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GB9020502D0 - Method for manufacturing a semiconductor device - Google Patents

Method for manufacturing a semiconductor device

Info

Publication number
GB9020502D0
GB9020502D0 GB909020502A GB9020502A GB9020502D0 GB 9020502 D0 GB9020502 D0 GB 9020502D0 GB 909020502 A GB909020502 A GB 909020502A GB 9020502 A GB9020502 A GB 9020502A GB 9020502 D0 GB9020502 D0 GB 9020502D0
Authority
GB
United Kingdom
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB909020502A
Other versions
GB2244375A (en
GB2244375B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9020502D0 publication Critical patent/GB9020502D0/en
Publication of GB2244375A publication Critical patent/GB2244375A/en
Application granted granted Critical
Publication of GB2244375B publication Critical patent/GB2244375B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/01Manufacture or treatment
    • H10B12/02Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03Making the capacitor or connections thereto
    • H10B12/033Making the capacitor or connections thereto the capacitor extending over the transistor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
GB9020502A 1990-05-21 1990-09-20 Method for manufacturing a semiconductor device Expired - Lifetime GB2244375B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900007268A KR930000718B1 (en) 1990-05-21 1990-05-21 Manufacturing Method of Semiconductor Device

Publications (3)

Publication Number Publication Date
GB9020502D0 true GB9020502D0 (en) 1990-10-31
GB2244375A GB2244375A (en) 1991-11-27
GB2244375B GB2244375B (en) 1994-06-15

Family

ID=19299238

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9020502A Expired - Lifetime GB2244375B (en) 1990-05-21 1990-09-20 Method for manufacturing a semiconductor device

Country Status (6)

Country Link
JP (1) JPH0724285B2 (en)
KR (1) KR930000718B1 (en)
DE (1) DE4031414A1 (en)
FR (1) FR2662302B1 (en)
GB (1) GB2244375B (en)
IT (1) IT1243103B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930006732B1 (en) * 1991-05-08 1993-07-23 재단법인 한국전자통신연구소 Semiconductor substrate with embedded structure having electrical characteristics and manufacturing method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120070A (en) * 1985-11-20 1987-06-01 Toshiba Corp Semiconductor memory
JPH0736437B2 (en) * 1985-11-29 1995-04-19 株式会社日立製作所 Method of manufacturing semiconductor memory
JP2569048B2 (en) * 1987-05-27 1997-01-08 株式会社日立製作所 Method for manufacturing semiconductor memory
EP0750347B1 (en) * 1987-06-17 2002-05-08 Fujitsu Limited Dynamic random access memory device and method of producing the same
JPH01154551A (en) * 1987-12-11 1989-06-16 Oki Electric Ind Co Ltd Semiconductor storage integrated circuit device and manufacture thereof
KR910010167B1 (en) * 1988-06-07 1991-12-17 삼성전자 주식회사 Stacked Capacitor DRAM Cells and Manufacturing Method Thereof
US5116776A (en) * 1989-11-30 1992-05-26 Sgs-Thomson Microelectronics, Inc. Method of making a stacked copacitor for dram cell
KR920010204B1 (en) * 1989-12-02 1992-11-21 삼성전자 주식회사 Ultra-Integrated DRAM Cell and Manufacturing Method Thereof

Also Published As

Publication number Publication date
JPH0424961A (en) 1992-01-28
IT9021550A1 (en) 1992-03-24
KR910020901A (en) 1991-12-20
DE4031414A1 (en) 1991-11-28
GB2244375A (en) 1991-11-27
IT1243103B (en) 1994-05-24
JPH0724285B2 (en) 1995-03-15
KR930000718B1 (en) 1993-01-30
FR2662302A1 (en) 1991-11-22
FR2662302B1 (en) 1992-08-14
IT9021550A0 (en) 1990-09-24
GB2244375B (en) 1994-06-15

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20100919