GB579218A - Rectifiers and method of making same - Google Patents
Rectifiers and method of making sameInfo
- Publication number
- GB579218A GB579218A GB11076/44A GB1107644A GB579218A GB 579218 A GB579218 A GB 579218A GB 11076/44 A GB11076/44 A GB 11076/44A GB 1107644 A GB1107644 A GB 1107644A GB 579218 A GB579218 A GB 579218A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wire
- passed
- current
- wires
- selenium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 229910052711 selenium Inorganic materials 0.000 abstract 2
- 239000011669 selenium Substances 0.000 abstract 2
- 229910001152 Bi alloy Inorganic materials 0.000 abstract 1
- 229910000925 Cd alloy Inorganic materials 0.000 abstract 1
- 229910001128 Sn alloy Inorganic materials 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Current Or Voltage (AREA)
Abstract
579,218. Asymmetrically-conducting resistances. STANDARD TELEPHONES & CABLES, Ltd. June 9, 1944, No. 11076. Convention date, July 9, 1943. [Class 37] A low current rectifier, as for a meter, comprises a pair of resilient wires 5, 6 which pass through, and are supported by, the walls of a container 3, 4 at points 7, 8, 9, the end 12 of the wire 6 being unattached. Current is passed through the wire 6 to effect the necessary heat treatment of the selenium coating provided thereon, the wires then being sprung into contact preferably at an angle of 90 degrees. A heating current is then passed through the wire 5, which has a suitable alloy coating of low melting point, e.g., an alloy of cadmium, tin and bismuth which melts and flows over the selenium layer on the wire 6 to form a junction.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US579218XA | 1943-07-09 | 1943-07-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB579218A true GB579218A (en) | 1946-07-26 |
Family
ID=22013571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB11076/44A Expired GB579218A (en) | 1943-07-09 | 1944-06-09 | Rectifiers and method of making same |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB579218A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1113524B (en) * | 1959-07-30 | 1961-09-07 | Standard Elektrik Lorenz Ag | Selenium rectifier |
DE1263197B (en) * | 1964-07-04 | 1968-03-14 | Danfoss As | Method for producing a solid-state electronic switching element without a barrier layer and an element produced therefrom |
DE1514364B1 (en) * | 1964-08-08 | 1969-12-11 | Rikagaku Kenkyusho | Active solid-state electronic component |
-
1944
- 1944-06-09 GB GB11076/44A patent/GB579218A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1113524B (en) * | 1959-07-30 | 1961-09-07 | Standard Elektrik Lorenz Ag | Selenium rectifier |
DE1263197B (en) * | 1964-07-04 | 1968-03-14 | Danfoss As | Method for producing a solid-state electronic switching element without a barrier layer and an element produced therefrom |
DE1514364B1 (en) * | 1964-08-08 | 1969-12-11 | Rikagaku Kenkyusho | Active solid-state electronic component |
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