GB860453A - Improvements in or relating to p-n-junction rectifiers - Google Patents
Improvements in or relating to p-n-junction rectifiersInfo
- Publication number
- GB860453A GB860453A GB3160459A GB3160459A GB860453A GB 860453 A GB860453 A GB 860453A GB 3160459 A GB3160459 A GB 3160459A GB 3160459 A GB3160459 A GB 3160459A GB 860453 A GB860453 A GB 860453A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- sept
- protected
- mica
- lacquer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004922 lacquer Substances 0.000 abstract 2
- 239000010445 mica Substances 0.000 abstract 2
- 229910052618 mica group Inorganic materials 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000010425 asbestos Substances 0.000 abstract 1
- 239000004519 grease Substances 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 229910052895 riebeckite Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Organic Insulating Materials (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
860,453. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. Sept. 16, 1959 [Sept. 26, 1958], No. 31604/59. Class 37. The p-n junction of a rectifier is protected from moisture by an insulating lacquer-containing, finely divided fibrous or flaky insulating material. In the device shown, the junction formed by alloying a gold antimony electrode 4 to a p-type silicon body 2 is mounted on a molybdenum plate 1 by an aluminium layer 3 and is protected by a lacquer 5 containing flaky mica. Fibrous asbestos may be used instead of mica. A high vacuum or silicone grease may provide additional protection.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES60003A DE1078238B (en) | 1958-09-26 | 1958-09-26 | Rectifier arrangement with pn junction and method for its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB860453A true GB860453A (en) | 1961-02-08 |
Family
ID=7493767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3160459A Expired GB860453A (en) | 1958-09-26 | 1959-09-16 | Improvements in or relating to p-n-junction rectifiers |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH373472A (en) |
| DE (1) | DE1078238B (en) |
| FR (1) | FR1235004A (en) |
| GB (1) | GB860453A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1246886B (en) * | 1960-07-30 | 1967-08-10 | Elektronik M B H | Process for stabilizing and improving the blocking properties of semiconductor components |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE562973A (en) * | 1956-12-06 | 1900-01-01 |
-
1958
- 1958-09-26 DE DES60003A patent/DE1078238B/en active Pending
-
1959
- 1959-09-07 FR FR804496A patent/FR1235004A/en not_active Expired
- 1959-09-16 GB GB3160459A patent/GB860453A/en not_active Expired
- 1959-09-18 CH CH7837159A patent/CH373472A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR1235004A (en) | 1960-07-01 |
| DE1078238B (en) | 1960-03-24 |
| CH373472A (en) | 1963-11-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB943860A (en) | Semi-conductor device | |
| GB783647A (en) | Improvements in or relating to barrier-layer systems | |
| GB905553A (en) | Improvements in or relating to the production of semi-conductor devices | |
| GB935710A (en) | Improvements in controlled semiconductor rectifiers | |
| GB970895A (en) | Semi-conductor arrangements enclosed in housings | |
| GB860453A (en) | Improvements in or relating to p-n-junction rectifiers | |
| GB896717A (en) | Semiconductor diode | |
| GB1088637A (en) | Four layer semiconductor switching devices having a shorted emitter | |
| GB984141A (en) | Improvements in or relating to methods of alloying to semiconductor bodies | |
| JPS57210646A (en) | Resin-sealed semiconductor device | |
| GB926423A (en) | Improvements in or relating to semiconductor rectifiers | |
| GB1079309A (en) | Semiconductor rectifiers | |
| GB930352A (en) | Improvements in or relating to semi-conductor arrangements | |
| GB1202342A (en) | Selenium rectifiers | |
| GB965289A (en) | Diffused junction type silicon rectifier units | |
| GB916379A (en) | Improvements in and relating to semiconductor junction units | |
| GB983623A (en) | Improvements relating to semi-conductor devices | |
| GB1071208A (en) | An improved semiconductor device suitable for use as a high voltage rectifier | |
| GB1266431A (en) | ||
| GB851751A (en) | Improvements in and relating to the construction of semi-conductor diodes | |
| GB1028715A (en) | Improvements in semi-conductors | |
| GB592191A (en) | Improvements in and relating to the electro-forming of rectifiers | |
| GB966416A (en) | Improvements in or relating to semiconductors | |
| GB819656A (en) | Improvements in or relating to crystal diodes | |
| GB889753A (en) | A process for applying an electrode to a semi-conductor body |