Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
  • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
  • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
  • G11C27/04—Shift registers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D44/00—Charge transfer devices
  • H10D44/40—Charge-coupled devices [CCD]
  • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D44/00—Charge transfer devices
  • H10D44/40—Charge-coupled devices [CCD]
  • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
  • H10D44/472—Surface-channel CCD
  • H10D44/474—Two-phase CCD
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D44/00—Charge transfer devices
  • H10D44/40—Charge-coupled devices [CCD]
  • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
  • H10D44/472—Surface-channel CCD
  • H10D44/476—Three-phase CCD
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D44/00—Charge transfer devices
  • H10D44/40—Charge-coupled devices [CCD]
  • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
  • H10D44/472—Surface-channel CCD
  • H10D44/478—Four-phase CCD
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
  • H10D62/213—Channel regions of field-effect devices
  • H10D62/335—Channel regions of field-effect devices of charge-coupled devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D64/00—Electrodes of devices having potential barriers
  • H10D64/60—Electrodes characterised by their materials
  • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
  • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D64/00—Electrodes of devices having potential barriers
  • H10D64/60—Electrodes characterised by their materials
  • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
  • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/01—Manufacture or treatment
  • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices

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Family Applications (1)

Country Status (14)

Cited By (1)

Families Citing this family (5)

• 1971
  • 1971-06-02 CA CA114,670A patent/CA1075811A/en not_active Expired
  • 1971-09-29 IE IE1218/71A patent/IE35680B1/xx unknown
  • 1971-10-21 SE SE7113345A patent/SE379111B/xx unknown
  • 1971-10-25 BE BE774391A patent/BE774391A/xx not_active IP Right Cessation
  • 1971-10-26 GB GB4960371A patent/GB1344646A/en not_active Expired
  • 1971-10-28 NL NL7114859.A patent/NL163061C/xx not_active IP Right Cessation
  • 1971-10-28 ZA ZA717200A patent/ZA717200B/xx unknown
  • 1971-10-28 KR KR7101560A patent/KR780000481B1/ko active
  • 1971-10-28 DE DE2153675A patent/DE2153675C3/de not_active Expired
  • 1971-10-28 FR FR7138817A patent/FR2111924B1/fr not_active Expired
  • 1971-10-28 ES ES396891A patent/ES396891A1/es not_active Expired
  • 1971-10-28 CH CH1570071A patent/CH569342A5/xx not_active IP Right Cessation
  • 1971-10-28 IT IT53763/71A patent/IT939683B/it active
  • 1971-10-29 JP JP8568971A patent/JPS5310817B1/ja active Pending

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