DE1197988B - Semiconducting electrode system - Google Patents
Semiconducting electrode systemInfo
- Publication number
- DE1197988B DE1197988B DEN12773A DEN0012773A DE1197988B DE 1197988 B DE1197988 B DE 1197988B DE N12773 A DEN12773 A DE N12773A DE N0012773 A DEN0012773 A DE N0012773A DE 1197988 B DE1197988 B DE 1197988B
- Authority
- DE
- Germany
- Prior art keywords
- crystal
- resistance
- electrode system
- semiconducting
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims description 14
- 230000005518 electrochemistry Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thermistors And Varistors (AREA)
Description
BUNDESREPUBLIK DEUTSCHLANDFEDERAL REPUBLIC OF GERMANY
DEUTSCHESGERMAN
PATENTAMTPATENT OFFICE
AUSLEGESCHRIFTEDITORIAL
Int. CL:Int. CL:
HOIlHOIl
Deutsche KL: 21g-11/02German KL: 21g-11/02
Nummer: 1197 988Number: 1197 988
Aktenzeichen: N12773 VIII c/21 gFile number: N12773 VIII c / 21 g
Anmeldetag: 26. September 1956Filing date: September 26, 1956
Auslegetag: 5. August 1965Opening day: August 5, 1965
Die Erfindung bezieht sich auf ein halbleitendes Elektrodensystem, welches aus einem halbleitenden Kristall, einer oder mehreren an diesem Körper befestigten Elektroden und wenigstens einer Stromzuleitung besteht, die einerseits mit einer solchen Elektrode und andererseits mit einem Anschlußkontakt verbunden ist. Dieser Anschlußkontakt ist dazu bestimmt, an einer äußeren Leitung befestigt zu werden und wird gewöhnlich einen Teil einer das Elektrodensystem enthaltenden Hülle bilden.The invention relates to a semiconducting electrode system, which consists of a semiconducting Crystal, one or more electrodes attached to this body and at least one power supply line consists on the one hand with such an electrode and on the other hand with a connection contact connected is. This connection contact is intended to be attached to an external line and will usually form part of an enclosure containing the electrode system.
Es wurde festgestellt, daß solche Elektrodensysteme, insbesondere Dioden, durch elektrische Überlastung leicht beschädigt werden können, z. B. beim Einschalten, infolge des Umstandes, daß der Widerstand des Kristalls selbst besonders niedrig, insbesondere viel niedriger als der von Selen- und ähnlichen Grenzschichtgleichrichtern gleicher Leistung ist. Nach der Erfindung wird diese Gefahr einer Überlastung wesentlich herabgesetzt, indem wenigstens eine Stromzuleitung einen Widerstand besitzt, der von gleicher Größenordnung wie der des Kristalls in Vorwärtsrichtung ist. Der Widerstand soll wenigstens ein Drittel des Widerstandes des Kristalls betragen. Ein günstiger Wert für viele Anwendungen ist ein Widerstand gleich dem des as Kristalls.It has been found that such electrode systems, especially diodes, by electrical Overload can easily be damaged, e.g. B. when switching on, due to the fact that the Resistance of the crystal itself is particularly low, in particular much lower than that of selenium and similar boundary layer rectifiers of the same power. According to the invention, this risk an overload is significantly reduced by adding a resistor to at least one power supply line which is of the same order of magnitude as that of the crystal in the forward direction. The resistance should be at least a third of the resistance of the crystal. A good value for many applications is a resistance equal to that of the as crystal.
Unter dem Widerstand des Kristalls ist hier der Widerstand zu verstehen, statisch gemessen in der Vorwärtsrichtung bis zur anderen Elektrode oder bis zu derjenigen der anderen Elektroden, die den kleinsten Widerstand ergibt.The resistance of the crystal is to be understood here as the resistance, measured statically in the Forward direction to the other electrode or to that of the other electrodes that have the results in the smallest resistance.
Der Vollständigkeit halber sei bemerkt, daß es bei einer Einrichtung zum Schutz empfindlicher elektrischer Apparate bekannt ist, parallel zu den Ausgangsklemmen einer Gleichrichteranordnung eine in Sperrichtung eingestellte Diode einzuschalten, die beim Überschreiten eines Grenzwertes der Ausgangsspannung leitend wird und der zum Schutz gegen Überlastung ein Widerstand vorgeschaltet ist. Um eine Strombegrenzung in dem an der vollen Gleichspannung liegenden Querzweig zu bewirken, muß dieser Widerstand einen verhältnismäßig großen Wert haben; ein solcher Zweig wäre daher für eine Nutzgleichrichtung nicht geeignet. Dieser Widerstand muß im übrigen verhältnismäßig viel Energie aufnehmen, so daß ein konstruktiver Zusammenbau der Diode nicht ohne weiteres möglich ist. Weiter ist es an sich bekannt, die Zuleitung einer Punktkontaktdiode aus Widerstandsmaterial herzustellen. Dabei wird dieses Material lediglich aus mechanischen Gründen verwendet. Die dabei benutzten Abmessungen führen nicht zu einem Widerstand, Halbleitendes ElektrodensystemFor the sake of completeness, it should be noted that a device for the protection of sensitive electrical Apparatus is known to have a rectifier arrangement in parallel with the output terminals to switch on the diode set in the reverse direction when a limit value of the output voltage is exceeded becomes conductive and a resistor is connected upstream to protect against overload. Around to bring about a current limitation in the shunt arm lying at the full DC voltage, must this resistance has a comparatively great value; such a branch would therefore be for a Useful rectification not suitable. In addition, this resistance requires a relatively large amount of energy record, so that a structural assembly of the diode is not easily possible. Further it is known per se to produce the lead of a point contact diode from resistance material. This material is only used for mechanical reasons. The ones used Dimensions do not result in resistance, semiconductors of the electrode system
Anmelder:Applicant:
N. V. Philips' Gloeilampenfabrieken,N. V. Philips' Gloeilampenfabrieken,
Eindhoven (Niederlande)Eindhoven (Netherlands)
Vertreter:Representative:
Dr. rer. nat. P. Roßbach, Patentanwalt,Dr. rer. nat. P. Roßbach, patent attorney,
Hamburg 1, Mönckebergstr. 7Hamburg 1, Mönckebergstr. 7th
Als Erfinder benannt:Named as inventor:
Hans Karl Becherer, HamburgHans Karl Becherer, Hamburg
Beanspruchte Priorität:Claimed priority:
Niederlande vom 30. September 1955 (200 897)Netherlands of September 30, 1955 (200 897)
der gegenüber dem normalen Durchschlagswiderstand der Diode eine Schutzwirkung ausüben könnte, zumal Punktkontaktdioden ohnehin einen beträchtlichen Widerstand in Durchlaßrichtung aufweisen. Erst die der Erfindung zugrunde liegende Erkenntnis führt dazu, die Elektrodenzuleitung in besonderer Weise so auszubilden, daß eine Überlastung vermieden wird.which could have a protective effect against the normal breakdown resistance of the diode, especially since point contact diodes have a considerable resistance in the forward direction anyway. Only the knowledge on which the invention is based leads to the electrode lead in particular Way to train so that overload is avoided.
Die Erfindung wird an Hand eines durch eine Zeichnung verdeutlichten Ausführungsbeispiels näher beschrieben.The invention is explained in more detail using an exemplary embodiment illustrated by a drawing described.
Die Figur zeigt einen schematischen Schnitt einer Kristalldiode in einer Hülle. Das System besteht aus einem Germaniumeinkristall 1 mit n-Leitfähigkeit in Form einer Scheibe mit einer Stärke von 0,5 mm und einer Oberfläche von 3 · 3 mm. Der spezifische Widerstand beträgt 15 Ohm ■ cm. Der Kristall ist mittels einer kleinen 10% Antimon enthaltenden Zinnmenge 2 auf einem vergoldeten Molybdänplättchen 3 festgelötet, welches auf dem Boden 4 der Hülle des Systems befestigt ist. Die Hülle besteht ferner aus einer Kappe 5, die den Boden 4 umklemmt und außerdem von einem umgebördelten Rand 6 dieses Bodens umfaßt wird. Eine Aluminiumscheibe 7 erhöht die Abdichtung. In der Oberseite der Kappe 5 ist ein rohrförmiger Anschlußkontakt 8 mittels einer Glasperle 9 isoliert angeordnet. The figure shows a schematic section of a crystal diode in an envelope. The system exists of a germanium single crystal 1 with n-conductivity in the form of a disk with a thickness of 0.5 mm and a surface area of 3 x 3 mm. The specific resistance is 15 Ohm ■ cm. Of the Crystal is gold-plated by means of a small amount of tin containing 10% antimony 2 Soldered molybdenum plate 3, which is attached to the bottom 4 of the shell of the system. the Sheath also consists of a cap 5, which clamps around the bottom 4 and also of a flanged Edge 6 of this floor is covered. An aluminum washer 7 increases the seal. In the On the top of the cap 5, a tubular connection contact 8 is arranged in an insulated manner by means of a glass bead 9.
Auf dem Germaniumkristall 1 ist eine aus Indium bestehende Elektrode 10 in bekannter Weise aufgeschmolzen. Zwischen der Elektrode 10 und dem An-An electrode 10 made of indium is melted on the germanium crystal 1 in a known manner. Between the electrode 10 and the connection
509 629/316509 629/316
schlußkontakt befindet sich eine Stromzuleitung 11, die z.B. aus einer Legierung von 20% Chrom und 80°/o Nickel besteht. Diese Leitung ist im Anschlußkontakt 8 durch Lötmaterial 12 luftdicht befestigt.Closing contact is a power supply line 11, which, for example, made of an alloy of 20% chromium and 80 ° / o consists of nickel. This line is in the connection contact 8 secured airtight by soldering material 12.
In diesem Falle hat der Widerstand des Kristalls, in der Vorwärtsrichtung zwischen dem Molybdänplättchen3 und der Elektrode 10 gemessen, einen Wert von 0,15 Ohm. Für den Widerstand des Drahtes 11 wurde derselbe Wert gewählt.In this case the resistance of the crystal, in the forward direction between the molybdenum platelet, is 3 and the electrode 10 measured a value of 0.15 ohms. The same value was chosen for the resistance of the wire 11.
Claims (2)
Deutsche Patentanmeldung ρ 8939 VIIIb/21cDConsidered publications:
German patent application ρ 8939 VIIIb / 21cD
USA.-Patentschrift Nr. 2588 956;
»Zeitschrift für Elektrochemie«, Bd. 58 (1954),(announced 5/31/1951);
U.S. Patent No. 2588,956;
"Zeitschrift für Elektrochemie", Vol. 58 (1954),
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL200897 | 1955-09-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1197988B true DE1197988B (en) | 1965-08-05 |
| DE1197988C2 DE1197988C2 (en) | 1966-02-24 |
Family
ID=19750725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN12773A Granted DE1197988B (en) | 1955-09-30 | 1956-09-26 | Semiconducting electrode system |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1197988B (en) |
| FR (1) | FR1157698A (en) |
| GB (1) | GB808451A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1238102B (en) * | 1960-01-20 | 1967-04-06 | Nippon Electric Co | Semiconductor rectifier |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2588956A (en) * | 1946-07-31 | 1952-03-11 | Gen Electric Co Ltd | Crystal rectifier |
-
1956
- 1956-09-26 DE DEN12773A patent/DE1197988B/en active Granted
- 1956-09-27 GB GB29559/56A patent/GB808451A/en not_active Expired
- 1956-09-28 FR FR1157698D patent/FR1157698A/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2588956A (en) * | 1946-07-31 | 1952-03-11 | Gen Electric Co Ltd | Crystal rectifier |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1157698A (en) | 1958-06-02 |
| DE1197988C2 (en) | 1966-02-24 |
| GB808451A (en) | 1959-02-04 |
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