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GB1238557A - - Google Patents

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Publication number
GB1238557A
GB1238557A GB1238557DA GB1238557A GB 1238557 A GB1238557 A GB 1238557A GB 1238557D A GB1238557D A GB 1238557DA GB 1238557 A GB1238557 A GB 1238557A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
aug
capacitively coupled
cross
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1238557A publication Critical patent/GB1238557A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/10Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00Bulk negative-resistance effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

1,238,557. Semi-conductor devices. NIPPON ELECTRIC CO. Ltd. 4 Aug., 1969 [2 Aug., 1968], No. 38972/69. Heading H1K. [Also in Division H3] A bulk negative resistance effect device for use in an amplifier circuit carries, along one side surface, a conductive layer 15 capacitively coupled to the semi-conductor body 11 through a dielectric layer 14, and the body 11 includes a cross-sectional region, close to but spaced from the cathode electrode 12, which has a greater electrical resistance than corresponding crosssectional regions elsewhere in the body 11. The greater resistance may be achievied by variation in the dopant concentration along the length of the semi-conductor body 11 or, as shown, by etching a groove partly across the body to restrict its cross-sectional area locally. In a modification signal input and output electrodes are additionally provided on the same surface as the capacitively coupled electrode 15 at opposite ends thereof respectively. These additional electrodes may be ohmic, rectifying or capacitive
GB1238557D 1968-08-02 1969-08-04 Expired GB1238557A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5566668 1968-08-02

Publications (1)

Publication Number Publication Date
GB1238557A true GB1238557A (en) 1971-07-07

Family

ID=13005164

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1238557D Expired GB1238557A (en) 1968-08-02 1969-08-04

Country Status (1)

Country Link
GB (1) GB1238557A (en)

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees