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GB2244721B - Plasma processing apparatus - Google Patents

Plasma processing apparatus

Info

Publication number
GB2244721B
GB2244721B GB9109602A GB9109602A GB2244721B GB 2244721 B GB2244721 B GB 2244721B GB 9109602 A GB9109602 A GB 9109602A GB 9109602 A GB9109602 A GB 9109602A GB 2244721 B GB2244721 B GB 2244721B
Authority
GB
United Kingdom
Prior art keywords
processing apparatus
plasma processing
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9109602A
Other versions
GB9109602D0 (en
GB2244721A (en
Inventor
Rudolf August Herbert Heinecke
Geoffrey Alan Scarsbrook
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Publication of GB9109602D0 publication Critical patent/GB9109602D0/en
Publication of GB2244721A publication Critical patent/GB2244721A/en
Application granted granted Critical
Publication of GB2244721B publication Critical patent/GB2244721B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
GB9109602A 1990-05-03 1991-05-03 Plasma processing apparatus Expired - Fee Related GB2244721B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB909010000A GB9010000D0 (en) 1990-05-03 1990-05-03 Phosphide films

Publications (3)

Publication Number Publication Date
GB9109602D0 GB9109602D0 (en) 1991-06-26
GB2244721A GB2244721A (en) 1991-12-11
GB2244721B true GB2244721B (en) 1993-05-19

Family

ID=10675435

Family Applications (3)

Application Number Title Priority Date Filing Date
GB909010000A Pending GB9010000D0 (en) 1990-05-03 1990-05-03 Phosphide films
GB9109603A Expired - Fee Related GB2244285B (en) 1990-05-03 1991-05-03 Phosphide films
GB9109602A Expired - Fee Related GB2244721B (en) 1990-05-03 1991-05-03 Plasma processing apparatus

Family Applications Before (2)

Application Number Title Priority Date Filing Date
GB909010000A Pending GB9010000D0 (en) 1990-05-03 1990-05-03 Phosphide films
GB9109603A Expired - Fee Related GB2244285B (en) 1990-05-03 1991-05-03 Phosphide films

Country Status (1)

Country Link
GB (3) GB9010000D0 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9414905D0 (en) * 1994-07-23 1994-09-21 Barr & Stroud Ltd Protective coatings for optical components
US6182604B1 (en) 1999-10-27 2001-02-06 Varian Semiconductor Equipment Associates, Inc. Hollow cathode for plasma doping system
CN105714274A (en) * 2016-03-31 2016-06-29 成都西沃克真空科技有限公司 Plasma enhanced chemical vapor deposition equipment and film manufacturing method

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4287851A (en) * 1980-01-16 1981-09-08 Dozier Alfred R Mounting and excitation system for reaction in the plasma state
GB1598146A (en) * 1977-03-11 1981-09-16 Fujitsu Ltd Method and apparatus for plasma treatment of semiconductor materials
EP0115970A1 (en) * 1983-01-05 1984-08-15 Commissariat A L'energie Atomique Vessel for the processing and particularly etching of substrates by the reactive plasma method
US4637853A (en) * 1985-07-29 1987-01-20 International Business Machines Corporation Hollow cathode enhanced plasma for high rate reactive ion etching and deposition
US4661203A (en) * 1985-06-28 1987-04-28 Control Data Corporation Low defect etching of patterns using plasma-stencil mask
WO1988001435A1 (en) * 1986-08-13 1988-02-25 The Australian National University Improvements in reactive ion etching apparatus
GB2201162A (en) * 1987-02-20 1988-08-24 Asm Inc Electrode boat apparatus for plasma enhanced chemical vapour processing semiconductor wafers
US4910041A (en) * 1987-09-11 1990-03-20 Japan Synthetic Rubber Co., Ltd. Film formation process

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2105729B (en) * 1981-09-15 1985-06-12 Itt Ind Ltd Surface processing of a substrate material
AU553091B2 (en) * 1981-12-30 1986-07-03 Stauffer Chemical Company High phosphorus pholyphosphides
GB8431422D0 (en) * 1984-12-13 1985-01-23 Standard Telephones Cables Ltd Plasma reactor vessel
GB8821116D0 (en) * 1988-09-08 1989-11-08 Barr & Stroud Ltd Infra-red transmitting optical components and optical coatings therefor
US4837185A (en) * 1988-10-26 1989-06-06 Intel Corporation Pulsed dual radio frequency CVD process

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1598146A (en) * 1977-03-11 1981-09-16 Fujitsu Ltd Method and apparatus for plasma treatment of semiconductor materials
US4287851A (en) * 1980-01-16 1981-09-08 Dozier Alfred R Mounting and excitation system for reaction in the plasma state
EP0115970A1 (en) * 1983-01-05 1984-08-15 Commissariat A L'energie Atomique Vessel for the processing and particularly etching of substrates by the reactive plasma method
US4661203A (en) * 1985-06-28 1987-04-28 Control Data Corporation Low defect etching of patterns using plasma-stencil mask
US4637853A (en) * 1985-07-29 1987-01-20 International Business Machines Corporation Hollow cathode enhanced plasma for high rate reactive ion etching and deposition
WO1988001435A1 (en) * 1986-08-13 1988-02-25 The Australian National University Improvements in reactive ion etching apparatus
GB2201162A (en) * 1987-02-20 1988-08-24 Asm Inc Electrode boat apparatus for plasma enhanced chemical vapour processing semiconductor wafers
US4910041A (en) * 1987-09-11 1990-03-20 Japan Synthetic Rubber Co., Ltd. Film formation process

Also Published As

Publication number Publication date
GB9010000D0 (en) 1990-06-27
GB9109602D0 (en) 1991-06-26
GB9109603D0 (en) 1991-07-17
GB2244285B (en) 1994-01-26
GB2244285A (en) 1991-11-27
GB2244721A (en) 1991-12-11

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20050503