GB 935710A
Authority
GB
United Kingdom
Prior art keywords
emitter region
conducting member
semi
conductor
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB9852/61A
Inventor
Peter Arthur Turner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1317754D priority Critical patent/FR1317754A/fr
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to GB9852/61A priority patent/GB935710A/en
Priority to DEA39725A priority patent/DE1209207B/en
Publication of GB935710A publication Critical patent/GB935710A/en
Priority to GB541/64A priority patent/GB987169A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/233—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Die Bonding (AREA)

Abstract

935,710. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. Feb. 21, 1962 [March 17, 1961], No. 9852/61. Class 37. A controlled rectifier employs a semi-conductor PNPN structure, wherein a portion of the region next to the emitter region 4 extends through to the surface of the emitter region and has an electrically conducting member 6 of similar configuration in ohmic contact therewith and a terminal member 8 attached to the conducting member 6, the whole forming a switching-off electrode for the rectifier, the area of the extended portion being small compared with the surface area of the emitter region 4, but distributed over the emitter region, substantially the whole of the exposed emitter region having an electrically conducting member 7 in contact therewith. A terminal plate 10 makes contact with the conducting member 7. The switching-off electrode 6 may be inset into the semi-conductor structure so as to lie below the surface of the emitter.
GB9852/61A 1961-03-17 1961-03-17 Improvements in controlled semiconductor rectifiers Expired GB935710A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1317754D FR1317754A (en) 1961-03-17
GB9852/61A GB935710A (en) 1961-03-17 1961-03-17 Improvements in controlled semiconductor rectifiers
DEA39725A DE1209207B (en) 1961-03-17 1962-03-16 Controllable semiconductor rectifier with an npnp semiconductor body
GB541/64A GB987169A (en) 1961-03-17 1964-01-06 Improvements relating to semi-conductor controlled rectifiers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9852/61A GB935710A (en) 1961-03-17 1961-03-17 Improvements in controlled semiconductor rectifiers
GB541/64A GB987169A (en) 1961-03-17 1964-01-06 Improvements relating to semi-conductor controlled rectifiers

Publications (1)

Publication Number Publication Date
GB935710A true GB935710A (en) 1963-09-04

Family

ID=26236007

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9852/61A Expired GB935710A (en) 1961-03-17 1961-03-17 Improvements in controlled semiconductor rectifiers
GB541/64A Expired GB987169A (en) 1961-03-17 1964-01-06 Improvements relating to semi-conductor controlled rectifiers

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB541/64A Expired GB987169A (en) 1961-03-17 1964-01-06 Improvements relating to semi-conductor controlled rectifiers

Country Status (3)

Country Link
DE (1) DE1209207B (en)
FR (1) FR1317754A (en)
GB (2) GB935710A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1281036B (en) * 1965-07-31 1968-10-24 Telefunken Patent Transistor and process for its manufacture
DE1289195B (en) * 1964-06-23 1969-02-13 Itt Ind Gmbh Deutsche Flat transistor with a recessed base zone
US3577046A (en) * 1969-03-21 1971-05-04 Gen Electric Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon
US3579060A (en) * 1969-03-21 1971-05-18 Gen Electric Thyristor with improved current and voltage handling characteristics
DE1297239C2 (en) * 1964-11-11 1975-07-17 Deutsche Itt Industries Gmbh, 7800 Freiburg POWER TRANSISTOR
US3964090A (en) * 1971-12-24 1976-06-15 Semikron Gesellschaft Fur Gleichrichterbau Und Elektronid M.B.H. Semiconductor controlled rectifier
US4024568A (en) * 1974-09-27 1977-05-17 Hitachi, Ltd. Transistor with base/emitter encirclement configuration
US4079409A (en) * 1973-11-27 1978-03-14 Licentia Patent-Verwaltungs G.M.B.H. Thyristor with pressure contacting
US4460913A (en) * 1981-10-30 1984-07-17 Rca Corporation Fast switching transistor
US4477826A (en) * 1979-07-04 1984-10-16 Westinghouse Brake & Signal Co. Ltd. Arrangement for aligning and attaching a shim to a semiconductor element
US4584595A (en) * 1985-02-07 1986-04-22 Reliance Electric Company Arrangement of field effect transistors for operation in the switched mode at high frequency

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609476A (en) * 1970-06-26 1971-09-28 Gen Electric Interdigitated structures for gate turnoff thyristors and for transistors
DE2902224A1 (en) * 1979-01-20 1980-07-24 Bbc Brown Boveri & Cie CONTACT SYSTEM FOR PERFORMANCE SEMICONDUCTOR COMPONENTS
DE3230760A1 (en) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München SWITCHABLE THYRISTOR

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2989426A (en) * 1957-06-06 1961-06-20 Ibm Method of transistor manufacture
DE1132247B (en) * 1959-01-30 1962-06-28 Siemens Ag Controlled four-layer triode with four semiconductor layers of alternating conductivity type

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1289195B (en) * 1964-06-23 1969-02-13 Itt Ind Gmbh Deutsche Flat transistor with a recessed base zone
DE1297239C2 (en) * 1964-11-11 1975-07-17 Deutsche Itt Industries Gmbh, 7800 Freiburg POWER TRANSISTOR
DE1297239B (en) * 1964-11-11 1975-07-17
DE1281036B (en) * 1965-07-31 1968-10-24 Telefunken Patent Transistor and process for its manufacture
US3577046A (en) * 1969-03-21 1971-05-04 Gen Electric Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon
US3579060A (en) * 1969-03-21 1971-05-18 Gen Electric Thyristor with improved current and voltage handling characteristics
US3964090A (en) * 1971-12-24 1976-06-15 Semikron Gesellschaft Fur Gleichrichterbau Und Elektronid M.B.H. Semiconductor controlled rectifier
US4079409A (en) * 1973-11-27 1978-03-14 Licentia Patent-Verwaltungs G.M.B.H. Thyristor with pressure contacting
US4024568A (en) * 1974-09-27 1977-05-17 Hitachi, Ltd. Transistor with base/emitter encirclement configuration
US4477826A (en) * 1979-07-04 1984-10-16 Westinghouse Brake & Signal Co. Ltd. Arrangement for aligning and attaching a shim to a semiconductor element
US4460913A (en) * 1981-10-30 1984-07-17 Rca Corporation Fast switching transistor
US4584595A (en) * 1985-02-07 1986-04-22 Reliance Electric Company Arrangement of field effect transistors for operation in the switched mode at high frequency

Also Published As

Publication number Publication date
GB987169A (en) 1965-03-24
FR1317754A (en) 1963-05-08
DE1209207B (en) 1966-01-20

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