GB1251732A - - Google Patents
Info
- Publication number
- GB1251732A GB1251732A GB1251732DA GB1251732A GB 1251732 A GB1251732 A GB 1251732A GB 1251732D A GB1251732D A GB 1251732DA GB 1251732 A GB1251732 A GB 1251732A
- Authority
- GB
- United Kingdom
- Prior art keywords
- guard
- guard region
- transistor
- annular
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 abstract 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76689468A | 1968-10-11 | 1968-10-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1251732A true GB1251732A (fr) | 1971-10-27 |
Family
ID=25077853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1251732D Expired GB1251732A (fr) | 1968-10-11 | 1969-09-26 |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS4941957B1 (fr) |
| BE (1) | BE740085A (fr) |
| CH (1) | CH494474A (fr) |
| DE (1) | DE1948052C3 (fr) |
| FR (1) | FR2020370B1 (fr) |
| GB (1) | GB1251732A (fr) |
| NL (1) | NL164159C (fr) |
| SE (1) | SE359403B (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2240427A (en) * | 1990-01-25 | 1991-07-31 | Nissan Motor | Guard rings for semiconductor devices |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3440500A (en) * | 1966-09-26 | 1969-04-22 | Itt | High frequency field effect transistor |
| FR1538402A (fr) * | 1967-06-30 | 1968-09-06 | Radiotechnique Coprim Rtc | Procédé de fabrication de dispositifs semi-conducteurs intégrés |
-
1969
- 1969-09-02 FR FR6930696A patent/FR2020370B1/fr not_active Expired
- 1969-09-23 DE DE1948052A patent/DE1948052C3/de not_active Expired
- 1969-09-23 NL NL6914376.A patent/NL164159C/xx not_active IP Right Cessation
- 1969-09-26 GB GB1251732D patent/GB1251732A/en not_active Expired
- 1969-09-30 JP JP44077475A patent/JPS4941957B1/ja active Pending
- 1969-10-06 CH CH1498069A patent/CH494474A/de not_active IP Right Cessation
- 1969-10-07 SE SE13774/69A patent/SE359403B/xx unknown
- 1969-10-10 BE BE740085D patent/BE740085A/xx unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2240427A (en) * | 1990-01-25 | 1991-07-31 | Nissan Motor | Guard rings for semiconductor devices |
| US5184204A (en) * | 1990-01-25 | 1993-02-02 | Nissan Motor Co., Ltd. | Semiconductor device with high surge endurance |
| GB2240427B (en) * | 1990-01-25 | 1993-11-24 | Nissan Motor | Semiconductor device with high surge endurance |
Also Published As
| Publication number | Publication date |
|---|---|
| CH494474A (de) | 1970-07-31 |
| DE1948052A1 (de) | 1970-04-16 |
| NL164159B (nl) | 1980-06-16 |
| DE1948052B2 (de) | 1973-11-08 |
| FR2020370B1 (fr) | 1973-11-16 |
| NL164159C (nl) | 1980-11-17 |
| FR2020370A1 (fr) | 1970-07-10 |
| JPS4941957B1 (fr) | 1974-11-12 |
| NL6914376A (fr) | 1970-04-14 |
| BE740085A (fr) | 1970-03-16 |
| DE1948052C3 (de) | 1975-03-06 |
| SE359403B (fr) | 1973-08-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |