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FR1317754A - - Google Patents

Info

Publication number
FR1317754A
FR1317754A FR1317754DA FR1317754A FR 1317754 A FR1317754 A FR 1317754A FR 1317754D A FR1317754D A FR 1317754DA FR 1317754 A FR1317754 A FR 1317754A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Application granted granted Critical
Publication of FR1317754A publication Critical patent/FR1317754A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/60Gate-turn-off devices 
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148Cathode regions of thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/233Cathode or anode electrodes for thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4918Disposition being disposed on at least two different sides of the body, e.g. dual array
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Die Bonding (AREA)
FR1317754D 1961-03-17 Expired FR1317754A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9852/61A GB935710A (en) 1961-03-17 1961-03-17 Improvements in controlled semiconductor rectifiers
GB541/64A GB987169A (en) 1961-03-17 1964-01-06 Improvements relating to semi-conductor controlled rectifiers

Publications (1)

Publication Number Publication Date
FR1317754A true FR1317754A (fr) 1963-05-08

Family

ID=26236007

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1317754D Expired FR1317754A (fr) 1961-03-17

Country Status (3)

Country Link
DE (1) DE1209207B (fr)
FR (1) FR1317754A (fr)
GB (2) GB935710A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1289195B (de) * 1964-06-23 1969-02-13 Itt Ind Gmbh Deutsche Flaechentransistor mit einer eingelassenen Basiszone
DE1297239C2 (de) * 1964-11-11 1975-07-17 Deutsche Itt Industries Gmbh, 7800 Freiburg Leistungstransistor
DE1281036B (de) * 1965-07-31 1968-10-24 Telefunken Patent Transistor und Verfahren zu seiner Herstellung
US3579060A (en) * 1969-03-21 1971-05-18 Gen Electric Thyristor with improved current and voltage handling characteristics
US3577046A (en) * 1969-03-21 1971-05-04 Gen Electric Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon
US3609476A (en) * 1970-06-26 1971-09-28 Gen Electric Interdigitated structures for gate turnoff thyristors and for transistors
US3964090A (en) * 1971-12-24 1976-06-15 Semikron Gesellschaft Fur Gleichrichterbau Und Elektronid M.B.H. Semiconductor controlled rectifier
US4079409A (en) * 1973-11-27 1978-03-14 Licentia Patent-Verwaltungs G.M.B.H. Thyristor with pressure contacting
JPS5138879A (fr) * 1974-09-27 1976-03-31 Hitachi Ltd
DE2902224A1 (de) * 1979-01-20 1980-07-24 Bbc Brown Boveri & Cie Kontaktsystem fuer leistungs-halbleiterbauelemente
DE3064121D1 (en) * 1979-07-04 1983-08-18 Westinghouse Brake & Signal Semiconductor contact shim, attachment method and semiconductor device including a contact shim
US4460913A (en) * 1981-10-30 1984-07-17 Rca Corporation Fast switching transistor
DE3230760A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Abschaltbarer thyristor
US4584595A (en) * 1985-02-07 1986-04-22 Reliance Electric Company Arrangement of field effect transistors for operation in the switched mode at high frequency

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2989426A (en) * 1957-06-06 1961-06-20 Ibm Method of transistor manufacture
DE1132247B (de) * 1959-01-30 1962-06-28 Siemens Ag Gesteuerte Vierschichtentriode mit vier Halbleiterschichten abwechselnden Leitfaehigkeitstyps

Also Published As

Publication number Publication date
GB987169A (en) 1965-03-24
GB935710A (en) 1963-09-04
DE1209207B (de) 1966-01-20

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