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GB1200327A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1200327A
GB1200327A GB38473/67A GB3847367A GB1200327A GB 1200327 A GB1200327 A GB 1200327A GB 38473/67 A GB38473/67 A GB 38473/67A GB 3847367 A GB3847367 A GB 3847367A GB 1200327 A GB1200327 A GB 1200327A
Authority
GB
United Kingdom
Prior art keywords
insulating layer
region
edge
electrode layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB38473/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of GB1200327A publication Critical patent/GB1200327A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

1,200,327. Semi-conductor devices. MATSUSHITA ELECTRONICS CORP. 21 Aug., 1967 [19 Sept., 1966], No. 38473/67. Heading H1K. A semi-conductor device of the type comprising a substrate of one conductivity type having a region of opposite type at one surface thereof, an insulating layer on the surface, and an electrode layer deposited on the insulating layer and connected to the region, is characterized in that the insulating layer extends beyond the edge of the electrode layer for a distance not exceeding 300 times the thickness of the insulating layer. This reduces the capacity between the electrode layer and the substrate by limiting the extent of the inversion layer which forms beneath the insulating layer. Preferably the edge of the electrode layer lies above the edge of the region, and in an example the insulating layer has a thickness of 0À12Á and an overlap of 9Á.
GB38473/67A 1966-09-19 1967-08-21 Semiconductor device Expired GB1200327A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6242766 1966-09-19

Publications (1)

Publication Number Publication Date
GB1200327A true GB1200327A (en) 1970-07-29

Family

ID=13199836

Family Applications (1)

Application Number Title Priority Date Filing Date
GB38473/67A Expired GB1200327A (en) 1966-09-19 1967-08-21 Semiconductor device

Country Status (4)

Country Link
BE (1) BE703993A (en)
DE (1) DE1614187B1 (en)
GB (1) GB1200327A (en)
NL (1) NL6712516A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999021230A1 (en) * 1997-10-22 1999-04-29 Siemens Aktiengesellschaft Field effect semiconductor component

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
FR1400150A (en) * 1963-07-08 1965-05-21 Rca Corp Advanced semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999021230A1 (en) * 1997-10-22 1999-04-29 Siemens Aktiengesellschaft Field effect semiconductor component

Also Published As

Publication number Publication date
BE703993A (en) 1968-02-01
NL6712516A (en) 1968-03-20
DE1614187B1 (en) 1971-05-27

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees