GB1347178A - Production of semiconductor arrangements - Google Patents
Production of semiconductor arrangementsInfo
- Publication number
- GB1347178A GB1347178A GB3816872A GB3816872A GB1347178A GB 1347178 A GB1347178 A GB 1347178A GB 3816872 A GB3816872 A GB 3816872A GB 3816872 A GB3816872 A GB 3816872A GB 1347178 A GB1347178 A GB 1347178A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- aug
- sio
- volume
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 abstract 3
- 239000010410 layer Substances 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 2
- 239000011261 inert gas Substances 0.000 abstract 2
- 239000012495 reaction gas Substances 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
Abstract
1347178 SiO 2 -Al 2 O 3 layer SIEMENS AG 16 Aug 1972 [17 Aug 1971] 38168/72 Heading C1A [Also in Division H1] A method of depositing a vitreous, homogeneous protective layer of Al 2 O 3 and SiO 2 on a semi-conductor surface comprises heating the surface to a temperature between 280 and 450 C. and directing a reaction gas flow of aluminium trimethyl, monosilane and in inert gas towards the surface, where it reacts with oxygen, to form the layer containing between 5 and 15 mol per cent of Al 2 O 3 . The reaction gas may have a flow rate in excess of 100 l/hr. and contain 5# by volume SiH 4 , 0À01 to 0À1# by volume of Al(CH 3 ) 3 , preferably 0À05#, all measured at NTP, the inert gas being argon. The thickness of the layer may be 8000- 10,000 .
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2141182A DE2141182A1 (en) | 1971-08-17 | 1971-08-17 | METHOD OF MANUFACTURING A SEMICONDUCTOR ARRANGEMENT |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1347178A true GB1347178A (en) | 1974-02-27 |
Family
ID=5816981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3816872A Expired GB1347178A (en) | 1971-08-17 | 1972-08-16 | Production of semiconductor arrangements |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS4830378A (en) |
| CH (1) | CH565450A5 (en) |
| DE (1) | DE2141182A1 (en) |
| FR (1) | FR2149485B1 (en) |
| GB (1) | GB1347178A (en) |
| IT (1) | IT963845B (en) |
| NL (1) | NL7209209A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008013529B4 (en) * | 2008-03-11 | 2016-12-15 | Krones Aktiengesellschaft | Method and device for controlling an interior treatment of a container |
-
1971
- 1971-08-17 DE DE2141182A patent/DE2141182A1/en active Pending
-
1972
- 1972-06-07 CH CH843572A patent/CH565450A5/xx not_active IP Right Cessation
- 1972-06-30 NL NL7209209A patent/NL7209209A/xx unknown
- 1972-08-09 IT IT28017/72A patent/IT963845B/en active
- 1972-08-16 FR FR7229316A patent/FR2149485B1/fr not_active Expired
- 1972-08-16 GB GB3816872A patent/GB1347178A/en not_active Expired
- 1972-08-17 JP JP47082418A patent/JPS4830378A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4830378A (en) | 1973-04-21 |
| CH565450A5 (en) | 1975-08-15 |
| FR2149485A1 (en) | 1973-03-30 |
| FR2149485B1 (en) | 1977-07-29 |
| DE2141182A1 (en) | 1973-02-22 |
| IT963845B (en) | 1974-01-21 |
| NL7209209A (en) | 1973-02-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1233908A (en) | ||
| ES8702870A1 (en) | Chemical vapor deposition of a reflective film on the bottom surface of a float glass ribbon. | |
| JPS5559729A (en) | Forming method of semiconductor surface insulating film | |
| GB1285167A (en) | Preparation of hydrosilanes | |
| GB1281298A (en) | IMPROVEMENTS IN OR RELATING TO THE PRODUCTION OF A PROTECTIVE LAYER OF SiO2 ON THE SURFACE OF SEMICONDUCTOR PLATES | |
| GB1393211A (en) | Manufacture of shaped hollow bodies of silicon or silicon carbide | |
| GB1251598A (en) | ||
| GB1347178A (en) | Production of semiconductor arrangements | |
| GB1160301A (en) | Method of Forming a Crystalline Semiconductor Layer on an Alumina Substrate | |
| GB1147412A (en) | Process of producing oxide films on substrates | |
| GB1369561A (en) | Method of densifying vapour deposited borosilicate glasses | |
| GB1384206A (en) | Method of forming a resistance layer in a semiconductor integrated circuit device | |
| EP0075902A3 (en) | Method of vapor deposition | |
| GB1273097A (en) | Improvements in or relating to the manufacture of hollow bodies of semiconductor material | |
| GB1377699A (en) | Method of making a semiconductor device and a semiconductor device when made thereby | |
| GB1268405A (en) | Improvements in or relating to the production of an insulating layer on the surface of a semiconductor crystal | |
| IE36562L (en) | Sheet glass manufacture | |
| FR2113688A5 (en) | Crystal pulling furnace - with two concentric communication crucibles contg melts | |
| GB1328301A (en) | Process for the preparation of dehydrogenation catalyst and the use thereof | |
| JPS54157779A (en) | Production of silicon single crystal | |
| GB1449789A (en) | Method of growing pyrolytic silicon dioxide layers | |
| GB1237952A (en) | ||
| GB1518564A (en) | Method for the low pressure pyrolytic deposition of silicon nitride | |
| GB1409340A (en) | Superconducting niobium-gallium alloy | |
| GB1153794A (en) | Improvements in and relating to the Deposition of Silicon Nitride Films |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |