FR1317754A - - Google Patents
Info
- Publication number
- FR1317754A FR1317754A FR1317754DA FR1317754A FR 1317754 A FR1317754 A FR 1317754A FR 1317754D A FR1317754D A FR 1317754DA FR 1317754 A FR1317754 A FR 1317754A
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/233—Cathode or anode electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Electron Sources, Ion Sources (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9852/61A GB935710A (en) | 1961-03-17 | 1961-03-17 | Improvements in controlled semiconductor rectifiers |
GB541/64A GB987169A (en) | 1961-03-17 | 1964-01-06 | Improvements relating to semi-conductor controlled rectifiers |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1317754A true FR1317754A (fr) | 1963-05-08 |
Family
ID=26236007
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1317754D Expired FR1317754A (fr) | 1961-03-17 |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1209207B (fr) |
FR (1) | FR1317754A (fr) |
GB (2) | GB935710A (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1289195B (de) * | 1964-06-23 | 1969-02-13 | Itt Ind Gmbh Deutsche | Flaechentransistor mit einer eingelassenen Basiszone |
DE1297239C2 (de) * | 1964-11-11 | 1975-07-17 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Leistungstransistor |
DE1281036B (de) * | 1965-07-31 | 1968-10-24 | Telefunken Patent | Transistor und Verfahren zu seiner Herstellung |
US3579060A (en) * | 1969-03-21 | 1971-05-18 | Gen Electric | Thyristor with improved current and voltage handling characteristics |
US3577046A (en) * | 1969-03-21 | 1971-05-04 | Gen Electric | Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon |
US3609476A (en) * | 1970-06-26 | 1971-09-28 | Gen Electric | Interdigitated structures for gate turnoff thyristors and for transistors |
US3964090A (en) * | 1971-12-24 | 1976-06-15 | Semikron Gesellschaft Fur Gleichrichterbau Und Elektronid M.B.H. | Semiconductor controlled rectifier |
US4079409A (en) * | 1973-11-27 | 1978-03-14 | Licentia Patent-Verwaltungs G.M.B.H. | Thyristor with pressure contacting |
JPS5138879A (fr) * | 1974-09-27 | 1976-03-31 | Hitachi Ltd | |
DE2902224A1 (de) * | 1979-01-20 | 1980-07-24 | Bbc Brown Boveri & Cie | Kontaktsystem fuer leistungs-halbleiterbauelemente |
DE3064121D1 (en) * | 1979-07-04 | 1983-08-18 | Westinghouse Brake & Signal | Semiconductor contact shim, attachment method and semiconductor device including a contact shim |
US4460913A (en) * | 1981-10-30 | 1984-07-17 | Rca Corporation | Fast switching transistor |
DE3230760A1 (de) * | 1982-08-18 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Abschaltbarer thyristor |
US4584595A (en) * | 1985-02-07 | 1986-04-22 | Reliance Electric Company | Arrangement of field effect transistors for operation in the switched mode at high frequency |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2989426A (en) * | 1957-06-06 | 1961-06-20 | Ibm | Method of transistor manufacture |
DE1132247B (de) * | 1959-01-30 | 1962-06-28 | Siemens Ag | Gesteuerte Vierschichtentriode mit vier Halbleiterschichten abwechselnden Leitfaehigkeitstyps |
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0
- FR FR1317754D patent/FR1317754A/fr not_active Expired
-
1961
- 1961-03-17 GB GB9852/61A patent/GB935710A/en not_active Expired
-
1962
- 1962-03-16 DE DEA39725A patent/DE1209207B/de active Pending
-
1964
- 1964-01-06 GB GB541/64A patent/GB987169A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB987169A (en) | 1965-03-24 |
GB935710A (en) | 1963-09-04 |
DE1209207B (de) | 1966-01-20 |