GB1266431A - - Google Patents
Info
- Publication number
- GB1266431A GB1266431A GB1266431DA GB1266431A GB 1266431 A GB1266431 A GB 1266431A GB 1266431D A GB1266431D A GB 1266431DA GB 1266431 A GB1266431 A GB 1266431A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- depletion layer
- detector
- conductor
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04G—SCAFFOLDING; FORMS; SHUTTERING; BUILDING IMPLEMENTS OR AIDS, OR THEIR USE; HANDLING BUILDING MATERIALS ON THE SITE; REPAIRING, BREAKING-UP OR OTHER WORK ON EXISTING BUILDINGS
- E04G11/00—Forms, shutterings, or falsework for making walls, floors, ceilings, or roofs
- E04G11/06—Forms, shutterings, or falsework for making walls, floors, ceilings, or roofs for walls, e.g. curved end panels for wall shutterings; filler elements for wall shutterings; shutterings for vertical ducts
- E04G11/08—Forms, which are completely dismantled after setting of the concrete and re-built for next pouring
- E04G11/12—Forms, which are completely dismantled after setting of the concrete and re-built for next pouring of elements and beams which are mounted during erection of the shuttering to brace or couple the elements
-
- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04G—SCAFFOLDING; FORMS; SHUTTERING; BUILDING IMPLEMENTS OR AIDS, OR THEIR USE; HANDLING BUILDING MATERIALS ON THE SITE; REPAIRING, BREAKING-UP OR OTHER WORK ON EXISTING BUILDINGS
- E04G11/00—Forms, shutterings, or falsework for making walls, floors, ceilings, or roofs
- E04G11/36—Forms, shutterings, or falsework for making walls, floors, ceilings, or roofs for floors, ceilings, or roofs of plane or curved surfaces end formpanels for floor shutterings
- E04G11/48—Supporting structures for shutterings or frames for floors or roofs
- E04G11/50—Girders, beams, or the like as supporting members for forms
- E04G11/54—Girders, beams, or the like as supporting members for forms of extensible type, with or without adjustable supporting shoes, fishplates, or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Mechanical Engineering (AREA)
- Civil Engineering (AREA)
- Structural Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
1,266,431. Semi-conductor electron detector. SIEMENS A.G. 28 May, 1969 [30 May, 1968], No. 27088/69. Heading H1K. A detector of low energy electrons has a PN- junction-containing high-resistivity silicon body H provided with a gold contact G and a lightimpermeable but electron-permeable aluminium contact A. The extent of the depletion layer is small in the non-biased condition but under appropriate reverse bias the depletion layer may extend almost to the aluminized surface O 1 upon which electrons will be incident. The semi-conductor body is surrounded by an insulating ring J and placed in a metal housing M. Bias is applied across K 2 , K 3 and an output taken from K 1 , K 2
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH804768 | 1968-05-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1266431A true GB1266431A (en) | 1972-03-08 |
Family
ID=4334318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1266431D Expired GB1266431A (en) | 1968-05-30 | 1969-05-28 |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1925971A1 (en) |
FR (1) | FR2009972A1 (en) |
GB (1) | GB1266431A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2345188A (en) * | 1998-12-22 | 2000-06-28 | Hitachi Ltd | Semiconductor radiation detector |
-
1969
- 1969-05-21 DE DE19691925971 patent/DE1925971A1/en active Pending
- 1969-05-28 GB GB1266431D patent/GB1266431A/en not_active Expired
- 1969-05-28 FR FR6917360A patent/FR2009972A1/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2345188A (en) * | 1998-12-22 | 2000-06-28 | Hitachi Ltd | Semiconductor radiation detector |
GB2345188B (en) * | 1998-12-22 | 2001-02-14 | Hitachi Ltd | Semiconductor radiation detector and manufacture thereof |
US6486476B1 (en) | 1998-12-22 | 2002-11-26 | Hitachi, Ltd. | Semiconductor radiation detector and manufacture thereof |
Also Published As
Publication number | Publication date |
---|---|
FR2009972B1 (en) | 1973-12-21 |
DE1925971A1 (en) | 1970-01-08 |
FR2009972A1 (en) | 1970-02-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PLNP | Patent lapsed through nonpayment of renewal fees |