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IE35680B1 - Improvements in or relating to information storage devices - Google Patents

Improvements in or relating to information storage devices

Info

Publication number
IE35680B1
IE35680B1 IE1218/71A IE121871A IE35680B1 IE 35680 B1 IE35680 B1 IE 35680B1 IE 1218/71 A IE1218/71 A IE 1218/71A IE 121871 A IE121871 A IE 121871A IE 35680 B1 IE35680 B1 IE 35680B1
Authority
IE
Ireland
Prior art keywords
pair
electrodes
electrode
phase
per bit
Prior art date
Application number
IE1218/71A
Other versions
IE35680L (en
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IE35680L publication Critical patent/IE35680L/en
Publication of IE35680B1 publication Critical patent/IE35680B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/474—Two-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/476—Three-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/478—Four-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/335—Channel regions of field-effect devices of charge-coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Semiconductor Memories (AREA)

Abstract

Smith-Strain 19-6 CHARGE COUPLED DEVICE of the disclosure A Charge Coupled Device (CCD) structure employing two levels of electrode metallization. The field plate electrodes are arranged in pairs with the second one of each pair partially overlapping and insulated from the first one of its pair and the first one of the next pair. The structure can be operated two-phase with four electrodes per bit and three-phase with three electrodes per bit by providing suitable amounts of electrode overlap and suitable drive circuitry. A particularly advantageous mode of two-phase operation with four electrodes per bit is enabled by providing asymmetrical overlapping of electrodes, the second electrode of each pair overlapping the first electrode of its pair more than the first electrode of the next pair. 8 electrodes per bit and three-phase with three electrodes [CA1075811A]
IE1218/71A 1970-10-29 1971-09-29 Improvements in or relating to information storage devices IE35680B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8502670A 1970-10-29 1970-10-29

Publications (2)

Publication Number Publication Date
IE35680L IE35680L (en) 1972-04-29
IE35680B1 true IE35680B1 (en) 1976-04-28

Family

ID=22188999

Family Applications (1)

Application Number Title Priority Date Filing Date
IE1218/71A IE35680B1 (en) 1970-10-29 1971-09-29 Improvements in or relating to information storage devices

Country Status (14)

Country Link
JP (1) JPS5310817B1 (en)
KR (1) KR780000481B1 (en)
BE (1) BE774391A (en)
CA (1) CA1075811A (en)
CH (1) CH569342A5 (en)
DE (1) DE2153675C3 (en)
ES (1) ES396891A1 (en)
FR (1) FR2111924B1 (en)
GB (1) GB1344646A (en)
IE (1) IE35680B1 (en)
IT (1) IT939683B (en)
NL (1) NL163061C (en)
SE (1) SE379111B (en)
ZA (1) ZA717200B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4646119A (en) * 1971-01-14 1987-02-24 Rca Corporation Charge coupled circuits
GB1444047A (en) * 1973-02-28 1976-07-28 Hitachi Ltd Charge transfer semiconductor devices and methods of fabricating such devices
NL7409793A (en) * 1973-08-01 1975-02-04 Trw Inc ASYMMETRIC LOAD TRANSFER DEVICE.
JPS58184760A (en) * 1982-04-22 1983-10-28 Sony Corp charge transfer device
NL8300366A (en) * 1983-02-01 1984-09-03 Philips Nv IMAGE RECORDING DEVICE.
DE3817153A1 (en) * 1988-05-19 1989-11-30 Messerschmitt Boelkow Blohm SEMICONDUCTOR COMPONENT

Also Published As

Publication number Publication date
IE35680L (en) 1972-04-29
ZA717200B (en) 1972-08-30
FR2111924B1 (en) 1976-03-26
NL163061C (en) 1980-07-15
DE2153675C3 (en) 1980-09-18
AU3398971A (en) 1973-04-05
SE379111B (en) 1975-09-22
BE774391A (en) 1972-02-14
FR2111924A1 (en) 1972-06-09
IT939683B (en) 1973-02-10
DE2153675B2 (en) 1976-08-12
KR780000481B1 (en) 1978-10-24
ES396891A1 (en) 1974-06-16
DE2153675A1 (en) 1972-05-18
NL7114859A (en) 1972-05-03
NL163061B (en) 1980-02-15
GB1344646A (en) 1974-01-23
JPS5310817B1 (en) 1978-04-17
CA1075811A (en) 1980-04-15
CH569342A5 (en) 1975-11-14

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